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1N4001 thru 1N4007

Vishay Semiconductors

General Purpose Plastic Rectifier

Major Ratings and Characteristics


IF(AV) VRRM IFSM VF IR Tj max. 1.0 A 50 V to 1000 V 30 A 1.1 V 5.0 A 150 C

DO-204AL (DO-41)

Features
Low forward voltage drop Low leakage current High forward surge capability

Mechanical Data
Case: DO-204AL, molded plastic body Epoxy meets UL-94V-0 Flammability rating Terminals: Matte tin plated (E3 Suffix) leads, solderable per J-STD-002B and MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end

Typical Applications
For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes application. (Note: These devices are not Q101 qualified. Therefore, the devices specified in this datasheet have not been designed for use in automotive or Hi-Rel applications.)

Maximum Ratings
(TA = 25 C unless otherwise noted) Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 75 C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Maximum full load reverse current, full cycle average 0.375" (9.5 mm) lead length TL = 75 C Operating junction and storage temperature range Symbol VRRM VRMS VDC IF(AV) IFSM IR(AV) TJ, TSTG 1N 1N 1N 1N 1N 1N 1N 4001 4002 4003 4004 4005 4006 4007 50 35 50 100 70 100 200 140 200 400 280 400 1.0 30 30 - 55 to + 150 600 420 600 800 560 800 1000 700 1000 Unit V V V A A A C

Document Number 88503 28-Apr-05

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1N4001 thru 1N4007


Vishay Semiconductors Electrical Characteristics
(TA = 25 C unless otherwise noted) Parameter Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage Typical junction capacitance at 4.0 V, 1 MHz at 1.0 A TA = 25 C TA = 125 C Test condition Symbol VF IR CJ 1N 1N 1N 1N 1N 1N 1N 4001 4002 4003 4004 4005 4006 4007 1.1 5.0 50 15 Unit V A pF

Thermal Characteristics
(TA = 25 C unless otherwise noted) Parameter Typical thermal resistance(1) Notes: (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted Symbol RJA RJL 1N 1N 1N 1N 1N 1N 1N 4001 4002 4003 4004 4005 4006 4007 50 25 Unit C/W

Ratings and Characteristics Curves


(TA = 25 C unless otherwise noted)
1.0 30 TA = 75 C 8.3 ms Single Half Sine-Wave 25

Average Forward Rectified Current (A)

0.8 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pads 0.6

Peak Forward Surge Current (A)


175

60 H Z Resistive or Inductive Load

20

0.4

15

0.2 0.375" (9.5 mm) Lead Length 0 0 25 50 75 100 125 150

10

5.0 1 10 100

Junction Temperature (C)

Number of Cycles at 60 H Z

Figure 1. Forward Current Derating Curve

Figure 2. Maximum Non-repetitive Peak Forward Surge Current

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Document Number 88503 28-Apr-05

1N4001 thru 1N4007


Vishay Semiconductors
20

100

Instantaneous Forward Current (A)

10

TJ = 25 C f = 1.0 MHZ Vsig = 50 m Vp-p

TJ = 25 C Pulse Width = 300s 1 % Duty Cycle

Junction Capacitance (pF)


1.8

10

0.1

0.01 0.6

0.8

1.0

1.2

1.4

1.6

1 0.1

10

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Typical Junction Capacitance

1000 TJ = 150 C 100

100

Transient Thermal Impedance (C/W)

Instantaneous Reverse Current (A)

10

10

TJ = 100 C

1 TJ = 25 C

0.1

0.01 0 20 40 60 80 100

0.1 0.01

0.1

10

100

Percentage of Peak Reverse Voltage (%)

t -- Pulse Duration (sec)

Figure 4. Typical Reverse Characteristics

Figure 6. Typical Transient Thermal Impedance

Package outline dimensions in inches (millimeters)


DO-204AL (DO-41)

1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA.

0.205 (5.2) 0.160 (4.1)

1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA.

Document Number 88503 28-Apr-05

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