2N5486

JFET VHF/UHF Amplifiers

NChannel Depletion
Features

PbFree Packages are Available*

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1 DRAIN

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain Gate Voltage

VDG

25

Vdc

Reverse Gate Source Voltage

VGSR

25

Vdc

ID

30

mAdc

Forward Gate Current

IG(f)

10

mAdc

Total Device Dissipation @ TC = 25C

Derate above 25C

PD

350
2.8

mW
mW/C

TJ, Tstg

65 to +150

Drain Current

Operating and Storage Junction

Temperature Range

3
GATE

2 SOURCE

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

TO92 (TO226AA)
CASE 2911
STYLE 5

MARKING DIAGRAM

2N
5486
AYWWG
G

2N5486 = Device Code

A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbFree Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
Device
2N5486
2N5486G

Package

Shipping

TO92

1000 Units / Bulk

TO92
(PbFree)

1000 Units / Bulk

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2006

October, 2006 Rev. 2

Publication Order Number:

2N5486/D

2N5486
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

Unit

V(BR)GSS

25

Vdc

IGSS

1.0
0.2

nAdc
mAdc

VGS(off)

2.0

6.0

Vdc

IDSS

8.0

20

mAdc

yfs

4000

8000

mmhos

Re(yis)

1000

mmhos

yos

75

mmhos

OFF CHARACTERISTICS
GateSource Breakdown Voltage

(IG = 1.0 mAdc, VDS = 0)

Gate Reverse Current

(VGS = 20 Vdc, VDS = 0)

(VGS = 20 Vdc, VDS = 0, TA = 100C)

Gate Source Cutoff Voltage

(VDS = 15 Vdc, ID = 10 nAdc)

ON CHARACTERISTICS
ZeroGate Voltage Drain Current

(VDS = 15 Vdc, VGS = 0)

SMALL SIGNAL CHARACTERISTICS

Forward Transfer Admittance

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)

Input Admittance

(VDS = 15 Vdc, VGS = 0, f = 400 MHz)

Output Admittance

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)

Output Conductance

(VDS = 15 Vdc, VGS = 0, f = 400 MHz)

Re(yos)

100

mmhos

Forward Transconductance

(VDS = 15 Vdc, VGS = 0, f = 400 MHz)

Re(yfs)

3500

mmhos

Input Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

5.0

pF

Reverse Transfer Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Crss

1.0

pF

Output Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Coss

2.0

pF

COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS

grs , REVERSE TRANSADMITTANCE (mmhos)
brs , REVERSE SUSCEPTANCE (mmhos)

gis, INPUT CONDUCTANCE (mmhos)

bis, INPUT SUSCEPTANCE (mmhos)

(VDS = 15 Vdc, Tchannel = 25C)

30
20
bis @ IDSS

10
7.0
5.0
3.0

gis @ IDSS

2.0
gis @ 0.25 IDSS
1.0
0.7
0.5
0.3

bis @ 0.25 IDSS

10

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5

0.25 IDSS

0.3
0.2
0.1
0.07
0.05

grs @ IDSS, 0.25 IDSS

10

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 2. Reverse Transfer Admittance (yrs)

20

10

10
7.0
5.0

gos, OUTPUT ADMITTANCE (mhos)

bos, OUTPUT SUSCEPTANCE (mhos)

gfs, FORWARD TRANSCONDUCTANCE (mmhos)

|b fs|, FORWARD SUSCEPTANCE (mmhos)

Figure 1. Input Admittance (yis)

20

gfs @ IDSS
gfs @ 0.25 IDSS

3.0
2.0
1.0
0.7
0.5

|bfs| @ IDSS
|bfs| @ 0.25 IDSS

5.0
bos @ IDSS and 0.25 IDSS

2.0
1.0
0.5
0.2

gos @ IDSS

0.1
0.05
gos @ 0.25 IDSS

0.02

0.3
0.2

0.01
10

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

10

Figure 3. Forward Transadmittance (yfs)

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 4. Output Admittance (yos)

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2

2N5486
COMMON SOURCE CHARACTERISTICS
SPARAMETERS
(VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30

20

10

0
1.0

40

350

340

330
320

40

310

50

20

10

310
900

500

ID = IDSS

800
60

300

400
500

0.7

600
0.6

290

400
80

280

900

300
0.1

500

70

290

0.2
700

600

700
800

700
800

90

320

ID = IDSS, 0.25 IDSS

600

80

330

0.4

300

70

340

0.3

400

50
0.8

350

300

200

60

200

100
0.9

30

ID = 0.25 IDSS

100

300

280

0.0

200

270

90

100

260

100

260

110

250

110

250

120

240

120

240

130

230

130

230

140

220

140

220

900

150

160

170

180

190

200

210

150

160

170

Figure 5. S11s
30

20

10

350

340

330

30

20

10

80
90

700

110

0.4

800
600

100

210

0
350
340
330
100 200
I
=
0.25
IDSS
D
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8

