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Before answering numerical exercises... REMEMBER: 1) Note the units in which you have to introduce your answer. They are always given in the exercise formulation. 2) You dont have to insert the units in the answer box. Just the number. 3) If you want to put decimals, use the period "." symbol. 4) Some of the answers involve powers of 10. For example, one exercise may ask you for the electron concentration in 104 cm3 . If your answer is, for example, 4.5
4.5 10
3

10

cm

, you will just need to insert in the answer box "4.5". If, on the other hand, your answer is

cm

, you will need to insert "0.45".

QUESTION 2.3.1 (0 points)

In case of p-doping of Si, the energy of the acceptor state: Help is located in the Si bandgap, relatively close to the conduction band. is located out of the Si bandgap, relatively close to the conduction band edge. is located in the Si bandgap, relatively close to the valence band. is located out of the Si bandgap, relatively close to the valence band edge.

EXPLANATION

The acceptor state traps an electron, so it can not be positioned in the conduction band. By trapping an electron, it generates a mobile hole. So the acceptor state is neither in the valence band. It has to be in the bandgap. By p-doping the holes (positive charge carriers) become the majority charge carriers, and therefore the energy of the acceptor state will be closer to the valence band than to the conduction band.

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QUESTION 2.3.2 (0 points)

A photon with energy Eph
= 1.35eV

is absorbed in a semiconductor creating one electron-hole pair. At the same time, the energy

lost due to thermal relaxation of the electron and hole is 0.27eV . What is the bandgap of the semiconductor (in eV )?

Answer: 1.08
EXPLANATION

Thermal relaxation means that the electron 'falls' down to an energy level at the bottom of the conduction band, wheres the hole 'moves' up to an energy level at the top of the valence band.

Therefore, the energy of the band gap is Egap

= Ephoton Erelaxation

= 1.35 0.27 = 1.08 eV

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QUESTION 2.3.3 (0 points)

Silicon is doped with 1016 arsenic atoms per cm3 . Assume intrinsic carrier concentration equal to 1.5 temperature. What is the minority carrier concentration at room temperature (T=300K) in 10
4

10

10

cm

at room

cm

Answer: 2.25
EXPLANATION

Arsenic has 5 valence band electrons, which means that it will provide free mobile electrons into the Si network (n-doping). Electrons are the majority charge carriers and holes are the minority charge carriers. Each arsenic atom will give one free electron, so the free electron concentration is n
= 10
16

cm

. Since the intrinstic carrier concentration is given, we can use the

law of mass action to get the free hole concentration

n
2 i

(1.510

10

p =

10

16

= 2.25 10

cm

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