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SFH6156 www.vishay.com Vishay Semiconductors
SFH6156
www.vishay.com
Vishay Semiconductors

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS

17448-5 1
17448-5
1
A 1 4 C 2 3 17448-3 V D E
A
1 4
C
2 3
17448-3
V
D E

C

E

DESCRIPTION

The SFH6156 features a variety of transfer ratios, low coupling capacitance and high isolation voltage. This coupler has a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic SMD package.

The coupling devices are designed for signal transmission between two electrically separated circuits.

The coupler is end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of > 8 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE0805) for reinforced insulation up to an operation voltage of 400 V RMS or DC. Specifications subject to change.

FEATURES

• Excellent CTR linearity depending on forward current

• Isolation test voltage, 5300 V RMS

• Fast switching times

• Low CTR degradation

• Low coupling capacitance

• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • Switchmode power supply • Telecom •

APPLICATIONS

• Switchmode power supply

• Telecom

• Battery powered equipment

AGENCY APPROVALS

• UL1577, file no. E52744 system code H or J, double protection

• DIN EN 60747-5-5 (VDE0884) available with option 1

ORDERING INFORMATION

ORDERING INFORMATION
ORDERING INFORMATION

SFH6156##

-X001T

SMD-4

PART NUMBER

CTR

PACKAGE OPTION

TAPE

BIN

AND

 

REEL

> 8 mm

AGENCY CERTIFIED/PACKAGE

CTR (%)

10 mA

UL, cUL, BSI 40 to 80 SMD-4, 100 mil, pitch VDE, UL, cUL, BSI SMD-4,
UL, cUL, BSI 40 to 80 SMD-4, 100 mil, pitch VDE, UL, cUL, BSI SMD-4,
UL, cUL, BSI 40 to 80 SMD-4, 100 mil, pitch VDE, UL, cUL, BSI SMD-4,
UL, cUL, BSI 40 to 80 SMD-4, 100 mil, pitch VDE, UL, cUL, BSI SMD-4,
UL, cUL, BSI 40 to 80 SMD-4, 100 mil, pitch VDE, UL, cUL, BSI SMD-4,

UL, cUL, BSI

40 to 80

SMD-4, 100 mil, pitch

VDE, UL, cUL, BSI

SMD-4, 100 mil, pitch

SFH6156-1

SFH6156-1T

40 to 80

SFH6156-1X001

SFH6156-1X001T

pitch VDE, UL, cUL, BSI SMD-4, 100 mil, pitch SFH6156-1 SFH6156-1T 40 to 80 SFH6156-1X001 SFH6156-1X001T
pitch VDE, UL, cUL, BSI SMD-4, 100 mil, pitch SFH6156-1 SFH6156-1T 40 to 80 SFH6156-1X001 SFH6156-1X001T
63 to 125 100 to 200 SFH6156-2 SFH6156-3 SFH6156-2T SFH6156-3T 63 to 125 100 to
63 to 125
100 to 200
SFH6156-2
SFH6156-3
SFH6156-2T
SFH6156-3T
63 to 125
100 to 200
SFH6156-2X001
-
SFH6156-2X001T

Rev. 2.3, 25-Oct-11

1

For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 83671

P tot - Power Dissipation (mW)

SFH6156 www.vishay.com Vishay Semiconductors
SFH6156
www.vishay.com
Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

INPUT Reverse voltage DC forward current Surge forward current t p ≤ 10 μs V R
Reverse voltage DC forward current Surge forward current t p ≤ 10 μs V R

Reverse voltage

DC forward current

Surge forward current

Reverse voltage DC forward current Surge forward current t p ≤ 10 μs V R I

t p 10 μs

V R

I F

I FSM

t p ≤ 10 μs V R I F I FSM 6 V 60 mA 2.5
t p ≤ 10 μs V R I F I FSM 6 V 60 mA 2.5

6

V

60

mA

2.5

A

t p ≤ 10 μs V R I F I FSM 6 V 60 mA 2.5
t p ≤ 10 μs V R I F I FSM 6 V 60 mA 2.5
t p ≤ 10 μs V R I F I FSM 6 V 60 mA 2.5
t p ≤ 10 μs V R I F I FSM 6 V 60 mA 2.5
current Surge forward current t p ≤ 10 μs V R I F I FSM 6