310

50

300

60

290

70

280

80

270

90

270

260

100

260

250

110

250

240

120

240

230

130

230

220

140

220

320

310

300
0.7

290

900
700

600

200

40

0.5
60
900

190

320

0.6
50

800

180

Figure 6. S12s

40

70

270

100

500

0.3
ID = 0.25 IDSS
500

0.3
100

400

400

280

0.6

300

200

0.4

100

0.5

300
120

ID = IDSS

200

130
0.6

140
150

160

170

180

190

200

210

150

Figure 7. S21s

160

170

180

190

Figure 8. S22s
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3

200

210

2N5486
COMMON GATE CHARACTERISTICS

grg , REVERSE TRANSADMITTANCE (mmhos)

brg , REVERSE SUSCEPTANCE (mmhos)

ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25C)

gig, INPUT CONDUCTANCE (mmhos)

big, INPUT SUSCEPTANCE (mmhos)

20
10
7.0
5.0

gig @ IDSS

3.0

grg @ 0.25 IDSS

2.0
1.0
0.7
0.5

big @ IDSS
big @ 0.25 IDSS

0.3
0.2

10

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

0.5
0.3

0.1
0.07
0.05
0.25 IDSS

0.03
0.02
0.01

0.007
0.005

500 700 1000

brg @ IDSS

0.2

gig @ IDSS, 0.25 IDSS

10

10
7.0
5.0

gfg @ IDSS

3.0

gfg @ 0.25 IDSS

2.0
1.0
0.7
0.5
bfg @ IDSS

0.3

brg @ 0.25 IDSS

0.2

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 10. Reverse Transfer Admittance (yrg)

gog, OUTPUT ADMITTANCE (mmhos)

bog, OUTPUT SUSCEPTANCE (mmhos)

gfg , FORWARD TRANSCONDUCTANCE (mmhos)

bfg , FORWARD SUSCEPTANCE (mmhos)

Figure 9. Input Admittance (yig)

20

1.0
0.7
0.5

bog @ IDSS, 0.25 IDSS

0.3
0.2
0.1
0.07
0.05

gog @ IDSS

0.03
0.02
gog @ 0.25 IDSS

0.1

0.01
10

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

10

Figure 11. Forward Transfer Admittance (yfg)

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 12. Output Admittance (yog)

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4

2N5486
COMMON GATE CHARACTERISTICS
SPARAMETERS
(VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30

20

10

350

340

330

30

0.7

40

100

310

50

300

60

290

70

280

80

350

340

330

0.04

200

300

320

0.03

400

100

500
200

ID = IDSS
0.4

310

600

300

0.5
60
70

40

10

ID = 0.25 IDSS

0.6
50

320

20

0.02

700

400
500

300

800

600
900

0.01

290

700
80

800

0.3

900

90

90

270

100

ID = IDSS
110

110

250

270

500
600

100

260

280

0.0
100

700

600
700

260

ID = 0.25 IDSS

250

0.01

800
120

120

240

240

800

0.02
900

130

130

230

230
900

140

140

220
150

160

170

180

190

200

210

20

10

350

150

160

170

340

330

30

20

10

40

320

190

0
1.5
1.0

350
300

200

210

340

330

500

200

100

700
600
800

0.9

ID = IDSS

320

400

100

0.4
50

180

Figure 14. S12g

0.5

40

220

0.04

Figure 13. S11g

30

0.03

900

310

50

300

60

290

70

280

80

270

90

270

100

260

100

260

110

250

110

250

120

240

120

240

130

230

130

230

140

220

140

220

100

ID = IDSS, 0.25 IDSS

0.3

0.8

60
0.2

70

310

ID = 0.25 IDSS

80
0.1

900

90

300
0.7

290
280

0.6

900

150

160

170

180

190

200

210

150

Figure 15. S21g

160

170

180

190

Figure 16. S22g

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5

200

210

2N5486
PACKAGE DIMENSIONS

TO92 (TO226AA)
CASE 2911
ISSUE AL

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

R
P
L
SEATING
PLANE

DIM
A
B
C
D
G
H
J
K
L
N
P
R
V

X X
G

H
V

C
SECTION XX

N
N

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500

0.250

0.080
0.105
0.100
0.115

0.135

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70

6.35

2.04
2.66

2.54
2.93

3.43

STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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2N5486/D