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EPRI Family of Multi-Functional Low Cost Solid State Switchgear: Requirements Definition Phase

1010666

Effective December 6, 2006, this report has been made publicly available in accordance with Section 734.3(b)(3) and published in accordance with Section 734.7 of the U.S. Export Administration Regulations. As a result of this publication, this report is subject to only copyright protection and does not require any license agreement from EPRI. This notice supersedes the export control restrictions and any proprietary licensed material notices embedded in the document prior to publication.

EPRI Family of Multi-Functional Low Cost Solid State Switchgear: Requirements Definition Phase
1010666

Technical Update, December 2005

EPRI Project Manager F. Goodman

ELECTRIC POWER RESEARCH INSTITUTE 3420 Hillview Avenue, Palo Alto, California 94304-1395 PO Box 10412, Palo Alto, California 94303-0813 USA 800.313.3774 650.855.2121 askepri@epri.com www.epri.com

DISCLAIMER OF WARRANTIES AND LIMITATION OF LIABILITIES


ITHIS DOCUMENT WAS PREPARED BY THE ORGANIZATION(S) NAMED BELOW AS AN ACCOUNT OF WORK SPONSORED OR COSPONSORED BY THE ELECTRIC POWER RESEARCH INSTITUTE, INC. (EPRI). NEITHER EPRI, ANY MEMBER OF EPRI, ANY COSPONSOR, THE ORGANIZATION(S) BELOW, NOR ANY PERSON ACTING ON BEHALF OF ANY OF THEM: (A) MAKES ANY WARRANTY OR REPRESENTATION WHATSOEVER, EXPRESS OR IMPLIED, (I) WITH RESPECT TO THE USE OF ANY INFORMATION, APPARATUS, METHOD, PROCESS, OR SIMILAR ITEM DISCLOSED IN THIS DOCUMENT, INCLUDING MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE, OR (II) THAT SUCH USE DOES NOT INFRINGE ON OR INTERFERE WITH PRIVATELY OWNED RIGHTS, INCLUDING ANY PARTY'S INTELLECTUAL PROPERTY, OR (III) THAT THIS DOCUMENT IS SUITABLE TO ANY PARTICULAR USER'S CIRCUMSTANCE; OR (B) ASSUMES RESPONSIBILITY FOR ANY DAMAGES OR OTHER LIABILITY WHATSOEVER (INCLUDING ANY CONSEQUENTIAL DAMAGES, EVEN IF EPRI OR ANY EPRI REPRESENTATIVE HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES) RESULTING FROM YOUR SELECTION OR USE OF THIS DOCUMENT OR ANY INFORMATION, APPARATUS, METHOD, PROCESS, OR SIMILAR ITEM DISCLOSED IN THIS DOCUMENT. ORGANIZATION(S) THAT PREPARED THIS DOCUMENT EPRI Solutions

NOTE
For further information about EPRI, call the EPRI Customer Assistance Center at 800.313.3774 or e-mail askepri@epri.com. Electric Power Research Institute and EPRI are registered service marks of the Electric Power Research Institute, Inc. Copyright 2005 Electric Power Research Institute, Inc. All rights reserved.

CITATIONS
This report was prepared by EPRI PEAC Corporation 942 Corridor Park Blvd. Knoxville, TN 37932 Principal Investigators A. Maitra T. Short M. McGranaghan Enertronics, Inc 2204 Hardwick Street Blacksburg, VA 24060 Principal Investigator J. Lai This document describes research sponsored by the Electric Power Research Institute (EPRI). The publication is a corporate document that should be cited in the literature in the following manner: EPRI Family of Multi-Functional Low Cost Solid State Switchgear: Requirements Definition Phase, EPRI, Palo Alto, CA: 2005. 1010666

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REPORT SUMMARY

This report describes the findings of the research performed to assess the requirements for a next generation solid-state breakers ("all solid-state" as well as "hybrid" designs), identify the application areas, and evaluate the economic and technical considerations for different technologies and design options for a family of low-cost solid-state switchgears. The report outlines a research roadmap for design and development of the proposed technology and identifies the key functionalities and criteria that need to be met in order for this technology to gain market acceptance. Background There are growing instances in utility distribution and transmission systems wherein the fault current levels are exceeding the interrupting capability of existing substation circuit breakers. This increase in fault current level either requires the replacement of large number of substation breakers or the development of some means to limit the fault current. Also, many mechanical circuit breakers are operating much more than originally intended in applications such as capacitor switching. This continual use of mechanical breakers requires intensive maintenance to be performed or periodic replacement of the whole breaker. Environmental problems are also on the horizon with the use of both SF6 gas and oil within mechanical breakers, which may pose long term problems for many utilities. The research behind this report was performed to assess the requirements for a next generation medium and high voltage solid-state switchgears, identify the application areas, and evaluate the economic and technical considerations for different technologies and design options. This preliminary research is the first step before embarking on development of the hardware and associated controls for development of a family of low-cost solid-state switchgear for a range of distribution applications a prototype version of solid-state switchgear. Objectives This phase of the project involves more detailed definition of requirements and evaluation of the technology benefits for economic assessments. The requirements will form the basis for device specifications that can be used to develop partnership arrangements with manufacturers for development and commercialization of the technologies. This feasibility assessment will lead to the development of a family of low-cost solid-state switchgear for a range of distribution and transmission applications. Approach The overall objective of this multi-year project is to develop and commercialize a family of lowcost, multifunctional, solid-state switchgear for distribution and transmission applications. The objectives of the requirements definition phase delineated in this work statement are: Develop a detailed definition of the requirements for product development v

Appraisal of current switchgear technology and review the current state of the art in conventional and solid-state switchgear to identify the technology gaps that must be filled to meet the product familys needs Identify the functions that the switchgear is to provide, such as 1) current interruption, 2) current limiting, 3) fast fault clearing and detection, 4) distribution system condition monitoring, and 5) remote communication linkage with automated distribution operating systems Develop the cost/benefit perform feasibility analysis and the evaluate the projected costs for the proposed approach Provide a EPRI long term technology roadmap for the development and commercialization cycle for the next-generation solid-state switchgear family

Results A new hybrid switchgear design is presented in this report which is an innovative, scalable and offers a multi-functional approach to next generation medium and high voltage solid-state switchgears. The topology proposed here is the first design that has the potential of achieving all of the goals for a solid state circuit breaker such as rapid fault clearing, instantaneous fault isolation, fast current limiting for downstream coordination, soft switching capabilities, rapid load transfer, voltage and current monitoring, and a sale price of 5 to 7 times that of conventional breakers and reclosers. This conceptual design appears to be a suitable candidate to the development of a family of low-cost solid-state switchgear which can expand the capabilities of existing switchgears to a modular integrated electrical interface and create new service opportunities to meet the customers' requirement and is therefore a viable market opportunity. The proposed approach is based on innovative, multi-functional, modular, and hybrid design of power electronics based switchgear. The intent here is not to make recommendations for a specific design or a specific semiconductor device. The question is, Is there a possibility that other designs may evolve that might meet the need? This decision will have to be made by the manufactures to come up with other innovative designs that will meet the specification or through a competitive procurement process to select a vendor/developer/partner. These designs will guide the development of the smart solid-state switchgear. EPRI Perspective ADA represents the confluence point for power distribution industry change and challenges. Examples of the forces being brought to bear on distribution utilities are: upgrades to aging systems, availability of improved distribution system technology, optimized reliability, customer outage intolerance, deregulation, need for improved customer service options, and management of distributed generation. The brunt of these forces has not yet fully come to bear on the industry, leaving operations on the brink of fundamental change. The EPRI ADA Program envisions future distribution systems as highly automated, with a flexible electrical system architecture operated via communication networks conforming to open industry standards. As distribution systems adopt ADA, they will have improvements in energy throughput efficiency, reliability, and customer service options. This project on solid-state switchgear for distribution systems addresses a key development need in realizing the ADA vision. Keywords Advanced Distribution Automation Circuit Breakers Static Transfer Switches vi Current Limiters Power electronics

ACKNOWLEDGEMENTS
The authors wish to acknowledge the contributions received from the various engineers that provided materials, reviewed drafts, and answered questions as part of developing this document. These include, but are not limited to, the following: Greg Reed Mitsubishi Chris Larsen ABB Brad Roberts S&C Harshad Mehta Silicon Power Vic Temple Silicon Power

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CONTENTS

1 INTRODUCTION....................................................................................................................1-1 Power System Functions that Drive the Requirements for Solid-State Switchgear ..........................1-2 Report Intent ...........................................................................................................................1-9 Report Organization ...............................................................................................................1-12 2 STATUS AND NEEDS ASSESSMENT OF DISTRIBUTION SWITCHGEAR .........................2-1 Existing Switchgear .................................................................................................................2-1 Circuit Breakers ..................................................................................................................2-2 Reclosers............................................................................................................................2-6 Expulsion Fuses ..................................................................................................................2-7 Current-Limiting Fuses ........................................................................................................2-7 Mitigation of Voltage Sags and Interruptions ..............................................................................2-8 Power System Design ..........................................................................................................2-9 Key Advantages of Solid-State ("All Solid-State" as well as "Hybrid" Designs) Switchgear..........2-10 Fault-Current Limiting ...........................................................................................................2-10 Advanced and Future Switchgear Needs ..................................................................................2-12 Control, Monitoring, and Communication ................................................................................2-12 Distribution Substation Control System Development ..........................................................2-13 Intelligent Substation and Feeder Monitoring .......................................................................2-13 Intelligent Distribution Communications .............................................................................2-13 Roles for Advanced Switchgear ..............................................................................................2-14 Relay Requirements for Solid State Switchgear in Current Limiting Application .........................2-15 Relaying of the Solid-State Switch ......................................................................................2-15 3 TECHNOLOGY ASSESSMENT OF STATIC TRANSFER SWITCHES .................................3-1 Application of Custom Power Devices .......................................................................................3-1 Source Transfer Switch ............................................................................................................3-5 Device Overview ................................................................................................................3-5

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Automatic Transfer Switch (ATS) ........................................................................................3-6 Static Source Transfer Switch (Static STS) ............................................................................3-6 Thyristor (SCR) .............................................................................................................3-7 Gate-Turnoff (GTO) Thyristor .........................................................................................3-7 Super-GTO ....................................................................................................................3-8 High-Speed Mechanical Source Transfer Switch (HSMSTS)...................................................3-8 Hybrid Source Transfer Switch.............................................................................................3-9 Power System Requirements ..............................................................................................3-12 Independent Feeders .....................................................................................................3-12 Feeder Capacity for Load ..............................................................................................3-12 Synchronization ...........................................................................................................3-13 Source Availability .......................................................................................................3-13 Static STS Operation .........................................................................................................3-13 Break-Before-Make or Make-Before-Break Transfers ......................................................3-14 Transferring the Load ...................................................................................................3-14 Single-Phase Transfer ..............................................................................................3-14 Three-Phase Transfer ...............................................................................................3-16 Transfer Time ..............................................................................................................3-17 Reducing the Transfer Time......................................................................................3-17 Functionality ...........................................................................................................3-17 Source Side Outage ......................................................................................................3-18 Single-Line-to-Ground Fault on Source ..........................................................................3-18 Balanced Three-Phase Fault on Source ...........................................................................3-18 Load-Side Fault............................................................................................................3-18 Out-of-Phase Transfers .................................................................................................3-18 Static STS Circuit Topologies ............................................................................................3-18 Detailed Specification and Device Review [32-35] ...............................................................3-22 Cyberex Static STS.......................................................................................................3-23 InverPower Static STS ..................................................................................................3-24 Mitsubishi Solid-State Transfer Switch ...........................................................................3-25 Silicon Power Corporation (SPCO) Static STS ................................................................3-27 S&C PureWave Static STS ............................................................................................3-29 4 TECHNOLOGY ASSESSMENT OF FAULT CURRENT LIMITERS .....................................4-1 Fault Current Limit Characteristics ............................................................................................4-2

"All Solid-State" Based Designs ................................................................................................4-3 Hybrid Designs........................................................................................................................4-8 5 DEVICE CHARACTERISTICS FOR SOLID-STATE SWITCHGEAR ...................................5-1 Solid-State Designs Using HV Power Electronic Switches and Diodes A Key for Success ...........5-2 Switching Elements for Solid-State Switchgear ..........................................................................5-4 Thyristors (Silicon-Controlled Rectifier) ...............................................................................5-5 GTO and IGCT ...................................................................................................................5-7 Emitter Turn-off-Thyristor ...................................................................................................5-9 Super GTO .......................................................................................................................5-11 HV-IGBT .........................................................................................................................5-12 Wide Band-gap Silicon Carbide Devices .............................................................................5-15 SiC MOSFET Static Characteristic ................................................................................5-18 SiC MOSFET Dynamic Characteristic ...........................................................................5-20 High-Voltage High-Power SiC Devices ..........................................................................5-22 DARPA High Power Electronics Program Roadmap ............................................................5-24 Summary ..............................................................................................................................5-25 6 PROPOSED DESIGN AND SPECIFICATIONS FOR FAMILY OF SOLID-STATE SWITCHGEAR ..........................................................................................................................6-1 A Conceptual Design Candidate for Developing a Family of Solid-state Switchgear....................6-5 The Proposed Universal Hybrid Switch .................................................................................6-5 Proposed Structure .........................................................................................................6-6 Operating under Fault Clearing Mode...............................................................................6-7 Operating under Linear Region ........................................................................................6-8 Generic Specifications for Hybrid Solid-State Switchgear Design ................................................6-9 Design Considerations for Hybrid Solid-State Current Limiters and Breakers ..............................6-10 Basic Requirements for a 15KV, 600A Hybrid Design for a Circuit-Breaker / Recloser / Current Limiter .................................................................................................................6-11 Optional Features (Scalable Implementation) ..................................................................6-14 7 ECONOMIC EVALUATION ..................................................................................................7-1 Economic Assessment An Overall Comparison ........................................................................7-3 8 EPRI SOLID-STATE SWITCHGEAR DEVELOPMENT R&D ROADMAP ........................8-1 Following the General Trends to Support the Vision Direction .....................................................8-1

Overall Roadmap Timeline for the "Hybrid" and Solid-State Switchgear Designs How to Realize the Vision in the Future ................................................................................................8-3 EPRIs Long-Term Roadmap ....................................................................................................8-7 Generation 1: 115KV Class Distribution Switchgear Development ........................................8-10 Phase I: Proof of Concept Design Analysis of family of Switchgear Topologies (Voltage Ratings: 15KV, 35KV, 138KV & Current Ratings: 600A, 1200A, 3000A) Year of Performance: 2006............................................................................................8-10 Phase II: Bench model Development and Testing of 15KV 600A Distribution Switchgear (Circuit Breaker/Current Limiter Unit/Transfer Switch) Year of Performance: 2006-2007 ...............................................................................................8-11 Phase III & IV: Field prototype development and testing of 15KV 600A distribution switchgear (Circuit Breaker/Current Limiter Unit/Transfer Switch) Year of Performance: 2008-2009 ...............................................................................................8-13 Phase V: Commercialization of a Family of Solid-State Switchgear (Circuit Breaker/Current Limiter Unit/Transfer Switch) Year of Performance: 2010 ......................8-13 9 REFERENCES ........................................................................................................................9-1

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LIST OF FIGURES
Figure 1-1 Application Trends in High-Voltage, High-Capacity Power Devices .................................1-2 Figure 1-2 Application of Solid State Switchgear at Distribution Voltage Levels [8] ...........................1-7 Figure 1-3 Application of Solid State Switchgear for Coupling New Generation.................................1-8 Figure 1-4 Solid-state Switchgear A Cornerstone for Advanced Distribution Automation .................1-8 Figure 1-5 Realizing the Vision for Developing a Communication and Control Infrastructure for Advanced Monitoring ...........................................................................................................1-9 Figure 3-1 Approximate Price Ranges for Reactive Power and Harmonic Compensation Devices ........3-4 Figure 3-2 Basic Diagram of a Static Transfer Switch ......................................................................3-5 Figure 3-3 Automatic Transfer Switch ............................................................................................3-6 Figure 3-4 3.6KV, 200A S-GTO AC Switch from Silicon Power [32] ...............................................3-8 Figure 3-5 Basic Configuration of Mitsubishi's Hybrid Switch Unit [33-34] .....................................3-10 Figure 3-6 Working Principle of Mitsubishi's Solid State Hybrid Transfer Switch [33-34] .................3-11 Figure 3-7 Basic Configuration for a Static Switch ........................................................................3-13 Figure 3-8 Basic Configuration for a Single-Phase STS ..................................................................3-14 Figure 3-9 Example Waveform of STS Operation: Preferred Source Voltage and Current ................3-15 Figure 3-10 Example Waveform of STS Operation: Alternate Side Voltage and Current ...................3-15 Figure 3-11 Example Waveform of STS Operation: Load Side Voltage ...........................................3-15 Figure 3-12 Example Three-Phase Transfer...................................................................................3-16 Figure 3-13 Medium Voltage Static STS Topology Used by Mitsubishi...........................................3-19 Figure 3-14 Medium Voltage Static STS Topology Used by Silicon Power ......................................3-20 Figure 3-15 Medium Voltage Static STS Topology Split-Bus Configuration .................................3-21 Figure 4-1 Generalized fault current trace with FCL activated [8] .....................................................4-2 Figure 4-2 Solid-State Switch Operation without Having to Interrupt Immediately or Fault Current Limiting ...................................................................................................................4-3 Figure 4-3 Using GTO-Based Solid-State Circuit Breaker Allows Instant Fault Current Clearing. ........4-3 Figure 4-4 Principle of a solid-state fault current limiting circuit breaker based on turn-off devices ......4-4 Figure 4-5 Solid-State Fault Current Limiter Using SCR and Force-Commutating Circuits..................4-5 Figure 4-6 These capacitor cans are connected in parallel to make up the large commutating capacitors, the largest component in EPRI's SCR Based 15KV, 1200A SolidState Fault Current Limiter ..............................................................................................4-6 Figure 4-7 Solid-State Breaker Proposed by Westinghouse ...............................................................4-7 Figure 4-8 A Hybrid Solid-State Switch Using Mechanical Switch for Regular Conducting and PTC for current limiting. .......................................................................................................4-9

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Figure 5-1 Application Trends in High-Voltage, High-Capacity Power Devices [11-13]......................5-3 Figure 5-2 HV Device Roadmap and Development Projection Based on DARPAs R&D Program [10-13] ................................................................................................................................5-3 Figure 5-3 Requirements for the Next Generation HV Semiconductor Switches and Diodes ................5-4 Figure 5-4 Thyristor: (a) Internal Sturcture; (b) Equivalent Circuit; (c) Schematic Symbol. .................5-5 Figure 5-5 ....................................................................................................................................5-6 Figure 5-6 Gate-Turn-Off thyristor: (a) Internal Structure; (b) Equivalent Circuit; (c) Schematic Circuit Symbol. ....................................................................................................................5-7 Figure 5-7 Photograph of (a) Photograph of ABB 5SHY30L6010 Unidirectional IGCT; (b) ABB 5SHZ08L6000 Reverse Blocking Type IGCT [12-13] ..............................................................5-8 Figure 5-8 Schematic circuit diagram of ETO .................................................................................5-9 Figure 5-9 Photograph of a 4kA/4.5kV ETO4045A [12-13] ............................................................5-10 Figure 5-10 Turn-off voltage and current waveforms of the ETO at the bus anode voltage of 2 kV and the anode current of 2 kA. .............................................................................................5-10 Figure 5-11 Toroidal air core used for the ETO snubber inductor ....................................................5-11 Figure 5-12 The di/dt limitation of the top switch current during turn-on period at 1.5kV bus voltage ...............................................................................................................................5-11 Figure 5-13 Comparison of SGTO and standard 4500V 85mm GTO design. .....................................5-12 Figure 5-14 Insulated Gate Bipolar Transistor (IGBT) Structure and Symbol: (a) Basic IGBT Structure; (b) IGBT Equivalent Circuit and Symbol; (c) Schematic circuit symbol. ...................5-13 Figure 5-15 Photograph of ABB 5SNA0600G650100 High-Voltage IGBT. .....................................5-13 Figure 5-16 Voltage and Current Waveforms of a High-Voltage Insulated Gate Bipolar Transistor (HV-IGBT) Switching at 2-kV and 700-A Conditions: (a) turn-on and (b) turn-off. ..................5-14 Figure 5-17 SiC Potential for Wide Bandgap High Power Electronics.......................................5-16 Figure 5-18Cross-sectional structure of power MOSFET ................................................................5-18 Figure 5-19 Static voltage and current characteristic of a 385V SiC MOSFET. .................................5-19 Figure 5-20 Static Voltage and Current Conduction Characteristic of a newly Developed SiC MOSFET Rated 10kV, 2A. ..................................................................................................5-19 Figure 5-21 Static Reverse Blocking Characteristic of the 10kV, 2A SiC Power MOSFET. ...............5-20 Figure 5-22 SiC MOSFET Gate Drive Voltage During Turn-off. ....................................................5-20 Figure 5-23 Turn-off Device Voltage for an SiC 10kV, 2A MOSFET ..............................................5-21 Figure 5-24 Turn-off Device current for an SiC 10kV, 2A MOSFET ...............................................5-21 Figure 5-25 RBSOA Characteristic of 10kV, 2A SiC MOSFET ......................................................5-22 Figure 5-26 4mm SiC GTO Current Density and Voltage Drop Characteristic. ................................5-23 Figure 5-27 SiC IGBT Internal Structure. .....................................................................................5-23 Figure 6-1 Circuit Diagram and Basic Operation Waveform of the Proposed Universal Hybrid Switch .................................................................................................................................6-7 Figure 6-2 The Proposed UHS Operating Under Fault Clearing Mode ...............................................6-7 Figure 6-3 The Proposed UHS Operating Under Linear Region for Fault Current Limiting..................6-8 Figure 6-4 The Proposed UHS Adopting GTO or GTO-Derived Device as the Switching Device for PWM Operation ..............................................................................................................6-9
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Figure 7-1 Circuit Configuration of the Universal Hybrid Switch ......................................................7-3 Figure 7-2 Circuit Configuration of the 15kV, 600A HV-IGBT Based Universal Hybrid Switch. .........7-4 Figure 8-1 A Stage-Gate Approach for New Product Development ...................................................8-2 Figure 8-2 Closing the Device Design Loop A Key for Building Optimal Application-Specific Power Devices......................................................................................................................8-5 Figure 8-3 Trends in Semiconductor Device Advancement [DARPA HPE Program] ..........................8-6 Figure 8-4 A Generic Technology Roadmap to Realize a Family of Power Electronics Based Switchgear Designs in Distribution and Transmission Applications ...........................................8-7 Figure 8-5 Projections of Possible Phases and Individual Tasks for Design and Development (20062010) .........................................................................................................................8-9 Figure 8-6 EPRIs Long-Term Roadmap for the Proposed First Generation Medium Voltage Solid-State Switchgear Development Schedules and Important Milestones ............................8-10 Figure 8-7 Distribution Test Feeder at Hydro Quebec ....................................................................8-12

LIST OF TABLES
Table 2-1 Typical Indoor Distribution Circuit Breaker Ratings [18, Table 1] .....................................2-1 Table 2-2 Typical 15-kV class circuit breaker short-circuit ratings ....................................................2-3 Table 2-3 Typical Indoor Distribution Circuit Breaker Ratings [8, Table 1] .......................................2-4 Table 2-4 Typical Outdoor Distribution Circuit Breaker Ratings [18, Table 2] ...................................2-5 Table 3-1 Summary of Custom Power and Related Customer-Side Power Conditioning Devices .........3-3 Table 3-2 Cyberex Static STS Specifications.................................................................................3-23 Table 3-3 InverPower Static STS Specifications ............................................................................3-24 Table 3-4 Overall System Ratings for Two Different Options .........................................................3-25 Table 3-5 Mitsubishi Static STS (Hybrid Unit) General Specifications ............................................3-26 Table 3-6 Voltage/Current Electrical Specifications for Silicon Power's MV-STS.............................3-27 Table 3-7 Silicon Power Static STS Detailed Specifications ...........................................................3-28 Table 3-8 S&C PureWave Static STS Specifications ......................................................................3-29 Table 5-1. Comparison of three commercially available high-voltage high-power thyristors ................5-6 Table 5-2 Comparison of commercially available GTO and GTO derives devices...............................5-8 Table 5-3 Comparison of Four Commercially Available HV-IGBTs ................................................5-15 Table 5-4 Key Properties of Wide-Band Gap Semiconductor Materials ...........................................5-16 Table 5-5 Overall Comparison of Different Commercially Available Devices ..................................5-25 Table 7-1 Estimates of Small-Quantity Production Cost for the Hybrid Universal Switch ....................7-5

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1
INTRODUCTION
The electric power infrastructure is now caught in this post-revolutionary challenge of catching up to the new demands placed upon it by a 24/7 digital world. Even a true visionary like Thomas A. Edison could not have imagined the level of sophistication that would be required of equipment used for the transmission and distribution of electric power a little more than a century after its invention. Nor could he have anticipated all of the complex issues facing the electrical industry as it moves into the twenty-first century. Power switching technology in low and high power applications has followed a progression from mechanical switches to vacuum/arc switches, and finally, to solid state switches. At low voltages and power, virtually every electronic system uses solid state switching for power control. The utility industry has followed this same progression in its distribution switchgears (circuit breakers, transfer switches, fault current limiters). Mechanical switches and vacuum breakers are common throughout the industry, and represent the vast majority of 15 kV-class switchgear installations. Simple solid state switches (thyristors, GTOs, etc.) have been introduced for medium voltage commutated and load transfer applications, and at very high voltage levels, such as HVDC links. Recently new designs of solid-state breakers ("all solid-state" as well as "hybrid" designs), transfer switches, and fault current limiters using modern power electronics have captured the attention of utilities as well as equipment producers. New designs for an intelligent "all solidstate" as well as "hybrid" distribution and transmission switchgears have resulted from the marriage of advanced power electronics ((Figure 1-1) and conventional switchgear technology. The operating characteristic of solid-state switchgear is primarily dictated by the capabilities of the semiconductor devices used. Voltage and current ratings of the breaker define the number of power semiconductors required and, consequently, the cost and the operating losses of the breaker. What if this technology could provide a way where the delivery of service is a smart interface device that enables utilities to provide power that can respond to and can literally meet the changing dynamic needs of the equipment? This approach would then radically alter the way electric utilities serve their respective customers. The concept would then be one that is a scalable, configurable, programmable, transformable, multi-functional approach to serving the customer. By integrating a smart device to the main delivery point for most customers the utility can broaden the traditional service offerings and satisfy a myriad of customer requirements for power quality and reliability. These intelligent devices could then expand the capabilities of a conventional distribution and transmission switchgears to an integrated electrical customer interface and at the same time provide advanced distribution automation functionalities. 1-1

Introduction

This report summarizes the concept of solid-state, medium voltage, high power conversion power electronics based switchgears, discusses the relevant solid-state switchgear topologies, and presents the structure and benefits of the proposed switch and system designs for distribution and transmission systems.
TRACTION Application
Line Voltage:

INDUSTRIAL DRIVES
Line Voltage:

PULSE POWER
Line Voltage:

INTELLIGENT UNIVERSAL TRANSFORMER


Line Voltage:

DISTRIBUTION /TRANSMISSION SWITCHGEAR


Line Voltage:

0.5 - 5 kV DC 0.1-10MVA

2-5 kV AC 0.1 10MVA

>10kV / 10MVA

15-100kVA 15kV Class 15Kv, 35Kv, 138kV Class

Design

Standard Converter &Inverter

Standard Converter &Inverter/ 3-Level Circuit

Series Connection Pulse Transformer

3-Level/ 5-Level Circuit

All-Solid State and Hybrid Circuit

VMAX Across Semiconductor

1- 6.5 kV

1 6.5 kV

> 6.5 kV

> 4.5 kV

> 6 kV

> 4.5kV IGBT/GTO/"Super"-GTO/Thristor/SiC Modules

Figure 1-1 Application Trends in High-Voltage, High-Capacity Power Devices

Power System Functions that Drive the Requirements for Solid-State Switchgear
Today, pressures are increasing on electric service providers to provide a higher quality and reliable product on demand when customers need it and at a price point that is acceptable to customers. There are factors in todays environment to consider, including increased sensitivities of customer equipment and process to system faults, increase in fault current levels throughout the power grid, implications of coupling distributed generations and new forms of generation to the power grid, higher energy costs, increasingly stringent environmental regulations, and diminishing energy reserves. In this environment, power producers need to mix and match their electrical services offering to meet the customers changing requirements. The first, the most important factor that we have to apply to the power system today is to make it a digitally controlled system. We have a digital economy and we're still trying to provide power to it through a mechanical design system that was designed over 50 years ago. Its a marvelous system, but we've been effectively borrowing against the future to pay for the present, and the future has caught up with us; we need to build the system to serve the digital society of the 21st century. Over the past couple of years there has been a phenomenal increase in R&D activities towards the development of technically feasible and economically viable technologies to design power

1-2

Introduction

electronics based applications (medium voltage and high voltage levels) in distribution and transmission. EPRI's multi-year R&D activity to develop the distribution and transmission level fault current limiter (2000-2005) More details on these activities can be founded from references [1] through [8]. EPRI's multi-year R&D activity to develop high voltage universal transformer for distribution application (2002-2005) More details on these activities can be founded from references [9] through [13]. Mitsubishi's ongoing R&D efforts to develop distribution class solid-state breakers (15KV, 600A/1200A) and transfer switches Silicon Power Corporation's ongoing efforts (supported by EPRI, Office of Naval Research, and Department of Energy) to investigate the feasibility of using Super-GTO technology for medium and high voltage current limiters and transfer switches of the future DARPA High Power Electronics Program was also recently established with the goal to revolutionize high power electrical energy control, conversion, and distribution by establishing a new class of solid state power switching transistors employing wide bandgap semiconductor materials.

