EE 42/43/100 Introduction to Digital Electronics

Lecture 18 8/5/13 Instructors: Prof. Connie Chang-Hasnain Dr. Wenbin Hsu

Lecture 18
Review MOSFET Transistors and Regions of Operation Bias Circuits Small Signal Equivalent Circuit of MOSFET Small Signal Analysis
Common-Source Amplifier Source Follower Common-Gate Amplifier

CMOS Transistors and Circuit Symbols

or

or

NMOS

PMOS

I-V and Regions of Operation

iD

v= vGS Vt 0 DS
Triode region Saturation region

Cutoff

vDS

Regions of Operation in NMOS

Cutoff Region vGS Vto iD = 0 Triode Region vGS Vto and vDS vGS Vto iD = K [2( vGS Vto )vDS vDS 2 ] Saturation Region vGS Vto and vDS vGS Vto = iD K ( vGS Vto ) 2
K =( W KP ) L 2

Example: Finding iD
Vt 0 0.5V, KP 100 A/V 2 = = 5 100 W KP ) K ( )( = = .18 2 L 2 A/V 2 1.389mA/V 2 = 1389 = The transistor is in saturation.
= iD K ( vGS Vt 0 ) 2 = K (VDD iD RD iD RS Vt 0 ) 2

Let iD in mA and RD , RS in k
= iD 1.389(1.8 iD 0.2iD 0.5) 2

0.556mA iD =
vGS = 1.133V

Quiz 1
VDD=6V 20k Vin Vt0=1V KP=100A/V2 W/L=10 Z Vin 10k Vout Vout P W

X Y The circuit shown on the left has voltage transfer characteristic shown on the right. The transistor M has KP, W /L, and Vto as shown. The label W equals (A) 5V (B) 4V Answer: B (C) 3V (D) 2V (E) None of these

Quiz 2
VDD=6V 20k Vin Vt0=1V KP=100A/V2 W/L=10 Z Vin 10k Vout Vout P W

X Y The circuit shown on the left has voltage transfer characteristic shown on the right. The transistor M has KP, W /L, and Vto as shown. The label X equals (A) 0.5V (B) 1V Answer: B (C) 1.5V (D) 2V (E) 2.5V

Quiz 3
VDD=6V 20k Vin Vt0=1V KP=100A/V2 W/L=10 Z X Y Vin 10k Vout Vout P W

The circuit shown on the left has voltage transfer characteristic shown on the right. The transistor M has KP, W /L, and Vto as shown. The label P is in Answer: D
6V A B 5.5V 5V C D 4.5V 4V E 3.5V

Quiz 3
VDD=6V 20k Vin Vt0=1V KP=100A/V2 W/L=10 Z X Y Vin 10k Vout Vout P W
P = VDD 20 10 + Vin 10 + 20 10 + 20 2 1 = 6 + 1 = 4.33V 3 3

The circuit shown on the left has voltage transfer characteristic shown on the right. The transistor M has KP, W /L, and Vto as shown. The label P is in
6V A B 5.5V 5V C D 4.5V 4V E 3.5V

Quiz 4
VDD=6V 20k Vin Vt0=1V KP=100A/V2 W/L=10 Z X Y Vin 10k Vout Vout P W

If the transistor M changes its region of operation at Vin =Y, between Vin =X and Vin =Y, the transistor M is in (A) cutoff region (B) triode region Answer: C (C) saturation region

Quiz 5
VDD=6V 20k Vin Vt0=1V KP=100A/V2 W/L=10 Z X Y Vin 10k Vout Vout P W

If the transistor M changes its region of operation at Vin =Y, what is the value of Y-Z? (A) 1V (B) 2V (C) -1V Answer: A (D) -2V (E) 0V

Quiz 5
VDD=6V 20k Vin Vt0=1V KP=100A/V2 W/L=10 Z X Y Vin 10k Vout Vout P W

Y = VGS Z = VDS and VDS = VGS Vt 0 Y Z = Vt 0 = 1V 100 W KP ( )( )= 10 500 A/V 2 = 0.5mA/V 2 K= = L 2 2 6Z YZ I D (mA) = KZ2 = + 20 KZ2 =10Z2 =12 2Z + 1 10 20 = Z 1V and = Y 2V

An NMOS Inverter
VDD=6V 10k Vout Vin Vt0=1V KP=100A/V2 W/L=10

MOSFET Circuit Analysis

Graphical methods only good for simple circuits Mathematical circuit analysis desired for practical amplifier circuits Two steps to analyze amplifier circuits:
Analyze dc circuit to determine the Q point. Use a small-signal equivalent circuit to determine the input resistance, voltage gain, and so on.

