Photodiodes, Phototransistors DataBook

Optoelectronics
Lighting Imaging Telecom Sensors
Detectors and Sensors
Photodiodes, Phototransistors and Infrared Emitters
Specialty Lighting Digital Imaging Telecom Sensors
. Optoswitches, optical hybrids, custom assemblies, photodiodes, phototransistors, IR emitters, and photoconductive cells for industrial, commercial, and consumer electronics applications. PerkinElmer Optoelectronics has the distinction of being one of the foremost manufacturers in optoelectronics. Founded in 1947, PerkinElmer offers its customers over 35 years experience in the development and application of optoelectronic devices. The product line is one of the broadest in the industry, including a variety of standard catalog products as well as custom design and manufacturing capabilities. Approximately 75% of the products shipped are custom designed and tested to serve the needs of specific OEM applications. Three basic objectives guide PerkinElmers activities - Service, Quality, and Technology. Our outstanding engineering staff, coupled with the implementation of modern material control and manufacturing techniques, plus our commitment to quality, has gained PerkinElmer certified status with many major customers. Products are often shipped directly to manufacturing lines without need for incoming QC at the customers facility. PerkinElmers products are vertically integrated, from the growing of LED crystals, silicon die fabrication, package design, reliability qualification, to assembly. Vertical integration is your assurance of consistent quality. Recognizing the need for low-cost manufacturing to serve world markets, PerkinElmer expanded its manufacturing/assembly operations into the Far East more than 20 years ago. The combination of strong technology in processing at the St. Louis headquarters and lowcost assembly operations in the Far East has allowed PerkinElmer to effectively serve all markets, worldwide. PerkinElmer provides optical sensors, IR emitters and subassemblies for such diverse applications as street light controls, cameras, smoke alarms, business machines, automotive sensors, and medical equipment. For pricing, delivery, data sheets, samples, or technical support please contact your PerkinElmer Sales Office or direct your questions directly to the factory. PerkinElmer Optoelectronics 10900 Page Avenue St. Louis, Missouri 63132 USA Tel: (314) 423-4900 Fax: (314) 423-3956 Copyright 2001 by PerkinElmer Optoelectronics All rights reserved www.perkinelmer.com/opto
Table of Contents
Custom and Semi_Custom IREDs and Detectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Gerneral Notes on Products in this Catalog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Optical Dice: Quality Emitters & Photodetectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Photodiode Part Number Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Photodiode Selection Chart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Typical Applicatons of Photodiodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Why Use Photodiodes? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Typical Application Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 12 15
What is a Photodiode? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Characteristics of a Photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Device Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VTB Process Photodiodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VTP Process Photodiodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VTS Process Photodiodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alternate Source / Second Source Photodiodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 21 45 66 71
Table of Contents
Phototransistor and IRED Part Number Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 Phototransistor and IRED Selection Guide. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 Typical Phototransistor and IRED Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Why Use Phototransistors? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Why Use IREDs? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Fundamental Circuit Approaches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84 84 84 85 86
What are Phototransistors? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87 Characteristics of Phototransistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 Phototransistor Specifications Typical Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 .025" NPN Phototransistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93 .040" NPN Phototransistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 .050" NPN Phototransistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102 What is an LED? What is an IRED? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104 Characteristics of IREDs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 GaAlAs 880 nm IREDs - General Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 GaAs 940 nm Infrared Light Emitting Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123 Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 APPLICATION NOTE #1 Light - Some Physical Basics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . APPLICATION NOTE #2 Spectral Output of Common Light Sources . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . APPLICATION NOTE #3 Photodiode Response Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . APPLICATION NOTE #4 Modes of Operation - Photovoltaic vs. Photoconductive . . . . . . . . . . . . . . . . . . . . . . . . APPLICATION NOTE #5 Photodiode Noise Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . APPLICATION NOTE #6 Photodiode Processes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . APPLICATION NOTE #7 Array and Custom Detector Guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . APPLICATION NOTE #8 Photometric and Radiometric Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . APPLICATION NOTE #9 The Effect of Packaging on The Light Output of IREDs . . . . . . . . . . . . . . . . . . . . . . . . APPLICATION NOTE #10 Characterization of IRED Power Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . APPLICATION NOTE #11 IRED Axial Power Out Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . APPLICATION NOTE #12 IREDs with Narrow Beam Patterns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . APPLICATION NOTE #13 Biasing IREDs and Phototransistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . APPLICATION NOTE #14 Discrete Chips - An Alternative to Space Problems . . . . . . . . . . . . . . . . . . . . . . . . . . APPLICATION NOTE #15 Handling and Soldering Optoe Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . APPLICATION NOTE #16 Recommended Cleaning Agents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 130 131 133 133 136 137 138 140 142 144 145 147 148 149 150
ii
Custom and Semi-Custom IREDs and Detectors

Upon request, and where sufficient quantities are involved, PerkinElmer Optoelectronics will test standard parts to your unique set of specifications. Testing parts under actual operating conditions gives you the benefit of predictable performance in your application. PerkinElmer offers a broad line of standard IREDs and phototransistors in a wide variety of packages and specifications. Nevertheless, some applications demand a totally custom device. Recognizing this real need, PerkinElmers engineering, research, and sales departments are experienced in working with the customer from initial concept through design, prototype, and volume production. A custom design usually requires the commitment of valuable resources. PerkinElmer reviews requests for custom devices on a case by case basis and reserves the right to decide if the business potential warrants the undertaking of such a project. The customer may be asked to share in the expense of development. PerkinElmer has designed and fabricated custom products for many companies. Our staff can work closely with the you and protect your proprietary information. Your inquiries to PerkinElmer should include electrical, environmental, and mechanical requirements. Also, information on anticipated volumes, price objectives, and lead times is helpful since these often determine the choices of design and tooling.
General Notes on Products in this Catalog

The following notes pertain to specific items in the data sheet sections of this catalog which are highlighted with the symbol .
Visible Blocking Filter Devices

Unfiltered silicon detectors respond to light from the near UV, through the visible part of the spectrum, and into the infrared. In many applications these detectors are paired with an infrared light source, typically an IRED. In such situations, any ambient light from the visible part of the spectrum incident upon the detector will result in an undesirable output signal. For certain families, PerkinElmer can supply devices which have an infrared transmitting/visible blocking filter incorporated into the package, effectively eliminating most of this unwanted visible light. Refer to the Relative Spectral Response Curves in the Typical Characteristic Curve sections of this catalog for a comparison of filtered and non-filtered devices.
Absolute Maximum Ratings

The absolute maximum ratings are a listing of the environmental and electrical stresses that may be applied to a device without resulting in short term or catastrophic damage. However, exposure to maximum ratings conditions for extended periods of time may adversely affect device reliability. Maximum limit ratings cannot be used simultaneously. Operation at one maximum limit may preclude the operation at the maximum limit of a different parameter.
Part Numbers and Binning Conventions

PerkinElmers standard police is to ship the minimum sensitivity/power output grade or any higher grade to fill the customers order. This policy applies to devices carrying minimum ratings only. If only one grade or bin is needed, please call PerkinElmer for the proper purchasing specification and part numbers. Example: VTT1115 are ordered. PerkinElmer reserves the right to ship VTT1115, VTT1116, or VTT1117 (in any combination) to fill the order. lc (min) @ 100 fc VTT1115 VTT1116 VTT1117 Each part will be printed with its respective part number. 1.0 mA 2.0 mA 4.0 mA
Optoelectronic Dice: Quality Emitters & Photodetectors

PerkinElmer Optoelectronics offers its superior line of emitters and photosensors in chip form for packaging by the OEM or contract manufacturer. The product line includes Gallium Arsenide (GaAs) and Gallium Aluminum Arsenide (GaAlAs) infrared emitters, N-P-N silicon phototransistors, and silicon photodiodes, available as PN or PIN devices in wirebondable or solderable contact configurations. All of PerkinElmers quality line of chip products are produced in Canada under controlled cleanroom environments using enhanced process control in diffused junction formation, epitaxial growth, thin film deposition, and passivation technologies. These same dice are used by PerkinElmer in high volume to manufacture high quality finished packaged devices.
Some of the More Popular Chip Products Include:

Part Number VTE-C15AL VTE-C13AL VTE-C13 VTT-C25 VTT-C40 VTD-C40 VTP-C120 VTH-C120 GaAlAs Infrared Emitting LED GaAs Infrared Emitting LED Silicon Phototransistor Silicon Phototransistor Silicon PN Photodiode Silicon PIN Photodiode Silicon PIN Photodiode Description Nominal Size .015" x .015" .013" x .013" .013" x .013" .025" x .025" .040" x .040" .040" x .040" .120" x .120" .120" x .120" 880 nm Emission 940 nm Emission Performance Highlights 8 mW min. Total Output Power @ lF = 100 mA Pulsed 1.6 mW min. Total Output Power @ lF = 20 mA 1.0 mW min. Total Output Power @ lF = 20 mA For Applications Requiring Maximum power from an infrared source An infrared source at lower drive currents Longer wavelength emission Optimized ratio of output to chip size A large collection area with high output Small size and low dark current High unity gain output at moderate speed & dark current High Speed, low noise, and excellent photoresponse
Min. DC Current Gain of 200 (1000 typ.) @ VCE = 5V, 1B = 1.3 A Min. DC Current Gain of 150 (1000 typ.) @ VCE = 5V, 1B = 4.0 A 5.9 A minimum Photocurrent @ 100 fc, 2850 K Illumination .50 A/W min. Peak Radiometric Sensitivity 15 nA max. Dark Current @ VR = 20V 15 ns typ. Risetime @ VR = 20V 2 nA Dark Current .50 A/W min. Peak Radiometric Sensitivity
Custom die configurations can be designed and manufactured. For information on custom products or specific data sheets for the listed parts, contact our local sales organization. Large area solderable contact VTS series devices are also available in chip form. Photodiode and phototransistor dice are 100% probed and inked so that known good die (KGD) are delivered to the customer. All chips are available either as whole wafers or as diced wafers on expanded membrane, presented on grip rings. Note: PerkinElmer Optoelectronics cannot be responsible for damage incurred through improper customer dice handling or packaging. PerkinElmer reserves the right to change design or performance without prior notice in order to continuously improve our product.
Photodiode Part Number Index

Part No. Page Part No. Page Part No. Page
VTB100 . . . . . . . . . . . . . . . . . . . . 23 VTB1012 . . . . . . . . . . . . . . . . . . . 24 VTB1012B . . . . . . . . . . . . . . . . . . 25 VTB1013 . . . . . . . . . . . . . . . . . . . 24 VTB1013B . . . . . . . . . . . . . . . . . . 25 VTB1112 . . . . . . . . . . . . . . . . . . . 26 VTB1112B . . . . . . . . . . . . . . . . . . 27 VTB1113 . . . . . . . . . . . . . . . . . . . 26 VTB1113B . . . . . . . . . . . . . . . . . . 27 VTB4051 . . . . . . . . . . . . . . . . . . . 28 VTB5051 . . . . . . . . . . . . . . . . . . . 29 VTB5051B . . . . . . . . . . . . . . . . . . 30 VTB5051J . . . . . . . . . . . . . . . . . . 31 VTB5051UV . . . . . . . . . . . . . . . . 32 VTB5051UVJ . . . . . . . . . . . . . . . . 33 VTB6061 . . . . . . . . . . . . . . . . . . . 34 VTB6061B . . . . . . . . . . . . . . . . . . 35 VTB6061CIE . . . . . . . . . . . . . . . . 36 VTB6061J . . . . . . . . . . . . . . . . . . 37 VTB6061UV . . . . . . . . . . . . . . . . 38 VTB6061UVJ . . . . . . . . . . . . . . . . 39 VTB8341 . . . . . . . . . . . . . . . . . . . 40 VTB8440 . . . . . . . . . . . . . . . . . . . 41 VTB8440B . . . . . . . . . . . . . . . . . . 42 VTB8441 . . . . . . . . . . . . . . . . . . . 41 VTB8441B . . . . . . . . . . . . . . . . . . 42 VTB9412 . . . . . . . . . . . . . . . . . . . 43 VTB9412B . . . . . . . . . . . . . . . . . . 44
VTB9413 . . . . . . . . . . . . . . . . . . . 43 VTB9413B . . . . . . . . . . . . . . . . . . 44 VTD31AA . . . . . . . . . . . . . . . . . . . 72 VTD34 . . . . . . . . . . . . . . . . . . . . . 73 VTD34F . . . . . . . . . . . . . . . . . . . . 74 VTD205 . . . . . . . . . . . . . . . . . . . . 75 VTD205K . . . . . . . . . . . . . . . . . . . 76 VTD206 . . . . . . . . . . . . . . . . . . . . 77 VTD206K . . . . . . . . . . . . . . . . . . . 78 VTH2090 . . . . . . . . . . . . . . . . . . . 79 VTP100 . . . . . . . . . . . . . . . . . . . . 47 VTP100C . . . . . . . . . . . . . . . . . . . 48 VTP1012 . . . . . . . . . . . . . . . . . . . 49 VTP1112 . . . . . . . . . . . . . . . . . . . 50 VTP1188S . . . . . . . . . . . . . . . . . . 51 VTP1232 . . . . . . . . . . . . . . . . . . . 52 VTP3310LA . . . . . . . . . . . . . . . . . 53 VTP3410LA . . . . . . . . . . . . . . . . . 54 VTP4085 . . . . . . . . . . . . . . . . . . . 55 VTP4085S . . . . . . . . . . . . . . . . . . 55 VTP5050 . . . . . . . . . . . . . . . . . . . 56 VTP6060 . . . . . . . . . . . . . . . . . . . 57
VTP7110 . . . . . . . . . . . . . . . . . . . 58 VTP7210 . . . . . . . . . . . . . . . . . . . 59 VTP7840 . . . . . . . . . . . . . . . . . . . 60 VTP8350 . . . . . . . . . . . . . . . . . . . 61 VTP8440 . . . . . . . . . . . . . . . . . . . 62 VTP8551 . . . . . . . . . . . . . . . . . . . 63 VTP8651 . . . . . . . . . . . . . . . . . . . 64 VTP9412 . . . . . . . . . . . . . . . . . . . 65 VTS2080 VTS2081 VTS2082 VTS2083 VTS2084 VTS2085 VTS2086 VTS3080 VTS3081 VTS3084 VTS3085 VTS3086 VTS3180 VTS3181 VTS3182 VTS3183 VTS3184 VTS3185 VTS3186 . . . . . . . . . . . . . . . . . . . 68 . . . . . . . . . . . . . . . . . . . 69 . . . . . . . . . . . . . . . . . . . 68 . . . . . . . . . . . . . . . . . . . 69 . . . . . . . . . . . . . . . . . . . 69 . . . . . . . . . . . . . . . . . . . 68 . . . . . . . . . . . . . . . . . . . 70 . . . . . . . . . . . . . . . . . . . 68 . . . . . . . . . . . . . . . . . . . 69 . . . . . . . . . . . . . . . . . . . 69 . . . . . . . . . . . . . . . . . . . 68 . . . . . . . . . . . . . . . . . . . 70 . . . . . . . . . . . . . . . . . . . 68 . . . . . . . . . . . . . . . . . . . 69 . . . . . . . . . . . . . . . . . . . 68 . . . . . . . . . . . . . . . . . . . 69 . . . . . . . . . . . . . . . . . . . 69 . . . . . . . . . . . . . . . . . . . 68 . . . . . . . . . . . . . . . . . . . 70
Photodiode Selection Guide

PACKAGE OUTLINE inch (mm) PART NO. FEATURES Molded Leadframe Lensed Lateral Low Capacitance PAGE
VTP7110
58
VTP7210
Visible Blocking Filter
59
CASE 7
LATERAL
VTB8341
Blue Enhanced
40
VTP8350
Low Capacitance
61
CASE 11
CERAMIC
VTP1188S
Clear Lensed Ceramic Low Capacitance, Large Area
51
CASE 12
LENSED CERAMIC VTB4051 Blue Enhanced 28
VTD31AA
CLD31AA Equivalent
72
VTP4085 VTP4085S
Low Capacitance
55
CASE 13
CERAMIC

PACKAGE OUTLINE inch (mm) PART NO. VTB5051 FEATURES Blue Enhanced PAGE 29
VTB5051B
Blue Enhanced, Infared Rejection Filter Blue Enhanced Low Capacitance Low Capacitance
30
VTB5051UV
32
VTP5050 CASE 14 TO-5 (2 LEAD)
56
VTB5051J
Blue Enhanced, Isolated Chip
31
VTB5051UVJ
Blue Enhanced, UV Transmitting Window Isolated Chip
33
CASE 14A
TO-5 (3 LEAD) VTB6061 Blue Enhanced 34
VTB6061B
Blue Enhanced Infared Rejection Filter Blue Enhanced, UV Transmitting Window Low Capacitance
35
VTB6061UV
38
CASE 15
TO-8 (2 LEAD)
VTP6060
57
VTB6061J
Blue Enhanced, Isolated Chip
37
VTB6061UVJ
Blue Enhanced, UV Transmitting Window Isolated Chip
38
CASE 15A TO-8 (3 LEAD)

PACKAGE OUTLINE inch (mm) PART NO. VTB1012 VTB1013 FEATURES PAGE
Blue Enhanced
24
VTB1012B VTB1013B
Blue Enhanced, Infared Rejection Filter
25
VTP1012 CASE 17 TO-46 VTB1112 VTB1113
Low Capacitance
49
Blue Enhanced
26
VTB1112B VTB1113B
27
VTP1112 CASE 19 TO-46 LENSED
Low Capacitance
50
VTB9412 VTB9413
Blue Enhanced
43
VTP9412 CASE 20 6 mm CERAMIC
Low Capacitance
65
VTB9412B VTB9413B
44
CASE 20F
6 mm CERAMIC (FILTERED)

PACKAGE OUTLINE inch (mm) PART NO. FEATURES PAGE
VTB8440 VTB8441
Blue Enhanced
41
VTP8440 CASE 21 8 mm CERAMIC
Low Capacitance
62
VTB8440B VTB8441B
42
CASE 21F
8 mm CERAMIC (FILTERED) VTD34 BPW34 Equivalent 73
VTD34F
BPW34 Equivalent Visible Rejection Filter
74
VTP8551
Low Capacitance
63
CASE 22
MINI-DIP
VTP8651
Low Capacitance Visible Rejection Filter
64
VTP1232
Large Dectecting Area Low Capacitance
52
CASE 26
T-1

20 SERIES
VTS2080 VTS2082 VTS2085 30 SERIES VTS3080 VTS3082 VTS3085 VTS3180 VTS3182 VTS3185 Low Capacitance, Large Area, Solder Contacts
68
31 SERIES
CASE 44A
20 SERIES
30 SERIES
VTS2086 VTS3086 VTS3186
Low Capacitance, Large Area, Solder Contacts
70
31 SERIES
CASE 44B

20 SERIES
VTS2081 VTS2083 VTS2084 30 SERIES VTS3081 VTS3083 VTS3084 VTS3181 VTS3183 VTS3184 Low Capacitance, Large Area, Solder Contacts 69
31 SERIES
CASE 44C
VTP3310LA
Low Capacitance
53
VTP3410LA CASE 50A LONG T-1
54
VTP7840
60
CASE 51
10

PACKAGE OUTLINE inch (mm) PART NO. VTB100 FEATURES Blue Enhanced PAGE 23
VTP100
47
VTP100C CASE 52 FLAT SIDELOOKER
Low Capacitance Clear Epoxy
48
VTH2090
S1723-04 Equivalent
79
CASE 53
BLACK CERAMIC
VTD205
SFH205 Equivalent Visible Rejection Filter Low Capacitance
75
VTD205K CASE 60 TO-92 TYPE (ROUND LENS)
SFH205K Equivalent Low Capacitance
76
VTD206
SFH206 Equivalent Visible Rejection Filter Low Capacitance
77
VTD206K
SFH206K Equivalent
78
CASE 61
TO-92 TYPE (FLAT LENS)
11
Photodiode Typical Applications

Why Use Photodiodes?
Photodiodes are unique among light detectors in that when illuminated, they generate an output which is proportional to light level. Their characteristics and features can be summarized as follows: Low cost visible and near-IR photodetector Excellent linearity in output photocurrent over 7 to 9 decades of light intensity Fast response times Available in a wide range of packages including epoxy coated, transfer molded, cast, and hermetic packages as well as in chip form Low noise Mechanically rugged yet compact and lightweight Available as duals, quads or as linear arrays Usable with almost any visible or near infrared light source such as LEDs; neon, fluorescent, incandescent bulbs; lasers; flame sources; sunlight; etc. Can be designed and tested to meet the requirements of your application
Applications
Photodiodes are used in many different types of circuits and applications. Here are a few examples of where photodiodes have been used. Camera Light Meters Automatic Shutter Control Auto-focus Photographic Flash Control Automotive Headlight Dimmer Twilight Detectors Climate Control - Sunlight Detector
Communications Fiber Optic Links Optical Communications Optical Remote Control
Medical CAT Scanners - X ray Detection Pulse Oximeters Blood Particle Analyzers
Industry Bar Code Scanners Light Pens Brightness Controls Encoders Position Sensors Surveying Instruments Copiers - Density of Toner
Safety Equipment Smoke Detectors Flame Monitors Security Inspection Equipment - Airport X ray Intruder Alert - Security System
12

Typical Application Circuits
Basic Transimpedance Op-Amp Circuit
Light Meter (with three sensitivity ranges)
Fiber Optic Link
13

Typical Application Circuits (cont.)
Balancing Circuit
Smoke Detector
CAT Scan (X ray Detector)
Pulse Monitor (Finger Probe)
14
What is a Photodiode?
A silicon photodiode is a solid state light detector that consists of a shallow diffused P-N junction with connections provided to the out side world. The cross section of a typical photodiode is shown below. The current/voltage characteristics of photodiodes are very similar to those of signal diodes except that the curves shift dependent upon the level of incident light. For a given level of illumination the diode will generate a specific current and voltage as determined by its characteristic curves.
ISC = Short Circuit Current VOC = Open Circuit Voltage ID = Dark Current VBR = Rev. Breakdown Voltage
Cross Section of a Planar Diffused Photodiode
When the top surface is illuminated, photons of light penetrate into the silicon to a depth determined by the photon energy and are absorbed by the silicon generating electron-hole pairs. The electron-hole pairs are free to diffuse (or wander) throughout the bulk of the photodiode until they recombine. The average time before recombination is the minority carrier lifetime. At the P-N junction is a region of strong electric field called the depletion region. It is formed by the voltage potential that exists at the P-N junction. Those light generated carriers that wander into contact with this field are swept across the junction. If an external connection is made to both sides of the junction a photoinduced current will flow as long as light falls upon the photodiode. In addition to the photocurrent, a voltage is produced across the diode. In effect, the photodiode functions exactly like a solar cell by generating a current and voltage when exposed to light.
Current/Voltage Characteristics
While all silicon photodiodes have similar characteristics, their performance can be modified, to some degree, through selection of the basic silicon starting material and choice of processing parameters. Different applications place diverse demands on the performance of the photodiodes. PerkinElmer makes use of three different standard photodiode processes in order to produce diodes with a wide range of characteristics. For a more detailed discussion of the trade-offs between the various processes the reader is referred to Application Note #6.
15
Characteristics of a Photodiode
Spectral Response
The magnitude of the photocurrent generated by a photodiode is dependent upon the wavelength of the incident light. Silicon photodiodes exhibit a response from the ultraviolet through the visible and into the near infrared part of the spectrum. The spectral response peaks in the near infrared region between 800 nm and 950 nm. The shape of the spectral response curve, especially in the blue and UV part of the spectrum, can be altered by choosing among a number of manufacturing processes developed at PerkinElmer. An example of this is the blue enhanced photodiode whose sensitivity to light from the short wavelength part of the spectrum has been increased. Optical filters can also be added to change the spectral response. There are several popular ways to characterize the spectral response, following are brief descriptions of the most common ones. Re = ISC/Ee where: Re = responsivity (A/[W/cm2]) ISC = short circuit photocurrent (A) Ee = irradiance (W/cm2) The VTP1188S has a typical responsivity of 0.15 A/(W/cm2) @ 940 nm.
Quantum Efficiency - Q.E.