Gunpowder, the printing press, the commercial generation of electricity, the personal computer, and the Internet were all major paradigm shifts. Not surprisingly, they all swept away current practice or modified it significantly. In each case, there was a present need, a confluence of technologies, and a vision of how to combine technology and need for economic gain and unprecedented advantage. The need for solid-state switchgear must be based on clearly defined utility requirements to meet added functionalities and availability of power electronic technology. Therefore, utility requirements drive the need for the development and deployment of next-generation power electronics based solid-state switchgear. This understanding is vital to the design, implementation, and acceptance in any utility. Extensive literature review revealed that new ventures on "hybrid" and "all solid-state" switchgear designs and research development efforts of high voltage semiconductor technologies potentially have a significant value chain. Based on the preliminary results and on-going research in these areas, solid state switchgear designs ("all solid-state" as well as "hybrid" designs) have the potential to offer a myriad of advantages that prospective purchasers may find attractive and may make them successful in the marketplace. While the potential benefits of solid-state switchgear have long been apparent, potential high production costs have curtailed development efforts. Advances in high power solid-state components now make possible solid-state switchgear at a reasonable cost. The advantages of added functions that a conventional circuit breaker cannot offer help to justify the higher cost associated with a solid state breaker. Motivations for possible market transformation using next-generation family of universal power electronics based switchgear designs, include: Rapid Load Transfer Capabilities Solid-state transfer switches are the primary application for distribution solid state switchgear at the present time. These designs are used to transfer the power supply of sensitive loads, from a "normal" supply system to "alternate" supply 1-3

Introduction

system when a failure is detected in the "normal" supply. This transfer needs to be performed in a very fast way (1/4 cycle) so that the load does not experience any power quality problem Circuit sectionalizing and reconfiguration Solid state switches have the potential to eliminate momentary interruptions for the great majority of customers on distribution systems when a fault occurs. Solid state switches for reconfiguring systems can also allow for optimizing performance through reconfiguration without imposing momentary interruptions on customers Rapid Fault Current Solution Deployment Solid state switchgear designs will enable transmission and distribution entities (see Figure 1-2) to effectively deal with pressures to add new transmission capacity, provide open access for distributed and aggregate generation and deal with the challenges presented by new fault current sources. Rapid Fault Isolation and Aid Power Quality Improvements With the flexibility of power electronic switching, the solid state switchgear will achieve fault isolation and provide better network protection and take care of most of the distribution system situations that result in voltage sags, swells, and power outages Instantaneous Current Limiting Solid state switchgear designs will provide instantaneous (sub-cycle) current limiting. Solid State switchgear will alleviate the short circuit condition in both downstream and upstream devices by limiting fault currents coming from the sources of high short circuit capacity. Faster Fault Clearing and Shorten Recloser Interval - Utilities may wish to clear faults more quickly than current circuit breakers allow Mitigating the Effects of New Generation Within Distribution System New generation (see Figure 1-3) will increase the available fault current of the network and may result in existing equipment not being adequately rated to handle the new ratings. Upgrading the system to accommodate the new fault current ratings may be expensive and create excessively high prices and barriers to new generation. The solid state switchgear designs with current limiting capabilities can be used to mitigate this situation. Interfaces with distributed generators Solid state switches can facilitate implementation of local islanding schemes for distributed generators and allow connection and disconnection without concern for transients Repeated Operations With High Reliability and Without Wear-Out High fault currents are known to be a factor in reducing transformer life, so it is expected that an advantage from the use of a current limiting breaker will be longer life with higher reliability for nearby transformers Curtail Mechanical Wear and Tear in Equipment Equipment in the fault current path will not experience the high asymmetrical and symmetrical fault currents that would be possible without the solid state switchgear Soft Start Capability Limit the inrush current for capacitive loads, by gradually phasing in the switching device rather than making an abrupt transition from an open to a closed position Reduce Switching Surges Solid state switches can prevent transient voltages during capacitor switching and will allow capacitors to be switched in and out as often as needed.

1-4

Introduction

The result is better control of VAR flows, voltage, and flicker on the distribution system without causing unacceptable transient voltages Standardization Implementing standardized designs and provide alternative to large scale power system breaker upgrades. There are fixed and variable costs in maintaining an inventory of distribution switchgears. One of the primary functional specifications for the solid state switchgear designs is standardization of product classes compared to the existing practice based on multiple voltages and current rating. Realization of this primary functional specification should result in significant reduction in inventory cost. It is possible to significantly reduce inventory costs by introducing standardized switchgear designs. Avoid the Use Traditional (series reactor) Fault Current Limiting Solutions Improved operations and asset management The operations-and-maintenance (O&M) cost reduction are potentially achievable with solid state switchgears through significant reduction of size and weight and improved communication capabilities by adopting the IEC 61850 communication architecture Minimize Environmental Impact By minimizing the need for SF6 breakers, the new solid state switchgear designs will help diminish the environmental impacts of greenhouse gas and arced oil associated with breakers Other Advanced Distribution Automation Functions Advanced distribution automation provides opportunities to develop new applications for condition monitoring and asset management purposes. Act as a Smart Sensor One potential area is for the solid-state switchgear to act as a sensor of voltage, current, and power factor and provide other advanced distribution automation functionalities (see Figure 1-4). Solid-state switchgear can be automated to record and transfer vital power quality and reliability information. Some of these functionalities include: Capable of providing real time information about voltage magnitude, current magnitude, power quality characteristics of the voltage and current, real and reactive power, temperature, energy use, harmonic distortion, power factor, etc.. Alarming functions with intelligence for processing data and identifying conditions that require notification of the utility or utility automation system. These could include outages, power quality conditions outside of specified thresholds, excessive energy use, conditions characteristic of equipment problems, incipient fault detection, equipment problem identification, fault location, performance monitoring of protective systems, harmonic resonance conditions, etc. Real time state estimation and predictive systems (including fault simulation modeling) to continuously assess the overall state of the distribution system and predict future conditions, providing the basis for system optimization. Information systems that can integrate meter data with overall information systems for optimizing system performance and responding to problems (outage management, asset management, SCADA, loss analysis, customer systems, etc.) Integrate communications and control functions in order to optimize system performance 1-5

Introduction

Open, Standardized Communication Architecture An open, standardized communication architecture is needed to achieve the requisite central and local control by which the flexible electrical system described above will be strategically operated using predetermined algorithms. Key features include: Solid-state switchgear should conform to IEC 618501 and to be remotely accessible via a communication system (see Figure 1-5) for remote control and use as a distribution system condition monitoring node Provide procedures and protocols for communications technology in the meter with appropriate protocols and information systems to support two-way communication between an overall communication system and the individual customer facility meters.

IEC 61850 This is the international standard document for substation automation systems developed under IEC Technical Committee (TC) 57. It defines the standards for communication architecture in the substation and the related system requirements. It supports all substation automation functions and their engineering. Different from that of earlier standards, the technical approach makes IEC 61850 flexible and future-proof. Additional parts of 61850 are currently under development by working groups of TC-57 to address standards for communications in the balance of the distribution system (feeder equipment)

1-6

Introduction

SSB

Transmission network

1 Generator feeder 2 Network coupling 3 Busbar coupling 4 Transformer feeder 5 Busbar connection / feeder 6 Coupling local generating units 7 Closing ring circuits 8 Capacitor Switches

Distribution network

2
SSB

Distribution network

Distribution network

3
SSB SSB SSB

SSB 4

SSB SSB SSB

Figure 1-2 Application of Solid State Switchgear at Distribution Voltage Levels [8]

1-7

Introduction

Photovoltaic (10 kW)

Wind (10 kW)

DC Level Converter

SOLID STATE SWITCHGEAR


Utility System Primary (13.2 kV) Inverter

Distribution Transformer

DC Level Converter Energy Storage

DC Level Converter Fuel Cell (25 kW)

Figure 1-3 Application of Solid State Switchgear for Coupling New Generation

Solid-state switchgear

Solid-state switchgear Solid-state switchgear

Figure 1-4 Solid-state Switchgear A Cornerstone for Advanced Distribution Automation

1-8

Introduction

Power System Infrastructure

Central Plant

Step-Up Transformer

Communication Infrastructure

Distribution Substation
Microturbine
Solid-state Switchgear Photo voltaics

Gas Turbine

Receiving Station

Solid-state Switchgear

Distribution Substation

Recip Engine

Distribution Substation
Recip Engine
Solid-state Switchgear

Fuel cell

Commercial

Batteries Flywheel Fuel Cells


Gas Turbine

Commercial

Residential

Industrial

Figure 1-5 Realizing the Vision for Developing a Communication and Control Infrastructure for Advanced Monitoring

Report Intent
The opportunity to make significant improvements in asset utilization is typically found in research and development of new technology or through radical design modifications. This report recognizes the significant opportunity that exists to increase utilization of electromechanical switchgears through fundamental improvements using a more sophisticated device; power electronics based solid-state switchgear. The research behind this report was performed to assess the requirements for a next generation medium and high voltage solid-state switchgears, identify the application areas, and evaluate the economic and technical considerations for different technologies and design options. This preliminary research is the first step before embarking on development of the hardware and associated controls for development of a family of low-cost solid-state switchgear for a range of distribution applications a prototype version of solid-state switchgear. The first step towards commercial utilization of the solid-state switchgears can be started with this project for a solidstate switchgear feasibility assessment. This phase of the project involves more detailed definition of requirements and evaluation of the technology benefits for economic assessments. The requirements will form the basis of device specifications that can be used to develop partnership arrangements with manufacturers for development and commercialization of the

1-9

Introduction

technologies. This is in keeping with EPRIs mission of providing science and technology-based solutions of indispensable value to our global energy customers and society. This feasibility assessment will lead to the development of a family of low-cost solid-state switchgear for a range of distribution and transmission applications. The solid state switchgear will be appropriate for applications in existing distribution systems to improve reliability and solve specific concerns. In addition, they will become an integral part of advanced distribution automation (ADA) systems with coordinated monitoring and control of virtually all components of the system. The project approach of developing a family of products will lower capital costs for the technology to improve the economics of applying the technology in a wider variety of applications. Variety of applications for the applicability of developing solid state switches was investigated. Examples include: Circuit sectionalizing and reconfiguration. This is an important application as solid state switches have the potential to eliminate even momentary interruptions for the great majority of customers on distribution systems when a fault occurs. Solid state switches for reconfiguring systems can also allow for optimizing performance through reconfiguration without imposing momentary interruptions on customers. Solid state transfer switches are the primary application for distribution solid state switchgear at the present time. This technology provides a good starting point for the technology characterization effort in this project. Capacitor bank switching. Solid state switches can prevent transient voltages during capacitor switching and will allow capacitors to be switched in and out as often as needed. The result is better control of var flows, voltage, and flicker on the distribution system without causing unacceptable transient voltages. Interfaces with distributed generators. Solid state switches can facilitate implementation of local islanding schemes for distributed generators and allow connection and disconnection without concern for transients. Fault clearing and current limiting applications. Clearing faults quickly and/or limiting the fault currents can have tremendous advantages for both the utility and for customers. The utility benefits because the fault current impact on system components (cables, transformers, switchgear, etc.) is reduced. Customers benefit because the voltage sag experienced throughout the system due to the fault is basically eliminated.

The overall objective of this multi-year project is to develop and commercialize a family of lowcost, multifunctional, solid-state switchgear for distribution and transmission applications. The objectives of the requirements definition phase delineated in this work statement are: Develop a detailed definition of the requirements for product development Evaluation of present and existing designs that are either at the conceptual stage in development, prototype level or at a more matured level Appraisal of current switchgear technology and review the current state of the art in conventional and solid-state switchgear to identify the technology gaps that must be filled to meet the product familys needs

1-10

Introduction

Review the future needs for switchgear equipment (with multiple functions), and provide clarification of technology development requirements for the new family of multifunction switchgear Based on literature review, identify current and expected future distribution switchgear applications and will assess the needed characteristics for switchgear in these distribution system applications Identify the functions that the switchgear is to provide, such as 1) current interruption, 2) current limiting, 3) fast fault clearing and detection, 4) distribution system condition monitoring, and 5) remote communication linkage with automated distribution operating systems Detailed review of existing power semiconductor device technology and ability to build up solid-state switchgear products of multiple ratings in a family which will have low cost in volume production Evaluate a conceptual design candidate of solid-state switch concepts and conduct a feasibility analysis (economic as well as technical) Identify a recommended selection of functions to be included in the switchgear products based on the applications. Develop the cost/benefit perform feasibility analysis and the evaluate the projected costs for the proposed approach Initiate discussion with various manufacturers to assure the technical feasibility of the proposed approach is feasible Provide a EPRI long term technology roadmap for the development and commercialization cycle for the next-generation solid-state switchgear family

A new hybrid switchgear design is presented in this report which is an innovative, scalable and offers a multi-functional approach to next generation medium and high voltage solid-state switchgears. The topology proposed here is the first design that has the potential of achieving all of the goals for a solid state circuit breaker such as rapid fault clearing, instantaneous fault isolation, fast current limiting for downstream coordination, soft switching capabilities, rapid load transfer, voltage and current monitoring, and a sale price of 5 to 7 times that of conventional breakers and reclosers. This conceptual design appears to be a suitable candidate to the development of a family of low-cost solid-state switchgear which can expand the capabilities of existing switchgears to a modular integrated electrical interface and create new service opportunities to meet the customers' requirement and is therefore a viable market opportunity. The proposed approach is based on innovative, multi-functional, modular, and hybrid design of power electronics based switchgear. The intent here is not to make recommendations for a specific design or a specific semiconductor device. The question is, Is there a possibility that other designs may evolve that might meet the need? The answer is perhaps. This decision will have to be made by the manufactures to come up with other innovative designs that will meet the specification or through a competitive procurement process to select a vendor/developer/partner. These designs will guide the development of the smart solid-state switchgear. 1-11

Introduction

Report Organization
This report describes the findings of the research performed to assess the requirements for a next generation solid-state breakers ("all solid-state" as well as "hybrid" designs), identify the application areas, and evaluate the economic and technical considerations for different technologies and design options for a family of low-cost solid-state switchgears. The report outlines a research roadmap for design and development of the proposed technology and identifies the key functionalities and criteria that need to be met in order for this technology to gain market acceptance. Chapter 2 provides a general overview of current switchgear technology and reviews and appraises the current state of the art in conventional and solid-state switchgear for identifying the technology gaps that must be filled in current switchgear technology. The chapter includes discussions outlining 1) future needs for switchgear equipment, 2) current and expected future distribution switchgear applications, and 3) possible market drivers for this new device which is expected to provide a range of functionalities beyond that available with conventional switchgears Chapter 3 provides the results of an in-depth literature review of the existing and emerging static transfer switch designs. For each technology, the chapter provides a brief overview of the working principle, proposed circuit topologies and configurations, potential application areas, possible price ranges, pros and cons of the proposed designs, and, most importantly, maturity of these technologies. Chapter 4 provides the results of an in-depth literature review of the existing and emerging power electronics based fault current limiters. For each technology, the chapter provides a brief overview of the working principle, proposed circuit topologies and configurations, potential application areas, possible price ranges, pros and cons of the proposed designs, and most importantly maturity of these technologies. Chapter 5 provides a detailed review of the state-of-the-art high-power commercial and research power semiconductor device technology (Si and SiC) and their ability to build up solid-state switchgear products of multiple ratings in a family which will have low cost in volume production. Key considerations includes: 1) Technology availability (thyristors, GCT, IGBT, SiC, etc.) 2) Current handling and current interrupting 3) Communication and control considerations 4) Cooling requirements 5) Snubber requirements 6) Space requirements. It also provides discussion on maturity of high-voltage power electronic devices, and research and development recommendation for devices that can be utilized in the next generation "all solidstate" as well as "hybrid" switchgear designs. It also documents the current status of wide-bandgap semiconductor technology and its application areas. Comparisons of the Si technology with wide band-gap technologies in the context of switchgear application area are documented. This chapter also provides a consolidated summary of the key technology metrics, based on DARPAs R&D program, that are required to realize the development of high-voltage semiconductor devices. Chapter 6 evaluates a conceptual design candidate for the next generation solid-state switchgear and defines the functionality requirement for this multi-functional switchgear 1-12

Introduction

Chapter 7 provides the overall economic assessment for new hybrid switchgear design proposed in chapter 6. Preliminary production cost and benefit analysis are based on existing and estimated component costs. Cost estimates are derived for two separate ratings 1) 15KV class 600A and 2) 35KV 1200A. Complete listing of all the parts and its individual costs are also provided. Chapter 8 provides EPRI's long term technology roadmap for the development and commercialization cycle for the next-generation solid-state switchgear family in distribution and transmission. This chapter provides a detailed description of the possible phases for design and development of the chosen switchgear technology along with schedules, important milestones, and commercialization cycle for the development work in 20062010 and field testing and commercialization in 2011-2012. .

1-13

2 STATUS AND NEEDS ASSESSMENT OF


DISTRIBUTION SWITCHGEAR
EPRI has undertaken the development of a family of power electronics based switchgear applications at both distribution and transmission class voltages. Because this technology is relatively new, there is a still lack of standards and procedures. Solid-state switchgears ("all solid-state" as well as "hybrid" designs) will have many features that are significantly different from todays electromechanical circuit breakers and is certain to have a profound impact on present practices in both transmission and distribution systems. It is essential to carefully examine application areas, understand what parts of a system might be sensitive and possibly to develop a detailed definition of the requirements for product development for the new device. This chapter addresses the following: Provides a general overview of current switchgear technology and reviews and appraises the current state of the art in conventional and solid-state switchgear for identifying the technology gaps that must be filled in current switchgear technology, Determines the future needs for switchgear equipment (with multiple functions), Identifies current and expected future distribution switchgear applications (based on literature review) and will assess the needed characteristics for switchgear in these distribution system applications Attempts to identify possible market drivers for this new device which is expected to provide a range of functionalities beyond that available with conventional switchgears by taking advantage of advances in power electronics and other related technologies. Functions that the switchgear needs to provide include: 1) current interruption, 2) current limiting, 3) fast fault clearing and detection, 4) distribution system condition monitoring, and 5) remote communication linkage with automated distribution operating systems Provides clarification of technology development requirements for the new family of multifunction switchgear.

Existing Switchgear
A wide range of switchgear is used on medium-voltage distribution systems. Table 2-1 summarizes many of the common applications of distribution switchgear.

Table 2-1

2-1

Status and Needs Assessment of Distribution Switchgear

Typical Indoor Distribution Circuit Breaker Ratings [18, Table 1]

Location Station bus Station feeder Branch points Feeder mainline switch Feeder tie switch Customer switch Capacitor switch

Purpose Backup fault interruption Fault interruption and sectionalizing Fault interruption and sectionalizing Sectionalizing and possibly Sectionalizing Fault interruption and sectionalizing Fault interruption and sectionalizing

Typical devices Circuit breaker Circuit breaker or recloser Fuse, possibly a sectionalizer or single-phase recloser Nonload-break switch, loadbreak switch, recloser, or possibly fuses Nonload-break switch, loadbreak switch, or recloser Load-break switch, recloser, and/or fuses Vacuum or oil switch plus expulsion and/or currentlimiting fuse Fuse, current limiting fuse

Communication Common (Scada) Common (Scada) Rare Rare

Rare Rare Sometimes

Transformer Fault interruption and switch sectionalizing

Never

Many different switching technologies are used because of the broad range of needs on distribution primary. Fault currents can range widely on distribution circuits, from over 40 kA at some urban substations to only hundreds of amperes at the ends of rural circuits. Some switchgear has fault clearing capabilities, and some does not. Because of the high number of switch locations, low cost is a major consideration. Fuses are so widely used because of cost and simplicity. The differing characteristics of distribution switchgear can make coordination of fault-clearing switchgear difficult. Circuit Breakers Circuit breakers are often used in the substation on the bus and on each feeder. Circuit breakers are available with very high interrupting and continuous current ratings. The interrupting medium in circuit breakers can be any of vacuum, oil, air, or SF . Oil and vacuum breakers are most common on distribution stations with newer units being mainly vacuum with some SF .
6 6

2-2

Status and Needs Assessment of Distribution Switchgear

Circuit breakers are tripped with external relays. The relays provide the brains to control the opening of the circuit breaker, so the breaker coordinates with other devices; and the relays also perform reclosing functions. Distribution circuit breakers are typically 500 to 1000 MVA (breakers are historically rated as constant MVA devices). The symmetrical interrupting rating of a 100-MVA breaker is around 48 kA (see Table 2-2 for typical ratings and Table 2-3 and Table 2-4 for wider ranges of ratings available). Load current ratings from 600 to 2400 A are available. The circuit breaker interrupting time is defined as the interval between energizing the trip circuit and the interruption of all phases. Most distribution circuit breakers are five-cycle breakers. Older breakers interrupt in eight cycles. Distribution circuit breakers are three-phase devices. When the trip signal is received, all three phases are tripped. All three will not clear simultaneously because the phase current zero crossings are separated. The degree of separation between phases is usually one half to one cycle.
Table 2-2 Typical 15-kV class circuit breaker short-circuit ratings
500 MVA 15 1.3 18 23 37 62 750 MVA 15 1.3 28 36 58 97 1000 MVA 15 1.3 37 48 77 130

Rated voltage, kV K, voltage range factor Short circuit at max voltage rating Maximum symmetrical interrupting, kA Close and latch rating 1.6 K rated short-circuit current, kA (asym) 2.7 K rated short-circuit current, kA (peak)

2-3

Status and Needs Assessment of Distribution Switchgear

Table 2-3 Typical Indoor Distribution Circuit Breaker Ratings [8, Table 1] Rated Maximum Voltage, kV, rms 4.76 Rated Continuous Current, A, rms 1200, 2000 1200, 2000 1200, 2000, 3000 8.25 15 1200, 2000, 3000 1200, 2000 1200, 2000 1200, 2000 1200, 2000, 3000 1200, 2000, 3000 1200, 2000, 3000 27 1200 1200, 2000 38 1200 1200, 2000 1200, 2000, 3000 1200, 2000, 3000 Rated ShortCircuit Current, kA, rms 31.5 40 50 40 20 25 31.5 40 50 63 16 25 16 25 31.5 40 Typical Cost

2-4

Status and Needs Assessment of Distribution Switchgear

Table 2-4 Typical Outdoor Distribution Circuit Breaker Ratings [18, Table 2] Rated Maximum Voltage, kV, rms 15.5 Rated Continuous Current, A, rms 600, 1200 1200, 2000 1200, 2000 1200, 2000, 3000 25.8 1200, 2000 1200, 2000 38.0 1200, 2000 1200, 2000 1200, 2000 1200, 2000 1200, 2000, 3000 Rated ShortCircuit Current, kA, rms 12.5 20 25 40 12.5 25 16 20 25 31.5 40 Typical Cost

2-5

Status and Needs Assessment of Distribution Switchgear

There are some opportunities to replace circuit breakers with competitive solid-state switches. The main benefits are fault-current limiting, speed of operation, and reduced maintenance. The main challenges are: CostMany utilities use reclosers in substations (where fault currents permit) mainly because of cost. CompatibilitySwitchgear must be compatible in size with other gear. It must be able to work in standalone (with sufficient battery backup). The control operation must be testable with relay test sets or other verifiable means.

Reclosers A recloser is a specialty distribution protective device capable of interrupting fault current and automatically reclosing. Like a circuit breaker, interruption occurs at a natural current zero. The interrupting medium of a recloser is most commonly vacuum or oil. The insulating medium is generally oil, air, a solid dielectric, or SF . The recloser control can be electronic, electromechanical (the relay for tripping is electromechanical, and the reclosing control is electronic) or hydraulic. A hydraulic recloser uses springs and hydraulic systems for timing and actuation.
6

The interrupting rating of a recloser is based on a symmetrical current rating. The interrupting current rating does not change with voltage. There is an exception that some reclosers have a higher interrupting current if operated at a significantly lower voltage than the rating. Smaller reclosers with a 50 to 200-A continuous rating typically have interrupting ratings of 2 to 5 kA (these would normally by feeder reclosers). Larger reclosers that could be used in substations have continuous current ratings as high as 1120 A and interrupting ratings of 6 to 16 kA. Historically, reclosers with series coil types had coil ratings of 25, 35, 50, 70, 100, 140, 200, 280, 400 and 560 A (each rating is approximately 1.4 times higher than the next lower rating). Reclosers are tested at a specified X/R ratio as specified in [15]. A typical test value is X/R = 16. While a lower X/R ratio at the point of application does not mean you can increase the rating of a recloser, the recloser must be derated if the X/R ratio is larger than that specified. There are some other differences with recloser ratings versus circuit breaker ratings [25]. Reclosers do not have to be derated for multiple operations. Reclosers do not have a separate closing and latching (or first-cycle) rating; the symmetrical current rating is sufficient to handle the asymmetry during the first cycle as long as the circuit X/R ratio is lower than the tested value. Reclosers have many distribution applications. We find reclosers in the substation as feeder interrupters instead of circuit breakers. An IEEE survey found that 51% of station feeder interrupting devices were reclosers [26]. Reclosers are used more in smaller stations and circuit breakers more in larger stations. Three-phase reclosers can be used on the main feeder to provide necessary protection coverage on longer circuits along with improved reliability. Overhead units and padmounted units are available. Reclosers are available as single-phase units, so they can be used on single-phase taps instead of fuses. Another common application is in autoloop automation schemes to automatically sectionalize customers after a fault. 2-6

Status and Needs Assessment of Distribution Switchgear

Since reclosers are devices built for distribution circuits, some have features that are targeted to distribution circuit needs. Three-phase units are available that can operate each phase independently (so a single-phase fault will only open one phase). Some reclosers have a feature called sequence coordination to enhance coordination between multiple devices. There are some opportunities to replace reclosers with competitive solid-state switches. The main benefits are speed of operation and reduced maintenance. The main challenges are: CostMany utilities use hydraulic reclosers because of cost, even though electronic reclosers offer more flexible control and coordination. SizeReclosers are easily pole mounted and can be pad mounted.

Expulsion Fuses Expulsion fuses are the most common protective device on distribution circuits. Fuses are lowcost interrupters that are easily replaced (when in cutouts). Interruption is relatively fast and can occur in a half of a cycle for large currents. An expulsion fuse is a simple concept a fusible element made of tin or silver melts under high current. Expulsion fuses are most often applied in a fuse cutout. In a fuse tube, after the fuse element melts, an arc remains. The arc, which has considerable energy, causes a rapid pressure buildup. This forces much of the ionized gas out of the bottom of the cutout, which helps to prevent the arc from reigniting at a current zero. The extreme pressure, the stretching of the arc, and the turbulence help increase the dielectric strength of the air and clear the arc at a current zero. The cutout is an important part of the fuse interrupter. The cutout determines the maximum interrupting capability, the continuous current capability, the load-break capability, the basic impulse insulation level (BIL), and the maximum voltage. Cutouts are typically available in 100, 200, and 300-A continuous ratings (ANSI standard sizes [14]). Cutouts are rated on a symmetrical basis. Cutouts are tested at X/R ratios of 8 to 12, so if the X/R ratio at the application point is higher than the test value, the cutout should be derated. The fuse line holder determines the interrupting capability, not the fuse link. Opportunities for replacing expulsion fuses with solid-state switchgear are likely to be limited for some time. Fuses are small and low-cost. They are one-shot devices, but they are easily replaced. Current-Limiting Fuses Current limiting fuses (CLFs) are another interrupter that has the ability to reduce the magnitude of the fault current. Current-limiting fuses consist of fusible elements in silicon sand. When fault current melts the fusible elements, the sand melts and creates a narrow tube of glass called a fulgerite. The voltage across the arc in the fulgerite greatly increases. The fulgerite constricts the arc. The sand helps cool the arc (which means it takes energy from the arc). The sand does not give off ionizable gas when it melts, and it absorbs electrons; so the arc has very little ionizable air to use as a conductor. Without ionizable air, the arc is choked off, and the arc resistance 2-7

Status and Needs Assessment of Distribution Switchgear

becomes very high. This causes a back voltage that quickly reduces the current. The increase in resistance also lowers the X/R ratio of the circuit that causes a premature current zero. At the current zero, the arc extinguishes. Since the X/R ratio is low, the voltage zero and current zero occur very close together, so there will be very little transient recovery voltage (the high arc voltage comes just after the element melts). Because the current-limiting fuse forces an early current zero, the fuse can clear the short circuit in much less than one half of a cycle. Current-limiting fuses are mainly used on equipment in high-fault current areas to limit the chance of equipment rupture. They are also occasionally used on taps. They have also been used to reduce the impact of voltage sags. Current-limiting fuses are noted for their very high fault-clearing capability. CLFs have symmetrical maximum interrupt ratings to 50 kA; contrast that to expulsion fuses which may have typical maximum interrupt ratings of 3.5 kA in oil and 13 kA in a cutout. Current-limiting fuses also completely contain the arc during operation and are noiseless with no pressure buildup. Current-limiting fuses have some of the limitations: One-shot devicesCurrent-limiting fuses provide excellent current limitation, but they are one-shot devices and so have no reclosing capability. CostExpulsion fuses are expensive relative to expulsion fuses.

Even given these limitations, the opportunities for using solid-state switchgear in place of current-limiting fuses is limited, mainly because the places utilities now use current-limiting fuses could not justify spending more on solid-state switchgear. One possibility is that if a solid-state current-limiting switch is used upstream, it could allow the utility to eliminate many downstream current-limiting fuses. This is especially applicable to 25and 35-kV distribution systems where fault currents are higher over a larger portion of the circuit and transformers with internal fuses have less fault-current withstand at these voltages. On these circuits, having a feeder-wide current-limiting switch could provide enough protection, so that the utility could eliminate the need to use many (50 to 200) current-limiting fuses.

