EEE EAIRCHILD Eee SEMICONDUCTOR® Data Sheet HGTG20N60A4, HGTP20N60A4 Pere 600V, SMPS Series N-Channel IGBTs ‘The HGTG20NG0A4 and HGTP20NGOA4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state ‘conduction oss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C. ‘and 150°C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low ‘conduction losses are essential. This device has been ‘optimized for high frequency switch mode power ‘supplies. Formerly Developmental Type TA49339, Ordering Information PARTNUMBER | PACKAGE ‘BRAND IHGTPZoNeORe jrozzans _[20NGuAS INGTG2ONGoAa Hro-2a7 [zoneaa NOTE: When ordering, use the entre par number. Symbol Features + >100kHz Operation at 390V, 20 + 200kHiz Operation at 390V, 12 + 800V Switching SOA Capability + Typical Fall Time. ‘55ns at Ty = 125°C + Low Conduction Loss + Temperature Compensating SABER™ Model ‘www.intersil.com + Related Literature + TB334 "Guidlines for Soldering Surface Mount Components to PC Boards Packaging JEDEC TO-220A8 ALTERNATE VERSION ruanae) ._€ = JEDEC STYLE TO-247 ‘Pua FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING US. PATENTS 4904073 4417.305 4,430,792 4,443,931 4500461 4.605.948 4,620,211 4,631,504 4082.195 40419 4604.a13 4.717.679 4903593 4.809.045 4,009,047 4,810,665 4996627 4.890149 4,908,127 4,908,609 4406176 4.816,143—4ga2.594 4,807,713, 4600751 4.690762 4an.te2 4.044007, 4.743.952 4.783090 4794492 4,001,986 402.176 4.897.008 4,860,000 4,088,767 499.740 4.963951 4.969.027HGTG20N60A4, HGTP20N60A4 Absolute Maximum Ratings T¢ = 25°C, Uniess Otherwise Specified HGTG2ONGOAS, HGTP20NGDA UNITS Collector to Emir Vattage 2Vces 600 v CCallctor Curent Continuous ALT= 25°C teas 0 A AtTg= 110° lero 40 A Collector Curent Pulsed (Note 1) low 280 A Gate o Emitter Voltage Continuous. Vees 20 v Gate to Emitter Voltage Pulsed oem 20 v Switching Safe Operating Area at T= 150°C (Figure 2) SOA 100A at 600V Power Dissipation Total at Te = 25°C Pp 290 w Power Dissipation Derating Te > 25°C 222 wee ‘Operating and Storage Junction Temperature Range Ty. Ts18 5510 150 °c, Maximum Lead Temperature for Soldering Leads at 0.063in (1mm) rom Case for 10s. 1 300 °c, Package Body for 10s, See Tech Brief 334 Teme 260 °c, CAUTION: Suesses above thoes Sted i “Absolute Maximum Ratings" may caute permanent damage 1 the device. Thi fa tes aly rating and operation of ‘device a tase or any cher candi above thas nda whe operational sectons of his speceatonf not mole. NOTE: 1. Pulse width limited by maximum junction temperature Electrical Specifications 1, °C, Unless Otherwise Specified PARAMETER ‘SYMBOL TEST CONDITIONS in| TYP_[ WAX | UNITS [Gatedor to Emiter Breakdown Vatage | BVces _[lo=2500A Voe=0V oo | 7 Vv Emiterte Coleco Breakdown Voliage | _BVecs [lo = T0mA Voe =0V [| Vv [Catecor to Emiter Leakage Gurrent Tees |[Voe= 6000 250_| WA 22 [Catecorio EmiterSatwraton Votage | Voewsany _|lo=20A 3 | a7 |v Voe= 18 s+ [Gate 1 Emitter Threshold Votage Vaan 250i, Vee = 00 a [ss | 70 |v [Gate to Enter Leakage Current Tees __[Voe= 2200 — [|= Swiching SOA S508 700 f x [Gate 1 Emit Plateau Voltage Veer — fs [- Vv [on-State Gate Charge yon) fle=20A v2 162 ae Vce= 300 Noe =20V w2_[ 210 | ac [Gurent Tarn Delay Time Twony __]|G8T and Diode at T= 25°C Ls | [Curent Rise Time 1 — Lf - * [Gurent Tar-OF Delay Time OFF — Ls [Curent Fall Time 4 — 2 | Fram-On Eneray (Note 3) Fou __|Test Get Figure 20) a Fram-On Eneray (Note 3) Fone —_ [es Fram Eneray (Note 2) Eore —_ [aeHGTG20N60A4, HGTP20N60A4 Electrical Specifications) 5°, Unless Otherwise Specified (Continued) PARAMETER ‘SYMBOL TEST CONDITIONS MIN _TYP_[ WAX | UNITS [Current Turn Delay Time Wow) _||GBT and Diode at Ty= 1250 pa | Ice = 208 [Current Rise Time i |Vee=380v ee a [Current Turn-Of Delay Time worry _|Voe= 154 wos | as | ne Re=30 [Currant Fall Time oP Soon = | |= FTare-On Enoray (Nate 3) Font Test Circuit Figure 20) 15 wD FTare-On Enaray (Note 3) ona so | oo [| w FTare-Off Energy (Nate 2) Fore ao | se | ws Thermal Resistance Junction To Cave Rue = [eas | Pow NOTES: 2, Tum-Off Energy Loss (Ege) is defined asthe intogral ofthe instantaneous power loss starting atthe traling edge of he input pulse and ending athe point whore the collector current equals zero (Igg = 0A) All devices were tested per JEDEC Standard No, 4-1 Method for Measurement (of Power Deviee Turn-Off Switching Lose. This test method produces the true total Turn-Off Energy Loss. 3, Values fr two Turn-On loss conditions are showin for the conveniance of the circuit designer. Egy i the turn-on lass ofthe IGBT only. Eons isthe turmon loss when a typical dade is usad inthe test circuit an the diode atthe same Ty asthe IGBT. The diode type is specified in Figure 20, Typical Performance Curves Uniess oirewse Species Tye 150°O, Rg ea ge = TOL 100, (Ge BC COLLECTOR CURRENT (a) Te, CASE TEMPERATURE (°) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE oe COLLECTOR TO EMITTER CURRENT {A} Veg, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA fans * 0.95 gory * ton) fuaxa (PoP) Con2 * Eore) Vou 3000, Rg #3 Ty = BS funy OPERATING FREQUENCY (ka) Isc. PEAK SHORT CIRCUIT CURRENT 1) {g¢. SHORT CIRCUIT WITHSTAND TNE ts) (OUTY FACTOR = 50%) se Ice: COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT Vee, GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME