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PO WE R SEM IC O ND U C TO RS
1N5820 – 1N5822
3.0A SCHOTTKY BARRIER RECTIFIER
Features
! Schottky Barrier Chip
! Guard Ring Die Construction for
Transient Protection
! High Current Capability A B A
! Low Power Loss, High Efficiency
! High Surge Current Capability
! For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications C
D
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
60 Hz Resistive or Inductive
Load 9.5mm Lead Length
3 10
1.0
1
Tj = 25ºC
Pulse Width = 300µs
2% Duty Cycle
0 0.1
10 50 100 150 0.1 0.3 0.5 0.7 0.9 1.1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
TL, LEAD TEMPERATURE (ºC)
Fig. 2 Typical Forward Voltage Characteristics
Fig. 1 Forward Current Derating Curve
100 1000
Tj = 25ºC
IFSM , PEAK FORWARD SURGE CURRENT (A)
f = 1MHz
Cj, JUNCTION CAPACITANCE (pF)
80
60
100
40
20
8.3ms Single Half Sine-Wave
JEDEC Method
0 10
0.1 1.0 10 100
1 10 100
NUMBER OF CYCLES AT 60 Hz VR, REVERSE VOLTAGE (V)
Fig. 3 Peak Forward Surge Current Fig. 4 Typical Junction Capacitance
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.