Mitigation of Voltage Sags and Interruptions


There are three levels of possible solutions to voltage sag and momentary interruption problems: Modifying the power system design to produce fewer faults Modifying equipment design to be more tolerant of rms variations Installation of equipment to condition the power

2-8

Status and Needs Assessment of Distribution Switchgear

Power System Design Faults on the power system are the ultimate cause of both momentary interruptions and voltage sags. Any measures taken to reduce the likelihood of a fault will help reduce the incidence of sags and interruptions to customers. These measures can include the following remedies: 1. Converting overhead lines to underground cables 2. Trimming trees 3. Increasing application of surge arresters for lightning protection on overhead circuits 4. Increasing sectionalization of feeders and tap branches The protection philosophy of the utility distribution system will also impact the problems experienced by customers during fault conditions. With current practice, the entire distribution feeder is typically interrupted for temporary faults. One way to reduce the number of customers affected by the interruption is to install more fault-interrupting sectionalizing devices along the feeder. The devices on the line can be set to respond faster than the substation breaker and will only interrupt a smaller section of the feeder. Reducing the fault clearing time leads to less severe voltage sags. This approach affects not only the number of events but also their duration. Utilities could consider the opportunity to install current limiting fuses or solid-state breakers which are able to clear the fault within a half cycle, ensuring that no voltage sags will last longer in duration. An ideal application of a static breaker, is at the tie-line location. In the event of a fault on a feeder downstream, it provides fast bussplitting after which the fault is cleared by a downstream protective device, thus reducing the total fault current and the duration of the sag as seen by the loads supplied by the adjacent feeder. Some caution has to be used, however, when applying these new protection devices in existing distribution systems. If only some of the protective devices were replaced with static breakers (on incoming transformer circuits or feeder circuits, for instance), it would not be possible to coordinate them with previously existing downstream protective devices, due to their extremely fast operation. If faster fault clearing is needed, then the whole system has to be redesigned and all the protective devices have to be replaced with faster ones. This would greatly reduce the grading margin between the breakers, thus leading to a significant reduction in fault-clearing time. Fast devices can still be placed directly on the load, e.g. where there is no downstream protective device with which they must co-ordinate. A current-limiting fuse (much cheaper than a static circuit breaker) is very suitable in this case, since no re-closure is necessary: with a single load, the fault is likely to be permanent and repair is needed before power restoring. Another way of minimizing the effect of an interruption is to shorten the reclosing interval. While industrial processes will be knocked offline regardless, many residential loads can pick up without upset if the interruption is very brief. Clock resetting is one major problem that seems to respond to reducing the reclosing interval. While there may not be much economic impact with this, it is the source of many complaints. Florida Power Corporation (FPC) conducted an experiment whereby the reclosing interval for the first breaker operation was reduced from 2 2-9

Status and Needs Assessment of Distribution Switchgear

seconds to less than 0.5 seconds. In fact, it was reduced to as low as 0.3 seconds. It was found that this virtually eliminated residential customer complaints. The suspected reason is that most digital clocks will ride through an interruption of 0.5 seconds without losing time. One concern with such fast reclosing is that the fault will not clear. At the 15 kV class, FPC engineers were not able to notice an increase in breaker operations that would signify that faults were not clearing.

Key Advantages of Solid-State ("All Solid-State" as well as "Hybrid" Designs) Switchgear


Solid-state switchgear offers a number of possibilities [2-6]: Repeated operations with high reliability and without wear-out. Reduced switching surges. Faster clearing reduces the impact of voltage sags on adjacent circuits. Faster clearing reduces stress on distribution equipment and reduces damage at the fault location. Limited inrush current (soft start), even for capacitive loads

Fault-Current Limiting
Fault-current limiting is a major reason to consider solid-state switchgear. The following are the benefits of fault current limiters: FailuresCable thermal failures are less likely, and violent equipment failures are less likely. Conductor burndownsAt the fault, the heat from the fault current arc burns the conductor enough to break it, dropping it to the ground. Faster clearing and lower magnitudes reduces the chance of burndowns. Damage of inline equipmentThe most common problem has been with inline hot-line clamps. If the connection is not good, high-current fault arcs across the contacts can burn the connection apart. Faster clearing and lower magnitudes reduces the chances of such damage. Evolving faultsGround faults are more likely to become two- or three-phase faults with longer, higher-magnitude faults; current-limiting will reduce this probability. UnderbuiltFaults on underbuilt distribution are less likely to cause faults on the transmission circuit above due to rising arc gases with fault-current limiting. Equipment ratingsSome distribution stations have fault current levels near the maximum ratings of existing switchgear; additional short-circuit current requires reconfigurations or new technology. Fault-current limiting can solve this. ShocksStep and touch potentials are less severe during faults.

2-10

Status and Needs Assessment of Distribution Switchgear

Conductor movementConductors move less during faults (this provides more safety for workers in the vicinity of the line and makes conductor slapping faults less likely). Voltage sagsCurrent limiting reduces the depth of the voltage sag to customers on adjacent circuits. CoordinationFuse coordination is easier. Fuse saving is more likely to work with lower fault currents.

Faster clearing (without actual current limiting) can also helps with some of these benefits, but not to the degree that current limiting can. Current limiting reduces the energy at the location of the fault. This provides safety to workers and the public. Arc damage to life and property occurs in several ways: Pressure waveThe fault arc pressure wave damages equipment and personnel. HeatThe fault arc heat burns personnel and can start fires. Pressure buildup in equipmentAn arc in oil causes pressure buildup that can rupture equipment.

All of these effects are related to the arc energy and all are greatly reduced with current limiting. While fault-current limiting has many advantages, there are several considerations to think about. In particular, the use of an extremely fast acting current limiter raises many questions related to relaying practices. It is important to address the following: Consider the implications of operating a current limiting device in the power grid Understand what parts of a system might be sensitive and possibly to learn some requirements for the new device that may be driven by relaying considerations Analyze how the new modes of operation of the solid-state current limiter will affect relaying and how relaying will affect the existing protective device.

An important question that needs investigation is "how will this new device coordinate with upstream and downstream switchgear?" Coordinating two of these devices in series may be tricky as they both try to limit fault current. The upstream device may need a delay or some sort of slower response curve. A fault-current limiting device would work quite well in a fuse saving scheme where the substation device tries to operate before downstream fuses. Because of its speed and currentlimiting capability, a current-limiting switch is ideal for this. Most existing switchgear has trouble with fuse saving because it is not fast enough and fault currents are too high for the substation circuit breaker to clear before the fuse blows [27]. With fuse blowing or coordination with other downstream protective devices, it is more difficult for a current-limiting device to coordinate. The upstream switch must wait before operating to give a downstream device a chance to clear the fault. This means that the switch must be rated to handle longer-duration fault currents. A fault-limiting device can still limit the current during the 2-11

Status and Needs Assessment of Distribution Switchgear

fault, but it has to let sufficient current to flow for long enough to allow the downstream device to operate. Fault-current limiting may also allow a faster reclose. Fault-current limiting will reduce the energy into the fault arc, so the arc should cool off faster and allow for a faster reclose. A fault arc needs time to cool, or the reclose could retrigger the arc. Whether the arc strikes again is a function of voltage and structure spacings. For 15-kV distribution, minimum de-ionization times are on the order of 11 cycles [28]. Fault-current limiting may reduce that, possibly down to two or three cycles. Such a fast reclose could allow many end-use devices such as computers to ride through the event. The fast reclose would only work with lightning-caused faults because the triggering impulse that causes the voltage breakdown can be complete in less than a millisecond. For a temporary contact from a squirrel or other object, more time is needed for separation from the debris. Having readily available fault-limiting switchgear could fundamentally change the way distribution circuits are protected. Having such gear could lead to more protection schemes based on communication, as communication can allow devices to operate quickly while still coordinating. Utilities may also use more current-limiting fuses, as these are faster than traditional expulsion fuses and may coordinate better with a fault-limiting switch.

Advanced and Future Switchgear Needs


The following are areas where advanced control is needed: Networked primary Large penetration of distributed generation

These scenarios could be handled by existing switchgear with advanced communication and controls. Solid-state switchgear could improve on existing switchgear by making switching so fast that circuit reconfigurations are almost unnoticeable to end-use customers. Current-limiting technologies would help control short circuit currents that could grow as multiple fault-current sources are added to the system (distributed generators or other energy storage devices). Other advanced switchgear has found some (but not widespread) applications on distribution circuits: Fast vacuum transfer switches Solid-state transfer switches [21,22]

Control, Monitoring, and Communication


The control, monitoring and communication systems necessary to support high-speed distribution switchgear has been addressed as part of the Advanced Distribution Automation (ADA) project [29-31]:

2-12

Status and Needs Assessment of Distribution Switchgear

Distribution Substation Control System Development Substation automation is already widespread and many different substation control systems are available. These systems use many different proprietary communication technologies but can be integrated with other systems with appropriate gateways. Research projects should identify the requirements for the substation controller of the future, taking into account the distributed control system functionality of the ADA system. Interface and coordination requirements for the substation control system will be substantial. The research should identify appropriate migration paths from todays substation control technologies to the integrated controls that will be used in the future ADA systems. Intelligent Substation and Feeder Monitoring Intelligent substation and feeder monitoring efforts are already under way. Examples include the Distribution Fault Anticipator (DFA) and intelligent applications being applied in conventional PQ monitoring systems (PQRCM - EPRI Program 3). Asset management systems are also employing intelligent monitoring systems. Intelligent electronic devices (IEDs) are already standard in substations and these can be integrated with substation and feeder monitoring systems to provide more complete information about substation conditions without expensive investments in additional monitors. These devices include smart relays, reclosers, Digital Fault Recorders (DFRs) that are already being used in substations, capacitor bank controllers, voltage regulators, etc. Research should focus on standardizing applications and development of standard interfaces for IEDs to allow convenient integration with monitoring systems. These efforts lead to very convenient demonstrations that can have very fast paybacks. Carolina Power & Light has demonstrated the value of these systems to improving reliability and reducing operating costs. Intelligent Distribution Communications Laying out a communications technology roadmap to support the incremental development and deployment of advanced distribution automation functions involves several tasks: Identifying the core automation functions to be deployed Determining the communications system requirements to support these functions Determining the relative hardware cost of specific enabling components for these functions Determining the software and systems engineering costs for each function Determining dependencies between functions

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Status and Needs Assessment of Distribution Switchgear

Identifying standards that enable efficient, interoperable function implementation Pilot project identification Business case/model development Legacy management

In general, we need to answer the following basic question What information do we need to know at each point in the system to optimally control the distribution system? Answering this question specifically for each power system component involved in the ADA system leads us to a comprehensive set of requirements for data interchange and the key attributes associated with that interchange.

Roles for Advanced Switchgear


The main applications (initially) of solid-state switchgear are expected to be: Substation applicationsThe main advantages of solid-state switchgear are current limiting and speed. Fault-current limiting can allow switchgear to be used in areas where fault current has (or will) grown past the fault-current duty of existing circuit breakers. Fast switches and fault limiting will help reduce stress on distribution transformers and other distribution equipment. Custom applications to large customer servicesSwitchgear to large customers is another area that could be served by solid-state switchgear. They may have specialized needs that could be met by high-tech switchgear, including harmonic reduction, fast transfer switching, and possibly voltage-sag correction. Feeder applicationsThe main advantage of solid-state feeder switchgear is fast operation. Fault-current limiting is not needed as often (fault currents are generally lower). Reliability and flexibility in control and operation will help gain acceptance. Competitive cost is paramount. Industrial applicationsLarge industrial facilities are a big market for medium-voltage switchgear. Such applications could benefit from fault-current limiting for cases with high short-circuit levels. Cost is a major driving force.

The following applications are not expected to be suitable for replacement with solid-state switchgear, mainly for cost reasons: Tap fuses Transformer fuses Capacitor fuses Feeder no load-break switches

2-14

Status and Needs Assessment of Distribution Switchgear

Relay Requirements for Solid State Switchgear in Current Limiting Application


Solid state switchgear will have many features that are significantly different from todays electromechanical circuit breakers. For example it can be expected to have: Ability to clear faults in a time frame of 1/4 cycle from fault inception. Current limiting of high magnitude fault currents. Reclosing as rapidly as 1/2 cycle after clearing a fault. Soft reclosing by limiting current to the circuit until it has demonstrated to have returned to normal integrity

An EPRI report [1] documents the initial investigation that was conducted to understand the impact of current limiting by the solid-state switchgear designs on existing protective devices. This work represented the first step toward understanding what the complex issues are clearly. The next section provides some of the relaying issues and potential concerns that would need to be investigated. Some of the issues raised here will have to be revisited in more details as development of solid-state switchgear application progresses and as potential users provide real world examples for study. Relaying of the Solid-State Switch As a solid state device, the solid state switchgear will have controls that will self protect. Designing the solid state switchgear to respond properly to system abnormal conditions may allow these controls to be integrated with conventional protective and relaying practices for improved performance, thus promoting early acceptance of the new technology. Relaying requirements of the solid state designs and adjustments that will have to be made include: Evaluate the benefit of having all relaying contained in the solid-state switchgear controls versus the concern for a common mode failure. Determine the required minimum characteristics of a fully functional and testable microprocessor relay package integral to the solid-state switchgear. This may be a removable card or leads to a test connector. Quantify the requirements for independent, redundant relays to operate the solid-state switchgear particularly in transmission applications. Determine the range of current limiting settings between solid-state switchgear needs and power system needs to minimize circuit interruptions. Examine the restrictions on dI/dt detection, such as high frequency switching currents cause by capacitor banks.

Evaluate the need and feasibility for an adjustable threshold for current limiting action.

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Status and Needs Assessment of Distribution Switchgear

Examine new features that may be required to gain full advantage of the high-speed reclose capability. Explore testing for circuit integrity before full reclose. Explore testing for and establishing a re-synchronized reclose. Examine feasibility of non-trip current limiting for back-to-back capacitor switching.

Evaluate the impact on existing protective devices with an solid-state switchgear functioning in the fault current limiting mode. Determine at what level fault current limiting will slow fault clearing of devices in adjacent protection zones. Explore how adjacent zone devices will respond to non-sinusoidal currents caused by the SSCL in the fault current limiting mode.

Evaluate the impact of using the inherent single pole tripping capability of the solid-state switchgear. Explore feeder conditions and time windows where expanded possibilities may exist such as lateral fuse saving. Establish limitations on single pole tripping such as downstream three phase transformer connections. Explore how gradual reclosing, if feasible, will impact arc extinction. Estimate the possibility of coordinating rapid re-synchronizing with intentional distributed generation (DG) islands. Evaluate the tie breaker application. Evaluate application of DG on network service.

Evaluate coordination with high speed reclosing capabilities of the solid-state switchgear.

Evaluate coordination/utilization of ultra high-speed fault clearing.

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3 TECHNOLOGY ASSESSMENT OF STATIC


TRANSFER SWITCHES
As discussed in the previous chapter, power electronic based switchgears ("all solid-state" as well as "hybrid" designs) can be used for high speed load transfers, fault current interruption and limiting, fast fault current limiting, tie breaker or solid state transfer switch. This chapter provides an in-depth literature review of the existing and emerging static transfer switchgears for transmission and distribution applications. Each technology is reviewed based on a brief overview of the working principle, proposed circuit topologies and configurations, potential application areas, detailed specifications, possible price ranges, pros and cons of the proposed designs, and most importantly manufacturer's review and maturity of these technologies.

Application of Custom Power Devices


In the past, most of the electromagnetic-based industrial process equipment was fairly tolerant to voltage disturbances such as sags, momentary interruptions, harmonics, spikes, and transients. This is because these equipment was mechanical in nature; electrical energy was converted to mechanical energy and motors were essentially connected directly to the mains. However, with the drive towards higher production costs and increased energy efficiency and reliability in todays highly competitive market, modern industrial and large commercial facilities are incorporating a vast array of semiconductor-based electronic devices. Examples of industrial and commercial facilities that typically employ sensitive, power-electronics-based equipment include pulp and paper, plastics, petrochemical, mining, textiles, machining, rubber, semiconductor, and so on. However, even well maintained and reliable power electronic devices turn out to be very sensitive to PQ variations. Power-line disturbancessuch as voltage sags and momentary interruptionscost electric utility customers billions of dollars every year. At one time, minor power disruptions would have been noticed as a momentary flickering of lights. With todays increased complexity of process automation, even if only a small segment of a process is vulnerable, power disruptions may interrupt the entire automated process. In response to this perceived market need, a broad range of distribution-class, power-conditioning devices, commonly known as custom power devices have been introduced in the market (see Table 3-1). When a power conditioning device is applied in the medium voltage distribution system of an electric utility, its purpose is to protect an entire plant, an entire feeder, or a block of customers or loads. These devices generally have voltage input and/or output ratings between 1 to 32 kV with load ratings in excess of 500 kVA. The concept of applying a power conditioning device at this level is known as custom power

3-1

Technology Assessment of Static Transfer Switches

The concept of custom power is the employment of power electronic or static controllers in medium voltage distribution systems for the purpose of supplying a level of reliability and/or power quality that is needed by electric power customers that are sensitive to power quality variations. Custom power devices, or controllers, are devices that include static switches, inverters, converters, injection transformers, master control modules, and/or energy storage modules that have the ability to perform current interruption and voltage regulation functions in a distribution system to improve reliability and/or power quality. For customers with sensitive loads, achieving the level of power quality and reliability necessary to ensure trouble free operation can prove to be expensive. It is often possible to improve quality through a systematic program that may include the following efforts: Improvements in line insulation and insulation coordination Rerouting of service to selected critical loads on the customer site Improvements to grounding arrangements Installation of passive filters Reprogramming of a sensitive load's controls

However, these measures may still not achieve the desired level of power quality. To gain further improvement, a significant capital investment is required. For the case of voltage sags, this may require a customer to install a UPS system or local generation, both of which may incur high running costs. The burden on a utility would be to install a second feeder to the customer's site from an alternate source. Custom power controllers provide another option, which allow a utility or power provider with the ability to provide a power quality solution on its side of the distribution network at a level that is deemed satisfactory to the customer. In many cases this can provide the most economic solution to establishing the required level of power quality. Custom power devices should be able to react in real time to the state of the distribution system and rapidly adjust to maintain the required level of power quality. The key technology that has made custom power devices possible is the turn-on/turn-off solid state switch. Developments in power electronic technologies including the gate turn-off thyristor (GTO), the insulated gate bipolar transistor (IGBT), and the integrated gate commutated thyristor (IGCT) mean that devices with operational capabilities suitable for high power applications are now available at a cost that makes them economically possible for distribution power levels. Also important to realizing this technology have been the advances made in microcontrollers, signal processors, fiber optic communications and techniques to series-connect solid state switches. However, the customer response to these new lines of products has not been receptive mainly because of their cost. Some of these traditional and emerging technologies, with their approximate price ranges (see Figure 3-1), includes: Reactive power and harmonic compensation Distribution series capacitor, Intellivar pole-mounted, adaptive var compensator (AVC), S&C Electric static condenser (DSTATCOM), active harmonic filter plus reactive compensator, and so on. Voltage sag and momentary interruption protection devices Distribution series compensation devices (for example, DVR, step-dynamic voltage restorer [S-DVR], medium

3-2

Technology Assessment of Static Transfer Switches

voltage dynamic voltage restorer [MVDVR], PQ VR, platform mounted dynamic voltage restorer [PMDVR]), static shunt-off line compensation device, static tap-switching transformer, static transfer switches for distribution voltage classes, and so on
Table 3-1 Summary of Custom Power and Related Customer-Side Power Conditioning Devices Manufacturer ABB Power T&D Company ABB Power T&D Company ABB Power T&D Company American Power Conversion American Power Conversion Cyberex LLC General Electric Inverpower InverPower Mitsubishi Electric Power Products, Inc. Omnion Power Engineering Siemens Power T&D Company Siemens Power T&D Company Siemens Power T&D Company Soft Switching Technologies Soft Switching Technologies S&C Electric S&C Electric Company S&C Electric Company Silicon Power Corporation Silicon Power Corporation Device Name Dynamic Voltage Restorer (DVR) Step-Dynamic Voltage Restorer (S-DVR) Dynamic UPS (DUPS) PQ AC and PQ DC PQ VR and PQ IVR Static Transfer Switch Static Series Voltage Regulator (SSVR) Static Voltage Regulator (SVR) Static Transfer Switch Solid-State Transfer Switch PQ2000 Power Protection System Dynamic Voltage Restorer (DVR) Platform Mounted Dynamic Voltage Restorer (PMDVR) Series Power Conditioner (SIPCON-S) ProDySC MegaDySC PureWave UPS PureWave Voltage Support System PureWave Source Transfer System Subcycle Voltage Regulator ParaDigm Subcycle Transfer Switch Device Category SSC SVR BSES BSES BSES STS SSC SVR STS STS Voltage Application MV MV MV LV MV MV LV/MV MV MV MV Mitigation Capabilities Voltage Voltage Voltage Sag Swell Interruption

BSES SSC SSC

LV MV MV

SSC

LV

SSC SSC BSES SSC STS SVR STS

LV MV LV/MV MV MV MV LV/MV

3-3

Technology Assessment of Static Transfer Switches

Figure 3-1 Approximate Price Ranges for Reactive Power and Harmonic Compensation Devices

3-4

Technology Assessment of Static Transfer Switches

Source Transfer Switch


Source transfer switches have been used throughout the industry for many decades for protecting critical loads from power system disturbances. However, within the last decade the technology available for such devices has broadened the possibilities for applying such devices. Transfer switches enable seamless transfer of energy from a primary source to an alternate source in order to avoid service interruption upon a deficiency in power quality. As a result, power quality problems become transparent to the critical or sensitive customer loads that the SSTS protects. Solid-state switches can now be used for the switching operation, thus decreasing the switching time, and allowing for a more seamless transfer of load from one source to the next. This section focuses on the newer technology available to utilities, specifically the static source transfer switch. In addition, traditional automatic transfer switches, high-speed vacuumswitched transfer systems, and hybrid (both solid-state and electromechanical) systems will be addressed. Device Overview A Source Transfer Switch (STS) is designed to protect critical loads from power system disturbances. This is accomplished by transferring the critical load from a preferred feeder (e.g. faulted) to an alternate feeder (e.g. un-faulted). The STS contains two or more switches that allow a transfer from one source to another. Using ideal switches, a simple diagram of an STS is shown in Figure 3-2. Under normal operation, S1 is closed and S2 is open. When a disturbance is detected on Source 1, S1 opens and S2 closes, thus supplying the load through Source 2.

Figure 3-2 Basic Diagram of a Static Transfer Switch

3-5

Technology Assessment of Static Transfer Switches

Automatic Transfer Switch (ATS) The automatic transfer switch (ATS) has often been used in applications requiring loads to be switched to a backup power source (e.g. alternate feeder, backup generator, etc.) when disturbances, such as outages, occur on the preferred feeder. Typically a rather inexpensive device, the ATS (Figure 3-3) has been used for many years. Unfortunately, due to the nature of the electromechanical switches used in the ATS, a seamless transfer is not obtainable. Typical transfer times can range from a few seconds up to approximately ten seconds. Some work is currently being done that involves incorporating vacuum switches in this type of application to obtain approximate transfer times between 1 and 2 cycles.

Figure 3-3 Automatic Transfer Switch

A list showing various manufacturers of the ATS is provided: ASCO: Florham Park, New Jersey G&W Electric Company: Blue Island, Illinois Russelectric Power Control Systems: Hingham, Massachusetts Westinghouse Electric Corporation: Pittsburgh, Pennsylvania Zenith Controls, Incorporated: Chicago, Illinois

Static Source Transfer Switch (Static STS) The almost seamless transfer of the load from the preferred feeder to the alternate feeder is made possible with the use of solid-state devices. The low voltage static STS has been used in the industry for over 25 years. Due to the ratings associated with these devices, they were limited to applications in the 480 V range up to about 1 MVA. Low voltage static switches have also been standard devices in most UPS systems. Recently, due to the development of higher rated 3-6

Technology Assessment of Static Transfer Switches

thyristors, medium voltage static STS systems have found their way into the industry. These types of devices can range up to 35 kV at 35 MVA, thus allowing the static STS to be a facilitywide solution. The most common solid-state device used in static STS systems is the thyristor, or siliconcontrolled rectifier (SCR). The thyristor was first developed in 1957 by General Electric Research Laboratories and offers one of the highest power-handling capabilities of solid-state devices. While a thyristor switch can be turned on at any time, removing the gate signal will not immediately turn the thyristor off. The thyristor can only turn off when the current through the device goes to zero. There are three ways to achieve a current zero: 1. Natural commutation where the current through reaches the zero crossing on the sinusoid, 2. Forced commutation where the opposite side thyristor switch is turned on when the opposite side voltage is higher. This applies a reverse bias to the lower voltage conducting thyristor switch and forces it off 3. Forced commutation via auxiliary solid-state switching devices, controls, and energy storage components. This method is expensive and very rarely used. The gate-turnoff (GTO) thyristor has also been tested for use in the static STS. Thyristor (SCR) The thyristor is one of the simplest of devices to control. The thyristor only requires two things to operate: forward biasing and a gate current. Applying a positive voltage to VAC forward biases the thyristor. Once the thyristor is forward biased, a gate signal can be applied and the thyristor will begin to conduct. The current path during conduction is from the anode to the cathode. Once the device begins to conduct, it is latched on and the gate signal can be removed. The voltage drop across the thyristor during conduction is typically 2 to 3 V. The thyristor can not be turned off from the gate. Only when the anode to cathode current tries to go negative, under the influence of the circuit in which the thyristor is connected, does the thyristor turn off. Due to the high power ratings that have been available, thyristors have been the preferred solid state device used in static STS systems. The thyristor is a proven device and the relative cost with respect to other devices of similar type (GTO, MCT, etc.) is less. Gate-Turnoff (GTO) Thyristor The gate-turnoff thyristor, often called GTO, is very similar to the thyristor in that it requires a gate signal and forward bias in order to conduct, and ceases to conduct when the anode to cathode current tries to go negative. The difference lies in turning the thyristor off. Unlike the thyristor, which is a line-commutated device, the GTO can be turned off with the gate. During conduction, if a large enough negative gate signal is applied, the device will cease to conduct. The gate signal required to turn the device off is typically one-fifth to one-third the amount of the anode current. 3-7

Technology Assessment of Static Transfer Switches

Unfortunately, due to the nature of the device, such functionality sacrifices the availability of high power ratings. GTOs are currently not available in ratings equivalent to that of the thyristor, and in order to control when the GTO is turned off, a significant amount of power is required. For these reasons, the GTO is not currently being used in stand-alone static solid-state transfer switch (STS) systems, but has worked its way into the design of other protection devices. For example, American Superconductor uses a GTO in the static switch of their SMES devices. Super-GTO Silicon Power is developing the Ultrafast LVSTS (UFLVSTS) that replaces the traditional thyristor with an advanced gate turnoff thyristor the Super-GTO (S-GTO) to allow dramatic increases in switching speed while also allowing for reductions in system size and cost. The SGTO takes an older device technology (the Gate Turn-Off Thyristor, GTO) and improves it by using modern Integrated Chip (IC) technology. A typical 3600V, 200A S-GTO ac switch module is shown in Figure 3-4.

Figure 3-4 3.6KV, 200A S-GTO AC Switch from Silicon Power [32]

High-Speed Mechanical Source Transfer Switch (HSMSTS) Due to the increased cost of the medium voltage static STS, some manufacturers have decided to reduce the cost of the device by replacing the traditional thyristor with a vacuum switch. The objective of reducing the price of the switch is obtained but at the cost of increasing transfer time. Typical transfer times associated with the HSMSTS are on the order of 1 cycles, with no crossover time (paralleling of the two sources). Therefore, this approach is only a viable solution if the particular load in need of protection can withstand a 1 cycle long system disturbance. The efficiency of the device is also somewhat higher than the thyristor-controlled switch, at approximately 99% or greater. Cyberex, Inc. currently offers the HSMSTS as an alternative to the static STS at the medium voltage level. By doing so, the total cost of the device is reduced significantly on the order of 3-8

Technology Assessment of Static Transfer Switches

1/5 to 1/10 the price. ABB also recently unveiled a HSMSTS that offers this same functionality at a similarly reduced price compared to the static STS. Hybrid Source Transfer Switch In a conventional solid state STS, line current flows in the thyristors continuously, causing a geat deal of loss consumption and element heating during normal operation. As a result, relatively large cooling equipment is required which imposes additional operating costs on the user in order to maintain thyristor cooling. It also results in reduced efficiency and lower reliability in the device. Mitsubishi [33] uses an advanced solid-state transfer switching scheme using a novel hybrid switch device, resulting in negligible loss consumption and eliminating the need for cooling equipment. The hybrid switch device essentially consists of a pair of thyristors and a high-speed mechanical parallel switch which has an opening time capability of less than 1 millisecond. Mitsubishi uses a hybrid static switch in parallel with a vacuum switch. Figure 3-5 shows the basic diagram of the hybrid switch unit. The switch unit consists of a pair of anti-paralleled thyristors (thyristor switch or TS) and a parallel switch (PS) connected across the thyristor switch. The thyristor switch consisting of anti-paralleled thyristors allows conduction in either the positive or the negative half cycle of the AC sine wave when a gate triggering signal is provided. The hybrid switch unit is enclosed in an air-sealed container immersed by SF6 gas. This allows the thyristors and their accessories to be completely protected from any environmental contamination. Figure 3-6 illustrates the principle configuration of the hybrid switch to transfer energy between two separate sources. During normal operation, the parallel switch (PS) is a specially designed high-speed switch which conducts the load current in the normal operating state by by-passing the thyristor switch so as to eliminate the conduction losses of the thyristors. When the need for a transfer arises, the vacuum switch opens and the appropriate thyristor is gated. The opening of the vacuum switch produces an arc voltage, which in turn forward biases one of the preferred-side thyristors. A metal oxide gap-less surge arrester (AR) is connected across the thyristor switch in order to protect the thyristors from transient overvoltages. Once this occurs, the load current begins to conduct through the preferred-side static switch. The load is then transferred to the alternate source similar to the standard static STS. Once the alternate-side static switch picks up the load, it is then transferred to the alternate-side vacuum switch. This method increases efficiency to almost 100% and also eliminates the need for cooling devices.

