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SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N4400/D

NPN Silicon

MAXIMUM RATINGS

COLLECTOR

3 2 BASE
3
2
BASE

1

EMITTER

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V

CEO

40

Vdc

Collector–Base Voltage

V

CBO

60

Vdc

Emitter–Base Voltage

V

EBO

6.0

Vdc

Collector Current — Continuous

 

I

C

600

mAdc

Total Device Dissipation @ T A = 25°C Derate above 25°C

 

P

D

625

mW

 

5.0

mW/°C

Total Device Dissipation @ T C = 25°C Derate above 25°C

 

P

D

1.5

Watts

 

12

mW/°C

Operating and Storage Junction Temperature Range

T J , T stg

–55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

R

JA

200

°C/W

Thermal Resistance, Junction to Case

R

JC

83.3

°C/W

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

*Motorola Preferred Device

1

1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA)

2 3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

Characteristic

 

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (1) (I C = 1.0 mAdc, I B = 0)

V

(BR)CEO

40

Vdc

Collector–Base Breakdown Voltage (I C = 0.1 mAdc, I E = 0)

V

(BR)CBO

60

Vdc

Emitter–Base Breakdown Voltage (I E = 0.1 mAdc, I C = 0)

V

(BR)EBO

6.0

Vdc

Base Cutoff Current (V CE = 35 Vdc, V EB = 0.4 Vdc)

 

I

BEV

0.1

Adc

Collector Cutoff Current (V CE = 35 Vdc, V EB = 0.4 Vdc)

 

I

CEX

0.1

Adc

1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

1
1
choices for future use and best overall value. REV 1 1 Motorola Small–Signal Transistors, FETs and

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)

 

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS (1)

 

DC

Current Gain

 

h

FE

   

(I C = 0.1 mAdc, V CE = 1.0 Vdc)

2N4401

 

20

(I C = 1.0 mAdc, V CE = 1.0 Vdc)

2N4400

20

 

2N4401

40

(I C = 10 mAdc, V CE = 1.0 Vdc)

2N4400

40

2N4401

80

(I C = 150 mAdc, V CE = 1.0 Vdc)

2N4400

50

150

 

2N4401

100

300

(I C = 500 mAdc, V CE = 2.0 Vdc)

2N4400

20

 

2N4401

40

Collector–Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc) Collector–Emitter Saturation Voltage (I C = 500 mAdc, I B = 50 mAdc)

V

CE(sat)

0.4

Vdc

 

0.75

Base–Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc) Base–Emitter Saturation Voltage (I C = 500 mAdc, I B = 50 mAdc)

V

BE(sat)

0.75

0.95

Vdc

 

1.2

SMALL–SIGNAL CHARACTERISTICS

 

Current–Gain — Bandwidth Product (I C = 20 mAdc, V CE = 10 Vdc, f = 100 MHz)

2N4400

 

f

T

200

MHz

 

2N4401

 

250

Collector–Base Capacitance (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)

 

C

cb

6.5

pF

Emitter–Base Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)

 

C

eb

30

pF

Input Impedance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)

2N4400

 

h

ie

0.5

7.5

k ohms

 

2N4401

 

1.0

15

Voltage Feedback Ratio (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)

 

h

re

0.1

8.0

X 10 –4

Small–Signal Current Gain (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)

2N4400

 

h

fe

20

250

 

2N4401

 

40

500

Output Admittance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)

 

h

oe

1.0

30

mhos

SWITCHING CHARACTERISTICS

 

Delay Time

(V CC = 30 Vdc, V BE = 2.0 Vdc, I C = 150 mAdc, I B1 = 15 mAdc)

 

t

d

15

ns

Rise Time

 

t

r

20

ns

Storage Time

(V CC = 30 Vdc, I C = 150 mAdc,

 

t

s

225

ns

Fall

Time

I B1 = I B2 = 15 mAdc)

 

t

f

30

ns

1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+ 30 V 200
+ 30 V
200
2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V 200 + 30 V 200 1.0 to
+ 30 V 200
+ 30 V
200
TIME EQUIVALENT TEST CIRCUITS + 30 V 200 + 30 V 200 1.0 to 100 s,
TIME EQUIVALENT TEST CIRCUITS + 30 V 200 + 30 V 200 1.0 to 100 s,
TIME EQUIVALENT TEST CIRCUITS + 30 V 200 + 30 V 200 1.0 to 100 s,

