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STTH60L06C

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Table 1: Main Product Characteristics

I

F(AV)

Up to 2 x 40 A

V RRM

600 V

 

T

j

175°C

V F (typ)

1.0 V

t rr (max)

65 ns

FEATURES AND BENEFITS

Ultrafast switching

Low reverse current

Low thermal resistance

Reduces switching & conduction losses

DESCRIPTION

The STTH60L06, which is using ST Turbo 2 600V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous mode PFC boost diode.

A1 K A2
A1
K
A2
A1 K A2 K A2 A1 TO-247 STTH60L06CW

K A2

A1

TO-247

STTH60L06CW

Table 2: Order Codes

Part Number

Marking

STTH60L06CW

STTH60L06CW

Table 3: Absolute Ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

V

RRM

Repetitive peak reverse voltage

600

V

I

F(RMS)

RMS forward voltage

60

A

 

I

F(AV)

Average forward current δ = 0.5

Tc = 125°C Tc = 110°C

Per diode

30

A

 

Per device

60

 

Tc = 100°C Tc = 80°C

Per diode

40

Per device

80

 

I

FSM

Surge non repetitive forward current

tp = 10ms sinusoidal

210

A

 

T

stg

Storage temperature range

-65 to + 175

°C

 

T

j

Maximum operating junction temperature

175

°C

September 2004

REV. 1

1/6

STTH60L06C

Table 4: Thermal Resistance

Symbol

 

Parameter

 

Value (max).

Unit

R

th(j-c)

Junction to case

Per diode

   

1.05

 

°C/W

Total

 

0.68

 

R th(c)

Coupling

 

0.3

 

°C/W

When the diodes 1 and 2 are used simultaneously:

 

Tj(diode 1) = P(diode 1) x R th(j-c) (Per diode) + P(diode 2) x R th(c)

 

Table 5: Static Electrical Characteristics (per diode)

Symbol

Parameter

 

Test conditions

 

Min.

 

Typ

Max.

Unit

I R *

Reverse leakage current

T j = 25°C

V R = V RRM

     

25

µA

T j = 150°C

   

80

 

800

V F **

Forward voltage drop

T j = 25°C

I F = 30A

   

1.55

V

T j = 150°C

   

1.0

1.25

T j = 25°C

I F =60A

   

1.78

T j = 150°C

   

1.24

1.55

Pulse test:

* tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.95 x I F(AV) + 0.010 I F 2 (RMS)

 

Table 6: Dynamic Characteristics (per diode)

 

Symbol

Parameter

 

Test conditions

 

Min.

Typ

Max.

Unit

 

t

rr

Reverse recovery

T j = 25°C

I F = 0.5A

Irr = 0.25A I R =1A

     

65

ns

 

time

I F = 1A

dI F /dt = 50 A/µs V R =30V

 

65

90

I RM

Reverse recovery

T j = 125°C

I F = 30A

V R = 400V

   

11.5

16

A

current

dI F /dt = 100 A/µs

 
 

t

fr

Forward recovery

T j = 25°C

I F = 30A

dI F /dt = 100 A/µs

     

500

ns

 

time

V FR = 1.1 x V Fmax

 

V

FP

Forward recovery

T j = 25°C

I F = 30A

dI F /dt = 100 A/µs

   

2.5

 

V

 

voltage

V FR = 1.1 x V Fmax

 

2/6

/dt = 100 A/µs     2.5   V   voltage V F R = 1.1

STTH60L06C

Figure 1: Conduction losses versus average forward current (per diode) P(W) 80 δ = 0.1
Figure 1: Conduction losses versus average
forward current (per diode)
P(W)
80
δ = 0.1
δ = 0.2
δ = 0.5
70
δ = 0.05
60
50
δ =
1
40
30
T
20
10
(A)
δ =tp/T
tp
I F(AV)
0
0
10
20
30
40
50
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration
Z
/R
th(j-c)
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
T
0.2
Single pulse
0.1
t
p (s)
δ =tp/T
tp
0.0
1.E-03
1.E-02
1.E-01
1.E+00
Figure 5: Reverse recovery time versus dI F /dt
(typical values, per diode)
t
(ns)
rr
800
V
R =400V
T j =125°C
700
600
500
I F =2
x I
F(AV)
400
I F
=I
F(AV)
I F =0.5 x
I F(AV)
300
200
100
dI
F /dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
Figure 2: Forward voltage drop versus forward current (per diode) I (A) FM 100 90
Figure 2: Forward voltage drop versus forward
current (per diode)
I
(A)
FM
100
90
T
j =150°C
(maximum
values)
80
70
T j =150°C
60
(typical values)
T j =25°C
50
(maximum values)
40
30
20
10
(V)
V FM
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Figure 4: Peak reverse recovery current versus dI F /dt (typical values, per diode) I
Figure 4: Peak reverse recovery current versus
dI F /dt (typical values, per diode)
I
(A)
RM
45
V
R =400V
T j =125°C
40
I F =2
x I
F(AV)
35
I F
=I
F(AV)
30
I
F =0.5
x I
F(AV)
25
20
15
10
5
dI
F /dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
Figure 6: Reverse recovery charges versus dI F /dt (typical values, per diode) Q (nC)
Figure 6: Reverse recovery charges versus
dI F /dt (typical values, per diode)
Q (nC)
rr
3500
V
R =400V
T
=125°C
j
3000
I F =2 x I
F(AV)
2500
I F =I
F(AV)
2000
I
F =0.5
x I
F(AV)
1500
1000
500
dI /dt(A/µs)
F
0
0
100
200
300
400
500