Simple NMOS Amplifier Circuit

VDD = RD iD (t ) + vDS (t )

Load-Line Analysis

VDD = RD iD (t ) + vDS (t )

vin and vDS versus time

Q Point and Bias Circuit

Establish a Q point near the middle of the load line to get maximum output swing without clipping.

Bias Circuit
KP = 50 A/V 2 , Vto = 1V, L= 2 m, and W = 80 m W KP = ) 1 mA/V 2 K (= L 2 VDD = 10V
Vout

Design = goal: Vout 6V and iD 5mA = = RD VDD Vout 10 6 = = 0.8k 5 iD

2

iD = K (VGS Vto ) VGS

5 iD = = = 1+ 3.2V Vto + K 1

Bias Circuit (continued)

It is desireable to use only one power supply. Use R1 = 680k and R2 = 320k VGS R2 VDD = = 3.2V R1 + R2

(Fixed- plus Self-Bias Circuit)

Bias Circuit (continued)

Problem: Huge difference in drain current when biased at the same gate voltage if there is variation in device parameter. Transistor in saturation region: = iD K ( vGS Vto ) 2

Bias Circuit (continued)

VG RS

VG = vGS + iD RS

Solution: Add a source resistance to provide negative feedback to stabilize drain current.

Bias Circuit (continued)

Design = goal: Vout 6V and iD 5mA = = RD
Vout

VDD Vout 10 6 = = 0.8k 5 iD

iD = K ( vGS Vto ) 2 vGS = Vto +

iD 5 1+ 3.2V = = K 1 Use R 0.2k V 4.2V and v= 5V = = S G DS

R1 580k and= R2 420k = VG 4.2V Choose= Verify vDS = 5V > vGS Vto = 2.2V Indeed in saturation region Note: Application may impose constraints on
RD and RS

Small-Signal Around Q-Point

iD ( t ) = I DQ + id (t )
total current dc Q point

vGS (t ) = VGSQ + v gs (t )

the signal (or AC small signal)

Small-Signal Equivalent Circuit

iD (t ) =I DQ + id (t ) =K [VGSQ + v gs (t ) Vt 0 ]2 ) K (VGSQ Vt 0 ) 2 + 2 K (VGSQ Vt 0 )v gs (t ) + Kv gs 2 (t ) I DQ + id (t = I DQ gm: transconductance gm id (t ) = g m v gs (t ) ig ( t ) = 0 g m = 2 K (VGSQ Vt 0 ) = 2 K I DQ = 2 KP W / L I DQ g m as W / L or I DQ neglect

Drain Resistance

The drain characteristics of real devices slope slightly upward with increasing vDS

Effective channel length reduction

Small-Signal Equivalent Circuit

vds = id g m v gs + rd rd = drain resistance id gm = v gs iD vGS

=
vds =0

= 2 K (VGSQ Vt 0 ) = 2 K I DQ
Q point

iD 1 id = = = 0 rd vds v =0 vDS Q point

gs

Ideal

Finding gm and rd
gm = iD vGS

VDSQ =10V

(10.7 4.7)mA = 1 mS (4 3)V

i 1 D rd vDS =

VGSQ = 3.5V

(8.0 6.7)mA = 1.3x104 (14 4)V rd 7.7k =

MOSFET Small Signal Circuit Analysis

DC analysis to find Q point
Use load line technique or large signal equations. All capacitors are open circuit. From Q-point, get gm and rd for small signal equivalent circuit.

AC small signal analysis

Replace MOSFET with small signal equivalent circuit. DC source is AC ground (because there is no AC signal variation). All capacitors are short circuit (unless otherwise specified). Write circuit equations and derive expressions for gains, input impedance, and output impedance.