3-9

Technology Assessment of Static Transfer Switches

Figure 3-5 Basic Configuration of Mitsubishi's Hybrid Switch Unit [33-34]

3-10

Technology Assessment of Static Transfer Switches

Figure 3-6 Working Principle of Mitsubishi's Solid State Hybrid Transfer Switch [33-34]

3-11

Technology Assessment of Static Transfer Switches

Power System Requirements Regardless of the specific STS technology that is employed, there are certain criteria that must be met for proper operation of the devices. Independent Feeders In order for an STS to be effective in protecting critical loads from power system disturbances, the two feeders must be independent of one another. For example, a system disturbance on the preferred feeder should not cause the alternate feeder voltage to fall out of desired limits. If this were the case, when a disturbance occurred on the preferred feeder, the STS would be transferring the load to a feeder of poor quality power. This scenario would result in the load being unprotected from the disturbance. The following list describes preferred situations for STS installations. Preferred and alternate feeders fed from different substations This configuration allows the utmost protection. For example, if the preferred feeder substation trips, the alternate feeder will not lose power. One possible source of failure for this configuration is if the transmission system feeding both substations has a disturbance. This situation would obviously result in both feeders experiencing the disturbance. Preferred and alternate feeders fed from different substation transformers If both feeders are fed from the same substation, using different substation transformers offers increased isolation for each feeder. If both feeders are fed from the same transformer, a fault on either feeder could cause the transformer circuit breaker to trip, resulting in a loss of both feeders. Using two transformers allows the transformer feeding the fault to be taken off line without affecting the unfaulted feeder. Different ROW for preferred and alternate feeders Using different ROW (right-of-way) increases the independence of system disturbances on the feeders. Assuming the same ROW was being used, and a fault occurs on the line (downed pole, fallen tree, etc.), the probability of both feeders experiencing the fault increases considerably.

Fault studies are essential in determining the independence of each feeder during system disturbances. These studies are usually available from the utility. Fault data from previous years can also offer insight into the dependence of parallel feeders. Feeder Capacity for Load One obvious requirement of the system is that both feeders have the capacity to supply the entire load individually. For example, if two existing feeders are sharing a load, and an STS is to be installed using each of these feeders as the preferred and alternate sources, it is quite possible that the existing single feeder does not have the capacity to supply the entire load. Also, if the STS transfers the load to a feeder with lacking capacity, the voltage level may drop considerably, resulting in a voltage sag.

3-12

Technology Assessment of Static Transfer Switches

Synchronization Synchronization of the two sources is not required but is recommended. Typical STS systems can transfer the load when the two sources are out of phase, but particular loads may be adversely affected by the phase change (e.g., motor loads). Therefore, it is recommended that both sources be in phase to allow a more seamless transfer of the critical load. Source Availability The STS should not be used in applications where both sources are not available all of the time. For example, a standby generator can not be used as the single alternate source because the generator can not reach full speed in the required time. Startup time for typical diesel generators can take up to 10 to 20 seconds. Static STS Operation A basic static switch consists of two thyristors connected back to back as in Figure 3-7. This type of configuration provides a simple on or off capability for ac signals. During the positivehalf cycle of the voltage signal, SCR1 is forward biased and conducts current (gate signal is applied). During the negative half-cycle, SCR1 is reverse-biased and SCR2 is forward-biased (with gate signal).

Figure 3-7 Basic Configuration for a Static Switch

The above describes the basic operation that allows the switch to transfer a load. By connecting another static switch in a similar manner to an alternate source, the static transfer switch is derived. A single-phase diagram of a typical static transfer switch is shown in Figure 3-8. The three-phase static STS is developed with the addition of four thyristor pairs.

3-13

Technology Assessment of Static Transfer Switches

Figure 3-8 Basic Configuration for a Single-Phase STS

Break-Before-Make or Make-Before-Break Transfers The break-before-make transfer, which is sometimes referred to as open-transition, is a typical capability of the static STS. A true break-before-make transfer means that during transfer, the preferred and alternate sources are never paralleled; each phase of the two sources never feed the load at the same time. This type of transfer allows the current to go to zero in each phase of the preferred-side thyristors before the alternate side begins conducting. All three phases are switched sequentially, 120 apart. Depending upon how the static STS is controlled, it is possible to gate the alternate-side thyristors before the zero-current crossing on the preferred side is reached, thus allowing the alternate side to force the preferred side to commutate (turn off). This transfer is known as a make-before-break transfer. Whether or not the two thyristor pairs produce crosscurrents (e.g., back-feeding a fault) is dependent upon voltage levels and phase and the control algorithm being implemented. Depending upon the control algorithm, this method can result in either all three phases being switched at the same time or each phase being switched separately (sequential switching). Transferring the Load
Single-Phase Transfer

Figure 3-9 through Figure 3-11 demonstrate a successful transfer of load from the preferred feeder to the alternate feeder for a voltage sag on the preferred feeder. Phase A voltage and current is shown for the preferred and alternate feeders along with the resulting voltage on the load side.

3-14

Technology Assessment of Static Transfer Switches

Figure 3-9 Example Waveform of STS Operation: Preferred Source Voltage and Current

Figure 3-10 Example Waveform of STS Operation: Alternate Side Voltage and Current

Figure 3-11 Example Waveform of STS Operation: Load Side Voltage

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Technology Assessment of Static Transfer Switches

Three-Phase Transfer

Figure 3-12 demonstrates a transfer for a balanced three-phase fault on the preferred feeder (Source 1). The line-to-line voltages and line currents are given for the preferred, alternate, and load sides.
Vertical Scale: 25,000 Volts per major division

SOURCE 1 VOLTAGE

3-phase fault applied to Source 1 SOURCE 2 VOLTAGE OUTPUT VOLTAGE

Output Voltage Outof-Specifications for approximately 2.4 msec (approximately 1/8 cycle)

Vertical Scale: 5 Amps per major division

SOURCE 2 CURRENT

SOURCE 1 CURRENT

Output Current Outof-Specifications for approximately 4msec (1/4 cycle) OUTPUT CURRENT

Figure 3-12 Example Three-Phase Transfer

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Technology Assessment of Static Transfer Switches

Transfer Time The total transfer time consists of a detection time, decision time, and switching time. The detection and decision times are reduced using advanced algorithms that characterize the incoming waveforms and calculate the appropriate action to be performed. The total transfer time of the static STS is dependent upon many factors such as the characteristics of the system (voltage levels, phasing, power factor), control algorithm, and the type of disturbance, whether it be a sag, swell, interruption, etc. The typical transfer time for a static STS is around cycle. According to the ITI (CBEMA) 1997 curve typical computer related devices can withstand a total interruption up to 20 ms. The typical static STS transfer time is approximately 8.33 ms (60 Hz system). This translates to the static STS transferring the load from a bad source to a good source well within limits of the ITI curve.

Reducing the Transfer Time

The transfer time can be reduced with the use of commutator circuits. These external circuits use additional storage elements and power electronics to force the thyristor to turn off. This method is usually employed in dc-dc converters and dc-ac converters that use thyristors. Due to the increased complexity, price, and failure possibility, this method is usually not implemented in static STS systems. Another option for decreasing the transfer time is to use a GTO instead of a thyristor. The reason the thyristor-controlled STS has varying transfer times is because the device cannot be readily turned off. The GTO on the other hand offers the functionality of being turned off upon command. This would allow the static STS transfer to be independent of the system. Unfortunately, the GTO has many drawbacks such as (1) range of ratings available are limited, (2) the price for such devices is significantly higher than the standard thyristor, and (3) the gate drive requires significant amounts of power, thus reducing efficiency. For reasons such as these, the GTO is not currently being manufactured with static STS systems. A type of forced commutation is often used that can decrease the time it takes to transfer the load. This is accomplished by firing the appropriate alternate-side thyristor while the preferred side is conducting. When coordinated correctly, the alternate-side thyristor will begin conducting, thus reverse-biasing the corresponding preferred-side thyristor.
Functionality

The typical STS should be capable of performing certain basic functions. These functions basically consist of detecting certain anomalies and successfully performing the respected operation to protect the load or the system supply. The basic scenarios that are of concern are source-side outages, balanced three-phase faults on source, single-line-to-ground faults on source, and load-side faults.

3-17

Technology Assessment of Static Transfer Switches

Source Side Outage The most basic function is the operation due to a source-side outage. This represents a sourceside breaker opening, thus dropping the terminal voltage of the STS to zero. Under such circumstances, the STS should successfully transfer the load from the source with the outage to the alternate source. This capability should be available for both sources. Single-Line-to-Ground Fault on Source The single-line-to-ground fault is one of the most common causes of power system disturbances. During such an event, the STS should successfully transfer the load from the faulted source to the non-faulted source for all three phases. This capability should be available for both sources. Balanced Three-Phase Fault on Source Although not as common as the single-line-to-ground fault, the STS should successfully transfer the load for a fault across all three phases of the preferred source. This capability should also be available for both sources. Load-Side Fault For a load-side fault, the STS should inhibit a transfer to or from either source. By doing so, the fault is not transferred from one source to the other. If the capability is not available, and the fault was allowed to propagate to the other source, both sources could fail. Out-of-Phase Transfers The ideal situation is for both the preferred and alternate feeders to be in phase in order to create an almost seamless transfer. Quite often, keeping the two sources in phase is not possible; therefore the STS must be able to transfer the load with both sources out of phase. Static STS Circuit Topologies Medium voltage static STS systems are usually used to provide facility-wide protection. An entire facility can be transferred to an alternate source without experiencing equipment failure. Medium voltage static STS systems are currently available up to 35 kV at 35 MVA. Two medium voltage static STS topologies are shown Figure 3-13 through Figure 3-14. The difference between Figure 3-13 and Figure 3-14 is that the former is a hybrid design using ultrafast mechanical switches during normal conditions whereas the latter is an all-solid-state design. In the configuration shown in Figure 3-13, one incoming feeder (which is designated Feeder 1) is connected to a preferred source and the other incoming feeder (which is designated Feeder 2) is connected to an alternate source. Two separate switch units (SU1 and SU2) are used for

3-18

Technology Assessment of Static Transfer Switches

this application, where SU1 is used for connecting the load to Feeder 1 and SU2 is used for connecting the load to Feeder 2. During normal operation, SU1 (associated with Feeder 1) is in the on-state mode, and SU2 (associated with Feeder 2) is in the off-state mode as shown in Figure 3.6-a. In SU1, the parallel switch PS1 is closed, and the load current is conducted through PS1 rather than through the thyristors of TS1. This provides an ideal operating condition in the sense of negligible conduction losses. Upon sensing a failure in the preferred power source associated with Feeder 1, the controller provides an opening command signal to the parallel switch PS1 and a gate triggering signal to the thyristor switch TS1 to turn-on, simultaneously. The parallel switch PS1 breaks the bypass circuit within 1 ms and transfers the load current to TS1 as shown in Figure 3.6-b. Immediately after transferring the current to TS1, the gate triggering signal to TS1 is stopped, resulting in the turn-off of TS1 when the current in TS1 reaches the first zero-crossing as shown in Figure 3.6-c. After sensing current zero in Feeder 1, the controller provides a gate triggering signal to thyristor switch 2 (TS2), followed by a closing command signal to parallel switch 2 (PS2). TS2 then beings to conduct the load current from the alternate source immediately after breaking current from Feeder 1 by TS1 as shown in Figure 3.6-c. After completion of the transfer from Feeder 1 to Feeder 2, parallel switch PS2 is closed in the steady state in order to eliminate the losses of TS2 as shown in Figure 3.6-d. The total duration of energy transfer from Feeder 1 to Feeder 2 occurs in less than cycles on a 60 Hz basis, such that the transfer event is transparent to even the most sensitive electrical or electronic loads.

Figure 3-13 Medium Voltage Static STS Topology Used by Mitsubishi

3-19

Technology Assessment of Static Transfer Switches

Figure 3-14 Medium Voltage Static STS Topology Used by Silicon Power

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Technology Assessment of Static Transfer Switches

Figure 3-15 Medium Voltage Static STS Topology Split-Bus Configuration

Figure 3-15 offers the benefit of supplying the load from both feeders during normal operation, but with the added ability of switching to either source if the other voltage source exceeds the programmed limits. During normal operation, Source 1 supplies Load 1 through SS1, while Source 2 supplies Load 2 through SS3. SS2 does not conduct during normal operation. If, for example, the voltage of Source 1 exceeds the programmed limits, SS1 transfers Load 1 to SS2 (Source 2).

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Technology Assessment of Static Transfer Switches

Detailed Specification and Device Review [32-35] The project team initiated discussions with leading manufacturers like Cyberex, InverPower, Mitsubishi, ABB, Silicon Power, S&C, Siemens, GE, Diversified Technologies to gain insights on the technical specifications and ratings of the existing and emerging static transfer switches. The specifications provided in the subsequent sections were obtained from these manufacturers.

3-22

Technology Assessment of Static Transfer Switches

Cyberex Static STS Cyberex LLC was founded in 1968 and has headquarters located in Mentor, Ohio. Cyberex has been manufacturing static transfer switches for 27 years and has installed over 2500 static transfer switches. Cyberex is a subsidiary of the Danaher Corporation.
Table 3-2 Cyberex Static STS Specifications Characteristic Voltage rating BIL rating Continuous Current rating Maximum fault current Efficiency User-specified phase differential window Load power factor Transfer Threshold Solid state devices Number of input sources Manual bypass switch Input Sensing Configuration options Indoor/ outdoor installation Remote control capabilities Remote monitoring capabilities Cooling Operating frequency (Hz) User Interface Environmental requirements 4-pole switching Manual transfer capability Auto-retransfer capability Mean-Time-Before-Failure Battery backup Available in 1-phase or 3-phase Year 2000 compliant Power supply for controls Service life Warranty Typical Price for 15kV-600A w/install Typical Price for 208V-600A w/install Website Contact information Rating 120V, 208V, 480V, 600V, 15kV, 25kV, 35kV 1kV - 150kV 100A - 6000A 22kA - 65kA (symmetrical) 99.8% for medium voltage, 99.5% for low voltage Yes 0.7 - 1.0 for medium voltage, 0.0-1.0 for low voltage user-defined Thyristor for low voltage, vacuum switch for medium voltage 2 or 3 Yes digital, preferred and alternate voltages separately and input line current from preferred and alternate preferred/alternate Both Yes Yes Convection 100-600A, forced-air 800-4000A 50/60 LCD Panel 0-40C, 0-95% humidity optional Yes user selectable 45 years Yes Both Yes preferred, alternate, and load N/A 5 years parts and service $285,000 $50,000 www.cyberex.com (800)-CYBEREX

Note: Price does not include installation of additional feeder.

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Technology Assessment of Static Transfer Switches

InverPower Static STS InverPower Controls, Inc. was founded in 1981 and has headquarters and manufacturing facilities located in Burlington, Ontario, Canada. InverPower has been manufacturing STS systems since 1996.
Table 3-3 InverPower Static STS Specifications Characteristics Voltage rating BIL rating Continuous Current rating Maximum fault current Efficiency User-specified phase differential window Load power factor Transfer Threshold Solid state devices Number of input sources Manual bypass switch Input Sensing Configuration options Indoor/ outdoor installation Remote control capabilities Remote monitoring capabilities Cooling Operating frequency (Hz) User Interface Environmental requirements 4-pole switching Manual transfer capability Auto-retransfer capability Mean-Time-Before-Failure Battery backup Available in 1-phase or 3-phase Year 2000 compliant Power supply for controls Service life Warranty Typical Price for 15kV-600A w/install Typical Price for 208V-600A w/install Website Contact information Rating 15kV and 25kV up to 125kV 300A, 600A 26kA peak asymmetrical. >99.7% Yes 0.0 - 1.0 CBEMA or user-defined Thyristor 2 Yes digital/analog approach for preferred and alternate phase voltages and currents common or split load bus configurations Both Yes Yes forced air 50/60 VFD , LED display based -10 to +40C, 0 to 100% humidity No Yes Yes 10 years Yes 3 Yes preferred and alternate 30 years 1 year parts and service $650,000 www.inverpower.com (905) 639-4693

Note: Price does not include installation of additional feeder.

3-24

Technology Assessment of Static Transfer Switches

Mitsubishi Solid-State Transfer Switch Mitsubishi Electric Power Products, Inc. (MEPPI) is a US corporation with headquarters and manufacturing facilities in Warrendale, Pennsylvania. MEPPI was founded in 1985 as a joint venture between Mitsubishi Electric Corporation and Westinghouse Electric Corporation. Beginning in 1990, MEPPI has installed a total of 16 medium voltage, solid-state switching devices (7.2 kV level) in Japan. Since 1997, Mitsubishi Electric has offered custom power equipment to the U.S.
Table 3-4 Overall System Ratings for Two Different Options

Item 1

Equipment Hybrid Switch

Rating Voltage Current Short Circuit Frequency BIL

Option 1 Option 2 13.8KV 600A 12.5KA 60HZ 95KV 13.8KV 600A 23KA 60HZ 95KV 13.8KV 1200A 23KA 60HZ 95KV 13.8KV 1200A 23KA 60HZ 95KV

By-pass Switch

Voltage Current Short Circuit Closing/Latching BIL

3-25

Technology Assessment of Static Transfer Switches

Table 3-5 Mitsubishi Static STS (Hybrid Unit) General Specifications Characteristics Voltage rating BIL rating Continuous Current rating Maximum fault current Efficiency User-specified phase differential window Load power factor Transfer Threshold Solid state devices Number of input sources Manual bypass switch Input Sensing Configuration options Indoor/ outdoor installation Remote control capabilities Remote monitoring capabilities Cooling Operating frequency (Hz) User Interface Environmental requirements 4-pole switching Manual transfer capability Auto-retransfer capability Mean-Time-Before-Failure Battery backup Available in 1-phase or 3-phase Year 2000 compliant Power supply for controls Service life Warranty Typical Price for 15kV-600A w/install Typical Price for 208V-600A w/install Website Contact information Rating 4kV - 35kV +/-95kV (1.2x50us) between terminals and ground 200A-1200A 12.5 kA (symmetrical) or 25.0 kA (symmetrical) 99.9% Yes (factory set) 0.0 - 1.0 CBEMA or user-defined Thyristor 2 or 3 Yes each phase voltage and current separately split-bus or preferred/alternate Both Yes Yes Natural air cooling 50/60 LCD panel or personal computer 0 to 40C, 0 to 95% humidity No Yes Yes N/A optional 3 Yes user specifiable 15 - 20 years One year after installation standard / multi-year contracts optional. $500,000-$650,000 www.meppi.com (724) 772-2158

Note: Price does not include installation of additional feeder.

3-26

Technology Assessment of Static Transfer Switches

Silicon Power Corporation (SPCO) Static STS Silicon Power Corporation was founded in 1994 from General Electric's Static Power Component Operation. SPCO has its headquarters in Exton, Pennsylvania and has been producing static transfer switches since 1995. Until 1998, SPCO static switches were marketed by PowerDigm Systems. Silicon Power Corporation manufactures two classes of static transfer switches (STS); low voltage class (LV-STS) up to 600VAC and medium voltage class (MVSTS) from 5kV to 38kV. While these switches differ in voltage, they utilize technologies, devices, and control algorithms, which are very similar.
Table 3-6 Voltage/Current Electrical Specifications for Silicon Power's MV-STS Voltage Class Continuous Current (A) Fault Current Withstand (kA) Symmetrical 5 kV 600 1400 15 kV 600 1200 27 kV 400 600 1200 38 kV 400 600 9/18 18 9/18 18 6/12 9/18 18 6/12 12 Asymmetrical 23/45 45 23/45 45 15/30 23/45 45 15/30 30 60 60 95/110 95/110 125 125 125 150/200 150/200 19 19 36 36 60 60 60 80 80 BIL (kV) 60 Hz Withstand (kV)

3-27

Technology Assessment of Static Transfer Switches

Table 3-7 Silicon Power Static STS Detailed Specifications Characteristics Voltage rating BIL rating Continuous Current rating Maximum fault current Efficiency User-specified phase differential window Load power factor Transfer Threshold Solid state devices Number of input sources Manual bypass switch Input Sensing Configuration options Indoor/ outdoor installation Remote control capabilities Remote monitoring capabilities Cooling Operating frequency (Hz) User Interface Environmental requirements 4-pole switching Manual transfer capability Auto-retransfer capability Mean-Time-Before-Failure Battery backup Available in 1-phase or 3-phase Year 2000 compliant Power supply for controls Service life Warranty Typical Price for 15kV-600A w/install Typical Price for 208V-600A w/install Website Contact information Rating 600V, 5kV, 15kV, 27kV, 38kV 2kV - 200kV 400A - 6000A 6-100 kA symmetrical, 15-230 kA asymmetrical. 99.5% Yes 0.0 - 1.0 CBEMA or user-defined Thyristor 2 or 3 Yes preferred and alternate voltages and currents, load side voltage(s) preferred/alternate or split-bus Both Yes Yes forced air 50/60 Keypad and LCD Panel 0 to 40C, preset humidity Optional Yes Yes 10 years Yes 3-phase Yes design dependent 30 years 5 years parts and service $430K - $750K N/A www.siliconpower.com (610) 524-1200

Note: Price does not include installation of additional feeder.

3-28

Technology Assessment of Static Transfer Switches

S&C PureWave Static STS S&C Electric Corporation is a privately owned company that was founded in 1911, with US headquarters and manufacturing facilities located in Chicago, Illinois. S&C Electric's switchgear has currently been installed in four medium voltage static transfer switching systems. Their static transfer switch is still under development with a projected production date of January 1999.
Table 3-8 S&C PureWave Static STS Specifications Characteristics Voltage rating BIL rating Continuous Current rating Maximum fault current Efficiency User-specified phase differential window Load power factor Transfer Threshold Solid state devices Number of input sources Manual bypass switch Input Sensing Configuration options Indoor/ outdoor installation Remote control capabilities Remote monitoring capabilities Cooling Operating frequency (Hz) User Interface Environmental requirements 4-pole switching Manual transfer capability Auto-retransfer capability Mean-Time-Before-Failure Battery backup Available in 1-phase or 3-phase Year 2000 compliant Power supply for controls Service life Warranty Typical Price for 15kV-600A w/install Typical Price for 208V-600A w/install Website Contact information Rating 4.16kV, 13.8 kV, 25 kV, 34.5 kV 60kV - 200kV 300A - 1200A 12.5kA - 40kA symmetrical, 20kA - 64kA asymmetrical >99.5% Yes 0.0 -1.0 CBEMA or user-defined Thyristor 2 Yes digital, phase voltage and current for preferred and alternate, phase voltages of load preferred/alternate or split-bus Both Yes Yes forced air 50/60 LCD -40 to +40C, 0 to 100% humidity No Yes Yes 45 years No 3 Yes preferred and alternate 30 years 2 year on parts N/A www.sandc.com (773)-338-1000

Note: Price does not include installation of additional feeder.

Solid-state transfer switches are the primary application for distribution solid state switchgear at the present time. Although, source transfer switches have been used throughout the industry for 3-29

Technology Assessment of Static Transfer Switches

many decades for protecting critical loads from power system disturbances, within the last decade the technology available for such devices has broadened the possibilities for applying such devices. These designs are used to transfer the power supply of sensitive loads, from a "normal" supply system to "alternate" supply system when a failure is detected in the "normal" supply. This transfer needs to be performed in a very fast way (1/4 cycle) so that the load does not experience any power quality problem This chapter focused on the newer technology available to utilities, specifically the static source transfer switch. An in-depth literature review of the existing and emerging static transfer switchgears for transmission and distribution applications was covered. Each technology was reviewed based on a brief overview of the working principle, proposed circuit topologies and configurations, potential application areas, detailed specifications, possible price ranges, pros and cons of the proposed designs, and most importantly manufacturer's review and maturity of these technologies.

3-30

4 TECHNOLOGY ASSESSMENT OF FAULT


CURRENT LIMITERS
With the growth of the electricity demand, utilities have been upgrading their systems continuously for higher power transfer capability and, consequently, for higher fault current handling capability. A more closely coupled system not only exhibits reduced source impedance values from parallel paths but also an increased number of sources possibly contributing to a fault. There are growing instances in utility distribution and transmission systems wherein the fault current levels are exceeding the interrupting capability of existing substation circuit breakers. This increase in fault current level can cause significant challenges for utilities as it either requires the replacement of large number of substation breakers or the development of some means to limit the fault current. Also, the process of replacing circuit breakers of adequately high fault current interruption capability can become an expensive affair. It has been a long lasting desire of power system operators to have a means of reducing fault current levels while retaining the stiffness and continuous operability of the system. Utilities are seriously re-assessing fault current mitigation methods. They consider emerging new technologies as vital alternatives to existing methods, provided these technologies prove to be the most cost effective means of fault current management. Over the years many R&D programs have investigated on ways to develop technically feasible and economically viable new technologies to build so-called fault current limiters (FCLs). Use of power electronics based solid-state current limiters has triggered a new wave of effort in this direction. Solid state current limiters will enable transmission and distribution entities to effectively address the challenges presented by high available fault current. Recently, there has been a phenomenal increase in R&D activities towards the development of technically feasible and economically viable technologies to design a range of medium voltage and high voltage solid-state switchgears for fault current limiting applications in distribution and transmission. As a part of this effort the project team conducted an in-depth literature review of the existing and emerging power electronics based fault current limiters to understand the existing and emerging fault current limiting technologies, implementation issues that needs to be realized, and understand the application specific attributes that these technologies can offer. While there is a chance that we have not been aware of a specific project, the following R&D activities (besides the list of numerous literatures that were reviewed on this subject) have been carefully studied during the course of this investigation: EPRI's multi-year R&D activity to develop the transmission level fault current limiter (20002005) More details on these activities can be founded from references [1] through [8]. Mitsubishi's ongoing R&D efforts to develop distribution class solid-state breakers (15KV, 600A/1200A) 4-1

Technology Assessment of Fault Current Limiters

Silicon Power Corporation's ongoing efforts (supported by EPRI, Office of Naval Research, and Department of Energy) to investigate the feasibility of using Super-GTO technology for medium and high voltage current limiters of the future [36-37] Siemens efforts to develop a new FACTS based short circuit fault current limiter [38] R&D efforts on other power electronic based fault current limiters (for example superconducting FCLs [8, 39-41]) R&D efforts on other non-power electronic based fault current limiters (for example superconducting FCLs [8,42-45])

Fault Current Limit Characteristics


The behavior of a FCL in the power grid can be characterized by a set of parameters such as those defined in the two references [8, 47]. Figure 4-1 depicts principal waveforms and indicates the three basic operating regions: Normal operation where no limiting action takes place Fault condition during which the FCL is active Recovery period while the FCL resets and regains normal operating condition.

I Normal operation
Fault Inception current p n m in m ax

II Fault condition

III Recovery
Fault Clearing

W ithout FCL fol W ith FCL

time ta td td rated system voltage (Un) ( n ):rated current (peak) m in : minimum initiating current m ax : maximum limited current p : peak (prospective) short circuit current fol : peak value of the follow current ta : action time: from t = 0 until m ax td: fault duration time recovery time tr time between current interruption and return of the FCL to its (initial) low impedance state tr

Figure 4-1 Generalized fault current trace with FCL activated [8]

4-2

Technology Assessment of Fault Current Limiters

The switch turn-off operation without having to interrupt current immediately or to limit the fault current can be delayed until zero crossing. Figure 4-2 shows the schematic circuit diagram and the waveform associated with the switch operation. In this case, the silicon-controlled rectifier is used as the switch.

Vs
Thyrsitor-based Solid-state circuit breaker Sss

Vs

Sss tclear Fault occurs <8.3ms

Figure 4-2 Solid-State Switch Operation without Having to Interrupt Immediately or Fault Current Limiting

If the immediate fault clearing is needed, then the switch needs to be gate-controlled devices such as GTO or IGBT or "Super" GTO. The schematic circuit diagram and the waveform associated with the switch operation are shown in Figure 4-3. The use of GTO or IGBT may allow current limiting, but their conduction voltage drop is too high that it is not practical to use these gate-controlled devices alone in the 100% continuous conducting duty.

Vs
GTO-based Solid-state circuit breaker Sss

Vs

Sss Fault occurs tclear <1ms

Figure 4-3 Using GTO-Based Solid-State Circuit Breaker Allows Instant Fault Current Clearing.

