FDS4488

December 2001

FDS4488
30V N-Channel PowerTrench MOSFET
General Description
This N -Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low inline power loss and fast switching are required.

Features
7.9 A, 30 V. RDS(ON) = 22 m @ V GS = 10 V RDS(ON) = 30 m @ V GS = 4.5 V

Low gate charge (9.5 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability

Applications
DC/DC converter Load switch Motor drives

D D SO-8

DD

DD D D

5 6 7

4 3 2 1

Pin 1 SO-8

G G S S S S S S
TA=25oC unless otherwise noted

Absolute Maximum Ratings

Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
30 25
(Note 1a)

Units
V V A W

7.9 40 2.5 1.2 1.0 55 to +175

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ , TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics
R JA R J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

50 25

C/W

Package Marking and Ordering Information

Device Marking FDS4488 Device FDS4488 Reel Size 13 Tape width 12mm Quantity 2500 units

2001 Fairchild Semiconductor Corporation

FDS4488 Rev B (W)

FDS4488

Electrical Characteristics
Symbol
BV DSS BV DSS TJ IDSS IGSSF IGSSR

TA = 25C unless otherwise noted

Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)

Test Conditions
V GS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C V DS = 24 V, V GS = 25 V, V GS = 25 V, V GS = 0 V V DS = 0 V V DS = 0 V

Min
30

Typ

Max Units
V mV/C 1 100 100 A nA nA

Off Characteristics
21

On Characteristics
V GS(th) V GS(th) TJ RDS(on)

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance

V DS = V GS , ID = 250 A ID = 250 A, Referenced to 25C V GS = 10 V, ID = 7.9 A V GS = 4.5 V, ID = 6.8 A V GS = 10 V, ID = 7.9 A, TJ =125C V GS = 10 V, V DS = 10 V, V DS = 5 V ID = 7.9 A

1.8 6 15 21 22

V mV/C m

22 30 35

ID(on) gFS

20 24

A S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)

V DS = 15 V, f = 1.0 MHz

V GS = 0 V,

927 241 97

pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge

V DD = 15 V, V GS = 10 V,

ID = 1 A, RGEN = 6

7.4 7.5 25 5

15 15 40 10 13

ns ns ns ns nC nC nC

V DS = 15 V, V GS = 5 V

ID = 7.9 A,

9.5 3.3 3.1

DrainSource Diode Characteristics and Maximum Ratings

IS V SD trr Qrr
Notes : 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward V GS = 0 V, IS = 2.1 A Voltage Diode Reverse Recovery Time IF = 7.9 A, diF/dt = 100 A/s Diode Reverse Recovery Charge

2.1
(Note 2)

A V nS nC

0.7 22 20

1.2

a) 50C/W when mounted on a 1in2 pad of 2 oz copper

b) 105C/W when mounted on a .04 in2 pad of 2 oz copper

c) 125C/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
FDS4488 Rev B (W)

FDS4488

Typical Characteristics

40 V GS = 10V 6.0V R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 4.0V

2.6 2.4 V GS=3.5V 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 0.5 1 1.5 2 2.5 3 0 10 20 ID, DRAIN CURRENT (A) 30 40 V DS, DRAIN-SOURCE VOLTAGE (V) 4.0V 4.5V 5.0V 6.0V 10V

ID, DRAIN CURRENT (A)

30

20 3.5V

10 3.0V 0

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

0.08 RDS(ON) , ON-RESISTANCE (OHM)

1.8 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 7.9A V GS = 10V

1.6 1.4 1.2

ID = 4A 0.06

0.04

T A = 125o C

1 0.8

0.02 TA = 25 oC

0.6 -50 -25 0 25 50 75 100 125 150 175 TJ , JUNCTION TEMPERATURE (oC)

0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Temperature.

25 IS, REVERSE DRAIN CURRENT (A) V DS = 5V 20 ID, DRAIN CURRENT (A) 125o C 15 TA = -55o C 25o C

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

100 10 1 25o C 0.1 -55o C 0.01 0.001 0.0001 V GS = 0V T A = 125o C

10

0 1.5 2 2.5 3 3.5 4

0.2

0.4

0.6

0.8

1.2

V GS, GATE TO SOURCE VOLTAGE (V)

V SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDS4488 Rev B (W)

FDS4488

Typical Characteristics

10 V GS, GATE-SOURCE VOLTAGE (V) ID = 7.9A 8 CAPACITANCE (pF) 20V 6 V DS =10V 15V

1600 f = 1MHz V GS = 0 V 1200 CISS 800

COSS 400

2 CRSS 0 5 10 15 20 25 30

0 0 4 8 12 16 20 Q g, GATE CHARGE (nC)

VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

100 P(pk), PEAK TRANSIENT POWER (W) R DS(ON) LIMIT ID, DRAIN CURRENT (A) 10 100s 1ms 10ms 100ms 1 1s 10s DC V GS = 10V SINGLE PULSE RJA = 125o C/W TA = 25o C 0.01 0.1 1 10 100 VDS , DRAIN-SOURCE VOLTAGE (V) 50

Figure 8. Capacitance Characteristics.

40

SINGLE PULSE R JA = 125C/W TA = 25C

30

20

0.1

10

0 0.001

0.01

0.1

1 t 1, TIME (sec)

10

100

1000

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power Dissipation.

1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2

R JA(t) = r(t) * R JA R JA = 125 C/W P(pk) t1 t2 T J - TA = P * RJA(t) Duty Cycle, D = t 1 / t2

0.1

0.1 0.05 0.02 0.01

0.01
SINGLE PULSE

0.001 0.0001

0.001

0.01

0.1
t 1, TIME (sec)

10

100

1000

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS4488 Rev B (W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series
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FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE

OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER

SMART START STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFET

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STAR*POWER is used under license

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Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4