If the photodiode operated at 100% efficiency each photon of light striking the detector would result in one electron being added to the photocurrent. The Q.E. relates, as a percentage, the energy per photon and the quantum yield, electrons per photon. Q.E. = (124 SR)/ where: Q.E. = quantum efficiency (%) SR = radiometric sensitivity (A/W) = wavelength of light (micrometer) The VTP process produces devices with a Q.E. of 75% @ 940 nm. The responsivity of a silicon photodiode varies with temperature dependent upon the wavelength of the light. Curves in the data sheet section show plots of the responsivity temperature coefficient versus wavelength of light. The temperature coefficient is negative at the shorter wavelength of light and becomes positive in the infrared part of the spectrum. Of interest is the fact that for most diodes there is a range of wavelengths where the temperature coefficient is effectively zero.
Radiometric Sensitivity - SR
Sr is the ratio of the short-circuit photocurrent generated by the photodiode (A-amps) divided by the energy of the incident light (Wwatts). For photodiodes made with the VTS process, a typical radiometric sensitivity of 0.6 A/W can be expected at the peak spectral response wavelength of 925 nm. Curves of this measure of sensitivity are often plotted with the SR normalized in order to show relative spectral response. SR = ISC / where: SR = radiometric sensitivity (A/W) ISC = short circuit photocurrent (A) = radiant flux (W)
Responsivity - Re
Re is a measure of sensitivity which takes into account the active area of the photodiode chip. This parameter is obtained by dividing the short-circuit light current (mA-microamps) by the energy of the light per unit area (W/cm2).
16
Sensitivity
One of the standard methods used to specify the sensitivity of a photodiode is to state its short circuit photocurrent (ISC) at a given light level from a well defined light source. The most commonly used source is an incandescent tungsten lamp running at a color temperature at 2850 K. At 100 fc, ISC can vary over a range from microamps to milliamps depending on chip size and package employed. Photodiodes have unity internal gain. In order to increase their sensitivity to light one can either increase the active area of the photodiode chip itself or use lenses to increase the effective active area. The relationship between active area and sensitivity tends to be linear: doubling the active area doubles the output current. If the external terminals are shorted together a short circuit photocurrent ISC will flow. When this happens, for the ideal case, VF = 0. ISC = IP (ideal case) For the real world case: IO = IP IF ISH ISC = IP ISAT ( e where: KT/q = 0.026 @ 25C and since VO = 0, thus: VF = ISC RS ISC = IP ISAT ( e
q ( I S C R S ) KT qVF KT
1 ) ISCRS / RSH
1 ) (ISC RS)/ RSH
Linearity
Shown below is the equivalent circuit for a photodiode. Under zero applied reverse bias the photocurrent will divide between the internal junction or shunt resistance and the external load resistance.
For the non ideal case the second and third term of the above equation limit the linearity. In order to achieve good linearity RS should be made as small as possible and RSH as large as possible. Despite these shortcomings the short circuit light current is often quite linear over a wide range of light intensities. Excellent linearity over 6 to 9 decades of light intensity can be expected. As a consequence of this behavior photodiodes are often used in applications where absolute measurement of light intensity is required. At low light levels linearity is limited by the dark (or shunt) resistance and the noise current. At high levels of irradiance linearity is limited by the internal series resistance of the photodiode.
where IP = light generated photocurrent VF = forward voltage drop across diode IF = forward current through diode IN = noise current CJ = junction capacitance RSH = shunt resistance ISH = shunt current RS = series resistance VO = output voltage IO = output current For an ideal photodiode, RS = 0 and RSH = infinity. IO = IP IF
Dark Current (ID)

The dark current is the leakage current that flows when the photodiode is in the dark and a reverse voltage is applied across the junction. This voltage is applied across the junction. This voltage may be as low as 10 mV or as high as 50 V and the dark currents may vary from pA to A depending upon the junction area and the process used. Dark current is always specified at a particular value of reverse applied voltage. The dark current is temperature dependent. The rule of thumb is that the dark current will approximately double for every 10C increase in ambient temperature. However, specific diode types can vary considerably from this relationship.
17
Shunt Resistance (RSH)
The shunt resistance, or dynamic junction resistance at zero voltage is determined by applying a small voltage to the photodiode, typically 10 mV, and measuring the resulting current. Values for the shunt resistance can vary from 100k to 100G ohms. The noise performance and the linearity of the short circuit photocurrent are directly related to the value of the shunt resistance. This parameter is voltage dependent but still is quite useful in calculating the offset gain (GOS = 1 + RF / RSH) in transimpedance amplifier circuits. The shunt resistance is dependent on the active area of the diode chip and on the type of processing used. It is also temperature dependent, decreasing with increasing temperature.
Open Circuit Voltage (VOC)

The open circuit voltage is the voltage generated by the photodiode when the photocurrent is equal to zero. VOC varies logarithmically with light. VOC is typically in the range of 300 mV to 450 mV @ 100 fc. Due to its large temperature coefficient VOC is not recommended as an accurate measure of light level.
Response Time
A photodiode takes a certain amount of time to respond to a sudden change in light levels. It is common practice to express to response time in terms of the rise time (tR) or the fall time (tF) where: tR = The time required for the output to rise from 10% to 90% of its final value. tF = The time required for the output to fall from 90% to 10% of its on state value. The response time of a photodiode depends upon many factors, including the wavelength of the light, the value of the applied voltage across the diode (since this has a major effect of the junction capacitance), and the load resistance. Characteristic curves given with each process show that the nonsaturated response time is largely dependent upon the product of the junction capacitance and load resistance. However, when this product is small, other effects become significant and limit the response time. For a more complete treatment of this subject the interested reader is referred to Application Note #3.
Junction Capacitance (CJ)

A capacitance is associated with the depletion region which exists at the P-N junction. The response time of a photodiode is dependent to a large extent upon the product of the junction capacitance and the external load resistor. The junction capacitance increases with increasing junction area of the photodiode chip. It is also a function of any reverse voltage applied across the photodiode. When a reverse voltage is applied the depletion layer will expand and the junction capacitance will decrease. The capacitance will continue to decrease with increasing reverse applied voltage until the depletion region expands to the back surface of the photodiode chip at which point the diodes capacitance becomes nearly constant.
Reverse Breakdown Voltage (VBR)

This is the maximum reverse voltage that can safely be applied across the photodiode before breakdown occurs at the junction. The breakdown voltage is determined by the process but is a screened parameter. The diode should never be exposed to VBR even for a short period of time since permanent damage can occur. Diodes normally intended for photovoltaic operation do not have this parameter specified. Typical values for VBR range from 5V to over 100V.
Noise Current (IN)

A photodiode will act as a source for electrical noise and generate a noise current (IN). The noise current will limit the usefulness of the photodiode at very low light levels where the magnitude of the noise approached that of the signal photocurrent. The amount of noise generated is dependent upon the characteristics of the photodiode and the operating conditions.
18
There are three main components which go into making up the total noise generated by the photodiode; thermal noise, shot noise, and flicker noise. Thermal (or Johnson noise) is inversely related to the value of the shunt resistance (RSH) of the photodiode. Thermal noise tends to be the dominant noise component when the diode is operated under zero applied reverse bias conditions. Shot noise is dependent upon the leakage or dark current (ID) of the photodiode. It tends to dominate when the photodiode is used in the photoconductive mode where an external reverse bias is applied across the device. Flicker noise is unlike thermal or shot noise in that it possesses a 1/f spectral density. Flicker noise may dominate when the bandwidth of interest contains frequencies less than 1 kHz. For a more detailed discussion of noise the reader may refer to Application Note #5.
Package Style
Diodes presented in this catalog are mounted in several different types of packages or may be purchased unmounted. In general, the style of package chosen will have an influence on the electro-optical characteristics of the photodiode and the temperature range it can safely be exposed to. Hermetic packages have glass to metal seals. The chips are typically mounted directly to the inside of the package. In special cases the chip might be isolated from the package in order to allow the metal package to be grounded, therefore reducing noise pickup in high gain circuits. Hermetic packages are quite rugged and are well suited for high humidity environments. However, some care must be used to prevent stress to the glass seals around the wires and lens. Ceramic packages utilize an epoxy coating to protect the chip. In this type of packaging scheme the photodiode chip is placed down onto a metallized ceramic substrate which has leads exiting through the back surface. After bonding, the chip is coated with a clear epoxy. This represents a low cost approach to packaging large area chips. Epoxy packages may be molded of cast. The photodiode chip is place down on a metal leadframe and then is completely encased in molded or cast epoxy. This is the lowest cost packaging scheme. Unmounted cells in the VTS series are fragile, especially when the area is large. The front and back electrodes are solder coated and may be soldered using a 60/40 tin-lead solder. The flux should be active so that the joint may be made quickly to minimize heating. Whenever possible, it is recommended that soldering be done by PerkinElmer since excessive heat may degrade the device parameters. Avoid handling leadless cells with bare fingers.
Angular Response
The angular response of a detector is basically a measure of its field of view. A photodiode in chip form would have a 180 field of view. A chip in a TO-18 package would have a narrower field of view due to the height of the wall of the package and any lensing caused by the window. Typically the output of the detector is at a maximum when the light source is directly overhead. As the light source is swung in an equal distance arc around the detector, an angle is reached where the signal from the detector is 1/2 of that when the light source was directly overhead. This point is defined as the 1/2 power angle (1/2).
19
Temperature Ratings
Package Type Hermetic Chips < .040" x .040" Chips > .040" x .040" Ceramic or Metal Header Blob Top Cast (Leadframe) Devices Transfer Molded (Leadframe) Devices Unmounted Photovoltaic Cells, Buss Wires or No Wires Photovoltaic Cells with Insulated Flying Leads Chip On-Board (Printed Circuit Boards) Storage Operating
-55C to 125C -40C to 110C -20C to 75C -40C to 100C -40C to 85C -40C to 150C -40C to 105C -20C to 85C
-40C to 125C -40C to 110C -20C to 75C -40C to 100C -40C to 85C -40C to 125C -40C to 105C -20C to 85C
20
VTB Process Photodiodes

VTB PROCESS BLUE ENHANCED, ULTRA HIGH DARK RESISTANCE FEATURES
Enhanced UV to IR spectral range Integral IR rejection filters available Response @ 220 nm, 0.06 A/W, typical with UV window Response @ 365 nm, 0.14 A/W typical High open circuit voltage @ low light levels 1 to 2% linearity over 7 to 9 decades Very low dark current & high shunt resistance
PRODUCT DESCRIPTION
This series of P on N silicon planar photodiodes have been designed to maximize their response through the visible part of the spectrum. Those units with UV transmitting windows also exhibit excellent response in the UV region and are characterized at 220 nm. B series devices have a built-in infrared rejection filter for those applications where a detector is needed that approximates the human eye. Typical transmission of wavelengths greater than 750 nm is less than 3% when measured with an incandescent source operating at 2850 K. Diodes made with the VTB process are primarily intended for use in the photovoltaic mode but may be used with a small reverse bias. All photodiodes in this series exhibit very high shunt resistance. This characteristic leads to very low offsets when the diodes are used in high gain transimpedance op-amp circuits.
TYPICAL CHARACTERISTIC CURVES @ 25C (UNLESS OTHERWISE NOTED)

Absolute Spectral Response Absolute Spectral Response B Series (Filtered)
21

Relative Dark Current or Resistance vs. Temperature (Refered To 25C) Relative Junction Capacitance vs. Voltage (Reffered To Zero Bias)
Temperature Coefficient of Light Current vs. Wavelength
Relative Short Circuit Current vs. Illumination
Open Circuit Voltage vs Illumination
Rise/fall Times - Non Standard
22
VTB100
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue response.
CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2)
ABSOLUTE MAXIMUM RATINGS

Storage Temperature: Operating Temperature: -40C to 100C -40C to 100C
ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22)

VTB100
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 30 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 10 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 70 2.6 x 10-14 (Typ.) 1.05 x 10 13 (Typ.) .1 1100 50 Typ. 65 .12 490 -2.0 50 1.4 -8.0 2.0 500 .23 Max. A %/C mV mV/C pA G %/C nF A/W nm nm V Degrees UNITS
W Hz cm Hz W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
23
VTB1012, 1013
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a flat window, dual lead TO-46 package. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.
CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2)


VTB1012
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = O, V = 10 mV H = 0, V = 0 365 nm 320 920 40 35 3.0 x 10-14 (Typ.) 4.2 x 10
12 (Typ.)
VTB1013
UNITS Max. .23 Min. 8 Typ. 13 .12 490 -2.0 100 20 7.0 -8.0 .31 .09 1100 320 920 2 40 35 5.9 x 10-15 (Typ.) 2.1 x 10 13 (Typ.) 1100 .23 Max. A %/C mV mV/C pA G %/C nF A/W nm nm V Degrees
Typ. 13 .12 490 -2.0 .25 -8.0 .31 .09
W Hz cm Hz W
24
VTB1012B, 1013B
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a flat window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.


VTB1012B
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 330 580 40 35 5.3 x 10-14 (Typ.) 2.4 x 10 12 (Typ.) 2 .25 -8.0 .31 720 330 580 40 35 1.1 x 10 -14 (Typ.) 1.2 x 10 13 (Typ.) 0.8 Typ. 1.3 .02 420 -2.0 100 7.0 -8.0 .31 720 .08 Max. Min. 0.8 Typ. 1.3 .02 420 -2.0 20 .08 Max. A %/C mV mV/C pA G %/C nF nm nm V Degrees
VTB1013B
UNITS
W Hz cm Hz W
25
VTB1112, 1113
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.
CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2)


VTB1112
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 15 3.0 x 10-14 (Typ.) 4.2 x 10 12 (Typ.) 2 .25 -8.0 .31 .19 1100 320 920 40 15 5.9 x 10-15 (Typ.) 2.1 x 10 13 (Typ.) 30 Typ. 60 .12 490 -2.0 100 7.0 -8.0 .31 .19 1100 .23 Max. Min. 30 Typ. 60 .12 490 -2.0 20 .23 Max. A %/C mV mV/C pA G %/C nF A/W nm nm V Degrees
VTB1113
UNITS
W Hz cm Hz W
26
VTB1112B, 1113B
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.


VTB1112B
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 330 580 40 15 5.3 x 10-14 (Typ.) 2.4 x 10 12 (Typ.) 2 .25 -8.0 .31 720 330 580 40 15 1.1 x 10-14 (Typ.) 1.2 x 10 13 (Typ.) 3.0 Typ. 6.0 .02 420 -2.0 100 7.0 -8.0 .31 720 .08 Max. Min. 3.0 Typ. 6.0 .02 420 -2.0 20 .08 Max. A %/C mV mV/C pA G %/C nF nm nm V Degrees
VTB1113B
UNITS
W Hz cm Hz W
27
VTB4051
PRODUCT DESCRIPTION
Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high shunt resistance and have good blue response.
CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2)


VTB4051
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 60 2.1 x 10-14 (Typ.) 1.8 x 10 13 (Typ.) .56 -8.0 3.0 .10 1100 100 Typ. 200 .12 490 -2.0 250 .23 Max. A %/C mV mV/C pA G %/C nF A/W nm nm V Degrees UNITS
W Hz cm Hz W
28
VTB5051
PRODUCT DESCRIPTION
Planar silicon photodiode in a flat window, dual lead TO-5 package. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.


VTB5051
W Hz cm Hz W
29
VTB5051B
PRODUCT DESCRIPTION
Planar silicon photodiode in a flat window, dual lead TO-5 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.


VTB5051B
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 330 580 40 50 3.7 x 10 -14 (Typ.) 1.0 x 1013 (Typ.) .56 -8.0 3.0 720 8 Typ. 13 .02 420 -2.0 250 .08 Max. A %/C mV mV/C pA G %/C nF nm nm V Degrees UNITS
W Hz cm Hz W
30
VTB5051J
PRODUCT DESCRIPTION
Planar silicon photodiode in a flat window, three lead TO-5 package. Chip is isolated from the case. The third lead allows the case to be grounded. These diodes have very high shunt resistance and have good blue response.
CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2)


VTB5051J
W Hz cm Hz W
31
VTB5051UV
PRODUCT DESCRIPTION
Planar silicon photodiode in a dual lead TO-5 package with a UV transmitting flat window. Chip is common to the case. These diodes have very high shunt resistance and have good blue response.


VTB5051UV
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 220 nm .038 200 920 40 50 2.1 x 10-14 (Typ.) 1.8 x 10 13 (Typ.) 1100 .56 -8.0 3.0 0.1 85 Typ. 130 .12 490 -2.0 250 .23 Max. A %/C mV mV/C pA G %/C nF A/W A/W nm nm V Degrees UNITS
W Hz cm Hz W
32
VTB5051UVJ
PRODUCT DESCRIPTION
Planar silicon photodiode in a three lead TO-5 package with a UV transmitting flat window. Chip is isolated from the case. The third lead allows case to be grounded. These diodes have very high shunt resistance and have good blue response.


VTB5051UVJ
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = -10 mV H = 0, V = -10 mV H = 0, V = 0 365 nm 220 nm .038 200 920 40 50 2.1 x 10-14 (Typ.) 1.8 x 10 13 (Typ.) 1100 .56 -8.0 3.0 0.1 85 Typ. 130 .12 490 -2.0 250 .23 Max. A %/C mV mV/C pA G %/C nF A/W A/W nm nm V Degrees UNITS
W Hz cm Hz W
33
VTB6061
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a flat window, dual lead TO-8 package. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.


VTB6061
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 55 5.7 x 10-14 (Typ.) 1.1 x 10 13 (Typ.) .10 -8.0 8.0 0.1 1100 260 Typ. 350 .12 490 -2.0 2.0 .23 Max. A %/C mV mV/C pA G %/C nF A/W nm nm V Degrees UNITS
W Hz cm Hz W
34
VTB6061B
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a flat window, dual lead TO-8 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.


VTB6061B
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 330 580 40 55 1.0 x 10-13 (Typ.) 6.1 x 10 12 (Typ.) .10 -8.0 8.0 720 26 Typ. 35 .02 420 -2.0 2.0 .08 Max. A %/C mV mV/C nA G %/C nF nm nm V Degrees UNITS
W Hz cm Hz W
35
VTB6061CIE
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a flat window, dual lead TO-8 package. This photodiode is a spectrally modified VTB6061B with a spectral response closely resembling that of the human eye, making it an ideal choice for photometric calibrations. Its high shunt impedance permits accurate measurement of low illuminations. ABSOLUTE MAXIMUM RATINGS Storage Temperature: -55C to 50C Operating Temperature: -55C to 50C
CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) VTB6061CIE vs HUMAN EYE RESPONSE

VTB6061CIE
SYMBOL CHARACTERISTIC TEST CONDITIONS Min. SP RSH TC RSH ID CJ p 1/2 NEP Photometric Sensitivity Shunt Resistance RSH Temperature Coefficient Dark Current Junction Capacitance Spectral Response - Peak Angular Resp. - 50% Resp. Pt. Noise Equivalent Power H = 1.0 fc H = 1.0 lux H = 0, V -10 mV H = 0, V -10 mV H = 0, VR = 2.0 V H = 0, V = 0 8.0 555 55 1.3 x 10-13 (Typ.) 75 7 Typ. 120 11 .10 -8.0 2.0 11 Max. nA/fc nA/lux G %/C nA nF nm Degrees UNITS
W Hz
36
VTB6061J
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a flat window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to be grounded. These diodes have very high shunt resistance and have good blue response.


VTB6061J
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 55 5.7 x 10-14 (Typ.) 1.1 x 10 13 (Typ.) .10 -8.0 8.0 0.1 1100 260 Typ. 350 .12 490 -2.0 2.0 .23 Max. A %/C mV mV/C nA G %/C nF A/W nm nm V Degrees UNITS
W Hz cm Hz W
37
VTB6061UV
Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting flat window. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.


VTB6061UV
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 220 nm .04 200 920 40 55 5.7 x 10 -14 (Typ.) 1.1 x 10 13 (Typ.) 1100 .10 -8.0 8.0 .10 260 Typ. 350 .12 490 -2.0 2.0 .23 Max. A %/C mV mV/C nA G %/C nF A/W A/W nm nm V Degrees UNITS
W Hz cm Hz W
38
VTB6061UVJ
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is grounded to case. These diodes have very high shunt resistance and have good blue response.


VTB6061UVJ
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 220 nm .04 200 920 40 55 5.7 x 10-14 (Typ.) 1.1 x 10 13 (Typ.) 1100 .10 -8.0 8.0 .10 260 Typ. 350 .12 490 -2.0 2.0 .23 Max. A %/C mV mV/C nA G %/C nF A/W A/W nm nm V Degrees UNITS
W Hz cm Hz W
39
VTB8341
PRODUCT DESCRIPTION
Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes have very high shunt resistance and have good blue response.


VTB8341
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 60 2.4 x 10 -14 (Typ.) 9.7 x 10 12 (Typ.) 1.4 -8.0 1.0 .10 1100 35 Typ. 60 .12 490 -2.0 100 .23 Max. A %/C mV mV/C pA G %/C nF A/W nm nm V Degrees UNITS
W Hz cm Hz W
40
VTB8440, 8441
CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2)
PRODUCT DESCRIPTION
Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of epoxy. These diodes have very high shunt resistance and have good blue response.