"All Solid-State" Based Designs


The SCR based fault current limiting switch has been proposed in the past [2-8, 47]. Technology options of using other nonlinear impedance methods can also be found in the literature [8]. The most straightforward soli-state fault current limiter (SSFCL) is the solid-state fault current limiting circuit breaker (SSFCL-CB). Figure 4-4 depicts the basic phase module of such a device built by SIEMENS using turn-off devices such as IGBTs or IGCTs. These devices are placed in the DC branch of a full-bridge diode rectifier circuit. Therefore, only one unipolar turn-off device is required for AC line current operation (iLINE). The second device shown in this figure is 4-3

Technology Assessment of Fault Current Limiters

for increased voltage withstand capability and adequate reliability to meet the N-1 failure mode criteria. In addition to the turn-off device there must exist an over voltage protection element such as a metal oxide varistor (MOV) in order to limit the voltage build-up caused by the AC line inductance (or upstream transformer) during the hard turn-off by the IGBT. Typically, such a SSFCL-CB is designed to develop 2-3 times the rated system voltage during turn-off which forces the fault current very rapidly (within 1 ms or less) down to zero. One module may typically develop up to 6 kV and turn-off up to 5.6 kA [39]. A medium voltage SSFCL-CB may consist of several modules connected in series. Similar systems have also been developed by other companies but no economically viable solution could be made available for the commercial market.
i LINE Snubber circuit Balancing resistors

Turn-off devices

Over-voltage protection (MOV)

Figure 4-4 Principle of a solid-state fault current limiting circuit breaker based on turn-off devices

An alternative circuitry for a solid-state fault current limiter (circuit breaker) based on SCR thyristors with commutation circuitry rather than turn-off devices is currently under development for EPRI by Powell Electronics Inc. The initial goal in this program was to develop a 15 kV class device for 1200 A continuous current and prospective fault current levels of 80 kA. Subsequently, a 138 kV class device would be developed. Figure 4-5 shows the schematic circuit diagram of an EPRI's SCR-based fault current limiter. Thyristors S1, S2, S3, and S4 are the main conducting switches. During normal operation, if the current Iline is positive, then S1 and S3 are conducting. If Iline is in negative cycle, then S2 and S4 are conducting. The commutating capacitors C4 and C5 are precharged with the polarity shown in the figure from previous resonant cycle operation. To turn off S1 and S3, thyristors S5, S7, S9, and S10 are fired. The current going through S1 and S3 is decreased down to zero, and the line current shifts to the commutating circuit S5, S7, C4, L1, C5, L2, S9, and S10. The LC resonance swings the voltage from discharge mode back to charge mode, and the capacitor voltages are recharged to the initial polarity. During resonant mode, the MOV voltage rises to its knee point and above the line voltage, which eventually commutates SCRs off. Thus the MOV serves as dual purposes of commutation and transient surge protection.

4-4

Technology Assessment of Fault Current Limiters

During resonance, the capacitor voltage eventually reverses at certain point that makes D1 and D2 conducting. During which period, power resistors R1 and R2 serve as the current limiting function. After resonance, the current limiting function is performed by firing the main SCRs with a large phase-shift angle to provide the required let-through current. After the fault is cleared, the phase-shift angle can be reduced to zero, and the SCRs return to normal operation.

Main thyristors

Iline

Over-voltage protection MOV D2 R2 C5 L2 + S10 S8

D1 R1 S5 S7 C4 L1 + S6

S1

S2

S3

S4

S9

Commutating circuit

Commutating circuit

Figure 4-5 Solid-State Fault Current Limiter Using SCR and Force-Commutating Circuits

Notice that for a regular solid-state switch; only one set of anti-paralleled SCRs is needed. For force-commutated circuit that needs to turn off the device without waiting for zero crossing, two sets of switches are needed. This arrangement indeed increases the conduction loss and decreases the efficiency significantly. The critical component is not the thyristor which could handle significantly higher currents. Instead, the limiting component is the commutating capacitor bank, which must produce more current than the fault at the time of commutation. This commutating capacitor is large, heavy (see Figure 4-6) and represents a noticeable segment of the cost of the entire system. One major drawback for "all-solid state" designs is that thyristor based design will have substantial losses during normal operation serving the load. In EPRI's SCR based fault current limiters the thyristors will have per phase conduction losses of about 14.4KW, and Three Phase Losses = 2V(drop)*6(in series)*1200A*3(phase) = 43.2KW, when carrying the rated current of 1200 amperes. Another problem with this circuit is the component counts and their associated reliability issues. Also, thyristors are a mature and technology. It will be difficult to drive the component cost down even with the wide spread potential market for distribution switchgears.

4-5

Technology Assessment of Fault Current Limiters

Figure 4-6 These capacitor cans are connected in parallel to make up the large commutating capacitors, the largest component in EPRI's SCR Based 15KV, 1200A Solid-State Fault Current Limiter

Westinghouse in association with EPRI developed a prototype (see Figure 4-7) of an "all solidstate" distribution breaker where a SCR-GTO combination is used. As Figure 4-7 suggests, this design consists of two parallel connected circuit branches: a solid-state switch composed of GTOs (and their associated snubber and over-voltage protection metal oxide arresters (ZNOs)) and another solid state switch using SCRs (and their associated components). A unit was built for 13.8KV by series grounding of six GTO modules per phase each one rated for 3000A and 4.5KV. Pairs of anti-parallel connected GTO devices are used in series in the GTO section of the SSB. The GTO switch is the main circuit breaker and it is conducts load current in the steady state. The GTO switch is used to clear source-side faults. It is rated for the maximum normal line current, but not rated for fault currents. It is normally closed and conducts current until the magnitude of the current reaches a pre-set level at which point it opens rapidly interrupting the current flow. To achieve the required SSB voltage for application to the utility 13.8-kV primary distribution voltage, six GTO modules are required in series for each phase. The SCR switch is normally open and has no continuous current rating. Its function is to conduct fault current to facilitate operation of conventional protective devices on the load side of the SSB. For this purpose it is rated for short duration fault surge currents. Its operation is coordinated with the GTO breaker. 4-6

Technology Assessment of Fault Current Limiters

In contrast to the GTOs where the current can be interrupted at any point in the cycle, SCRs can interrupt currents when the current waveform goes to zero. Thyristor breakers, unlike GTO breakers, can be designed to maintain fault current to satisfy the required time-current characteristics for typical overcurrent protection coordination schemes. The SCR section will be able to conduct fault currents for a period of time (10 to 15 cycles), repeatedly. The advantage of the GTO switch is its capability to interrupt current with negligible delay. The advantage of SCR switch compared to GTO switch of the same wafer size is its ability to handle considerably higher currents. SCRs are also available commercially with higher nominal current rating (required for distribution voltages above the 15-kV class). One major drawback for "all-solid state" designs is that thyristor based design will have substantial losses during normal operation serving the load. One problem with EPRI's SCR-GTO configuration is the component counts and their associated reliability issues. Also, thyristors are a mature and technology. It will be difficult to drive the component cost down even with the wide spread potential market for distribution switchgears.

Figure 4-7 Solid-State Breaker Proposed by Westinghouse

4-7

Technology Assessment of Fault Current Limiters

Hybrid Designs
The operating characteristic of solid-state switchgear is primarily dictated by the capabilities of the semiconductor devices used. Voltage and current ratings of the breaker define the number of power semiconductors required and, consequently, the cost and the operating losses of the breaker. Since a closed mechanical contact still exhibits the least amount of conduction losses amongst all switching elements it is most desirable to utilize mechanical contacts in fault current limiters for carrying the continuous operating current. However, mechanical contact systems alone will not develop enough arcing voltage drop to limit fault currents in medium or high voltage systems. One possible solution to archive sufficiently high arcing voltage at least for a medium voltage (distribution) class FCL is the method of a driven arc described in a recent reference [48]. Similar to the technique used in low voltage current limiting circuit breakers the switching arc magnetically driven into a special chamber where it is divided into a large number of sub-arcs. Subsequently, these sub-arcs are driven along metallic rails of high resistivity in order to produce a voltage drop across the switch large enough to commutate the fault current into a parallel resistor. The device, rated 7.2 kV/400 A has been tested successfully in the field for over 2 years in Japan. No information is available on any further developments of this technique, especially not with respect to higher voltage applications. A hybrid solid-state switch that can also perform current limiter function was proposed [41] at the Swiss Federal Institute of Technology and patented by ABB Switzerland. Figure 4-8 shows the hybrid switch that utilizes an ultra fast mechanical switch Sm1 for the normal conducting path, an IGCT-based solid-state switch for a short conducting period to prevent arcing, and a positive-temperature-coefficient (PTC) resistor for current limiting. A 10kV/ 1kA prototype was tested successfully in ABB Switzerland. The main problem with this circuit is the need for a very high-voltage high-current PTC, which requires a substantially stacking effort with the commercially available low-power PTC products. Furthermore, the use of three mechanical switches indicates the problem of economical design issue. In fact, if the mechanical switch Sm1 is fast enough, and the PTC is available, the solid-state switch Sss and its associated mechanical switch Sm2 can be eliminated. A wide range of materials, mostly ceramics, exhibit a highly non-linear positive temperature coefficient (PTC) of the resistivity above room temperature. A sharp increase in resistance can be used for fault current limitation. In fact, PTC resistors are commonly used for fault current limitation in (low power) electronic circuits. To extend this functionality into the medium voltage range for possible applications in power systems was the goal of a project [40] by ABB. The project concluded with the successful testing of a 12 kV class stack of PTC elements (at very low rated current of only 10 A, however)

4-8

Technology Assessment of Fault Current Limiters

Sm1

ultrafast switch mechanical switch Sm2

Sss GTO MOV

PTC

Sm3

load switch

Figure 4-8 A Hybrid Solid-State Switch Using Mechanical Switch for Regular Conducting and PTC for current limiting.

The increase in available fault current levels (due to added distributed generation and increased load) has stressed many transmission and distribution substations to their limits. Also, there are growing instances in utility distribution and transmission systems wherein the fault current levels are exceeding the interrupting capability of existing substation circuit breakers. This increase in fault current level either requires the replacement of large number of substation breakers or the development of some means to limit the fault current. Also, many mechanical circuit breakers are operating much more than originally intended in applications such as capacitor switching. This continual use of mechanical breakers requires intensive maintenance to be performed or periodic replacement of the whole breaker. Environmental problems are also on the horizon with the use of both SF6 gas and oil within mechanical breakers, which may pose long term problems for many utilities. The solid-state switchgear undoubtedly provides a quantum leap compared to traditional mechanical breakers, reclosers, and transfer switches. An in-depth literature review of the existing and emerging power electronics based fault current limiters is provided here. For each technology, the chapter provides a brief overview of the working principle, proposed circuit topologies and configurations, potential application areas, possible price ranges, pros and cons of the proposed designs, and most importantly maturity of these technologies. While a number of candidate technologies have been discussed and reviewed in this chapter, the first generation of solid-state switchgears should use reliable and field-proven technologies. Also, it is desirable that the next generation family of power electronics based switchgears be scalable, be multifunctional, and be capable of being easily tailored to meet specific application requirements without major changes to the baseline design. 4-9

5 DEVICE CHARACTERISTICS FOR SOLID-STATE


SWITCHGEAR
Although the availability of the semiconductor device dictates its development, history indicates that the success of a semiconductor device depends heavily on the success of the application. Examples are power MOSFETs in switching-power-supply applications and IGBTs in variablefrequency drive applications. Blind development of semiconductor devices without a proper guidance of application and circuit design would be a wasteful effort. Failure to bring the MOScontrolled thyristors (MCTs) to the market is the most recent and obvious example. Market demand triggers the need for power electronics equipment such as power supply and adjustablespeed drives, but the right choice and development of semiconductor devices enables the development of power electronic equipment. Recently, new "all-solid" state as well as "hybrid" designs have captured the attention of end users as well as equipment producers. These new designs have resulted from the marriage of modern power electronics and advanced solid-state switching technologies. The solid-state switchgear undoubtedly provides a quantum leap compared to traditional mechanical breakers, reclosers, and transfer switches. Although, the risks involved in the solid-state/hybrid switchgear design is much higher; the upside potentials are also enormous. This chapter provides a detailed review of the state-of-the-art high-power commercial and research power semiconductor device technology (Si and SiC) and their ability to build up solidstate switchgear products of multiple ratings in a family which will have low cost in volume production. Key considerations includes: 1) Technology availability (thyristors, GCT, IGBT, SiC, etc.) 2) Current handling and current interrupting 3) Communication and control considerations 4) Cooling requirements 5) Snubber requirements 6) Space requirements. It also documents the current status of wide-band-gap semiconductor technology and its application areas. Comparisons of the Si technology with wide band-gap technologies in the context of switchgear application area are documented. This chapter also provides a consolidated summary of the key technology metrics, based on DARPAs R&D program, that are required to realize the development of high-voltage semiconductor devices. The subsequent sections will report basic operating principle and recent progress in many highvoltage and high-power Si and SiC switches that are suitable for HV operation. The emerging SiC devices are also introduced. From fundamental device characteristics, key features of these high-power devices related to circuit breaker operation are compared in individual device categories.

5-1

Device Characteristics for Solid-State Switchgear

Solid-State Designs Using HV Power Electronic Switches and Diodes A Key for Success
There has been tremendous advancement in HV power electronics devices in the past several years primarily led by high-power application for traction and FACTS devices. Currently, HV 2 3 power electronic devices high power (gate turn-off thyristors (GTOs) , IGBTs , integrated gate 4 5 commuted thyristors (IGCTs) , emitter turn-off thyristors (ETOs) ) are available at 6-kV level and R&D work is being conducted for achieving the holy grail of higher switching speed, lower losses, and increased reliability using either IGBT, GTO, ETO, IGCT, or other technologies. Moreover, industry and other consortium in the field of SiC and Diamond are also conducting considerable research work. Recently, numerous power devices made using SiC material have exceeded the fundamental capability of Si, leading to an acceleration in the research and development of high voltage SiC devices. The DARPA High Power Electronics Program was also recently established with the goal to revolutionize high power electrical energy control, conversion, and distribution by establishing a new class of solid state power switching transistors employing wide bandgap semiconductor materials. This program as well as other research efforts has demonstrated many of the power device structures previously made in Silicon but with much higher voltage capability. These devices include: SiC BJT, SiC JFET, SiC MOSFET and SiC IGBTs. These high-voltage, high-power power electronics, once they mature, will result in a significant reduction in the overall cost of solid-state switchgear designs. A pictorial representation of the available HV semiconductor devices and their applications are shown in Figure 5-1. The overall technology roadmap characteristics, based on DARPAs R&D program (shown in Figure 5-2), provide a consolidated summary of the key technology metrics that are required to realize the development of high-voltage semiconductor devices. Figure 5-3 outlines the key requirements for these next-generation semiconductor devices. Two EPRI report [12-13] provides details for the next generation semiconductor devices and lays the foundation for EPRIs HV solid-state electronics program.

Gate turn-off thyristors. The capacity of the state-of-the-art GTO device has reached 6 kV and 6000 A.

Insulated gate bipolar transistors. Today, 1.2-kV, 1.7-kV, 2.5-kV, 3.3-kV, and 6.5-kV, 600-A IGBTs are commercially available.
4

Integrated gate commuted thyristors. These have reached the same power level as that of the GTOs. Emitter turn-off thyristors. These have reached the same power level as that of the GTOs.

5-2

Device Characteristics for Solid-State Switchgear

Electric Electric Ship Ship

More MoreElectric Electric Aircraft Aircraft


TRACTION Application Field
Line Voltage:

INDUSTRIAL DRIVES
Line Voltage:

PULSE POWER
Line Voltage:

INTELLIGENT UNIVERSAL TRANSFORMER


Line Voltage:

0.5 - 5 kV DC 0.1-10MVA

2-5 kV AC 0.1 10MVA

>10kV / 10MVA

15-100kVA 15kV Class

All All Electric ElectricCombat Combat Vehicle Vehicle

PE Design

Standard Converter &Inverter

Standard Converter &Inverter/ 3-Level Circuit

Series Connection Pulse Transformer

3-Level/ 5-Level Circuit

Max. Voltage Across Semiconductor

1 6.5 kV

1 6.5 kV

> 6.5 kV

> 4.5 kV

> 4.5kV IGBT Modules

Wide-Band-Gap Based HV Semiconductor Devices

Figure 5-1 Application Trends in High-Voltage, High-Capacity Power Devices [11-13]


Devices 1. Si IGBTs 2. SiC diodes 2004 2005 2006 2007 2008

6.5 kV HV-IGBT available 6.5 kV IGBT matured with cost reduction reduce forward voltage degradation 13 kV PIN diodes available for research further improvement on forward voltage degradation 13 kV diode available 6.5 kV available for sampling 13 kV diode available for sampling 25 kV diode available for sampling 6.5 kV research device available 13 kV MOSFET research device available P-channel MOSFET available 6.5 kV MOSFET technology matured with cost reduction 6.5 kV MOSFET available for sampling 13 kV MOSFET technology matured with cost reduction Thick EPI material resarch starts IGBT research starts P-type wafer available 13 kV IGBT research device available 6.5 kV IGBT available for integration 25 kV IGBT research device available 13 kV IGBT available for system integration

4. SiC power MOSFETs

5. SiC IGBTs

Figure 5-2 HV Device Roadmap and Development Projection Based on DARPAs R&D Program [1013]

5-3

Device Characteristics for Solid-State Switchgear

Properties
Large Band Gap Higher Carrier Mobility High Electrical Conductivity High Thermal Conductivity

Results
High Power Capability High Frequency Low Conduction Drop High Junction Temperature

Switch Requirements
High Input Impedance Low on-state drop Infinite off resistance Fast turn-off & turn-on Ability to withstand high V & I High current density High temperature Capability

Ideal Switch is still a dream !!


Integrated gave driver Minimize conduction loss Zero leakage Minimize switching losses Snubber-less operation Reduced size Reduced heat-sink Less device count

Figure 5-3 Requirements for the Next Generation HV Semiconductor Switches and Diodes

Switching Elements for Solid-State Switchgear


Since we want to provide sub-half cycle current limiting, based on the switching characteristic, there are three major semiconductor device technologies: (1) silicon-controlled rectifier (SCR) with a forced commutation circuit, (2) current-driven gating devices such as gate-turn-off (GTO) and GTO derived thyristor devices, and (3) voltage-driven gating devices such as insulated-gatebipolar-junction-transistor (IGBT). These devices have been all developed at high-voltage levels and can be all used for solid-state circuit breakers. The latter two options offer the advantage of using a simple power circuit and very high speed operation. The current can be switched into an energy absorber in a few micro-seconds. However, these devices have both a lower voltage rating then SCRs have (6500 V vs. 8500 V) and a lower current carrying capability, the result of a more complex structure. The highest voltage level achieved with silicon is a 12-kV SCR. The highest voltage rating for all gate-driven devices is 6.5kV. The technology for silicon (Si) devices is nearly matured, and the rooms for further improvement are limited to packaging and the compromise between switching and conducting characteristics. The emerging wide-bandgap semiconductor devices have been reported at higher than 10kV in its early development stage. The field-effecttransistor (FET) in traditional Si technology has been limited to low-voltage (<600V) applications, but the silicon carbide (SiC) JFET has been reported at 5kV level [49], and MOSFET has been report at 10kV level [50]. The major limitation with SiC device is its material defect, and thus their current rating is always limited to very low level. Recent DARPA highpower electronics (HPE) program has pushed the SiC wafer size from 2 to 3 and continued improving the material defect problem. It is expected in a near future, the SiC devices will have a significant presence in high-voltage applications.

5-4

Device Characteristics for Solid-State Switchgear

Thyristors (Silicon-Controlled Rectifier) Silicon-Controlled Rectifier (SCR) is the oldest conventional power device. The SCR has a simple structure that allows the device to be easily fabricated, and thus the cost is lowest among all high power devices. Shown in Figure 5-4(a), the SCR consists of four alternate P and N layers, i.e., PNPN structure, between anode (A) and cathode (K). Its equivalent circuit is shown in Figure 5-4(b). The operation of SCR can be considered in terms of a pair of tightly coupled transistors, NPN transistor Q1 and PNP transistor Q2. The NPN transistor Q1 can be turned on by a positive current applied to the gate (G). Once Q1 is turned on, Q2 is supplied with a based current that allows Q2 to be turned on. The collector current of Q2 then in turn supplies a current to Q1 base. Thus even if the gate current is removed, Q1 and Q2 remain conducting by mutually supplying the base current to each other with the collector current. This is a well-known latch mechanism. After device is latched on, it cannot be turned off except by applying a negative current to the anode or a negative voltage against anode-to-cathode. Thus SCR is mostly used in line commutation type circuit that it has to wait for the negative voltage through next zero crossing to naturally turn off the device. The voltage drop during turned off is equivalent to a PN-junction diode under forward biased condition. Under reverse biased condition, the SCR is also similar to diode that it can block the reverse voltage.

Cathode (K) Gate (G)


A

p n p

n
Q1

Q2

G K
(c)

Anode (A)
(a) (b)

Figure 5-4 Thyristor: (a) Internal Sturcture; (b) Equivalent Circuit; (c) Schematic Symbol.

Figure 5-4(c) shows the SCR schematic circuit symbol with symbols (A, K, G) representing a three-terminal device. Figure 5.5 shows the photograph of the worlds highest voltage rated semiconductor device a 12kV SCR made by Mitsubishi. The package is a popular hockey puck type that allows heat sinks applied to both sides for effective cooling.

5-5

Device Characteristics for Solid-State Switchgear

Figure 5-5 Photograph of the Worlds Highest Voltage Semiconductor Device Mitsubishi FT1500AU240 [12-13]

Key features of SCR related to circuit breaker operation can be summarized as follows. 1. Highest blocking voltage level: 12kV is available commercially 2. Lowest voltage drop: less than 2V for 6.5kV device and less than 4V for 12kV device 3. High surge current capability: half-cycle surge current is typically 20 times the average current 4. Reverse blocking: an inherent capability similar to diodes 5. Slow turn-off speed: typically larger than 500s for large device, not suitable for highfrequency pulse-width-modulation (PWM) 6. Lack of gate turn-off capability: it relies on the negative voltage with line commutation or an external commutation circuit to force the controlled turn-off 7. Low dv/dt capability: typically less than 2kV/s, thus requires voltage snubber if the device is not turned off at zero crossing 8. Low di/dt capability: typically less than 200A/s, thus requires current snubber if the device is used in voltage source converters Table 5-1 compares three commercially available high-voltage high-power SCRs made by three different companies. The Mitsubishi FT1500AU-240 is rated at 12kV blocking voltage, 1.5kA continuous current capability and 34kA surge current capability. The ABB 5STB18U 6500 has a unique design that contains two anti-paralleled thyristors in one wafer and allows reverse conducting. Thus one single device can be used as a standalone circuit breaker. Its current rating is also high enough for typical circuit breaker rated at 600A and 1200A. The SPCO SPT401 has a diameter size of 125mm and a current rating of 5kA, high enough for most circuit breakers.

Table 5-1. Comparison of three commercially available high-voltage high-power thyristors

Manufacturer Model Reverse blocking

Mitsubishi FT1500AU 240 yes

ABB 5STB18U 6500 yes

SPCO SPT401 125mm Yes

5-6

Device Characteristics for Solid-State Switchgear

Reverse conducting Blocking voltage Average current Iav Surge current Ipk Voltage drop Turn-off speed Critical di/dt Critical dv/dt

no 12kV 1.5kA 34kA 4V at 3kA n.a. 100A/s 2000V/s

yes 6.5kV 1.58kA 31.8kA

No 5kV 5kA 70kA

1.93V at 1.6kA 1.8V at 4kA 800us 250A/s 2000V/s 400s 100A/s 1000V/s

GTO and IGCT The general term for a PNPN latched semiconductor device is normally referred to as the Thyristor. The gate-turn-off thyristor (GTO), shown in Figure 5-6, is an improvement over the SCR that it can be turned off by applying a negative current pulse to the gate, thus it does not need to wait for zero crossing condition. Shown in Figure 5-6(a), the GTO has n+ layer diffused into anode region to allow thinner wafer while maintaining low voltage drop. Its equivalent circuit is shown in Figure 5-6(b). With proper adjustment of current gains for the two transistors Q1 and Q2, the GTO can be turned off by a large negative current to the gate.

Cathode (K) Gate (G) n


+ p+ n

A
G

p n
+ p+ n

n
Q1

Q2

G K

p+
K
(b) (c)

Anode (A)
(a)

Figure 5-6 Gate-Turn-Off thyristor: (a) Internal Structure; (b) Equivalent Circuit; (c) Schematic Circuit Symbol.

The gate current to turn off GTO needs to be excessively high, typically 20% to 100% of the device conducting current. For the device with thousands of amperes, the control becomes a major problem. Thus some GTO derived devices were developed recently. The most wellknown one is the integrated-gate-commutated-thyristor (IGCT) made by ABB. The same technology is called GCT by Mitsubishi. The IGCT is to integrate the gate drive circuit and the device together with very low inductance between the gate drive and the device to accelerate the turn-off process. The cathode current has to be turned off in less than 1s to avoid device going 5-7

Device Characteristics for Solid-State Switchgear

into instability. For a 5kA switching, this turn-off diG/dt corresponds to 5kA/s. The voltage needed for the gate circuit needs to be high, and the gate-circuit inductance needs to be sufficiently low. Thus the integrated package is necessary to achieve effective switching. The GTO can be designed to have reverse-blocking capability, and the device is normally referred to as symmetrical GTO. Similarly, IGCT can adopt respective GTO to become symmetrical IGCT. Figure 5-7(a) shows the photograph of the ABB 5SHY30L6010 unidirectional IGCT. This IGCT is capable of operating at 1.3kA average current and 27.5kA surge current. It does not have reverse blocking capability, thus a series diode is needed for circuit breaker operation. The Mitsubishi GCU15CA-130 GCT, shown in Figure 5-7(b), has the reverse blocking capability, but its average current capability is only 500A. Similar to thyristors, the GTO is also a latch on device that does not have linear operation region. In other words, it is either fully on or fully off. Varying gate voltage or current cannot change the conduction characteristic.

(a)

(b)
Figure 5-7 Photograph of (a) Photograph of ABB 5SHY30L6010 Unidirectional IGCT; (b) ABB 5SHZ08L6000 Reverse Blocking Type IGCT [12-13]

Table 5-2 compares five commercially available GTOs and IGCTs. The highest voltage rating is 6.5kV. The Mitsubishi FG6000AU-120D is rated 6kV, 6kA switching, but its average current rating is only 2kA. The rated current is based on the repetitive turn-off capability, but the average current is based on continuous conduction condition.
Table 5-2 Comparison of commercially available GTO and GTO derives devices

Device type Manufacturer Model Rev. blocking

GTO

GTO

GCT

IGCT

IGCT ABB 5SHZ08F 6000 yes

Mitsubishi ABB FG6000AU- 5SGT30J 120D 6004 No no

Mitsubishi ABB GCU15CA- 5SHY30L 130 6010 Yes no

5-8

Device Characteristics for Solid-State Switchgear

Blocking voltage Rated current Average Iav Surge current Ipk Voltage drop Turn-off speed Critical di/dt Critical dv/dt

6kV 6kA 2kA 40kA 6V at 6kA 30s 500A/s 1kV/s

6kV 1.5kA 1kA 24kA

6.5kV 3kA 500A 8kA

6kV 3kA 1.3kA 27.5kA

6kV 800A 290A 800A 8.4V at 800A

3.5V at 3kA 6V at 800A 3V at 3kA 28s 400A/s 1kV/s n.a. 1kA/s 3kV/s

14s delay n.a. 1kA/s 1kV/s 1kA/s 1kV/s

Emitter Turn-off-Thyristor Similar to IGCT, the emitter-turn-off thyristor (ETO) is being developed to ease the gate drive design for system designers. The device has not been commercially available, and thus is not compared with other commercial GTOs and IGCTs. Figure 5-8 shows the schematic diagram of ETO [51]. It connects low-voltage power MOSFET in series with high-voltage GTO, and turns off the main power-path power MOSFET off before the GTO is turned off to achieve MOS turnoff type operation. There are two sets of power MOSFETs: (1) emitter switch QE and (2) gate switch QG. During the normal forced turn-off operation, QE is turned off and QG is turned on. The GTOs cathode current is totally bypassed via switch QG before the anode voltage begins to rise. In this way, the thyristor latch-up is broken and the ETO is turned off under the hard-driven condition. During the turn-on transient, QE is turned on, and QG is turned off. A high-current pulse is injected into the GTOs gate to reduce the turn-on delay time and to improve the turn-on di/dt rating.
Anode

GTO

Gate1 QG Gate3 QE Gate2

Cathode

Figure 5-8 Schematic circuit diagram of ETO

Compared to the gate power requirement of the GTO, the ETO gate driver requires much lower power. Furthermore, the integrated ETO gate driver provides minimum on-time and off-time 5-9

Device Characteristics for Solid-State Switchgear

control, flexible controller interface, and on-board power supply and current protection. Figure 5-9 shows photograph of a 4kA/4.5kV ETO with integrated gate driver. Depending on the turnoff current requirement, the number of power MOSFETs needed in parallel varies. The picture shows two rings of power MOSFETs are placed on top of the device to serve as QG and QE. A short bus bar connects the device to an integrated gate driver to ensure low inductance in between. Figure 5-10 shows the turn-off voltage and current waveforms at 2-kV, 2-kA condition. The turn-off tail time is long and the associated loss is a concern.

Figure 5-9 Photograph of a 4kA/4.5kV ETO4045A [12-13]

Anode Voltage (500 V/div) Anode Current (500 A/div)

7.5 us

Figure 5-10 Turn-off voltage and current waveforms of the ETO at the bus anode voltage of 2 kV and the anode current of 2 kA.

In order to limit the turn-on di/dt, the inductor snubber and associated diode-resistor components need to be connected in series with the device. For high-current applications, there is a concern with core saturation. Thus air core is typically used. Figure 5-11 shows the structure of a toroidal air core inductor sued for ETO snubber inductor [51].

5-10

Device Characteristics for Solid-State Switchgear

Figure 5-11 Toroidal air core used for the ETO snubber inductor

Experimental turn-on waveform with inductor snubber is shown in Figure 5-12. It can be seen that the di/dt has been limited to 100 A/s. This number is nearly two orders of magnitude less than MOS-gated devices such as power MOSFET and IGBT.
Top Switch Voltage (500 V/DIV) Top Switch Current (100 A/DIV)

Figure 5-12 The di/dt limitation of the top switch current during turn-on period at 1.5kV bus voltage

Super GTO Another GTO derived device is the super-GTO (SGTO), which combines the deep diffused GTO technology with the planar IC technology for high blocking capability and good junction termination. The SGTO is being developed by Silicon Power for pulse-power applications. Figure 5-13 compares the SGTO and standard GTO designs. With better tooling in the modern 2 IC foundry, the SGTO demonstrates 3000 times more cells per given area 160000 cells/cm 2 versus 50 cells/cm . Devices using this technology have demonstrated the ability to turn off over 2000A/cm2 in an inductive without snubbers. The SGTO has been evaluated for pulse power applications at 7kV, 80kA condition using 2 devices in series. Test results indicated a fast rise time of 25kA/s and high peak current of 80kA [52].

