VISHAY

SFH615A / SFH6156
Vishay Semiconductors

Optocoupler, High Reliability, 5300 VRMS

Features
Excellent CTR Linearity Depending on Forward Current Isolation Test Voltage, 5300 VRMS Fast Switching Times Low CTR Degradation Low Coupling Capacitance Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

A 1 C 2
17448

4 3

C E

Agency Approvals
UL1577, File No. E52744 System Code H or J, Double Protection DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1

Order Information
Part SFH615A-1 SFH615A-2 SFH615A-3 SFH615A-4 SFH6156-1 SFH6156-2 SFH6156-3 SFH6156-4 SFH615A-1X006 SFH615A-1X007 SFH615A-2X006 SFH615A-2X007 SFH615A-2X009 SFH615A-3X006 SFH615A-3X007 SFH615A-3X008 SFH615A-3X009 SFH615A-4X006 SFH615A-4X007 SFH615A-4X008 SFH615A-4X009 Remarks CTR 40 - 80 %, DIP-4 CTR 63 - 125 %, DIP-4 CTR 100 - 200 %, DIP-4 CTR 160 - 320 %, DIP-4 CTR 40 - 80 %, SMD-4 CTR 63 - 125 %, SMD-4 CTR 100 - 200 %, SMD-4 CTR 160 - 320 %, SMD-4 CTR 40 - 80 %, DIP-4 400 mil (option 6) CTR 40 - 80 %, SMD-4 (option 7) CTR 63 - 125 %, DIP-4 400 mil (option 6) CTR 63 - 125 %, SMD-4 (option 7) CTR 63 - 125 %, SMD-4 (option 9) CTR 100 - 200 %, DIP-4 400 mil (option 6) CTR 100 - 200 %, SMD-4 (option 7) CTR 100 - 200 %, SMD-4 (option 8) CTR 100 - 200 %, SMD-4 (option 9) CTR 160 - 320 %, DIP-4 400 mil (option 6) CTR 160 - 320 %, SMD-4 (option 7) CTR 160 - 320 %, SMD-4 (option 8) CTR 160 - 320 %, SMD-4 (option 9)

Applications
Switchmode power supply Telecom Battery powered equipment

Description
The SFH615A (DIP) and SFH6156 (SMD) feature a variety of transfer ratios, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change.

For additional information on the available options refer to Option Information. See TAPE AND REEL Section for 4-pin optocouplers T0 with 90 rotation.

Document Number 83671 Rev. 1.6, 20-Jul-04

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SFH615A / SFH6156
Vishay Semiconductors Absolute Maximum Ratings

VISHAY

Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Input
Parameter Reverse voltage DC Forward current Surge forward current Power dissipation tp 10 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 Unit V mA A mW

Output
Parameter Collector-emitter voltage Emitter-collector voltage Collector current tp 1.0 ms Power dissipation Test condition Symbol VCE VCEO IC IC Pdiss Value 70 7.0 50 100 150 Unit V V mA mA mW

Coupler
Parameter Isolation test voltage (between emitter and detector, refered to climate DIN 40046, part 2, Nov. 74 Creepage Clearance Insulation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Junction temperature Soldering temperature max. 10 s, Dip soldering distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tj Tsld t = 1.0 s Test condition Symbol VISO Value 5300 Unit VRMS

7.0 7.0 0.4 175 1012 1011 - 55 to + 150 - 55 to + 100 100 260

mm mm mm

C C C C

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Document Number 83671 Rev. 1.6, 20-Jul-04

VISHAY

SFH615A / SFH6156
Vishay Semiconductors
Figure 1. Permissible Power Dissipation vs. Ambient Temperature

200

P totPower Dissipation (mW)

150 Phototransistor

100

50

Diode

0 0
18483

25

50

75

100

125

150

Tamb Ambient Temperature ( qC )

Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Input
Parameter Forward voltage Reverse current Capacitance Thermal resistance Test condition IF = 60mA VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF IR CO Rthja Min Typ. 1.25 0.01 13 750 Max 1.65 10 Unit V A pF K/W

Output
Parameter Collector-emitter capacitance Thermal resistance Collector-emitter leakage current VCE = 10 V SFH615A-1 SFH6156-1 SFH615A-2 SFH6156-2 SFH615A-3 SFH6156-3 SFH615A-4 SFH6156-4 Test condition VCE = 5.0 V, f = 1.0 MHz Part Symbol CCE Rthja ICEO ICEO ICEO ICEO Min Typ. 5.2 500 2.0 2.0 5.0 5.0 50 50 100 100 Max Unit pF K/W nA nA nA nA

Coupler
Parameter Collector-emitter saturation voltage Coupling capacitance Test condition IF = 10 mA, IC = 2.5 mA Symbol VCEsat CC Min Typ. 0.25 0.4 Max 0.4 Unit V pF

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SFH615A / SFH6156
Vishay Semiconductors Current Transfer Ratio
Parameter IC/IF Test condition IF = 10 mA, VCE = 5.0 V Part SFH615A-1 SFH6156-1 SFH615A-2 SFH6156-2 SFH615A-3 SFH6156-3 SFH615A-4 SFH6156-4 IF = 1.0 mA, VCE = 5.0 V SFH615A-1 SFH6156-1 SFH615A-2 SFH6156-2 SFH615A-3 SFH6156-3 SFH615A-4 SFH6156-4 Symbol CTR CTR CTR CTR CTR CTR CTR CTR Min 40 63 100 160 13 22 34 56 30 45 70 90 Typ.

