P3000, LON-CAPA Set 6 Sample Solutions: 1.

Two-terminal MOS capacitor:

From Neamen Sect. 6.2. The figure above shows the choices of energy band diagrams for this question and the following 3 questions. The dc charge distribution of an ideal MOS capacitor is shown below.

In the first box, type "n" or "p" to indicate if the semiconductor in the device shown is ntype or p-type respectively. In the second box, type "a" if the device is biased in the accumulation mode, "d" if it is biased in the depletion mode, or "i" if it is biased in the inversion mode. In the third box, type the letter "A", "B", "C", "D", "E", or "F" to indicate which of the eenrgy band diagrams shown above most closely corresponds to this device and bias.
Correct, computer gets: p, i, C

The dc charge distribution of another ideal MOS capacitor is shown below.

In the first box, type "n" or "p" to indicate if the semiconductor in the device shown is ntype or p-type respectively. In the second box, type "a" if the device is biased in the accumulation mode, "d" if it is biased in the depletion mode, or "i" if it is biased in the inversion mode. In the third box, type the letter "A", "B", "C", "D", "E", or "F" to indicate which of the eenrgy band diagrams shown above most closely corresponds to this device and bias.
Correct, computer gets: p, d, B

The dc charge distribution of another ideal MOS capacitor is shown below.

In the first box, type "n" or "p" to indicate if the semiconductor in the device shown is ntype or p-type respectively. In the second box, type "a" if the device is biased in the accumulation mode, "d" if it is biased in the depletion mode, or "i" if it is biased in the inversion mode. In the third box, type the letter "A", "B", "C", "D", "E", or "F" to indicate which of the eenrgy band diagrams shown above most closely corresponds to this device and bias.
Correct, computer gets: n, i, D

The dc charge distribution of another ideal MOS capacitor is shown below.

In the first box, type "n" or "p" to indicate if the semiconductor in the device shown is ntype or p-type respectively. In the second box, type "a" if the device is biased in the accumulation mode, "d" if it is biased in the depletion mode, or "i" if it is biased in the inversion mode. In the third box, type the letter "A", "B", "C", "D", "E", or "F" to indicate which of the eenrgy band diagrams shown above most closely corresponds to this device and bias.
Correct, computer gets: p, a, F

2. Two-terminal MOS Capacitor: From Neamen Sect. 6.2. Consider p-type Ge in a MOS capacitor structure at T=300 K. Assume that the doping concentration is N_a = 3.001016 cm^-3. What is the potential difference, phi_F_p, between the Fermi energy, E_F, and the intrinsic Fermi level, E_Fi? Enter your answer in volts.

Correct, computer gets: -1.84e-01

Hint: Think about the sign. If E_F is below E_Fi, should phi_Fp be positive or negative?

What is the maximum space charge width, x_dT? Enter your answer in cm.

Correct, computer gets: 1.48e-05

What is the MAGNITUDE of the maximum space charge density per unit area, |Q'_SD(max)|? Enter your answer in C/cm^2.

Correct, computer gets: 7.08e-08

3. Voltage in a MOS capacitor: From Neamen Sect. 6.3. A MOS device is fabricated on a p-type silicon substrate with a doping concentration of N_a = 1.001015 cm^-3. The oxide thickness is t_ox = 430 angstroms and the equivalent fixed oxide charge is Q'_ss = 8.8010-9 C/cm^2. The dielectric constant (or relative permittivity) of silicon is 11.70 and the dielectric constant (or relative permittivity) of the oxide is 3.90. The temperature is T = 300 K. What is the potential difference, phi_F_p, between the Fermi energy, E_F, and the intrinsic Fermi level, E_Fi? Enter your answer in volts.

Correct, computer gets: -2.87e-01

Hint: Think about the sign. If E_F is below E_Fi, should phi_Fp be positive or negative?

What is the maximum space charge width, x_dT? Enter your answer in cm.

Correct, computer gets: 8.62e-05

What is the maximum space charge density per unit are, |Q'_SD(max)|? Enter your answer in C/cm^2.

Correct, computer gets: 1.38e-08

Calculate (V_TN - phi_ms), the difference between the threshold voltage and the metal/semiconductor work function difference. Enter your answer in V.

Correct, computer gets: 6.37e-01

The figure above is a copy of Fig. 21 from the text by Neamen. Assume that the gate on the device described in the previous questions is aluminmum. Using this figure, or the one in the text if it is clearer, to estimate the metalsemiconductor work function difference, phi_ms, calculate the threshold voltage V_TN from your previous answer. Enter your answer in V.

