STTH60L06C

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Table 1: Main Product Characteristics IF(AV) VRRM Tj VF (typ) trr (max) FEATURES AND BENEFITS

Up to 2 x 40 A 600 V 175C 1.0 V 65 ns

A1 K A2

Ultrafast switching Low reverse current Low thermal resistance Reduces switching & conduction losses

A1

A2

TO-247 STTH60L06CW

DESCRIPTION The STTH60L06, which is using ST Turbo 2 600V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous mode PFC boost diode. Table 2: Order Codes Part Number STTH60L06CW

Marking STTH60L06CW

Table 3: Absolute Ratings (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) IF(AV) RMS forward voltage Average forward current = 0.5 Tc = 125C Per diode Tc = 110C Per device Tc = 100C Per diode Tc = 80C Per device tp = 10ms sinusoidal Value 600 60 30 60 40 80 210 -65 to + 175 175 Unit V A A

IFSM Tstg Tj

Surge non repetitive forward current Storage temperature range Maximum operating junction temperature

A C C

September 2004

REV. 1

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Table 4: Thermal Resistance Symbol Rth(j-c) Rth(c) Junction to case Coupling Parameter Per diode Total Value (max). 1.05 0.68 0.3 C/W Unit C/W

When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Table 5: Static Electrical Characteristics (per diode) Symbol IR * VF ** Parameter Test conditions VR = VRRM 80 IF = 30A 1.0 IF =60A 1.24 Tj = 150C Forward voltage drop Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Pulse test: ** tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.95 x IF(AV) + 0.010 I F (RMS) * tp = 5 ms, < 2%

Min.

Typ

Max. 25 800 1.55 1.25 1.78 1.55

Unit A

Reverse leakage current Tj = 25C

Table 6: Dynamic Characteristics (per diode) Symbol trr IRM tfr VFP Parameter Reverse recovery time Reverse recovery current Forward recovery time Forward recovery voltage Tj = 25C Test conditions IF = 0.5A Irr = 0.25A IR =1A IF = 1A dIF/dt = 50 A/s VR =30V Tj = 125C IF = 30A VR = 400V dIF/dt = 100 A/s Tj = 25C Tj = 25C IF = 30A dIF/dt = 100 A/s VFR = 1.1 x VFmax IF = 30A dIF/dt = 100 A/s VFR = 1.1 x VFmax 2.5 65 11.5 Min. Typ Max. Unit 65 90 16 500 A ns V ns

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Figure 1: Conduction losses versus average forward current (per diode)
P(W)
80 70 100

Figure 2: Forward voltage drop versus forward current (per diode)

IFM(A)

= 0.1 = 0.05

= 0.2

= 0.5

90 80 70
Tj=150C (maximum values)

60 50 40 30 20 10

=1

60 50 40

Tj=150C (typical values) Tj=25C (maximum values)

30 20

IF(AV)(A)
0 0 10 20 30

=tp/T
40

tp
50

10 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VFM(V)
1.6 1.8 2.0 2.2

Figure 3: Relative variation of thermal impedance junction to case versus pulse duration
Zth(j-c)/Rth(j-c)
1.0 0.9 0.8 0.7 0.6

Figure 4: Peak reverse recovery current versus dIF/dt (typical values, per diode)
IRM(A)
45 40 35
IF=IF(AV) VR=400V Tj=125C IF=2 x IF(AV)

30 25

IF=0.5 x IF(AV)

0.5 20 0.4 0.3 15

T
0.2
Single pulse

10

0.1 0.0 1.E-03 1.E-02

tp(s)
1.E-01

=tp/T

tp
1.E+00

dIF/dt(A/s)
0 0 50 100 150 200 250 300 350 400 450 500

Figure 5: Reverse recovery time versus dIF/dt (typical values, per diode)
trr(ns)
800 700 600 500 400 300 200 100
IF=2 x IF(AV) VR=400V Tj=125C

Figure 6: Reverse recovery charges versus dIF/dt (typical values, per diode)
Qrr(nC)
3500
VR=400V Tj=125C

3000 2500 2000

IF=IF(AV) IF=0.5 x IF(AV)

IF=2 x IF(AV)

IF=IF(AV)

1500 1000 500

IF=0.5 x IF(AV)

dIF/dt(A/s)
0 0 50 100 150 200 250 300 350 400 450 500 0 0 100

dIF/dt(A/s)
200 300 400 500

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Figure 7: Reverse recovery softness factor versus dIF/dt (typical values, per diode)
S factor
1.6 1.4 1.2 1.0 1.0 0.8 0.8 0.6 0.4 0.2 0.6 0.4 0.2
QRR IF=IF(AV) VR=400V Reference: Tj=125C IF< 2 x IF(AV) VR=400V Tj=125C

Figure 8: Relative variations of dynamic parameters versus junction temperature

1.4
S factor

1.2

trr IRM

dIF/dt(A/s)
0.0 0 50 100 150 200 250 300 350 400 450 500

Tj(C)
0.0 25 50 75 100 125

Figure 9: Transient peak forward voltage versus dIF/dt (typical values, per diode)
VFP(V)
10 9 8 7 6
IF=IF(AV) Tj=125C

Figure 10: Forward recovery time versus dIF/dt (typical values, per diode)
tfr(ns)
450 400 350 300 250
IF=IF(AV) VFR=1.1 x VF max. Tj=125C

5 200 4 3 2 1 0 0 50 100 150 200 250 300 350 400 450 500 150 100

dIF/dt(A/s)

50 0 0 100

dIF/dt(A/s)
200 300 400 500

Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode)
C(pF)
1000
F=1MHz VOSC=30mVRMS Tj=25C

100

VR(V)
10 1 10 100 1000

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STTH60L06C
Figure 12: TO-247 Package Mechanical Data REF.
V

Dia.

L5

L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3

F1

L1 D

DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133 G 10.90 0.429 H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5 5 V2 60 60 Dia. 3.55 3.65 0.139 0.143

Table 7: Ordering Information Ordering type STTH60L06CW

Marking STTH60L06CW

Package TO-247

Weight 4.46 g

Base qty 50

Delivery mode Tube

Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 m.N. Maximum torque value: 1.0 m.N.

Table 8: Revision History Date 07-Sep-2004 Revision 1 Description of Changes First issue

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