5-11

Device Characteristics for Solid-State Switchgear

Similar to ETO, the device has not been commercially available, and thus is not compared with other commercial GTOs and IGCTs. Further evaluation is needed for its potential application in solid-state circuit breakers.

SGTO

GTO

One cell

160,000 cells/cm2

50 cells/cm2

Figure 5-13 Comparison of SGTO and standard 4500V 85mm GTO design.

Key features of GTO related to circuit breaker operation can be summarized as follows. 1. High Blocking voltage level: 6.5kV is available commercially 2. Voltage drop: less than 3V for 6kV device 3. High surge current capability: half-cycle surge current is typically 20 times the average current 4. Possible reverse blocking: some GTO devices have reverse blocking capability, so do the GTO derived devices. However, these devices tend to have smaller current capability and higher voltage drop 5. Acceptable turn-off speed for low switching-frequency operation: typically less than 50s for large device; limited to 1kHz or lower frequency switching. 6. Low dv/dt capability: typically less than 1kV/s, thus requires voltage snubber if the device is not turned off at zero crossing 7. Low di/dt capability: typically less than 1kA/s, thus requires current snubber if the device is used in voltage source converters HV-IGBT Figure 5-14(a) shows the basic structure of an IGBT. Without the bottom p-layer, the structure is similar to a power MOSFET that has an n-channel to connect the current. When a positive voltage is applied in between the gate and the n-channel, the electric field will create a conduction channel between n and n layers. Adding a p-layer on the bottom allows the device to block a higher voltage. The equivalent circuit is shown in Figure 5-14(b). A PNP transistor is formed by the collector p-layer, the internal n-layer, and the body p-layer form. The metal gate 5-12

Device Characteristics for Solid-State Switchgear

along with the insulated oxide layer and the emitter n-layer form a power MOSFET. With power MOSFET shorting the base and collector of the PNP transistor, the voltage drop of the IGBT is the sum of the PNP emitter-base voltage and the MOSFET resistive voltage. Larger silicon area allows smaller resistive drop, but the emitter-base voltage drop tends to be constant. The schematic circuit symbol shown in Figure 5-14(c) indicates that the IGBT is represented by three terminals: collector (C), emitter (E), and gate (G). The punch-through (PT) technology was introduced to show that HV blocking could be achieved with the addition of an n+ buffer along with the local lifetime control, the optimization of pcollector layer and an improved wafer processing [53]. With the improved PT technology, highvoltage IGBT (HV-IGBT) is now available at 3.3 kV, 4.5 kV, and 6.5 kV levels.

Emitter

Metal Gate Oxide SiO2


C IC
C

n p n p

n p
G IMOS IE
G

Collector

(a)

(b)

(c)

Figure 5-14 Insulated Gate Bipolar Transistor (IGBT) Structure and Symbol: (a) Basic IGBT Structure; (b) IGBT Equivalent Circuit and Symbol; (c) Schematic circuit symbol.

IGBT typically has smaller silicon die size. Most commercial IGBTs are packaged in a plastic module with multiple dies in parallel internally. Figure 5-15 shows the photograph of ABB 5SNA0600G650100, 6.5kV, 600A IGBT. Three pairs of (C,E) terminals can be paralleled by external power bus bars.

Figure 5-15 Photograph of ABB 5SNA0600G650100 High-Voltage IGBT.

5-13

Device Characteristics for Solid-State Switchgear

Figure 5-16 shows test results of a Mistubishi 2.5-kV, 1.2-kA HV-IGBT operating at 2-kV and 700-A conditions [54]. The turn-on process is less than 1.5s, and the turn-off process is about 3s. Measured turn-on and turn-off energies are 1.88 J and 0.86 J, respectively. The main reason for high turn-on loss is due to slow diode reverse recovery. If it were the low-voltage IGBT, the diode can be much faster, and the turn-on process can be one order magnitude faster. It is worth of comparing the turn-on di/dt characteristic between HV-IGBT and GTO-derived devices here with the experimental waveforms. With limited FBSOA capability, the GTOderived devices need to be limited to nearly 100 A/s di/dt during turn-on by using external snubbers. Here the HV-IGBT operating without any snubber shows 1500 A/s di/dt during turnon. Such a number would have destroyed most GTO derived devices.
Overshoot current due to diode reverse recovery

Vce (500V/div)
Ic (200 A/div)

Vce (500V/div)

Ic (200 A/div)

Time: 400 ns/div

Time: 400 ns/div

(a)

(b)

Figure 5-16 Voltage and Current Waveforms of a High-Voltage Insulated Gate Bipolar Transistor (HV-IGBT) Switching at 2-kV and 700-A Conditions: (a) turn-on and (b) turn-off.

Table 5-3 compares four commercially available HV-IGBTs. The standard IGBT current rating is the continuous average current, which looks much smaller than what GTO is rated. Its peak current rating, however, can be much higher than its continuous current rating. Most IGBT modules limit its peak current rating to twice the continuous current rating. The ABB 5SNA0600G650100 provides half-pulse peak current rating, which is 10 times the continuous current rating. The IGBTs tend to have higher voltage drop than that of thyristor devices. The 6kV devices typically have a voltage drop of 5V at 600A condition, and the 4.5kV devices have a voltage drop of 3.3V at 900A. The turn-off speed depends on the gated drive resistor value. Smaller gate resistance has less delay time, and the overall turn-off speed is faster. The ABB 5SNA0600G650100 shows 2.5s turn-off time when the gate-drive resistance is 2.7. Other HV-IGBTs using 10 or higher gate resistance have a much slower turn-off speed that is similar to GTO derived devices.

5-14

Device Characteristics for Solid-State Switchgear

Table 5-3 Comparison of Four Commercially Available HV-IGBTs Manufacturer Model Blocking voltage Average current Iav Peak current Ipk Voltage drop Turn-off speed Short ckt current Short ckt period Mitsubishi CM600HG 130H 6.5kV 600A 1.2kA 5V at 600A 10s at Rg=10ohm n.a. n.a. ABB 5SNA 0600 G650100 6.5kV 600A 6kA (8.3ms) 5.4V at 600A 2.5s at Rg=2.7ohm 2.7kA 10 EUPEC Powerex

FZ600 R65KF1 CM900HG -90H 6.5kV 600A 1.2kA 5.3V at 600A 6.5s at Rg=25ohm 3kA n.a. 4.5kV 900A 1.8kA 3.3V at 900A 7.2s at Rg=10ohm n.a. n.a.

Key features of HV-IGBT related to circuit breaker operation can be summarized as follows. 1. High Blocking voltage level: 6.5kV is available commercially 2. Voltage drop: about 5V for 6kV devices and 3.3kV for 4.5kV devices 3. High surge current capability: The half-cycle surge current is typically 10 times the average current 4. Gate drive controllability: The gate resistance affects the turn-off speed significantly. In fact, the gate voltage can also be controlled to drive the device into or out of saturation. 5. No reverse blocking capability: Todays HV-IGBT does not have reverse blocking capability. Although it is possible to design with reverse blocking, the voltage drop may be compromised. 6. Fast turn-off speed that can be controlled by the gate resistance: typically less than 10s turnoff for large device; and the frequency switching can increased to as much as 10kHz. 7. High dv/dt capability: there is no need for the voltage snubber if the device is not turned off at zero crossing 8. High di/dt capability: there is no need for the current snubber if the device is used in voltage source converters Wide Band-gap Silicon Carbide Devices Presently, almost all of the power electronics converter systems used silicon (Si)-based power semiconductor switches. However, SiC with superior properties compared to Si is a good candidate to be used in the next generation of power devices, especially for high-voltage applications. The emergence of SiC-based power semiconductor switches, with superior features compared with the Si-based switches, could bring in substantial improvement in the performance of power electronic converter systems.

5-15

Device Characteristics for Solid-State Switchgear

SiC has a unique combination of a high critical electrical breakdown field, good majority carrier transport, long minority carrier lifetimes due to its indirect bandgap, and high thermal conductivity. These attributes combine to give SiC the potential to significantly exceed the current-carrying density, temperature and voltage-blocking capabilities of existing silicon power semiconductor devices (Figure 5-17)

Figure 5-17 SiC Potential for Wide Bandgap High Power Electronics

Materials that have received the most interest for the development of power semiconductors include, but are not limited to gallium-arsenide (GaAs), gallium-nitride (GaN), aluminum-nitride (AlN), silicon carbide (SiC), and diamond. Three types of SiC polytypes have been studied: 3C, 4H, and 6H. The 3C-form has a cubic lattice structure while the others are hexagonal. The number indicates how many basic layers of 0.251 nm spacing from the elementary cell. The cubic form has isotropic porperties , whereas the hexagonal forms have anisotropic properties. This means that material properties like carrier mobility and electrical permittivity take the form of tensors, and the carrier drift velocity and the dielectric polarization may take up directions that differ from that of the applied electric field. Table 5-4 compares physical properties of silicon and wide band-gap materials [41].

Table 5-4 Key Properties of Wide-Band Gap Semiconductor Materials

5-16

Device Characteristics for Solid-State Switchgear

Si Band Gap (eV) Electron Saturation Velocity (107cm/s) Dielectric Constant Breakdown Field (MV/cm) Thermal Conductivity (W/cm/K) Electron Mobility n (cm2/Vs) Electron Mobility p (cm2/Vs) 1.12 1 11.8 0.3 1.5 1350 470

GaAs 1.42 2 12.9 0.4 0.46 8500 90

GaN 3.4 2.5 10 3.3 1.3 900 150

3C-SiC 2.2 2.5 9.7 1.5 5 100 50

6H-SiC 2.9 2 10 2.2 5.0 460 50

4H-SiC 3.2 2.7 9.7 3.0 4.9 800 120

Diamond 5.5 2.7 5.5 5.6 22 1900 1200

Some of these advantages compared with Si-based power devices are as follows: SiC unipolar devices are thinner and have lower on resistances. At low breakdown voltages (~50 V), these devices have specific on resistances of 1.12 , around 100 times less than those of their Si counterparts. At higher breakdown voltages (~5000 V), the on resistance goes up to 29.5 m, which is still 300 times less than that of the comparable Si devices. With lower on resistance, SiC power devices have lower conduction losses; therefore, the converters have higher overall efficiency. SiC-based power devices have higher breakdown voltages because of their higher electric breakdown field; for example, Si Schottky diodes are commercially available at voltages lower than 300 V, but the first commercial SiC Schottky diodes are already rated at 600 V. SiC has a higher thermal conductivity (4.9 W/cm K for SiC and 1.5 W/cm K for Si), and SiC power devices have a lower junction-to-case thermal resistance, Rth-jc (0.02K/W for SiC and 0.06 K/W for Si). Therefore, temperature increase of the device is slower. SiC devices can operate at high temperatures. SiC device operation at up to 600C (1112F) is mentioned in the literature [1]. Si devices, on the other hand, can operate at a maximum junction temperature of only 150C (302F). SiC is extremely radiation hard; that is, radiation does not degrade the electronic properties of SiC. Forward and reverse characteristics of SiC power devices vary only slightly with temperature and time; therefore, they are more reliable. SiC-based bipolar devices have excellent reverse-recovery characteristics. With less reverse-recovery current, the switching losses and EMI are reduced, and there is less or no need for snubbers. Because of low switching losses, SiC-based devices can operate at higher frequencies (>20 kHz), which is not possible with Si-based devices in power levels of more than a few tens of kilowatts.

SiC power MOSFET has been considered as the excellent candidate for high-voltage applications device because the early devices have demonstrated impressive current density 5-17

Device Characteristics for Solid-State Switchgear

figure [55-58]. The blocking voltage level of the SiC power MOSFET was reported at 10 kV. Further development is needed in larger die size for higher current handling. Cree is clearly the leading manufacturer in making high-voltage SiC based power MOSFET. Figure 5-18(a) shows the cross-sectional structure of a typical power MOSFET. There is an oxide layer separating the gate and the drain-source channel. The electric field applied to the gate allows the channel to be open and thus the current to be flowed through. Since there is no junction between drain and source, the voltage drop is directly proportional to the on-resistance, a feature same as JFET. The p-body is typically connected to the source, and thus creating an anti-paralleled diode. The external connection sees three terminals: drain (D), source (S), and gate (G). Figure 5-18(b) shows the symbol with inclusion of the body diode. The body diode across source and drain is normally very slow reverse recovery, which prevents the power MOSFET being widely used in high power inverter applications. The initial development of SiC based power MOSFET, however, is not known for its body diode reverse recovery characteristic and needs additional further test.
S n p+ G oxide n p+

D B G S
(b)

n epitaxial n+ substrate D

(a)

Figure 5-18Cross-sectional structure of power MOSFET

SiC MOSFET Static Characteristic The static characteristic of SiC MOSFET is similar to SiC JFET. The device reported by R. Singh with 3mm 3mm 4H-SiC ACCUFET device has voltage and current ratings of 385-V and 20-A with 15 m-cm2 current density. Figure 5-19 shows the static voltage and current characteristic of the 385V SiC based power MOSFET at different gate voltages. It can seen that the gate-to-source voltage is now at 20 V for full current rather than a typical 10-V seen in Si MOSFETs. The threshold voltage is also much higher now. The Si-based MOSFET has a threshold voltage less than 5V, but the SiC-based MOSFET appears to have a threshold voltage higher than 10V.

5-18

Device Characteristics for Solid-State Switchgear

20 15

VGS = 20 VGS = 15 VGS = 10 VGS = 5


0 2 4 6 8 10 12 14 16 18 20

ID (A)

10 5 0

VDS (V)
Figure 5-19 Static voltage and current characteristic of a 385V SiC MOSFET.

A recently reported 10-kV, 2A 4H-SiC based power MOSFET is reported [55]. The voltage level is clearly what IUT and utility needs. The current level is also close to IUT requirement. Figure 5-20 shows the static conduction characteristic of the 10-kV, 2A power MOSFET. Similar to the 385V device, this device needs a high gate voltage to turn on. The gate voltage of 18 to 20V is required for sufficiently low conduction voltage drop. Consider an 8V drop for 10kV bus, the conduction loss is less than 0.1%. Figure 5-21 shows the static reverse blocking characteristic of the 10kV, 2A SiC power MOSFET. Under zero gate voltage condition, the device clearly blocks 10kV with less than 0.1mA leakage current. Under Vgs = 3V, the blocking capability is deteriorated, but remains about 0.1mA at 6kV.
5 4.5 4
Area = 0.048 cm 25 C
2

VG = +20 V 18 V 16 V 14 V

Drain Current (A)

3.5 3 2.5 2 1.5 1 0.5 0 0

200 W/cm

12 V 10 V 8V 6V 4V

10

20

30

40

Drain-Source Voltage (V)


Figure 5-20 Static Voltage and Current Conduction Characteristic of a newly Developed SiC MOSFET Rated 10kV, 2A.

5-19

Device Characteristics for Solid-State Switchgear

1.8E-04 1.6E-04

Area = 0.048 cm

Drain Current (A)

1.4E-04 1.2E-04 1.0E-04 8.0E-05 6.0E-05 4.0E-05 2.0E-05 0.0E+00 0 2000 4000 6000 8000 10000 12000 Vgs Vgs Vgs Vgs Vgs Vgs Vgs = = = = = = = 0 V #2 1V 2V 2.25 V 2.5 V 2.75 V 3V

1mA/cm2

Drain Voltage (V)


Figure 5-21 Static Reverse Blocking Characteristic of the 10kV, 2A SiC Power MOSFET.

SiC MOSFET Dynamic Characteristic The advantage of power MOSFET over IGBT is its switching speed. The MOSFET does not incur tail current during turn off, thus the turn-off speed is very fast, and the turn-off loss is very small as compared to IGBT. Figure 5-22 shows the above described 10-kV, 2A SiC power MOSFET gate drive voltage during turn-off condition. The gate resistance significantly affects the gate voltage discharge rate, which subsequently will affect the turn-off delay and turn-off current fall time.
25 25

Gate Voltage (V)

20 20
G a te V o lta g e (V )

15 15
10 10

55

101 25 48 Rg = 12
0 0.2 0.4 0.6 Time (s) 0.8 1.0

00 5 -5

Figure 5-22 SiC MOSFET Gate Drive Voltage During Turn-off.

5-20

Device Characteristics for Solid-State Switchgear

Figure 5-23 and Figure 5-24 show the SiC power MOSFET drain-source voltage and drain current under turn-off conditions, respectively. The current fall time and thus the turn-off loss is much reduced with small gate resistance. Depends on turn-off dv/dt limit, which is typically due to the load not the device itself, the turn-off speed or gate resistance can be determined. The dv/dt in the previous HV IGBT case was seen at 20kV/s range at 2kV, 30A condition. Here the SiC HV power MOSFET shows about 30kV/s range at 5kV, 3A condition. The switching speed of SiC power MOSFET is apparently much faster, and the switching loss is expected to be much lower, but the switching speed impact to the load remains unknown. Todays industrial drive operates at 4 to 8kV/s, and the motor bearing failure has been the major issue. With nearly one order of magnitude increase, the dv/dt impact to the inductor and capacitor will need additional attention.
6000 6000

Device Voltage (V)

5000 5000 4000 4000 3000 3000

D rain Voltage (V)

Rg = 12 25 48 101

2000 2000
1000 1000 0 0

-1000 1000

0.2

0.4 0.6 Time (s)

0.8

1.0

Figure 5-23 Turn-off Device Voltage for an SiC 10kV, 2A MOSFET


4.0 4.0

Device Current (A)

Drain Current (A)

3.0 3.0

101 48 25

2.0 2.0

1.0 1.0 Rg = 12
0.0 0.0

1.0 -1.0
0.E+00 0 2.E-07 0.2 4.E-07 0.4

Time (s) Time (s)

6.E-07 0.6

8.E-07 0.8

1.E-06 1.0

Figure 5-24 Turn-off Device current for an SiC 10kV, 2A MOSFET

5-21

Device Characteristics for Solid-State Switchgear

Figure 5-25 shows the reverse-biased safe operating area of the 10kV, 2A SiC MOSFET. Under 2.5 over-current condition, the device can withstand 60% of the breakdown voltage. The device apparently has substantial over-current capability if the bus voltage is lower than the rated voltage.
6 5 7000 6000 5000 4000 3000 2000 1000 0 -1000 1.0E-07 2.0E-07 3.0E-07 4.0E-07

4 3 2 1 0 -1 -2 0.0E+00

Time [s]
Figure 5-25 RBSOA Characteristic of 10kV, 2A SiC MOSFET

High-Voltage High-Power SiC Devices The SiC device at its initial development stage has demonstrated superior performance in voltage blocking capability even with the power MOSFET, which is normally limited to 300V in Si devices. Now with 10kV blocking voltage, the 30 performance improvement is a major leapfrog jump. To further increase the power density, the development needs to move to SiC IGBT or SiC thyristors. Currently small-size SiC GTO has been under development for pulse power applications. The reported 2mm2mm GTO can be switched at a maximum current of 1.4kA with a rise time of 2.4kA/s [59]. The larger size 4mm4mm GTO was successfully tested at 850V, 3.1kA, and 2 3.9kA/s [60]. Figure 5-26 shows the 4mm SiC GTO current density and voltage drop characteristic. The wide band-gap device has a higher inherent voltage drop. At low current condition, the voltage drop is between 2 and 3 V, depending on the temperature condition. At 100A/cm2, which is similar to the current density of the matured Si devices, the voltage drop remains below 3.4V. The current density exceeds 1kA/cm2 at 5V drop condition.

5-22

Drain Voltage [V]

Drain Current [A]

60 % of BV @ 2.5 X Current

Device Characteristics for Solid-State Switchgear

Figure 5-26 4mm2 SiC GTO Current Density and Voltage Drop Characteristic.

The SiC IGBT has not been developed because it requires a p-type wafer, which is not available today. However, the SiC IGBT is considered very promising for next generation high-power electronics applications. There are some conceptual designs that show different internal structure from the traditional Si IGBT. As shown in Figure 5-27, the SiC IGBT design has a JFET implant near the P-body and gate area for improvement of current density.
Gate Emitter n+ p+ p n+ p+ JFET implant nn+ p+ Collector

Figure 5-27 SiC IGBT Internal Structure.

5-23

Device Characteristics for Solid-State Switchgear

DARPA High Power Electronics Program Roadmap There exists a critical need for solid state switching devices and integrated circuits that can meet the high-current, high-voltage, and speed requirements of electric components and sub-systems in emerging military applications. The Defense Advanced Research Projects Agency (DARPA) under Department of Defense wide bandgap semiconductor technology (WBST) high power electronics (HPE) program started in 2002. The objective of the program is to revolutionize high power electrical energy control, conversion, and distribution by establishing a new class of solid state power switching transistors employing wide bandgap semiconductor materials. The HPE program is investigating novel technical approaches to enable high-power solid-state electronics, with the main focus being on power electronics technologies for 10 kV class devices. Applications include power distribution and electro-magnetics weapons in future hybrid-electric combat vehicles, naval ship propulsion, and electric aircraft. The leading candidate semiconductor material for 10 kV class high power devices and circuits is SiC in the 4H polytype. Research in HPE is concentrated in the following technical areas: (1) 4H SiC semiconductor materials and processes, (2) high-power device structures, or (3) high power integrated circuit technology. Although SiC has these advantages compared with Si, the present disadvantages limit its widespread use. Although the basic properties of the wide band-gap semiconductor materials can be used to show the figure of merits for making power semiconductors, the degree of difficulty of making them available is indeed the most crucial factor for us to consider. For solid-state switch development, possible use of the wide band gap materials can be summarized as follows. Silicon material is simple to make, and with 50 years experience of making them, the Si power semiconductor devices have approached their theoretical performance limit. The wide band-gap semiconductors, especially the well-known silicon carbide (SiC) and Galliom Nitride (GaN), are showing significant better material properties. With 10 times blocking voltage capability, SiC can be easily made to have blocking voltage level higher than 10 kV or 20 kV for immediate application at thr distribution voltage level. However, the material defect and degree of difficulty of making them are high, and thus the SiC devices are not yet made available for the voltage level we need. GaN and diamond are much more difficult material to process than SiC. Theoretically, GaN and diamond have better material properties than SiC. However, the degree of difficulty of using even SiC is several orders of magnitude higher than that of making Si devices. SiC devices have not been mass-produced. Currently, only alpha-version devices are available for high-voltage applications, and some beta-version diodes are available for low-voltage applications. SiC Schottky diodes, showing zero reverse-recovery characteristics, are available in beta version by Cree and in quantity by Infineon. The quantity availability is only up to 600-V rating. How long the technology will take to mature is difficult to predict, and with this uncertainty, it use is limited.

5-24

Device Characteristics for Solid-State Switchgear

How long the technology can be matured is difficult to predict and with this uncertainty it is prudent to move with 1st generation solid-state breakers/reclosures/currentlimiters development using HV Si technology (GTO, IGBT, "Super" GTO) while closely following the development of wide band gap technologies.

Summary
This chapter reviews the state-of-the-art high-power commercial and research Si devices. The emerging SiC devices are also introduced. From fundamental device characteristics, key features of these high-power devices related to circuit breaker operation were compared in individual device categories. Table 5-5 compares basic features of different commercially available devices. Although the SGTO is listed here, it is more of a research device but close to commercially available. The other devices can all be ordered through their company websites or catalogs.
Table 5-5 Overall Comparison of Different Commercially Available Devices

Device type Manufacturer Model Rev. blocking

SCR

Dual SCR

GTO

IGCT

Sym. IGCT SGTO Mitsubishi SPCO

HV-IGBT ABB

Mitsubishi ABB

Mitsubishi ABB

FT1500AU 5STB18UT 5SGT30J -240D 6500 6004 Yes Yes Yes 6.5kV 2.48kA 1.58kA 31.8kA 1.93V at 1.6kA 800s 250A/s 2kV/s No No 6kV 6kA 2kA 40kA

5SHY30L GCU15CA 5SNA 0060 SGTO-24 6010 -130 G650100 No No 6kV 3kA 1.3kA 27.5kA Yes No 6.5kV 3kA 500A 8kA No No 6kV 6kA n.a. 55kA No No 6.5kV 600A 600A 6kA 5.4V at 600A 2.5s

Rev. conducting No Blocking voltage 12kV Rated current 2.35kA

Average current 1.5kA Surge current Voltage drop Turn-off speed Critical di/dt Critical dv/dt 34kA 4V at 3kA n.a. 100A/s 2kV/s

6V at 6kA 3V at 3kA 6V at 800A 2V at 3kA 30s 500A/s 1kV/s 14s delay n.a. 1kA/s 1kV/s 1kA/s 3kV/s n.a.

600kA/s Not limited n.a. Not limited

The distinct features of each device category for solid-state switchgears can be summarized as follows: The SCR device voltage level has been pushed to 12kV. For 15kV circuit breaker, the number of stacking devices is only 2. For all gate-controlled devices, the maximum voltage level is 6.5kV, and the number of stacking devices is 4. Less number of stacking devices is desired for better voltage balancing. For pure solid-state switch, the voltage drop and reverse 5-25

Device Characteristics for Solid-State Switchgear

blocking are the most important factors. In this case, the SCR is the best choice among all different devices. However, lack of gate turn-off capability makes SCR difficult to be used in fault current limiting applications. For pure solid-state switch, the voltage drop and reverse blocking are the most important factors. In this case, the SCR is the best choice among all different devices. Lack of gate turn-off capability makes SCR difficult to be used in fault current limiting applications. For hybrid switch where the solid state switch conducts a limited period, then the switching speed and snubberless operation become the most important factors. In this case HV-IGBT is the best choice. From the numbers given by the manufacturer, SGTO seems to be a good candidate for the hybrid switch. For availability of high-voltage high-power gate-controlled devices with hybrid configuration, GTO and GTO derived devices can also be the candidate. For availability of high-voltage high-power gate-controlled devices with hybrid configuration, GTO and GTO derived devices can be the candidate. The voltage rating of wide band-gap SiC devices has shown very promising in its early stage development. However, the material defects will limit the current rating at least for sometime until the material problem is solved. Continuing monitoring of SiC material and device development is necessary. In terms of when to really cut in for evaluating SiC devices for solid-state switchgear application, it is difficult to say. Based on the DARPA schedule of DARPA HPE Program, it is possible to start evaluating SiC in 4 to 5 years for high-voltage high-power solid-state switchgear applications.

