Analog Circuits and Signal Processing

Series Editors Mohammed Ismail, The Ohio State University Mohamad Sawan, cole Polytechnique de Montral

For further volumes: http://www.springer.com/series/7381

Marcel J. van der Horst Wouter A. Serdijn Andr C. Linnenbank

EMI-Resilient Amplier Circuits

123

Marcel J. van der Horst Domein Techniek Amsterdam University of Applied Sciences Amsterdam The Netherlands Wouter A. Serdijn Faculty of Electrical Engineering Mathematics and Computer Science Delft University of Technology Delft The Netherlands

Andr C. Linnenbank Heart Center Academic Medical Center Amsterdam The Netherlands

ISBN 978-3-319-00592-8 DOI 10.1007/978-3-319-00593-5

ISBN 978-3-319-00593-5

(eBook)

Springer Cham Heidelberg New York Dordrecht London Library of Congress Control Number: 2013939068 Springer International Publishing Switzerland 2014 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microlms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. Exempted from this legal reservation are brief excerpts in connection with reviews or scholarly analysis or material supplied specically for the purpose of being entered and executed on a computer system, for exclusive use by the purchaser of the work. Duplication of this publication or parts thereof is permitted only under the provisions of the Copyright Law of the Publishers location, in its current version, and permission for use must always be obtained from Springer. Permissions for use may be obtained through RightsLink at the Copyright Clearance Center. Violations are liable to prosecution under the respective Copyright Law. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specic statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. While the advice and information in this book are believed to be true and accurate at the date of publication, neither the authors nor the editors nor the publisher can accept any legal responsibility for any errors or omissions that may be made. The publisher makes no warranty, express or implied, with respect to the material contained herein. Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com)

Contents

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 Electromagnetic Compatibility . . . . . . . . . . . . . . . . . . . 1.2 Possible Sources of Interference in Hospitals . . . . . . . . . 1.3 Examples of Electromagnetic Interference . . . . . . . . . . . 1.3.1 Examples of EMI in Medical Equipment . . . . . . . 1.3.2 Examples of EMI in Non-Medical Equipment. . . . 1.4 Regulations and Standards . . . . . . . . . . . . . . . . . . . . . . 1.5 Determining EMC Specifications. . . . . . . . . . . . . . . . . . . 1.6 Origin of Electromagnetic Interference. . . . . . . . . . . . . . 1.6.1 Additional Circumstances Affecting Interference . 1.7 Negative-Feedback Amplifiers . . . . . . . . . . . . . . . . . . . 1.7.1 A Classification of Errors in Negative-Feedback Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7.2 Signal-to-Error Ratio . . . . . . . . . . . . . . . . . . . . 1.8 Design for Electromagnetic Compatibility . . . . . . . . . . . 1.9 Outline of this Book . . . . . . . . . . . . . . . . . . . . . . . . . . References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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1 1 3 5 5 6 7 9 10 15 15 16 20 21 22 22 27 28 29 30 33 35 39 41 43 46 47 48 50

Decreasing the Disturbance Coupled to Ampliers . . . . . . . . 2.1 Coupling of Electromagnetic Fields . . . . . . . . . . . . . . . . . 2.1.1 Coupling Mechanisms . . . . . . . . . . . . . . . . . . . . 2.2 Electrical Model of the Interconnect . . . . . . . . . . . . . . . . 2.3 Intended Signal Transfer in Electrically-Small Interconnect 2.4 Intended Signal Transfer in Electrically-Large Interconnect 2.5 Parameters of Interconnects . . . . . . . . . . . . . . . . . . . . . . 2.6 Coupling of Interference to the Interconnect . . . . . . . . . . . 2.6.1 Plane Wave Coupling to Electrically-Short Interconnects. . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6.2 Plane Wave Coupling to Large Interconnects . . . . 2.6.3 Design for Low Plane Wave Coupling . . . . . . . . . 2.7 Differential and Common-Mode Disturbances . . . . . . . . . . 2.7.1 Decreasing the Common-Mode Disturbance . . . . .

