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Biasing Amplification principles Small-signal model development for BJT
amplifier
Basic idea
Step 1: Set the transistor at a certain DC level
biasing
Step 2: Inject a small signal to the input and get a bigger output
coupling
0.6V
amplifier
7V
VCC=10V RB IB
+ VBE
RL
IC
+ VCE
Suppose we want the following biasing condition: IC = 10 mA and VCE = 5 V Find RB and RL Start with VBE 0.7 V. Then, IB = (10 VBE )/ RB = (10 0.7)/ RB IC = IB = 100 (10 0.7)/ RB = 10 mA
So, RB = 94k
Also, VCE = 10 RL IC Hence, 5 = 10 10RL
Transistor: = 100
So, RL = 0.5k
RL
IC
+ VCE
Transistor: = 100
RL
IC
+ VCE
RB 2 R B1 + R B2
R B 1 94 = 6 RB 2
Suppose we get IC = 10mA. Then RL = 0.5k. We can start with RB1 = 940 and RB2 = 60. Such resistors will make sure IB is much smaller than the current flowing down RB1 and RB2, which is consistent with the assumption. What we need in practice is to fine tune RB1 or RB2 such that VCE is exactly 5V.
Prof. C.K. Tse: Revision on Amplifier Configurations
RL
IC
+ VCE
RE
RL
IC
+ VCE
RE
RL
RE
R B 1 10 VB = RB 2 VB
to choose RB1 and RB2 such that IB is much smaller the current flowing in RB1 and RB2.
Prof. C.K. Tse: Revision on Amplifier Configurations
Terminology
The following are the same: Biasing point Quiescent point Operating point (OP) DC point
IC RL
+ VR + VCE Load line Slope=1/RL
VCC
IC
+ VBE
operating point
VCC
VCE
10
IC
Load line Slope=1/RL
a bigger VBE
+ VBE
a smaller RL
VCC
VCE
11
IC
Load line Slope=1/RL a bigger VBE = 0.65 a smaller VBE = 0.6
+ VBE
VCC
VCE
Typically, when VBE moves a little bit, VCE moves a lot! THIS IS CALLED AMPLICATION.
12
13
V Vo = CE Vin VBE
VCE = VCC IC RL
VCE = RL .IC
IC VBE
+ VBE
Common-emitter amplifier
The one we have just studied is called COMMON-EMITTER amplifier.
VCC
RB1 RL IC
+ vCE
SUMMARY:
Small-signal voltage gain = gmRL That means we can increase the gain by increasing gm and/or RL. Output waveform is antiphase.
RB2
+ vBE
15
?
RB2
+ VBE
vCE
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Note on symbols
=
~
Small signal
~
a or a
17
RB1
RL
IC
+
vin
20mV
RB2
+ vBE
vCE
VBE could actually be 0.621234V, which is determined by the network RB1, RB2 and the transistor characteristic!!
How to apply the exact VBE?
18
RB1
RL
IC
+ VCE
0A
RB2
+ VBE
19
VCC
RB1
+ + vBE
RL
IC
+ vCE
coupling capacitor
vin 20mV
RB2
20
RL
IC
+ vCE + + ~
vin
RB2
+ vBE
vo
coupling capacitors (large enough so that they become short-circuit at signal frequencies)
Prof. C.K. Tse: Revision on Amplifier Configurations
21
+ ~
vin
+ ~
vo
22
Small-signal model
Two basic questions:
+ ~ + ~
vin
vo
rin Ro Gm
or
rin Ro Am
+
Ro
rin Gmvin
Norton form
Ro
rin Amvin
Thvenin form
24
iB
+
rin =
vB E v = BE iB iC /
For small-signal,
vBE
rin =
=
v BE i B
v BE i C /
= (i C / v BE ) gm
r = /gm
25
VCC
RL IC
+ vCE
RL gmvBE
~
vCE
v CE = i C RL = g m v BE R L
26
Output side:
VCC
RL IC
+ vCE
v CE vCE + = iC RL ro
v CE = i C (RL
ro gmvBE
ro )
~
RL
vCE
ro )
= g m v BE (R L
27
MUST REMEMBER
B
+ ~
+ ~
vBE
gmvBE
E
ro
vCE
BJT model
28
G
+ ~
vGS
gmvGS
S FET model
ro vDS
+ ~
All amplifier configurations using BJT can be likewise constructed using FET.