5-26

6 PROPOSED DESIGN AND SPECIFICATIONS FOR


FAMILY OF SOLID-STATE SWITCHGEAR
The increase in available fault current levels (due to added distributed generation and increased load) has stressed many transmission and distribution substations to their limits. Also, there are growing instances in utility distribution and transmission systems wherein the fault current levels are exceeding the interrupting capability of existing substation circuit breakers. This increase in fault current level either requires the replacement of large number of substation breakers or the development of some means to limit the fault current. Also, many mechanical circuit breakers are operating much more than originally intended in applications such as capacitor switching. This continual use of mechanical breakers requires intensive maintenance to be performed or periodic replacement of the whole breaker. Environmental problems are also on the horizon with the use of both SF6 gas and oil within mechanical breakers, which may pose long term problems for many utilities. The first, the most important factor that we have to apply to the power system today is to make it a digitally controlled system. We have a digital economy and we're still trying to provide power to it through a mechanical design system that was designed over 50 years ago. Its a marvelous system, but we've been effectively borrowing against the future to pay for the present, and the future has caught up with us; we need to build the system to serve the digital society of the 21st century. While the potential benefits of power electronics based switchgear designs ("all solid-state" as well as "hybrid" designs) have long been apparent, potential high production costs have curtailed development efforts. Advances in high power solid-state components now make possible solidstate switchgear at a reasonable cost. Key benefits include: Rapid Load Transfer Capabilities Solid-state transfer switches are the primary application for distribution solid state switchgear at the present time. These designs are used to transfer the power supply of sensitive loads, from a "normal" supply system to "alternate" supply system when a failure is detected in the "normal" supply. This transfer needs to be performed in a very fast way (1/4 cycle) so that the load does not experience any power quality problem Circuit sectionalizing and reconfiguration Solid state switches have the potential to eliminate momentary interruptions for the great majority of customers on distribution systems when a fault occurs. Solid state switches for reconfiguring systems can also allow for optimizing performance through reconfiguration without imposing momentary interruptions on customers. Rapid Fault Current Solution Deployment Solid state switchgear designs will enable transmission and distribution entities to effectively deal with pressures to add new 6-1

Proposed design and Specifications for Family of Solid-State SwitchGear

transmission capacity, provide open access for distributed and aggregate generation and deal with the challenges presented by new fault current sources. Rapid Fault Isolation and Aid Power Quality Improvements With the flexibility of power electronic switching, the solid state switchgear will achieve fault isolation and provide better network protection and take care of most of the distribution system situations that result in voltage sags, swells, and power outages. Fast isolation of faulted sections of the minimum size will significantly contribute to improved reliability performance characteristics (SAIDI System Average Interruption Duration Index and SAIFI - System Average Interruption Frequency Index). Instantaneous Current Limiting Solid state switchgear designs will provide instantaneous (sub-cycle) current limiting. Solid State switchgear will alleviate the short circuit condition in both downstream and upstream devices by limiting fault currents coming from the sources of high short circuit capacity. Faster Fault Clearing and Shorten Recloser Interval - Utilities may wish to clear faults more quickly than current circuit breakers allow Mitigating the Effects of New Generation Within Distribution System New generation will increase the available fault current of the network and may result in existing equipment not being adequately rated to handle the new ratings. Upgrading the system to accommodate the new fault current ratings may be expensive and create excessively high prices and barriers to new generation. The solid state switchgear designs with current limiting capabilities can be used to mitigate this situation. Interfaces with distributed generators Solid state switches can facilitate implementation of local islanding schemes for distributed generators and allow connection and disconnection without concern for transients Repeated Operations With High Reliability and Without Wear-Out High fault currents are known to be a factor in reducing transformer life, so it is expected that an advantage from the use of a current limiting breaker will be longer life with higher reliability for nearby transformers Curtail Mechanical Wear and Tear in Equipment Equipment in the fault current path will not experience the high asymmetrical and symmetrical fault currents that would be possible without the solid state switchgear Soft Start Capability Limit the inrush current for capacitive loads, by gradually phasing in the switching device rather than making an abrupt transition from an open to a closed position Reduce Switching Surges Solid state switches can prevent transient voltages during capacitor switching and will allow capacitors to be switched in and out as often as needed. The result is better control of VAR flows, voltage, and flicker on the distribution system without causing unacceptable transient voltages Standardization Implementing standardized designs and provide alternative to large scale power system breaker upgrades. There are fixed and variable costs in maintaining an inventory of distribution switchgears. One of the primary functional specifications for the solid state switchgear designs is standardization of product classes compared to the existing

6-2

Proposed design and Specifications for Family of Solid-State SwitchGear

practice based on multiple voltages and current rating. Realization of this primary functional specification should result in significant reduction in inventory cost. It is possible to significantly reduce inventory costs by introducing standardized switchgear designs. Avoid the Use Traditional (series reactor) Fault Current Limiting Solutions Improved operations and asset management The operations-and-maintenance (O&M) cost reduction are potentially achievable with solid state switchgears through significant reduction of size and weight and improved communication capabilities by adopting the IEC 61850 communication architecture Minimize Environmental Impact By minimizing the need for SF6 breakers, the new solid state switchgear designs will help diminish the environmental impacts of greenhouse gas and arced oil associated with breakers Other Advanced Distribution Automation Functions Advanced distribution automation provides opportunities to develop new applications for condition monitoring and asset management purposes. One potential area is for the solid-state switchgear to act as a sensor of voltage, current, and power factor and provide other advanced distribution automation functionalities. Solid-state switchgear can be automated to record and transfer vital power quality and reliability information. Solid-state switchgear should conform to IEC 61850 and to be remotely accessible via a communication system for remote control and use as a distribution system condition monitoring node (sensor for voltage, current, etc.). It is therefore necessary to identify IEC61850 logical nodes for each switchgear function, each application module, and each sensor. After a straw-man system configuration has been selected for the secondary system, there is one remaining loose end. The set of IEC-61850 logical nodes (LNs) associated with each device, each application module, and each switchgear function must be documented. Only then will there be a firm basis for specifying IEC61850 communications. Logical nodes are the source and destination of all IEC61850 substation communications. Once the available LNs are known and documented, the communications system can be evaluated to determine which modes for information flow are most appropriate. Some key characteristics for the required sensors and communication infrastructure enhancements are listed below: Key Sensor Characteristics Reliable / Fail Safe Economical Gradual displacement of analog devices New digital equipment capabilities Intelligent alarm processing Additional data used for contingency and security analysis Real time state estimation and predictive system Compatible with existing infrastructure Open-system standardized communication architecture (object modules, protocols and services) 6-3

Key Communication System Characteristics

Proposed design and Specifications for Family of Solid-State SwitchGear

Establish standardized self-describing object modeling Capable of supporting distributed computing Replacement of discrete station wiring with flexible communication networks Advanced and secure communication media Reliable / Fail Safe Economical Compatible with existing infrastructure

The project team initiated discussions with leading manufacturers like Mitsubishi, ABB, Silicon Power, S&C, Siemens, GE, Diversified Technologies to gain insights on the technical as well as economic feasibility of developing a family of low cost distribution and transmission switchgears. Discussion with Silicon Power Corporation revealed at they are proposing to design a range of medium voltage and high voltage Hybrid Solid State Circuit Breakers (HSSCBs). A hybrid mechanical/electronic approach is being proposed in their earlier designs to limit the on-state losses and to minimize the cooling requirements of the semiconductor switches. The use of a hybrid approach allows the semiconductor junction to operate from a lower starting temperature and allows the interruption of higher fault currents than a completely solid state unit. Silicon Power proposes to use its advanced ultra-switch technology (Super Gate Turn-Off) which consists of planar, high voltage, high turn-off current semiconductor switches with integral current sensing. This device development effort (which is also partially funded by EPRI) is in a quest to obtain a fast switching, high peak current, low-loss, solid state switch. This GTO thyristor, termed the Super-GTO, is fabricated using Integrated Circuit (IC) processing technology. When compared to the traditional deep-diffused thyristor, IC processing technology enables the optimization of the thyristor for: Lower conduction losses Higher switching speed. Higher peak current turn-off capability Lower manufacturing cost.

Using the ultra-switch modules, the current can be commutated at any point before the natural zero crossing; this allows much faster performance than with the use of typical thyristors. The use of forced commutation power electronic switches allows the hybrid designs to interrupt current at a preset current level and limit fault current let through into the protected load. Silicon Power also proposes to develop a range of medium voltage and high voltage Solid State Circuit Breakers (SSCBs) as well. Silicon Power already has "all-solid" state based transfer switches.

6-4

Proposed design and Specifications for Family of Solid-State SwitchGear

Discussion with Mitsubishi Electric Power Products Inc. revealed that they already have an "all solid-state" based 15KV, 600A breaker which provide cycle current interruptions. This is termed as "Light Speed SSBs." This device at present uses thyristor technology for switching. Mitsubishi also has a hybrid transfer switch ("Light Speed SSTS").

A Conceptual Design Candidate for Developing a Family of Solid-state Switchgear


A new hybrid switchgear design is presented in this chapter which is an innovative, scalable and offers a multi-functional approach to next generation medium and high voltage solid-state switchgears. The topology proposed here is the first design that has the potential of achieving all of the goals for a solid state circuit breaker such as rapid fault clearing, instantaneous fault isolation, fast current limiting for downstream coordination, soft switching capabilities, rapid load transfer, and a sale price of 5 to 7 times that of conventional breakers and reclosers. This conceptual design is a suitable candidate to the development of a family of low-cost solid-state switchgear which can expand the capabilities of existing switchgears to a modular integrated electrical interface and is therefore a viable market opportunity. The proposed approach is based on innovative, multi-functional, modular, and hybrid design of power electronics based switchgear which will offer important advantages during design, testing, manufacturing and service stages [3-8] namely: Design is simplified because within the module one is dealing with comparatively low voltages Testing is also simplified because of the reduced voltage level. The same modules can be applied to many different voltage ratings and applications One can use the same modules for different voltage breakers by stacking the appropriate number of modules depending on the voltage level of the breaker. This way we reap the benefits of mass production even further by: Having the same building block for different voltage breakers, thus simplifying manufacturing, testing and repair costs.

The Proposed Universal Hybrid Switch A universal hybrid switch is proposed here for multi-purpose circuit breaker and fault current limiting applications. Although the requirements for fault clearing, recloser, transfer switch, and current liming are different, the most difficult task is to turn the device off without going through zero crossing. Thus the first design criterion for a universally used switch is to be able to interrupt the current any time. In this case the gate controlled device is the best choice. For the cost and reliability concerns, the circuit must be as simple as possible to avoid excessive bulky passive components. In this case the pure SCR based switch needs to be excluded. Even though SCR can be force-turned off by external commutation circuits for fault current limiting, the added components are simply not justifiable. Unfortunately all gate-controlled switches have high voltage drop that significantly degrades the efficiency. Thus the proposed switch is a 6-5

Proposed design and Specifications for Family of Solid-State SwitchGear

hybrid version that utilizes fast mechanical switch for regular conducting and gate-controlled switch for fault clearing and current limiting. Advantages of this design include: Sub-cycle operation Long Breaker cost life and Reduced Maintenance Costs SF6, is not required Lower Losses Less Expensive than "All solid-state" designs Cooling not required Reduced Switching Transients Current Limiting Capabilities

Proposed Structure Figure 6-1 shows the circuit diagram and basic operation waveform of the proposed universal hybrid switch (UHS) under fault current limiting condition. The switch consists of a fast mechanical switch Sm and a solid-state switch Sss. The solid-state switch Sss consists of a diode bridge and a PWM controlled IGBT or other gate-turn-off device to form a bidirectional switch. When the fault occurs, Sm is turned off, and Sss is turned on to allow current flowing through the bidirectional switch. This fault current magnitude can be controlled by the PWM switching.

Vs current Sm Sss fully off PWM control Is Vs vge Ts Vs Is Fault current limit occurs Sss TVS Is Sm

ultrafast switch Fault MOV

IGBT

6-6

Snubber

Proposed design and Specifications for Family of Solid-State SwitchGear

Figure 6-1 Circuit Diagram and Basic Operation Waveform of the Proposed Universal Hybrid Switch

The proposed switch has current and voltage sensors, Is and Vs, that can also serve as the monitoring purpose. A temperature sensor Ts is also fed back to the controller for device protection. The gate-drive circuit has a transient-voltage suppressor (TVS) to allow gate triggered under over-voltage condition to protect the device from instantaneous over-voltage failure. A metal-oxide-varistor (MOV) is also added to absorb transient over voltage coming from the system. When the switch is operating in PWM condition, the snubber circuit serves as the energy buffer that allows current magnitude to be regulated. Operating under Fault Clearing Mode The fault clearing mode can be controlled by simply turning off the switch without PWM operation. Figure 6-2 shows the UHS associated waveform under fault clearing mode operation. When the fault occurs, the mechanical switch Sm turns off, and the solid-state switch Sss turns on to avoid the arc. Once the current is flowing in Sss, then it can be turned off any time to clear the fault. Similar operating procedure can also be applied to static transfer switch operation. In that case, two UHSs are needed.

Vs current Sm Sss fully fully fully off on off Is Vs vge Ts Vs Is Sss TVS Is Sm

ultrafast switch Fault MOV

IGBT

Figure 6-2 The Proposed UHS Operating Under Fault Clearing Mode

Snubber

6-7

Proposed design and Specifications for Family of Solid-State SwitchGear

Operating under Linear Region The fault current limiting mode can also be controlled by operating the device in linear region without PWM operation. The operation is simply to reduce the gate drive voltage so that the device goes into high impedance mode. Figure 6-3 shows the waveform associated with linear mode current limiting operation. In this case, a large amount of power needs to be consumed in the device, and the temperature can shoot high very quickly. Thus this mode of operation is not recommended for a long-term current limiting condition. It would require the temperature feedback to ensure device junction temperature stays below the limit.

Vs current Sm Sss fully fully current off on limiting Is Vs vge Ts Vs Is Fault occurs Sss IGBT TVS Is Sm

ultrafast switch Fault MOV

Figure 6-3 The Proposed UHS Operating Under Linear Region for Fault Current Limiting

Note that the linear region operation cannot be achieved with all thyristor devices because they are the latch-on devices. However, the GTO and GTO (ETO, Super-GTO) derives devices can all be used in PWM operation with a lower switching frequency. Figure 6-4 shows the circuit diagram and associated PWM waveform using GTO or GTO-derived devices for current limiting operation. The use of GTO does not have over-voltage protection function provided by the gate drive circuit, but the same function can be performed with MOV. The voltage snubber is needed for the energy buffer as well as the dv/dt protection. The current snubber function may be obtained by the line inductance.

6-8

Snubber

Proposed design and Specifications for Family of Solid-State SwitchGear

Vs Sm

current

Is

Sm

ultrafast switch Fault

Sss

GTO

Vs Is Fault current limit occurs

Sss

Figure 6-4 The Proposed UHS Adopting GTO or GTO-Derived Device as the Switching Device for PWM Operation

Generic Specifications for Hybrid Solid-State Switchgear Design


The specification is intended to provide designers with a set of functionalities that are desirable in the context of solid-state switchgear rather than an exhaustive list of requirements. The functional specification is written in a technology-neutral manner so as to provide designers with maximum flexibility in achieving the desired functionalities. At a minimum, the functionality of the proposed design should meet the basic functionality of conventional distribution breakers and reclosers (for example for 15KV, 600A class). The proposed design should also adhere to the relevant requirements for operating environment, structural design, insulation level, short circuit protection, surge withstand and other issues that are described in the C37 series of ANSI/IEEE standard for breakers and reclosers. Specific C37 series standards that are relevant to distribution switchgears are as follows: ANSI C37.42-1989, American National Standard Specifications for Distribution Cutouts and Fuse Links. ANSI/IEEE C37.60-1981, IEEE Standard Requirements for Overhead, Pad Mounted, Dry Vault, and Submersible Automatic Circuit Reclosers and Fault Interrupters for AC Systems. Cooper Power Systems, "Comparison of Recloser and Breaker Standards," February, 1994. IEEE Working Group on Distribution Protection, "Distribution Line Protection Practices Industry Survey Results," IEEE Transactions on Power Delivery, vol. 10, no. 1, pp. 176-86, January 1995. 6-9

Snubber

MOV

fully off

PWM control

Is Vs vge Ts

Proposed design and Specifications for Family of Solid-State SwitchGear

ANSI C37.06-2000, AC High-Voltage Circuit Breakers Rated on a Symmetrical Current Basis--Preferred Ratings and Related Required Capabilities. ANSI C37.42-1989, American National Standard Specifications for Distribution Cutouts and Fuse Links. ANSI/IEEE C37.60-1981, IEEE Standard Requirements for Overhead, Pad Mounted, Dry Vault, and Submersible Automatic Circuit Reclosers and Fault Interrupters for AC Systems. Cooper Power Systems, "Comparison of Recloser and Breaker Standards," February, 1994. IEEE Working Group on Distribution Protection, "Distribution Line Protection Practices Industry Survey Results," IEEE Transactions on Power Delivery, vol. 10, no. 1, pp. 176-86, January 1995. Westinghouse Electric Corporation, Applied Protective Relaying, 1982. ANSI/IEEE C37.90.1-IEEE Surge Withstand Capability (SWC) Test for Protective Relays and Relay Systems. ANSI/IEEE C37.90.2 - IEEE Standard Withstand Capability of Relay Systems to Radiated Electromagnetic Interference from Transceivers. Three phase and ground time over-current protection with timing in accordance with IEEE Std. C37.112 (Distribution Requirement) Hi-set instantaneous over-current protection (Distribution Requirement) Low-set instantaneous overcurrent protection, enabled/disabled by state of reclosing cycle (Distribution Requirement) Auto-reclosing function, settable for 0-3 reclosing attempts, 0-60 seconds adjustable delay per attempt, lockout after last attempt, 0-60 seconds reset delay after lockout reset (Distribution Requirement) Three-zone phase and ground distance protection (Transmission Requirement) Directional ground instantaneous and time overcurrent protection with timing per C37.112 (Transmission Requirement) Auto-reclosing function, as for distribution applications, but also with synchronism checking capability (Transmission Requirement)

Design Considerations for Hybrid Solid-State Current Limiters and Breakers


While a number of candidate technologies have been discussed and reviewed in previous chapters, the first generation of solid-state switchgears should use reliable and field-proven technologies. Also, it is desirable that the next generation family of power electronics based switchgears be scalable, be multi-functional, and be capable of being easily tailored to meet specific application requirements without major changes to the baseline design. 6-10

Proposed design and Specifications for Family of Solid-State SwitchGear

A thorough design and performance analysis therefore should be conducted on any prospective design of solid-state switchgear to evaluate, which one of the functional specifications can be achieved with the particular design and what will be tradeoff in cost, efficiency and reliability to achieve additional functionalities. It is feasible that many of the functionalities listed below can be programmed into the solid-state switchgear in different modes of operation. For example, transfer switch capabilities and fast fault clearing and instantaneous current limiting could be two different modes of operation that can be integrated within the same hardware platform and depending on the controller operating mode any one of the feature could be activated. Basic Requirements for a 15KV, 600A Hybrid Design for a Circuit-Breaker / Recloser / Current Limiter Steady-state current rating 600 A, continuous Emergency overload capability 800 A, 1 hour 700 A, 8 hours Short-circuit current rating 12.5 kA, symmetrical (for one second) Voltage rating 15.5 kV line to line Low-frequency withstand voltage 50 kV, one minute BIL 110 kV Losses Less than 10 kW Independent phase operation Each phase can open and close independently Speed Clears faults within 1/2 cycle
6
6

20KA peak 1/2 cycle rating

6-11

Proposed design and Specifications for Family of Solid-State SwitchGear

Control connections The switch must have a connector to the controller. It is desirable to have an industry standard connection that could be used with other controllers (Schweitzer for example), but this setup may not be fast enough to achieve desired operational speeds. Another option is to have the controller built-in to the switch; then, an external connector must be available to communicate with the controller to program settings and download data.

Controller capabilities The controller must provide standard functionality of digital relays, comparable to the SEL 351 relay.

Powering and backup Should operate from a supplied external 120 VAC source. Should operate for up to 8 hours on battery backup.

Smart Sensor and Monitoring System Develop a list of what parameters needs to be monitored. Some of these functionalities could include: Capable of providing real time information about voltage magnitude, current magnitude, power quality characteristics of the voltage and current, real and reactive power, temperature, energy use, harmonic distortion, power factor, etc.. Alarming functions with intelligence for processing data and identifying conditions that require notification of the utility or utility automation system. These could include outages, power quality conditions outside of specified thresholds, excessive energy use, conditions characteristic of equipment problems, incipient fault detection, equipment problem identification, fault location, performance monitoring of protective systems, harmonic resonance conditions, etc. Real time state estimation and predictive systems (including fault simulation modeling) to continuously assess the overall state of the distribution system and predict future conditions, providing the basis for system optimization. Information systems that can integrate meter data with overall information systems for optimizing system performance and responding to problems (outage management, asset management, SCADA, loss analysis, customer systems, etc.) Integrate communications and control functions in order to optimize system performance Capable of providing real time information about voltage magnitude, current magnitude, power quality characteristics of the voltage and current, real and reactive power, temperature, energy use, harmonic distortion, power factor, etc.

Determine the type of sensor equipment and support equipment for the sensors

6-12

Proposed design and Specifications for Family of Solid-State SwitchGear

Communication and Control Infrastructure7 Develop an open communication architecture to facilitate the system monitoring and control functions Conform to IEC 61850 and to be remotely accessible via a communication system for remote control and use as a distribution system condition monitoring node Provide procedures for Communications technology8 in the meter with appropriate protocols and information systems to support two-way communication between an overall communication system and the individual customer facility meters. The procedures include: Determine functional requirements Determine the communication system requirements to support these functions Identify IEC61850 logical nodes for each switchgear function, each application module, and each sensor Develop IEC61850 data exchanges within the solid-state switchgear Develop IEC61850 data exchanges with external systems Specify conformance testing Specify IEC61850 configuration tools

Communication infrastructure for integrating customer meter data with a real time system data manager. This might involve local concentrators and data processing depending on the specific architecture and design.

Enclosure Must fit in enclosures for overhead pole mounting (like a recloser), padmounted application, and installation in draw-out metal-clad switchgear. This requires a size of approximately: 28W 32H 14D

As the distribution system becomes more automated, opportunities exist to improve the utilization of distribution switchgears. More sophisticated automation integrated with solid-state switchgear can serve as an outage notification and outage management device, remotely control the different mode of the functionality of the breaker and monitor condition of the breaker and the power system in real time. The proposed design should evaluate centralized control, decentralized control, and combination approaches for automation. Realizing the full potential of an solid-state switchgear will require more sophisticated communication architectures. A promising platform is the IEC 61850 architecture that is an open industry standard developed from EPRIs Utility Communications Architecture (UCA). A wide variety of equipment can plug into this architecture. The proposed design should provide the flexibility to integrate the IEC 61859 architecture within the switchgear. 8 In general, the communication architecture will be comprised of two major elements, object models and protocols. An object model is a detailed data template for the information exchange needed for monitoring and controlling a device within the architecture of a power distribution system (or other system). The object model makes the device recognizable and controllable (i.e., interoperable) to the power system. This is analogous to hooking up remote devices to a computer. The remote devices are interrogated by the operating system of the computer and an interoperable interface is established. The other principal component of the communications architecture is the communication protocols. Protocols are the rules for transfer of the data within the communication system. For example, the protocols are the rules for taking the information from the switchgear (as represented in its object model) and transferring it to a SCADA or other device.

6-13

Proposed design and Specifications for Family of Solid-State SwitchGear

Insulation It could be oil, SF6, or solid insulation.

Price Manufacturing cost should be compared with US$20,000 (three-phase) for a conventional breaker

Optional Features (Scalable Implementation) Current limiting Threshold For example, for short circuits to 50 kA, limit current to 10 kA peak. The ability of power electronic based switchgear to limit the magnitude of fault currents is one of its most valuable features. Maximum fault currents on electric power systems tend to grow over time because of reinforcement of the system to handle larger loads. Switchgear designs which can limit maximum fault currents, may avoid the need to replace large amounts of expensive equipment whose fault current capability has been outgrown. Typical distribution system fault currents range from 20KA to 64KA. Having a current-limiting threshold that can be adjustable, rather than fixed, might be desirable. Short-circuit current rating 23 kA, symmetrical Steady-state current ratings 800, 1200, 2000, 3000 A Voltage 25 and 35 kV models Gang operation It is desirable that the switches can be applied in modules in parallel or series to increase voltage and/or current ratings.

6-14

7 ECONOMIC EVALUATION
We have a digital economy and we're still trying to provide power to it through a mechanical design system that was designed over 50 years ago. Its a marvelous system, but we've been effectively borrowing against the future to pay for the present, and the future has caught up with us; we need to build the system to serve the digital society of the 21st century. Gunpowder, the printing press, the commercial generation of electricity, the personal computer, and the Internet were all major paradigm shifts. Not surprisingly, they all swept away current practice or modified it significantly. In each case, there was a present need, a confluence of technologies, and a vision of how to combine technology and need for economic gain and unprecedented advantage. One of the objectives for this years effort was to conduct a comprehensive feasibility assessment for next generation solid-state switchgear. The need for solid-state switchgear must be based on clearly defined utility requirements to meet added functionalities and availability of power electronic technology. Therefore, utility requirements drive the need for the development and deployment of next-generation power electronics based solid-state switchgear. This understanding is vital to the design, implementation, and acceptance in any utility. Variety of applications for the applicability and feasibility of developing solid state switches was investigated. Examples include: Circuit sectionalizing and reconfiguration. This is an important application as solid state switches have the potential to eliminate even momentary interruptions for the great majority of customers on distribution systems when a fault occurs. Solid state switches for reconfiguring systems can also allow for optimizing performance through reconfiguration without imposing momentary interruptions on customers. Solid state transfer switches are the primary application for distribution solid state switchgear at the present time. This technology provides a good starting point for the technology characterization effort in this project. Capacitor bank switching. Solid state switches can prevent transient voltages during capacitor switching and will allow capacitors to be switched in and out as often as needed. The result is better control of var flows, voltage, and flicker on the distribution system without causing unacceptable transient voltages. Interfaces with distributed generators. Solid state switches can facilitate implementation of local islanding schemes for distributed generators and allow connection and disconnection without concern for transients. Fault clearing and current limiting applications. Clearing faults quickly and/or limiting the fault currents can have tremendous advantages for both the utility and for customers. The utility benefits because the fault current impact on system components (cables, transformers, 7-1

Economic Evaluation

switchgear, etc.) is reduced. Customers benefit because the voltage sag experienced throughout the system due to the fault is basically eliminated. In a recent study [7], EPRI conducted a comprehensive survey to assess utility needs and perceptivities with respect to power electronics based solid state switchgear9 that can limit fault currents. Some of the key findings that are relevant to the outcome of the economic assessment presented in this chapter include: Survey results indicate that up to 20% of utilities expecting to replace 5 to 10% of their circuit breakers in the next 10 years would use a fault current limiting devices that are priced at 1 to 5 times a circuit breaker Utilities having a greater expectation for circuit breaker replacement are even more likely to use a solid-state fault current limiter the percentage increases to 30% of utilities when the range of circuit breaker replacement need expands to 5 to 30% Cases where breakers with the required ratings are not available, or where excessive fault current levels carry more than only cost of a breaker upgrade alone, 50% of the utilities value a solid-state fault current limiter at 2-5 times the cost of a breaker

While a number of candidate technologies have been discussed and reviewed in previous chapters, the first generation of solid-state switchgears should use reliable and field-proven technologies. Also, it is desirable that the next generation family of power electronics based switchgears be scalable, be multi-functional, and be capable of being easily tailored to meet specific application requirements without major changes to the baseline design. A new hybrid switchgear design is presented in the previous chapter which is an innovative, scalable and offers a multi-functional approach to next generation medium and high voltage solid-state switchgears. The topology proposed here is the first design that has the potential of achieving all of the goals for a solid state circuit breaker such as rapid fault clearing, instantaneous fault isolation, fast current limiting for downstream coordination, soft switching capabilities, rapid load transfer, voltage and current monitoring, and a sale price of 5 to 7 times that of conventional breakers and reclosers. This conceptual design appears to be a suitable candidate to the development of a family of low-cost solid-state switchgear which can expand the capabilities of existing switchgears to a modular integrated electrical interface and create new service opportunities to meet the customers' requirement and is therefore a viable market opportunity. The proposed approach is based on innovative, multi-functional, modular, and hybrid design of power electronics based switchgear. The next section provides the overall economic assessment for new hybrid switchgear design proposed in chapter 6. Preliminary production cost and benefit analysis are based on existing and estimated component costs. Cost estimates are derived for two separate ratings 1) 15KV class 600A and 2) 35KV 1200A. Complete listing of all the parts and its individual costs are also provided.

It is assumed that the solid-state switchgear is equivalent to the circuit breaker in all other respects (e.g., reliability, compatibility with protection, ease of installation, operation and maintenance, etc.) as outlined in the previous chapter

7-2

Economic Evaluation

Economic Assessment An Overall Comparison


The proposed universal hybrid switch (UHS) can be implemented with any gate-controlled highvoltage devices. Since the efficiency relies on the mechanical switch, the selected device simply needs the ease of the controllability and high interrupting current capability. The IGBT is thus chosen for the first cut cost estimate. The cost difference with the use of other types of device should not be significant.

Iline

Sm

ultrafast switch

Is Sensor Vs Conditioning, v ge Control, & Gate Drives Ts Sss

TVS

IGBT

Figure 7-1 Circuit Configuration of the Universal Hybrid Switch

To start with, a 15kV, 600A hybrid universal switch is used as the example for the estimation of system cost. In order to have 600A continuous and 12.5kA short-circuit current rating, we need two of 5SNA0600G650100, or other 6.5kV, 600A IGBTs. The BIL rating can be achieved with the selection of MOV or arrester. With 15kV line-to-line, the phase-to-neutral is 8.66kV or 12.2kV peak. By designing with twice voltage margin, we need four devices in series to give 26kV total voltage rating. Thus total number of devices per phase is 8. Figure 7-2 shows the circuit configuration of the 15kV, 600A HV-IGBT based UHS that requires 4 solid-state switches in series, Sss1 Sss4.

Snubber

MOV

7-3

Economic Evaluation

Iline

Sm

Ts1 Sss1 Sensor Conditioning, Control, & Gate Drives

IGBT

Ts4 Sss4

IGBT

Figure 7-2 Circuit Configuration of the 15kV, 600A HV-IGBT Based Universal Hybrid Switch.

For 35kV, 1200A hybrid universal switch, the desired current rating needs 4 devices in parallel, and the desired voltage blocking needs 9 in series. Thus the total number of devices per phase is 36. Based on a small quantity purchase, the production cost of the above two designs can be estimated as shown in Figure 7-1. The estimated cost of the 15KV, 600A design is approximately 7 times higher than a conventional recloser/circuit breaker of similar rating.

7-4

Snubber

MOV

V4 vge4

TVS

Snubber

MOV

Is V1 vge1

TVS

Economic Evaluation

Table 7-1 Estimates of Small-Quantity Production Cost for the Hybrid Universal Switch

Component per Phase Solid-State Switch IGBTs Rectifier Diodes Transient Voltage Suppressor Snubber Circuit MOV Heat Sink and Cooling Voltage Sensors Current Sensor Gate Drives Auxiliary Power Supplies DSP Controller Conditioning Circuit I/O Interface Mechanical and Assembly Subtotal Mechanical Switch Switch Bushing Bus and Wiring Subtotal Others Housing Design Engineering Installation and Testing Subtotal Total per Phase Total per Three-Phase

15kV, 600A UHS qty unit price 8 16 4 4 4 4 4 1 8 8 1 1 1 1 $ $ $ $ $ $ $ $ $ $ $ $ $ $ 1,500 200 200 250 200 350 1,000 400 150 100 400 200 200 1,500

ext. price $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ 12,000 3,200 800 1,000 800 1,400 4,000 400 1,200 800 400 200 200 1,500 27,900

35kV, 1200A UHS qty unit price ext price 36 72 9 9 9 9 9 1 36 36 1 1 1 1 $ 1,250 $ 200 $ 200 $ 250 $ 200 $ 350 $ 1,000 $ 400 $ 150 $ 100 $ 1,000 $ 500 $ 500 $ 4,500 $ 45,000 $ 14,400 $ 1,800 $ 2,250 $ 1,800 $ 3,150 $ 9,000 $ 400 $ 5,400 $ 3,600 $ 1,000 $ 500 $ 500 $ 4,500 $ 93,300

1 2 1

$ $ $

7,500 400 400

$ $ $ $

7,500 800 400 8,700

1 2 1

$ 23,500 $ 1,400 $ 1,000

$ 23,500 $ 2,800 $ 1,000 $ 27,300

1 1 1

$ $ $

5,000 5,000 5,000

$ $ $ $

5,000 5,000 5,000 15,000

1 1 1

$ 12,500 $ 12,000 $ 15,000

$ $ $ $

12,500 12,000 15,000 39,500

$ 51,600 $ 154,800

$ 160,100 $ 480,300

The cost for the solid-state switch portion is more than 50% of the entire UHS. However, this percentage will come down in large quantity production. Also it can be seen that the cost of IGBT is about 25% of the entire UHS. Even if other lower cost gate-turn-off devices are used, the entire system cost may not see a noticeable difference. There are some other non-production related costs such as initial design and engineering, tooling, overhead, and inventory, etc.

