2SK3878

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOSIV)

2SK3878
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Absolute Maximum Ratings (Ta = 25C)

Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 30 9 27 150 778 9 15 150 55 to 150 Unit V V V A W mJ A mJ C C 1. GATE 2. DRAIN (HEATSINK) 3. SOURCE

Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

JEDEC JEITA TOSHIBA

SC-65 216C1B

Weight: 4.6 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit C/W C/W 1

Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: VDD = 90 V, Tch = 25C, L = 17.6 mH, RG = 25 , IAR = 9 A Note 3: Repetitive rating: pulse width limited by max junction temperature This transistor is an electrostatic-sensitive device. Handle with care.

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2SK3878
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf ID = 4 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 30 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 15 V, ID = 4 A Min 30 900 2.0 3.5 Typ. 1.0 7.0 2200 45 190 25 Max 10 100 4.0 1.3 pF Unit A V A V V S

10 V VGS 0V 4.7

ns

VOUT

Turn-on time Switching time Fall time

RL = 100

65

VDD 400 V

20

nC

Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (Miller) charge

toff

Duty 1%, tw = 10 s

120

Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 9 A

60 34 26

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 9 A, VGS = 0 V IDR = 9 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1.4 16 Max 9 27 1.7 Unit A A V s C

Marking
Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code) Lot No. Note 4

TOSHIBA

K3878

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

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ID VDS
10 COMMON SOURCE Tc = 25C PULSE TEST 10 6 5.5 6 5.25 20 COMMON SOURCE Tc = 25C PULSE TEST

ID VDS

15

DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

16 10 12 15

5.5

4.75 2 VGS = 4.5 V

5 VGS = 4.5 V

10

12

16

20

DRAINSOURCE VOLTAGE VDS (V)

DRAINSOURCE VOLTAGE VDS (V)

ID VGS
20

VDS VGS
20

DRAIN CURRENT ID (A)

16

DRAINSOURCE VOLTAGE VDS (V)

COMMON SOURCE VDS = 20 V PULSE TEST

16

COMMON SOURCE Tc = 25C PULSE TEST

12

25

12 ID = 9 A 8 4.5 4 2.3 0

8 100 4 Tc = 55C

10

12

16

20

GATESOURCE VOLTAGE VGS

(V)

GATESOURCE VOLTAGE VGS

(V)

Yfs ID
100

RDS (ON) ID
10 COMMON SOURCE

FORWARD TRANSFER ADMITTANCE Yfs (S)

DRAINSOURCE ON-RESISTANCE RDS (ON) ()

COMMON SOURCE VDS = 20 V PULSE TEST

Tc = 25C PULSE TEST

VGS = 10 V 1

10 Tc = 55C 25 100

1 0.1

10

100

0.1

10

100

DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

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RDS (ON) Tc
5

IDR VDS
100

DRAIN REVERSE CURRENT IDR (A)

DRAINSOURCE ON-RESISTANCE RDS (ON) ()

COMMON SOURCE VGS = 10 V PULSE TEST

COMMON SOURCE Tc = 25C PULSE TEST

10

3 ID = 9 A 2 4.5 2.3

10 5 3 1 VGS = 0 V 0.8 1.2 1.6

0 80

40

40

80

120

160

0.1

0.4

CASE TEMPERATURE

Tc (C)

DRAINSOURCE VOLTAGE VDS (V)

C VDS
10000 Ciss 5

Vth Tc
Vth (V) GATE THRESHOLD VOLTAGE

(pF)

1000

CAPACITANCE C

Coss 100 Crss 10

COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 10 100

1 0.1

0 80

COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST 40 0 40 80 120 160

DRAINSOURCE VOLTAGE VDS (V)

CASE TEMPERATURE

Tc (C)

PD Tc
200 500

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

DRAINSOURCE VOLTAGE VDS (V)
COMMON SOURCE ID = 9 A Tc = 25C PULSE TEST 20

PD (W)

400

16

DRAIN POWER DISSIPATION

120

300 200 200 VGS 100

100 VDD = 400 V

12

80

40

0 0

40

80

120

160

200

0 0

20

40

60

80

0 100

CASE TEMPERATURE

Tc

(C)

TOTAL GATE CHARGE Qg (nC)

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GATESOURCE VOLTAGE VGS

160

VDS

(V)

2SK3878

rth tw
10

NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)

Duty = 0.5 0.2

0.1

0.1 0.05 0.02 0.01 SINGLE PULSE PDM t T Duty = t/T Rth (ch-c) = 0.833C/W

0.01

0.001 10

100

1m

10 m

100 m

10

PULSE WIDTH tw

(s)

SAFE OPERATING AREA

100 1000

EAS Tch
AVALANCHE ENERGY EAS (mJ)

ID max (PULSE) *

DRAIN CURRENT ID (A)

10

ID max (CONTINUOUS) 1 ms *

100 s *

800

600

DC OPERATION Tc = 25C

400

0.1

200

SINGLE NONPETITIVE PULSE Tc = 25C VDSS max 100 1000 10000

Curves must be derated linearly with increase in temperature. 0.01 1 10

0 25

50

75

100

125

150

CHANNEL TEMPERATURE (INITIAL)

Tch (C)

DRAINSOURCE VOLTAGE VDS (V)

15 V 15 V

BVDSS IAR VDD VDS

TEST CIRCUIT RG = 25 VDD = 90 V, L = 17.6 mH

WAVEFORM

AS =

1 B VDSS L I2 B 2 V VDSS DD

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RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively TOSHIBA), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively Product) without notice. This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBAs written permission, reproduction is permissible only if reproduction is without alteration/omission. Though TOSHIBA works continually to improve Products quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS PRODUCT DESIGN OR APPLICATIONS. Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (Unintended Use). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.

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