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Electronic Circuits

Revision on

Basic Transistor Amplifiers

Contents
Biasing Amplification principles Small-signal model development for BJT

Aim of this chapter


To show how transistors can be used to amplify a signal.

amplifier

Prof. C.K. Tse: Revision on Amplifier Configurations

Basic idea
Step 1: Set the transistor at a certain DC level

biasing

Step 2: Inject a small signal to the input and get a bigger output

coupling

0.6V

amplifier

7V

Prof. C.K. Tse: Revision on Amplifier Configurations

Biasing the transistor


To set the transistor to a certain DC level = To set VCE and IC

VCC=10V RB IB
+ VBE

RL

IC
+ VCE

Suppose we want the following biasing condition: IC = 10 mA and VCE = 5 V Find RB and RL Start with VBE 0.7 V. Then, IB = (10 VBE )/ RB = (10 0.7)/ RB IC = IB = 100 (10 0.7)/ RB = 10 mA

So, RB = 94k
Also, VCE = 10 RL IC Hence, 5 = 10 10RL

Transistor: = 100

So, RL = 0.5k

Prof. C.K. Tse: Revision on Amplifier Configurations

dependent biasing bad biasing


VCC=10V RB IB
+ VBE Now, lets go to the lab and try using RB = 94k and RL = 0.5k, and see if we get what we want.

RL

IC
+ VCE

totally wrong! We dont get IC = 10mA and VCE = 5V

This is a bad biasing circuit!


because it relies on the accuracy of , but can be 50% different from what is given in the databook.

Transistor: = 100

Prof. C.K. Tse: Revision on Amplifier Configurations

A slightly better biasing method


VCC=10V RB1 IB RB2
+ VBE Again, our objective is to find the resistors such that IC = 10mA and VCE = 5V. First, if IB is small, we can approximately write
0.6 = 10

RL

IC
+ VCE

RB 2 R B1 + R B2

R B 1 94 = 6 RB 2

Suppose we get IC = 10mA. Then RL = 0.5k. We can start with RB1 = 940 and RB2 = 60. Such resistors will make sure IB is much smaller than the current flowing down RB1 and RB2, which is consistent with the assumption. What we need in practice is to fine tune RB1 or RB2 such that VCE is exactly 5V.
Prof. C.K. Tse: Revision on Amplifier Configurations

A much better biasing method emitter degeneration


VCC=10V RB1 IB RB2
+ VE Again, our objective is to find the resistors such that IC = 10mA and VCE = 5V. Set VE = 2V, say. Then, RE = 2V/10mA = 0.2k. Surely, RL = 0.5k in order to get VCE = 5V. Finally, we have VB = VE + 0.6. Therefore, if IB is small compared to IRB1 and IRB2, we have R B 1 74 = RB 2 26 Hence, RB1 = 740 and RB1 = 260.

RL

IC
+ VCE

RE

NOTE: is never used in calculation!!


Prof. C.K. Tse: Revision on Amplifier Configurations

Stable (good) biasing


Summary of biasing with emitter degeneration:

VCC=10V RB1 VB RB2 IB


+ VE

Choose VE , IC and VCE .

RL

IC
+ VCE

RE

RL

RE

Use VBE 0.6 to get VB. Then use

R B 1 10 VB = RB 2 VB

to choose RB1 and RB2 such that IB is much smaller the current flowing in RB1 and RB2.
Prof. C.K. Tse: Revision on Amplifier Configurations

Terminology
The following are the same: Biasing point Quiescent point Operating point (OP) DC point

Prof. C.K. Tse: Revision on Amplifier Configurations

Alternative view of biasing


VCC
RL IC
+ VCE +

IC RL
+ VR + VCE Load line Slope=1/RL

VCC
IC

+ VBE

operating point

VCC

VCE

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What controls the operating point?


VCC
RL IC
+ VCE
operating point

IC
Load line Slope=1/RL

a bigger VBE

+ VBE

a smaller RL

VCC

VCE

CONCLUSION: VBE or IB controls the OP RL also controls the OP


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What happens if VBE dances up and down?


VCC
RL IC
+ VCE

IC
Load line Slope=1/RL a bigger VBE = 0.65 a smaller VBE = 0.6

The OP also dances up and down along the load line.

+ VBE

VCE also moves up and down.