7-5

8 EPRI SOLID-STATE SWITCHGEAR DEVELOPMENT


R&D ROADMAP
Following the General Trends to Support the Vision Direction
One approach, commonly known as the stage-gateTM model, whose chief characteristic is a hierarchical flow of possible milestones that would have to be realized during the various phases for the development of any new technology is shown in Figure 8-1. Stage gate breaks the innovation process into a predetermined set of stages, each consisting of prescribed, multifunctional, and parallel activities. Many leading companies and research organizations have developed a systematic stage-gate process for moving a new product through the various steps from idea to launch. Most importantly, they have built the key lessons into the roadmap for new product success in order to improve the effectiveness and timeliness of their product.

8-1

EPRI Solid-State Switchgear Development R&D Roadmap

Concept Definition

Design, Development, and Testing

Market Launch

Adaptive Process

Degree of Uncertainty in Product Definition

Traditional Process

Time

Full Production & Market Launch

Testing & Validation

Prototype Development

Detail Design Analysis

Market Analysis & Feasibility Study & Conceptual Design

STAGE GATE APPROACH

Figure 8-1 A Stage-Gate Approach for New Product Development

8-2

EPRI Solid-State Switchgear Development R&D Roadmap

Traditional stage-gate or PACE processes (shown on the left in Figure 8-1 where the gates are transparent) assume that there is little uncertainty associated with the technologies to be utilized for product development. The gates can be identified, clearly defined, and planned for, and their outcomes are known right from the beginning of the development process. In simple terms, the product development team can see all the deliverables at the gates, because most of product-development stages are predictable. It should be noted that even though this curve varies with individual application areas and technologies, it does convey a trend relative to the effects of realizing the ultimate vision. The distribution as well as transmission system has been identified to be the next major target for solid-state power conversion. The overall objective of this study is to lay the foundation for EPRIs multifunction solid-state switchgear program and define the subsequent phase for multiyear effort of this project. This chapter provides a detailed description of the possible phases for design and development of the chosen hybrid switchgear technology along with schedules, important milestones, and commercialization cycle for the development work, field testing and commercialization. Distribution and transmission switchgear development effort has been broken down into two distinct product families; namely: Generation 1: 15KV Class Distribution Switchgear Development (breaker, a current limiter, DG isolation switch, capacitor switch, tie breaker, and transfer switch) Detailed design analysis and functionality verification (2006) Bench model development and testing (2006-2007) Field prototype development and deployment (2008-2009)) Field testing and debugging of field prototype (2008-2009) Finalization of design, packaging and preparation of product family specification and subsequent commercialization (2010)

Generation 2: 35KV/138KV Class Distribution/Transmission Switchgear Development (breaker, a current limiter, DG isolation switch, capacitor switch, tie breaker, and transfer switch) Bench model development and testing (2011-2012) Field prototype development and deployment (2013) Finalization of design, packaging and preparation of product family specification and subsequent commercialization (2014)

Overall Roadmap Timeline for the "Hybrid" and Solid-State Switchgear Designs How to Realize the Vision in the Future
Power electronics will be a key element in the next generation switchgear designs. Long-term research should have the application in mind and the power electronics circuit as the core to guide the development of semiconductor devices and other peripherals. Blind development of

8-3

EPRI Solid-State Switchgear Development R&D Roadmap

semiconductor devices without a proper guidance of application and circuit design would be a wasteful effort. History indicates that the success of a semiconductor device is heavily dependent on the success of the application. Examples are power MOSFETs in switching-power-supply applications and IGBTs in variable-frequency drive (VFD) applications. Failure to bring the MOS-controlled thyristors (MCTs) to the market is the most recent and obvious example. Market demand triggers the need for power electronics equipment such as power supply and adjustable-speed drives, but the right choice and development of semiconductor devices enables the development of power electronics equipment. In most cases, power electronics researchers have to choose off-the-shelf power devices with the specifications that best fit their applications. They usually do not have a say about how they would like the device parameters to be changed. On the other hand, materials and device researchers build switching devices for the power electronics researchers to use in their circuits, but they rarely know how and where the devices are going to be used. Also, the availability of the semiconductor device dictates the circuit development. As represented in Figure 8-2, a barrier still exists between the people who design and build power devices and the people who use them in their circuits and systems. Close interaction between the both sides of the barrier is needed to obtain the most performance for devices and systems. With this interaction, the design loop will be closed and the possibility for building optimal application-specific power devices will arise. From the information provided in the earlier chapters, it is evident that significant opportunity exists for continual development efforts to build power electronics based switchgear in distribution and transmission systems. With the recent advances in power electronics, especially in the areas of high-voltage power electronics (see Figure 8-3); solid-state-based switchgear designs are well within the realm of possibility.

8-4

EPRI Solid-State Switchgear Development R&D Roadmap

Circuit Design, Develop Functional Specifications, Develop Hardware Requirements, Define Physical layout and Package Requirements

Bench Model Development Fabrication, & Testing

Si/SiC Processing
Basic R&D for Power Semiconductor Devices Research Activities should focus on possible improvements in technology Reduce conduction and switching losses Faster switching Improvement in efficiencies Improvement in short-circuit capability Improvement in thermal management to handle high temperature Reduce possible voltage balancing Reduce EMI Levels Optimize isolation designs to s atisfy HV applications Low saturation level Improved Gate design to reduce noiseSnubber-less operation Fast turn-on and turn-off capabilities Ability to withstand high V&I Improvement in current density

Device Design, Fabrication, & Testing

Figure 8-2 Closing the Device Design Loop A Key for Building Optimal Application-Specific Power Devices

8-5

EPRI Solid-State Switchgear Development R&D Roadmap

High Voltage (1-25 kV) High Current Density (>1kA/cm2)

Simplified circuits and expanded capability

High Duty Cycle (>100 kHz)

Smaller, lower loss, active and passive components Smaller cooling systems

High Temperature (>250 C)

Silicon Carbide
Mi T h l Offi

Figure 8-3 Trends in Semiconductor Device Advancement [DARPA HPE Program10]

The primary activity of this years research was to develop a comprehensive feasibility assessment and verify the functionality of the solid-state based switchgear technologies and their applications in transmission and distribution systems. This preliminary research is the first step before embarking on development of the hardware and associated controls for a prototype solidstate switchgear. This is the most critical stage because the commitment to a certain design topology will ultimately lead to hardware and controller development and lab prototype. The next section adopts the traditional stage-gate approach to provide a more refined EPRI long-term roadmap for the development of the chosen switchgear designs and schedule for the development work, field testing, and commercialization. Unlike the "all solid-state" designs which use power electronics in its entity as the enabling technology, the hybrid design is based on using a conventional electromechanical switches and seamless integration of power electronics systems that are capable of interrupting load or fault currents in critical load applications or be applied as a transfer switch, tie breaker, or fault current interrupter.

10

The Defense Advanced Research Projects Agency (DARPA) under Department of Defense wide bandgap semiconductor technology (WBST) high power electronics (HPE) program started in 2002. The objective of the program is to revolutionize high power electrical energy control, conversion, and distribution by establishing a new class of solid state power switching transistors employing wide bandgap semiconductor materials.

8-6

EPRI Solid-State Switchgear Development R&D Roadmap

The overall technology roadmap characteristics, as shown in Figure 8-4, provide a consolidated summary of the key technology metrics that are required to realize the development of any allsolid-state and "hybrid" based switchgear designs.
Roadmap
ShortShort-Term
ultrafast switch

Technology Watch
Technology: Hybrid solid-state design using mechanical switch and gate turn-off technology Level: Distribution System Ratings: 15KV / 35KV class 600A / 1200A / 3000A Maturity: Concept stage; Risk - Low Product Development: 1-3 years Field Application: 3 years Potential Market Drivers: Act as a breaker, current limiter, a transfer switch, tie breaker Technology: All electronics (solid-state) based design Level: Distribution System Ratings: 15KV / 35KV class 600A / 1200A / 3000A Maturity: Concept stage; Risk - Intermediate Product Development: 4-6 years Field Application: 6 years Potential Market Drivers: Act as a breaker, current limiter, a transfer switch, tie breaker Technology: All electronics (solid-state) based design OR Hybrid solid-state design using mechanical switch and gate turn-off technology Level: Distribution System Ratings: 138KV class 600A / 1200A Maturity: Conceptual Stage in development; Risk High Product Development: 6-9 years Field Application: 9 years Potential Market Drivers: Act as a breaker, current limiter, a transfer switch, tie breaker

Iline

Sm

IGBT Sss

MidMid-Term

LongLong-Term

Figure 8-4 A Generic Technology Roadmap to Realize a Family of Power Electronics Based Switchgear Designs in Distribution and Transmission Applications

EPRIs Long-Term Roadmap


The distribution as well as transmission system has been identified to be the next major target for solid-state power conversion. Lack of strong initiative and proper long-term research plan has always been a barrier in new technology development. EPRI, as the leading research institute in the power industry, is ideally suited to take the first step to initiate the research in this direction based on a long-term research plan targeting the development of medium and high voltage, highpower semiconductor switches and parallel development of circuit topology, controller, and prototype of solid-state distribution switchgear. The following research plan provides a brief description of the possible different phases of the intelligent universal transformer development effort with estimated time and milestones. This section adopts the traditional stage-gate approach discussed earlier and provides a detailed description of the possible phases (shown in Figure 8-5) for design and development of the solidstate switchgear technology along with schedules and important milestones (see Figure 8-6) for the development work, field testing, and commercialization. Distribution and transmission switchgear development effort has been broken down into two distinct product families as indicated before. The two product families and possible phases for development, testing, and commercialization include: 8-7

Snubber

Is Sensor Vs Conditioning, v ge Control, & Gate Drives Ts

TVS

MOV

EPRI Solid-State Switchgear Development R&D Roadmap

Generation 1: 15KV Class Distribution Switchgear Development (breaker, a current limiter, DG isolation switch, capacitor switch, tie breaker, and transfer switch) Phase I: Detailed design analysis and functionality verification of family of "All SolidState" and "Hybrid" Switchgear Topologies (Voltage Ratings: 15KV, 35KV, 138KV & Current Ratings: 600A, 1200A, 3000A) which can be used as a breaker, a current limiter, DG isolation switch, capacitor switch, tie breaker, and transfer switch (2006) Phase II: Bench model development and testing of 15KV 600A distribution switchgear using hybrid technology which can be used as a breaker, a current limiter, DG isolation switch, capacitor switch, tie breaker, and transfer switch (2006-2007) Phase III: Field prototype development, deployment, and testing of 15KV 600A distribution switchgear using hybrid technology which can be used as a breaker, a current limiter, DG isolation switch, capacitor switch, tie breaker, and transfer switch (20082009)) Phase IV: Field testing and debugging of field prototype (2008-2009) Phase V: Finalization of design, packaging and preparation of product family specification and subsequent commercialization (2010)

Generation 2: 35KV/138KV Class Distribution/Transmission Switchgear Development (breaker, a current limiter, DG isolation switch, capacitor switch, tie breaker, and transfer switch) Phase I: Bench model development and testing of 35KV 600A distribution switchgear using either "all solid-state" OR "hybrid" technology which can be used as a breaker, a current limiter, DG isolation switch, capacitor switch, tie breaker, and transfer switch (2011) Phase II: Bench model development and testing of 138KV 600A distribution switchgear using either "all solid-state" OR "hybrid" technology which can be used as a breaker, a current limiter, DG isolation switch, capacitor switch, tie breaker, and transfer switch (2012) Phase III: Field prototype development, deployment, field testing and debugging (2013) Phase IV: Finalization of design, packaging and preparation of product family specification and subsequent commercialization (2014)

8-8

EPRI Solid-State Switchgear Development R&D Roadmap

Finalize design Specification

Design controller with basic functions

Integrate and test bench model

Refinement of bench model Design Based on Test Results

Bench Model Development Schedule

Design circuit for proof-ofconcept prototype

Design communication interface

Evaluate the performance of the bench model

Figure 8-5 Projections of Possible Phases and Individual Tasks for Design and Development (2006 2010)

8-9

EPRI Solid-State Switchgear Development R&D Roadmap

Field Protype Development and Testing 35KV,600A (Circuit Breaker/Current Limiter Unit/Transfer Switch)

Bench model Development and Testing 15KV,600A (Circuit Breaker/Current Limiter Unit/Transfer Switch)

Design Analysis (Voltage Ratings: 15KV,35KV,138KV Current Ratings: 600A,1200A,3000A)

Initiate Competitive Procurement Process to select Vendors

8/06 - 12/07

1/08 - 12/09

Figure 8-6 EPRIs Long-Term Roadmap for the Proposed First Generation Medium Voltage SolidState Switchgear Development Schedules and Important Milestones

Generation 1: 115KV Class Distribution Switchgear Development Phase I: Proof of Concept Design Analysis of family of Switchgear Topologies (Voltage Ratings: 15KV, 35KV, 138KV & Current Ratings: 600A, 1200A, 3000A) Year of Performance: 2006 The first phase of the research should include a comprehensive design analysis to verify the functionality that can be achieved with the conceptual design and estimation of efficiency, cost and reliability of such a proposed design. This is the most critical stage since the commitment to a certain design topology will ultimately lead to hardware and controller development and lab prototype. Critical issues that should be addressed during the design analysis include: Selection of the circuit topology for designs with can be used as a switchgear that can be used as a breaker/current limiter/tie breaker; Selection of the circuit topology for designs with can be used as a switchgear that can be used as a transfer switch;

8-10

1/06 - 8/06

1/10 - 12/10

Commercialization of a Family of Solid-State Switchgear

EPRI Solid-State Switchgear Development R&D Roadmap

Selection of active devices and passive components and calculation for semiconductor device voltage and current ratings; Simulation of the performance using industry accepted design packages for power electronics design analysis; Estimation of the cost of the proposed system based on existing component costs and estimated component cost for different degrees of market penetration; Determination of design packaging and thermal management systems. Evaluation of the design with respect to its ability to meet the different desired functionalities that are addressed in the generic functional specification

Phase II: Bench model Development and Testing of 15KV 600A Distribution Switchgear (Circuit Breaker/Current Limiter Unit/Transfer Switch) Year of Performance: 2006-2007 The second phase of the research will proceed after selection of the preferred design topology and semiconductor device based on Phase I design analysis. The Phase II research will lead to development of the hardware, controller and packaging of a laboratory prototype (Bench model) of 15KV 600A distribution switchgear using hybrid technology which can be used as a breaker, a current limiter, DG isolation switch, capacitor switch, tie breaker and transfer switch. It is suggested that the initial bench model be based on 15-kV system so that the existing device can be used and high-voltage experience can be gained. The successful rate of concept proofing is much higher. Once the switchgear is fully designed and proven to be working, the high-voltage SiC device or an HV-IGBT or an HV- Super-GTO can be used to move the voltage level higher. The bench model serves a number of purposes, including determining that the product will work. The prototype also serves to highlight design flaws and defects that need to be resolved. Key research tasks that should be accomplished during this phase include: Design circuit for proof-of-concept prototype (2006) The complete switchgear including devices, active and passive components, heat sink, sensors, and bus bar should be designed and packaged for laboratory demonstration. Gate drivers and auxiliary power supplies need to be designed with proper isolation and minimum noise susceptibility. It is desirable to have the device protection at the gate-drive level to ensure highly reliable operation. Voltage and current and heat sink temperature should be monitored for both control and protection purposes. Design controller with basic functions (2006-2007) The controller will likely be designed with a digital signal processor (DSP) for digital control. Hardware should include sufficient PWM and analog-to-digital (A/D) and digital-toanalog (D/A) channels. The interface from PWM channels to the gate drivers would preferably be isolated by optical fibers. Software should be designed to perform basic control functions such as voltage balance and power transfer. Design communication interface (2006-2007)

8-11

EPRI Solid-State Switchgear Development R&D Roadmap

The bench model shall be designed for easy mapping to open architecture communication standards for distribution switchgear, when they become available in the IEC 61850 series. It is not known at this time when those IEC standards will be written. However, the product development shall include a communication interface with a non-proprietary object model for the device, which can be provided to IEC to aid in development of a standard Integrate and test the laboratory prototype (2006-2007) The entire power circuit and controller should be integrated for laboratory testing. HydroQubec built a distribution test feeder (see Figure 8-7) to test equipment, control cabinet, software for advanced distribution system which could be used for the purpose of testing Evaluate the performance of the proof-of-concept prototype (2007) The performance such as load current interruption, fault current limiting capabilities, ability to clear fault instantaneously, operation as a tie breaker, provide DG isolation, ability to provide soft start capability, ability to reduce switching surges, system efficiency over entire power range, heat sink temperature, total harmonic distortion (THD) of voltage and current, power factor, and so forth need to be evaluated. Refinement of Prototype Design Based on Test Results (2007) Based on initial test results the prototype design should be modified and retested in order to verify the performance of the proof-of-concept prototype. The results from the lab testing should be compared with Phase I design analysis results and any discrepancies should be accounted for before moving to the next stage of field demonstration.

Figure 8-7 Distribution Test Feeder at Hydro Quebec

8-12

EPRI Solid-State Switchgear Development R&D Roadmap

Phase III & IV: Field prototype development and testing of 15KV 600A distribution switchgear (Circuit Breaker/Current Limiter Unit/Transfer Switch) Year of Performance: 2008-2009 The fourth phase of the research will lead to development of 15KV, 600A field demonstration unit to obtain real life field experience and verification of the performance. The field demonstration units need to be designed and packaged to address the entire range of environmental and operational scenarios that may be encountered in a distribution system. Refinement of the lab prototype should address these operational and environmental issues before developing field prototypes. Utility demonstration sites will be selected and identified through competitive bids. Field demonstration prototype will be built and delivered to the selected demonstration sites for field-testing. The performance such as load current interruption, fault current limiting capabilities, ability to clear fault instantaneously, operation as a tie breaker, provide DG isolation, ability to provide soft start capability, ability to reduce switching surges, operation as transfer switch, system efficiency over entire power range, heat sink temperature, total harmonic distortion (THD) of voltage and current, power factor, and so forth need to be evaluated. Reliability and performance information will be recorded during the demonstration period for product improvement. Key issues that need to be addressed during this stage of the development effort include: Package the power circuit and component. (2008) Design controller with advanced functions (2008) Design communication interface (2008-2009) Integrate and test the field demonstration prototype (2008-2009) Demonstrate and test in selected sites (2008-2009)

Phase V: Commercialization of a Family of Solid-State Switchgear (Circuit Breaker/Current Limiter Unit/Transfer Switch) Year of Performance: 2010 The final phase is technology commercialization. EPRI will work with the developer, manufacturer, and utilities for large-quantity manufacturing and commercialization. Development of a commercialization plan will be the initial step in this phase. The commercialization plan will address the strategies for transferring this technology to the marketplace and development of a business plan centered on specific application areas. The commercialization plan will also identify the important characteristics required for successful commercialization. For example, the commercialization plan will identify essential manufacturing capabilities required to build the transformer and optimal channels to market and distribution strategies. It is anticipated that the initial phases of the research will be conducted by EPRI with cost sharing from organizations involved in the development of the hardware and field demonstration units. These organizations will also play a key role with EPRI and member utilities in identifying the best strategy for commercialization of the family of solid-state switchgears that are capable of interrupting load or fault currents in critical load applications or be applied as a transfer switch, tie breaker, or fault current interrupter.

8-13

9 REFERENCES
1. Analysis of Protective Relaying Requirement for Solid-State Current Limiter Applications (EPRI report 1001969) 2. Solid-State Circuit Breaker Scoping Study (EPRI report1000507, 2000) 3. Technical and Economic Feasibility of a Solid State Current Limiter (EPRI report 1001816, 2002) 4. Lab Tests of a Single-phase medium voltage solid state current limiter (EPRI report 1002114, 2003) 5. Field Trial Plan for a Medium Voltage, Solid State Current Limiter (EPRI report 1002116, 2003) 6. EPRIs Program to Develop Advanced Semiconductor Materials and Processes (EPRI Tech Brief 1006525) 7. Fault Current Limiters - Utility Needs and Perspectives (EPRI Report 1008696 & 1008694, 2004) 8. Survey of Fault Current Limiters (FCL) Technologies (EPRI Report 101760, 2005) 9. Feasibility Assessment for Intelligent Universal Transformer (EPRI report 1001698, 2002) 10. Development of a New Multilevel Converter-Based Intelligent Universal Transformer: Design Analysis (EPRI report 1002159, 2004) 11. Laboratory Bench Model Development of a New Multi-converter Based Intelligent Universal Transformer (EPRI report 2005) 12. Feasibility Study for the Development of High-Voltage, Low-Current Power Semiconductor Devices: 2003 Strategic Science and Technology Project (EPRI report 2004 1009516) 13. IUT EHV Patent Disclosure and IUT Power Semiconductor Evaluation: 2005 Strategic Science and Technology Project (EPRI report 2005) 14. ANSI C37.42-1989, American National Standard Specifications for Distribution Cutouts and Fuse Links. 15. ANSI/IEEE C37.60-1981, IEEE Standard Requirements for Overhead, Pad Mounted, Dry Vault, and Submersible Automatic Circuit Reclosers and Fault Interrupters for AC Systems. 16. Cooper Power Systems, "Comparison of Recloser and Breaker Standards," February, 1994. 17. IEEE Working Group on Distribution Protection, "Distribution Line Protection Practices Industry Survey Results," IEEE Transactions on Power Delivery, vol. 10, no. 1, pp. 176-86, January 1995. 18. ANSI C37.06-2000, AC High-Voltage Circuit Breakers Rated on a Symmetrical Current Basis--Preferred Ratings and Related Required Capabilities. 9-1

EPRI Solid-State Switchgear Development R&D Roadmap

19. Damsky, B.; Gelman, V. and Frederick, J., "A Solid State Current Limiter", 2003 20. Technical and System Requirements for Advanced Distribution Automation, EPRI, Palo Alto, CA: 2004. 1010915. 21. Schwartzenberg, J.W.; De Doncker, R.W., 5 kV medium voltage static transfer switch, IEEE Industry Applications Conference, Oct.1995, Vol. 3, pp. 2515 - 2520 22. Schwartzenberg, J.W., Application of AC switch power electronic building blocks in medium voltage static transfer switches, IEEE Power Engineering Society General Meeting, July 2003. 23. ANSI C37.42-1989, American National Standard Specifications for Distribution Cutouts and Fuse Links. 24. ANSI/IEEE C37.60-1981, IEEE Standard Requirements for Overhead, Pad Mounted, Dry Vault, and Submersible Automatic Circuit Reclosers and Fault Interrupters for AC Systems. 25. Cooper Power Systems, "Comparison of Recloser and Breaker Standards," February, 1994. 26. IEEE Working Group on Distribution Protection, "Distribution Line Protection Practices Industry Survey Results," IEEE Transactions on Power Delivery, vol. 10, no. 1, pp. 176-86, January 1995. 27. Short, T. A., Electric Power Distribution Handbook, CRC Press, Boca Raton, FL, 2004. 28. Westinghouse Electric Corporation, Applied Protective Relaying, 1982. 29. Technical and System Requirements for Advanced Distribution Automation (EPRI report 1010915, 2004) 30. Advanced Distribution Monitoring Definition of Requirements (EPRI report 2005) 31. Guidelines for Implementing Substation Automation Using IEC61850, the International Power System Information Modeling Standard (EPRI Report 1008688, 2004) 32. Silicon Power website www.siliconpower.com 33. Technical Specifications of Mitsubishi Electric Light Speed SSTS (Medium Voltage SubCycle Static Transfer Switch, July 2003 34. M. Takeda, T. Aritsuka, H. Yamamato, I. Kamiyama, G. Reed, Development of a Novel Hybrid Switch Device and Applications to a Solid-State Transfer Switch, IEEE PES 1999 35. Custom Power Primer Power Quality Solutions for Energy Delivery Systems (EPRI Report 1999) 36. White paper on Super-GTO Promises Leapfrog capability 37. White paper on Employing Super-GTO to develop Advanced Automatic Bus Transfer System as well as Hybrid and Solid state circuit breakers for medium and high voltage applications 38. V. Gor, D. Povh, L. Yichuan, E. Lerch, D. Retzmann, K. Sadek, G. Thumm, SCCL - A New Type of FACTS based Short-Circuit Current Limiter for Application in High-Voltage Systems, Proc. of the CIGRE Session, Paris, 2004, Paper No B4-209

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EPRI Solid-State Switchgear Development R&D Roadmap

39. Kunde, K.; Kleimaier, M.; Klingbeil, L., Integration of Fast Acting Electronic Fault Current Limiters (EFCL) in Medium - Voltage Systems, 17th International Conference on Electricity Distribution CIRED, Barcelona, May 2003 (SIEMENS) 40. Strumpler, R.; Skindhoj, J.; Glatz-Reichenbach, J.; Kuhlefelt, J.H.W.; Perdoncin, F., Novel medium voltage fault current limiter based on polymer PTC resistors, IEEE Transactions on Power Delivery, Volume 14, Issue 2, April 1999 Page(s):425 - 430 41. M. Steurer, K. Frhlich, W. Holaus, and K. Kaltenegger, A Novel Hybrid Current-Limiting Circuit Breaker for Medium Voltage: Principle and Test Results, IEEE Trans. PD, Vol 18, No. 2, April 2003, pp. 460-467 42. S. Schoft, J. Tepper, K. Niayesh, Short Circuit Current Limitation by means of Liquid Metal Technology, Proc. of the Conference on Switching Arc Phenomena, Lodz, Poland, 19-22 Sept 2005 (ABB) 43. SC Power to Install 2 HTS Fault Current Controllers, Superconductor Week, Vol. 19, No.11, pp. 1, 6-8, June 27, 2005 44. Hawley, C. J.; Darmann, F.; Beales, T. P., Peformance of a 1 MVA High Temperature Superconductors-Enabled Saturable Magnetic Core-Type Fault Current Limiter, Superconducting Science And Technology, Vol. 18 (2005) Page(s): 255 259 45. High Temperature Superconducting Matrix Fault Current Limiter: Proof-of-Concept Test Results (EPRI Report 1008697, 2004) 46. CIGRE WG A3.10: Fault Current Limiters in Electrical Medium and High Voltage Systems, CIGRE Technical Brochure, No. 239, 2003 47. C. Abi. Samra, et. all, "Application of the new distribution class solid-state breaker," Custom Power conference, December 1997 48. Fukagawa, H.; Matsumura, T.; Ohkuma, T.; Sugimoto; S.; Genji, T.; Uezono, H.: Current State and Future Plans of Fault Current Limiting Technology in Japan, CIGRE 2000 Session, Report 13-208, Paris, 2000 49. K. Asano, Y. Sugawara, T. Hayashi, S. Ryu, R. Singh, J. Palmout, and D. Takayama, 5kV 2 th 4H-SiC SEJFET with Low RonS of 69mcm , Proc. Of the 14 International Symposium on Power Semiconductor Devices (ISPSD), June 2002, Kyoto, Japan, pp. 61 64 50. S.-H. Ryu, S. Krishnaswami, M. O'Loughlin, J. Richmond, A. Agarwal, J. Palmour, A.R. Hefner, 10-kV, 123-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC power DMOSFETs, , IEEE Electron Device Letters, vol. 25, no. 8, Aug. 2004, pp. 556 558 51. S. Sirisukprasert, Z. Xu, B. Zhang, J. Lai, and A. Huang, A High-Frequency 1.5 MVA HBridge Building Block for Cascaded Multilevel Converters using Emitter Turn-Off Thyrister, in Proc. of IEEE Applied Power Electronics Conference and Exposition, Dallas, Feb. 2002, pp. 27 32 52. R.L. Thomas, H. OBrien, W. Shaheen, and Stephen B. Bayne, Evaluation of a 7kV 80kA SGTO Module, 2005 Pulse Power Conference, Monterey CA, June 2005 53. J. F. Donlon, E.R. Motto, K. Ishii, T. Iida, Application advantages of high voltage high current IGBTs with punch through technology, in Conf. Rec. of IEEE Industry Applications Annual Meeting, Oct. 1997, pp. 955 960 9-3

EPRI Solid-State Switchgear Development R&D Roadmap

54. J.-S. Lai, L. G. Leslie, J. F. Ferrell, T. Nergaard, Characterization of HV-IGBT for HighPower Inverter Applications, to be appeared in Conf. Rec. of IEEE Industry Applications Annual Meeting, Oct. 2005 55. S.-H. Ryu, S. Krishnaswami, M. O'Loughlin, J. Richmond, A. Agarwal, J. Palmour, A.R. Hefner, 10-kV, 123-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC power DMOSFETs, , IEEE Electron Device Letters, vol. 25, no. 8, Aug. 2004, pp. 556 558. 56. S. H. Ryu, A. Agarwal, J. Richmond, J. Palmour, N. Saks, and J. Williams, 10A, 2.4 kV Power DiMOSFETs in 4H-SiC, IEEE Electron Device Letters, vol. 23, no. 6, June 2002, pp. 321 323 57. R. Singh, C. Capell, M. K. Das, L. A. Lipkin, and J. W. Palmour, Development of HighCurrent 4-H SiC ACCUFET, IEEE Trans. On Electron Devices, vol. 50, no. 2, Feb. 2003, pp. 471 478 58. J. Cooper, M. Melloch, R. Singh, A. Agarwal, and J. W. Palmour, Status and Prospect for SiC Power MOSFETs, IEEE Transactions on Electron Devices, vol. 49, no. 4, April 2002, pp. 658 663
th 59. S. B. Bayne, D. Ibitayo, Evaluation of SiC GOTs for Pulse Power Switching, 14 IEEE International Pulsed Power Conference, June 2003, pp. 135-138

60. H. OBrien, W. Shaheen, and R. Thomas, Pulse Power Switching of a 4mmx4mm SiC Thyristor, 15th IEEE International Pulsed Power Conference, Monterey CA, June 2005

9-4

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