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Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description

Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D 2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D 2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF540NL) is available for low- profile applications.

Absolute Maximum Ratings

PD - 91342B

IRF540NS

IRF540NL

HEXFET ® Power MOSFET

D G S
D
G
S

V DSS = 100V

R DS(on) = 44m

I D = 33A

D 2 Pak IRF540NS TO-262 IRF540NL

D 2 Pak

IRF540NS

D 2 Pak IRF540NS TO-262 IRF540NL

TO-262

IRF540NL

 

Parameter

 

Max.

Units

I D @ T C = 25°C

Continuous Drain Current, V GS @ 10V

 

33

 

I D @ T C = 100°C

Continuous Drain Current, V GS @ 10V

 

23

A

 

I DM

Pulsed Drain Current

 

110

P

D @T C = 25°C

Power Dissipation

 

130

W

 

Linear Derating Factor

 

0.87

W/°C

V

GS

Gate-to-Source Voltage

 

± 20

V

 

I AR

Avalanche Current

 

16

A

E

AR

Repetitive Avalanche Energy

 

13

mJ

dv/dt

Peak Diode Recovery dv/dt

 

7.0

V/ns

T

J

Operating Junction and

-55

to + 175

 

T

STG

Storage Temperature Range

 

°C

 

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

 

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

 

Thermal Resistance

 

Parameter

Typ.

Max.

Units

R

θJC

Junction-to-Case

–––

1.15

°C/W

R

θJA

Junction-to-Ambient (PCB mount)**

–––

40

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1

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

@ T J = 25°C (unless otherwise specified)   Parameter Min. Typ. Max. Units  
 

Parameter

Min.

Typ.

Max.

Units

 

Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

–––

V

V

GS = 0V, I D = 250µA

V (BR)DSS /T J

Breakdown Voltage Temp. Coefficient

–––

0.12

–––

V/°C

Reference to 25°C, I D = 1mA

R

DS(on)

Static Drain-to-Source On-Resistance

–––

–––

44

m

V

GS = 10V, I D = 16A

V

GS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

V

DS = V GS , I D = 250µA

g

fs

Forward Transconductance

21

–––

–––

S

V

DS = 50V, I D = 16A

I

Drain-to-Source Leakage Current

–––

–––

25

µA

V

DS = 100V, V GS = 0V

 

DSS

–––

–––

250

V

DS = 80V, V GS = 0V, T J = 150°C

I

Gate-to-Source Forward Leakage

–––

–––

100

nA

V

GS = 20V

 

GSS

Gate-to-Source Reverse Leakage

–––

–––

-100

V

GS = -20V

Q

g

Total Gate Charge

–––

–––

71

 

I D = 16A

 

Q

gs

Gate-to-Source Charge

–––

–––

14

nC

V

DS = 80V

Q

gd

Gate-to-Drain ("Miller") Charge

–––

–––

21

V

GS = 10V, See Fig. 6 and 13

t

d(on)

Turn-On Delay Time

–––

11

–––

 

V

DD = 50V

t

r

Rise Time

–––

35

–––

ns

I D = 16A

 

t

d(off)

Turn-Off Delay Time

–––

39

–––

R

G = 5.1

t

f

Fall Time

–––

35

–––

V

GS = 10V, See Fig. 10

L

D

Internal Drain Inductance

–––

–––

 

Between lead, 6mm (0.25in.)

D G
D
G

L

S

Internal Source Inductance

–––

–––

nH

from package and center of die contact

 

S

C

iss

Input Capacitance

–––

1960

–––

 

V

GS = 0V

C

oss

Output Capacitance

–––

250

–––

V

DS = 25V

C

rss

Reverse Transfer Capacitance

–––

40

–––

pF

ƒ

= 1.0MHz, See Fig. 5

E

AS

Single Pulse Avalanche Energy

–––

700

185

mJ

I AS = 16A, L = 1.5mH

 

Source-Drain Ratings and Characteristics

 
 

Parameter

Min.

Typ.

Max.

Units

 

Conditions

I

S

Continuous Source Current (Body Diode)

–––

–––

33

MOSFET symbol showing the integral reverse p-n junction diode.

D G S
D
G
S

I

SM

Pulsed Source Current (Body Diode)

–––

–––

110

V

SD

Diode Forward Voltage

–––

–––

1.2

V

T

J = 25°C, I S = 16A, V GS = 0V

t

rr

Reverse Recovery Time

–––

115

170

ns

T

J = 25°C, I F = 16A

Q

rr

Reverse Recovery Charge

–––

505

760

nC

di/dt = 100A/µs

 

t

on

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )

Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting T J = 25°C, L =1.5mH R G = 25, I AS = 16A. (See Figure 12)

I SD

≤ 16A di/d 340A/µs, V DD V (BR)DSS ,

T J 175°C Pulse width 400µs; duty cycle 2%.

