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DESCRIPTION
against low energy spikes (see ISO7637 transient
The VNQ810 is a quad HSD formed by compatibility table). Active current limitation
assembling two VND810 chips in the same SO-28 combined with thermal shutdown and automatic
package. The VND810 is a monolithic device restart protects the device against overload. The
made by using STMicroelectronics VIPower M0-3 device detects open load condition both in on and
Technology, intended for driving any kind of load off state . Output shorted to VCC is detected in the
with one side connected to ground. off state. Device automatically turns off in case of
Active VCC pin voltage clamp protects the device ground pin disconnection.
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
VCC DC Supply Voltage 41 V
- VCC Reverse DC Supply Voltage - 0.3 V
- Ignd DC Reverse Ground Pin Current - 200 mA
IOUT DC Output Current Internally Limited A
- IOUT Reverse DC Output Current -6 A
IIN DC Input Current +/- 10 mA
ISTAT DC Status Current +/- 10 mA
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT 4000 V
VESD - STATUS 4000 V
- OUTPUT 5000 V
- VCC 5000 V
Maximum Switching Energy
EMAX 23 mJ
(L=1.38mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=5A)
Ptot Power dissipation (per island) at Tlead=25°C 6.25 W
Tj Junction Operating Temperature Internally Limited °C
Tstg Storage Temperature - 55 to 150 °C
BLOCK DIAGRAM
VCC1,2
Vcc OVERVOLTAGE
CLAMP
UNDERVOLTAGE
GND1,2 CLAMP 1
OUTPUT1
INPUT1 DRIVER 1
CLAMP 2
STATUS1
CURRENT LIMITER 1
DRIVER 2
LOGIC
OUTPUT2
OVERTEMP. 1
OPENLOAD ON 1
CURRENT LIMITER 2
INPUT2
OPENLOAD OFF 2
OVERTEMP. 2
VCC3,4
Vcc OVERVOLTAGE
CLAMP
UNDERVOLTAGE
GND3,4 CLAMP 3
OUTPUT3
INPUT3 DRIVER 3
CLAMP 4
STATUS3
CURRENT LIMITER 3 DRIVER 4
LOGIC
OVERTEMP. 3 OUTPUT4
OPENLOAD ON 3
CURRENT LIMITER 4
INPUT4
OPENLOAD OFF 3 OPENLOAD ON 4
STATUS4
OPENLOAD OFF 4
OVERTEMP. 4
2/20
VNQ810
IS3,4 VCC1,2
VCC1,2 VCC3,4
VCC3,4
IIN1
INPUT1 IOUT1
VIN1 ISTAT1
STATUS1 OUTPUT1
VSTAT1 IIN2
IOUT2 VOUT1
INPUT2
VIN2 ISTAT2 OUTPUT2
STATUS2 VOUT2
VSTAT2 IIN3 IOUT3
INPUT3
VIN3 ISTAT3 OUTPUT3
STATUS3 VOUT3
IIN4 IOUT4
VSTAT3
INPUT4 OUTPUT4
VIN4 ISTAT4 VOUT4
STATUS4
VSTAT4
GND1,2 GND3,4
IGND1,2 IGND3,4
VCC1,2 1 28 VCC1,2
GND 1,2 OUTPUT1
INPUT1 OUTPUT1
STATUS1 OUTPUT1
STATUS2 OUTPUT2
INPUT2 OUTPUT2
VCC1,2 OUTPUT2
VCC3,4 OUTPUT3
STATUS3 OUTPUT4
STATUS4 OUTPUT4
INPUT4 OUTPUT4
VCC3,4 14 15 VCC3,4
3/20
VNQ810
(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick) connected to all VCC pins.
Horizontal mounting and no artificial air flow.