VTB8440
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 50 5.9 x 10-14 (Typ.) 3.9 x 10
12 (Typ.)
VTB8441
UNITS Max. .23 Min. 35 Typ. 45 .12 490 -2.0 2000 100 1.4 -8.0 1.0 .10 1100 320 920 2 40 50 1.3 x 10 -14 (Typ.) 1.7 x 10 13 (Typ.) 1100 .23 Max. A %/C mV mV/C pA G %/C nF A/W nm nm V Degrees
Typ. 45 .12 490 -2.0 .07 -8.0 1.0 .10
35
W Hz cm Hz W
41
VTB8440B, 8441B
CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2)
PRODUCT DESCRIPTION
Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.


VTB8440B
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 330 580 40 50 1.1 x 10-13 (Typ.) 2.2 x 10 12 (Typ.) 2 .07 -8.0 1.0 720 330 580 40 50 2.4 x 10 -14 (Typ.) 9.7 x 10 12 (Typ.) 4 Typ. 5 .02 420 -2.0 2000 1.4 -8.0 1.0 720 .08 Max. Min. 4 Typ. 5 .02 420 -2.0 100 .08 Max. A %/C mV mV/C pA G %/C nF nm nm V Degrees
VTB8441B
UNITS
W Hz cm Hz W
42
VTB9412, 9413
ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION

Small area planar silicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of clear epoxy. These diodes have very high shunt resistance and have good blue response. Storage Temperature: Operating Temperature: -20C to 75C -20C to 75C

VTB9412
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 50 3.0 x 10-14 (Typ.) 4.2 x 10
12 (Typ.)
VTB9413
UNITS
Typ. 13 .12 490 -2.0
Max.
.23
Min. 8
Typ. 13 .12 490 -2.0
Max.
A .23 %/C mV mV/C 20 pA G %/C nF A/W 1100 nm nm V Degrees
100 .25 -8.0 .31 .09 1100 320 920 2 40 50 5.9 x 10-15 (Typ.) 2.1 x 10 13 (Typ.) 7.0 -8.0 .31 .09
W Hz cm Hz W
43
VTB9412B, 9413B
CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2)
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.


VTB9412B
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 330 580 40 50 5.3 x 10-14 (Typ.) 2.4 x 10 12 (Typ.) 2 .25 -8.0 .31 720 330 580 40 50 1.1 x 10-14 (Typ.) 1.2 x 10 13 (Typ.) .8 Typ. 1.3 .02 420 -2.0 100 7.0 -8.0 .31 720 .08 Max. Min. .8 Typ. 1.3 .02 420 -2.0 20 .08 Max. A %/C mV mV/C pA G %/C nF nm nm V Degrees
VTB9413B
UNITS
W Hz cm Hz W
44
VTP Process Photodiodes

VTP PROCESS FAST RESPONSE, HIGH DARK RESISTANCE FEATURES
Visible to enhanced IR spectral range Integral visible rejection filters available Response @ 940 nm, 0.60 A/W, typical -1 to 2% linearity over 7 to 9 decades Low dark currents High shunt resistance High reverse voltage rating Low capacitance
PRODUCT DESCRIPTION
Photodiodes in this series have been designed for low junction capacitance. The lower the capacitance, the faster the response of the diode. Also, speed can be further increased by reverse biasing the diodes which lowers the capacitance even more. These diodes have excellent response in the IR region and are well matched to IR LEDs. Responsivity is categorized at 940 nm (GaAs LED). Some diodes are available in packages which incorporate a visible rejection filter effectively blocking any light below 700 nm. Diodes made with the VTP process are suitable for operation under reverse bias conditions but may be used in the photovoltaic mode. Typical reverse breakdown voltages are around 140 V. Low dark currents under reverse bias are also a feature of this series.
45

Absolute Spectral Response Rise/Fall Times - Non Saturated
Relative Dark Current vs. Temperature
Relative Junction Capacitance vs. Voltage (Reffered To Zero Bias)
Temperature Coefficient Of Light Current vs. Wavelength
46
VTP100
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light). These diodes exhibit low dark current and fast speed of response.

ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTP curves, page 46)

VTP100
SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 30 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 10 V H = 0, V = 10 mV H = 0, V = 3 V 940 nm @ Peak 725 925 140 70 2.5 x 10-14 (Typ.) 1.1 x 10 13 (Typ.) .036 .047 .50 1150 .25 50 35 Typ. 55 .24 300 -2.0 30 Max. A %/C mV mV/C nA G pF A/(W/cm2) A/W nm nm V Degrees UNITS
W Hz cm Hz W
47
VTP100C
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and fast speed of response.


VTP100C
SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 30 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 10 V H = 0, V = 10 mV H = 0, V = 3 V 940 nm @ Peak 400 925 140 70 9.0 x 10 -14 (Typ.) 3.0 x 10 12 (Typ.) .050 .55 1150 .25 50 50 Typ. 70 .20 350 -2.0 30 Max. A %/C mV mV/C nA G pF A/(W/cm2) A/W nm nm V Degrees UNITS
W Hz cm Hz W
48
VTP1012
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a flat window TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.


VTP1012
SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 50 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 50 V H = 0, V = 10 mV H = 0, V = 15 V 940 nm @ Peak 400 925 140 35 8.7 x 10-14 (Typ.) 1.5 x 10 12 (Typ.) .011 .55 1150 .5 6 10 Typ. 17 .20 350 -2.0 7 Max. A %/C mV mV/C nA G pF A/(W/cm2) A/W nm nm V Degrees UNITS
W Hz cm Hz W
49
VTP1112

Small area planar silicon photodiode in a lensed. dual lead TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response. Storage Temperature: Operating Temperature: -40C to 110C -40C to 110C

VTP1112
W Hz cm Hz W
50
VTP1188S
CASE 12 LENSED CERAMIC CHIP ACTIVE AREA: .017 in2 (1.1 mm2)

Large area planar silicon photodiode mounted on a two lead ceramic substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Storage Temperature: Operating Temperature: -20C to 75C -20C to 75C

VTP11188S
SYMBOL ISC TC ISC ISC VOC TC VOC ID RSH TC RSH CJ range p SR CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Short Circuit Current Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Sensitivity @ Peak TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K 100 W/cm2, 880 nm H = 100 fc, 2850 K 2850 K H = 0, VR = 10 mV H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V =0 V 400 925 .55 13 .33 -2.0 3 67 -11 .18 .30 1100 30 Typ. 200 .20 25 Max. A %/C A mV mV/C nA G %/C nF nm nm A/W UNITS
51
VTP1232
(Also available in infrared transmitting visible blocking version)
CASE 26 T-1 CHIP ACTIVE AREA: .0036 in2 (2.326 mm2)
PRODUCT DESCRIPTION
This photodiode features the largest detection area available in a clear, endlooking T-1 package. Combined with excellent dark current, it can fulfill the demands of many difficult applications.


VTP1232
SYMBOL ISC TC ISC Re VOC TC VOC ID CJ range p SR CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Responsivity Open Circuit Voltage VOC Temperature Coefficient Dark Current Junction Capacitance Spectral Application Range Spectral Response - Peak Sensitivity @ Peak TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K 880 nm H = 100 fc, 2850 K 2850 K H = 0, VR = 10 V H = 0, V = 0 V 400 920 0.60 .18 0.06 .42 -2.0 25 .30 1100 100 0.20 0.076 Typ. Max. A %/C A/(W/cm2) mV mV/C nA nF nm nm A/W UNITS
52
VTP3310LA
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and fast speed of response.
CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2)


VTP3310LA
SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 30 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 50 V H = 0, V = 10 mV H = 0, V = 3 V 940 nm @ Peak 400 925 140 20 1.9 x 10-13 (Typ.) 5.3 x 10 11 (Typ.) .015 .55 1150 10 25 24 Typ. 36 .20 350 -2.0 35 Max. A %/C mV mV/C nA G pF A/(W/cm2) A/W nm nm V Degrees UNITS
W Hz cm Hz W
53
VTP3410LA
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a long T1, endlooking package. The package material is infrared transmitting (blocking visible light). These diodes exhibit low dark current under reverse bias and fast speed of response.
CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2)


VTP3410LA
SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 30 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 50 V H = 0, V = 10 mV H = 0, V = 3 V 940 nm @ Peak 700 925 140 20 1.9 x 10 -13 (Typ.) 5.3 x 10 11 (Typ.) .013 .55 1150 10 25 15 Typ. 22 .26 350 -2.0 35 Max. A %/C mV mV/C nA G pF A/(W/cm2) A/W nm nm V Degrees UNITS
W Hz cm Hz W
54
VTP4085, 4085S
CASE 13 CERAMIC CHIP ACTIVE AREA: .032 in2 (21 mm2)
PRODUCT DESCRIPTION
Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits fast response time.


VTP4085
SYMBOL ISC TC ISC ISC VOC TC VOC ID RSH TC RSH CJ range p SR CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Short Circuit Current Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Sensitivity @ Peak TEST CONDITIONS Min. H = 100 fc, 2850 2850 K 100 W/cm2, 940 nm H = 100 fc, 2850 K 2850 K H = 0, VR = 100 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 V 400 925 .55 2.0 -11 .35 1100 400 925 .55 11.4 Typ. 200 .20 15 .33 -2.0 100 11.4 Max. Min. Typ. 200 .20 15 .33 -2.0 15 4.0 -11 .35 1100 50 Max. A %/C A mV mV/C nA M %/C nF nm nm A/W
VTP4085S
UNITS
55
VTP5050
PRODUCT DESCRIPTION
Planar silicon photodiode in a flat window, dual lead TO-5 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.


VTP5050
W Hz cm Hz W
56
VTP6060
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a flat window, dual lead TO-8 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.


VTP6060
SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 50 TEST CONDITIONS Min. H = 100 fc, 2850 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 50 V H = 0, V = 10 mV H = 0, V = 15 V 940 nm @ Peak 400 925 140 45 1.9 x 10-13 (Typ.) 2.3 x 10 12 (Typ.) .14 .55 1150 100 60 120 Typ. 200 .20 350 -2.0 35 Max. A %/C mV mV/C nA G pF A/(W/cm2) A/W nm nm V Degrees UNITS
W Hz cm Hz W
57
VTP7110
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a clear, lensed sidelooking package. These diodes exhibit low dark current under reverse bias and fast speed of response.
CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2)


VTP7110
SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 30 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 10 V H = 0, V = 10 mV H = 0, V = 3 V 940 nm @ Peak 400 925 140 58 1.9 x 10 -13 (Typ.) 5.3 x 10 11 (Typ.) .015 .55 1150 7 25 6 Typ. 9 .20 350 -2.0 35 Max. A %/C mV mV/C nA G pF A/(W/cm2) A/W nm nm V Degrees UNITS
W Hz cm Hz W
58
VTP7210
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a lensed sidelooking package. The package material filters out visible light but passes infrared. These diodes exhibit low dark current under reverse bias and fast speed of response.
CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2)


VTP7210
W Hz cm Hz W
59
VTP7840
PRODUCT DESCRIPTION
Planar silicon photodiode in a transfer molded, large lensed sidelooker package. The dark package material filters out visible light but passes infrared. These diodes exhibit low dark current under reverse bias and fast speed of response.
CASE 51 LENSED SIDELOOKER CHIP ACTIVE AREA: .0082 in2 (5.27 mm2)


VTP7840
SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Forward Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity @ 10 mA TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 10 V H = 0, V = 10 mV H = 0, V = 3 V @ Peak 725 925 1.0 48 5.3 x 10 -14 (Typ.) 5.1 x 10 12 (Typ.) .55 1150 0.25 40 50 Typ. 70 .20 325 -2.0 20 nA G pF A/W nm nm V Degrees Max. A %/C mV UNITS
W Hz cm Hz W
60
VTP8350
PRODUCT DESCRIPTION
Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.


VTP8350
W Hz cm Hz W
61
VTP8440
PRODUCT DESCRIPTION
Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.


VTP8440
W Hz cm Hz W
62
VTP8551
CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2)
PRODUCT DESCRIPTION
Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these devices side by side. These diodes exhibit low dark current under reverse bias and fast speed of response.


VTP8551
W Hz cm Hz W
63
VTP8651
CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2)
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic, infrared transmitting package. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning devices side by side. These diodes exhibit low dark current under reverse bias and fast speed of response.


VTP8651
W Hz cm Hz W
64
VTP9412
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.


VTP9412
W Hz cm Hz W
65
VTS Process Photodiodes

VTS PROCESS LOW CAPACITANCE, LARGE AREA PHOTODIODE FEATURES
Visible to IR spectral range Excellent QE - 400 to 1100 nm Guaranteed 400 nm response Response @ 940 nm, 0.60 A/W, typical Useable with visible and IR LEDs Better than 1% linearity over four decades of illumination Moderate shunt resistance Low capacitance Fast response Choice of three styles: bare chip 6" flying leads 1" anode buss wire Large area cells Solderable contacts
PRODUCT DESCRIPTION
This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for detecting light from a variety of sources such as LEDs, IREDs, flashtubes, incandescent lamps, lasers, etc. Improved shunt resistance minimizes amplifier offset and drift in high gain systems. The solderable contact system on these photodiodes provides a cost effective design solution for many applications.
Part Numbering System For VTS Process Unmounted Cells VTS__XX

Last two digits identify chip size and process
VTS20XX VTS30XX
Bare chip with no wires or coating. Chip with red and black AWG#30, insulated, flexible wires soldered to the contacts. Chip with a buss wire soldered to the topside contact.
VTS31XX
66

Absolute Spectral Response Angular Response
Relative Junction Capacitance vs. Bias Voltage
Temperature Coefficient Of Light Current vs. Wavelength
Relative Dark Resistance vs. Temperature (Referred To 25C)
67

PRODUCT DESCRIPTION
This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for detecting light from a variety of sources such as LEDs, IREDs, flashtubes, incandescent lamps, lasers, etc. Improved shunt resistance minimizes amplifier offset and drift in high gain systems. The solderable contact system on these photodiodes provides a cost effective design solution for many applications. ABSOLUTE MAXIMUM RATINGS Storage Temperature: -40C to 150C -40C to 105C Operating Temperature: -40C to 125C -40C to 105C Reverse Voltage: Series 20, 31 Series 30
DIMENSIONS
VTS_ _80, 82, 85
CASE 44A ANODE (ACTIVE) SURFACE SHOWN CATHODE IS BACKSIDE

VTS__80 .800 (20.32) .800 (20.32) .6072 (3922) VTS__82 .400 (10.16) .400 (0.16) .144 2 (932) VTS__85 .200 (5.08) .200 (5.08) .032 2 (212)
Series 20, 31 Series 30
L W
6.0 Volts
ACTIVE AREA
ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTS curves, page 67)

SYMBOL ISC TC ISC ID TC ID RSH CJ SR Re TC VOC tR/tF VOC TC VOC CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Dark Current ID Temp. Coefficient Shunt Resistance Junction Capacitance Sensitivity Responsivity Sensitivity @ Peak Response Time @ 1 k Load Open Circuit Voltage VOC Temperature Coefficient TEST CONDITIONS
Min.
VTS__80
Typ. Max. Min.
VTS__82
Typ. Max. Min.
VTS__85
Typ. Max.
UNITS mA %/C 0.1 A %/C M nF A/W A/(W/cm2) A/W sec Volts mV/C
H = 1000 lux, 2850 K H = 1000 Lux, 2850 K H = 0, VR = 100 mV H = 0, VR = 100 mV H = 0, VR = 10 mV H = 0, V = 0 V, 1 MHz @ 400 nm 400 nm, 0.18 A/W 925 nm VR = 1 V, 830 nm H = 1000 Lux, 2850 K H = 1000 Lux, 2850 K
2.30
3.00 0.20 0.2 +11 0.3 7.5 1.0
0.55
0.69 0.20 0.05 +11 1.2 1.75 0.2
0.13
0.16 0.20 0.02 +11 3.0 0.50
.18
0.20 0.70 0.60 13
0.18
0.20 0.16 0.60 3.4
0.18
0.20 0.04 0.60 1.2
0.25
0.45 -2.6
0.25
0.45 -2.6
0.25
0.45 -2.6
68

PRODUCT DESCRIPTION
This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for detecting light from a variety of sources such as LEDs, IREDs, flashtubes, incandescent lamps, lasers, etc. Improved shunt resistance minimizes amplifier offset and drift in high gain systems. The solderable contact system on these photodiodes provides a cost effective design solution for many applications. ABSOLUTE MAXIMUM RATINGS Storage Temperature: -40C to 150C -40C to 105C Operating Temperature: -40C to 125C -40C to 105C Reverse Voltage: Series 20, 31 Series 30 Series 20, 31 Series 30 6.0 Volts
DIMENSIONS L W ACTIVE AREA
VTS__81, 83, 84
CASE 44C ANODE (ACTIVE) SURFACE SHOWN CATHODE IS BACKSIDE

VTS__81 .800 (20.32) .400 (10.16) .2902 (1872) VTS__83 .800 (20.32) .200 (5.08) .1322 (85 2) VTS__84 .400 (10.16) .200 (5.08) .0652 (422)

SYMBOL ISC TC ISC ID TC ID RSH CJ SR Re TC VOC tR/tF VOC TC VOC CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Dark Current ID Temp. Coefficient Shunt Resistance Junction Capacitance Sensitivity Responsivity Sensitivity @ Peak Response Time @ 1 k Load Open Circuit Voltage VOC Temperature Coefficient TEST CONDITIONS
Min.
VTS__81
Typ. Max. Min.
VTS__83
Typ. Max. Min.
VTS__84
Typ. Max.
UNITS mA %/C 100 nA %/C M nF A/W A/(W/cm2) A/W sec Volts mV/C
H = 1000 lux, 2850 K H = 1000 Lux, 2850 K H = 0, VR = 100 mV H = 0, VR = 100 mV H = 0, VR = 10 mV H = 0, V = 0 V, 1 MHz @ 400 nm 400 nm, 0.18 A/W 925 nm VR = 1 V, 830 nm H = 1000 Lux, 2850 K H = 1000 Lux, 2850 K
1.10
1.50 0.20 100 +11 0.6 3.5 500
0.5
0.64 .20 50 +11 1.2 1.75 200
0.25
0.33 .20 40 +11 1.5 1.0
.18
0.20 0.34 0.60 6.4
0.18
0.20 0.15 0.60 3.4
0.18
0.20 0.07 0.60 1.8
0.25
0.45 -2.6
0.25
0.45 -2.6
0.25
0.45 -2.6
69

PRODUCT DESCRIPTION
This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for detecting light from a variety of sources such as LEDs, IREDs, flashtubes, incandescent lamps, lasers, etc. Improved shunt resistance minimizes amplifier offset and drift in high gain systems. The solderable contact system on these photodiodes provides a cost effective design solution for many applications. ABSOLUTE MAXIMUM RATINGS Storage Temperature: -40C to 150C -40C to 105C Operating Temperature: -40C to 125C -40C to 105C Series 20, 31 Series 30 Series 20, 31 Series 30
VTS__86
CASE 44B ANODE (ACTIVE) SURFACE SHOWN CATHODE IS BACKSIDE

DIMENSIONS L W ACTIVE AREA VTS__86 .100 (2.54) .200 (5.08) .015 2 (102)

VTS__86
SYMBOL ISC TC ISC ID TC ID RSH CJ SR Re TC VOC tR/tF VOC TC VOC CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Dark Current ID Temp. Coefficient Shunt Resistance Junction Capacitance Sensitivity Responsivity Sensitivity @ Peak Response Time @ 1 k Load Open Circuit Voltage VOC Temperature Coefficient TEST CONDITIONS Min. H = 1000 lux, 2850 K H = 1000 Lux, 2850 K H = 0, VR = 100 mV H = 0, VR = 100 mV H = 0, VR = 10 mV H = 0, V = 0 V, 1 MHz @ 400 nm 400 nm, 0.18 A/W 925 nm VR = 1 V, 830 nm H = 1000 Lux, 2850 K H = 1000 Lux, 2850 K 0.25 .18 60 Typ. 80 .20 10 +11 6.0 0.25 0.20 0.02 0.60 0.75 0.45 -2.6 100 Max. A %/C nA %/C M nF A/W A/(W/cm2) A/W sec Volts mV/C UNITS
70
Alternate Source / Second Source Photodiodes
The following section consists of detectors which have found use as drop in replacements for competitive devices. PerkinElmer Optoelectonics nearest equivalent devices are selected on the basis of general similarity of electro-optical characteristics and mechanical configuration. Interchangeability in any particular application is not guaranteed. Suitability should be determined by the customers own evaluation. Contact PerkinElmer if you need assistance.
71
Alternate Source/ Second Source Photodiodes
VTD31AA
(CLD31AA INDUSTRY EQUIVALENT)
PRODUCT DESCRIPTION
Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.

ELECTRO-OPTICAL CHARACTERISTICS @ 25C

VTD31AA
SYMBOL ISC TC ISC VOC TC VOC ID CJ SR range p VBR 1/2 CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp.-50% Resp. Pt. 5 60 TEST CONDITIONS Min. H = 5 mW/cm2, 2850 K 2850 K H = 5 mW/cm2, 2850 K 2850 K H = 0, VR = 15 V H = 0, V = 0 V @ Peak 400 860 .55 1150 150 .20 350 -2.0 50 500 Typ. Max. 225 A %/C mV mV/C nA pF A/W nm nm V Degrees UNITS
72
VTD34
(BPW34 INDUSTRY EQUIVALENT)
CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2)
PRODUCT DESCRIPTION
Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these devices side by side. These photodiodes are designed to provide excellent sensitivity at low levels of irradiance.