Common-Source Amplifier

Find Q Point
Open Circuit Open Circuit

VG = VDD

R2 R1 + R2

VGS = VG I D RS ID = K (VGS Vt 0 ) 2

VDD = I D ( RD + RS ) + VDS

Small Signal Equivalent Circuit

Short Circuit

Small Signal Analysis

Voltage Gain RL ' = 1 1 / rd + 1 / RD + 1 / RL

Input Resistance = R in vin = R = R1 R2 G iin

Output Resistance vo = v gs g m v gs RL ' vin = 1 vo ' Ro = Av = = g m RL 1 / RD + 1 / rd v

in

Example: Common-Source Amplifier

KP =50 A/V 2 , Vto =2V, L=10 m, and W =400 m v (t ) = 100sin(2000 t ) mV

Find Q Point
KP =50 A/V 2 , Vto =2V, L=10 m, and W =400 m W KP ) 1 mA/V 2 K (= = L 2 VG VDD = 1 R2 = 20 = 5V 3+1 R1 + R2

VG = VGSQ + RS I DQ and I DQ = K (VGSQ Vt 0 ) 2 VG = VGSQ + RS K (VGSQ Vt 0 ) 2 5 = VGSQ + 2.7(VGSQ 2) 2 VGSQ = 2.885V 1 (2.885 2) 2 = 0.783mA I DQ = K (VGSQ Vt 0 ) 2 =

Small Signal Analysis

Voltage Gain RL ' = 1 = 3197 1 / rd + 1 / RD + 1 / RL

vo g m RL ' = 1.77 3.197 = 5.66 Av == vin Input Resistance vin = = R = = R R1 R 750k 2 in G iin Small Signal Model g m = 2 KP W / L I DQ = 2 50x10 400 / 10 .783x10 = 1.77 mS rd =
6 3

Output Resistance 1 = Ro = 4.7k 1 / RD + 1 / rd Rin vin v= = (t ) 88.23sin(2000 t ) mV R + Rin vo (t ) = Av vin = 500 sin(2000 t ) mV

Source Follower

Small Signal Analysis

Voltage Gain 1 = RL 1 rd + 1 RS + 1 RL g m ( vin vo ) RL vo g m v = = gs RL vo g m RL A = = <1 v vin 1 + g m RL

Input Resistance vin R = = R = R1 R2 in G iin

Output Resistance

Deactivate independent sources and use external-source method. 1 1 = (ix + g m v gs ) (i x g m v x ) vx = 1 / rd + 1 / RS 1 / rd + 1 / RS v x (1 / rd + 1 / RS ) = ix g m v x v x ( g m + 1 / rd + 1 / RS ) = ix = R o 1 vx = ix g m + 1 / rd + 1 / RS

Example: Source Follower

W KP 160 50 K = ( )( )= = 2 mA/V 2 L 2 2 2 I DQ K (VGSQ Vt 0 ) 2 = = 10 mA 2(VGSQ 1) 2 VGSQ = 3.236 V

VG = VDD

2 R2 = 15 = 7.5 V 2+2 R1 + R2

= VG VGSQ + I DQ RS RS = VG VGSQ 7.5 3.236 = = 426.4 10 mA I DQ

Small Signal Analysis

Small Signal Model g m = 2 KP W / L I DQ = 8.944 mS rd = Voltage Gain = RL 1 = 298.9 1 rd + 1 RS + 1 RL vo g m RL = = = .7278 A v vin 1 + g m RL vin = R = = 1 M R1 R 2 G iin Output Resistance 1 Ro = = 88.58 g m + 1 / rd + 1 / RS Current Gain io vo / RL Rin A A = = = = 727.8 i v iin vin / Rin RL Power Gain G = Ai Av = 529.7

Input Resistance = R in

Common-Gate Amplifier

Small Signal Analysis

Voltage Gain = RD RL RL = vo = g m vin RL g m v gs RL vo A = = g m RL v vin

Input Resistance (iin + g m v gs ) RS = (iin g m vin ) RS vin = ( g m + 1 / RS )vin = iin 1 vin R = = in iin g m + 1 / RS Output Resistance Ro = RD