PD

F -X C h a n ge

PD

F -X C h a n ge

O W !

bu

to

om

to
ww

bu

O W !

.c

tr

ac

k e r- s o ft w a

re

tr

ac

k e r- s o ft w a

re

Typical Frequency Response

Lower Corner

Upper Corner

CH 10 11 Frequency Differential Response Amplifiers

136

.c

ww
w

om

lic

lic
.

PD

F -X C h a n ge

PD

F -X C h a n ge

O W !

bu

to

om

to
ww

bu

O W !

.c

tr

ac

k e r- s o ft w a

re

tr

ac

k e r- s o ft w a

re

High-Frequency Bipolar Model

Cb C je

At high frequency, capacitive effects come into play. Cb represents the base charge, whereas C and Cje are the junction capacitances.
CH 10 11 Frequency Differential Response Amplifiers 137

.c

ww
w

om

lic

lic
.

PD

F -X C h a n ge

PD

F -X C h a n ge

O W !

bu

to

om

to
ww

bu

O W !

.c

tr

ac

k e r- s o ft w a

re

High-Frequency Model of Integrated Bipolar Transistor

tr

ac

k e r- s o ft w a

re

Since an integrated bipolar circuit is fabricated on top of a substrate, another junction capacitance exists between the collector and substrate, namely CCS. CH 10 11 Frequency Differential Response Amplifiers 138

.c

ww
w

om

lic

lic
.

PD

F -X C h a n ge

PD

F -X C h a n ge

O W !

bu

to

om

to
ww

bu

O W !

.c

tr

ac

k e r- s o ft w a

re

tr

ac

k e r- s o ft w a

re

Example: Capacitance Identification

CH 10 11 Frequency Differential Response Amplifiers

139

.c

ww
w

om

lic

lic
.

PD

F -X C h a n ge

PD

F -X C h a n ge

O W !

bu

to

om

to
ww

bu

O W !

.c

tr

ac

k e r- s o ft w a

re

tr

ac

k e r- s o ft w a

re

MOS Intrinsic Capacitances

For a MOS, there exist oxide capacitance from gate to channel, junction capacitances from source/drain to substrate, and overlap capacitance from gate to source/drain.
CH 11 Frequency Response

140

.c

ww
w

om

lic

lic
.

PD

F -X C h a n ge

PD

F -X C h a n ge

O W !

bu

to

om

to
ww

bu

O W !

.c

tr

ac

k e r- s o ft w a

re

tr

ac

k e r- s o ft w a

re

Gate Oxide Capacitance Partition and Full Model

The gate oxide capacitance is often partitioned between source and drain. In saturation, C2 ~ Cgate, and C1 ~ 0. They are in parallel with the overlap capacitance to form CGS and CGD.
141 CH 11 Frequency Response

.c

ww
w

om

lic

lic
.

PD

F -X C h a n ge

PD

F -X C h a n ge

O W !

bu

to

om

to
ww

bu

O W !

.c

tr

ac

k e r- s o ft w a

re

tr

ac

k e r- s o ft w a

re

Example: Capacitance Identification

CH 10 11 Frequency Differential Response Amplifiers

142

.c

ww
w

om

lic

lic
.

PD

F -X C h a n ge

PD

F -X C h a n ge

O W !

bu

to

om

to
ww

bu

O W !

.c

tr

ac

k e r- s o ft w a

re

tr

ac

k e r- s o ft w a

re

Transit Frequency

2 fT

gm CGS

2 fT

gm C

Transit frequency, fT, is defined as the frequency where the current gain from input to output drops to 1.
CH 10 11 Frequency Differential Response Amplifiers 143

.c

ww
w

om

lic

lic
.