TIP42, TIP42A, TIP42B, TIP42C PNP SILICON POWER TRANSISTORS

Designed for Complementary Use with the TIP41 Series 65 W at 25C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available
This series is currently available, but not recommended for new designs.

TO-220 PACKAGE (TOP VIEW)

B C E

1 2 3 Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25C case temperature (unless otherwise noted)

RATING TIP42 Collector-base voltage (IE = 0) TIP42A TIP42B TIP42 TIP42C Collector-emitter voltage (IB = 0) Emitter-base voltage TIP42A TIP42B TIP42C VCEO VEBO ICM Ptot LIC2 Tstg TL Tj Ptot IB IC SYMBOL V CBO VALUE -100 -120 -140 -40 -60 -100 -5 -6 -3 2 -80 V V A A A -80 UNIT V

Continuous collector current Continuous base current

Peak collector current (see Note 1)

-10 65 62.5

Continuous device dissipation at (or below) 25C case temperature (see Note 2) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range

Continuous device dissipation at (or below) 25C free air temperature (see Note 3)

-65 to +150 -65 to +150 250

mJ C C

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. 2. 3. 4.

This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.52 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 , V BE(off) = 0, RS = 0.1 , VCC = -20 V.

DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

TIP42, TIP42A, TIP42B, TIP42C PNP SILICON POWER TRANSISTORS

electrical characteristics at 25C case temperature
PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS TIP42 V(BR)CEO IC = -30 mA (see Note 5) VCE = -80 V ICES Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = -100 V VCE = -120 V VCE = -140 V ICEO IEBO hFE V CE(sat) VBE hfe VCE = -30 V VCE = -60 V VEB = VCE = VCE = IB = VCE = -5 V -4 V -4 V -0.6 A -4 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = -0.3 A IC = IC = IC = - 3A -6 A -6 A (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 20 3 30 15 75 -1.5 -2 V V IB = 0 TIP42A TIP42B TIP42C TIP42 TIP42A TIP42B TIP42C TIP42/42A TIP42B/42C MIN -40 -60 -80 -100 -0.4 -0.4 -0.4 -0.4 -0.7 -0.7 -1 mA mA mA V TYP MAX UNIT

VCE = -10 V VCE = -10 V

IC = -0.5 A IC = -0.5 A

|hfe |

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.92 62.5 UNIT C/W C/W

resistive-load-switching characteristics at 25C case temperature

PARAMETER ton toff

TEST CONDITIONS IC = -6 A VBE(off) = 4 V IB(on) = -0.6 A RL = 5

MIN IB(off) = 0.6 A tp = 20 s, dc 2%

TYP 0.4 0.7

MAX

UNIT s s

Turn-on time Turn-off time

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

PRODUCT
2

INFORMATION

DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

TIP42, TIP42A, TIP42B, TIP42C PNP SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE = -4 V TC = 25C tp = 300 s, duty cycle < 2% VCE(sat) - Collector-Emitter Saturation Voltage - V 1000
TCS634AD

COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT

-10
TCS634AE

IC = -300 mA IC = -1 A IC = -3 A IC = -6 A -10

hFE - DC Current Gain

100

10

-01

10 -001

-01

-10

-10

-001 -0001

-001

-01 IB - Base Current - A

-10

-10

IC - Collector Current - A

Figure 1.

Figure 2.

BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT

-12 VCE = -4 V TC = 25C VBE - Base-Emitter Voltage - V -11

TCS634AF

-10

-09

-08

-07

-06 -01

-10 IC - Collector Current - A

-10

Figure 3.

PRODUCT

INFORMATION
3

DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

TIP42, TIP42A, TIP42B, TIP42C PNP SILICON POWER TRANSISTORS

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS SAFE OPERATING AREA

-100

SAS634AB

IC - Collector Current - A

-10

tp = 300 s, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation

-10

-01

TIP42 TIP42A TIP42B TIP42C -10 -100 -1000

-001 -10

VCE - Collector-Emitter Voltage - V

Figure 4.

THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C

TIS633AB

Figure 5.

PRODUCT
4

INFORMATION

DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.