EE 3.

133 Solid State Electronics

Instructor: Dr. Shaista Shahzada

Semester: Fall 2004 Credit hours: 3 cr. Hrs Text book: Solid State Electronic Devices by Ben G. Streetman and Sanjay Banerjee, fifth edition, prentice-hall publishers. Ref. books: 1. 2. 3. 4. 5. 6. Introduction to Solid State Physics by Kittle Introduction to Quantum Mechanics by Liboff Semiconductor Devices: Physics and Technology by S. M. Sze, 2 nd edition, John-Wiley publishers Fundamentals of semiconductor Fabrication by Gary S. May and S. M Sze, John-Wiley corporation Semiconductor Devices: Modeling and Technology by N. D. Gupta and A. D. Gupta, prentice-hall India. Principles of Electronic Materials and Devices by S. O. Kasap, 2 nd edition, Tata Mc-Graw hill.

Reading assignment: Reading assignment for the relevant week must be completed at the beginning of every week. Detailed Course Outline: Week No. 1 Topics covered Crystal Properties and growth of materials, introduction to Atomic models and exp. observations The Bohr Model & introduction to quantum mechanics The hydrogen atom, periodic table, bonding forces and energy bands in solids. Charge carriers in semiconductors, carrier concentrations Temperature Text Book Ch # 1, 2.1 Reading assignment Ch # 1, 2.1, 2.2

2 3

2.3, 2.4.1, 2.4.2, 2.4.3, 2.4.4 2.5, 3.1.1, 3.1.2, 3.1.3, 3.1.4, 3.1.5 3.2.1, 3.2.3, 3.2.5, 3.3.2 3.3.3,

2.3, 2.4.1, 2.4.2, 2.4.3, 2.4.4 2.5, 3.1.1, 3.1.2, 3.1.3, 3.1.4, 3.1.5 3.2.2, 3.2.5, 3.4.1, 3.2.3, 3.3.1, 3.4.2,

3.2.2, 3.2.1, 3.2.4, 3.2.4, 3.3.1, 3.3.2 3.4.1, 3.3.3,

8 9

10

11

12

dependence of carrier concentration, drift of carriers in electric and magnetic fields Optical absorption, Luminescence, carrier life time and photoconductivity, photoconductive devices Diffusion processes, diffusion and drift of carriers; built-in fields, continuity equation, steady state carrier injection Junctions, fabrication of junctions, equilibrium conditions Forward and reverse bias junctions, steady state conditions and reverse bias breakdown, switching diodes Metal-Semiconductor junctions, schottky barriers, heterojuctions Field effect transistors, Transistor operation, the junction FET, The Metal-Semiconductor FET The metal-insulatorsemiconductor FET, basic operation and fabrication, The ideal MOS capacitor threshold voltage, MOS capacitancevoltage analysis, output characteristics of MOSFET, transfer characteristics, mobility models, short

3.4.2, 3.4.3, 3.4.3, 3.4.4, 3.4.5 3.4.4, 3.4.5 4.1, 4.2.2, 4.3.2, 4.3.4 4.4.1, 4.4.3, 4.4.6 4.2.1, 4.1, 4.2.1, 4.2.2, 4.3.1, 4.3.1, 4.3.2, 4.3.3, 4.3.4 4.3.3,

4.4.2, 4.4.1, 4.4.2, 4.4.4, 4.4.4, 4.4.6

4.4.3,

5.1.1 5.1.8, 5.1.1 5.1.8, 5.2.1 5.2.1 5.2.3 5.2.3 5.3.1 5.3.3, 5.3.1 5.3.3, 5.4.1 5.4.1 5.4.4, 5.4.4, 5.5.3 5.5.3

5.7.1 5.7.2, 5.7.1 5.7.2, 5.8 5.8 6.1.1 6.3.3 6.1.1 6.3.3

6.4.1 6.4.5, 6.4.1 6.4.5, 6.5.1 6.5.1 6.5.4 6.5.4

13

14

15 16

channel MOSFET I-V characteristics Fundamentals of bipolar junction transistors (BJT), amplification with BJTs, BJT fabrication Minority carrier distributions and terminal currents, solution of diffusion equation, current transfer ratio, heterojunction bipolar transistors Optoelectronic devices, photodiodes, Light emitting diodes Introduction to Lasers, Semiconductor lasers, materials for semiconductor lasers

6-4,6-5

6-4,6-5

7.4.1 7.4.4, 5.8. 7.4.1 7.4.4, 7.9 7.9

8.1, 8.2 8.3, 8.4

8.1, 8.2 8.3, 8.4

Grading:

Final Exam: 50 % Sessionals: 30 % Homework Assignments: 5% Quizzes 15%