OUTPUT

OUTPUT Collector emitter voltage Emitter collector voltage Collector current t p ≤ 1 ms V CEO
Collector emitter voltage Emitter collector voltage Collector current t p ≤ 1 ms

Collector emitter voltage

Emitter collector voltage

Collector current

Collector emitter voltage Emitter collector voltage Collector current t p ≤ 1 ms

t p 1 ms

Collector emitter voltage Emitter collector voltage Collector current t p ≤ 1 ms
Collector emitter voltage Emitter collector voltage Collector current t p ≤ 1 ms
Collector emitter voltage Emitter collector voltage Collector current t p ≤ 1 ms

V CEO

70

V

V ECO

7

V

I C

I C

mA

100 mA

50

COUPLER

COUPLER Isolation test voltage between emitter and detector t = 1 s V ISO 5300 V

Isolation test voltage between emitter and detector

t = 1 s

V

ISO

5300

V

RMS

Creepage distance

   

7

mm

Clearance distance

   

7

mm

Insulation thickness between emitter and detector

   

0.4

mm

Comparative tracking index per DIN IEC112/VDE0303 part 1

 

CTI

175

 

Isolation resistance

V IO = 500 V, T amb = 25 °C

V IO = 500 V, T amb = 100 °C

R

R

IO

IO

10 12

10 11

Ω

Ω

Storage temperature range

 

T

stg

-

55 to + 150

°C

Ambient temperature range

 

T

amb

-

55 to +100

°C

Soldering temperature (1)

max. 10 s, dip soldering distance to seating plane 1.5 mm

T

sld

260

°C

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD).

200

150

100

50

0

Diode
Diode
Diode
Diode
Diode

Phototransistor

Diode Phototransistor
Diode Phototransistor
Diode Phototransistor
Diode Phototransistor

0

25

50

75

100

125

150

18483 T amb - Ambient Temperature (°C)

Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature

Rev. 2.3, 25-Oct-11

2

For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 83671

SFH6156 www.vishay.com Vishay Semiconductors
SFH6156
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Vishay Semiconductors
THERMAL CHARACTERISTICS Thermal resistance, case to ambient ( 1 ) θ CA SYMBOL PARAMETER LED

THERMAL CHARACTERISTICS

THERMAL CHARACTERISTICS

Thermal resistance, case to ambient (1)

θ CA

SYMBOL

PARAMETER

LED power dissipation

P diss

SYMBOL PARAMETER LED power dissipation P diss
CA SYMBOL PARAMETER LED power dissipation P diss Output power dissipation Maximum LED junction temperature

Output power dissipation

Maximum LED junction temperature

P diss

T jmax.

Maximum output die junction temperature

T jmax.

Thermal resistance, junction emitter to board

θ EB

Thermal resistance, junction emitter to case

θ EC

Thermal resistance, junction detector to board

θ DB

Thermal resistance, junction detector to case

θ DC

Thermal resistance, junction emitter to junction detector

θ ED

Thermal resistance, board to ambient (1)

θ BA

VALUE

UNIT

100

mW

150

mW

125

°C

125

°C

173

°C/W

149

°C/W

111

°C/W

127

°C/W

95

°C/W

195

°C/W

3573

°C/W

T A θ CA θ BA T A
T
A
θ
CA
θ
BA
T
A

T JD

θ DC

θ DB

T

C

θ

T

B

DE

Package

θ EC

θ EB

T JE

19996

Notes

• The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s thermal characteristics of optocouplers application note. (1) For 2 layer FR4 board (4" x 3" x 0.062")

ELECTRICAL CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT

Forward voltage

I F = 60 mA

V

F

1.25

1.65

V

Reverse current

V R = 6 V

I

R

0.01

10

μA

Capacitance

V R = 0 V, f = 1 MHz

C

O

13

 

pF

OUTPUT

R = 6 V I R 0.01 10 μA Capacitance V R = 0 V, f
Collector emitter capacitance Collector emitter leakage current

