MOS Transistors

Yannis Tsividis

The Three-Terminal MOS Structure

Part 2
These slides are based on Y. Tsividis and C.
McAndrew, Operation and Modeling of the
MOS Transistor, Copyright Oxford University
Press, 2011. They are meant to be part of a
lecture, and may be incomplete or may not even
make sense without the accompanying
narration.

Strong Inversion

2-terminal structure:
= 0

3-terminal structure:
= 0 +

=
0

=
0 +

=
0

0 = + 0 + 0

= + 0 + + 0 +

Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011

Referring voltages to terminal B or terminal C:

= + 0 + + 0
= 0 +
=

+ 0 0

0 = + 0 + 0

Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011

Body effect

| |

for fixed

To keep at the same level,

we must increase

0
0
0
0

, , represent the onset

of weak, moderate, and strong
inversion

Body effect
coefficient

E.g.,

= + 2 + +

Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011

=2.0V1/2
0 (V)

1.5V1/2
1.0V1/2
0.5V1/2
0.2V1/2

(V)

= 0 +

+ 0 0

One of the manifestations of the body effect.

Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011

The pinchoff voltage

=constant

Exact

Strong-inv.
approx.

Strong
inversion

Strong inversion approximation:

( ) = + 0 + + 0 +
2

( ) =

2
= +
+
2
4

Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011

Weak inversion
Expanding as for 2-terminal structure:

2
2

2 +

2
= +
+
2
4

2
2

dependent
only on

dependent
only on

Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011

For a given :

( )

1
Slope=

2 +
+

=
exp

2 2 +

or ,
where =

Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011