3/6

STTH60L06C

Figure 7: Reverse recovery softness factor versus dI F /dt (typical values, per diode) S
Figure 7: Reverse recovery softness factor
versus dI F /dt (typical values, per diode)
S factor
1.6
I
< 2 x I
F
F(AV)
V
R =400V
1.4
T
=125°C
j
1.2
1.0
0.8
0.6
0.4
0.2
dI
F /dt(A/µs)
0.0
0 50
100
150
200
250
300
350
400
450
500
Figure 9: Transient peak forward voltage versus dI F /dt (typical values, per diode) V
Figure 9: Transient peak forward voltage
versus dI F /dt (typical values, per diode)
V
(V)
FP
10
I
F =I
F(AV)
9
T
=125°C
j
8
7
6
5
4
3
2
1
dI
F /dt(A/µs)
0
0 50
100
150
200
250
300
350
400
450
500
Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F=1MHz
Figure 11: Junction capacitance versus
reverse voltage applied (typical values, per
diode)
C(pF)
1000
F=1MHz
=30mV
V OSC
RMS
T
=25°C
j
100
V
R (V)
10
1
10
100
1000

4/6

Figure 8: Relative variations of dynamic parameters versus junction temperature 1.4 S factor 1.2 1.0
Figure 8: Relative variations of dynamic
parameters versus junction temperature
1.4
S factor
1.2
1.0
0.8
Q RR
0.6
I
=I
F
F(AV)
t rr
V
R =400V
Reference: T =125°C
j
I RM
0.4
0.2
T (°C)
j
0.0
25 50 75 100 125 Figure 10: Forward recovery time versus dI F /dt (typical
25
50
75
100
125
Figure 10: Forward recovery time versus dI F /dt
(typical values, per diode)
t (ns)
fr
450
I =I
F
F(AV)
400
=1.1 x V
F max.
V FR
T
=125°C
j
350
300
250
200
150
100
50
dI /dt(A/µs)
F
0
0
100
200
300
400
500

STTH60L06C

Figure 12: TO-247 Package Mechanical Data

L

V Dia. V A H L5 L2 L4 F2 F1 L1 F3 D V2 L3
V
Dia.
V
A
H
L5
L2
L4
F2
F1
L1
F3
D
V2
L3
F4
F(x3)
M
E
G
=
=
   

DIMENSIONS

 

REF.

Millimeters

 

Inches

Min.

Typ.

Max.

Min.

Typ.

Max.

A

4.85

 

5.15

0.191

 

0.203

D

2.20

 

2.60

0.086

 

0.102

E

0.40

 

0.80

0.015

 

0.031

F

1.00

 

1.40

0.039

 

0.055

F1

 

3.00

   

0.118

 

F2

 

2.00

   

0.078

 

F3

2.00

 

2.40

0.078

 

0.094

F4

3.00

 

3.40

0.118

 

0.133

G

 

10.90

   

0.429

 

H

15.45

 

15.75

0.608

 

0.620

L

19.85

 

20.15

0.781

 

0.793

L1

3.70

 

4.30

0.145

 

0.169

L2

 

18.50

   

0.728

 

L3

14.20

 

14.80

0.559

 

0.582

L4

 

34.60

   

1.362

 

L5

 

5.50

   

0.216

 

M

2.00

 

3.00

0.078

 

0.118

V

 

   

 

V2

 

60°

   

60°

 

Dia.

3.55

 

3.65

0.139

 

0.143

Table 7: Ordering Information

Ordering type

Marking

Package

Weight

Base qty

Delivery mode

STTH60L06CW

STTH60L06CW

TO-247

4.46 g

50

Tube

Epoxy meets UL94, V0

 

Cooling method: by conduction (C)

Recommended torque value: 0.8 m.N.

Maximum torque value: 1.0 m.N.

Table 8: Revision History

Date

Revision

 

Description of Changes

 

07-Sep-2004

1

First issue

8: Revision History Date Revision   Description of Changes   07-Sep-2004 1 First issue 5/6

5/6

STTH60L06C

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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6/6

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