1.0 to 100 s, DUTY CYCLE 2.0%

1.0 to 100 s,

DUTY CYCLE 2.0%

DUTY CYCLE ≈ 2.0% 1.0 to 100 s, DUTY CYCLE ≈ 2.0% +16 V 0 –2.0

+16 V

0

–2.0 V

< 2.0 ns

+16 V

0

–14 V
–14 V
1.0 k
1.0 k
2.0% +16 V 0 –2.0 V < 2.0 ns +16 V 0 –14 V 1.0 k
2.0% +16 V 0 –2.0 V < 2.0 ns +16 V 0 –14 V 1.0 k
1.0 k –4.0 V
1.0 k
–4.0 V

< 20 ns

2.0 ns +16 V 0 –14 V 1.0 k 1.0 k –4.0 V < 20 ns

C S * < 10 pF

C S * < 10 pF

Scope rise time < 4.0 ns

*Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

f , FALL TIME (ns) t, TIME (ns)t

t s , STORAGE TIME (ns) t, TIME (ns)

TRANSIENT CHARACTERISTICS

25°C 30 20 C obo 10 7.0 5.0 C cb 3.0 2.0 0.1 0.2 0.3
25°C
30
20
C obo
10
7.0
5.0
C cb
3.0
2.0
0.1 0.2 0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
CAPACITANCE (pF)

100

70

50

30

20

10

7.0

5.0

300

200

100

70

50

30

REVERSE VOLTAGE (VOLTS)

Figure 3. Capacitances I C /I B = 10 t r @V CC = 30
Figure 3. Capacitances
I C /I B
= 10
t r @V CC = 30 V
t r @V CC = 10 V
t d @V EB = 2.0
V
t d @V EB = 0
10 20
30
50
70
100
200
300
500

I C , COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time t s ′ = t s – 1/8 t f I
Figure 5. Turn–On Time
t s ′ = t s – 1/8 t f
I B1 =
I B2
I C /I B
= 10
to
20
10 20
30
50
70
100
200
300
500

I C , COLLECTOR CURRENT (mA)

Figure 7. Storage Time

100°C 10 7.0 30 V V CC = 5.0 I C /I B = 10
100°C
10
7.0
30 V
V CC =
5.0
I C /I B = 10
3.0
Q T
2.0
1.0
0.7
0.5
0.3
0.2
Q A
0.1
10 20
30 50
70
100
200
300
500
Q, CHARGE (nC)

100

70

50

30

20

10

7.0

5.0

100

70

50

30

20

10

7.0

5.0

I C , COLLECTOR CURRENT (mA)

Figure 4. Charge Data V CC = 30 V t r I C /I B
Figure 4. Charge Data
V CC = 30 V
t
r
I C /I B = 10
t f
10 20
30
50
70
100
200
300
500
I
, COLLECTOR CURRENT (mA)
C
Figure 6. Rise and Fall Times = 30 V V CC I B1 = I
Figure 6. Rise and Fall Times
= 30 V
V CC
I B1 =
I B2
I C /I B
= 20
I C /I B = 10
10 20
30
50
70
100
200
300
500
I
, COLLECTOR CURRENT (mA)
C

Figure 8. Fall Time

SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE V CE = 10 Vdc, T A = 25°C Bandwidth = 1.0 Hz

10 I C = 1.0 mA, R S = 150 I C = 500 A,
10
I C = 1.0 mA, R S =
150
I C = 500
A, R S
= 200
R S = OPTIMUM
8.0
I C = 100
A, R S
= 2.0 k
RS = SOURCE
I A,
C = 50
=
4.0 k
R S
RS = RESISTANCE
6.0
4.0
2.0
0
0.01 0.02
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
NF, NOISE FIGURE (dB)
10 f = 1.0 kHz 8.0 I C = 50 A I C = 100
10
f = 1.0 kHz
8.0
I C = 50
A
I
C = 100
A
6.0
I C = 500
A
I C = 1.0 mA
4.0
2.0
0
50 100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
100 k
NF, NOISE FIGURE (dB)

f, FREQUENCY (kHz)

Figure 9. Frequency Effects

R S , SOURCE RESISTANCE (OHMS)

Figure 10. Source Resistance Effects

h PARAMETERS V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C

This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of transistors. To obtain these curves, a high–gain and a low–gain unit were

selected from both the 2N4400 and 2N4401 lines, and the same units were used to develop the correspondingly num- bered curves on each graph.