Correct, computer gets: -2.38e-01

4. MOSFET Operation: From Neamen Sect. 6.5. The oxide thickness of an ideal nchannel MOSFET is found to be t_ox = 450.00 angstroms. The dielectric constant (or relative permittivity) of silicon dioxide is 3.90. What is the gate oxide capacitance per unit area, C_ox? Enter your answer in F/cm^2.

Correct, computer gets: 7.67e-08

The figure shows the experimental characteristics of this ideal nchannel MOSFET when it is biased in the saturation region. The equation of the line on the graph is sqrt(I_D) = 0.0119 A^0.5/V * V_GS - 2.367e-3 A^0.5 The width-to-length ratio of the channel is 11. What is the mobility, mu_n, of the majority carriers in the channel. Enter your answer in cm^2/V-s.

Correct, computer gets: 3.36e+02

What is the threshold voltage, V_TN, for this device. Enter your answer in volts.

Correct, computer gets: 0.20

5. MOSFET Scaling: From Neamen Sect. 7.1. An NMOS transistor with parameters K_n = 1.0010-4 A/cm^2 and threshold voltage V_TN = 0.80 V is operating with gate and drain voltages of 5.0 V. In the first box, enter the magnitude of the drain current in A. In the second box, enter the power dissipation in the device in W.

Correct, computer gets: 1.76e-03, 8.82e-03

assume that a constant-field scaling factor of 0.62 is now applied to the transistor and its operating parameters but that assume, also, that the threshold voltage, V_TN, remains constant. In the first box, enter the magnitude of the drain current in A under this constant-field scaling condition. In the second box, enter the power dissipation in the device in W under this constant-field scaling condition.

Correct, computer gets: 8.53e-04, 2.65e-03

In the first box, enter the ratio of the drain current under the constant-field scaling condtions to the drain current in the original transistor. In the second box, enter the ratio of the power dissipated under constant-field scaling conditions to the power dissipated in the original transistor.

Correct, computer gets: 0.484, 0.300

6. Non-ideal Effects: From Neamen Sect. 7.2. A silicon n-channel MOSFET has an acceptor doping concentration of N_a = 4.201016 cm^-3 and a threshold voltage of V_T = +0.75 V. It is biased with a drain-source voltage of V_DS = 5.00 V and a gate-source voltage of V_GS = 4.80 V. This bias results in V_DS > V_DS(sat) so that the channel length is reduced by an amount DeltaL. As a first step in calculating the channel length modulation, calculate the potential difference, phi_FP, between the intrinsic Fermi level and the Fermi Energy in the p-type semiconductor. Enter your answer, including the sign, in volts. Assume that the temperature is 300 K and that the intrinsic carrier concentration in silicon at 300K is 1.501010 cm^-3.

Correct, computer gets: -3.84e-01

Calculate V_DS(sat) for this device. Enter your answer in volts.

Correct, computer gets: 4.05e+00

Calculate the change (reduction) in length, delta L, of the channel under these biasing conditions. Enter your answer in cm. You may assume that the dielectric constant (or relative permittivity) of silicon is 11.70.

Correct, computer gets: 3.77e-06

Now assume that the device in the previous three questions has the following properties: electron mobility mu_n = 650 cm^2/V-s, oxide thickness t_ox = 215.00 angstroms, a channel length of L = 2.0010-4 cm, and width to length ratio of W/L = 10. What is the capacitance per unit area, C_ox, of the gate/oxide layer of the device? Enter your answer in F/cm^2. The dielectric constant (or releative permittivity) of the oxide is 3.90.

Correct, computer gets: 1.61e-07

Calculate the ideal drain current, I_D, for this device assuming that there is no channel length modulation effect. Enter your answer in A. Remember that the gate-source potential difference for this situation is V_GS = 4.80 volts, the threshold voltage is V_TN = 0.75 volts, and the drain-source potential difference is 5 volts. Because V_DS > V_DS(sat), the ideal current under these conditions is I_D = I_D(sat).

Correct, computer gets: 8.56e-03

Hint: You may find it helpful to review section 6.5.2 of your textbook (Neamen).

Finally, calculate the actual drain current (under saturation conditions) taking into account the channel length modulation effect calculated three questions ago. Enter your answer in A.

Correct, computer gets: 8.72e-03