TP0610L/T, VP0610L/T, BS250

Vishay Siliconix

P-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY
Part Number
TP0610L TP0610T VP0610L VP0610T BS250

V(BR)DSS Min (V)

60 60 60 60 45

rDS(on) Max (W)

10 @ VGS = 10 V 10 @ VGS = 10 V 10 @ VGS = 10 V 10 @ VGS = 10 V 14 @ VGS = 10 V

VGS(th) (V)
1 to 2.4 1 to 2.4 1 to 3.5 1 to 3.5 1 to 3.5

ID (A)
0.18 0.12 0.18 0.12 0.18

FEATURES
D D D D D High-Side Switching Low On-Resistance: 8 W Low Threshold: 1.9 V Fast Switching Speed: 16 ns Low Input Capacitance: 15 pF

BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer

APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control

TO-226AA (TO-92)
S G 1

Device Marking Front View TP0610L S TP 0610L xxll

TO-92-18RM (TO-18 Lead Form)

D G 1 Device Marking Front View BS250 2 S BS 250 xxll S = Siliconix Logo xxll = Date Code G 1 3 S 2 D

TO-236 (SOT-23)
Marking Code: TP0610T: TOwll VP0610T: VOwll w = Week Code lL = Lot Traceability Top View TP0610T VP0610T

3 Top View TP0610L VP0610L

VP0610L S VP 0610L xxll

3 Top View BS250

S = Siliconix Logo xxll = Date Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. For applications information see AN804. Document Number: 70209 S-41260Rev. H, 05-Jul-04 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C

Symbol
VDS VGS ID IDM PD RthJA TJ, Tstg

TP0610L
60 "30 0.18 0.11 0.8 0.8 0.32 156

TP0610T
60 "30 0.12 0.07 0.4 0.36 0.14 350

VP0610L
60 "30 0.18 0.11 0.8 0.8 0.32 156 55 to 150

VP0610T
60 "30 0.12 0.07 0.4 0.36 0.14 350

BS250
45 "25 0.18

Unit
V

A 0.83 150

W _C/W _C

TP0610L/T, VP0610L/T, BS250

Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
TP0610L/T VP0610L/T BS250

Parameter Static
Drain Source Drain-Source Breakdown Voltage Gate-Threshold Voltage

Symbol

Test Conditions

Typa

Min

Max

Min

Max

Min

Max

Unit

V(BR)DSS VGS(th)

VGS = 0 V, ID = 10 mA VGS = 0 V, ID = 100 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "20 V

70

60

60 45 V 3.5

1.9

2.4 "10 "50

3.5 "10

Gate-Body y Leakage g

IGSS

VDS = 0 V, VGS = "20 V, TJ = 125_C VDS = 0 V, VGS = "15 V VDS = 48 V, VGS = 0 V

nA "20 1 200 0.5 mA

1 200

Zero G Gate Voltage Drain Current

IDSS

VDS = 48 V, VGS = 0 V, TJ = 125_C VDS = 25 V, VGS = 0 V VDS = 10 V, VGS = 4.5 V 180 L Suffix T Suffix 11 L Suffix L Suffix T Suffix L Suffix T Suffix 8 15 6.5 20 90 1.1 80 60 750 50

On-State O S Drain Currentb

ID(on)

VDS = 10 V, V VGS = 10 V VGS = 4.5 V, ID = 25 mA

600 220 25 10 20 10 10 20 10 14

mA

Drain-Source On-Resistanceb

rDS(on) DS( )

VGS = 10 V, ID = 0.5 A VGS = 10 V, ID = 0.5 A, TJ = 125_C VGS = 10 V, ID = 0.2 A VDS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.1 A IS = 0.5 A, VGS = 0 V

Forward Transconductanceb Diode Forward Voltage

gfs f VSD

70

mS V

Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V f = 1 MHz 15 10 3 60 25 5 60 25 5 pF

Switchingc
Turn-On Time Turn-Off Time tON tOFF VDD = 25 V, RL = 133 W ID ^ 0.18 A, VGEN = 10 V, Rg = 25 W 8 8 10 10 ns

Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature.

VPDS06

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Document Number: 70209 S-41260Rev. H, 05-Jul-04

TP0610L/T, VP0610L/T, BS250

Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0 VGS = 10 V 7V 0.8 I D Drain Current (A) I D Drain Current (mA) 8V 900 25_C 600 125_C 1200 TJ = 55_C

Transfer Characteristics

0.6

6V

0.4 5V 0.2 4V 0.0 0 1 2 3 4 5 VDS Drain-to-Source Voltage (V)

300

0 0 2 4 6 8 10 VGS Gate-to-Source Voltage (V) 40 VGS = 0 V

On-Resistance vs. Drain Current

20

Capacitance

r DS(on) On-Resistance ( W )

16

VGS = 4.5 V C Capacitance (pF)

32 Ciss 24

12 VGS = 5 V 8 VGS = 10 V

16 Coss 8 Crss

0 0 200 400 600 800 1000 ID Drain Current (mA)

0 0 5 10 15 20 25

VDS Drain-to-Source Voltage (V)

15 V GS Gate-to-Source Voltage (V) ID = 500 mA 12

Gate Charge
1.8 1.5 VDS = 30 V rDS(on) On-Resiistance (Normalized) VDS = 48 V 1.2 0.9 0.6 0.3 0.0 50

On-Resistance vs. Junction Temperature

VGS = 10 V @ 500 mA

VGS = 4.5 V @ 25 mA

0 0.0

0.3

0.6

0.9

1.2

1.5

1.8

25

25

50

75

100

125

150

Qg Total Gate Charge (nC)

TJ Junction Temperature (_C)

Document Number: 70209 S-41260Rev. H, 05-Jul-04

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TP0610L/T, VP0610L/T, BS250

Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
1000 VGS = 0 V r DS(on) On-Resistance ( W ) 8 ID = 500 mA 10

On-Resistance vs. Gate-Source Voltage

I S Source Current (A)

100 TJ = 125_C

10

TJ = 25_C TJ = 55_C

ID = 200 mA

1 0.00 0.3 0.6 0.9 1.2 1.5 VSD Source-to-Drain Voltage (V)

0 0 2 4 6 8 10 VGS Gate-to-Source Voltage (V)

Threshold Voltage Variance Over Temperature

0.5 0.4 V GS(th) Variance (V) 0.3 Power (W) 0.2 0.1 0.0 0.1 0.2 0.3 50 0.5 0 25 0 25 50 75 100 125 150 0.01 2 1.5 ID = 250 mA 3 2.5

Single Pulse Power, Junction-to-Ambient

TA = 25_C

0.1

1 Time (sec)

10

100

600

TJ Junction Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2 Normalized Effective Transient Thermal Impedance 1

Duty Cycle = 0.5

0.2 0.1 0.1 0.05 0.02

Notes: PDM t1

t2 1. Duty Cycle, D =

2. Per Unit Base = RthJA = 350_C/W

t1 t2

Single Pulse 0.01 104 103 102 101 1 Square Wave Pulse Duration (sec)

3. TJM TA = PDMZthJA(t) 4. Surface Mounted

10

100

600

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Document Number: 70209 S-41260Rev. H, 05-Jul-04

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Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 Revision: 18-Jul-08

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