2N3819

Vishay Siliconix

N-Channel JFET

PRODUCT SUMMARY
VGS(off) (V)
v 8

V(BR)GSS Min (V)

25

gfs Min (mS)

2

IDSS Min (mA)

2

FEATURES
D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 60 @ 100 mA

BENEFITS
D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification

APPLICATIONS
D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches

DESCRIPTION
The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz. Its TO-226AA (TO-92) package is compatible with various tape-and-reel options for automated assembly (see Packaging Information). For similar products in TO-206AF (TO-72) and TO-236 (SOT-23) packages, see the 2N4416/2N4416A/SST4416 data sheet.

TO-226AA (TO-92)
S 1

Top View

ABSOLUTE MAXIMUM RATINGS

Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C Document Number: 70238 S04028Rev. D ,04-Jun-01 Lead Temperature (1/16 from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C www.vishay.com

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2N3819
Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Drain Cutoff Current Drain-Source On-Resistance Gate-Source Voltage Gate-Source Forward Voltage V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS VGS(F) IG = 1 mA , VDS = 0 V VDS = 15 V, ID = 2 nA VDS = 15 V, VGS = 0 V VGS = 15 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = 8 V VGS = 0 V, ID = 1 mA VDS = 15 V, ID = 200 mA IG = 1 mA , VDS = 0 V 0.5 2 25 35 3 10 0.002 0.002 20 2 150 2.5 0.7 7.5 V pA W V 8 20 2 2 mA nA mA

Symbol

Test Conditions

Min

Typa

Max

Unit

Dynamic
Common-Source Forward Transconductancec Common-Source Output Conductancec Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec f = 1 kHz gfs gos Ciss Crss en VDS = 15 V VGS = 0 V f = 100 MHz f = 1 kHz VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 100 Hz 2 1.6 5.5 5.5 25 2.2 0.7 6 50 8 4 pF nV Hz NH 6.5 mS mS

Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms, duty cycle v2%. c. This parameter not registered with JEDEC.

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
20 10 rDS(on) Drain-Source On-Resistance ( ) gfs Forward Transconductance (mS) 500 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz

On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage

100

IDSS Saturation Drain Current (mA)

16

IDSS

400

80

gos Output Conductance (mS)

12

gfs

300

rDS gos

60

200

40

IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDS = 15 V, VGS = 0 V f = 1 kHz

100

20

0 0 2 4 6 8 10

0 VGS(off) Gate-Source Cutoff Voltage (V)

0 0 2 4 6 8 10 VGS(off) Gate-Source Cutoff Voltage (V)

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Document Number: 70238 S04028Rev. D ,04-Jun-01

2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
100 nA

Gate Leakage Current

10 5 mA

Common-Source Forward Transconductance vs. Drain Current

VGS(off) = 3 V VDS = 10 V f = 1 kHz

10 nA TA = 125_C

gfs Forward Transconductance (mS)

1 mA 0.1 mA

8 TA = 55_C 6 25_C 4 125_C 2

IG Gate Leakage

1 nA

100 pA 5 mA 10 pA TA = 25_C 1 mA 0.1 mA

IGSS @ 125_C

1 pA

IGSS @ 25_C

0.1 pA 0 10 VDG Drain-Gate Voltage (V) 20

0 0.1 1 ID Drain Current (mA) 10

Output Characteristics
10 VGS(off) = 2 V 8 ID Drain Current (mA) ID Drain Current (mA) VGS = 0 V 6 0.2 V 0.4 V 4 0.6 V 0.8 V 2 1.0 V 1.2 V 1.4 V 0 2 4 6 8 10 12 15

Output Characteristics
VGS(off) = 3 V

VGS = 0 V 9 0.3 V 0.6 V 6 0.9 V 1.2 V 3 1.5 V 1.8 V

0 0 2 4 6 8 10 VDS Drain-Source Voltage (V)

VDS Drain-Source Voltage (V)

Transfer Characteristics
10 VGS(off) = 2 V 8 ID Drain Current (mA) ID Drain Current (mA) TA = 55_C 6 25_C VDS = 10 V 8 10

Transfer Characteristics
VGS(off) = 3 V VDS = 10 V

TA = 55_C 6 125_C 4 25_C

125_C

0 0 0.4 0.8 1.2 1.6 2 VGS Gate-Source Voltage (V)

0 0 0.6 1.2 1.8 2.4 3 VGS Gate-Source Voltage (V)

Document Number: 70238 S04028Rev. D ,04-Jun-01

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2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transconductance vs. Gate-Source Voltage
10 VGS(off) = 2 V gfs Forward Transconductance (mS) 8 TA = 55_C 6 25_C VDS = 10 V f = 1 kHz gfs Forward Transconductance (mS) 8 TA = 55_C 6 25_C 10 VGS(off) = 3 V VDS = 10 V f = 1 kHz

Transconductance vs. Gate-Source Voltgage

125_C

125_C

0 0 0.4 0.8 1.2 1.6 2 VGS Gate-Source Voltage (V)

0 0 0.6 1.2 1.8 2.4 3 VGS Gate-Source Voltage (V)

On-Resistance vs. Drain Current

300 rDS(on) Drain-Source On-Resistance ( ) TA = 55_C 240 AV Voltage Gain VGS(off) = 2 V 180 3 V 120 80 100

Circuit Voltage Gain vs. Drain Current

g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 10 V ID

60

VGS(off) = 2 V 40

60

20 3 V

0 0.1 1 ID Drain Current (mA) 10

0 0.1 1 ID Drain Current (mA) 10

Common-Source Input Capacitance vs. Gate-Source Voltage

5 Crss Reverse Feedback Capacitance (pF) f = 1 MHz 4 Ciss Input Capacitance (pF) 3.0

Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage

f = 1 MHz 2.4

VDS = 0 V

1.8

1.2

VDS = 0 V

VDS = 10 V

0.6

VDS = 10 V

0 0 4 8 12 16 20 VGS Gate-Source Voltage (V)

0 0 4 8 12 16 20 VGS Gate-Source Voltage (V)

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Document Number: 70238 S04028Rev. D ,04-Jun-01

2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Input Admittance
100 TA = 25_C VDS = 15 V VGS = 0 V Common Source 100

Forward Admittance
TA = 25_C VDS = 15 V VGS = 0 V Common Source

bis 10 gis

10 (mS) (mS)

gfs

bis 1

0.1 100

200

500

1000

0.1 100

200

500

1000

f Frequency (MHz)

f Frequency (MHz)

Reverse Admittance
10 TA = 25_C VDS = 15 V VGS = 0 V Common Source 10

Output Admittance
TA = 25_C VDS = 15 V VGS = 0 V Common Source

brs

bos

1 (mS) (mS)

1 gos

grs 0.1 0.1

0.01 100

200

500

1000

0.01 100

200

500

1000

f Frequency (MHz)

f Frequency (MHz)

Equivalent Input Noise Voltage vs. Frequency

20 VGS(off) = 3 V Hz 16 VDS = 10 V gos Output Conductance (mS) 16 20

Output Conductance vs. Drain Current

VGS(off) = 3 V VDS = 10 V f = 1 kHz

en Noise Voltage nV /

TA = 55_C 12 25_C 8 125_C 4

12

8 ID = 5 mA 4 ID = IDSS 0 10 100 1k f Frequency (Hz) 10 k 100 k

0 0.1

1 ID Drain Current (mA)

10

Document Number: 70238 S04028Rev. D ,04-Jun-01

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Vishay

Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 Revision: 18-Jul-08

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