Collector emitter capacitance

Collector emitter leakage current

V CE = 5 V, f = 1 MHz

V CE = 10 V

SFH6156-1

SFH6156-2

SFH6156-3

SFH6156-1 SFH6156-2 SFH6156-3 SFH6156-4 C CE pF 5.2 2 2 5 5 I CEO I CEO
SFH6156-1 SFH6156-2 SFH6156-3 SFH6156-4 C CE pF 5.2 2 2 5 5 I CEO I CEO

SFH6156-4

C CE

pF

SFH6156-1 SFH6156-2 SFH6156-3 SFH6156-4 C CE pF 5.2 2 2 5 5 I CEO I CEO
SFH6156-1 SFH6156-2 SFH6156-3 SFH6156-4 C CE pF 5.2 2 2 5 5 I CEO I CEO

5.2

2

2

5

5

SFH6156-3 SFH6156-4 C CE pF 5.2 2 2 5 5 I CEO I CEO I CEO
SFH6156-3 SFH6156-4 C CE pF 5.2 2 2 5 5 I CEO I CEO I CEO

I CEO

I CEO

I CEO

I CEO

50

nA

50

nA

100

nA

100

nA

COUPLER

5.2 2 2 5 5 I CEO I CEO I CEO I CEO 50 nA 50

Collector emitter saturation voltage

I F = 10 mA, I C = 2.5 mA

V

CEsat

0.25

0.4

V

Coupling capacitance

   

C

C

0.4

 

pF

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Rev. 2.3, 25-Oct-11

3

For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 83671

SFH6156 www.vishay.com Vishay Semiconductors
SFH6156
www.vishay.com
Vishay Semiconductors

CURRENT TRANSFER RATIO

CURRENT TRANSFER RATIO PARAMETER TEST CONDITION I C /I F I F = 10 mA, V
CURRENT TRANSFER RATIO PARAMETER TEST CONDITION I C /I F I F = 10 mA, V

PARAMETER

TEST CONDITION

I

C /I F

I F = 10 mA, V CE = 5 V

I F = 1 mA, V CE = 5 V

= 10 mA, V C E = 5 V I F = 1 mA, V C
PART SYMBOL MIN. SFH6156-1 CTR 40 SFH6156-2 CTR 63 SFH6156-3 CTR 100 SFH6156-4
PART SYMBOL MIN. SFH6156-1 CTR 40 SFH6156-2 CTR 63 SFH6156-3 CTR 100 SFH6156-4

PART

SYMBOL

MIN.

SFH6156-1

CTR

40

SFH6156-2

CTR

63

MIN. SFH6156-1 CTR 40 SFH6156-2 CTR 63 SFH6156-3 CTR 100 SFH6156-4 CTR 160

SFH6156-3

CTR

100

SFH6156-4

CTR

160

SFH6156-1

CTR

13

SFH6156-2

CTR

22

SFH6156-3

CTR

34

SFH6156-4

CTR

56

22 SFH6156-3 CTR 34 SFH6156-4 CTR 56 TYP. MAX. UNIT 80 % 125 %   200
22 SFH6156-3 CTR 34 SFH6156-4 CTR 56 TYP. MAX. UNIT 80 % 125 %   200
22 SFH6156-3 CTR 34 SFH6156-4 CTR 56 TYP. MAX. UNIT 80 % 125 %   200

TYP.

MAX.

UNIT

80

%

125

%

CTR 56 TYP. MAX. UNIT 80 % 125 %   200 % 320 % 30 %
CTR 56 TYP. MAX. UNIT 80 % 125 %   200 % 320 % 30 %
 

200

%

320

%

30

%

45

%

70

%

90

%

  200 % 320 % 30 % 45 % 70 % 90 %

SWITCHING CHARACTERISTICS

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

NON-SATURATED

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT NON-SATURATED

Rise time

Fall time

Turn-on time

Turn-off time

Cut-off frequency

I F = 10 mA, V CC = 5 V, T A = 25 °C, R L = 75 Ω

I F = 10 mA, V CC = 5 V, T A = 25 °C, R L = 75 Ω

I F = 10 mA, V CC = 5 V, T A = 25 °C, R L = 75 Ω

I F = 10 mA, V CC = 5 V, T A = 25 °C, R L = 75 Ω

I F = 10 mA, V CC = 5 V, T A = 25 °C, R L = 75 Ω

t r t f

t r

t f

t r t f t on t off f ctr

t on

t off

f ctr

t r t f t on t off f ctr
t r t f t on t off f ctr
t r t f t on t off f ctr 2 μs 2 μs 3 μs
t r t f t on t off f ctr 2 μs 2 μs 3 μs
t r t f t on t off f ctr 2 μs 2 μs 3 μs