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2.8

Shield Design . . . . . . . . . . . . . . . . . . . . . . 2.8.1 Shield Design Considerations . . . . . 2.8.2 Surface Transimpedance . . . . . . . . . 2.8.3 Shielded Electrically-Small Systems 2.8.4 Shielded Electrically-Large Systems 2.9 Conclusions . . . . . . . . . . . . . . . . . . . . . . . References . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

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51 52 53 54 56 57 58 61 62 64 76 80 82 83 83 86 86 87 90 90 98 100 101 102 105 105 106 110 111 111 112 112 114 119 128 129 136

Modelling of Active Devices . . . . . . . . . . . . . . . . . . . . . . . . 3.1 The Bipolar Junction Transistor. . . . . . . . . . . . . . . . . . . 3.1.1 Deriving the Components of the Hybrid-p Model 3.1.2 Secondary Effects Affecting BJT Nonlinearity . . . 3.1.3 BJT Second-Order Nonlinear Behavior as Function of Frequency . . . . . . . . . . . . . . . . . 3.1.4 Model Limitation. . . . . . . . . . . . . . . . . . . . . . . 3.2 Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . 3.3 The Metal-Oxide-Semiconductor Field-Effect Transistor . 3.4 FET Hybrid-p Model . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.4.1 First-Order Approximations . . . . . . . . . . . . . . . 3.4.2 Secondary Effects . . . . . . . . . . . . . . . . . . . . . . 3.4.3 MOSFET Model Limitations. . . . . . . . . . . . . . . . . 3.4.4 Modelling the Secondary Effects . . . . . . . . . . . . 3.5 The Junction Field-Effect Transistor . . . . . . . . . . . . . . . 3.6 The Metal-Semiconductor Field-Effect Transistor . . . . . . 3.7 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . The Cascode and Differential Amplier Stages . . . 4.1 Cascode Stages . . . . . . . . . . . . . . . . . . . . . . . 4.2 Generic Cascode . . . . . . . . . . . . . . . . . . . . . . 4.2.1 BJTBJT Cascode. . . . . . . . . . . . . . . . . 4.2.2 FETBJT Cascode. . . . . . . . . . . . . . . . . 4.2.3 BJTFET Cascode. . . . . . . . . . . . . . . . . 4.2.4 FETFET Cascode . . . . . . . . . . . . . . . . 4.3 Traditional View on Differential Stages . . . . . . 4.4 New Differential Stage Model. . . . . . . . . . . . . 4.4.1 Design Considerations Regarding EMI . . 4.5 Simplified Differential Stage Hybrid-p Models . 4.5.1 Modified Hybrid-p Model of the BJT Differential Stage. . . . . . . . . . . . . . . . 4.5.2 Modified Hybrid-p Model of the FET Differential Stage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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4.6

Reducing Differential Pair Second-Order 4.6.1 Design Considerations . . . . . . . 4.6.2 Biasing Differential Stages . . . . 4.6.3 Transistor Matching . . . . . . . . . 4.7 Conclusions . . . . . . . . . . . . . . . . . . . . References . . . . . . . . . . . . . . . . . . . . . . . . . 5

Nonlinearity . .......... .......... .......... .......... ..........

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139 139 140 145 145 146 149 150 150 151 151 156 157 158 159 160 162 170 171 172 173 177 181 181 184 187 188 188 191 191 192 194 197

Design of EMI-Resilient Single-Stage Ampliers . . . . . . . . . . . 5.1 Error Reduction Techniques . . . . . . . . . . . . . . . . . . . . . . 5.1.1 Compensation . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1.2 Error-Feedforward . . . . . . . . . . . . . . . . . . . . . . . 5.1.3 Negative Feedback. . . . . . . . . . . . . . . . . . . . . . . 5.1.4 Introduction to Systematic Negative-Feedback Amplifier Design . . . . . . . . . . . . . . . . . . . . . . . . 5.2 Systematic Negative-Feedback Amplifier Design Strategy . 5.2.1 Amplifier Specifications . . . . . . . . . . . . . . . . . . . 5.2.2 Determining the Proper Type of Feedback . . . . . . 5.2.3 Noise Performance. . . . . . . . . . . . . . . . . . . . . . . 5.2.4 Distortion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2.5 Interference. . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2.6 Bandwidth . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2.7 Bias Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . 5.3 Envelope Detection in Single-Stage Negative-Feedback Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.3.1 Frequency Dependency of the Nonlinear Behavior of a Single-Stage Negative-Feedback Amplifier . . 5.4 Design for a Specified Envelope Detection Behavior . . . . . 5.4.1 Example: Minimal Bias Current in a Single-Stage Voltage Follower . . . . . . . . . . . . . . . . . . . . . . . . 5.4.2 Example: Minimal Bias Current in a Single-Stage Current Follower . . . . . . . . . . . . . . . . . . . . . . . . 5.5 Design Requirements for Low EMI Susceptibility in Single-Stage Amplifiers . . . . . . . . . . . . . . . . . . . . . . . 5.6 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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Design of EMI-Resilient Dual-Stage Ampliers . . . . . . . . . . . . . . 6.1 Design Considerations for Low EMI-Susceptible Dual-Stage Negative-Feedback Amplifiers . . . . . . . . . . . . . . . . . . . . . . 6.1.1 Dual-Stage Negative-Feedback Amplifier Model . . . . 6.1.2 Envelope Detection in Negative-Feedback Amplifiers Using Global- and Local Feedback . . . . . . . . . . . . . 6.1.3 Concluding Remarks About Local Feedback. . . . . . .

