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Abstract: The effect of nano sized particles compared Fraction of interfacial layers
to micro sized particles is explained by the high surface
to volume ratio. The influence of different types and To illustrate the highly increased fraction of interfacial
concentrations of nano and micro sized fillers on the layers, one has to dwell on the consequences of the
erosion resistance, the thermal conductivity and the smaller particle size. On the one hand a spherical
dielectric properties of an unfilled silicone elastomer is particle with a diameter of 1 µm has approximately the
investigated. The dispersion of the filler particles in the same volume as one billon particles with a diameter of
matrix material seems to play a decisive role. 1 nm (Fig. 1).
Key Words: Nanodielectrics, nanometric fillers,
advanced insulation materials, erosion behaviour
INTRODUCTION
FUNDAMENTALS OF THE NANO EFFECT Thus, for a constant filler fraction in the material it is
found that with decreasing particle size
In materials with µ-fillers the volume effect is - the absolute number of atoms in the particle is
dominating, i.e. due to the high volume fraction the highly increasing and
filler material contributes to the properties of the whole - a larger fraction of the atoms in the filler particle
material. Contrary to that the properties in belong to the interfacial layer.
nanodielectrics are affected by the interfacial layer As a result the fraction of the interfacial layers is
between the filler and the matrix material. The reason increased enormously.
for that is the highly increased fraction of interfacial
layers in the material.
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Proceedings of the XIVth International Symposium on High Voltage Engineering,
Tsinghua University, Beijing, China, August 25-29, 2005
C-09
Physical Fundamentals of the Nano Effect interfacial layers is large enough, the properties of the
whole material are neither the properties of the matrix
The binding structures in interfacial layers are very material A nor the properties of the particle B (Fig. 3).
different in comparison with the filler or matrix
material. Beside the classic physical effects quantum
physical effects are also possible. The interfacial layers I
present a range between macroscopic and quantum
mechanical properties. This is evident if one compares IB d is reduced
the size of a nano particle (1 – 100 nm) with the radius
of an aluminium atom (0.25 nm) or the single bond
length between two carbon atoms (0,154 nm) [2].
IA
In a homogenous material, like the matrix material or
interior of a particle, the atomic constitution is also
homogenous. That means every atom is surrounded only
material A particle B material A
by atoms of the same type and therefore the interactions
are equal for all directions. But, atoms of the interfacial
layer interact with atoms of the matrix material and the
filler material likewise. This means that the forces Fig. 3 Intensity I depending on the particle diameter d
acting to the atoms of the interfacial layer are different (according to [7])
from those in a homogeneous material.
The interfacial layer can have a thickness of only 1 nm These changes are not limited only to the macroscopic
if only strong interaction is acting or can be more than properties: The higher intensity in the area of the
10 nm thick if charge carriers are situated in the particle B can for instance be a barrier for an electron
interfacial layer [7, 15]. (in the tunnel effect), for a photon or a phonon. If
The effects in the interfacial layer may be explained by always just the energy quantity of an electron, photon or
a model [7]. The interfacial layer between two different phonon can be transported across the energy barrier, the
materials defines also a transition of an intensity of a electrical conductivity, the light or the thermal
special property (for example concentration or energy) conductivity becomes quantised.
in material A (IA) to another in material B (IB). An example for this effect is the fluorescence behaviour
There must be a continuous transition between the two of CdTe nano particles. Dilutions with nano particles in
intensities at the border (Fig. 2). This transition can have a range from 2 – 5 nm change their fluorescence with
different slopes (a) or even a maximum (b) is possible, increasing particle diameter from green to red [12].
which is higher than the intensities of both materials IA Another example is the quantisation of the thermal
and IB [6, 7]. conductivity, which was detected by Schwab 2000 [13].
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Proceedings of the XIVth International Symposium on High Voltage Engineering,
Tsinghua University, Beijing, China, August 25-29, 2005
C-09
EXPERIMENTAL RESULTS
Investigated materials
Fig. 4 TEM picture of the matrix material with 4 wt. %
Unfilled HTV silicone rubber with a filler content of n-SiO2, 10 000-times magnified
(2), 4, 10, and 40 wt. % was investigated. Table 2 shows
medium primary particle diameter of the used filler
materials. Furthermore, samples without filler material
were investigated.
Primary particles are mostly spherical clusters of
amorphous filler material. The primary particles can not
be split up (sheared) at the dispersion process.
Aggregates are formed by chemical bonds between the
primary particles. Several aggregates can form
agglomerates by weaker surface forces. They are
sensible to shear at the dispersion process.
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Proceedings of the XIVth International Symposium on High Voltage Engineering,
Tsinghua University, Beijing, China, August 25-29, 2005
C-09
200
µ-Al2O3 n-SiO2
loss factor [10^-3] at 3 kV
12
µ-SiO2
150
10 n-Al2O3
100 µ-Al2O3
8
50
6
0
4
0 5 10 15 20 25 30 35 40
filler concentration [wt. %] 2
4
Proceedings of the XIVth International Symposium on High Voltage Engineering,
Tsinghua University, Beijing, China, August 25-29, 2005
C-09
3,4
n-Al2O3 fillers. The reason is probably the unsatisfactory
µ-Al2O3 dispersion of the n-Al2O3. Here the agglomerates have a
3,2
similar size as conventional µ-particles.
An explanation for the peak of the SiO2-fillers at 4 wt %
3,0 can not be given at the moment.
2,8 CONCLUSION
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Proceedings of the XIVth International Symposium on High Voltage Engineering,
Tsinghua University, Beijing, China, August 25-29, 2005
C-09
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