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C< Tj <150°C, unless otherwise specified)
POWER OUTPUTS (Per each channel)
Symbol Parameter Test Conditions Min Typ Max Unit
VCC (**) Operating Supply Voltage 5.5 13 36 V
VUSD (**) Undervoltage Shut-down 3 4 5.5 V
VOV (**) Overvoltage Shut-down 36 V
IOUT=1A; Tj=25°C 160 mΩ
RON On State Resistance
IOUT=1A; VCC>8V 320 mΩ
12 40 µA
Off State; VCC=13V; VIN=VOUT=0V
Off State; VCC=13V; VIN=VOUT=0V;
IS (**) Supply Current 12 25 µA
Tj =25°C
On State; VCC=13V; VIN=5V; IOUT=0A
5 7 mA
IL(off1) Off State Output Current VIN=VOUT=0V 0 50 µA
IL(off2) Off State Output Current VIN=0V; VOUT=3.5V -75 0 µA
IL(off3) Off State Output Current VIN=VOUT=0V; Vcc=13V; Tj =125°C 5 µA
IL(off4) Off State Output Current VIN=VOUT=0V; Vcc=13V; Tj =25°C 3 µA
4/20
1
VNQ810
OPEN LOAD STATUS TIMING (with external pull-up) OVER TEMP STATUS TIMING
VSTATn
VSTATn
tSDL tSDL
tDOL(off) tDOL(on)
5/20
2
VNQ810
VOUTn
90%
80%
dVOUT/dt(on) dVOUT/dt(off)
10%
t
VINn
td(on) td(off)
TRUTH TABLE
CONDITIONS INPUT OUTPUT STATUS
L L H
Normal Operation
H H H
L L H
Current Limitation H X (Tj < TTSD) H
H X (Tj > TTSD) L
L L H
Overtemperature
H L L
L L X
Undervoltage
H L X
L L H
Overvoltage
H L H
L H L
Output Voltage > VOL
H H H
L L H
Output Current < IOL
H H L
6/20
VNQ810
CLASS CONTENTS
C All functions of the device are performed as designed after exposure to disturbance.
E One or more functions of the device is not performed as designed after exposure and cannot be
returned to proper operation without replacing the device.
7/20
VNQ810
Figure 1: Waveforms
NORMAL OPERATION
INPUTn
OUTPUT VOLTAGEn
STATUSn
UNDERVOLTAGE
VCC VUSDhyst
VUSD
INPUTn
OUTPUT VOLTAGEn
STATUSn undefined
OVERVOLTAGE
VCC>VOV
VCC<VOV
VCC
INPUTn
OUTPUT VOLTAGEn
STATUSn
INPUTn
VOUT>VOL
OUTPUT VOLTAGEn
VOL
STATUSn
INPUTn
OUTPUT VOLTAGEn
STATUSn
OVERTEMPERATURE
Tj TTSD
TR
INPUTn
OUTPUT CURRENTn
STATUSn
8/20
1
VNQ810
APPLICATION SCHEMATIC
+5V +5V
+5V
VCC1,2 VCC3,4
Rprot
STATUS1
Rprot INPUT1
Dld
Rprot STATUS2 OUTPUT1
Rprot INPUT2
µC
Rprot OUTPUT2
STATUS3
Rprot OUTPUT3
INPUT3
Rprot
STATUS4
OUTPUT4
Rprot
INPUT4
GND1,2 GND3,4
RGND
+5V +5V VGND DGND
Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.
PD= (-VCC)2/RGND
GND PROTECTION NETWORK AGAINST
This resistor can be shared amongst several different
REVERSE BATTERY HSD. Please note that the value of this resistor should be
Solution 1: Resistor in the ground line (RGND only). This calculated with formula (1) where IS(on)max becomes the
can be used with any type of load. sum of the maximum on-state currents of the different
The following is an indication on how to dimension the devices.
RGND resistor. Please note that if the microprocessor ground is not
1) RGND ≤ 600mV / 2(IS(on)max). common with the device ground then the RGND will
produce a shift (IS(on)max * RGND) in the input thresholds
2) RGND ≥ (−VCC) / (-IGND) and the status output values. This shift will vary
where -IGND is the DC reverse ground pin current and can depending on many devices are ON in the case of several
be found in the absolute maximum rating section of the of high side drivers sharing the same RGND.
the device’s datasheet. If the calculated power dissipation leads to a large resistor
Power Dissipation in RGND (when VCC<0: during reverse or several devices have to share the same resistor then
battery situations) is: the ST suggest to utilize Solution 2.
9/20
VNQ810
10/20
VNQ810
Off state open load detection requires an external pull-up 2) no misdetection when load is disconnected: in this
resistor (RPU) connected between OUTPUT pin and a case the VOUT has to be higher than VOLmax; this
positive supply voltage (VPU) like the +5V line used to results in the following condition RPU<(VPU–VOLmax)/
supply the microprocessor. IL(off2).
The external resistor has to be selected according to the Because Is(OFF) may significantly increase if Vout is pulled
following requirements: high (up to several mA), the pull-up resistor RPU should
1) no false open load indication when load is connected: be connected to a supply that is switched OFF when the
in this case we have to avoid VOUT to be higher than module is in standby.
VOlmin; this results in the following condition The values of VOLmin, VOLmax and IL(off2) are available in
VOUT=(VPU/(RL+RPU))RL<VOlmin. the Electrical Characteristics section.