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Model of a Dual-Stage Negative-Feedback Amplifier Without Local Feedback. . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2.1 Envelope Detection in Negative-Feedback Amplifiers with Global Feedback Only . . . . . . . . . . . . . . . . . . 6.2.2 Second-Order Nonlinearity Factor as a Function of Frequency. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2.3 The Effect of an Additional Stage on v1 . . . . . . . . . 6.2.4 Maximal Value of v1 of a Dual-Stage Negative-Feedback Amplier . . . . . . . . . . . . . . . . . 6.3 Es;xl of a Dual-Stage Negative-Feedback Amplier . . . . . . . . 6.3.1 A. Second-Order Nonlinear Dependencies of the Input Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.3.2 B. Second-Order Nonlinear Dependencies of the Output Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.3.3 C. Active Part Implementation . . . . . . . . . . . . . . . . 6.3.4 Generally Valid Design Rules . . . . . . . . . . . . . . . . . 6.3.5 Differential Input Stage . . . . . . . . . . . . . . . . . . . . . 6.4 Technology Considerations . . . . . . . . . . . . . . . . . . . . . . . . . 6.5 Overview of the Proposed Design Method . . . . . . . . . . . . . . 6.5.1 Disturbance and Envelope Detection in a Second-Order Amplifier . . . . . . . . . . . . . . . . . . . . . 6.5.2 Proposed Design Procedure. . . . . . . . . . . . . . . . . . . 6.5.3 Overview of Negative-Feedback Amplifier Design . . 6.6 Design Example of a Voltage Amplifier. . . . . . . . . . . . . . . . 6.7 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Realizations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1 AM Detection Effects in a Single-Stage Transimpedance Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2 Design of a Transimpedance Amplifier with Specified SER . 7.2.1 Determining the Disturbing Current . . . . . . . . . . . 7.2.2 Design Approach . . . . . . . . . . . . . . . . . . . . . . . . 7.2.3 Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2.4 Calculation of the Required Transconductance . . . 7.2.5 Implementation of the BJT Transimpedance Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2.6 Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2.7 Discussion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.3 Multiple-Stage Transadmittance Amplifier . . . . . . . . . . . . 7.3.1 System Design . . . . . . . . . . . . . . . . . . . . . . . . . 7.3.2 Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . 7.3.3 Measurements of 3T MRI Induced Interference. . . . 7.3.4 Magnitude of the Required Transfers . . . . . . . . . .

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198 199 200 201 202 208 208 211 213 215 216 219 220 221 223 225 228 231 232 233 233 238 239 240 241 241 244 248 248 249 250 251 253 258

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7.3.5 Design of the Feedback Network. . . . . . . . . . . 7.3.6 Noise Calculation and Input Stage Bias Current 7.3.7 Output Stage . . . . . . . . . . . . . . . . . . . . . . . . . 7.3.8 Linear Transfers . . . . . . . . . . . . . . . . . . . . . . 7.3.9 EMI Behavior of the Transadmittance Amplifier . 7.3.10 Measurements . . . . . . . . . . . . . . . . . . . . . . . . 7.3.11 Resolving In-Band Interference Problems . . . . . 7.4 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Conclusions and Recommendations . 8.1 Conclusions . . . . . . . . . . . . . . 8.2 Recommendations . . . . . . . . . . Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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258 259 260 260 263 263 266 267 267 269 269 272 272 273 279 283