300 200 100 70 2N4401 UNIT 1 50 2N4401 UNIT 2 2N4400 UNIT 1 2N4400
300
200
100
70
2N4401
UNIT
1
50
2N4401
UNIT
2
2N4400
UNIT
1
2N4400
UNIT
2
30
20
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I
C , COLLECTOR CURRENT (mA)
Figure 11. Current Gain
10
7.0
5.0
2N4401 UNIT 1
2N4401 UNIT 2
3.0
2N4400 UNIT 1
2.0
2N4400 UNIT 2
1.0
0.7
0.5
0.3
0.2
h re , VOLTAGE FEEDBACK RATIO (X 10
–4
)
h fe , CURRENT GAIN
50 k 2N4401 UNIT 1 2N4401 UNIT 2 20 k 2N4400 UNIT 1 2N4400 UNIT
50
k
2N4401
UNIT 1
2N4401
UNIT 2
20
k
2N4400
UNIT 1
2N4400
UNIT 2
10
k
5.0
k
2.0
k
1.0
k
500
0.1 0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
h ie , INPUT IMPEDANCE (OHMS)

I C , COLLECTOR CURRENT (mA)

Figure 12. Input Impedance

100 50 20 10 5.0 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2.0
100
50
20
10
5.0
2N4401
UNIT
1
2N4401
UNIT
2
2N4400 UNIT
1
2.0
2N4400 UNIT
2
1.0
h oe , OUTPUT ADMITTANCE (
mhos)

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

 

I

C , COLLECTOR CURRENT (mA)

 

I

C , COLLECTOR CURRENT (mA)

 

Figure 13. Voltage Feedback Ratio

Figure 14. Output Admittance

VOLTAGE (VOLTS)

STATIC CHARACTERISTICS

3.0 V CE = 1.0 V 2.0 V CE = 10 V T J =
3.0
V
CE = 1.0 V
2.0
V
CE = 10 V
T J =
125°C
1.0
25°C
0.7
0.5
– 55°C
0.3
0.2
0.1 0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
500
h
, NORMALIZED CURRENT GAIN
FE

I C , COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

1.0 T J = 25°C 0.8 0.6 I C = 1.0 mA 10 mA 100
1.0
T J =
25°C
0.8
0.6
I C =
1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.01 0.02
0.03
0.05
0.07
0.1 0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10 20
30
50
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE

I B , BASE CURRENT (mA)

Figure 16. Collector Saturation Region

1.0

= 25°C T J 10 V BE(sat) @I C /I B = 10 V V
= 25°C
T J
10
V BE(sat) @I C /I B =
10 V
V BE @V CE =
I C /I B =
10
V CE(sat) @
0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200 500

0.8

0.6

0.4

0.2

I C , COLLECTOR CURRENT (mA)

Figure 17. “On” Voltages

+0.5 0 VC for V CE(sat) –0.5 –1.0 –1.5 –2.0 for V BE VB –2.5
+0.5
0
VC
for V CE(sat)
–0.5
–1.0
–1.5
–2.0
for V BE
VB
–2.5 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
500
COEFFICIENT (mV/ C)°

I C , COLLECTOR CURRENT (mA)

Figure 18. Temperature Coefficients

PACKAGE DIMENSIONS

A R P L F SEATING K PLANE X X G H V C 1
A
R
P
L
F
SEATING
K
PLANE
X
X
G
H
V
C
1 N
N

B

D J SECTION X–X
D
J
SECTION X–X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.175

0.205

4.45

5.20

B

0.170

0.210

4.32

5.33

C

0.125

0.165

3.18

4.19

D

0.016

0.022

0.41

0.55

F

0.016

0.019

0.41

0.48

G

0.045

0.055

1.15

1.39

H

0.095

0.105

2.42

2.66

J

0.015

0.020

0.39

0.50

K

0.500

–––

12.70

–––

L

0.250

–––

6.35

–––

N

0.080

0.105

2.04

2.66

P

–––

0.100

–––

2.54

R

0.115

–––

2.93

–––

V

0.135

–––

3.43

–––

 

STYLE 1:

CASE 029–04

PIN 1.

EMITTER

(TO–226AA)

2.

BASE

3.

COLLECTOR

ISSUE AD

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

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HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N4400/D