VCC

VCE

Typically, when VBE moves a little bit, VCE moves a lot! THIS IS CALLED AMPLICATION.

Prof. C.K. Tse: Revision on Amplifier Configurations

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Animation to show amplifier action

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Derivation of voltage gain


Question: what is
VCC
RL IC
+ VCE

V Vo = CE Vin VBE

Clearly, Ohms law says that

VCE = VCC IC RL

VCE = RL .IC
IC VBE

Then, what relates IC and VBE ?

+ VBE

Last lecture: transconductance gm = Hence,

VCE = gmR L VBE


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Prof. C.K. Tse: Revision on Amplifier Configurations

Common-emitter amplifier
The one we have just studied is called COMMON-EMITTER amplifier.

VCC
RB1 RL IC
+ vCE

SUMMARY:
Small-signal voltage gain = gmRL That means we can increase the gain by increasing gm and/or RL. Output waveform is antiphase.

RB2

+ vBE

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How do we inject signal into the amplifier?


VCC
RB1 RL IC
+ ~ vCE = VCE + vCE
or

vin vin 20mV


~

?
RB2

+ VBE

vCE

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Note on symbols
=
~

Total signal a DC point A

vCE = VCE + vCE


total signal (large signal)

operating point or DC value or quiescent point

small signal or ac signal

Small signal
~

a or a

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Solution: Add the same biasing DC level


VCC
Exactly the same biasing VBE + But, it is impossible to find a voltage source which is equal to the exact biasing voltage across B-E.

RB1

RL

IC
+

vin
20mV

RB2

+ vBE

vCE

VBE could actually be 0.621234V, which is determined by the network RB1, RB2 and the transistor characteristic!!
How to apply the exact VBE?

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The wonderful voltage source: capacitor


VCC
The capacitor voltage is exactly equal to VBE because DC current must be zero + VC

RB1

RL

IC
+ VCE

0A
RB2
+ VBE

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Solution insert coupling capacitor


DC voltage equal to exactly the same biasing VBE This is called a

VCC
RB1
+ + vBE

RL

IC
+ vCE

coupling capacitor

vin 20mV

RB2

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Complete common emitter amplifier


VCC
RB1
+ ~ +

RL

IC
+ vCE + + ~

vin

RB2

+ vBE

vo

coupling capacitors (large enough so that they become short-circuit at signal frequencies)
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Can we simplify the analysis?


We are mainly interested in the ac signals. The DC bias does not matter! Can we create a simple circuit just to look at ac signals?

+ ~

vin

common emitter amplifier

+ ~

vo

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Small-signal model
Two basic questions:
+ ~ + ~

vin

common emitter amplifier

vo

What is the loading (resistance) seen here?

What is the Thvenin or Norton equivalent circuit seen here?


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Prof. C.K. Tse: Revision on Amplifier Configurations

Small-signal model of BJT: objectives


To find:

rin Ro Gm

or

rin Ro Am
+

Ro

rin Gmvin
Norton form

Ro

rin Amvin

Thvenin form

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Derivation of the small-signal model


Input side:

iB
+

rin =

vB E v = BE iB iC /

For small-signal,

vBE

rin =
=

v BE i B

v BE i C /

= (i C / v BE ) gm

r = /gm

where gm is the BJTs transconductance

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Derivation of the small-signal model


Output side:

VCC
RL IC
+ vCE

vCE = VCC ICRL


For small-signal,

RL gmvBE
~

vCE

v CE = i C RL = g m v BE R L

where gm is the BJTs transconductance


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Derivation of the small-signal model


+

Output side:

Including BJTs Early effect

VCC
RL IC
+ vCE

v CE vCE + = iC RL ro
v CE = i C (RL

ro gmvBE
ro )
~

RL

vCE

ro )

= g m v BE (R L

where ro is the Early resistor of the BJT.

Recall: ro = VA/IC , where VA is typically about 100V. A very rough approx. is ro = .


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Initial small-signal model for BJT

MUST REMEMBER
B
+ ~

+ ~

vBE

gmvBE
E

ro

vCE

Small-signal BJT parameters: IC I gm = = C (kT / q ) VT r = gm V ro = A IC


VT is thermal voltage 25mV VA is Early voltage
typically ~ 100V

BJT model

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Initial small-signal model for FET


Similar to BJT, but input resistance is .