Appendix A: Shielding . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Appendix B: Single-Stage Nullor Implementation . . . . . . . . . . . . . . . . Appendix C: Derivation of Differential Stage Equations . . . . . . . . . . . Appendix D: Differential Input and Output Stage Negative-Feedback Amplifier . . . . . . . . . . . . . . . . . . . . . Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

295 301

Abbreviations and Symbols

Abbreviations
AC AM ASK BJT (W)CDMA DSB (DS)CDMA CLM DC DECT EMC EMI FDD (O)FDM FDMA FET FM (G)FSK GSM IEC JFET (W)LAN MESFET MOSFET (G)MSK PCB PM PSK SER Alternating Current Amplitude Modulation Amplitude Shift Keying Bipolar Junction Transistor (Wideband) Code Division Multiple Access Double Side Band modulation (Direct Sequence) Code Division Multiple Access Channel Length Modulation Direct Current Digital Enhanced Cordless Telecommunications Electromagnetic Compatibility Electromagnetic Interference Frequency Division Duplex (Orthogonal) Frequency Division Multiplexing Frequency Division Multiple Access Field Effect Transistor Frequency Modulation (Gaussian) Frequency Shift Keying Global System for Mobile Communications International Electrotechnical Committee Junction Field-Effect Transistor (Wireless) Local Area Network Metal-Semiconductor Field-Effect Transistor Metal-Oxide-Semiconductor Field-Effect Transistor Gaussian Minimum Shift Keying Printed Circuit Board Phase Modulation Phase Shift Keying Signal-to-Error Ratio

xi

xii

Abbreviations and Symbols

SNR SSB TIA TDD TDM TDMA QAM UMTS UWB VSB

Signal-to-Noise Ratio Single Side Band Modulation Transimpedance Amplier Time Division Duplex Time Division Multiplexing Time Division Multiple Access Quadrature Amplitude Modulation Universal Mobile Telecommunications System Ultra Wide Band Vestigial Side Band modulation

Symbols
I, i U, u P, p Current [A] Voltage [V] Power [W]

Electromagnetic Field Coupling

a b d c k r q e0 er l0 lr c E H k0 Zw Z0 m S Attenuation constant of transmission line [Np/m] Phase constant of transmission line [radians/m] Skin depth [m] p Propagation constant of transmission line ZY a jb [] Wavelength [m] Conductance [S] Resistance [X] Permittivity of free space: 8.85 9 10-12 [C2/N m2] Relative permittivity of a medium [] Permeability of free space: 4p 9 10-7 [Tm/A] Relative permeability of a medium [] Speed of Light [m/s] Electric Field [V/m] Magnetic Field [A/m] Wave number [1/m] q 0 Wave impedance: l e0 =120 9 p [X] q RjxL Characteristic impedance of transmission line G jxC [X]
1 Phase velocity: p l l e0 er [m/s]
0 r

Shielding Factor []

Abbreviations and Symbols

xiii

Negative-Feedback Amplier Design and Active Devices

a a20 b bFET bf bdc bac en k v vmax xc xk xl xmax x0 xT f c j n m q At A1 A2 Current gain of an active stage [] Low-frequency current gain of the second stage (output stage) [] Feedback factor [] or [X] FET transconductance factor [A/V2] Forward Current Amplication Factor [] Direct current current gain of the BJT [] Small signal current gain of the BJT [] Normalized truncation error Channel length modulation factor (rst-order characterization) [] Transfer from source to input of active device [] or [X] Maximal value of v [] or [X] (Angular) Carrier frequency [rad/s] (Angular) Frequency at which input stage determines D2 xc [rad/s] (Angular) Frequency of the envelope variation [rad/s] Angular frequency at which vmax occurs [rad/s] Amplier bandwidth [rad/s] (Angular) Transit frequency [rad/s] Damping factor [] Transfer of the second order current from the voltage controlled current source at the input of a BJT to the base-emitter voltage [X] Feedback factor in the differential stage [] or [X] Transfer from signal source to the input of a controlled (current) source [] or [X] Loading factor of amplier output [] or [X] Direct signal transfer from source to load [], [X], [S] Asymptotic Gain [], [X], [S] Linear gain (e.g., transconductance) of the rst amplier stage and the rst transistor (Q1 ; M1 ) of the differential stage, respectively Linear gain (e.g., transconductance) of the second amplier stage and the second transistor (Q2 ; M2 ) of the differential stage, respectively Second-order nonlinearity of the rst amplier stage and the rst transistor (Q1 ; M1 ) of the differential stage, respectively [A/V2] Second-order nonlinearity of the second amplier stage and the second transistor (Q2 ; M2 ) of the differential stage, respectively [A/ V 2] Low-frequency second-order nonlinearity factor giving the detection current in the rst transistor (Q1 ; M1 ) of the differential stage [A/V2]

