PD - 93756D

IRLML6401
l Ultra Low On-Resistance
HEXFET® Power MOSFET
l P-Channel MOSFET
l SOT-23 Footprint
G 1
l Low Profile (<1.1mm) VDSS = -12V
l Available in Tape and Reel 3 D

l Fast Switching RDS(on) = 0.05Ω

S 2
l 1.8V Gate Rated

Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.

A thermally enhanced large pad leadframe has been

incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest Micro3
footprint. This package, dubbed the Micro3, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.3
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -3.4 A
IDM Pulsed Drain Current  -34
PD @TA = 25°C Power Dissipation 1.3
W
PD @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
EAS Single Pulse Avalanche Energy„ 33 mJ
VGS Gate-to-Source Voltage ± 8.0 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambientƒ 75 100 °C/W

www.irf.com 1
04/29/03
IRLML6401
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.050 VGS = -4.5V, ID = -4.3A ‚
Ω
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.085 VGS = -2.5V, ID = -2.5A ‚
––– ––– 0.125 VGS = -1.8V, ID = -2.0A ‚
VGS(th) Gate Threshold Voltage -0.40 -0.55 -0.95 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 8.6 ––– ––– S VDS = -10V, ID = -4.3A
––– ––– -1.0 VDS = -12V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8.0V
Qg Total Gate Charge ––– 10 15 ID = -4.3A
Qgs Gate-to-Source Charge ––– 1.4 2.1 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 2.6 3.9 VGS = -5.0V‚
td(on) Turn-On Delay Time ––– 11 ––– VDD = -6.0V
ns
tr Rise Time ––– 32 ––– ID = -1.0A
td(off) Turn-Off Delay Time ––– 250 ––– RD = 6.0Ω
tf Fall Time ––– 210 ––– RG = 89Ω ‚
Ciss Input Capacitance ––– 830 ––– VGS = 0V
Coss Output Capacitance ––– 180 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 125 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -1.3

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -34
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.3A, VGS = 0V ‚
t rr Reverse Recovery Time ––– 22 33 ns TJ = 25°C, IF = -1.3A
Q rr Reverse RecoveryCharge ––– 8.0 12 nC di/dt = -100A/µs ‚

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
ƒ Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
„ Starting TJ = 25°C, L = 3.5mH
RG = 25Ω, IAS = -4.3A.

2 www.irf.com
 IRLML6401

100 100
VGS VGS
TOP -7.0V TOP -7.0V
-5.0V -5.0V
-I D, Drain-to-Source Current (A)

-4.5V

-I D, Drain-to-Source Current (A)

-4.5V
-3.0V -3.0V
10 -2.5V 10 -2.5V
- 1.8V -1.8V
-1.5V -1.5V
BOTTOM -1.0V BOTTOM -1.0V

1 1
-1.0V
-1.0V

0.1 0.1

20µs PULSE WIDTH 20µs PULSE WIDTH

Tj = 25°C Tj = 150°C
0.01 0.01
0.1 1 10 100 0.1 1 10 100

-V DS , Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100.0 2.0
ID = -4.3A
RDS(on) , Drain-to-Source On Resistance

T J = 25°C
-I D , Drain-to-Source Current (Α )

1.5
T J = 150°C
10.0
(Normalized)

1.0

1.0
0.5

VDS = -12V
20µs PULSE WIDTH VGS = -4.5V
0.1 0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
1.0 1.5 2.0 2.5 3.0 3.5 4.0
TJ , Junction Temperature ( °C)
-V GS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
www.irf.com 3
 IRLML6401

1200 10
VGS = 0V, f = 1 MHZ ID = -4.3A
Ciss = Cgs + Cgd, Cds SHORTED VDS =-10V

-VGS , Gate-to-Source Voltage (V)

1000 Crss = Cgd
8
Coss = Cds + Cgd
Ciss
C, Capacitance(pF)

800
6

600

4
400
Coss
200
Crss 2

0 0
1 10 100 0 4 8 12 16
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-ISD , Reverse Drain Current (A)

100
-IID , Drain Current (A)

10
TJ = 150 ° C 10us

10 100us
TJ = 25 ° C
1ms
1

1 10ms

TC = 25 ° C
TJ = 150 ° C
V GS = 0 V Single Pulse
0.1 0.1
0.2 0.6 1.0 1.4 1.8 0.1 1 10 100
-VSD,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
4 www.irf.com
 IRLML6401

5.0 80
ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP -1.9A
-3.4A
4.0 BOTTOM -4.3A
60
-ID , Drain Current (A)

3.0

40

2.0

20
1.0

0.0 0
25 50 75 100 125 150 25 50 75 100 125 150
TC , Case Temperature ( ° C) Starting TJ , Junction Temperature ( °C)

Fig 9. Maximum Drain Current Vs. Fig 10. Maximum Avalanche Energy
Case Temperature Vs. Drain Current

1000
Thermal Response (Z thJA )

100
D = 0.50

0.20

10 0.10
0.05
PDM
0.02
0.01 t1
1 SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5
IRLML6401

