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2008
1. Revision
2008
Three configurations
PNP PNP PNP
IB
IE
IC
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2008
Minority Carrier
3
1 IBR
holes electrons
IE
IC
IEN
5 4
IBE IBR
Electron flux Hole flux and current
IB
Current components 1 = hole current lost due to recombination in base, IBR 2 = hole current collected by collector, ~ IC 1 + 2 = hole part of emitter current, IEP 5 = electrons injected across forward biased E-B junction, ( IBE); same as electron part of emitter current, IEN 4 = electron supplied by base contact for recombination with holes lost, IBR (= 1) 3 = thermally generated e & h making up reverse saturation current of reverse biased C-B junction. (generally neglected)
2008
= ICmajority + ICOminority
Leakage component
2008
3. Transistor Alpha
2008
dc 0.90 to 0.998
Leakage component
IC = dc IE + ICB0 ..(2)
2008
Alpha ac (Common means small base short circuit change in amplification factor) ac= IC IE = IC .. (1) IE VCB = constant ac dc 0.90 to 0.998 IC = dc IE + ICB0 ..(2)
Leakage component
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Emitter characteristics (input Characteristics) of basebase-emitter region amplifier in the dc mode Common base
IE (mA) Active Region Active Region IE VBE 0.7 V VBE (V)
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VBE (V)
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Active region VBE 0.7 v VBE Active 0.7 v region VBE 0.7 v VBE VBE 0.7 v 0.7 v Saturation region VBE OR << 0.7 V
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and IE
IC
IE
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VEE
VCC IB = 0 mA
VEE IB = 0 mA
VCC
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Input i
iinput
= vinput / Ri = 20 mV = 1 mA 20
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Current iinput transfers from a low Ri circuit to high Ro circuit ac = 1, iC = iE iL = iinput = 1 mA vL = IL. R = 1 mA. 5 k = 5 V Voltage Amplification = vL/vinput = 5 V 20 mV = 250 Generally 50 to 300
2008 Junction Transistor Lesson 6- " , Raj Kamal, 18
2008
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BaseBase -emitter region amplifier in the dc mode Input Characteristics (also base characteristics) in common emitter amplifier
IB (A) VCE = 1V VCE = 10V VCE = 20V Active Region VBE (V)
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and IB
Leakage current
= IC IE IC = IE + ICB0
IC = ( IC + IB ) + ICB0 (1 ) IC = IB + ICB0 IC = /(1 ) IB + ICB0 /(1 ) = Current gain = [IC / IB] at constant VCE
2008 Junction Transistor Lesson 6- " , Raj Kamal, 24
ICEO
If = 0.996 then when at IB at 0 A IC = 0.996/(0.004) . 0 A + ICB0 /(0.004) = ICB0 /(0.004) = 250 ICB0 IC / ICB0 = 250 at IB = 0 ICEO = ICBO / (1 - ) at IB = 0
For linear very small distortion amplifier cut-off for common emitter configuration is at IC = ICEO
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IC RC
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BaseBase -collector region amplifier in the dc mode Input Characteristics (also collector characteristics) in common collector amplifier
IC (mA) VEC = 1V VEC = 10V VEC = 20V Active Region VBC (V)
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IE
Saturation region
Cut-off region
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and IE
Leakage current
= IE IC IE = IC/ + IEC0
ICEO
For linear very small distortion amplifier cut-off for common collector configuration is at IE = IC + IECEO
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IC
IC RC
7. Transistor Beta
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dc 50 to 400 range
Leakage component
IC = dc IB + ICE0 ..(2)
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Beta ac (Common means small emitter forward current open circuit change in amplification factor) ac= IC IB = IC .. (1) IB VCE = constant ac dc 50 to 400 IC = dc IB + ICE0 ..(2) Related to hFE
2008 Junction Transistor Lesson 6- " , Raj Kamal, 36
Leakage component
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= IC + IB IC / = IC + IC /
= / ( + 1)
1/ = 1 + 1 / ; = / (1 ) IC = I B
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IE = IB ( + 1)
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= ICB0 / (1 )
1/ = 1 + 1 / ; + 1= 1/ (1 ) ICE0 ICB0
2008 Junction Transistor Lesson 6- " , Raj Kamal, 39
Summary
We learnt
Current components in a transistor Input and output circuit characteristics in Three configurations- Common base, common emitter and Common collector Alfa dc and alpha ac Beta and beta ac
Junction Transistor Lesson 6- " , Raj Kamal, 40
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End of Lesson 6
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