ECO-PACTM 2 IGBT Module

Preliminary Data Sheet

PSHI 50/12*

IC25 = 49 A VCES = 1200 V VCE(sat)typ. = 3.1 V

F10 A1 K10 K13 H13

S18 N9 NTC P18

PSHI 50/12*
*NTC optional

IGBTs
Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C VGE = 15 V; RG = 47 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 47 ; TVJ = 125C non-repetitive TC = 25C Conditions Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 49 33 50 VCES 10 208 V V A A A s W

Features

Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop

Leads suitable for PC board soldering

UL registered, E 148688

Applications
AC motor control AC servo and robot drives power supplies

Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 3.1 3.5 4.5 3.7 6.5 1.1 4.2 180 100 70 500 70 4.6 3.4 1.65 1.2 V V V mA mA nA ns ns ns ns mJ mJ nF 0.6 K/W K/W

Advantages
Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight

VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH

IC = 50 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C

VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 30 A VGE = 15/0 V; RG = 47

VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT)

with heatsink compound (0.42 K/m.K; 50 m)

Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.

2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

PSHI 50/12
Reverse diodes (FRED)
Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 30 A; TVJ = 25C TVJ = 125C Maximum Ratings 49 31 A A Package style and outline
Dimensions in mm (1mm = 0.0394)

Characteristic Values min. typ. max. 2.4 1.77 27 150 2.6 2.7 V V A ns 1.3 K/W K/W

IF = 30 A; diF/dt = 500 A/s; TVJ = 125C VR = 600 V; VGE = 0 V

with heatsink compound (0.42 K/m.K; 50 m)

Temperature Sensor NTC

Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 455 470 3474 485 k K

Module
Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight IISOL 1 mA; 50/60 Hz Mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2

Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g

2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

PSHI 50/12
80
A IC
VGE = 17 V 15 V 13 V 11V

80 A IC 60
VGE = 17V 15V 13V 11V

60

40
TVJ = 25C

40

20

9V

20

9V TVJ = 125C

42T120

4
VCE

6 V 7

42T120

5
VCE

6 V 7

Fig. 1 Typ. output characteristics

80
A IC 50 40 A 30

Fig. 2 Typ. output characteristics

60

VCE = 20V

IF

40
20

TVJ = 125C

TVJ = 25C

20
TVJ = 125C TVJ = 25C
42T120

10 0
42T120

10

12
VGE

14 V 16

2
VF

Fig. 3 Typ. transfer characteristics

Fig. 4 Typ. forward characteristics of free wheeling diode

50
trr

20
V

200 160 ns 120

TVJ = 125C VR = 600 V IF = 15 A IRM

15
VGE

40 A
IRM

trr

30 10
VCE = 600V IC = 25A

20 10
42T120

80 40

42T120

40

80

120
QG

nC

160

200

400

600
-di/dt

A/s 800

1000

Fig. 5 Typ. turn on gate charge

Fig. 6 Typ. turn off characteristics of free wheeling diode

2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

PSHI 50/12

15
mJ Eon

VCE = 600 V VGE = 15 V RG = 47 TVJ = 125C

150 ns 100 t Eoff

12
mJ td(off) Eoff

600 ns 400 t

10

VCE = 600V VGE = 15V RG = 47 TVJ = 125C

td(on) tr

50

200

Eon

42T120

20

40
IC

60

tf 0 20 40 IC A

42T120

0 60

Fig. 7 Typ. turn on energy and switching

Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current
8
mJ t Eoff td(off) 800 ns 600 t

4
mJ Eon

td(on)

160 ns 120

Eon tr
VCE = 600 V VGE = 15 V IC = 25 A TVJ = 125C
42T120

Eoff

80

4
VCE = 600 V VGE = 15 V IC = 25 A TVJ = 125C

400

40

200 tf

20

40

60
RG

80 100

42T120

20

40

60
RG

80

100

Fig. 9 Typ. turn on energy and switching

Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor
10 K/W
diode

60
A ICM

40

RG = 47 TVJ = 125C

ZthJC

1
IGBT

0,1 0,01 0,001

single pulse

20

42T120

200

400

600

800 1000 1200 1400 V

VCE

0,0001 0,00001 0,0001 0,001

MDI...50-12P1

0,01

0,1 t

s 10

Fig. 11 Reverse biased safe operating area

Fig. 12

Typ. transient thermal impedance RBSOA

2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20