12-Sep-13 ENEE419A Abshire Fall 2013 1

Ch 9: Analog Models
IV plots: current as a function of voltage
What does it mean for a device to be behaving like a resistor?
Resistance is reciprocal of slope of IV plot
Like a constant current source?
Same current no matter what voltage
Infinite resistance
Like a constant voltage source?
Same voltage no
matter what current
Zero resistance
12-Sep-13 ENEE419A Abshire Fall 2013 2
Diode-connected MOSFET
THN THN GS DS
V V V V 0
Diode-connected MOSFET: gate and drain terminals connected
Always saturated!



Current I depends on voltage across gate-drain and source
terminals
( ) ( ) | |
sat DS THN
V V V V
L
W K
I
,
2
1
2
+ =
12-Sep-13 ENEE419A Abshire Fall 2013 3
MOS Large Signal Model
MOS large signal model with Early effect
( )
2
1
2
1
GS
DS
D GS THN
A
A
o
D
D
DS
V
K W V
I V V
L V
V
r
I
I
V
| |
= +
|
\ .
= =

S
D G
( )
2
2
GS THN
K W
V V
L

o
r
V
A
depends on
technology and, for
a given process, is
proportional to
channel length L.
In saturation, the drain current is basically constant for a large
range of V
ds
which makes the NFET good as a voltage
controlled current source
12-Sep-13 ENEE419A Abshire Fall 2013 4
Small Signal MOS Models
At small signals MOS acts like voltage controlled current source:
signal v
gs
between gate and source produces drain current g
m
v
gs

12-Sep-13 ENEE419A Abshire Fall 2013 5
Small Signal MOS Models
Model includes transconductance and output resistance
(dependence of drain current on drain voltage)









Output resistance r
o
usually in range 10-1000k
A
o
D
V
r
I
=
( )
( )
2
2
2
1mA 20A/V 1 0.2mA/V
compare to BJ T 1mA 40mA/V
GS GS
D D
m GS THN D
GS GS THN
v V
D m
C m
i W W I
g K V V K I
v L L V V
W
I K g
L
I g
=

= = = =

= = = =
= =
12-Sep-13 ENEE419A Abshire Fall 2013 6
Small signal analysis
First, calculate the bias point using DC equations
Next, use the DC values to estimate small signal parameters
Next, create the small signal equivalent circuit:
Replace active elements by their small signal equivalent models
Short DC voltage sources
Open DC current sources
Transconductance is extremely important parameter
Relates AC gate voltage to AC drain current


Transconductance for a MOSFET increases with the square root of the
drain current I
D
and linearly with the excess gate voltage V
DSsat

( )
GS GS
D d
m GS THN
GS gs
v V
i i W
g K V V
v v L
=

= = =

12-Sep-13 ENEE419A Abshire Fall 2013 7

Small signal analysis (2)
Output resistance depends on channel length L and V
DS,sat
As L increases, drain current decreases and output resistance r
o
increases
If L is constant, decreasing V
DS,sat
causes drain current to decrease and
output resistance r
o
to increase
However, increasing L causes inherent speed of MOSFET to decrease
Perform AC analysis in SPICE using the .ac command
SPICE assumes that the user knows that AC values should be small
SPICE doesnt enforce the requirement for signals to be small, you do
Perform transient analysis in SPICE using the .tran command
AC analysis is inherently linear, so in order to see nonlinear effects must
use transient analysis

12-Sep-13 ENEE419A Abshire Fall 2013 8
Body Effect
As source-body potential
increases, threshold voltage
increases
For large values of V
SB
,
threshold change isnt
significant
For small value of V
SB
,
threshold changes a lot
Matters whenever source
and body are NOT shorted
12-Sep-13 ENEE419A Abshire Fall 2013 9
Body effect for small signals
Body effect occurs when substrate and source are not at same
potential, i.e. whenever substrate is not connected to source.
Substrate is at most negative potential (signal ground), but
source is not. This causes a signal voltage v
bs
between body
and source.
The substrate acts as a second gate, so the signal v
bs
gives rise
to a drain current and we have a body transconductance g
mb
constant
constant
2 2
~0.1 0.3
GS
DS
D
mb m
v
BS
v
th
SB
f SB
i
g g
v
V
v
V