Prof. C.K. Tse: Revision on Amplifier Configurations
29
VCC
RB1 RL
+ vo
RB1 ||RB1
RL
B C
r
E
ro
gm~ vBE
+ vin
RB2
+ vBE
30
RB1 ||RB1
r
gm~ vBE
ro
RL
Simplified model:
Ro = RL||ro
+ vin
RB1 ||RB1 || r
RL||ro
+ vo
Voltage gain
vo = g m (R L || ro ) v in g m R L
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+ vin
RB1 ||RB1 || r
+ ~ vBE
+
~
+ vo
gm(RL||ro) vBE
Ro = RL||ro
Voltage gain
vo = g m (R L || ro ) v in g m R L
Prof. C.K. Tse: Revision on Amplifier Configurations
32
+ vin
RB1 ||RB1 || r
+ ~ vBE
+
~
+ vo
gm(RL||ro) vBE
practically no output!!
10
33
+ vin
RB2
+ vBE
+ speaker vo 10
200vin
1k 10
+ vo
200
Prof. C.K. Tse: Revision on Amplifier Configurations
10 = 1.98 1000 + 10
34
+ vin
RB2
+ vBE
200vin
+ vo
200
107 1000 + 10
7
200
35
?
+ vin
RB2
+ vBE
+ vo
speaker 10
36
Emitter follower
+10V
RB1 IC biased to 10mA VCE biased to 5V
+ vin Biasing conditions:
Base voltage 5.6V Emitter voltage 5V Collector current 10mA RE = 500 RB1:RB2 44:56 Say, RB1 = 440k RB2 = 560k
RB2 RE
+ vo
VE = VB 0.6
Thus, for small signal, V E = V B or vo = vin
Gain =
Prof. C.K. Tse: Revision on Amplifier Configurations
vo / vin
=1
37
RB1 r
RB1 || RB2 gm~ vBE
ro
E
+ vin
RB2 RE
+ vo
RE
+ vo
38
vin
iB rin
rin =
=
r
E
ro
gmvBE
~
vi n v BE + v E = iB iB
RB1 || RB2
RE
+ vo
vB E v E + iB iB v = r + E iB vE = r + i E /(1 + ) = r + (1 + )R E
39
r
E
ro
gm~ vBE
im
E
rout RE
vm
40
very large
+ vin
RE||(1/gm)
+
very small + vo
r + (1+ ) RE
1 vin
41
RB2
IE
1/gm
+ vo
This circuit is also called CLASS A output stage. Details to be studied in second year EC2.
42
+ vin
RB2
+ vBE
IE
1 gm + speaker vo 10
43
+ vin
RG2
+ vGS
IS
1 gm + speaker vo 10
44
Further thoughts
Will the biasing resistors affect the gain?
Seems not, because
Rbias
RL
Gain = gmRL + vo which does not depend on Rbias . However, a realistic voltage source has finite internal resistance. This will affect the gain.
+ vin
45
RL
+ vo
The input has a voltage divider network. R bias || r v BE = v in R bias || r + R s Therefore, the gain decreases to
vo R bias || r = (g m R L ) v in R bias || r + R s
assuming ro very large.
Rs
+ vin
Rbias
+ vBE
gmvBE
ro
RL
+ vo
46
Example
10V
5mA
Rbias
94k||600 = 596
gm = 5mA/25mV = 0.2A/V
47
Further thoughts
Recall that the best biasing scheme should be independent.
10V
5mA
84k + vin
1k + vo
One good scheme is emitter degeneration, i.e., using RE to fix biasing current directly. Here, since VB is about 1.6V, as fixed by the base resistor divider, VE is about 1V. Therefore, IC VE/RE = 5mA (no needed!)
16k
200
Question:
Will this biasing scheme affect the gain?
48
Answer:
vo = v in
g m RL 1 1 + 1 + gmR E g m R L 1 + gmR E R L
RB2
RE
RE
We have a good biasing, but a poor gain! Can we improve the gain?
Prof. C.K. Tse: Revision on Amplifier Configurations
49
RL
+ vo
So, this circuit has good biasing, and the gain is still very high! Gain = gmRL which is unaffected by RE because effectively RE is shorted at signal frequency.
RB2
RE
CE
50
Summary
Basic BJT model (small-signal ac model):
IC I = C (kT / q ) VT r = gm V ro = A IC gm = VT is thermal voltage 25mV VA is Early voltage
typically ~ 100V
B + vBE E
gmvBE
ro
E
51
Summary
Basic FET model (small-signal ac model):
G + vGS S D
Similar to the BJT model, but with infinite input resistance. Therefore, the FET can be used in the same way as amplifiers.
gmvGS
ro
S
52
Summary
Common-emitter (CE) amplifier small-signal ac model:
+ vin + vo
Rbias
RL
Rbias
+ vBE
gmvBE
ro
RL
+ vo
+ vin
Gain = gmRL Input resistance = Rbias || r Output resistance = RL ||ro RL (quite large desirable) (large undesirable)
53
Summary
Emitter follower (EF) small-signal ac model:
Rbias
+ vin + vin + vBE
gmvBE
+ vo
Rbias
RE
RE