V batt. VPU
VCC
RPU
DRIVER
INPUT + IL(off2)
LOGIC
OUT
+
R
-
STATUS
VOL
RL
GROUND
11/20
VNQ810
1.44 4.5
Off state
Vin=3.25V
1.28 Vcc=36V 4
Vin=Vout=0V
1.12 3.5
0.96 3
0.8 2.5
0.64 2
0.48 1.5
0.32 1
0.16 0.5
0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (ºC) Tc (°C)
7.8
Iin=1mA
7.6 0.04
7.4 Vstat=5V
7.2 0.03
6.8 0.02
6.6
6.4 0.01
6.2
6 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
7.8
0.7
Istat=1mA
Istat=1.6mA 7.6
0.6
7.4
0.5
7.2
0.4 7
6.8
0.3
6.6
0.2
6.4
0.1
6.2
0 6
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
12/20
VNQ810
275
350
Iout=0.5A
250
Iout=0.5A
300
Vcc=8V; 13V & 36V 225
Tc= 150°C
250
200
200 175
150
150
Tc= 25°C
125
100
100
50
Tc= - 40°C
75
0 50
-50 -25 0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 40
Tc (°C) Vcc (V)
55
3.4
50
Vcc=13V
Vin=5V 3.2
45
3
40
35 2.8
30
2.6
25
2.4
20
2.2
15
10 2
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
1.4
2.4
1.3
2.2
1.2
2
1.1
1.8 1
0.9
1.6
0.8
1.4
0.7
1.2
0.6
1 0.5
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
13/20
VNQ810
48 4.5
Vin=0V
46 4
44 3.5
42 3
40 2.5
38 2
36 1.5
34 1
32 0.5
30 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
900 450
Rl=13Ohm
800 Vcc=13V 400
Rl=13Ohm
700 350
600 300
500 250
400 200
300 150
200 100
100 50
0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (ºC) Tc (°C)
ILIM Vs Tcase
Ilim (A)
10
9
Vcc=13V
8
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
14/20
VNQ810
ILMAX (A)
10
A
B
1
0.01 0.1 1 10 100
L(mH)
Conditions:
VCC=13.5V
Values are generated with RL=0Ω
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves B and C.
VIN, IL
Demagnetization Demagnetization Demagnetization
15/20
VNQ810
Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,
Cu thickness=35µm, Copper areas: 0.5cm2, 3cm2, 6cm2).
Rthj-amb Vs. PCB copper area in open box free air condition
RTHj_am b
(°C/W)
70
60
50
RthA
40
RthB
30
20 RthC
10
0 1 2 3 4 5 6 7
PCB Cu heatsink area (cm ^2)/island
16/20
VNQ810
Zth(°C/W)
100 0,5 cm ^2/island
3 cm ^2/island
6 cm ^2/island
10
One channel ON
1 Two channels
ON on same chip
0.1
0.01
0.0001 0.001 0.01 0.1 1 10 100 1000
time(s)
Tj_1 C1 C2 C3 C4 C5 C6
where δ = t p ⁄ T
Thermal Parameter
R1 R2 R3 R4 R5 R6
Pd1
Area/island (cm2) 0.5 6
Tj_2 C13 C14
R1=R7=R13=R15 (°C/W) 0.35
R13 R14 R2=R8=R14=R16 (°C/W) 1.8
Pd2
R17 R18
R3=R9 (°C/W) 4.5
R4=R10 (°C/W) 11
R5=R11 (°C/W) 15
Tj_3 C7 C8 C9 C10 C11 C12
R6=R12 (°C/W) 30 13
Pd3
17/20
VNQ810
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 2.65 0.104
a1 0.10 0.30 0.004 0.012
b 0.35 0.49 0.013 0.019
b1 0.23 0.32 0.009 0.012
C 0.50 0.020
c1 45 (typ.)
D 17.7 18.1 0.697 0.713
E 10.00 10.65 0.393 0.419
e 1.27 0.050
e3 16.51 0.650
F 7.40 7.60 0.291 0.299
L 0.40 1.27 0.016 0.050
S 8 (max.)
18/20
VNQ810
SO-28 TUBE SHIPMENT (no suffix)
Base Q.ty 28
Bulk Q.ty 700
Tube length (± 0.5) 532
C
B A 3.5
B 13.8
C (± 0.1) 0.6
REEL DIMENSIONS
Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13
F 20.2
G (+ 2 / -0) 16.4
N (min) 60
T (max) 22.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width W 16
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 12
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 7.5
Compartment Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2
Start
19/20
VNQ810
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
http://www.st.com
20/20