VTD34
SYMBOL ISC TC ISC VOC TC VOC ID CJ tR/tF SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Junction Capacitance Rise/Fall Time @ 1 k Lead Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp.-50% Resp. Pt. Noise Equivalent Power Specific Detectivity 40 50 4.8 x 10 -14 5.7 x 1012 TEST CONDITIONS Min. 1000 Lux, 2850 K 2850 K H = 1000 Lux, 2850 K 2850 K H = 0, VR = 10 V @ 1 MHz, VR = 0 V VR = 10 V, 833 nm @ Peak 400 900 300 50 Typ. 70 .20 365 -2.0 2 60 50 0.60 1100 30 Max. A %/C mV mV/C nA pF nsec A/W nm nm V Degrees UNITS
W Hz cm Hz W
73
VTD34F
(BPW34F INDUSTRY EQUIVALENT)
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic package. The package material filters out visible light but passes infrared. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these devices side by side. The photodiodes are designed to provide excellent sensitivity at low levels of irradiance.
CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2)


VTD34F
SYMBOL Re VOC TC VOC ID CJ tR/tF SR range p VBR 1/2 NEP D* CHARACTERISTIC Responsivity Open Circuit Voltage VOC Temperature Coefficient Dark Current Junction Capacitance Rise/Fall Time @ 1 k Lead Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp.-50% Resp. Pt. Noise Equivalent Power Specific Detectivity 40 50 4.8 x 10-14 5.7 x 1012 TEST CONDITIONS Min. 0.5 mW/cm2, 940 nm 0.5 mW/cm2, 940 2850 K H = 0, VR = 10 V @ 1 MHz, VR = 0 V VR = 10 V, 833 nm @ Peak 725 940 nm 15 275 350 -2.0 2 60 50 0.60 1150 30 Typ. Max. A mV mV/C nA pF nsec A/W nm nm V Degrees UNITS
W Hz cm Hz W
74
VTD205
(SFH205 INDUSTRY EQUIVALENT)
CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2)
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a cast epoxy sidelooker, similar in outline to the TO-92 package. The package material filters out all visible light but passes infrared. These diodes exhibit low dark current under reverse bias and fast speed of response.


VTD205
SYMBOL ISC TC ISC VOC TC VOC ID CJ tR/tF SR range p VBR 1/2 CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Junction Capacitance Rise/Fall Time @ RL = 50 Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp.-50% Resp. Pt. 20 TEST CONDITIONS Min. 940 nm, H = 0.5 mW/cm2 2856 K 940 nm, H = 0.5 mW/cm2 2856 K H = 0, VR = 10 V H = 0, VR = 0 v, 1 MHz VR = 5 V, 850 nm @ Peak 800 925 50 60 250 15 Typ. 25 .20 350 -2.6 2 72 20 0.6 1100 30 Max. A %/C mV mV/C nA pF nsec A/W nm nm V Degrees UNITS
75
VTD205K
(SFH205K INDUSTRY EQUIVALENT)
CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2)
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.


VTD205K
SYMBOL ISC TC ISC VOC TC VOC ID CJ tR/tF SR range p VBR 1/2 CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Junction Capacitance Rise/Fall Time @ RL = 50 Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp.-50% Resp. Pt. 20 TEST CONDITIONS Min. 1000 Lux, 2850 K 2856 K 940 nm, H = 0.5 mW/cm2 2856 K H = 0, VR = 10 V H = 0, VR = 0V, 1 MHz VR = 5 V, 850 nm @ Peak 400 925 50 60 310 50 Typ. 80 .20 365 -2.6 2 72 20 0.6 1100 30 Max. A %/C mV mV/C nA pF nsec A/W nm nm V Degrees UNITS
76
VTD206
(SFH206 INDUSTRY EQUIVALENT)
CASE 61 TO-92 TYPE (FLAT LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2)
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a cast epoxy sidelooker, similar in outline to the TO-92 package. The package material filters out all visible light but passes infrared. These diodes exhibit low dark current under reverse bias and fast speed of response.


VTD206
SYMBOL ISC TC ISC VOC TC VOC ID CJ tR/tF SR range p VBR 1/2 CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Junction Capacitance Rise/Fall Time @ RL = 50 Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp.-50% Resp. Pt. 20 TEST CONDITIONS Min. 940 nm, H = 0.5 mW/cm2 2856 K 940 nm, H = 0.5 mW/cm2 2856 K H = 0, VR = 10 V H = 0, VR = 0 V, 1 MHz VR = 5 V, 850 nm @ Peak 750 925 50 60 250 15 Typ. 25 .20 350 -2.6 2 72 20 0.6 1100 30 Max. A %/C mV mV/C nA pF nsec A/W nm nm V Degrees UNITS
77
VTD206K
(SFH206K INDUSTRY EQUIVALENT)
CASE 61 TO-92 TYPE (FLAT LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2)
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.


VTD206K
SYMBOL ISC TC ISC VOC TC VOC ID CJ tR/tF SR range p VBR 1/2 CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Junction Capacitance Rise/Fall Time @ RL = 50 Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp.-50% Resp. Pt. 20 TEST CONDITIONS Min. 1000 Lux, 2856 K 2856 K 940 nm, H = 0.5 mW/cm2 2856 K H = 0, VR = 10 V H = 0, VR = 0 V, 1 MHz VR = 5 V, 850 nm @ Peak 400 925 50 60 310 50 Typ. 80 .20 365 -2.6 2 72 20 0.6 1100 30 Max. A %/C mV mV/C nA pF nsec A/W nm nm V Degrees UNITS
78
VTH2090
(S1723-04 INDUSTRY EQUIVALENT)
PRODUCT DESCRIPTION
This PIN photodiode consists of a chip with a 9.2 x 9.2 mm active area mounted in a black ceramic package with an epoxy window. These devices are ideal for applications requiring a fast, large area, high detectivity device.
CASE 53 BLACK CERAMIC CHIP ACTIVE AREA: .131 in2 (84.64 mm2) SPECTRAL RESPONSE

Maximum Current: Max. Power Dissipation: Max. Reverse Voltage: Storage & Operating Temp.: 2 mA 100 mW 50 Volts, Peak -40C to 100C

VTH2090
SYMBOL SR CHARACTERISTIC Radiant Sensitivity TEST CONDITIONS Min. 480 nm 540 nm 633 nm 940 nm ISC ID TC ID CJ tR/tF range p NEP D* Short Circuit Current Dark Current ID Temperature Coefficient Junction Capacitance Rise/Fall Time Spectral Application Range Spectral Response - Peak Noise Equivalent Power Specific Detectivity H = 0, VR = 30 V (10% to 90%) 400 960 4 x 10
-14 (Typ.)
UNITS Typ. 0.25 0.30 0.40 0.60 65 80 10 15 70 15 1100 A nA %/C pF nsec nm nm Max. A/W
100 Lux H = 0, VR = 30 V
W Hz cm Hz W
4 x 10 13 (Typ.)
79
Phototransistor and IRED Part Number Index

Phototransistor Part No. Page Infrared Emitter Part No. Page
VTT1015 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .102 VTT1016 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .102 VTT1017 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .102 VTT1115 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .103 VTT1116 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .103 VTT1117 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .103 VTT1212 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .99 VTT1214 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .99 VTT1222W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .93 VTT1223W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .93 VTT1225 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .94 VTT1226 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .94 VTT1227 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .94 VTT3323LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .95 VTT3324LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .95 VTT3325LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .95 VTT3423LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .96 VTT3424LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .96 VTT3425LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .96 VTT7122 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .97 VTT7123 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .97 VTT7125 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .97 VTT7222 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .98 VTT7223 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .98 VTT7225 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .98 VTT9002 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 VTT9003 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 VTT9102 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .101 VTT9103 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .101
VTE1013 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126 VTE1063 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111 VTE1113 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127 VTE1163 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 VTE1261 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 VTE1262 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 VTE1281-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 VTE1281-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 VTE1281F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 VTE1281W-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 VTE1281W-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 VTE1285 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 VTE1291-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 VTE1291-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 VTE1291W-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 VTE1291W-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 VTE1295 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 VTE3322LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 VTE3324LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 VTE3372LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 VTE3374LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 VTE7172 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122 VTE7173 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
80
Phototransistor and IRED Selection Guide

VTT1015 VTT1016 VTT1017 CASE 1 TO-46 FLAT WINDOW
.050" x .050" NPN Phototransistor Hermetic Case 35 Acceptance Angle
102
VTT1115 VTT1116 VTT1117 CASE 2 TO-46 LENSED VTE7172 VTE7173 VTT7122 VTT7123 VTT7125 VTT7222 VTT7223 VTT7225
.050" x .050" NPN Phototransistor Hermetic Case 15 Acceptance Angle
103
.011" x .011" GaAIAs IRED
122
.025" x .025" NPN Phototransistor .025" x .025" NPN Phototransistor Infrared Transmitting
97
98
CASE 7
LATERAL
VTT9002 VTT9003
.040" x .040" NPN Phototransistor 50 Acceptance Angle
100
CASE 8
TO-106 CERAMIC, FLAT
VTT9102 VTT9103
.040" x .040" NPN Phototransistor 40 Acceptance Angle
101
CASE 9
TO-106 CERAMIC, LENSED VTE1113 GaAs IRED Hermetic Case 10 Emission Angle GaAIAs IRED Hermetic Case 10 Emission Angle 127
VTE1163 CASE 24 TO-46 LENSED
112
81

PACKAGE OUTLINE inch (mm) PART NO. VTE1013 FEATURES GaAs IRED Hermetic Case 35 Emission Angle GaAIAs IRED Hermetic Case 35 Emission Angle GaAIAs IRED 10 Emission Angle GaAIAs IRED 12 Emission Angle GaAIAs IRED 12 Emission Angle .040" x .040" NPN Phototransistor 10 Acceptance Angle .025" x .025" NPN Phototransistor 5 Acceptance Angle PAGE 126
VTE1063 CASE 24A TO-46 FLAT WINDOW VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1291-1 VTE1291-2 VTT1212 VTT1214 VTT1225 VTT1226 VTT1227
111
113 114 118
99
CASE 26
T-1 (5 mm)
94
VTE1281F
GaAIAs IRED 45 Emission Angle
115
CASE 26F
T-1 (5 mm) FLAT VTE1281W-1 VTE1281W-2 GaAIAs IRED 25 Emission Angle
116
VTE1291W-1 VTE1291W-2
GaAIAs IRED 25 Emission Angle .025" x .025" NPN Phototransistor 40 Acceptance Angle
119
CASE 26W
T-1 (5 mm) WIDE ANGLE
VTT1222W VTT1223W
93
82

PACKAGE OUTLINE inch (mm) PART NO. VTE3322LA VTE3324LA FEATURES GaAs IRED 10 Emission Angle PAGE
128
VTE3372LA VTE3374LA VTT3323LA VTT3324LA VTT3325LA CASE 50A LONG T-1 (3 mm) VTT3423LA VTT3424LA VTT3425LA
GaAIAs IRED 10 Emission Angle .025" x .025" NPN Phototransistor 10 Acceptance Angle .025" x .025" NPN Phototransistor 10 Acceptance Angle Infrared Transmitting
121
95
96
VTE1285
117
VTE1295 CASE 62 T-1 (5 mm) BULLET
120
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Typical Phototransistor and IRED Applications

Why Use Phototransistors?
Phototransistors are solid state light detectors that possess internal gain. This makes them much more sensitive than photodiodes of comparably sized area. These devices can be used to provide either an analog or digital output signal. This family of detectors offers the following general characteristics and features: Low cost visible and near-IR photodetection Available with gains from 100 to over 1500 Moderately fast response times Available in a wide range of packages including epoxy coated, transfer molded, cast, hermetic packages, and in chip form Usable with almost any visible or near infrared light source such as IREDs; neon, fluorescent, incandescent bulbs; lasers; flame sources; sunlight; etc. Same general electrical characteristics as familiar signal transistors (except that incident light replaces base drive current)
Why Use IREDs?

IREDs are solid state light sources which emit light in the near-IR part of the spectrum. Because they emit at wavelengths which provide a close match to the peak spectral response of silicon photodetectors, both GaAs and GaAIAs IREDs are often used with phototransistors. Key characteristics and features of these light sources include: Long operating lifetimes Low power consumption, compatible with solid state electronics Narrow band of emitted wavelengths Minimal generation of heat Available in a wide range of packages including transfer molded, cast, and hermetic packages Low cost
84

Applications
Phototransistors can be used as ambient light detectors. When used with a controllable light source, typically an IRED, they are often employed as the detector element for optoisolators and transmissive or reflective optical switches. Typical configurations include:
Optoisolator The optoisolator is similar to a transformer in that the output is electronically isolated from the input.
Optical Switch An object is detected when it enters the gap of the optical switch and blocks the light path between the emitter and detector.
Retro Sensor The retro sensor detects the presence of an object by generating light and then looking for its reflectance off of the object to be sensed.
Phototransistors and IREDs have been used in the following applications. Computer/Business Equipment Write protect control - floppy drive Margin controls - printers Monitor paper position - copiers Monitor paper stack height - copiers Consumer Coin counters Lottery card readers Position sensors - joysticks Remote controllers - toys, appliances, audio/visual equipment Games - laser tag Camera shutter control
Industrial LED light source - light pens Security systems Safety shields Encoders - measure speed and direction Photoelectric controls Remote residential electric meter reading
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Fundamental Circuit Approaches
Basic Circuits
More Output Current Capability
More Voltage Switching Capability
Reducing Dark Current
86
What are Phototransistors?

Phototransistors are photodiode-amplifier combinations integrated within a single silicon chip. These combinations are put together in order to overcome the major limitation of photodiodes: unity gain. Many applications demand a greater output signal from the photodetector than can be generated by a photodiode alone. While the signal from a photodiode can always be amplified through use of an external op-amp or other circuitry, this approach is often not as practical or as cost effective as the use of phototransistors. The phototransistor can be viewed as a photodiode whose output photocurrent is fed into the base of a conventional small signal transistor. While not required for operation of the device as a photodetector, a base connection is often provided allowing the designer the option of using base current to bias the transistor. The typical gain of a phototransistor can range from 100 to over 1500.
Phototransistor Collector Current (lC) versus Collector to Emitter Voltage (VCE) as a function in incident energy
The structure of a phototransistor is very similar to that of a photodiode. In fact, while not optimized for this mode of operation, the collector-base junction of a phototransistor can be used as a photodiode with fairly good results. The major structural difference is that the phototransistor has two junctions compared with one for the photodiode.
Phototransistor Equivalent Circuit
To demonstrate the relative sensitivity of these different types of detectors, compare the output currents that could be expected from a .025" x .025" detector chip exposed to .05 mW/cm2 of illumination.
DETECTOR Photodiode Phototransistor GAIN 1x 500x OUTPUT CURRENT 100nA 50 A
The current-voltage characteristics of the phototransistor are similar to NPN signal transistors, with the major exception that incident light provides the base drive current.
Phototransistor Chip Top View and Cut Away View
87
Characteristics of Phototransistors
An equivalent circuit for a phototransistor consists of a photodiode feeding its output photocurrent into the base of a small signal transistor. Based on this model it is not surprising that phototransistors display some of the characteristics of both types of devices. Spectral Response The output of a phototransistor is dependent upon the wavelength of incident light. These devices respond to light over a road range of wavelengths from the near UV, though the visible, and into the near IR part of the spectrum. Unless optical filters are used, the peak spectral response is in the near IR at approximately 840 nm. The peak response is at a somewhat shorter wavelength than that of a typical photodiode. This is because the diffused junctions of a phototransistor are formed in epitaxial rather than crystal grown silicon wafers. Phototransistors will respond to fluorescent or incandescent light sources but display better optical coupling efficiencies when matched with IREDs. Sensitivity For a given light source and illumination level, the output of a phototransistor is defined by the area of the exposed collector-base junction and the dc current gain of the transistor. The collector-base junction of the phototransistor functions as a photodiode generating a photocurrent which is fed into the base of the transistor section. Thus, like the case for a photodiode, doubling the size of the base region doubles the amount of generated base photocurrent. This photocurrent (lP) then gets amplified by the dc current gain of the transistor. For the case where no external base drive current is applied: lC = hFE (lP) where:
Transistor Gain vs Light Intensity
As is the case with signal transistors, hFE is not a constant but varies with base drive, bias voltage, and temperature. At low light levels the gain starts out small but increases with increasing light (or base drive) until a peak is reached. As the light level is further increased the gain of the phototransistor starts to decrease.
HFE will also increase with increasing values for VCE. The current-voltage characteristics of a typical transistor will demonstrate this effect. For a constant base drive the curve shows a positive slope with increasing voltage. It is clear the current gain at collector-emitter voltage VCE2 is greater than the current gain at VCE1.
lC = collector current hFE = DC current gain lP = photocurrent

Current vs Voltage Curves
The current gain will also increase with increasing temperature.
88
Linearity Unlike a photodiode whose output is linear with respect to incident light over 7 to 9 decades of light intensity, the collector current (lC) of a phototransistor is linear for only 3 to 4 decades of illumination. The prime reason for this limitation is that the dc gain (hFE) of the phototransistor is a function of collector current (lC) which in turn is determined by the base drive. The base drive may be in the form of a base drive current or incident light. parameter which indicates how closely the photodetector approximates a closed switch. This is because VCE(SAT) is the voltage dropped across the detector when it is in its on state. VCE(SAT) is usually given as the maximum collector-emitter voltage allowed at a given light intensity and for a specified value of collector current. PerkinElmer tests their detectors for VCE(SAT) at a light level of 400 fc and with 1 mA of collector current flowing through the device. Stock phototransistors are selected according to a set of specifications where VCE(SAT) can range from 0.25V (max) to 0.55V (max) depending on the device. Dark Current - (lD) When the phototransistor is placed in the dark and a voltage is applied from collector to emitter, a certain amount of current will flow. This current is called the dark current (lD). This current consists of the leakage current of the collector-base junction multiplied by the dc current gain of the transistor. The presence of this current prevents the phototransistor from being considered completely off, or being an ideal open switch. The dark current is specified as the maximum collector current permitted to flow at a given collector-emitter test voltage. The dark current is a function of the applied collector-emitter voltage and ambient temperature. Photodetector Relative Linearity While photodiodes are the detector of choice when linear output versus light intensity is extremely important, as in light intensity measuring equipment, the phototransistor comes into its own when the application requires a photodetector to act like a switch. When light is present, a phototransistor can be considered on, a condition during which they are capable of sinking a fair amount of current. When the light is removed these photodetectors enter an off state and function electrically as open switches. How well phototransistors function as switches is covered in the next few sections. Collector-Emitter Saturation Voltage - VCE(SAT) By definition, saturation is the condition in which both the emitter-base and the collector-base junctions of a phototransistor become forward based. From a practical standpoint the collector-emitter saturation voltage, VCE(SAT), is the PerkinElmers standard phototransistors are tested at a VCE applied voltage of either 5V, 10V or 20V depending on the device. Phototransistors are tested to dark current limits which range from 10 nA to 100 nA. Dark current is temperature dependent, increasing with increasing temperature. It is usually specified at 25C. Breakdown Voltages - (VBR) Phototransistors must be properly biased in order to operate. However, when voltages are applied to the phototransistor, care must be taken not to exceed the collector-emitter breakdown voltage (VBRECO). Exceeding the breakdown voltage can cause permanent damage to the phototransistor. Typical values for VBRECO range from 20V to 50V. Typical values for VBRECO range from 4V to 6V. The breakdown voltages are 100% screened parameters.
89
Speed of Response The speed of response of a phototransistor is dominated almost totally by the capacitance of the collector-base junction and the value of the load resistance. These dominate due to the Miller Effect which multiplies the value of the RC time constant by the current gain of the phototransistor. This leads to the general rule that for devices with the same active area, the higher the gain of the photodetector, the slower will be its speed of response. A phototransistor takes a certain amount of time to respond to sudden changes in light intensity. This response time is usually expressed by the rise time (tR) and fall time (tF) of the detector where: tR - The time required for the output to rise from 10% to 90% of its onstate value. tF - The time required for the output to fall from 90% to 10% of its onstate value. As long as the light source driving the phototransistor is not intense enough to cause optical saturation, characterized by the storage of excessive amounts of charge carriers in the base region, risetime equals falltime. If optical saturation occurs, tF can become much larger than tR. PerkinElmer tests the tR and tF of its phototransistors at an lC = 1.0 mA and with a 100 ohm load resistor in series with the detector. Phototransistors display tR and tF times in a range of 1 sec to 10 sec. Selecting a Photodetector Each application is a unique combination of circuit requirements, light intensity levels, wavelengths, operating environment, and cost considerations. PerkinElmer offers a broad range of catalog phototransistors to help you with these design tradeoffs. The charts presented below are intended to give some general guidelines and tradeoffs for selecting the proper detector for your application. Size of Detector Chip
SMALL SIZE LOWER FASTER LOWER LOWER PARAMETER SENSITIVITY SPEED OF RESPONSE DARK CURRENT COST LARGE SIZE HIGHER SLOWER HIGHER HIGHER
Gain (HFE)
LOW GAIN LOWER FASTER LOWER SMALLER LOWER PARAMETER SENSITIVITY SPEED OF RESPONSE DARK CURRENT TEMP. COEF. COST HIGH GAIN HIGHER SLOWER HIGHER LARGER HIGHER
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Phototransistor Typical Characteristic Curves

PerkinElmer Optoelectronics phototransistors are intended to service a wide range of applications with reliable, versatile, and well designed devices. We offer different chip sizes, specifications, various industry standard cases, lensed or unlensed, in both hermetic and plastic packages to provide a full range of options for the design engineer. With the added benefit of favorable prices, these products should meet the needs of any design.
Dark Current vs. Temperature (Referred To 25C) Relative Spectral Response (Referred To Peak Response Of Clear Case)
Relative Output vs. Illumination (Normalized At 100 fc)
Response Time (For 25T Type Phototransistors)
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Phototransistor Typical Characteristic Curves

Response Time (For 40T Type Phototransistors) Response Time (For 50T Type Phototransistors)
Angular Response Coax Packages
Angular Response Molded Epoxy Packages
Angular Response 10-46 Packages
Angular Response Ceramic Packages
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.025" NPN Phototransistors

Clear T-1 (5 mm) Plastic Package
VTT1222W, 23W
CASE 26W T-1 (5 mm) WIDE ANGLE CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor mounted in a 5 mm diameter lensed, end looking, transparent plastic package. Detectors in this series have a half power acceptance angle (1/2) of 40. These devices are spectrally and mechanically matched to the VTE12xxW series of IREDs.

(@ 25C unless otherwise noted)
Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.)
-40C to 100C -40C to 100C 50 mW 0.71 mW/C 25 mA 260C
ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also typical curves, pages 91-92)

Light Current lC mA Min. VTT1222W VTT1223W 1.9 1.5 Max. H fc (mW/cm2) VCE = 5.0 V 100 (5) 100 (5) Dark Current lCEO H=0 (nA) Max. 10 10 VCE (Volts) 20 20 Collector Breakdown VBR(CEO) lC = 100 A H= 0 Volts, Min. 50 40 Emitter Breakdown VBR(ECO) lE = 100 A H=0 Volts, Min. 6.0 6.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.25 0.25 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 sec, Typ. 2.0 3.0 Angular Response 1/2
Part Number
Typ. 40 40
Refer to General Product Notes, page 2.
93

VTT1225, 26, 27
CASE 26 T-1 (5 mm) CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor mounted in a 5 mm diameter lensed, end looking, transparent plastic package. Detectors in this series have a half power acceptance angle (1/2) of 5. These devices are spectrally and mechanically matched to the VTE12xx series of IREDs.