2

μs

2

μs

3

μs

2.3

μs

t r t f t on t off f ctr 2 μs 2 μs 3 μs
t r t f t on t off f ctr 2 μs 2 μs 3 μs

250

kHz

SATURATED

r t f t on t off f ctr 2 μs 2 μs 3 μs 2.3
Rise time Fall time Turn-on time Turn-off time V CC = 5 V, T A
Rise time Fall time Turn-on time Turn-off time V CC = 5 V, T A

Rise time

Fall time

Turn-on time

Turn-off time

V CC = 5 V, T A = 25 °C, R L = 1 kΩ,
V CC = 5 V, T A = 25 °C, R L = 1 kΩ, I F = 20 mA
SFH6156-1
t r
2
SFH6156-2
t r
3
V CC = 5 V, T A = 25 °C, R L = 1 kΩ, I F = 10 mA
SFH6156-3
t r
3
V CC = 5 V, T A = 25 °C, R L = 1 kΩ, I F = 5 mA
SFH6156-4
t r
4
V CC = 5 V, T A = 25 °C, R L = 1 kΩ, I F = 20 mA
SFH6156-1
11
= 5 V, T A = 25 °C, R L = 1 kΩ, I F =
= 5 V, T A = 25 °C, R L = 1 kΩ, I F =
SFH6156-2 14 V CC = 5 V, T A = 25 °C, R L =
SFH6156-2
14
V CC = 5 V, T A = 25 °C, R L = 1 kΩ, I F = 10 mA
SFH6156-3
14
V CC = 5 V, T A = 25 °C, R L = 1 kΩ, I F = 5 mA
SFH6156-4
15
V CC = 5 V, T A = 25 °C, R L = 1 kΩ, I F = 20 mA
SFH6156-1
3
SFH6156-2
4.2
V CC = 5 V, T A = 25 °C, R L = 1 kΩ, I F = 10 mA
SFH6156-3
4.2
V CC = 5 V, T A = 25 °C, R L = 1 kΩ, I F = 5 mA
SFH6156-4
6
V CC = 5 V, T A = 25 °C, R L = 1 kΩ, I F = 20 mA
SFH6156-1
18
SFH6156-2
23
V CC = 5 V, T A = 25 °C, R L = 1 kΩ, I F = 10 mA
SFH6156-3
23
V CC = 5 V, T A = 25 °C, R L = 1 kΩ, I F = 5 mA
SFH6156-4
25
μs μs μs μs t μs f t μs f t μs f t μs
μs
μs
μs
μs
t
μs
f
t
μs
f
t
μs
f
t
μs
f
t
μs
on
t
μs
on
t
μs
on
t
μs
on
t
μs
off
t
μs
off
t
μs
off
t
μs
off

SAFETY AND INSULATION RATINGS

PARAMETER Climatic classification (according to IEC 68 part 1) Comparative tracking index V IOTM V
PARAMETER Climatic classification (according to IEC 68 part 1) Comparative tracking index V IOTM V
PARAMETER Climatic classification (according to IEC 68 part 1) Comparative tracking index V IOTM V
PARAMETER Climatic classification (according to IEC 68 part 1) Comparative tracking index V IOTM V
PARAMETER Climatic classification (according to IEC 68 part 1) Comparative tracking index V IOTM V
PARAMETER Climatic classification (according to IEC 68 part 1) Comparative tracking index V IOTM V
PARAMETER Climatic classification (according to IEC 68 part 1) Comparative tracking index V IOTM V
PARAMETER
Climatic classification (according to IEC 68 part 1)
Comparative tracking index
V
IOTM
V
IORM
P
SO
I SI
T SI
Creepage distance
Clearance distance
Insulation thickness, reinforced rated

