I

Question Paper Code:

71877
2013.

l'LE. DE:GREE EXA.~fINATIO:N, JUNE/JULY Elective VLSIDesign

VL 9256/VL 956110244 VLE 32 - VLSI TECHNOLOGY (Regulation Time : Three hours Answer ALL questions. PART A - (10 x 2 2009/2010) Maximum: 100 marks

= 20 marks)

2. 3. 4. 5. 6. 7. 8. 9. 10.

Write the problem associated with oxide stress in the oxidation process. Write the necessity of oxidation of silicon. What do you mean by projection printing? List the advantages of low pressure deposition process. Write the importance of Arrhenius equation. List the fundamental consideration factors for an Ie processing.

Writethe significance of threshold adjusting in lYI08 fabrication.

DefiDe eutectic die bonding.

List three
COIIUQOIl

interoonnection

of chip to bond pads.

PART B - (5 x 16 = 80 marks) 11~ (a)

f
(ii)

List the various .. aiD them.

defects

associated with crystal

structure

and
(8)

J)j8CU88 wby crystal growing is needed and explain the theory behind it. (8)

Or ~lain the crystal growing approach by Czochralski process.

(16)