G
+ ~

vGS

gmvGS
S FET model

ro vDS

+ ~

Small-signal FET parameters:


gm = 2 K I D ro =
1

is the channel length modulation parameter K is a semiconductor parameter

All amplifier configurations using BJT can be likewise constructed using FET.
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Example: common-emitter amplifier


VCC is ac 0V.
Assume the coupling caps are large enough to be considered as shortcircuit at signal frequency

VCC
RB1 RL
+ vo
RB1 ||RB1

RL
B C

r
E

ro
gm~ vBE

+ vin

RB2

+ vBE

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Complete model for common-emitter amplifier


Complete model: + vin + ~ vBE + vo

RB1 ||RB1

r
gm~ vBE

ro

RL

Total input resistance

Rin = RB1 ||RB1 || r


Total output resistance

Simplified model:
Ro = RL||ro

+ vin

RB1 ||RB1 || r

+ ~ vBE gm~ vBE

RL||ro

+ vo

Voltage gain

vo = g m (R L || ro ) v in g m R L
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Prof. C.K. Tse: Revision on Amplifier Configurations

Alternative model for common-emitter amplifier


Output in Thvenin form:
RL||ro
Total input resistance

+ vin

RB1 ||RB1 || r

+ ~ vBE

+
~

+ vo
gm(RL||ro) vBE

Rin = RB1 ||RB1 || r


Total output resistance

Ro = RL||ro
Voltage gain

vo = g m (R L || ro ) v in g m R L
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More about common-emitter amplifier


Because the output resistance is quite large (equal to RL||ro RL), the common-emitter amplifier is a POOR voltage driver. That means, it is not a good idea to use such an amplifier for loads which are smaller than RL. This makes it not suitable to deliver current to load.

1k, for example


RL||ro

+ vin

RB1 ||RB1 || r

+ ~ vBE

+
~

+ vo
gm(RL||ro) vBE

practically no output!!

10

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Bad idea wrong use of common-emitter amplifier


+10V
RB1
5mA 1k
But the output circuit is:
Transconductance gm = IC /(25mV) = 5/25 = 0.2 A/V Expected gain = gmRL = (0.2)(1k) = 200 or 46dB

+ vin

RB2

+ vBE

+ speaker vo 10

200vin

1k 10

+ vo

The effective gain drops to

200
Prof. C.K. Tse: Revision on Amplifier Configurations

10 = 1.98 1000 + 10
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Proper use of common-emitter amplifier


+10V
RB1
5mA 1k nearly open circuit + 10M vo The load must be much larger than RL.

Now the output circuit is: 1k 10M

+ vin

RB2

+ vBE

200vin

+ vo

The effective gain is

200

107 1000 + 10
7

200

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How can we use the amplifier in practice?


+10V
RB1
5mA 1k

How to connect the output to load?

?
+ vin

RB2

+ vBE

+ vo

speaker 10

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Emitter follower
+10V
RB1 IC biased to 10mA VCE biased to 5V
+ vin Biasing conditions:
Base voltage 5.6V Emitter voltage 5V Collector current 10mA RE = 500 RB1:RB2 44:56 Say, RB1 = 440k RB2 = 560k

RB2 RE

+ vo

VE = VB 0.6
Thus, for small signal, V E = V B or vo = vin

Gain =
Prof. C.K. Tse: Revision on Amplifier Configurations

vo / vin

=1
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Small-signal model of emitter follower


+10V
B C

RB1 r
RB1 || RB2 gm~ vBE

ro
E

+ vin

RB2 RE

+ vo

RE

+ vo

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Small-signal model of emitter follower


Input resistance is

vin

iB rin

rin =
=

r
E

ro
gmvBE
~

vi n v BE + v E = iB iB

RB1 || RB2

RE

+ vo

vB E v E + iB iB v = r + E iB vE = r + i E /(1 + ) = r + (1 + )R E

which is quite large (good)!!

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Small-signal model of emitter follower


Output resistance is B C
rout =
v BE v m v BE = = im im iE i B gm v BE 1 vE = = 1 1 v iE + E + gmv E + + gm r RE r 1 1 = 1 1 g + m + gm + gm RE RE 1 = R E || gm

r
E

ro
gm~ vBE

im
E

rout RE

vm

which is quite small (good)!!

