2N4416/2N4416A/SST4416

Vishay Siliconix

N-Channel JFETs

PRODUCT SUMMARY
Part Number
2N4416 2N4416A SST4416

VGS(off) (V)
v6 2.5 to 6 v6

V(BR)GSS Min (V)

30 35 30

gfs Min (mS)

4.5 4.5 4.5

IDSS Min (mA)

5 5 5

FEATURES
D Excellent High-Frequency Gain: 2N4416/A, Gps 13 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High AC/DC Switch Off-Isolation

BENEFITS
D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification

APPLICATIONS
D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches

DESCRIPTION
The 2N4416/2N4416A/SST4416 n-channel JFETs are designed to provide high-performance amplification at high frequencies. The TO-206AF (TO-72) hermetically-sealed package is available with full military processing (see Military Information.) The TO-236 (SOT-23) package provides a low-cost option and is available with tape-and-reel options (see Packaging Information). For similar products in the TO-226AA (TO-92) package, see the J304/305 data sheet.

TO-206AF (TO-72) TO-236 (SOT-23)

S 1 4 C D 1 3 S 2 D Top View 2N4416 2N4416A 3 G 2 G

Top View SST4416 (H1)* *Marking Code for TO-236

For applications information see AN104. Document Number: 70242 S-50147Rev. H, 24-Jan-05 www.vishay.com

2N4416/2N4416A/SST4416
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage : (2N/SST4416) . . . . . . . . . . . . . . . . . . . . . 30 V (2N4416A) . . . . . . . . . . . . . . . . . . . . . . . . . 35 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . 65 to 200 _C (SST Prefix) . . . . . . . . . . . . . . . . . 65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150 _C Power Dissipation : (2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW (SST Prefix)b . . . . . . . . . . . . . . . . . . . . 350 mW

Notes a. Derate 2.4 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TA = 25_C UNLESS NOTED)

Limits
2N4416 2N4416A SST4416

Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb

Symbol

Test Conditions

Typa

Min

Max

Min

Max

Min

Max

Unit

V(BR)GSS VGS(off) IDSS

IG = 1 mA , VDS = 0 V VDS = 15 V, ID = 1 nA VDS = 15 V, VGS = 0 V VGS = 20 V, VDS = 0 V (2N) TA = 150_C VGS = 15 V, VDS = 0 V (SST) TA = 125_C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = 6 V VGS = 0 V, ID = 300 mA IG = 1 mA , VDS = 0 V

36 3 10 2 4 0.002 0.6 20 2 150 0.7

30 6 5 15 100 100

35 2.5 5 6 15 100 100

30 6 5 15

V mA pA 1 nA

Gate Reverse Current

IGSS

Gate Operating Current Drain Cutoff Currentc Drain-Source On-Resistancec Gate-Source Forward Voltagec

IG ID(off) rDS(on) VGS(F)

pA W V

Dynamic
Common-Source Forward Transconductanceb Common-Source Output Conductanceb Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltagec gfs gos Ciss Crss Coss en VDS = 10 V, VGS = 0 V f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 15 V, VGS = 0 V f = 1 kHz 6 15 2.2 0.7 1 6 4.5 7.5 50 4 0.8 2 4.5 7.5 50 4 0.8 2 nV Hz pF 4.5 7.5 50 mS mS

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Document Number: 70242 S-50147Rev. H, 24-Jan-05

2N4416/2N4416A/SST4416
Vishay Siliconix
HIGH-FREQUENCY SPECIFICATIONS FOR 2N4416/2N4416A (TA = 25_C UNLESS NOTED)
Limits
100 MHz 400 MHz

Parameter
Common Source Input Conductanced Common Source Input Susceptanced Common Source Output Conductanced Common Source Output Susceptanced Common Source Forward Transconductanced Common-Source Power Gaind Noise Figured

Symbol
giss biss goss boss gfs Gps NF

Test Conditions

Min

Max
100 2,500

Min

Max
1,000 10,000 100 4,000

Unit

VDS = 15 V, VGS = 0 V

75 1,000 4,000

mS

VDS = 15 V, ID = 5 mA RG = 1 kW

18 2

10 4

dB NH

Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC. d. Not a production test.

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
20 IDSS Saturation Drain Current (mA)

10 rDS(on) Drain-Source On-Resistance ( ) gfs Forward Transconductance (mS)

On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage

500 gos @ VDS = 10 V, VGS = 0 V f = 1 kHz

100

rDS @ ID = 300 mA, VGS = 0 V

80 gos Output conductance (S)

16

IDSS

400

12

gfs

300

rDS gos

60

200

40

IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 2 4 6 8 VGS(off) Gate-Source Cutoff Voltage (V) 10

100

20

0 0 4 6 8 VGS(off) Gate-Source Cutoff Voltage (V) 2 10

Output Characteristics
10 VGS(off) = 2 V 8 ID Drain Current (mA) ID Drain Current (mA) VGS = 0 V 6 0.2 V 0.4 V 4 0.6 V 0.8 V 2 1.0 V 1.2 V 1.4 V 2 4 6 8 VDS Drain-Source Voltage (V) 12 15

Output Characteristics
VGS(off) = 3 V

VGS = 0 V 9 0.3 V 0.6 V 6 0.9 V 1.2 V 3 1.5 V 1.8 V

10

4 6 8 VDS Drain-Source Voltage (V)

