UNISONIC TECHNOLOGIES CO.

, LTD 20N40
Preliminary Power MOSFET

400V, 23A N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 20N40 is an N-channel mode power MOSFET using UTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 20N40 is generally applied in high efficiency switch mode power supplies.

FEATURES

* RDS(ON)=0.2 @ VGS=10V,ID=11.5A * Low Gate Charge (Typical 46nC) * Low CRSS (Typical 25pF) * High Switching Speed

SYMBOL

ORDERING INFORMATION
Package TO-247 Pin Assignment 1 2 3 G D S Packing Tube

Ordering Number Lead Free Halogen Free 20N40L-T47-T 20N40G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source

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PARAMETER Drain-Source Voltage Gate-Source Voltage

Preliminary
SYMBOL VDSS VGSS

Power MOSFET
UNIT V V A A A A mJ mJ V/ns W W/C C C damaged.

ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise specified)

RATINGS 400 30 TC=25C 23 ID Continuous Drain Current TC=100C 13.8 Pulsed (Note 2) IDM 92 Avalanche Current (Note 2) IAR 23 Single Pulsed (Note 3) EAS 1190 Avalanche Energy Repetitive (Note 2) EAR 23.5 Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 Power Dissipation (TC=25C) 235 PD Derate above 25C 1.8 Junction Temperature TJ +150 Storage Temperature TSTG -55~+150 Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 4.5mH, IAS = 23A, VDD = 50V, RG = 25, Starting TJ = 25C 4. ISD 23A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C

THERMAL DATA
SYMBOL JA JC RATINGS 40 0.53 UNIT C/W C/W

PARAMETER Junction to Ambient Junction to Case

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www.unisonic.com.tw

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Preliminary

Power MOSFET

ELECTRICAL CHARACTERISTICS
MIN TYP MAX UNIT 400 0.5 V V/C 10 A +100 nA -100 nA 4.0 0.2 V pF pF pF nC nC nC ns ns ns ns A A V ns C

PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250A, VGS=0V Breakdown Voltage Temperature Coefficient BVDSS/TJ Reference to 25C, ID=250A Drain-Source Leakage Current IDSS VDS=400V, VGS=0V Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250A Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=11.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge at 10V QG(TOT) VDS=320V, ID=23A (Note 1, 2) Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDS=200V, ID=23A, RG=25 Rise Time tR (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD ISD=23A, VGS=0V ISD=23A, VGS=0V, Body Diode Reverse Recovery Time trr dIF/dt=100A/s (Note 1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width 300s, Duty cycle 2% 2. Essentially Independent of Operating Temperature Typical Characteristics

2.0 0.15

2280 3030 370 490 25 38 46 13 18 40 92 120 75 60

90 195 250 160 23 92 1.5

110 0.3

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D.U.T.

Preliminary

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

+ VDS + L

RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD

Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period

VGS= 10V

IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt

Body Diode Recovery dv/dt VDS (D.U.T.) VDD

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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www.unisonic.com.tw

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Preliminary

Power MOSFET

TEST CIRCUITS AND WAVEFORMS (Cont.)

VDS

90%

VGS

10%
tD(ON) tR tD(OFF) tF

Switching Test Circuit

Switching Waveforms

VGS QG

10V QGS

QGD

Charge

Gate Charge Test Circuit

Gate Charge Waveform

BVDSS IAS

ID(t) VDD

VDS(t)

tp

Time

Unclamped Inductive Switching Test Circuit

Unclamped Inductive Switching Waveforms

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www.unisonic.com.tw

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Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

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www.unisonic.com.tw

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