VISHAY

Max 80 125 200 320

Unit % % % % % % % %

Switching Characteristics
Switching Non-saturated Parameter Rise Time Fall Time Turn-on time Turn-off time Cut-off frequency Parameter Rise time Test condition IF = 10 mA, VCC = 5.0 V, TA = 25 C, RL = 75 IF = 10 mA, VCC = 5.0 V, TA = 25 C, RL = 75 IF = 10 mA, VCC = 5.0 V, TA = 25 C, RL = 75 IF = 10 mA, VCC = 5.0 V, TA = 25 C, RL = 75 IF = 10 mA, VCC = 5.0 V, TA = 25 C, RL = 75 Symbol tr tf ton toff fctr Min Typ. 2.0 2.0 3.0 2.3 250 Max Unit s s s s kHz

Switching Saturated Test condition VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 20 mA VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 10 mA Part SFH615A-1 SFH6156-1 SFH615A-2 SFH6156-2 SFH615A-3 SFH6156-3 VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 5.0 mA Fall time VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 20 mA VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 10 mA SFH615A-4 SFH6156-4 SFH615A-1 SFH6156-1 SFH615A-2 SFH6156-2 SFH615A-3 SFH6156-3 VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 5.0 mA Turn-on time VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 20 mA VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 10 mA SFH615A-4 SFH6156-4 SFH615A-1 SFH6156-1 SFH615A-2 SFH6156-2 SFH615A-3 SFH6156-3 VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 5.0 mA SFH615A-4 SFH6156-4 Symbol tr tr tr tr tf tf tf tf ton ton ton ton Min Typ. 2.0 3.0 3.0 4.6 11 14 14 15 3.0 4.2 4.2 6.0 Max Unit s s s s s s s s s s s s

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Document Number 83671 Rev. 1.6, 20-Jul-04

VISHAY
Parameter Turn-off time Test condition VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 20 mA VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 10 mA Part SFH615A-1 SFH6156-1 SFH615A-2 SFH6156-2 SFH615A-3 SFH6156-3 VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 5.0 mA SFH615A-4 SFH6156-4

SFH615A / SFH6156
Vishay Semiconductors
Symbol toff toff toff toff Min Typ. 18 23 23 25 Max Unit s s s s

Typical Characteristics (Tamb = 25 C unless otherwise specified)

10 3 % 5

IF = 10 mA, VCE = 5.0 V 4 3 2 1

IF

RL = 75 VCC = 5 V IC

IC IF 10 2 5

47
101 25
isfh615a_01 isfh615a_01

25 TA

50

75

Figure 2. Linear Operation ( without Saturation)

Figure 4. Current Transfer Ratio (typical) vs. Temperature

30 mA IF=14 mA 12 mA

IF

1 VCC = 5 V

IC

20

10 mA 8.0 mA

10

6.0 mA 4.0 mA

47
0 0
isfh615a_02 isfh615a_04

1.0 mA 5 VCE 10

2.0 mA V 15

Figure 3. Switching Operation (with Saturation)

Figure 5. Output Characteristics (typ.) Collector Current vs. Collector-Emitter Voltage

Document Number 83671 Rev. 1.6, 20-Jul-04

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SFH615A / SFH6156
Vishay Semiconductors

VISHAY

1.2 V 1.1 25 50 75

VF

1.0

0.9

10 1

10 0

IF

101

mA

10 2

isfh615a_05

Figure 6. Diode Forward Voltage (typ.) vs. Forward Current

20 pF 15 C 10 C CE 5 f = 1.0 MHz

0 10 2
isfh615a_06

10 1

10 0 Ve

101

102

Figure 7. Transistor Capacitance (typ.) vs. Collector-Emitter Voltage

10 4 mA 5 10 3 5 10 2 5 10 1 10 5
isfh615a_07

IF

D=0 0.005 0.01 0.02 0.05 0.1

D=

tp T

tp IF T

0.2 0.5 DC 10 4 10 3

Pulse cycle D = parameter 10 2 tp 10 1 10 0 s 10 1

Figure 8. Permissible Pulse Handling Capability Forward Current vs. Pulse Width

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Document Number 83671 Rev. 1.6, 20-Jul-04

VISHAY
Package Dimensions in Inches (mm)

SFH615A / SFH6156
Vishay Semiconductors

1 pin one ID

.255 (6.48) .268 (6.81)

ISO Method A

.179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .130 (3.30) .150 (3.81) 4 typ. .018 (.46) .022 (.56) 10 .020 (.508 ) .035 (.89) .050 (1.27) .100 (2.54) 39 .300 (7.62) typ.

.230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30)

i178027

.008 (.20) .012 (.30)

Package Dimensions in Inches (mm)

SMD
pin one ID .255 (6.48) .268 (6.81)

.030 (.76) .100 (2.54) R .010 (.25) .070 (1.78) .315 (8.00) min .435 (11.05) .060 (1.52)

.179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .130 (3.30) .150 (3.81)
ISO Method A

.375 (9.52) .305 (10.03) .296 (7.52) .312 (7.90) 10 .010 (.25) typ.

i178029

4 typ. 1.00 (2.54)typ. .050 (1.27) typ.

.0098 (.249) .035 (.102) Lead coplanarity .004 max.

.315 (8.00) min. .020 (.508) .040 (1.02)

37

Document Number 83671 Rev. 1.6, 20-Jul-04

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SFH615A / SFH6156
Vishay Semiconductors

VISHAY

Option 9
.375 (9.53) .395 (10.03) .300 (7.62)ref.

0040 (.102) 0098 (.249)

.012 (.30) typ.

.020 (.51) .040 (1.02)

18486

.315 (8.00) min.

15 max.

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Document Number 83671 Rev. 1.6, 20-Jul-04

VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to

SFH615A / SFH6156
Vishay Semiconductors

1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 83671 Rev. 1.6, 20-Jul-04

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