10

Document Number: 70242 S-50147Rev. H, 24-Jan-05

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2N4416/2N4416A/SST4416
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
5

Output Characteristics
VGS(off) = 2 V

Output Characteristics
VGS(off) = 3 V VGS = 0 V

4 ID Drain Current (mA)

VGS = 0 V 0.2 V ID Drain Current (mA) 0.4 V 0.6 V

0.3 V 0.6 V 0.9 V 1.2 V 1.5 V

0.8 V 1.0 V

2 1.8 V 1 2.1 V

1.2 V 1.4 V

0 0 0.2 0.4 0.6 0.8 1.0 VDS Drain-Source Voltage (V)

0 0 0.2 0.4 0.6 0.8 1.0 VDS Drain-Source Voltage (V)

Transfer Characteristics
10 VGS(off) = 2 V 8 ID Drain Current (mA) ID Drain Current (mA) TA = 55_C 6 25_C VDS = 10 V 8 10

Transfer Characteristics
VGS(off) = 3 V VDS = 10 V

TA = 55_C 6 25_C

125_C

125_C

0 0 0.4 0.8 1.2 1.6 2 VGS Gate-Source Voltage (V)

0 0 0.6 1.2 1.8 2.4 3 VGS Gate-Source Voltage (V)

Transconductance vs. Gate-Source Voltage

10 VGS(off) = 2 V gfs Forward Transconductance (mS) 8 TA = 55_C 6 25_C VDS = 10 V f = 1 kHz gfs Forward Transconductance (mS) 8 10

Transconductance vs. Gate-Source Voltgage

VGS(off) = 3 V VDS = 10 V f = 1 kHz

TA = 55_C 6 25_C

125_C

125_C

0 0 0.4 0.8 1.2 1.6 2 VGS Gate-Source Voltage (V)

0 0 0.6 1.2 1.8 2.4 3 VGS Gate-Source Voltage (V)

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Document Number: 70242 S-50147Rev. H, 24-Jan-05

2N4416/2N4416A/SST4416
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

On-Resistance vs. Drain Current

300 rDS(on) Drain-Source On-Resistance ( ) TA = 25_C 240 AV Voltage Gain VGS(off) = 2 V 180 3 V 120 80 100

Circuit Voltage Gain vs. Drain Current

g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 10 V ID

60

40

VGS(off) = 2 V

60

20 3 V

0 0.1

ID Drain Current (mA) 1

10

0.1

ID Drain Current (mA) 1

10

Common-Source Input Capacitance vs. Gate-Source Voltage

5 Crss Reverse Feedback Capacitance (pF) f = 1 MHz 4 Ciss Input Capacitance (pF) 3

Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage

f = 1 MHz 2.4

3 VDS = 0 V 2 10 V

1.8 VDS = 0 V

1.2

0.6

10 V

0 0 4 8 12 16 VGS Gate-Source Voltage (V) 20

0 0 4 8 12 16 VGS Gate-Source Voltage (V) 20

100

Input Admittance
TA = 25_C VDS = 15 V VGS = 0 V Common Source bis

100

Forward Admittance
TA = 25_C VDS = 15 V VGS = 0 V Common Source

10 (mS)

gis (mS)

10

gfs bfs

0.1 100

200

500

1000

0.1 100

200

500

1000

f Frequency (MHz)

f Frequency (MHz)

Document Number: 70242 S-50147Rev. H, 24-Jan-05

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2N4416/2N4416A/SST4416
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Reverse Admittance
10 TA = 25_C VDS = 15 V VGS = 0 V Common Source 1 (mS) (mS) brs 10

Output Admittance
bos

1 gos

grs 0.1 0.1 TA = 25_C VDS = 15 V VGS = 0 V Common Source 0.01 100 0.01 200 500 f Frequency (MHz) 1000 100 200 500 f Frequency (MHz) 1000

100 nA 10 nA 1 nA 100 pA

Gate Leakage Current

IG @ ID = 5 mA 1 mA 0.1 mA gfs Forward Transconductance (mS)

10

Common-Source Forward Transconductance vs. Drain Current

VGS(off) = 3 V VDS = 10 V f = 1 kHz

8 TA = 55_C

IG Gate Leakage

TA = 125_C IGSS @ 125_C 1 mA TA = 25_C 0.1 mA IGSS @ 25_C

6 25_C 4

5 mA 10 pA 1 pA 0.1 pA 0 4

125_C 2

0 8 12 16 VDG Drain-Gate Voltage (V) 20 0.1 1 ID Drain Current (mA) 10

20

Equivalent Input Noise Voltage vs. Frequency

VDS = 10 V

20

Output Conductance vs. Drain Current

VGS(off) = 3 V VDS = 10 V f = 1 kHz

16 Hz

gos Output Conductance (S)

16 TA = 55_C 12 25_C 125_C 4

en Noise Voltage nV /

12

8 ID = 5 mA VGS = 0 V 0 10 100 1k f Frequency (Hz) 10 k 100 k

0 0.1 1 ID Drain Current (mA) 10

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70242. www.vishay.com Document Number: 70242 S-50147Rev. H, 24-Jan-05

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