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DESCRIPTION
The FLM0910-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudynas stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Item
Condition
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
Gate-Source Voltage
VGS
-5
25.0
Tc = 25C
PT
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100.
Symbol
Test Conditions
IDSS
gm
Vp
VGSO
P1dB
G1dB
Drain Current
Idsr
add
Power-added Efficiency
Gain Flatness
Min.
-
Limit
Typ. Max.
1700 2600
1700
Unit
mA
-0.5
-1.5
-3.0
mS
V
IGS = -85A
-5.0
35.5
36.0
dBm
6.5
7.5
dB
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 9.5 ~10.5 GHz,
ZS=ZL= 50 ohm
1100 1300
mA
29
0.6
dB
-44
-46
dBc
IM3
Thermal Resistance
Rth
Channel to Case
5.0
6.0
C/W
80
Tch
CASE STYLE: IA
Edition 1.3
August 2004
FLM0910-4F
X, Ku-Band Internally Matched FET
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f = 10.5 GHz
32 f1 = 10.51 GHz
2
2-tone test
30
24
18
12
50
100
150
30
Pout
28
-15
26
-25
-35
24
IM3
22
-45
20
-55
IM3 (dBc)
200
16
18
20
22
24
VDS=10V
P1dB
36
Pin=29dBm
36
27dBm
35
26dBm
34
25dBm
33
32
37
34
Pout
40
32
30
30
add
28
20
26
10
23dBm
31
9.5
10.0
10.5
19
Frequency (GHz)
21
23
25
27
29
add (%)
FLM0910-4F
X, Ku-Band Internally Matched FET
S11
S22
+j100
+j25
10.3
0.1
+j250
10.5
10.1
+j10
10.7
9.9
9.3GHz
50
10
100
180
250
10.3
9.7
9.5
9.5
9.9
9.7
10.1
9.9
10.7
10.5
-j250
9.9
9.3GHz
9.3GHz
9.7
10.1
-j10
9.5
10.7
10.5
S21
S12
+90
0.2
+j50
10.3
10.1
10.7
9.7
10.5
9.3GHz
10.3
9.5
-j25
-j100
-j50
FREQUENCY
(MHZ)
9300
9400
9500
9600
9700
9800
9900
10000
10100
10200
10300
10400
10500
10600
10700
S11
MAG
ANG
.585
.559
.530
.467
.435
.410
.385
.378
.381
.402
.427
.456
.499
.532
.553
-106.3
-115.3
-125.8
-150.3
-165.5
177.6
159.3
140.6
121.2
102.4
85.0
69.1
46.8
31.7
21.2
-90
S-PARAMETERS
VDS = 10V, IDS = 1100mA
S21
S12
MAG
ANG
MAG
ANG
MAG
ANG
2.447
2.515
2.585
2.763
2.841
2.906
2.934
2.946
2.956
2.964
2.943
2.898
2.742
2.590
2.448
.686
.677
.666
.625
.596
.557
.515
.463
.409
.356
.313
.277
.246
.243
.251
-65.4
-70.8
-76.4
-89.7
-97.3
-106.1
-115.8
-126.6
-139.1
-153.1
-169.5
171.6
138.5
111.8
91.3
48.4
40.1
31.9
13.9
4.0
-6.5
-17.0
-27.6
-38.1
-48.9
-59.8
-71.0
-89.2
-103.3
-114.0
.053
.053
.051
.049
.049
.046
.049
.051
.052
.053
.057
.059
.064
.065
.067
113.7
103.2
90.5
62.4
47.4
28.0
13.1
-7.5
-27.6
-45.8
-61.5
-79.3
-104.5
-124.2
-137.7
S22
FLM0910-4F
X, Ku-Band Internally Matched FET
1.5 Min.
(0.059)
1
0.1
(0.004)
9.70.15
(0.382)
2-R 1.250.15
(0.049)
4
2
3
1.80.15
(0.071)
1.5 Min.
(0.059)
0.5
(0.020)
3.2 Max.
(0.126)
13.00.15
(0.512)
1.15
(0.045)
0.2 Max.
(0.008)
8.1
(0.319)
1.
2.
3.
4.
Gate
Source (Flange)
Drain
Source (Flange)
Unit: mm(inches)
16.50.15
(0.650)
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.us.eudyna.com
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.