THYRISTORS are strictly switching devices based on a PNPN structure.

They are used in ON-OFF systems, replacing relays and contactors. 2. HOLDING CURRENT (1 ) H is that value of current below which the SCR switches from the conduction state to the forward blocking region under stated conditions. 3. FORWARD AND REVERSE BLOCKING REGIONS are the regions corresponding to the open-circuit condition for the controlled rectifier which blocks the flow of charge (current) from anode to cathode. 4. REVERSE BREAKDOWN VOLTAGE is equivalent to the Zener or avalanche region of the fundamental two-layer semiconductor diode. COMMON RATING OF AN SCR 1. CURRENT RATINGS: ranges from 0.25 to several thousand amperes (rms) 2. VOLTAGE RATINGS: ranges upto 5,000V. 3. POWER GAIN: order of 10 million times (Available with microwatt pulses having ability to switch hundreds of watts) 4. TURN ON TIME: 1 microseconds 5. TURN OFF TIME: 10 to 20 microseconds. 6. I (current needed to fire an SCR) : 0.1 to 50 milliampere G 7. V (voltage between gate and cathode needed to fire an GK SCR) : 0.6 to 0.8 V; but always use 0.7V. 8. HOLDING CURRENT (I ): Approximately 10 HO milliampere 9. V (the anode to cathode voltage when SCR in ON) : TM typically 1.5 to 2V. FIVE WAYS TO TURNED ON AN SCR 1. BY AVALANCHE: when the anode is made much more positive than the cathode, forward breakover occurs and latched the device on. 2. BY RATE OF CHANGE: if the forward bias voltage across the device increases very quickly, a current will flow to charge the collector-base capacitance of the PNP transistor. This charge current represent base current for the NPN transistor and turns it ON. 3. BY HIGH TEMPERATURE: reversed-biased silicon junctions show a leakage current that approximately doubles for every 8C temperature rise. At some temperature, the leakage current will reach a level that latches the SCR ON. 4. BY TRANSISTOR ACTION: this is the normal mode of operation for all but light-sensitive thyristors. An external gate pulse or signal is used to switch on the NPN transistor and latch the SCR. 5. BY LIGHT ENERGY: light entering the junction area will release electron hole pairs and latches the SCR on. (This is for light activated SCR) SCR CHARACTERISTICS: 1. FORWARD BREAKOVER VOLTAGE (V * (BR)F is the voltage above which SCR enters the conduction region. The * is a letter to be added that is dependent on the condition of the terminal as follows: O = open circuit from G to K S = short circuit from G to K R = resistor from G to K V = fixed bias (voltage) for G to K

A. SCR (Silicon Controlled Rectifier) is a normally OFF device unilateral device they conduct in one direction only. three terminal power-control device. Three terminals of SCR: (1) Anode (A) (2) Cathode (K) (3) Gate (G) SCHEMATIC DIAGRAM OF SCR:

EQUIVALENT TWO-TRANSISTOR OF AN SCR

CHARACTERISTIC CURVE OF AN SCR

APPLICATION OF SCR: 1. SCR test circuit 2. gate control/triggering circuit 3. SCR power control circuit 4. AC circuit breaker using SCR

5. DC circuit breaker using SCR 6. zero voltage switching 7. over voltage protection circuit 8. SCR pulse circuit 9. Battery charging regulator

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