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SPI CE BJ T Dec l ar at i on
The generic BJT is a 4-terminal device that is specified in the netlist as:
Qname NC NB NE <NS> ModName <Area>
where:
Ns: optional substrate node (assumed to be grounded if omitted)
Area: an optional area factor. Default: 1
Q1 1 2 3 MyBJT
1
2
3
If an optional parameter is omitted the default values are used.
Here is an example declaration for the devices at right:
Additional device parameters, including whether the device is NPN or PNP, are
defined in the MODEL declaration for MyBJT (next slide!)
NC
NB
NE
NS
1
2
3
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SPI CE BJ T Model
The SPICE BJT Model is defined in the netlist as
.MODEL ModName TYPE (parameters) (TYPE is either NPN or PNP)
Some key parameters are:
0 sec forward transit time (for b-e diffusion capacitance) TF
0 sec reverse transit time (for b-c diffusion capacitance) TR
1 Forward emission coefficient (ideality factor) NF
0.0 ohm emitter ohmic resistance RE
Default Units Description Parameter
0.0 ohm collector ohmic resistance RC
0.0 zero-bias (maximum) base resistance ohm RB
amp corner for forward-beta high-current roll-off IKF (IK)
1E-16 amp transport saturation current IS
0.0 farad base-emitter zero-bias p-n capacitance CJE
0.0 farad base-collector zero-bias p-n capacitance CJC
volt forward Early voltage VAF (VA)
100.0 ideal maximum forward beta BF
( )
/ NF
IS 1 1
VAF
T be
ce
c
V V
V
I e
| |
~ +
|
\ .
A simple silicon NPN device with no parasitics could be specified as
.MODEL MyBJT NPN (BF=200 VAF=75)
In terms of these parameters some of the basic device characteristics are:
TF 2CJE
m
C g
t
~ + Key Device Capacitances:
1
TR CJC
o
C
r

~ +
BF
m
r
g
t
=
c
m
T
I
g
V
=
VAF
o
c
r
I
=
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SPI CE BJ T Par amet er s
RB ohm minimum base resistance RBM
0.0 zero-bias (maximum) base resistance ohm RB
0
quasi-saturation model flag for temp. dependence of GAMMA, RCO, VO
if QUASIMOD = 0, then no temp dependence. if QUASIMOD = 1, then include
QUASIMOD
0.0 coulomb epitaxial region charge factor QCO
0.0 degree excess phase @ 1/(2TF)Hz PTF
1.0 substrate p-n emission coefficient NS
1.0 reverse current emission coefficient NR
0.5 high-current roll-off coefficient NK
1.0 forward current emission coefficient NF
1.5 base-emitter leakage emission coefficient NE
2.0 base-collector leakage emission coefficient NC
0.0 substrate p-n grading factor MJS (MS)
0.33 base-emitter p-n grading factor MJE (ME)
0.33 base-collector p-n grading factor MJC (MC)
0.0 flicker noise coefficient KF
0.0 amp transit time dependency on Ic ITF
0.0 amp substrate p-n saturation current ISS
0.0 amp base-emitter leakage saturation current ISE (C2)
0.0 amp base-collector leakage saturation current ISC (C4)
1E-16 amp transport saturation current IS
amp current at which Rb falls halfway to IRB
amp corner for reverse-beta high-current roll-off IKR
amp corner for forward-beta high-current roll-off IKF (IK)
1E-11 epitaxial region doping factor GAMMA
0.5 forward-bias depletion capacitor coefficient FC
1.11 eV bandgap voltage (barrier height) EG
0.87NPN, 0.52PNP quasi-saturation temperature coefficient for scattering-limited hole carrier velocity D
2.42NPN, 2.20PNP quasi-saturation temperature coefficient for hole mobility CN
0.0 farad substrate zero-bias p-n capacitance CJS (CCS)
0.0 farad base-emitter zero-bias p-n capacitance CJE
0.0 farad base-collector zero-bias p-n capacitance CJC
1.0 ideal maximum reverse beta BR
100.0 ideal maximum forward beta BF
1.0 flicker noise exponent AF
Default Units Description Model parameters
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BJ T SPI CE Par amet er s (c ont ..!)
3.0 IS temperature effect exponent XTI (PT)
0.0 transit time bias dependence coefficient XTF
0.0 forward and reverse beta temperature coefficient XTB
fraction of CJS connected internally to Rc XCJS
1.0 fraction of CJC connected internally to Rb XCJC2
1.0 fraction of CJC connected internally to Rb XCJC
volt transit time dependency on Vbc VTF
10.0 volt carrier mobility knee voltage VO
0.75 volt substrate p-n built-in potential VJS (PS)
0.75 volt base-emitter built-in potential VJE (PE)
0.75 volt base-collector built-in potential VJC (PC)
1.206 volt quasi-saturation extrapolated bandgap voltage at 0 K VG
volt reverse Early voltage VAR (VB)
volt forward Early voltage VAF (VA)
C relative to AKO model temperature T_REL_LOCAL
C relative to current temperature T_REL_GLOBAL
C measured temperature T_MEASURED
C absolute temperature T_ABS
0.0 C
-2
RBM temperature coefficient (quadratic) TRM2
0.0 C
-1
RBM temperature coefficient (linear) TRM1
0.0 C
-2
RE temperature coefficient (quadratic) TRE2
0.0 C
-1
RE temperature coefficient (linear) TRE1
0.0 C
-2
RC temperature coefficient (quadratic) TRC2
0.0 C
-1
RC temperature coefficient (linear) TRC1
0.0 C
-2
RB temperature coefficient (quadratic) TRB2
0.0 C
-1
RB temperature coefficient (linear) TRB1
0.0 sec ideal reverse transit time TR
0.0 sec ideal forward transit time TF
0.0 ohm emitter ohmic resistance RE
0.0 ohm epitaxial region resistance RCO
0.0 ohm collector ohmic resistance RC
Default Units Description Model parameters
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BJ T Devi c es i n Mul t i Si m
Select PlaceComponent
A number of virtual devices to
choose from, here we select the 3-
terminal NPN BJT
This will appear in the circuit schematic
Double-click on the component:
Click Edit
Model to see
SPICE Model
declaration
This is where
we modify the
SPICE model
parameters
In MultiSim
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Si mpl e NPN/PNP Devi c es i n Mul t i Si m
In ECE 2 we will often solve problems assuming a very basic device described by a current gain (),
and output resistance (Early voltage V
A
). Set these two parameters in the virtual Model as follows:
After making desired changes in the model, select Change Part Model. Only use Change
All Models if you want the same model to apply to all the BJTs in your circuit!
Be sure
to set the
units too!
All other parameters in the ideal (virtual) model can be left to
their default values.
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Ex ampl e Dat asheet SPI CE model s
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259
Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5
Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0
Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p
Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4
Vtf=4 Xtf=6 Rb=10)
2N3904
2N3906