Light Current lC mA Min. VTT1225 VTT1226 VTT1227 4.0 7.5 12.0 Max. H fc (mW/cm2) VCE = 5.0 V 100 (5) 100 (5) 100 (5) Dark Current lCEO H=0 (nA) Max. 100 100 100 VCE (Volts) 10 10 10 Collector Breakdown VBR(CEO) lC = 100 A H=0 Volts, Min. 30 30 30 Emitter Breakdown VBR(ECO) lE = 100 A H=0 Volts, Min. 5.0 5.0 5.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.25 0.25 0.25 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 sec, Typ. 1.5 3.0 4.0 Angular Response 1/2
Part Number
Typ. 5 5 5
94

Clear Long T-1 (3 mm) Plastic Package
VTT3323LA, 4LA, 5LA
CASE 50A LONG T-1 (3 mm) CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor mounted in a 3 mm diameter, lensed, end looking, transparent plastic package. These devices are spectrally and mechanically matched to the VTE337xLA series of IREDs.


Light Current lC mA Min. VTT3323LA VTT3324LA VTT3325LA 2.0 4.0 6.0 Max. H fc (mW/cm2) VCE = 5.0 V 20 (1) 20 (1) 20 (1) Dark Current lCEO H=0 (nA) Max. 100 100 100 VCE (Volts) 10 10 10 Collector Breakdown VBR(CEO) lC = 100 A H=0 Volts, Min. 30 30 30 Emitter Breakdown VBR(ECO) lE = 100 A H=0 Volts, Min. 5.0 5.0 5.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.25 0.25 0.25 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 sec, Typ. 3.0 4.0 5.0 Angular Response 1/2
Part Number
Typ. 10 10 10
95

IRT Long T-1 (3 mm) Plastic Package
VTT3423LA, 4LA, 5LA
CASE 50A LONG T-1 (3 mm) CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor in a 3 mm diameter, lensed plastic package. The package material transmits infrared and blocks visible light. These devices are spectrally and mechanically matched to the VTE33xxLA series of IREDs.


Light Current lC mA Min. VTT3423LA VTT3424LA VTT3425LA 1.0 2.0 3.0 Max. H fc (mW/cm2) VCE = 5.0 V 20 (1) 20 (1) 20 (1) Dark Current lCEO H=0 (nA) Max. 100 100 100 VCE (Volts) 10 10 10 Collector Breakdown VBR(CEO) lC = 100 A H=0 Volts, Min. 30 30 30 Emitter Breakdown VBR(ECO) lE = 100 A H=0 Volts, Min. 5.0 5.0 5.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.25 0.25 0.25 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 sec, Typ. 3.0 4.0 5.0 Angular Response 1/2
Part Number
Typ. 10 10 10
96

Molded Lensed Lateral Package
VTT7122, 7123, 7125
CASE 7 LATERAL CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor mounted in a lensed, side looking, transparent plastic, transfer molded package. These devices are spectrally and mechanically matched to the VTE717x series of IREDs.


Light Current lC mA Min. VTT7122 VTT7123 VTT7125 1.0 2.0 4.5 Max. H fc (mW/cm2) VCE = 5.0 V 100 (5) 100 (5) 100 (5) Dark Current lCEO H=0 (nA) Max. 100 100 100 VCE (Volts) 10 10 10 Collector Breakdown VBR(CEO) lC = 100 A H=0 Volts, Min. 30 30 30 Emitter Breakdown VBR(ECO) lE = 100 A H=0 Volts, Min. 5.0 5.0 5.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.25 0.25 0.25 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 sec, Typ. 2.0 2.0 2.0 Typ. 36 36 36 Angular Response 1/2
Part Number
97

IRT Molded Lensed Lateral Package
VTT7222, 7223, 7225
CASE 7 LATERAL CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor mounted in a 3 mm diameter, lensed, end looking, plastic package. The package material transmits infrared and blocks visible light. These devices are spectrally and mechanically matched to the VTE717x series of IREDs.

ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also typical curves, pages 91-92).

Part Number
98

VTT1212, 1214
CASE 26 T-1 (5 mm) CHIP TYPE: 40T
PRODUCT DESCRIPTION
A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted in a lensed, end looking, transparent plastic package. These devices are spectrally and mechanically matched to the VTE12xx series of IREDs.

ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also typical curves, pages (91-92)

Light Current lC mA Min. VTT1212 VTT1214 2.0 4.0 Max. H fc (mW/cm2) VCE = 5.0 V 20 (1) 20 (1) Dark Current lCEO H=0 (nA) Max. 100 100 VCE (Volts) 10 10 Collector Breakdown VBR(CEO) lC = 100 A H=0 Volts, Min. 30 30 Emitter Breakdown VBR(ECO) lE = 100 A H=0 Volts, Min. 5.0 5.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.25 0.25 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 sec, Typ. 4.0 6.0 Angular Response 1/2
Part Number
Typ. 10 10
99

Clear Epoxy TO-106 Ceramic Package
VTT9002, 9003
CASE 8 TO-106 (FLAT) CHIP TYPE: 40T
PRODUCT DESCRIPTION
A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package. The chip is protected with a layer of clear epoxy. The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to any of PerkinElmer IREDs.


Light Current lC mA Min. VTT9002 VTT9003 2.0 5.0 Max. H fc (mW/cm2) VCE = 5.0 V 100 (5) 100 (5) Dark Current lCEO H=0 (nA) Max. 100 100 VCE (Volts) 10 10 Collector Breakdown VBR(CEO) lC = 100 A H=0 Volts, Min. 30 30 Emitter Breakdown VBR(ECO) lE = 100 A H=0 Volts, Min. 6.0 6.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.55 0.55 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 sec, Typ. 4.0 6.0 Typ. 50 50 Angular Response 1/2
Part Number
100

Epoxy Lensed TO-106 Ceramic Package
VTT9102, 9103
CASE 9 TO-106 (LENSED) CHIP TYPE: 40T
PRODUCT DESCRIPTION
A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package. The chip is protected with a lens of clear epoxy. The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to any of PerkinElmer IREDs.


Light Current lC mA Min. VTT9102 VTT9103 6.0 13.0 Max. H fc (mW/cm2) VCE = 5.0 V 100 (5) 100 (5) Dark Current lCEO H=0 (nA) Max. 100 100 VCE (Volts) 5 5 Collector Breakdown VBR(CEO) lC = 100 A H=0 Volts, Min. 30 30 Emitter Breakdown VBR(ECO) lE = 100 A H=0 Volts, Min. 4.0 4.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.55 0.55 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 sec, Typ. 6.0 10.0 Typ. 42 42 Angular Response 1/2
Part Number
101

TO-46 Flat Window Package
VTT1015, 16, 17
CASE 1
TO-46 (FLAT WINDOW) CHIP TYPE: 50T
PRODUCT DESCRIPTION
A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to the VTE10xx series of IREDs.


Part Number
102

TO-46 Lensed Package
VTT1115, 16, 17
CASE 3
TO-46 HERMETIC (LENSED) CHIP TYPE: 50T
PRODUCT DESCRIPTION
A large area high sensitivity NPN silicon phototransistor in a lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to the VTE11xx series of IREDs.


Part Number
103
What is an LED? What is an IRED?

LEDs are solid state p-n junction devices which emit light when forward biased. An LED is a Light Emitting Diode, a generic term. An IRED is an Infrared Emitting Diode, a term specifically applied to PerkinElmer IR emitters. Unlike incandescent lamps which emit light over a very broad range of wavelengths, LEDs emit light over such a narrow bandwidth that they appear to be emitting a single color. Their small size, long operating lifetimes, low power consumption, compatibility with solid state drive circuitry, and relatively low cost, make LEDs the preferred light source in many applications. LEDs are made from a wide range of semiconductor materials. The emitted peak wavelength depends on the semiconductor material chosen and how it is processed. LEDs can be made which emit in the visible or near infrared part of the spectrum.
LED TYPE SiC GaP GaAsP/GaP GaAsP/GaP GaAsP/GaAs AlGaAs GaP/GaP GaAlAs GaAlAs GaAs GaAlAsInP ALLOYS COLOR BLUE GREEN YELLOW ORANGE RED RED RED INFRARED INFRARED INFRARED INFRARED P 500 nm 569 nm 585 nm 635 nm 655 nm 660 nm 697 nm 820 nm 880 nm 940 nm 1300-1500 nm
enough energy to overcome the potential barrier existing at the junction. After crossing the junction these carriers will recombine. A percentage of the carriers will recombine by a radiative process in which the hole-electron recombination energy is released as a photon of light. The remaining carriers recombine by a non radiative process and give up their energy in the form of heat. The amount of light generated, or power output of the LED, varies almost linearly with forward current. Doubling the forward current approximately doubles the power output. Physically, most LED chips resemble a cube with a metallized bottom surface and a top metal contact. Some visible LED dice are planar processed with buried junction. The majority of high efficiency IRED chips have P-N junctions which extend out to the four sides of the chip. Since injected carrier recombination takes place within a few diffusion lengths of the junction, the light produced by the IRED is generated in this region. Once generated, the light travels out in all directions. Thus, light is not only emitted from the top surface of the chip but also from the sides. As the light travels through the chip some is reabsorbed. Light that strikes the LED chip surface at an angle greater than the critical angle of the dielectric interface is internally reflected. Only that light that exits the LED chip is useful. The packaging used to house the LED chip serves three functions; to protect the chip and its lead wire(s) from hostile environments, to increase the percentage of photons that can escape from the chip to the outside world, and to focus the light through the use of incorporated lenses and reflectors.
The P-N junction is formed by doping one region of the material with donor atoms and the adjacent region with acceptor atoms. Like all P-N junction devices, LEDs exhibit the familiar diode current-voltage characteristics. LEDs emit light only when they are biased in the forward direction. Under forward biased conditions carriers are given
N on P 880 nm GaAlAs IR emitting diode (IRED)
104
Characteristics of IREDs
Measurement of Power Output
It is standard industry practice to characterize the output of IREDs in terms of power output. Since the amount of light an IRED generates depends on the value of the forward drive current (IF), the power output is always stated for a given value of current. Also, the ambient temperature must be specified inasmuch as the radiant power decreases with increasing temperature, power decreases with increasing temperature, typically -0.9%/C. The following two methods are used to measure light power output. front of the IRED. In order to achieve repeatable and meaningful measurement of this parameter it is necessary that the distance from the IRED to the detector and the active area of the detector be specified. This is because the radiation pattern observed for many IREDs is dependent on the distance from the IRED. For many of its emitters PerkinElmer Optoelectronics states a minimum irradiance (Ee), which is the average power density in milliwatts per square centimeter (mw/cm2) incident onto a surface of diameter (D) at a distance (d). The irradiance will in general not be uniform over this whole surface, and may be more or less intense on the optical axis. Irradiance at other distances may be determined from the graphs showing irradiance versus distance. The on-axis power can also be stated as a radiant intensity (Ie) which is the average power per unit of solid angle expressed in units of milliwatts per steradian (mW/sr). To calculate the irradiance at any distance the following formula is applicable. Ee = Ie/d2 (mW/cm2) where: The total power method ignores the effect of the beam pattern produced by the IRED package. It cannot predict how much light will strike an object positioned some distance in front of the IRED. This information is vital for design calculations in many applications. However, total output power measurement is repeatable and quite useful when trying to compare the relative performance of devices in the same type of package. Ie = radiant intensity (mW/sr) d = distance (cm) However, it should be noted that the IRED cannot be treated as a point source when the spacing between the IRED and receiver is small, less than ten times the IRED package diameter. Attempts to use the inverse square law can lead to serious errors when the detector is close to the IRED. Actual measurements should be used in this situation. For IREDs of any particular package type there is a direct relationship between all three methods used for specifying power output. However, imperfect physical packages and optical aberrations prevent perfect correlation.
Total Power (PO)

This method involves collecting and measuring the total amount of light emitted from the IRED regardless of the direction. This measurement is usually done by using an integrating sphere or by placing a very large area detector directly in front of the IRED so that all light emitted in the forward direction is collected. The total output power is measured in units of watts.
Detector is so large in area and is so close to the IRED that all light emitted by the IRED is collected.
Measuring Total Power - All Light is Collected
On Axis Power (PA)

This method characterizes the IRED in terms of axial intensity. Many practical applications require knowledge of what percentage of IR power emitted is incident upon a detector located at some distance in
Detector or area (A) is located at specified distance (d) in front of the IRED being measured.
Measuring On-Axis Power
105
Efficiency vs. Drive Current
As mentioned in the section What is an LED? What is an IRED?, once injected carriers cross the junction they can recombine by a radiative process which produces light or by a nonradiative process which produces heat. The ratio between these two processes is dependent on the current density (Amps/cm2 of junction area). At low current densities (.1A/cm2) the nonradiative processes dominate and very little light is generated. As the current density is increased the radiative mechanisms increase in efficiency so that a larger and larger percentage of the forward current will contribute to the generation of light. At sufficient current densities, the percentage of forward current which produces light is almost a constant. For an IRED of average junction area (0.015" x 0.015") this region of linear operation is in the range of approximately 2 mA to 100 mA. Also, at high forward drive currents the junction temperature of the chip increases due to significant power dissipation. This rise in temperature results in a decrease in the radiative recombination efficiency. As the current density is further increased, internal series resistance effects will also tend to reduce the light generating efficiency of the IRED.
Peak Spectral Wavelength (P)

IREDs are commonly considered to emit monochromatic light, or light of one color. In fact, they emit light over a narrow band of wavelengths, typically less than 100 nm. The wavelength at which the greatest amount of light is generated is called the peak wavelength, P. It is determined by the energy bandgap of the semiconductor material used and the type of dopants incorporated into the IRED. The peak wavelength is a function of temperature. As the temperature increases, P shifts towards longer wavelengths (typically 0.2 nm/C).
Forward Voltage (VF)

The current-voltage characteristics of IREDs, like any other PN junction device, obeys the standard diode equation.
IF = I O [ e
qV F nKT
1]
Light Output Degradation

In normal operation, the amount of light produced by an IRED will gradually decrease with time. The rate of decrease depends on the temperature and the current density. IREDs driven at low forward currents at room temperature ambient will degrade more slowly than IREDs driven at higher forward drive currents and at elevated temperatures. Typical degradation data is presented in the data sheet section. Light output degradation is caused by stress placed on the IRED chip, be it mechanical, thermal or electrical. Stress causes defects in the chip to propagate along the planes of the chips crystalline structure. These defects in the crystalline structure, called dark line defects, increase the percentage of non radiative recombinations. Forward biasing the IRED provides energy which aids in the formation and propagation of these defects. The designer using IREDs must address the light output degradation with time characteristic by including adequate degradation margins in his design so that it will continue to function adequately to the end of the design life.
VF is the voltage drop across the IRED when it is forward biased at a specific current, IF. It is important to note that VF is a function of temperature, decreasing as temperature increases. Plots of VF vs. IF as a function of temperature are included in the data sheet section.
Reverse Breakdown Voltage (VBR)

This is the maximum reverse voltage that can safely be applied across the IRED before breakdown occurs at the junction. The IRED should never be exposed to VBR even for a short period of time since permanent damage can occur. PerkinElmer IREDs are tested to a reverse voltage specification of 5V minimum.
106
Power Dissipation
Current flow through an IRED is accompanied by a voltage drop across the device. The power dissipated (power = current x voltage) causes a rise in the junction temperature rise is a decrease in the light output of the IRED (approximately -0.9%/C). If the junction temperature becomes too high, permanent damage to the IRED will result. The maximum power dissipation rating of a semiconductor device defines that operating region where overheating can damage the device. In any practical application, the maximum power dissipation depends on: ambient temperature, maximum (safe) junction temperature, the type of IRED package, how the IRED package is mounted, and the exact electrical drive current parameters. While the IRED chip generates heat, its packaging serves to remove this heat out into the environment. The packages ability to dissipate heat depends not only on its design and construction but also varies from a maximum, if an efficient infinite heat sink is used, to a minimum, for the case where no heat sink is present. The thermal impedance rating of the package quantifies the packages ability to get rid of the heat generated by the IRED chip under normal operation. Thermal impedance is defined as: JA = (TJ TA) / PD where: JA = thermal impedance, junction to ambient TJ = junction temperature TA = ambient temperature PD = power dissipation of the device By definition JA assumes that the device is not connected to an external heat sink and as such represents a worse case condition in as far as power dissipation is concerned. For plastic packages and non-heat-sunk hermetics: JA 400C/W Example: A hermetic LED is driven with a forward current of 20 mA dc. At this drive current the forward voltage drop across the IRED is 1.5 volts. (C/W) PD = (.020 A) x (1.5 V) = .030 W T = (400C/W) x (.030 W) = 12C (0.9%/C) x 12C) -11% There is an 11% decrease in the amount of light generated by the IRED. For hermetics with good heat sinking: JC 150C/W where: JC = thermal impedance, junction to case T = (150C/W) x (.030 W) = 4.5C (0.9%/C) x (4.5C) -4% There is only a 4% decrease in the amount of light generated by the IRED when a heat sink is used. This is a clear example of the law of diminishing returns: increasing the forward drive current will increase the amount of light generated by the IRED. However, increasing the drive current also increases the power dissipation in the device. This raises the IREDs junction temperature resulting in a decrease in the IREDs efficiency. One way to overcome this performance limiting characteristic is to pulse the IRED on and off rather than driving it with a dc current. Maximum light output is obtained because the average power dissipated is kept small. Above 100 mA of drive current it is advisable to limit the maximum pulse width to a few hundred microsecounds, and a 10% duty cycle.
107
GaAlAs 880 nm IREDs - General Characteristics

FEATURES
Nine standard packages in hermetic and low cost epoxy End and side radiating packages Graded output High efficiency GaAlAs 880 nm LPE process delivers twice the power of conventional GaAs 940 nm emitters
PRODUCT DESCRIPTION
This series of infrared emitting diodes (IREDs) consists of three standard chips in nine different packages, providing a broad range of mounting, lens, and power output options. Both end and side radiating cases, as well as narrow and wide angle emitters, are part of this series. All devices use high efficiency GaAlAs liquid phase epitaxial chips mounted P side down for highest output. TO-46 and some T-1 (5 mm) devices are double bonded for increased reliability in pulse applications. These IREDs are ideally suited for use with PerkinElmers silicon photodiodes or phototransistors.
Typical Characteristic Curves Power Output vs. Time (@25C) Small IRED Chip
Coax, T-1 & Lateral Packages
Power Output vs. Time (@25C) Large IRED Chip

TO-46 & T-1 Packages
Power Output vs. Forward Current
108

Typical Characteristic Curves (cont.) Angular Emission
T-1 Lateral Packages
On Axis Relative Irradiance

T-1 & Lateral Packages
Angular Emission
T-1 Packages

Angular Emission
TO-46 & Coax Packages

Coax Packages
109

Typical Characteristic Curves (cont.) Forward Voltage vs. Forward Current
Forward Voltage vs. Forward Current

T-1, Lateral & Coax Packages
NOTES:
1. While the output of any series of IREDs is selected by the parameters shown as a minimum, devices may be selected by any of the three parameters shown on special order. For any series, there is a direct relationship between all three methods of specifying output; however, variations in lens and chip placements from unit to unit prevent perfect correlation between parameters. Thus, a unit which has high total power output may have a much lower than expected on axis radiant intensity and therefore produce a lower irradiance. Total Power (PO) is measured at the forward test current. All energy emitted in the forward direction is included. Irradiance (Ee) is the average irradiance in milliwatts per square centimeter on a surface of diameter (D) at a distance (d). The irradiance will in general not be uniform over this whole surface, and may be more or less intense on the optical axis. When this is the characterizing parameter, irradiance at other distances may be determined from the graphs showing irradiance vs. separation. 2. Radiant Intensity (Ie) has the dimensions of milliwatts per steradian. To calculate the irradiance at any distance, the following formula is applicable: Ee = Ie / d2 mW/cm2 For example, a device with a radiant intensity of 150 mW/sr would produce an irradiance of 0.6 W/cm2 at a 5 meter distance. Ie is measured on axis at 36.3 mm from flange of the device. The detector is 6.35 mm dia. For near field irradiance where the inverse square law does not apply, see the graphs showing relative irradiance vs. separation. IFT is the steady state forward current unless otherwise specified. When pulse conditions are specified, the forward drop is the peak value. 1/2 is the angle between the optical axis and the half intensity point of the IREDs output beam pattern. Pulse test current is 1.0 A peak. Pulse width is 100 sec, pulse repetition rate is 10 pps.
3. 4.
110
GaAlAs Infrared Emitting Diodes

TO-46 Flat Window Package 880 nm
VTE1063
DESCRIPTION
CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018"
This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted)

Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30C: Maximum Continuous Current: Derate above 30C: Peak Forward Current, 10 s, 100 pps: Temp. Coefficient of Power Output (Typ.): -55C to 125C 200 mW 2.11 mW/C 100 mA 1.05 mA/C 3A -.8%/C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise: 1.0 s Fall: 1.0 s Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) 5.0V 10 A 880 nm 35 pF
260C
ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also GaAlAs curves, pages 108-110)

Output Irradiance Part Number Ee mW/cm2 Min. VTE1063 3.8 Typ. 5.0 Condition distance mm 36 Diameter mm 6.4 Radiant Intensity Ie mW/sr Min. 49 Total Power PO mW Typ. 80 Test Current IFT mA (Pulsed) 1.0 Forward Drop VF @ IFT Volts Typ. Typ. 2.8 Max. 3.5 35 Half Power Beam Angle 1/2

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
111

TO-46 Lensed Package 880 nm
VTE1163
DESCRIPTION
CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018"
This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.

Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30C: Maximum Continuous Current: Derate above 30C: Peak Forward Current, 10 s, 100 pps: Temp. Coefficient of Power Output (Typ.): -55C to 125C 200 mW 2.11 mW/C 100 mA 1.05 mA/C 3A -.8%/C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise: 1.0 s Fall: 1.0 s Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) 5.0V 10 A 880 nm 35 pF
260C

Output Irradiance Part Number Ee mW/cm2 Min. VTE1163 22 Typ. 28 Condition distance mm 36 Diameter mm 6.4 Radiant Intensity Ie mW/sr Min. 285 Total Power PO mW Typ. 110 Test Current IFT mA (Pulsed) 1.0 Forward Drop VF @ IFT Volts Typ. Typ. 2.8 Max. 3.5 10 Half Power Beam Angle 1/2

112

T-1 (5 mm) Plastic Package 880 nm
VTE1261, 1262
DESCRIPTION
CASE 26 T-1 (5 mm) CHIP SIZE: .018" x .018"
This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.

Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30C: Maximum Continuous Current: Derate above 30C: Peak Forward Current, 10 s, 100 pps: Temp. Coefficient of Power Output (Typ.): -40C to 100C 200 mW 2.86 mW/C 100 mA 1.43 mA/C 3.0 A -.8%/C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise: 1.0 s Fall: 1.0 s Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) 5.0V 10 A 880 nm 35 pF
260C

Output Irradiance Part Number Ee mW/cm2 Min. VTE1261 VTE1262 3.0 4.0 Typ. 3.9 5.2 Condition distance mm 36 36 Diameter mm 6.4 6.4 Radiant Intensity Ie mW/sr Min. 39 52 Total Power PO mW Typ. 20 25 Test Current IFT mA (Pulsed) 100 100 Forward Drop VF @ IFT Volts Typ. Typ. 1.5 1.5 Max. 2.0 2.0 10 10 Half Power Beam Angle 1/2

113

VTE1281-1, -2
DESCRIPTION
This narrow beam angle 5 mm diameter plastic packaged emitter contains a medium area, single wirebonded, GaAlAs, 880 nm, high efficiency IRED chip. It is designed to be cost effective in moderate pulse drive applications.

260C

Output Irradiance Part Number Ee mW/cm2 Min. VTE1281-1 VTE1281-2 2.5 5.0 Typ. 3.3 6.5 Condition distance mm 36 36 Diameter mm 6.4 6.4 Radiant Intensity Ie mW/sr Min. 32 65 Total Power PO mW Typ. 20 25 Test Current IFT mA (Pulsed) 100 100 Forward Drop VF @ IFT Volts Typ. Typ. 1.5 1.5 Max. 2.0 2.0 10 10 Half Power Beam Angle 1/2

114

Flat T-1 (5 mm) Plastic Package 880 nm
VTE1281F
DESCRIPTION
CASE 26F T-1 (5 mm) FLAT CHIP SIZE: .015" x .015"
This 5 mm diameter plastic packaged emitter has no lens. It is designed to be coupled to plastic fibers or used to illuminate an external lens. It contains a medium area, single wirebonded, GaAlAs 880 nm chip and is designed to be cost effective in moderate pulse drive applications.

260C

Output Irradiance Part Number Ee mW/cm2 Min. VTE1281F 0.16 Typ. 0.21 Condition distance mm 36 Diameter mm 6.4 Radiant Intensity Ie mW/sr Min. 2.1 Total Power PO mW Typ. 20 Test Current IFT mA (Pulsed) 100 Forward Drop VF @ IFT Volts Typ. Typ. 1.5 Max. 2.0 45 Half Power Beam Angle 1/2

115

VTE1281W-1, W-2
DESCRIPTION
CASE 26W T-1 (5 mm) WIDE ANGLE CHIP SIZE: .015" x .015"
This wide beam angle 5 mm diameter plastic packaged emitter contains a GaAlAs, 880 nm IRED chip. It is a cost effective design and is well suited for high current pulse applications.

260C

Output Irradiance Part Number Ee mW/cm2 Min. VTE1281W-1 VTE1281W-2 1.2 2.5 Typ. 1.6 3.3 Condition distance mm 36 36 Diameter mm 6.4 6.4 Radiant Intensity Ie mW/sr Min. 16 32 Total Power PO mW Typ. 20 25 Test Current IFT mA (Pulsed) 100 100 Forward Drop VF @ IFT Volts Typ. Typ. 1.5 1.5 Max. 2.0 2.0 25 25 Half Power Beam Angle 1/2

116

T-1 (5 mm) Bullet Package 880 nm
VTE1285
DESCRIPTION
CASE 62 T-1 (5 mm) BULLET CHIP SIZE: .015" x .015"
This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip. The custom lens allows this cost effective device to have a very narrow half power beam emission of 8.

260C

Output Irradiance Part Number Ee mW/cm2 Min. VTE1285 3.0 Typ. 5.5 Condition distance mm 36 Diameter mm 6.4 Radiant Intensity Ie mW/sr Min. 39 Total Power PO mW Typ. 20 Test Current IFT mA (Pulsed) 100 Forward Drop VF @ IFT Volts Typ. Typ. 1.5 Max. 2.0 8 Half Power Beam Angle 1/2

117

VTE1291-1, 1291-2
DESCRIPTION
This narrow beam angle 5 mm plastic packaged emitter contains a double wirebonded, GaAlAs, 880 nm IRED chip. This cost effective design is well suited for dc or high current pulse applications. This device is a UL recognized component for smoke alarm applications (UL file #S3506).

260C

Output Irradiance Part Number Ee mW/cm2 Min. VTE1291-1 VTE1291-2 2.5 5.0 Typ. 3.3 6.5 Condition distance mm 36 36 Diameter mm 6.4 6.4 Radiant Intensity Ie mW/sr Min. 32 65 Total Power PO mW Typ. 20 25 Test Current IFT mA (Pulsed) 100 100 Forward Drop VF @ IFT Volts Typ. Typ. 1.5 1.5 Max. 2.0 2.0 12 12 Half Power Beam Angle 1/2

118

VTE1291W-1, W-2
DESCRIPTION
CASE 26W T-1 (5 mm) WIDE ANGLE CHIP SIZE: .015" x .015"
This wide beam angle 5 mm plastic packaged emitter contains a double wirebonded, GaAlAs, 880 nm IRED chip. This cost effective design is well suited for dc or high current pulse applications. This device is a UL recognized component for smoke alarm applications (UL file #S3506).

260C

Output Irradiance Part Number Ee mW/cm2 Min. VTE1291W-1 VTE1291W-2 1.2 2.5 Typ. 1.6 3.3 Condition distance mm 36 36 Diameter mm 6.4 6.4 Radiant Intensity Ie mW/sr Min. 16 32 Total Power PO mW Typ. 20 25 Test Current IFT mA (Pulsed) 100 100 Forward Drop VF @ IFT Volts Typ. Typ. 1.5 1.5 Max. 2.0 2.0 25 25 Half Power Beam Angle 1/2

119

T-1 (5 mm) Bullet Package 880 nm
VTE1295
DESCRIPTION
CASE 62 T-1 (5 mm) BULLET CHIP SIZE: .015" x .015"
This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip. The custom lens allows this cost effective device to have a very narrow half power beam emission of 8. This device is a UL recognized component for smoke alarm applications (UL file #S3506).

260C

Output Irradiance Part Number Ee mW/cm2 Min. VTE1295 3.0 Typ. 5.5 Condition distance mm 36 Diameter mm 6.4 Radiant Intensity Ie mW/sr Min. 39 Total Power PO mW Typ. 20 Test Current IFT mA (Pulsed) 100 Forward Drop VF @ IFT Volts Typ. Typ. 1.5 Max. 2.0 8 Half Power Beam Angle 1/2

120

Long T-1 (3 mm) Plastic Package 880 nm
VTE3372LA, 74LA
DESCRIPTION
CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011"
This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small area, GaAlAs, 880 nm, high efficiency IRED die.

Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30C: Maximum Continuous Current: Derate above 30C: Peak Forward Current, 10 s, 100 pps: Temp. Coefficient of Power Output (Typ.): -40C to 100C 100 mW 1.43 mW/C 50 mA 0.71 mA/C 2.5 A -.8%/C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise:1.0 s Fall: 1.0 s Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) 5.0V 10 A 880 nm 14 pF
260C

Output Irradiance Part Number Ee mW/cm2 Min. VTE3372LA VTE3374LA 2.0 4.0 Typ. 2.6 5.2 Condition distance mm 10.16 10.16 Diameter mm 2.1 2.1 Radiant Intensity Ie mW/sr Min. 2.0 4.1 Total Power PO mW Typ. 3.0 5.0 Test Current IFT mA (Pulsed) 20 20 Forward Drop VF @ IFT Volts Typ. Typ. 1.3 1.3 Max. 1.8 1.8 10 10 Half Power Beam Angle 1/2

121

Molded Lateral Package 880 nm
VTE7172, 7173
DESCRIPTION
CASE 7 LATERAL CHIP SIZE: .011" x .011"
These side-looking packages are designed for use in PC board mounted interrupt detectors. The package is transfer molded plastic and contains a high efficiency, 880 nm, GaAlAs IRED die.

260C

Output Irradiance Part Number Ee mW/cm2 Min. VTE7172 VTE7173 0.4 0.6 Typ. 0.6 0.8 Condition distance mm 16.7 16.7 Diameter mm 4.6 4.6 Radiant Intensity Ie mW/sr Min. 1.1 1.7 Total Power PO mW Typ. 2.5 5.0 Test Current IFT mA (Pulsed) 20 20 Forward Drop VF @ IFT Volts Typ. Typ. 1.3 1.3 Max. 1.8 1.8 25 25 Half Power Beam Angle 1/2

122
GaAs 940 nm Infrared Light Emitting Diodes

Features
Three standard packages in hermetic and low cost epoxy End radiating packages High power GaAs, 940 nm LPE process
Product Description
This series of infrared emitting diodes (IREDs) consists of two standard chips in three different packages. All devices use high efficiency GaAs liquid phase epitaxial chips mounted P side down for highest output. TO-46 devices are double bonded for increased reliability in pulse applications. These IREDs are ideally suited for use with PerkinElmers silicon photodiodes or phototransistors.
Typical Characteristic Curves Power Output vs. Time (@25C) Small IRED Chip
Long T-1 Package
Power Output vs. Time (@25C) Large IRED Chip

TO-46 Packages

TO-46 Packages
Power Output vs. Forward Current
123

Typical Characteristic Curves (cont.) Angular Response
TO-46 Package
Angular Response
Long T-1 Package

TO-46 Packages

Long T-1 Package
Notes:
1. While the output of any series of IREDs is selected by the parameters shown as minimum, devices may be selected by any of the three parameters shown on special order. For any series, there is a direct relationship between all three methods of specifying output; however, variations in lens and chip placements from unit to unit prevent perfect correlation between parameters. Thus, a unit which has high total power output may have a much lower than expected on axis radiant intensity and therefore produce a lower irradiance. Total Power (PO) is measured at the forward test current. All energy emitted in the forward direction is included. Irradiance (Ee) is the average irradiance in milliwatts per square centimeter on a surface of diameter (D) at a distance (d). The irradiance will in general not be uniform over this whole surface, and may be more or less on the optical axis. When this is the characterizing parameter, irradiance at other distances may be determined from the graphs showing irradiance vs. separation.
124

Radiant Intensity (Ie) has the dimensions of milliwatts per steradian. To calculate the irradiance at any distance, the following formula is applicable: Ee = Ie/d2 mW/cm2 For example, a device with a radiant intensity of 150 mW/sr would produce an irradiance of 0.6 W/cm2 at a 5 meter distance. Ie is measured on axis at 36.3 mm from flange of the device. The detector is 6.35 mm diameter. For near field irradiance where the inverse square law does not apply, see the graphs showing relative irradiance vs. separation. 2. 3. 4. IFT is the steady state forward current unless otherwise specified. When pulse conditions are specified, the forward drop is the peak value. 1/2 is angle between the optical axis and the half intensity sec, pulse repetition output beam pattern. Pulse test current is 1.0 A peak. Pulse width is 100 sec, pulse repetition rate is 10 pps.
125
GaAs Infrared Emitting Diodes

TO-46 Flat Window Package 940 nm
VTE1013
DESCRIPTION
CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018"
This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.

Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30C: Maximum Continuous Current: Derate above 30C: Peak Forward Current, 10 s, 100 pps: Temp. Coefficient of Power Output (Typ.): -55C to 125C 200 mW 2.11 mW/C 100 mA 1.05 mA/C 3.0 A -.8%/C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise:1.0 s Fall: 1.0 s Lead Soldering Temperature: (1.6 mm from case, 5 seconds max. 5.0V 10 A 940 nm 35 pF
260C

Output Irradiance Part Number Ee mW/cm2 Min. VTE1013 2.1 Typ. 2.7 Condition distance mm 36 Diameter mm 6.4 Radiant Intensity Ie mW/sr Min. 27 Total Power PO mW Typ. 30 Test Current IFT mA (Pulsed) 1.0 Forward Drop VF @ IFT Volts Typ. Typ. 1.9 Max. 2.5 35 Half Power Beam Angle 1/2

126

TO-46 Lensed Package 940 nm
VTE1113
DESCRIPTION
CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" X .018"
This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.

Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30C: Maximum Continuous Current: Derate above 30C: Peak Forward Current, 10 s, 100 pps: Temp. Coefficient of Power Output (Typ.): -55C to 125C 200 mW 2.11 mW/C 100 mA 1.05 mA/C 3.0 A -.8%/C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise:1.0 s Fall: 1.0 s Lead Soldering Temperature: (1.6 mm from case, 5 seconds max. 5.0V 10 A 940 nm 35 pF
260C

Output Irradiance Part Number Ee mW/cm2 Min. VTE1113 12 Typ. 15 Condition distance mm 36 Diameter mm 6.4 Radiant Intensity Ie mW/sr Min. 156 Total Power PO mW Typ. 30 Test Current IFT mA (Pulsed) 1.0 Forward Drop VF @ IFT Volts Typ. Typ. 1.9 Max. 2.5 10 Half Power Beam Angle 1/2

127

Long T-1 Plastic Package 940 nm
VTE3322LA, 24LA
DESCRIPTION
CASE 50A LONG T-1 CHIP SIZE: .011" X .011"
This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.

Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30C: Maximum Continuous Current: Derate above 30C: Peak Forward Current, 10 s, 100 pps: Temp. Coefficient of Power Output (Typ.): Maximum Reverse Voltage: -40C to 100C 100 mW 1.43 mW/C 50 mA 0.71 mA/C 3A -.8%/C 5.0V Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise:1.0 s Fall: 1.0 s Lead Soldering Temperature: 10 A 940 nm 14 pF
260C
(1.6 mm from case, 5 seconds max.

Output Irradiance Part Number Ee mW/cm2 Min. VTE3322LA VTE3324LA 1.0 2.0 Typ. 1.3 2.6 Condition distance mm 10.16 10.16 Diameter mm 2.1 2.1 Radiant Intensity Ie mW/sr Min. 1.0 2.0 Total Power PO mW Typ. 1.5 2.5 Test Current IFT mA (Pulsed) 20 20 Forward Drop VF @ IFT Volts Typ. Typ. 1.25 1.25 Max. 1.6 1.6 10 10 Half Power Beam Angle 1/2

128
Application Notes
APPLICATION NOTE #1 Light - Some Physical Basics
Light is produced by the release of energy from the atoms of a material when they are excited by heat, chemical reaction or other means. Light travels through space in the form of an electromagnetic wave. A consequence of this wave-like nature is that each "color" can be completely defined by specifying its unique wavelength. The wavelength is defined as the distance a wave travels in one cycle. Since the wavelengths of light are very short they are normally measured in nanometers, one nanometer being equal to 1x10-9 meters. The spectral response of PerkinElmer Optoelectonics photodetectors are specified by plots of relative response versus wavelength (color).
400 ULTRAVIOLET
(TO X-RAYS AND GAMMA RAYS)
700 VISIBLE LIGHT INFRARED

(TO RADAR WAVES)
VIOLET VIOLET BLUE GREEN YELLOW ORANGE RED
RED BELOW 450 nm 450 - 500 nm 500 - 570 nm 570 - 590 nm 590 - 610 nm 610 - 700 nm
WAVELENGTH
NATURAL ILLUMINANCE
Sky Condition Direct Sunlight Overcast Day Twilight Full Moon Clear Night Sky (moonless) Light Level (Typical) 10000 fc 1000 fc 1 fc .1 fc .001 fc
ROOM ILLUMINATION
Lighting Condition Candle - Lit Room Auditorium Classroom Inspecion Station Hospital Operating Room Light Level (Typical) 5 fc 10 fc 30 fc 250 fc 500 -1000 fc
129
Application Notes
APPLICATION NOTE #2 Spectral Output of Common Light Sources
Incandescent lamps can be considered as black body radiators whose spectral output is dependent on their color temperature. The sun has approximately the same spectral radiation distribution as that of a black body @ 5900 K. However, as viewed from the surface of the earth, the suns spectrum contains H2O and CO2 absorption bands. Due to their long operating lifetimes, small size, low power consumption, and the fact that they generate little heat, LEDs are the light sources of choice in many applications. When biased in the forward direction LEDs emit light that is very narrow in spectral bandwidth (light of one color). The color of the light emitted depends on which semiconductor material was used for the LED.
Black Body Sources Output vs Wavelength
LED Light Sources

p 569nm 585nm 635nm 655nm 660nm 697nm 880nm 940nm
Fluorescent lamps exhibit a broad band spectral output with narrow peaks in certain parts of the spectrum. Shown below is a plot of the light output of a typical daylight type fluorescent tube.
LED TYPE GaP GaAsP/GaP GaAsP/GaP GaAsP/GaAs AIGaAs GaP/GaP GaAIAs GaAs
COLOR GREEN YELLOW ORANGE RED RED RED INFRARED INFRARED
Fluorescent Lamp Output vs Wavelength
130
Application Notes
APPLICATION NOTE #3 Photodiode Response Time
The response time of a photodiode is defined as the time it takes for light generated carriers within the body of the diode to arrive at and cross the P-N junction. When the diode is illuminated, photons of light penetrate into the silicon and are absorbed generating electron-hole pairs. The average depth of penetration of a photon is wavelength dependent. The penetration depth has a statistical distribution so that there will be some electron-hole pairs generated at all depths. For light of very short wavelengths (ie UV and blue), most of the carriers will be generated very near the top surface of the diode. At this surface, due to the termination of the crystal lattice, the minority carrier lifetime is extremely short and most of the carriers will recombine before they can cross the P-N junction and contribute to the photocurrent. Light of longer wavelengths tends to penetrate deeper, generating a good number of carriers in the depletion region. The strong electric field that resides there sweeps the carriers across the junction at which point they contribute to the photocurrent. Light of even longer wavelengths (ie IR) penetrates even deeper generating carriers in the area below the depletion region. As these carriers slowly diffuse towards the P-N junction, a fair number will recombine and never contribute to the photocurrent. For photodiodes with long minority carrier lifetimes, a greater percentage of these carriers will survive to reach the junction. The risetime of a photodiode consists of three components: 1. TCC (charge collection time) is the time required for the electric field, residing at the P-N junction, to sweep out carriers generated within or entering the depletion region. Typically TCC is less that 1 nsec. TRC (rise time associated with the RC time constant) is the time required to charge or discharge the photodiode's junction capacitance (CJ) through the external load resistance(RL) and is given as: TRC = 2.2 RL CJ 2. 3. 4. The series resistance of the photodiode (RS) is comprised of the resistance of the undepleted region of the diode and the contact resistance. RS is usually of the order of 10 ohms but can be up to a few hundred ohms in small area diodes of high resistivity silicon. When the output current of the photodiode is fed into a transimpedance op-amp the effective load resistance is the feedback resistance (RF) divided by the open loop gain. 3. TDIF (diffusion time) is the time needed for carriers generated outside the depletion region to diffuse into the depletion region. Carriers can diffuse into the depletion layer from the undepleted lower portion of the silicon chip as well as laterally from outside the perimeter of the active area of the chip.
The total risetime of a photodiode is equal to the square root of the sum of the squares of the three risetime components.
TR =
T CC + T RC + TDIF
TR is essentially equal to the largest of the three risetime components. The fastest response time will be achieved for the condition where the RC time constant is as small as possible and where all carriers are generated within the depletion region. What follows is a practical guideline for achieving these conditions. 1. Within the limits imposed by the application, select the process that results in the lowest value for junction capacitance per unit of active area. Choose the photodiode with the smallest active area that still generates the required photocurrent. Design the external circuit such that the load resistance the diode sees is as small as possible. Apply a reverse voltage across the photodiode. This will expand the width of the depletion layer resulting in a larger percentage of carriers being generated within this region. The applied voltage will result in an increase in the electric field so that carriers within that feld will experience an increase in drift velocity. Further, the junction capacitance will decrease with the increasing applied voltage.
2.
In practice the RL term consists of the series combination of the external load resistance and internal series resistance of the photodiode (RS). The CJ term should include not only the junction capacitance of the photodiode but also all external capacitance such as the packaging capacitance and the external wiring capacitance.
Compiled below are some examples which illustrate how choice of light source, load resistance, and bias voltage effect the speed of a silicon photodiode. The numbers are produced by theoretical calculations, and numerous simplifying assumption have been made. Nevertheless these charts serve to show trends.
131
Application Notes
SLOWER DIODES LARGE LARGE SMALL INFARED LARGE PARAMETER ACTIVE AREA JUNCTION CAPACITANCE REVERSE APPLIED VOLTAGE LIGHT SOURCE LOAD RESISTANCE HIGHER NOISE SMALL SMALL LARGE VISIBLE SMALL
2 CC
+T
2 RC
+T
2 DIF
SPEED (nsec.) LIGHT SOURCE: RED LIGHT (660 nm) TCC VR = 0V (CJ = 120 pF) VR = 10V (CJ = 24 pF) 1 1 RL = 50 ohms TRC 13 2.6 TDIF 54 0* TR 55.6 2.8 TCC 1 1 RL = 1000 ohms TRC 264 53 TDIF 54 0* TR 270 53
* ALL CARRIERS ARE GENERATED WITHIN THE DEPLETION REGION SPEED (nsec.) LIGHT SOURCE: RED LIGHT (940 nm TCC VR = 0V (CJ = 120 pF) VR = 10V (CJ = 24 pF) 1 1 RL = 50 ohms TRC 13 2.6 TDIF 1448 97 TR 1448 97 TCC 1 1 RL = 1000 ohms TRC 264 53 TDIF 1448 97 TR 1472 110
132
Application Notes
APPLICATION NOTE #4 Modes of Operation - Photovoltaic vs. Photoconductive
A silicon photodiode can be operated in either the photovoltaic or photoconductive mode. When unbiased, the photodiode is being operated in the photovoltaic mode. When illuminated, the diode will generate a photocurrent which will divide between the internal shunt resistance of the junction and any external load resistance. That part of the photocurrent that flows through the external resistor will produce a voltage across that resistor which will act as a forward bias on the photodiode. tolerated in the actual application. As detailed in Application Note #3, applying a reverse bias across the photodiode increases its speed of response and must be used if nsec response times are needed. However, the dark leakage current of the photodiode tends to increase with applied reverse voltage resulting in an increase in the amount of shot noise generated by the photodiode. In general, a photodiode is operated in the photovoltaic mode when low nose is of prime concern, and under applied reverse bias when maximum speed is needed. A more detailed treatment on photodiode noise is given in Application Note #5.
APPLICATION NOTE #5 Photodiode Noise Characteristics

