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Features
High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter
Outline
TO-3PFM
D G
2SK2225
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25 C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Unit V V A A A W C C
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
2SK2225
Power vs. Temperature Derating 80 Pch (W) I D (A) 10 3 1 0.3 0.1 0.03 Ta = 25 C 0 50 100 Case Temperature 150 Tc (C) 200 0.01 10 30 100 300 1000 3000 10000 Drain to Source Voltage V DS (V)
C D
60
1
10 m s
s
s
m
(1
Channel Dissipation
Drain Current
pe
40
sh
20
tio ra n c (T =
ot
25 ) C
Drain Current
I D (A)
V DS = 25 V Pulse Test
Drain Current
0.8 Tc = 75 C 25 C 25 C
5V VGS = 4 V
0.4
80 100 V DS (V)
8 10 V GS (V)
2SK2225
Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 40 I D= 3 A 30 2A 1A 0.5 A 0 4 8 12 Gate to Source Voltage 16 V GS (V) 20 Drain to Source On State Resistance R DS(on) ( ) Drain to Source Saturation Voltage V DS(on) (V) 50 Static Drain to Source State Resistance vs. Drain Current 50 20 10 5
VGS = 10 V 15 V
20
10
0.2
2 5 I D (A)
10
16
12
0.5 A, 1 A
4 0 40
0.1
0.2
0.5
2SK2225
Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage
10000
5000
Capacitance C (pF)
VGS = 0 f = 1 MHz
1000
Ciss
200 100 50
100
Coss Crss
10
10
20
30
40
50
Switching Characteristics 20
1000 500
V DS (V)
800
16 VGS 12
t d(off)
200 100
V GS = 10 V PW = 2 s duty < 1 %
600
tf
50
400
tr t d(on)
200
I D = 2.5 A
20 10
0 100
0.05 0.1
1 2 I D (A)
2SK2225
Reverse Drain Current vs. Source to Drain Voltage 5 Reverse Drain Current I DR (A) Pulse Test 4
10 V, 15 V V GS = 0, 5 V
0.4
0.8
1.2
1.6
2.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C
D=1 0.5
0.3
0.2
0.1
0.05
0.1
0.03
0.02 0.01
1s t ho
D=
PW T
PW T
pu
lse
0.01 10
100
1m
10 m Pulse Width
100 m PW (S)
10
2SK2225
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Waveform
90%
2SK2225
Package Dimensions
As of January, 2001
Unit: mm
5.0 0.3
5.5 0.3
2.0 0.3
2.7 0.3
+ 0.2 0.1
21.0 0.5
5.45 0.5
TO-3PFM 5.2 g
2SK2225
2SK2225
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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