BAV19 / BAV20 / BAV21

BAV19 / 20 / 21

DO-35
Color Band Denotes Cathode

Small Signal Diode

Absolute Maximum Ratings*
Symbol
VRRM IF(AV) IFSM
TA = 25C unless otherwise noted

Parameter
Maximum Repetitive Reverse Voltage BAV19 BAV20 BAV21

Value
120 200 250 200 1.0 4.0 -65 to +200 175

Units
V V V mA A A C C

Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature

Tstg TJ

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA Power Dissipation Thermal Resistance, Junction to Ambient
TA = 25C unless otherwise noted

Parameter

Value
500 300

Units
mW C/W

Electrical Characteristics
Symbol
VR

Parameter
Breakdown Voltage BAV19 BAV20 BAV21

Test Conditions
IR = 100 A IR = 100 A IR = 100 A IF = 100 mA IF = 200 mA VR = 100 V VR = 100 V, TA = 150C VR = 150 V VR = 150 V, TA = 150C VR = 200 V VR = 200 V, TA = 150C VR = 0, f = 1.0 MHz IF = IR = 30 mA, IRR = 3.0 mA, RL = 100

Min
120 200 250

Max

Units
V V V V V nA A nA A nA A pF ns

VF IR

Forward Voltage Reverse Current BAV19 BAV20 BAV21

CT trr

Total Capacitance Reverse Recovery Time

1.0 1.25 100 100 100 100 100 100 5.0 50

2001 Fairchild Semiconductor Corporation

BAV19/20/21, Rev. C

BAV19 / BAV20 / BAV21

Small Signal Diode

(continued)

Typical Characteristics

325

50

Ta=25 C

Ta= 25 C

Reverse Current, I R [nA]

Reverse Voltage, V [V] R

40

30

300

20

10

275 3 5 10 20 30 50 100

55

R everse C urrent, I R [uA]

R everse Voltage, V R [V]

GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature

100

Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100uA

100

Figure 2. Reverse Current vs Reverse Voltage IR - 55 to 205 V

Ta= 25 C
450

Ta= 25 C
90 80 70 60 50 40 30 20

Forward Voltage, V R [mV]

180 200 220 240 255

Reverse Current, I R [nA]

400

350

300

250

Reverse Voltage, V R [V]

10

20

30

50

100

GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature

Forward Current, IF [uA]

Figure 3. Reverse Current vs Reverse Roltage IR - 180 to 225 V

Figure 4. Forward Voltage vs Forward Current VF - 1.0 to 100uA

Ta= 25 C
700

1.4 1.3

Ta= 25 C

Forward Voltage, V F [mV]

650

Forward Voltage, VF [mV]

1.2 1.1 1.0 0.9 0.8 0.7

600

550

500

450 0.1 0.2 0.3 0.5 1 2 3 5 10

10

20

30

50

100

200

300

500

800

Forward Current, I F [mA]

Forward Current, IF [mA]

Figure 5. Forward Voltage vs Forward Current VF - 0.1 to 10mA

Figure 6. Forward Voltage vs Forward Current VF - 10 to 800mA

BAV19/20/21, Rev. C

BAV19 / BAV20 / BAV21

Small Signal Diode

(continued)

Typical Characteristics

(continued)

900 800

1.3

Ta= 25 C
Ta= -40C

Forward Voltage, V [mV] F

Total Capacitance [pF]

1 3 10

1.2

700 600 500 400

Ta= 25 C

1.1

1.0

Ta= +80 C
300 200 100 0.001

0.9

0.003

0.01

0.03

0.1

0.3

0.8 0 2 4 6 8 10 12 14

F orw ard C urrent, I F [m A ]

Reverse Voltage [V]

Figure 7. Forward Voltage vs Ambient Temperature VF - 1.0 uA - 10 mA (-40 to +80 Deg C)

50 400

Figure 8. Total Capacitance

Reverse Recovery Time [nS]

300

Current [mA]

40

200

IF

(A V

-A V

ER

AG

30

ER E

CT

100

IF I E

DC U

RR

EN

I F = I R = 30 mA Rloop = 100 Ohms

20 1.0 1.5 2.0 2.5 3.0 0 0 50 100

TmA

150

Reverse Recovery Current, I rr [mA]

Ambient Temperature, T A [ C]

Figure 9. Reverse Recovery Time vs Reverse Recovery Current

Figure 10. Average Rectified Current (IF(AV)) versus Ambient Temperature (TA)

500

Power Dissipation, P [mW] D

400

DO-35 Pkg
300

SOT-23 Pkg
200

100

0 0 50 100 150 200

Average Temperature, IO [ C]

Figure 11. Power Derating Curve

BAV19/20/21, Rev. C

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Rev. H4