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Small-signal model of emitter follower


Thevenin form:

very large
+ vin

RE||(1/gm)
+

very small + vo

r + (1+ ) RE

1 vin

Large input resistance Small output resistance Voltage gain = 1

Draw no current from previous stage Good for any load

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A better emitter follower


+10V
RB1
Input resistance is very LARGE because RE = . Output resistance is 1/gm. Gain = 1. + vin

RB2

IE
1/gm

+ vo

This circuit is also called CLASS A output stage. Details to be studied in second year EC2.

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Common-emitter amplifier with emitter follower as buffer


+10V
RB1 RL
emitter follower (unit gain)

+ vin

RB2

+ vBE

IE
1 gm + speaker vo 10

common-emitter amplifier (high gain)

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FET amplifiers (similar to BJT amplifiers)


+10V
RG1 RL
source follower (unit gain)

+ vin

RG2

+ vGS

IS
1 gm + speaker vo 10

common-source amplifier (high gain = gmRL)

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Further thoughts
Will the biasing resistors affect the gain?
Seems not, because

Rbias

RL
Gain = gmRL + vo which does not depend on Rbias . However, a realistic voltage source has finite internal resistance. This will affect the gain.

+ vin

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Input source with finite resistance


Rbias Rs
+ vin

RL
+ vo

The input has a voltage divider network. R bias || r v BE = v in R bias || r + R s Therefore, the gain decreases to

vo R bias || r = (g m R L ) v in R bias || r + R s
assuming ro very large.

Rs
+ vin

Rbias

+ vBE

gmvBE

ro

RL

+ vo

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Example
10V
5mA

By how much does the gain drop?


1k + vo + vin 50 + vBE

94k 50 + vin 600

Rbias

94k||600 = 596

gm = 5mA/25mV = 0.2A/V

r = /gm = 100/0.2 = 500


Voltage divider attenuation =
R bias || r 596|| 500 = = 0.845 or 1.463dB 50 + R bias || r 50 + 596||500

Hence, the gain is reduced to 0.845(gmRL) = 169


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Further thoughts
Recall that the best biasing scheme should be independent.
10V
5mA

84k + vin

1k + vo

One good scheme is emitter degeneration, i.e., using RE to fix biasing current directly. Here, since VB is about 1.6V, as fixed by the base resistor divider, VE is about 1V. Therefore, IC VE/RE = 5mA (no needed!)

16k

200

Question:
Will this biasing scheme affect the gain?

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Common-emitter amplifier with emitter degeneration


VCC RB1
+ vin

Exercise: Find the small-signal gain of this amplifier.


RL
+ vo

Answer:
vo = v in
g m RL 1 1 + 1 + gmR E g m R L 1 + gmR E R L

RB2

RE

RE

The gain is MUCH smaller.

We have a good biasing, but a poor gain! Can we improve the gain?
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Common-emitter amplifier with emitter by-pass


VCC RB1
+ vin Add CE such that the effective emitter resistance becomes zero at signal frequency.

RL
+ vo

So, this circuit has good biasing, and the gain is still very high! Gain = gmRL which is unaffected by RE because effectively RE is shorted at signal frequency.

RB2

RE

CE

CE is called bypass capacitor.

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Summary
Basic BJT model (small-signal ac model):
IC I = C (kT / q ) VT r = gm V ro = A IC gm = VT is thermal voltage 25mV VA is Early voltage
typically ~ 100V

B + vBE E

gmvBE

ro
E

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Summary
Basic FET model (small-signal ac model):
G + vGS S D

Similar to the BJT model, but with infinite input resistance. Therefore, the FET can be used in the same way as amplifiers.

gmvGS

ro
S

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Summary
Common-emitter (CE) amplifier small-signal ac model:
+ vin + vo

Rbias

RL

Rbias

+ vBE

gmvBE

ro

RL

+ vo

+ vin

Gain = gmRL Input resistance = Rbias || r Output resistance = RL ||ro RL (quite large desirable) (large undesirable)

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Summary
Emitter follower (EF) small-signal ac model:
Rbias
+ vin + vin + vBE

gmvBE
+ vo

Rbias

RE

+ vo Gain = 1 Input resistance = Rbias || [r +(1+)RE ] Output resistance = RE || (1/gm)

RE

(quite large desirable) (small desirable)


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Prof. C.K. Tse: Revision on Amplifier Configurations

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