a12 a22 a021 0

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Abbreviations and Symbols

a022 0 a02 0 b12 ; b22 Cje Cde Cjc Cjs Cbs Cbx Cl Cp Cpt Cgsov Cgdov Cbd Cgs Cgst Cox Cgd CM s, CM 0 D2 Ein El Es Es;xl G DL Gvsat Gmob g p2 gds1 gds2 gm 1 gmt gm 2 g0m2

Low-frequency second-order nonlinearity factor giving the detection current in the second transistor (Q2 ; M2 ) of the differential stage [A/V2] Low-frequency second-order nonlinearity factor giving the total detection current in the differential stage [A/V2] Second-order nonlinearity factor of the input of the BJTs in differential stages and in dual-stage ampliers [A/V2] Junction capacitance between base and emitter [F] Depletion capacitance between base and emitter [F] Junction capacitance between base and collector [F] Junction capacitance between collector and substrate (npn) [F] Junction capacitance between base and substrate (lateral pnp) [F] Small-signal capacitance between collector and base terminal [F] Small-signal capacitance between collector and rB [F] Small-signal capacitance between base and emitter [F] Small-signal input capacitance of the BJT differential stage [F] Overlap capacitance between gate and source [F] Overlap capacitance between gate and drain [F] Depletion capacitance between bulk and drain [F] Gate-source capacitance [F] Small-signal input capacitance of the FET differential stage [F] Gate oxide capacitance per unit area [F] Gate-drain capacitance [F] The common-mode signal at the input of the differential stage [V] Second-order nonlinearity term of a negative-feedback amplier [1/ V] Signal at the input of an active part [V] or [A] Load signal [V] or [A] Source signal [V] or [A] Equivalent signal source that represents the envelope detection effect [V] or [A] Channel length modulation factor (higher order characterization) [] Velocity saturation factor [] Mobility reduction factor [] Second-order nonlinear input conductance of the BJT [A/V2] Linear output conductance of the FET [S] Second-order nonlinear output conductance of the FET [S] Linear transconductance [A/V] Linear transconductance of the differential stage [A/V] Second-order nonlinear transconductance [A/V2] Total second-order nonlinear transconductance with linearizing effect of base resistances taken into account [A/V2]

Abbreviations and Symbols

xv

gx in;eq k L LP product m q pi po pl rp r pt rB rdst ro roCa rot T un;eq UbeQmin UbeQmax Uds;max Udssat Ugs;max Up Ut W

Cross conductance (dic =dube dUce and did =dugs dUds of the BJT and FET [A/V2] Equivalent current noise source at the input of an amplier [A] Boltzmanns constant: 1.38 9 10-23 [J/K] Channel length (FET) [m] Loop gain poles product [rad/s]1 or 2 Modulation index [] Electron charge: 1.60 9 10-19 [C] Pole determined by the capacitance of the input stage and the resistances connected to it [rad/s] Pole determined by the (transit) frequency of the output stage [rad/s] Pole determined by the load capacitance and the resistances connected to it [rad/s] Small-signal input resistance of the BJT [X] Small-signal input resistance of the BJT differential stage [X] Semiconductor material resistance of the base [X] Small-signal output resistance of the FET differential stage [X] Small-signal output resistance of the BJT [X] Output resistance of the cascode stage [X] Small-signal output resistance of the BJT differential stage [X] Absolute temperature [K] Equivalent voltage noise source at the input of an amplier [V] Base-emitter voltage corresponding to the lower boundary of the mid-current region [V] Base-emitter voltage corresponding to the upper boundary of the mid-current region [V] Maximal drain-source voltage for which the simplied FET equations can be used [V] Saturation voltage of the FET [V] Maximal gate-source voltage for which the simplied FET equations can be used [V] JFET pinch-off voltage [V] Threshold voltage of the FET [V] Channel width (FET) [m]