RDS ( on ) , Drain-to-Source On Resistance ( Ω )

0.10 0.20
RDS(on) , Drain-to -Source Voltage ( Ω )

0.09 VGS = -1.8V VGS = -2.5V

0.08 0.15

0.07

0.06 0.10

0.05 Id = -4.3A

0.04 0.05 VGS = -4.5V

0.03

0.02 0.00
1.0 2.0 3.0 4.0 5.0 6.0 7.0
0 10 20 30 40
-VGS, Gate -to -Source Voltage ( V ) -I D , Drain Current ( A )

Fig 12. Typical On-Resistance Vs. Fig 13. Typical On-Resistance Vs.
Gate Voltage Drain Current

0.8
-VGS(th) Gate threshold Voltage (V)

0.7

0.6 ID = -250µA

0.5

0.4

0.3
-75 -50 -25 0 25 50 75 100 125 150

T J , Temperature ( °C )

Fig 14. Typical Threshold Voltage Vs.

Junction Temperature

6 www.irf.com
 IRLML6401

Micro3 Package Outline

Dimensions are shown in millimeters (inches)

D LEAD ASSIGNMENTS INCHES MILLIMETERS

3 DIM
-B- 1 - GATE MIN MAX MIN MAX
2 - SOURCE A .032 .044 0.82 1.11
3 - DRAIN A1 .001 .004 0.02 0.10

3 3 B .015 .021 0.38 0.54

E H
C .004 .006 0.10 0.15
-A- 0.20 ( .008 ) M A M
1 2 D .105 .120 2.67 3.05
e .0750 BASIC 1.90 BASIC
e1 .0375 BASIC 0.95 BASIC
e E .047 .055 1.20 1.40
H .083 .098 2.10 2.50
e1
L .005 .010 0.13 0.25
θ 0° 8° 0° 8°
A θ
MINIMUM RECOMMENDED FOOTPRINT
-C- 0.008 (.003) 0.80 ( .031 )
A1 L C 3X
B 3X
3X 3X 0.90
0.10 (.004) M C AS B S ( .035 ) 2.00
3X ( .079 )

NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH. 0.95 ( .037 )
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. 2X

www.irf.com 7
IRLML6401
Part Marking Information
Micro3
Notes : T his part marking information applies to devices produced before 02/26/2001
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
EXAMPLE: T HIS IS AN IRLML6302
WORK
YEAR Y WEEK W
2001 1 01 A
PART NUMBER
2002 2 02 B
2003 3 03 C
1994 4 04 D
DATE 1995 5
CODE 1996 6
1997 7
1998 8
1999 9
2000 0 24 X
PART NUMBER CODE REFERENCE:
25 Y
1A = IRLML2402 26 Z
1B = IRLML2803
WW = (27-52) IF PRECEDED BY A LETT ER
1C = IRLML6302
1D = IRLML5103 WORK
YEAR Y WEEK W
1E = IRLML6402
1F = IRLML6401 2001 A 27 A
2002 B 28 B
1G = IRLML2502
2003 C 29 C
1H = IRLML5203 1994 D 30 D
1995 E
1996 F
DAT E CODE EXAMPLES: 1997 G
1998 H
YWW = 9503 = 5C 1999 J
YWW = 9532 = EF 2000 K 50 X
51 Y
52 Z

Notes : T his part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECE DED BY LAS T DIGIT OF CALENDAR YEAR
WORK
Y = YEAR YEAR Y WEEK W
W = WEEK 2001 1 01 A
PART NUMBER
2002 2 02 B
2003 3 03 C
1994 4 04 D
1995 5
LOT
1996 6
CODE
1997 7
1998 8
1999 9
2000 0 24 X
PART NUMBER CODE REFERENCE:
25 Y
A= IRLML2402 26 Z
B= IRLML2803 W = (27-52) IF PRECEDED BY A LETTER
C= IRLML6302
D= IRLML5103 WORK
YEAR Y WEEK W
E= IRLML6402
F= IRLML6401 2001 A 27 A
2002 B 28 B
G= IRLML2502
2003 C 29 C
H= IRLML5203 1994 D 30 D
1995 E
1996 F
1997 G
1998 H
1999 J
2000 K 50 X
51 Y
52 Z

8 www.irf.com
 IRLML6401
Micro3 Tape & Reel Information
Dimensions are shown in millimeters (inches)

2.05 ( .080 ) 1.6 ( .062 ) 1.32 ( .051 )

1.95 ( .077 ) 1.5 ( .060 )
1.85 ( .072 ) 1.12 ( .045 )
4.1 ( .161 )
3.9 ( .154 ) 1.65 ( .065 )

TR 3.55 ( .139 ) 8.3 ( .326 )

3.45 ( .136 ) 7.9 ( .312 )

FEED DIRECTION 4.1 ( .161 )

3.9 ( .154 ) 1.1 ( .043 ) 0.35 ( .013 )
0.9 ( .036 ) 0.25 ( .010 )

178.00
( 7.008 )
MAX.

9.90 ( .390 )
8.40 ( .331 )

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/03
www.irf.com 9