Certain figures of merit are defined to describe the performance of photodiodes: Spectral Responsivity (Re) Radiant Sensitivity (SR) Quantum Efficiency (QE) Rise Time (tR) Cutoff Frequency (fc) Shunt Resistance (RSH) Series Resistance (RS)
Current/Voltage Characteristics - Photovoltaic Mode
Junction Capacitance (CJ) Maximum Reverse Voltage (VR max.) Dark Current (ID) Short Circuit Current (ISC) Open Circuit Voltage (VOC) Noise Current (IN) Noise Equivalent Power (NEP) Detectivity (D) This application note will discuss the last three figures of merit: Noise Current (IN), Noise Equivalent Power (NEP) and Detectivity (D).
Current/Voltage Characteristics - Photoconductive Mode
Noise Current (IN) The equivalent circuit of a photodiode is shown below. It consists of an ideal current generator in parallel with an ideal diode. The junction capacitance, series resistance and the equivalent noise current generator associated with the junction shunt resistance account for the other photodiode parameters.
When a reverse bias is applied, the photodiode is being operated in the photoconductive mode. In this mode the photodiode functions as a current source. The choice of operating mode hinges on the trade-off between the required speed of response and the maximum noise that can be
133
Application Notes
resistance RSH and is directly proportional to absolute temperature such that:
I = J 4kTB R SH
where: IJ = Johnson noise (A) where: IP = photocurrent generator (A) CJ = junction capacitance (F) IN = noise current generator (A, rms) RSH = shunt resistance () RS = series resistance () VS = signal voltage (V) RL = load resistance () Like other types of light sensors, the lower limits of light detection for photodiodes are determined by the noise characteristics of the device. The main sources of noise in photodiodes are thermal noise (or Johnson noise), shot noise and flicker noise (1/f or contact noise). These noise sources are independent of each other and the total noise current is the root of the sum of the square of each of these noise sources. Hence:
IN = 2 2 2 IJ + IS + IF
k = Boltzmann's constant (1.38 x 10-23 joules/K) T = absolute temperature (K) B = noise bandwidth (Hz) RSH = photodiode shunt resistance () In photodiodes, Johnson noise may become the dominant type when either low leakage/high dynamic resistance photodiodes are used in the zero bias configuration or when high value resistors (megohm to gigohm) are used as current sensing elements. Because thermal noise is independent of frequency and contains constant noise power density per unit bandwidth (B), it is considered white noise and is expressed in units of amps-per-root-Hertz ( A Hz ). For example, a photodiode having RSH = .5 M at 25C:
I B = J = 4KT R SH 20 0.5 10 6
1.6 10
= 0.18 pA (rms) Hz
Shot Noise (IS)

Shot noise is generated by the random fluctuations in the normal current flow through the P-N junction. Because each electron carries a discrete amount of charge and the flow of electrons is subject to small random fluctuations, a noise current is generated. It has been shown that shot noise can be expressed by the following equation:
I = 2qI B
where: IN = total noise current (A) IJ = thermal or Johnson noise current (A) IS = shot noise current (A) IF = flicker noise current (A)
Thermal or Johnson Noise (IJ)

Thermal noise is a fundamental physical phenomenon generated by the random thermal motion of electrons and is present in any linear passive resistor. Photodiode thermal noise is caused by its shunt where:
dc
IS = shot noise (A, rms) Idc = dc current through the junction q = electron charge (1.6 x 10-19 coulombs) B = noise bandwidth (Hz)
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Application Notes
Like thermal noise, shot noise is independent of frequency and is also called "white noise". Shot noise may become significant when either high leakage photodiodes are used in reverse bias or when very weak signals must be detected. For example: For a photodiode with ID = 100 nA, the resultant shot noise will be:
I B = S = 2qI dc 19 100 10 9
where: NEP = noise equivalent power ( W Hz ) IN = noise current ( A Hz ) SR = peak radiant sensitivity (A/W) NEP values range from about 10-15 W Hz for small area, low noise silicon photodiodes, to over 10-12 W Hz for large area cells. PerkinElmer's VTB (blue enhanced series) and VTP (fast response series) are among the lowest noise photodiodes with NEP values on the order of 10-15 W Hz , and the VTS (solar processed, large area series) photodiode NEP values are on the order of 10-13 W Hz .
2 1.6 10
= 0.18 pA (rms) Hz
Flicker or 1/f Noise

Flicker noise is one of the least understood. It is usually attributed to manufacturing noise mechanisms or device surface states. Experimental data shows that this type of noise has a dependence on dc current and is similar to shot noise. A general equation for this type of noise follows:
I F = KI dc Bf
Detectivity (D)
The inverse value of NEP is the detectivity (detection capability). The detectivity is a measure of the least detectable radiant power or detector signal to noise ratio. A higher D indicates ability to detect lower levels of radiant power. D = 1/NEP where: D = detectivity ( Hz W ) Since noise is normally proportional to the square root of the photosensitive area, the smaller the photosensitive area (AD), the better the apparent NEP and detectivity. The specific detectivity D* (D-Star) takes account of this factor and produces a figure of merit which is area independent. By definition: D* = D A D where: D* = specific detectivity (cm Hz W ) AD = photodiode active area D* values range from as high as 1013 (c m Hz W ) to as low as 1011 (c m Hz W ) . Both NEP and D* may be expressed either as an absolute or relative with respect to values at a given wavelength or at peak sensitivity.
where: IF = flicker noise (A) K = a constant that depends on the type of material and its geometry. Idc = dc junction current (A) B = bandwidth of interest (Hz) f = frequency (Hz) Unlike thermal and shot noises, flicker noise has 1/f spectral density and in the ideal case for which If is exactly proportional to 1 f , it is termed "pink noise". Unfortunately, the constant (K) can only be determined empirically and may vary greatly even for similar devices. Flicker noise may dominate when the bandwidth of interest contains frequencies less than about 1 kHz.
Noise Equivalent Power (NEP)

The lower limit of light detection for a photodiode is expressed as the intensity of incident light required to generate a current equal to the noise current, IN. This limit is referred to as Noise Equivalent Power, NEP and is defined as follows:
NEP = I N S R
135
Application Notes
Photodiode Noise Measurement
Photodiode noise current can be measured directly. A very low noise, high gain, broadband current to voltage converter amplifier is required along with a band pass filter and a true rms volt meter. A typical measurement circuit is shown below. where: ND = photodiode noise voltage (V) NS = system noise voltage (V) Photodiode noise current
IN = N D ( RF B )
where: RF = feedback resistor (ohms) B = bandwidth (Hz) Photodiode noise equivalent power
NEP = I N S R
Detectivity where: DUT = photodiode under test VB = variable low noise dc power supply A = low noise broadband amplifier RF = feedback resistor NOTE: A wave analyzer with true rms read out can be used in place of bandpass filter and true rms DVM.
LOWER NOISE SMALL LARGE SMALL SMALL PARAMETER ACTIVE AREA SHUNT RESISTANCE DARK CURRENT JUNCTION CAPACITANCE HIGHER NOISE LARGE SMALL LARGE LARGE
D = 1 ( NEP )
D* = D A D
Test Procedure
Set wave analyzer frequency span @ 1 kHz and resolution bandwidth @ 30 Hz. Connect the output of amplifier A to the wave analyzer input. Adjust the well regulated and low noise power supply to set the required bias voltage. Measure the system noise, NS, by inserting a capacitance equal to the photodiode's junction capacitance, CJ, at the operating reverse bias voltage between power supply and amplifier. Replace the above capacitance by the photodiode and measure the system plus Photodiode noise, NS + ND. Calculate the photodiode's current noise (IN) as follows: Photodiode noise voltage
ND = ( NS + ND ) NS
2 2
APPLICATION NOTE #6 Processes

Photodiodes find use in a wide range of applications because they can be made with a wide range of performance characteristics. Each application places different demands on their performance. It is often desirable to enhance one or more of the photodiodes performance characteristics such as sensitivity to a particular wavelength of light, speed of response, shunt resistance, etc. Within certain constraints this can be accomplished through the choice of method of crystal growth, resistivity, crystal orientation, carrier lifetime, and other properties of the silicon wafer as well as through wafer processing and photodiode chip layout. PerkinElmer offers three standard silicon diode processes. Each process represents a different trade-off in diode performance characteristics. The following charts list the three standard processes and illustrate the tradeoffs.
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Application Notes
PROCESS VTB VTP VTS DESCRIPTION PACKAGED DEVICES BLUE ENHANCED FAST RESPONSE LARGE AREA DEVICES LOW CAPACITANCE
PerkinElmer also has the capability to design and manufacture custom multichannel arrays of various configurations. There are two general categories of arrays: monolithic and hybrid. Monolithic arrays have all detector elements incorporated within one silicon chip. Hybrid arrays are arrays assembled by placing individual detector chips down onto some sort of substrate, usually ceramic or printed circuit board. Tooling costs and lead times can become a major concern if a monolithic array chip must be made from scratch. A possible alternative, should the geometries work out, is to cut out a block of discrete photodiode chips from the parent silicon wafer, thus eliminating the need to tool a custom array. However, for this approach to work, an existing detector chip must be found not only with the same active area as a single element of the array, but the spacing between the diodes on the wafer must be the same as the center-to-center spacing required for the array.
Diode Characteristics
VTB PROCESS LOWER HIGHER HIGHER LOWER HIGHER HIGHER LOWER PARAMETER SR@2850K SR@400nm VOC ID RSH CJ VBR VTP PROCESS HIGHER LOWER LOWER HIGHER LOWER LOWER HIGHER
APPLICATION NOTE #7 Array and Custom Detector Guidelines

Semicustom and fully custom photodiodes can be used to deliver performance not available from catalog devices. PerkinElmer offers a full spectrum of specialized or custom services ranging from the sorting of stock devices for some electrical characteristic such as VBR, RD, or ID; to placing a stock chip in a package it is not usually supplied in; to the use of filters incorporated into the package in order to modify the spectral response; to a totally custom chip and/or package design involving a major tooling effort.
LEVEL OF CUSTOMIZING CUSTOM ELECTRICAL SORT OF EXISTING STOCK DEVICE SUPPLY EXISTING CHIP IN A DIFFERENT PACKAGE TOOL CUSTOM CHIP AND/OR TOOL CUSTOM HOUSING WHEN JUSTIFIED MODERATE VOLUMES HIGH VOLUMES HIGH VOLUMES
NOTES QUICK TURNAROUND LONGER LEAD TIMES, NRE* LONGEST LEAD TIMES, NRE, TOOLING
* NRE - NON RECURRING ENGINEERING CHARGE
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Application Notes
Comparison of Monolithic and Hybrid Arrays
MONOLITHIC COMMON CATHODE LESS (ONE CHIP) LONGER* LESS TIGHTER PARAMETER ELECTICAL CONFIGURATION COMPLEXITY OF PACKAGE LEADTIMES PACKAGING COSTS DIMENSIONAL TOLERANCES HYBRID FLEXIBLE MORE (MULTIPLE CHIPS) SHORTER **MORE LOOSER
exposed to these terms, experience a certain amount of confusion caused by the two systems of measurement, the photometric and the radiometric. The photometric system defines light in terms of how it is perceived by the human eye. The eye's sensitivity is dependent on the wavelength or color of the light. Peak sensitivity occurs in the green part of the visible spectrum while the eye's response to infrared or ultraviolet is zero. The radiometric system describes light quantities in physical rather than eye response terms. The baseline detector used in the radiometric system has uniform sensitivity across the entire spectrum. Radiometric measurements can be made with thermopiles whose response does not vary with wavelength. Both systems have their place. When specifying room lighting, it makes sense to use photometric units. However, if the application involves transmitting data over a beam of infrared light, the output of the light source and the sensitivity of the detector must be specified using radiometric units. PerkinElmer makes use of the symbol H, (the original term for radiant incidence) when specifying the lighting conditions under which its detectors are measured for sensitivity. This symbol appears regardless if photometric (fc) or radiometric (W/cm2) incidence is being specified.
* TOTAL CUSTOM DESIGN ** PATTERNED METALLIZED SUBSTRATE OFTEN NEED TO BE TOOLED
Since arrays tend to be custom in nature, it is important for the customer to supply PerkinElmer with enough information to achieve the most cost effective design for the particular application. The information required includes the following: 1. 2. 3. 4. 5. 6. 7. 8. 9. Number of light detecting elements Desired layout Active area of each element Center-to-center spacing between elements Electrical configuration (common cathode, etc.) Packaging requirements - including pin-out configuration Anticipated volumes Price goals Desired delivery date
APPLICATION NOTE #8 Photometric and Radiometric Terms

In order to describe the sensitivity of photodetectors or the brightness of light sources, it is necessary to define the amount of light being emitted or detected in quantitative terms. Many individuals, when first
Relative Spectral Response of Photometric and Radiometric Detectors
138
Application Notes
Commonly Used Terms
TERM DEFINITION NOMENCLATURE e - (Radiometric) v - (Photometric) DESCRIPTION Radiant Flux (Radiant Power) Luminous Intensity Radiant Incidence (Irradiance) Luminous Incidence (Note 2) Radiant Exitance (Emittance) Luminous Exitance EQUATION UNITS W, Watts
Flux,
Rate of flow of energy (Q) to, from or through a surface
dQ e -------dt dQv -------dt d e --------dA d v --------dA d v --------dA d v --------dA
lm, lumens W/cm2
Incidence, E (Note 1)
Flux per unit area falling perpendicularly upon a surface
Ee - (Radiometric)
Ev - (Photometric)
lx, lux (lm/m2)
Me - (Radiometric) Exitance, M Flux per unit area from an emitting surface Mv - (Radiometric) A solid angle with its apex at the center of a sphere of radius, r, defines a spherical surface area, S, such that =S/r2 Ie - (Radiometric)
W/m2
lm/m2
Solid Angle,
dS d = ----2 r d e --------d d v --------d d e ------------------dA cos d e -------------------------d dA cos d v ------------------dA cos d v -------------------------d dA cos
2 2
sr, Steradians
Intensity, I
Flux per unit solid angle radiating from a point source
Radiant Intensity
W/sr
Iv = (Photometric)
Luminous Intensity
cd, candelas (lm/sr)
Le - (Radiometric) Flux per unit solid angle per unit area of emitting surface at angle with respect to the surface normal Lv - (Photometric)
Radiant Sterance (Radiance)
W/(sr m2)
Sterance, L
Luminous Sterance (Luminance) (Note 3)
cd/m2
Notes:
1. 2. For historical continuity, PerkinElmer uses the symbol H in the data sheets of this catalog. Other units for luminous intensity are: Phot, ph lm/cm2 Footcandle, fc lm/ft2 (1 fc = 10.76 lux)
3.
Other units for luminous sterance are: Lambert, L 1/cd/cm2 Foot lambert, fL 1/cd/ft2 Apostilb, asb 1/cd/m2 Stilb, sb cd/cm2
139
Application Notes
APPLICATION NOTE #9
The Effect of Packaging on the Light Output of IREDs
When an IRED Is forward biased a percentage of the injected carriers which recombine in the vicinity of the P-N junction result in the generation of photons. Not all of the generated light is able to emerge from the interior of the IRED chip due to these power loss mechanisms: 1. 2. 3. absorption Fresnel losses internal reflection n1 = index of refraction of the IRED n2 = index of refraction of the material surrounding the chip For a GaAs IRED chip emitting directly into air: the interface between the two materials. This reflected power is called the fresnel loss. For normal incidence, the Fresnel loss efficiency factor is given by:
4 FR = ----------------------------------------------2 n2 + n2 n1 + n1 n2
where:
Mounting the IRED die in a package not only serves to protect it from a potentially hostile environment but can also be used to increase the useful power output by compensating for these losses. As photons travel outward through the chip from the junction region there is a probability that absorption will take place. The longer the travel distance the greater the internal absorption. This is the reason that smaller IRED sizes exhibit the highest power conversion efficiencies. Because the P-N junction extends to and is exposed at the four sides of the chip, a large percentage of the total light output is emitted from these sides. By mounting the IRED chip in a contoured cavity it is possible to collect a larger percentage of this side emitted light and reflect it upwards.
4 FR = --------------------------------------------------------- = 82% ( 1 + 1 3.62 ) + ( 3.62 1 )

Hence only 82% of the light reaching the chips surface exits the chip. More light power can be extracted from the chip by coating it with a matching material whose index of refraction lies between that of the chips and that of air. When an index matching material is used the transmission efficiency can be increased to over 90%. Optimum transmission efficiency is achieved when the index matching material used has an index of refraction of n 1 n2 . Loss also occurs due to total internal reflection. If photons of light are incident to the chips surface at angles greater than the critical angle they are reflected back into the crystal.
C = sin ( n 2 n 1 ) @ 16 (for GaAIAs)

where: C = critical angle n1 = index of refraction of the LED n2 = index of refraction of the material surrounding the chip When light travels from a material with index of refraction n1 into a medium with index of refraction n2 some of the light is reflected back at This situation can be improved by coating the LED chip with a plastic encapsulant.
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Application Notes
reflowed lens show considerable variation. They do not have closely repeatable optical geometry. The focal point, direction, and uniformity of the emitted beam of light show significant variation from unit to unit. Plastic IREDs have only one optical surface in the lens system. The shape of this lens is controlled by the casting mold or transfer mold. The optical characteristics are more uniform from unit to unit. So, plastic IREDs have a more consistent beam pattern than hermetic IREDs.
C = sin1(nx/n1) = sin1(1.30/3.62) 21
Lenses, incorporated into the IRED package, can be used to increase the useable forward power intensity by focusing the light emitted by the IRED.
Hermetic Package
The lenses used on metal/glass hermetic packages are made from a glass whose thermal coefficient of expansion closely matches that of the Kovar (iron-nickel-cobalt alloy) package. For IREDs which use leadframe construction, lenses can be made an integral part of the cast of molded package.
Plastic/Leadframe Package
The lenses used on IRED are not precision ground. Expect variations in the light pattern from unit to unit due to lens quality, variations in chip placement, shape of the reflector cavity, number and type of material interfaces, and distance from the lens to the IRED chip. The glass lens used in hermetic packages is formed by melting and reflowing a cut glass disc. The overall dimensions and geometry of this
IREDs of plastic/leadframe package design have two fewer dielectric interfaces than do IREDs in hermetic packages. As a result plastic packages generally deliver up to 50% more useable focused power than hermetic packages.
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Application Notes
APPLICATION NOTE #10
Characterization of IRED Power Output
Almost all applications have an optical geometry containing a detector of a certain physical area that intercepts a portion of a beam of IR power emitted by the IRED.
Wide Angle IRED
This note explains the conceptual relationship between this basic geometry and several ways used to measure and sort IREDs in manufacturing.
Total Power Output:

This is the quantity which is easiest to measure with a high degree of reproducibility. The measurement set-up consists of some physical approximation to an integrating sphere. Nearly all of the power emitted by the IRED is collected and measured.
Narrow Angle IRED
Manufacturers commonly rate their IREDs by power output in milliwatts at a specified drive current. However, the specs will also include a half power beam angle, 1/2. The half power beam angle can be used as a semi-quantitative guide to predict the behavior of the IRED in a given application. Within certain limits, narrow angle IREDs will contain more power in their beam than wide angle IREDs.
Radiant Intensity
Radiant intensity is defined as:
Advantages:
Easy to get reproducible measurements Independent of optical irregularities in the IRED lens Independent of variations in mechanical positioning of the IRED under test. where:
Ie = W/
= acceptance angle in steradians and is normally applied to the far field radiation pattern where the IRED an be approximated as a point source of power (viewing distance is at least ten times greater than the IRED lens diameter). Since it is defined in terms of power per solid angle, the radiant intensity is independent of the distance from the IRED.
Disadvantage:
Total power output does not describe the beam pattern of the IRED (spatial distribution of emitted power). It provides incomplete information for the optical designer.
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Application Notes
In practice, the radiant intensity is measured by clamping the body of the IRED (thus establishing its mechanical axis) and measuring the output of a photodetector of diameter D. The solid angle is: (/4 D2)/d2 and the IREDs are sorted into radiant intensity bins of xx mW/sr. It is important that the solid acceptance angle of the measuring apparatus be small enough to produce an essentially constant irradiance over the surface of the detector. Otherwise, different diameter detectors will produce different measured values of radiant intensity. Generally, the measuring solid angle is in the vicinity of 0.01 sr (steradians). Each manufacturer usually lists the steridian value of the test apparatus in the data sheet footnotes. practicalbut geometry dependentquantity. It should be noted that Irradiance has a precise mathematical definition in geometrical optics and is easy to calculate in the case of a sufficiently small diameter detector moved into the far field radiation pattern of the IRED. Typical cone angles are in the range of 10 to 30 degrees. Larger cone angles give more reproducible measurements. However, larger cone angles reduce the absolute accuracy of the irradiance measurement since the radiant flux density (power density) emitted by the IRED is usually not constant over a large diameter.
Advantages of Radiant Intensity Measurement:

The designer can use Radiant Intensity quantitatively in many different design situations. IREDs which exceed a minimum Radiant Intensity value will usually show more consistent performance in the customers application.
Disadvantages of Radiant Intensity Measurement:

It is hard to get highly reproducible measurements of Radiant Intensity. This is because it is difficult to establish the mechanical axis of the IRED reproducibly. The optical and mechanical axis of the IRED under test almost never coincide. The IRED bodies are tapered and never exactly circular. This leads to slight variations in the position of the IRED in the measuring apparatus each time it is measured. Increased scatter in the measured values of Radiant Intensity is the result. In practice, Radiant Intensity is useful as a minimum specification only. Many applications of IREDs use a close spacing between the IRED and detector. Thus, Radiant Intensity which is measured in the far field (spacing at least ten times IRED diameter) does not quantify the available power to be coupled from the IRED.
Irradiance can be calculated from the Radiant Intensity is the far field (d/D > 10) from the relationship: Ee = Ie / d2
In summary:
Total Power Output is conventionally used throughout the industry to specify IREDs. It has the highest measurement reproducibility. Radiant Intensity is useful as a far field (d/D > 10) specification but has no use close to the IRED lens. Radiant Intensity is hard to measure accurately because of difficulty in locating and clamping the mechanical axis of the IRED.
Irradiance:
Irradiance is defined by the power which passes through an aperture (usually circular, diameter D) which is spaced at a distance d from the tip of the IREDs lens. Usually, both the aperture diameter D and the distance d are chosen to have values that are representative of many (but, unfortunately, not all) applications. Thus, Irradiance is a very
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Application Notes
Irradiance is a useful measurement technique in the near field of the IREDs beam pattern. Measuring the power through an aperture of diameter D spaced distance d from the IRED lens tip approximates many real-life application geometries. If the aperture D is large compared to the spacing d (large cone angle), the reproducibility of the irradiance measurement is improved, but, the absolute accuracy is decreased.
APPLICATION NOTE #11 IRED Axial Power Out Measurement