This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to T J = 175°C . Uses IRF540N data and test conditions. **When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994

1000 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V

1000 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
100
10
4.5V
20µs
PULSE WIDTH
T
J
=
25
°
C
1
0.1
1
10
100
I
, Drain-to-Source Current (A)
D

V DS

, Drain-to-Source Voltage (V)

1000 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
100
4.5V
10
20µs
PULSE WIDTH
T
=
175
°
J
C
1
0.1
1
10
100
I
, Drain-to-Source Current (A)
D

V DS

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics 3.5 I = 33A D 3.0 2.5 2.0 1.5 1.0
Fig 2. Typical Output Characteristics
3.5
I
= 33A
D
3.0
2.5
2.0
1.5
1.0
0.5
= 10V
V GS
0.0
1000 T = 25 ° C J 100 T = 175 ° C J V
1000
T
= 25
°
C
J
100
T
= 175
°
C
J
V
DS
= 50V
20µs PULSE
WIDTH
10
4.0
5.0
6.0
7.0
8.0
9.0
V
, Gate-to-Source Voltage (V)
GS
I
, Drain-to-Source Current (A)
D
R
, Drain-to-Source On Resistance
DS(on)
(Normalized)

-60 -40 -20

0

20

40

60

80 100 120 140 160 180

T

J

, Junction Temperature (

° C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

3000 V = 0V, f = 1MHz GS C = C + C C SHORTED
3000
V
= 0V,
f = 1MHz
GS
C
= C
+
C
C
SHORTED
iss
gs
gd ,
ds
C
= C
rss
gd
2500
C
= C
+
C
oss
ds
gd
C
iss
2000
1500
1000
C
oss
500
C
rss
0
1
10
100
C, Capacitance (pF)

V DS

, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

1000 100 T = 175 ° C J 10 T = 25 ° C J
1000
100
T
= 175
°
C
J
10
T
= 25
°
C
J
1
V
= 0 V
GS
0.1
0.2
0.6
1.0
1.4
1.8
I
, Reverse Drain Current (A)
SD

V SD

,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

(V) Fig 7. Typical Source-Drain Diode Forward Voltage 20 I D = 16A V = 80V
20 I D = 16A V = 80V DS V = 50V DS 16 V
20
I
D
= 16A
V
= 80V
DS
V
= 50V
DS
16
V
= 20V
DS
12
8
4
FOR TEST CIRCUIT
SEE FIGURE
13
0
0
20
40
60
80
V
, Gate-to-Source Voltage (V)
GS

Q

G , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

1000 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100µsec 10 1msec 1
1000
OPERATION
IN
THIS AREA
LIMITED BY
R
DS (on)
100
100µsec
10
1msec
1
T
= 25°C
A
10msec
T
= 175°C
J
Single Pulse
0.1
1
10
100
1000
I D
)A(tnerruCecruoS-ot-niarD,

V DS , Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

35 30 25 20 15 10 5 0 25 50 75 100 125 150 175
35 30 25 20 15 10 5 0 25 50 75 100 125 150 175
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
T
C , Case Temperature
(
° C)
I
, Drain Current (A)
D

Fig 9. Maximum Drain Current Vs. Case Temperature

≤ 1 ≤ 0.1 %
≤ 1
≤ 0.1 %

+ -

V DS 90% 10% V GS t d(on) t r t d(off) t f
V DS
90%
10%
V GS
t d(on)
t r
t d(off)
t f

10 1 D = 0.50 0.20 0.10 P DM 0.1 0.05 t 1 0.02 SINGLE
10
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
t
1
0.02
SINGLE PULSE
t
0.01
(THERMAL RESPONSE)
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
=
P
x
Z
+
T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Thermal Response (Z
)
thJC

t 1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

15V L DRIVER V DS D.U.T R G + - V DD I AS 20V
15V
L
DRIVER
V DS
D.U.T
R G
+
-
V DD
I AS
20V
0.01Ω
t p

A

V (BR)DSS t p I AS
V (BR)DSS
t p
I AS
Q G Q GS Q GD V G Charge
Q G
Q GS
Q GD
V G
Charge

t p A V (BR)DSS t p I AS Q G Q GS Q GD V
400 I D TOP 6.5A 11.3A BOTTOM 16A 300 200 100 0 25 50 75
400
I
D
TOP
6.5A
11.3A
BOTTOM
16A
300
200
100
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (
° C)
J
E
, Single Pulse Avalanche Energy (mJ)
AS

Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF + V DS D.U.T. -
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V DS
D.U.T.
-
V
GS
3mA
I G
I D

Current Sampling Resistors

+ • • • - + - + - • • • + - Driver

+ • • • - + - + - • • •
+
-
+
-
+
-

+

-

Driver Gate Drive P.W. Period D = P.W. Period V =10V GS D.U.T. I SD
Driver Gate Drive
P.W.
Period
D =
P.W.
Period
V
=10V
GS
D.U.T. I SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V DS Waveform
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
Ripple ≤ 5%
SD

For N-channel HEXFET ® power MOSFETs

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TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information OR www.irf.com

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information OR www.irf.com 9

TO-262 Part Marking Information

OR
OR

TRR

TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 0.368 (.0145) 3.90 (.153) 0.342
1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 0.368 (.0145) 3.90 (.153) 0.342
1.60 (.063)
1.50 (.059)
1.60
(.063)
4.10
(.161)
1.50
(.059)
0.368
(.0145)
3.90
(.153)
0.342
(.0135)
FEED DIRECTION
1.85
(.073)
11.60
(.457)
1.65
(.065)
11.40
(.449)
24.30
(.957)
15.42 (.609)
23.90
(.941)
15.22 (.601)
TRL
1.75 (.069)
10.90
(.429)
1.25
(.049)
4.72
(.136)
10.70
(.421)
4.52
(.178)
16.10
(.634)
15.90
(.626)
FEED DIRECTION
13.50
(.532)
27.40
(1.079)
12.80
(.504)
23.90
(.941)
4
330.00
60.00 (2.362)
(14.173)
MIN.
MAX.
30.40 (1.197)
NOTES :
MAX.
1. COMFORMS TO EIA-418.
26.40
(1.039)
4
2. CONTROLLING DIMENSION: MILLIMETER.
24.40
(.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site.

Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/05