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

 

55/100/21

 

CTI

175

399

 

10 000

V

peak

890

V

peak

 

400

mW

275

mA

175

°C

 

7

mm

7

mm

per IEC 60950 2.10.5.1

0.4

mm

  400 mW 275 mA 175 °C   7 mm 7 mm per IEC 60950 2.10.5.1
  400 mW 275 mA 175 °C   7 mm 7 mm per IEC 60950 2.10.5.1
  400 mW 275 mA 175 °C   7 mm 7 mm per IEC 60950 2.10.5.1
  400 mW 275 mA 175 °C   7 mm 7 mm per IEC 60950 2.10.5.1
  400 mW 275 mA 175 °C   7 mm 7 mm per IEC 60950 2.10.5.1
  400 mW 275 mA 175 °C   7 mm 7 mm per IEC 60950 2.10.5.1

Note

• As per IEC 60747-5-5, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits.

Rev. 2.3, 25-Oct-11

4

For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 83671

I C (mA)

V F (V)

I I C (%)

C (pF)

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TYPICAL CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)

= 75 Ω I F R L I C
= 75 Ω
I F
R L
I C

47 Ω

isfh615a_01

V CC =5V

Fig. 2 - Linear Operation (without Saturation)

1 Ω I F
1 Ω
I F

47 Ω

isfh615a_02

V CC =5V

Fig. 3 - Switching Operation (with Saturation)

10

3

5

10

2

5

10

1

I F = 10 mA, V CE = 5 V 4 3   2 1
I F = 10 mA, V CE = 5 V 4 3   2 1
I F = 10 mA, V CE = 5 V 4 3   2 1
I F = 10 mA, V CE = 5 V 4 3   2 1
I F = 10 mA, V CE = 5 V 4 3   2 1
I F = 10 mA, V CE = 5 V 4 3   2 1
I F = 10 mA, V CE = 5 V 4 3   2 1
I F = 10 mA, V CE = 5 V 4 3   2 1
I F = 10

I F = 10

mA,

V CE

=

5 V

4

3

 

2

I F = 10 mA, V CE = 5 V 4 3   2
I F = 10 mA, V CE = 5 V 4 3   2
I F = 10 mA, V CE = 5 V 4 3   2
I F = 10 mA, V CE = 5 V 4 3   2
I F = 10 mA, V CE = 5 V 4 3   2 1
I F = 10 mA, V CE = 5 V 4 3   2 1
I F = 10 mA, V CE = 5 V 4 3   2 1
I F = 10 mA, V CE = 5 V 4 3   2 1
I F = 10 mA, V CE = 5 V 4 3   2 1

1

I F = 10 mA, V CE = 5 V 4 3   2 1
I F = 10 mA, V CE = 5 V 4 3   2 1
I F = 10 mA, V CE = 5 V 4 3   2 1
I F = 10 mA, V CE = 5 V 4 3   2 1
I F = 10 mA, V CE = 5 V 4 3   2 1

- 25

isfh615a_03

0

25

T A (°C)

50

75

Fig. 4 - Current Transfer Ratio (Typ.) vs. Temperature

30

  12 10 8 6 1 mA 2
 

12

10

8

6

1 mA

2

  12 10 8 6 1 mA 2 mA mA mA mA 4 mA mA I
  12 10 8 6 1 mA 2 mA mA mA mA 4 mA mA I
  12 10 8 6 1 mA 2 mA mA mA mA 4 mA mA I
  12 10 8 6 1 mA 2 mA mA mA mA 4 mA mA I
  12 10 8 6 1 mA 2 mA mA mA mA 4 mA mA I
  12 10 8 6 1 mA 2 mA mA mA mA 4 mA mA I
  12 10 8 6 1 mA 2 mA mA mA mA 4 mA mA I
  12 10 8 6 1 mA 2 mA mA mA mA 4 mA mA I
  12 10 8 6 1 mA 2 mA mA mA mA 4 mA mA I
  12 10 8 6 1 mA 2 mA mA mA mA 4 mA mA I
  12 10 8 6 1 mA 2 mA mA mA mA 4 mA mA I

mA

mA

mA

mA

4 mA

mA

  12 10 8 6 1 mA 2 mA mA mA mA 4 mA mA I
I F =14 mA
I F =14 mA

20

10

0 0

5

10

15

isfh615a_04

V CE (V)