The on-axis power emitted by an IRED is measured by placing a detector, with a given active area, at some distance in front of the IRED and recording the average power falling upon the surface of that detector. The on-axis power is defined as an average power since more light might fall upon one portion of the detector than another. For example, a silicon photodiode with Sr @ 880 nm = .5 A/W is being used to measure the on-axis power of a GaAlAs IRED. When a current meter is attached to the diode, a short circuit current, ISC, of 50 A is read.
To perform these calculations, the designer needs to know the on-axis power intensity of the IRED. The on-axis power intensity can be states as an irradiance, Ee (mW/cm2) or as a radiant intensity, Ie (mW/sr). We will deal with radiant intensity shortly, for the moment lets study irradiance and how the diameter of the detector used and distance from the emitter to detector affects the detector. The graph presented below illustrates the relationship between Ee and the size of the detector used to make the measurement. If the diameter of the detector is a good deal smaller than the distance between the detector and the IRED being measured, then Ee is independent of the size of the detector.
On-Axis Power = 50 A 0.5A/W = 100 W Thus, 100 W of power is incident on the photodiode. It might all fall on one portion or it might be evenly distributed over the entire surface of the detector. The measurement of on-axis power is informative and could be used to compare the output of IREDs in packages of the same lens type. However, it does nothing to help the designer who needs to know what their magnitude of output can be expected from a detector of a different active area and sensitivity positioned at different distances from the IRED.
Irradiance vs. Diameter of Detector Used
In most practical cases, spacing (d) is much larger than detector diameter (D). The Ee obtained is then an accurate quantity, independent of the optical geometry and can be used to calculate the output signal for detector/IRED combinations. Here is an example of such a calculation. A silicon photodiode with an active area of .100" x .100" and an Sr @ 880 nm = 0.5 A/W is positioned 6 cm in front of a lensed IRED and then in front of an IRED with no focusing lens. The total power output of each IRED is identical. What is the output signal from the detector for both cases?
144
Application Notes
means that the diameter of the light source is less than 1/10 the distance between the emitter and detector. As already mentioned, on-axis power intensity can also be described in terms of radiant intensity, Ie. Radiant intensity defines on-axis power intensity as power per solid angle (mW/sr). The concept of a solid angle is described by the figure below. A cone of a solid angle , has its apex at the center of a sphere of radius R and defines an area A, on that sphere as that = A / R2 r2 / R2
Irradiance vs. Distance - Emitter to Detector
(sr)
The unit of measurement is the steradian (sr). From the graph, the Ee for both IRED/detector combinations can be found. For the case of the lensed IRED: ISC = .5 A/W x .0645 cm2 x 11 mW/cm2 = 355 A For the case of the unlensed IRED: ISC = .5 A/W x .0645 cm2 x .44 mW/cm2 = 14.2 A In some cases the Irradiance vs. Distance curve may not provide data at the separation distance(s) of interest, or the curve itself may not be available. In such situations, if the irradiance is known at one distance of separation, Ee can be calculated by use of the inverse square law. Ee @ d2 = Ee @ d1/[d2/d1]2 For example, lets consider the output signal from the photodiode/ lensed IRED pair used above when they are 30 cm apart. Ee = 11 mW/cm2 / [30 cm / 6 cm]2 = .44 mW/cm2 ISC = .5 A/W x .0654 cm2 x .44 mW/cm2 = 14.2 A Note: The inverse square law assumes that the light source (IRED) appears as a point source to the detector. In practical terms this Example: A photodiode, with a circular active area .50 cm in diameter and sensitivity @ 880 nm of .5 A/W, is located 10 cm in front of a GaAlAs IRED whose Ie = 100 mW/sr. The value of the detectors short circuit current can be calculated as: = r2 / R2 = x (.50 cm / 2)2 / (10 cm)2 = .001963 (sr) ISC = .5 A/W x 100 mW/sr x .001963 sr = 98.15 A
APPLICATION NOTE #12 IREDs With Narrow Beam Patterns

A wide angle IRED distributes its radiant flux as shown below. Most of the flux impinges on the lens surface at almost normal incidence. Little is lost to total internal reflection.
145
Application Notes
Some of the radiant flux in narrow angle IREDs is reflected internally.
Narrow Angle IRED
The side lobe power is not useful in most applications. It is lost to the optical system. Typical emission patterns (beam patterns) are shown below in both polar and rectangular coordinates.
3-D Representation of Emission Pattern of Narrow Beam IRED
Wide Angle IRED
Polar Plot of Narrow Beam IRED
146
Application Notes
APPLICATION NOTE #13 Biasing IREDs and Phototransistors
The light generated by an IRED is directly proportional to the forward current flowing through the device. Various biasing schemes can be used to set the value of the current. Some are illustrated below.
DC Bias
Rectangular Plot of Narrow Beam IRED The side lobes have less peak intensity than the main beam (particularly when viewed in rectangular coordinates). However, the side lobes subtend a much larger solid angle than does the main beam. The net result is that in narrow beam IREDs, the side lobes can actually contain most of the power emitted by the narrow beam IRED. This side lobe power is lost to the main beam and is not useful in the optical system. Thus, the peak radiant intensity increases (mW/sr), but the useful main beam power decreases (mW/cm2) as the beam width is made narrower.
MAIN BEAM HALF POWER ANGLE 40 to 60* 20* 10* 5* APPROXIMATE FRACTION OF TOTAL POWER APPEARING IN SIDE LOBES NEGLIGIBLE 10 to 20% 20 to 30% 40 to 60%
IF = VCC VF / RF RF = VCC VF / IF Example: Select RF such that IF = 20 mA for a GaAlAs IRED. VCC = 5 V From the data sheets: VF (TYP) @ IF = 20 mA: 1.25 V R = (5 1.25) V / 20 mA = 187.5 Closest standard resistor value = 180 IF (TYP) = (5 1.25)/180 21 mA
Applications that require maximum useful power and a narrow beam should use a wide angle LED coupled to an external lens to maximize the power coupled into the optical system.
AC Bias
When AC biasing an IRED, it is important to prevent the applied IRED voltage from exceeding the maximum rated reverse voltage to avoid damaging the IRED.
147
Application Notes
IO ICE1 The following approach can be used to switch a voltage greater than the VBRCEO of the phototransistor. The highest collector-emitter voltage seen by the phototransistor is the base-emitter voltage of the high voltage transistor.
For circuit interfacing, phototransistors can be treated as any general purpose small signal transistor. The only exception being that phototransistors are driven by incident light rather than by an applied base current. While capable of linear operation over a limited range of light intensities, phototransistors are normally used as a switch. As such, the designer is primarily concerned with the two boundary conditions; the equivalent on and off positions.
APPLICATION NOTE #14 Discrete Chips - An Alternative Solution to Space Problems

Space restrictions may preclude the use of packaged detectors or emitters in some applications. In these cases the use of discrete chips might be appropriate because of their small size. PerkinElmer offers IREDs and phototransistors in unpackaged die formready for hybrid assembly. Chips are supplied loose in vials, in waffle pack chip carriers, or as probed and inked wafers.
Position OFF Position ON Position
Ideal VCC 0
Actual (VCC RL IDARK) VCE(SAT)
Conductive silver epoxy is commonly used for die attach. This method involves dispensing tightly controlled amounts of the epoxy either manually or with automatic equipment. The chip is placed on the epoxy which is then cured at moderate temperatures. Connections are made to the metallized contact pads on the top surface of the chip by bonding very fine wires of aluminum or gold from these pads to the package. Typically, thermosonic ball or ultrasonic wedge wire bonding is used. After wire bonding, the chip must be protected from the environment by either sealing it within an appropriate housing or by coating the chip with a clear epoxy or silicone designed for coating semiconductor die. This prevents moisture and contaminates from attacking the chip and wirebonds. PerkinElmer offers assembly services for those customers who are not equipped for hybrid circuit manufacturing.
Note that VCE(SAT)1 > VCE(SAT)2. At times it may be necessary to extend the voltage or current capacity of the phototransistor. Current capacity can be increased by using the phototransistor to drive a second transistor (Darlington arrangement).
148
Application Notes
Detector Chips (Dice)
PerkinElmers stock chips are 100% probed for dc current gain, dark current, collector & emitter breakdown voltages, and collector-emitter saturation voltage. PerkinElmer can also provide special testing to meet your custom requirements. Emitter (E) and Base (B) aluminum metallized bond parts are provided on the top surface of every phototransistor and photodarlington chip. Some devices also have a collector bond pad on the top surface of the die. For all chips, contact to the collector can be made through the backside of the die, the entire surface of which is metallized with nickel. Custom single and multichannel detectors can be tooled if stock devices are unable to meet the requirements of your application.
Bad Die Attach
Always use very small amounts of die attach epoxy. Keep the maximum epoxy height less than 1/4 of the height of the IRED chip.
Emitter (IRED) Chips

PerkinElmers stock IRED chips are sample probed for forward voltage at a given current drive, reverse leakage current, and power output. Light output cannot be measured for individual chips while they are in wafer form. Anode contact is made through the backside (bottom) of the chip. Cathode contact is available through the bonding pad(s) on the top surface. A gold metallization system is employed on both the top and bottom surfaces. Silver conductive epoxy is recommended for die attach. Thermosonic gold ball bonding is recommended for the top contact. Special note on die attach epoxy slop. Remember: all high efficiency output IR emitting dice have an electrically exposed P-N junction that appears on all four sides of the die. Conductive epoxy placed or slopped over the P-N junction can cause a total, partial, or even a time-varying electrical short circuit of the IRED die.
APPLICATION NOTE #15 Handling and Soldering Opto Components

Care must be taken in the handling and soldering of all opto components, especially those that use a cast or molded plastic and lead frame construction. In lead frame type construction, the detector chip is mounted directly to one lead and a wire bond is made from the chip to the other lead. The encapsulating plastic is the only support for the lead frame. Unlike the familiar black plastic IC packages, clear opto epoxies have no fiberglass filler. Thus, they are not as strong as plastic IC packages. Care must by taken when forming the leads of plastic opto packages. Excessive mechanical force can cause the leads to move inside the plastic package and damage the wire bonds. Weakened bonds can then open up under further mechanical or thermal stressing, producing open circuits. In order to form leads safely, it is necessary to firmly clamp the leads near the base of the package in order not to transfer any force (particularly tension forces) to the plastic body. This can be accomplished either through use of properly designed tooling or by firmly gripping the leads below the base of the package with a pair of needle nose pliers while the leads are being bent.
Good Die Attach
149
Application Notes
on the leads determines the type of flux to use when soldering devices with silver plated leads.
Condition of Leads Clear Bright Finish (Tarnish Free) Dull Finish (Minimal Tarnish) Recommended Flux RMA - Mildly Activated RMA - Mildly Activated RA - Activated AC - Water Soluble, Organic Acid Flux
Examples of Tooling Fixtures Used to Form Leads
Light Yellow Tint (Mild Tarnish) Light Yellow/Tan Color (Moderate Tarnish)
For highest reliability, avoid flush mounting the plastic body of the printed circuit board. This minimizes mechanical stresses set up between the circuit board and the plastic packages. it also reduces solder heat damage to the plastic package.
Dark Tan/Black Color (Heavy Tarnish) Leads Need to be Cleaned Prior to Soldering
Cleaners designed for the removal of tarnish from the leads of electronic components are acidic and it is best to keep to immersion time as short as possible (less than 2 seconds) and to immediately wash all devices thoroughly in ten rinses of deionized water. The best policy is one which prevents tarnish from forming. Tarnish, which is a compound formed when silver reacts with sulfur (Ag2S), can be prevented by keeping the components away from sulfur or sulfur compounds. Since two major sources of sulfur are room air and paper products, it is best to store the devices in protective packaging such as silver saver paper of tightly sealed polyethylene bags. After soldering, it is necessary to clean the components to remove any rosin and ionic residues. For a listing of recommended cleaning agents please refer to Application Note # 16.
Good printed circuit board layout avoids putting spreading (plastic under tension) force of the leads of a plastic package.
APPLICATION NOTE #16 Recommended Cleaning Agents

PerkinElmer offers many devices in a number of package styles which employ a wide range of construction techniques. Package styles include: 1. 2. 3. hermetically sealed glass/metal packages cast and molded leadframe packages ceramic or metal headers covered with a layer of clear epoxy (blob-top construction).
When hand soldering, it is important to limit the maximum temperature of the iron by controlling the power. It is best if a 15W or 25W iron is used. The maximum recommended lead soldering temperature (1/16" from the case for 5 seconds) is 260C. An RMA rosin core solder is recommended. Sn60 (60% tin/40% lead) solder is recommended for wave soldering opto components into printed circuit boards, other alternatives are Sn62 and Sn63. The maximum recommended soldering temperature is 260C with a maximum duration of 5 seconds. The amount of tarnish
Some packages are more resistant to attack by chemical cleaning than others. Blob-top construction is the least resistant. Cast or molded leadframe packages offer better resistance. Of course, the glass/metal hermetic packages are the most chemically resistant of all.
150
Application Notes
RECOMMENDED
ARKLONE A ARKLONE K ARKLONE F BLACO-TRON DE-15 BLACO-TRON DI-15
NOT RECOMMENDED
ACETONE CARBON TETRACHLORIDE METHYL ETHYL KETONE METHYLENE CHLORIDE TRICHLOROETHYLENE (TCE) XYLENE TRICHLOROETHANE FC-111 TRICHLOROETHANE FC-112 FREON TF FREON TA FREON TMC FREON TMS GENESOLV DA GENESOLV DM GENESOLV DMS
In many cases the devices will be exposed to a post solder cleaning operation which uses one or more solvents to remove the residual solder flux and ionic contaminants. Only certain cleaning solvents are compatible with the plastics typically used in optoelectronic device packages. This listing of recommended/not-recommended solvents represents only a very small percentage of available chemical cleaning agents. Even with this list of recommended solvents it is important to be aware that: 1. 2. 3. Solvent exposure times should be as short as possible. The exact requirement of the cleaning process will vary from customer to customer and application to application. Additives and concentrations will vary from supplier to supplier.
FREON TE FREON TES FREON TE-35 FREON TP FREON TF-35 GENESOLV D GENESOLV DE-15 GENESOLV DI-15 ISOPROPYL ALCOHOL WATER
Because of these uncertainties, our recommendation is that all customers carefully evaluate their own cleaning process and draw their own conclusions about the effectiveness and reliability of the process. PerkinElmer cannot assume any responsibility for damage caused by the use of any of the solvents above or any other solvents used in a cleaning process.
151
PerkinElmer Optoelectronics Warranty Statement

PerkinElmer Optoelectronics warrants that all items sold will be free from defects in materials and workmanship under normal use and service for a period of one year from the date of shipment. If PerkinElmer Optoelectronics receives notice of such defects during the warranty period, PerkinElmer Optoelectronics shall, at its option, repair or replace any defective components or credit the purchaser's account with the purchase price paid. This warranty shall not apply to items that have been (a) subject to misuse, neglect, accident, damage in transit, abuse or unusual hazard; (b) altered, modified or repaired by anyone other than PerkinElmer Optoelectronics; or (c) used in violation of instructions furnished by PerkinElmer Optoelectronics. The Buyer should contact PerkinElmer Optoelectronics for a return authorization number prior to shipping returned parts. The specific PerkinElmer Optoelectronics' products shown in this catalog are not authorized or recommended for use as critical components in life support systems or in surgical implant devices wherein a failure or malfunction of the PerkinElmer Optoelectronics product may directly threaten life or cause personal injury. The Buyer agrees to notify PerkinElmer Optoelectronics of any such intended application and to proceed only after receiving the expressed written approval of an officer of PerkinElmer Optoelectronics. Additionally, the user of PerkinElmer Optoelectronics components in life support or implant applications assumes all risks of such use and indemnifies PerkinElmer Optoelectronics against all damages. In order to provide the best possible products, PerkinElmer Optoelectronics reserves the right to change specifications without prior notice. Information supplied in PerkinElmer Optoelectronics' catalogs, data sheets, and other literature, and information supplied by PerkinElmer Optoelectronics' technical support personnel is believed to be reliable, however, PerkinElmer Optoelectronics cannot assume responsibility for omissions, errors, or misapplication of this information. It is the responsibility of the Buyer to determine the suitability of PerkinElmer Optoelectronics/ products and recommendations in his own specific application, particularly when the products are operated at or near their maximum rating specifications. No license is granted by implication or otherwise of any patent, copyright, or trademark right of PerkinElmer Optoelectronics or others. PerkinElmer Optoelectronics' warranty, as stated above, shall not be affected or changed by, and no obligation or liability shall grow out of, PerkinElmer Optoelectronics' providing technical advice or service to the Buyer. PERKINELMER OPTOELECTRONICS MAKES NO OTHER WARRANTIES, EXPRESSED OR IMPLIED, AND EXPRESSLY EXCLUDES AND DISCLAIMS ANY WARRANTIES OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. THE REMEDIES PROVIDED HEREIN ARE THE BUYER'S SOLE EXCLUSIVE REMEDIES. PERKINELMER OPTOELECTRONICS SHALL NOT BE LIABLE FOR ANY INDIRECT, SPECIAL, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, WHETHER BASED ON CONTRACT, TORT, OR ANY LEGAL THEORY. PERKINELMER OPTOELECTRONICS' LIABILITY ON ANY CLAIM SHALL IN NO CASE EXCEED THE PRICE ALLOCABLE TO THE ITEM WHICH GIVES RISE TO THE CLAIM.
Quality Statement
PerkinElmer Optoelectronics business is the design, development, and production of optoelectronic components and assemblies. Our development and manufacturing activities focus on achieving and maintaining consistent product quality and high levels of reliability. PerkinElmer produces devices and assemblies for the commercial, industrial, automotive, and medical markets. PerkinElmers commitment to quality emphasizes designed-in quality, problem prevention, and closed loop corrective action. This concept of quality is implemented through the use of fully documented procedures, in-process monitoring and process control (including SPC), and 100% production testing of devices using state-of-the-art automated test equipment. As a world class manufacturer, PerkinElmers concept of product quality includes Total Quality Management (TQM) and Just In Time (JIT) delivery. Quality is a measure of how well a device conforms to its specifications. Reliability is a measure of how well a device performs over time. PerkinElmer insures the reliability of its products by careful design and by the periodic testing of random samples taken from the manufacturing lines. Reliability tests include temperature cycles, thermal shock, room ambient life tests, elevated temperature life tests, high and low temperature storage, temperature/humidity tests, and water immersion. PerkinElmer also performs special tests covering a wide range of environmental and life stress conditions to support non-standard, custom applications. The information generated not only assures the customer that the device will work well in a particular application, but also contributes to our data base for continual product improvement. Driven by our goal of continuous improvement and the needs of customers, PerkinElmer runs an active product improvement program. PerkinElmer continuously evaluates new materials, manufacturing processes, and packaging systems in order to provide our customers with the best possible product. PerkinElmers quality works: we are an ISO 9000 and QS 9000 certified supplier (ship to stock - no inspection required) to a number of major customers.
Additional Sensor Products Catalogs
USA: PerkinElmer Optoelectronics 10900 Page Avenue St. Louis, MO 63132 Phone: (314) 423-4900 Fax: (314) 423-3956
Europe: PerkinElmer Optoelectronics Wenzel-Jaksch-Str. 31 D-65199 Wiesbaden Germany Phone: +49 611 492 0 Fax: +49 611 492 170
Asia: PerkinElmer Optoelectronics Room 1404, Kodak House II 39 Healthy Street East North Point, Hong Kong Phone: 852 2590 0238 Fax: 852 2590 0513
2001 PerkinElmer, Inc. All rights reserved.
CA-272 Rev A 1001
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Optoelectronics

Lighting Imaging Telecom Sensors

Detectors and Sensors

Photodiodes, Phototransistors and Infrared Emitters

Specialty Lighting Digital Imaging Telecom Sensors

Custom and Semi-Custom IREDs and Detectors

General Notes on Products in this Catalog

Visible Blocking Filter Devices

Absolute Maximum Ratings

Part Numbers and Binning Conventions

Optoelectronic Dice: Quality Emitters & Photodetectors

Some of the More Popular Chip Products Include:

Photodiode Part Number Index

Photodiode Selection Guide

Visible Blocking Filter

Clear Lensed Ceramic Low Capacitance, Large Area

LENSED CERAMIC VTB4051 Blue Enhanced 28

Photodiode Selection Guide

VTP5050 CASE 14 TO-5 (2 LEAD)

Blue Enhanced, Isolated Chip

Blue Enhanced, UV Transmitting Window Isolated Chip

TO-5 (3 LEAD) VTB6061 Blue Enhanced 34

Blue Enhanced, Isolated Chip

Blue Enhanced, UV Transmitting Window Isolated Chip

CASE 15A TO-8 (3 LEAD)

Photodiode Selection Guide

Blue Enhanced, Infared Rejection Filter

VTP1012 CASE 17 TO-46 VTB1112 VTB1113

Blue Enhanced, Infared Rejection Filter

VTP1112 CASE 19 TO-46 LENSED

VTP9412 CASE 20 6 mm CERAMIC

Blue Enhanced, Infared Rejection Filter

Photodiode Selection Guide

VTP8440 CASE 21 8 mm CERAMIC

Blue Enhanced, Infared Rejection Filter

8 mm CERAMIC (FILTERED) VTD34 BPW34 Equivalent 73

BPW34 Equivalent Visible Rejection Filter

Low Capacitance Visible Rejection Filter

Large Dectecting Area Low Capacitance

Photodiode Selection Guide

VTS2086 VTS3086 VTS3186

Low Capacitance, Large Area, Solder Contacts

Photodiode Selection Guide

VTP3410LA CASE 50A LONG T-1

Low Capacitance Visible Rejection Filter

Low Capacitance Visible Rejection Filter

Photodiode Selection Guide

Low Capacitance Visible Rejection Filter

VTP100C CASE 52 FLAT SIDELOOKER

Low Capacitance Clear Epoxy

SFH205 Equivalent Visible Rejection Filter Low Capacitance

VTD205K CASE 60 TO-92 TYPE (ROUND LENS)

SFH205K Equivalent Low Capacitance

SFH206 Equivalent Visible Rejection Filter Low Capacitance

TO-92 TYPE (FLAT LENS)

Photodiode Typical Applications

Communications Fiber Optic Links Optical Communications Optical Remote Control

Photodiode Typical Applications

Basic Transimpedance Op-Amp Circuit

Light Meter (with three sensitivity ranges)

Fiber Optic Link

Photodiode Typical Applications

CAT Scan (X ray Detector)