PD - 94301A

SMPS MOSFET

IRFP90N20D
HEXFET Power MOSFET

Applications High frequency DC-DC converters

VDSS
200V

RDS(on) max
0.023

ID
94A

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current

TO-247AC

Absolute Maximum Ratings

Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt S Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw

Max.
94 66 380 580 3.8 30 6.7 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)

Units
A W W/C V V/ns C

Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

Typ.
0.24

Max.
0.26 40

Units
C/W

Notes Qthrough

are on page 8

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1
09/27/01

IRFP90N20D
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 200 V VGS = 0V, ID = 250A 0.24 V/C Reference to 25C, ID = 1mA 0.023 VGS = 10V, ID = 56AT 3.0 5.0 V VDS = V GS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V

Dynamic @ TJ = 25C (unless otherwise specified)

gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 39 Typ. 180 45 87 23 160 43 79 6040 1070 170 8350 420 870 Max. Units Conditions S VDS = 50V, ID = 56A 270 I D = 56A 67 nC VDS = 160V 130 VGS = 10V, T VDD = 100V ID = 56A ns RG = 1.2 VGS = 10VT VGS = 0V VDS = 25V pF = 1.0MHz VGS = 0V, V DS = 1.0V, = 1.0MHz VGS = 0V, VDS = 160V, = 1.0MHz VGS = 0V, VDS = 0V to 160V U

Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche EnergyR Avalanche CurrentQ Repetitive Avalanche EnergyQ

Typ.

Max.
1010 56 58

Units
mJ A mJ

Diode Characteristics
IS
ISM

VSD trr Qrr ton

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Q Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Min. Typ. Max. Units

Conditions D MOSFET symbol 94 showing the A G integral reverse 380 S p-n junction diode. 1.5 V TJ = 25C, IS = 56A, VGS = 0VT 230 340 ns TJ = 25C, IF = 56A 1.9 2.8 C di/dt = 100A/s T Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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IRFP90N20D
1000
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP

1000
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP

100

ID , Drain-to-Source Current (A)

ID , Drain-to-Source Current (A)

100

10

5.0V

5.0V
10

0.1

20s PULSE WIDTH Tj = 25C

0.01 0.1 1 10 100 1 0.1 1

20s PULSE WIDTH Tj = 175C

10 100

VDS, Drain-to-Source Voltage (V)

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000.00

3.5

I D = 94A 

ID , Drain-to-Source Current ( )

3.0

T J = 175C
2.5

R DS(on) , Drain-to-Source On Resistance

100.00

(Normalized)

2.0

10.00

T J = 25C

1.5

1.0

1.00 5.0 7.0 9.0

VDS = 15V 20s PULSE WIDTH

11.0 13.0 15.0

0.5

0.0 -60 -40 -20 0 20 40 60 80

V GS = 10V 
100 120 140 160 180

VGS, Gate-to-Source Voltage (V)

TJ, Junction Temperature

( C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

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IRFP90N20D
1000000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = C ds + Cgd
VGS, Gate-to-Source Voltage (V)
12

I D = 56A 

100000

10


V DS = 160V V DS = 100V V DS = 40V

C, Capacitance(pF)

10000

Ciss Coss Crss

1000

100

10 1 10 100 1000

0 0 40 80 120 160 200

VDS, Drain-to-Source Voltage (V)

QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

1000.00

10000 OPERATION IN THIS AREA LIMITED BY R DS(on)

100.00

T J = 175C

10.00

T J = 25C

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

1000

100 100sec 10 1msec

1.00 VGS = 0V 0.10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VSD , Source-toDrain Voltage (V)

Tc = 25C Tj = 175C Single Pulse 1 10 100

10msec

0.1 1000 VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

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IRFP90N20D
100

 LIMITED BY PACKAGE
VGS
80

VDS

RD

D.U.T.
+

RG

-VDD

I D, Drain Current (A)

60

10V
Pulse Width 1 s Duty Factor 0.1 %

40

Fig 10a. Switching Time Test Circuit

20

VDS 90%

0 25 50 75 100 125 150 175

TC , Case Temperature

( C)

10% VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 10b. Switching Time Waveforms

1

(Z thJC)

D = 0.50 0.1 0.20

Thermal Response

0.10 0.05 0.01 0.02 0.01


SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T
J

0.001 0.00001


t1/ t 2 = P DM x Z thJC 0.1 +TC 0.0001 0.001 0.01 1


P DM t1 t2

t 1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP90N20D
1 5V 2100

VDS

D R IV E R

1680

RG
20V tp

D .U .T
IA S

+ V - DD

EAS , Single Pulse Avalanche Energy (mJ)


ID TOP 23A 40A 56A BOTTOM

1260

0 .0 1

840

Fig 12a. Unclamped Inductive Test Circuit

420

V (B R )D SS tp

0 25 50 75 100 125 150 175

Starting T , Junction Temperature J

( C)

IAS

Fig 12c. Maximum Avalanche Energy vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator Same Type as D.U.T.

QG

50K 12V .2F .3F

10 V
QGS VG QGD

D.U.T. VGS
3mA

+ V - DS

Charge

IG

ID

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

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IRFP90N20D
Peak Diode Recovery dv/dt Test Circuit
D.U.T

S
+

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

R
-

Q
RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ VDD

Driver Gate Drive P.W. Period D=

P.W. Period VGS=10V

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

VDD

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET Power MOSFETs

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IRFP90N20D
TO - 247 Package Outline
Dimensions are shown in millimeters (inches)
-D D B M 5.3 0 (.20 9) 4.7 0 (.18 5) 2 .50 (.089) 1 .50 (.059) 4

15.90 (.6 26) 15.30 (.6 02) -B -

3.65 (.143 ) 3.55 (.140 ) 0.25 (.01 0) M -A5.50 (.21 7)

2 0.30 (.80 0) 1 9.70 (.77 5) 1 2 3

2X

5.50 (.2 17) 4.50 (.1 77)

NOTES: 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7 -A C .

-C 1 4.80 (.583 ) 1 4.20 (.559 ) 4 .30 (.170 ) 3 .70 (.145 )

2 .40 (.094) 2 .00 (.079) 2X 5.45 (.21 5) 2X

1 .40 (.056 ) 3X 1 .00 (.039 ) 0 .25 (.010 ) M 3.4 0 (.1 33) 3.0 0 (.1 18) C A S

0 .80 (.031) 3X 0 .40 (.016) 2.60 (.10 2) 2.20 (.08 7)

L E A D A S S IG N M E N T S 1 2 3 4 GATE D R A IN SOURCE D R A IN

Notes:

Q Repetitive rating; pulse width limited by

max. junction temperature.

T Pulse width 300s; duty cycle 2%. U Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 90A.

R Starting TJ = 25C, L = 0.64mH

R G = 25, IAS = 56A. TJ 175C

S ISD 56A, di/dt 470A/s, VDD V(BR)DSS,

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/01

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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/