=
=

= =

S
D
G
m gs
g v
gs
v
+
-
mb sb
g v
B
sb
v
+
-
o
r
12-Sep-13 ENEE419A Abshire Fall 2013 10
MOSFET Transition Frequency f
T
Examine the common gate circuit:
Drain at AC ground
C
gs
and C
gd
appear in parallel





current gain decreases to one at transition frequency f
T

(transition from amplifier to attenuator)
( )
( )
current gain
2
g
gs
gs gd
d m
d m gs
g gs gd
i
v
j C C
i g
i g v
i f C C

=
+
= =
+
( )
( )
,
2 2
2 2
3
2 3
3 4 4
m m
T
gs gs gd
DS sat GS THN
gs ox T
ox
g g
f
C C C
V K V V
C WLC f
L C L

=
+

= = =
12-Sep-13 ENEE419A Abshire Fall 2013 11
MOSFET Transition Frequency f
T
(2)
Inherent design tradeoff
For high speed, need minimum channel length and high V
DS,sat
For high output resistance (and high gain), need long channel length
Constant gain-bandwidth product
Higher speeds results in lower gain
Transition frequency is inherently smaller for PMOS than NMOS due to
lower hole mobility
For short-channel devices, mobility starts to decrease with
decreasing length due to velocity saturation


Again, for high speed need short L and high V
DS,sat
,
constant
DS sat
T
V
f
L L

12-Sep-13 ENEE419A Abshire Fall 2013 12
General Analog Design
Use L=2-5 times minimum
L=2 is a reasonable tradeoff between speed and gain
Use V
DS,sat
= 5% of Vdd
For Vdd = 5V, V
DS,sat
= 250 mV
Subthreshold transconductance





g
m
depends exponentially on V
GS
, linearly on I
D
as V
GS
increases, transistor moves to moderate, then strong inversion
in strong inversion, g
m
depends linearly on V
GS
, on square root of I
D
0
0
e 1 e
e 1 e
G S DS
T T
G S DS
T T
V V V
U U
D
V V V
U U
D D
m
G T T
W
I I
L
I W I
g I
V L U U

(
=
(

(
= = =
(

12-Sep-13 ENEE419A Abshire Fall 2013 13
Temperature Effects
Threshold voltage
Decreases as T




Mobility
Decreases as T

Drain current
Mobility causes less current, threshold voltage causes more current
At low V
GS
, threshold changes dominate and current increases as T
At high V
GS
, mobility changes dominate and current decreases as T
At one special bias point, the effects cancel
,
0
,
ln
2
ln
D poly
TH b
A ox
D poly
A
N
V k Q
T q N C T
N
k
q N

= +

( ) ( )
1.5
0
0
T
T T
T

| |
=
|
\ .
12-Sep-13 ENEE419A Abshire Fall 2013 14
Jacoboni, C., C. Canali, G. Ottaviani, and A. A. Quaranta, Solid
State Electron. 20, 2(1977) 77-89.
Solid line is:
vs=vso[1+Cexp(T/)]-1,
where vso=2.4107 cm s-1, C=0.8, =600K.
Temp dependence of drift velocity and saturation velocity
12-Sep-13 ENEE419A Abshire Fall 2013 15
Gain-f
T
product (GFT)
GFT can be written as product of open circuit gain with f
T



GFT is independent of drain current, depends only on channel length
As gain goes up, speed goes down (and vice versa)
In strong inversion, gain decreases as drain current increases (or
as gate-source voltage increases)



In subthreshold, gain is independent
of drain current

2
2
1 3
2 2
m
m o T
gs D
g
GFT g r f
C I L

= = =
( )
( )
( )
2
,
2 2
1 2 2
2
D
GS THN
m o
D GS THN DS sat D
GS THN
W W
W
K I K
K V V
L L
L
g r
K W
I V V V I
V V
L

= = = = =

1
D
m o
T D T
I
g r
U I U


= =