Fig. 5 - Output Characteristics (Typ.) Collector Current vs. Collector Emitter Voltage

1.2

1.1

1.0

25° 50° 75°
25° 50° 75°
25° 50° 75°

25°

50°

75°

25° 50° 75°
25° 50° 75°
25° 50° 75°

10 0

10 1

10 2

0.9 10 - 1

isfh615a_05

I F (mA)

Fig. 6 - Diode Forward Voltage (Typ.) vs. Forward Current

20

15

10

5

0

f = 1 MHz C CE
f = 1 MHz C CE
f = 1 MHz C CE
f = 1 MHz C CE
f = 1 MHz C CE
f = 1 MHz C CE
f = 1 MHz C CE
f = 1 MHz C CE
f = 1 MHz C CE
f = 1 MHz C CE
f = 1 MHz C CE

f = 1

MHz

f = 1 MHz C CE
f = 1 MHz C CE
C CE
C
CE

10 -2

isfh615a_06

10 -1

10 0

V e (V)

10 1

10 2

Fig. 7 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage

Rev. 2.3, 25-Oct-11

5

For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 83671

I F (mA)

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10

10

10

10

4

3

2

1

t p t p D= I F T T Pulse cycle D = parameter
t
p
t p
D=
I
F
T
T
Pulse cycle
D = parameter

D

= 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

DC

D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 DC
p D= I F T T Pulse cycle D = parameter D = 0 0.005 0.01
p D= I F T T Pulse cycle D = parameter D = 0 0.005 0.01
p D= I F T T Pulse cycle D = parameter D = 0 0.005 0.01
p D= I F T T Pulse cycle D = parameter D = 0 0.005 0.01
p D= I F T T Pulse cycle D = parameter D = 0 0.005 0.01
p D= I F T T Pulse cycle D = parameter D = 0 0.005 0.01
p D= I F T T Pulse cycle D = parameter D = 0 0.005 0.01
p D= I F T T Pulse cycle D = parameter D = 0 0.005 0.01
p D= I F T T Pulse cycle D = parameter D = 0 0.005 0.01
p D= I F T T Pulse cycle D = parameter D = 0 0.005 0.01

10 - 5

10 - 4

10 - 3

10 - 2

10 - 1

10 0

isfh615a_07

t p (s)

10 1

Fig. 8 - Permissible Pulse Handling Capability Forward Current vs. Pulse Width

PACKAGE DIMENSIONS millimeters

Current vs. Pulse Width PACKAGE DIMENSIONS millimeters ISO methodA i178029_11 3 4 4.55 4.83 6.48 6.81

ISO methodA

i178029_11

3 4 4.55 4.83
3 4
4.55
4.83
millimeters ISO methodA i178029_11 3 4 4.55 4.83 6.48 6.81 pin one ID 0.76 1.14 0.79

6.48

6.81

pin one ID

0.76 1.14 0.79 typ. 3.30 3.81 0.249 4° typ. 0.102 2.54 typ. 1.27 typ.
0.76
1.14
0.79 typ.
3.30
3.81
0.249
4° typ.
0.102
2.54
typ.
1.27
typ.
0.76 R0.25 2.54 1.78 8 min. 1.52 11.05 9.53 10.03 7.52 7.90 10° 0.25 typ.
0.76
R0.25
2.54
1.78
8
min.
1.52
11.05
9.53
10.03
7.52
7.90
10°
0.25 typ.
8
min.
0.508
3° to 7°
1.02
Lead
coplanarity
0.004 max.

PACKAGE MARKING

YWW Y 68 SFH6156-4 V X018
YWW Y 68
SFH6156-4
V X018

This is an example of the marking used on the SFH6156-4X018T.

Rev. 2.3, 25-Oct-11

6

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Document Number: 83671

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