June 1997

NDP6030PL / NDB6030PL
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features

These P-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as DC/DC converters and high efficiency
switching circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
-30 A, -30 V. RDS(ON) = 0.042 Ω @ VGS= -4.5 V
RDS(ON) = 0.025 Ω @ VGS= -10 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low RDS(ON).
175°C maximum junction temperature rating.

________________________________________________________________________________

Absolute Maximum Ratings T C = 25°C unless otherwise noted

Symbol Parameter NDP6030PL NDB6030PL Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage - Continuous ±16 V
ID Drain Current - Continuous -30 A
- Pulsed -90
PD Total Power Dissipation @ TC = 25°C 75 W
Derate above 25°C 0.5
TJ,TSTG Operating and Storage Temperature Range -65 to 175 °C
TL Maximum lead temperature for soldering purposes, 275 °C
1/8" from case for 5 seconds
TJ,TSTG Operating and Storage Temperature Range -65 to 175 °C
THERMAL CHARACTERISTICS
RθJC Thermal Resistance, Junction-to-Case 2 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

© 1997 Fairchild Semiconductor Corporation NDP6030PL Rev.B1

Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -30 V
∆BVDSS/∆TJ
o
Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 C -36 mV/oC
IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -250 µA
TJ = 125°C 1 mA
IGSSF Gate - Body Leakage, Forward VGS = 16 V, VDS = 0 V -100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -16 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note)

∆VGS(th)/∆TJ Gate Threshold Voltage Temp.Coefficient ID = -250 µA, Referenced to 25 o C 2.2 mV/oC
VGS(th) Gate Threshold Voltage VDS = VGS, ID= -250 µA -1 -1.4 -2 V
TJ = 125°C -0.8 -1.08 -1.6
RDS(ON) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -15 A 0.037 0.042 Ω
TJ = 125°C 0.053 0.075
VGS = -10 V, ID = -19 A 0.021 0.025
ID(on) On-State Drain Current VGS = -4.5 V, VDS = -5 V -20 A
gFS Forward Transconductance VDS = -4.5 V, ID = -19 A 20 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = -15 V, VGS = 0 V, 1570 pF
f = 1.0 MHz
Coss Output Capacitance 975 pF
Crss Reverse Transfer Capacitance 360 pF
SWITCHING CHARACTERISTICS (Note)

tD(on) Turn - On Delay Time VDD = -15 V, ID = -5 A, 12.5 25 nS

Turn - On Rise Time VGS = -5 V, RGEN = 6 Ω 60 120 nS
tr
tD(off) Turn - Off Delay Time 50 100 nS

tf Turn - Off Fall Time 52 100 nS

Qg Total Gate Charge VDS= -12 V 26 36 nC

ID = -30 A , VGS = -5 V
Qgs Gate-Source Charge 6.5 nC
Qgd Gate-Drain Charge 11.5 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
IS Maximum Continuos Drain-Source Diode Forward Current -30 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -100 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -15 A (Note) -0.92 -1.3 V
trr Reverse Recovery Time VGS = 0 V, IF = -30 A 58 ns
dIF/dt = 100 A/µs
Irr Reverse Recovery Current -1.5 A
Note:
Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

NDP6030PL Rev.B1
Typical Electrical Characteristics

60 1.6
V GS = -10V -7.0
-I D , DRAIN-SOURCE CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE
-6.0 V GS= -3.5 V

R DS(ON) , NORMALIZED
-5.0 1.4
-4.0
-4.5 1.2 -4.5
40
-5.0
-4.0 1 -5.5
-6.0
20 -3.5 0.8
-7.0
-3.0 0.6 -10

0 0.4
0 1 2 3 4 5 0 10 20 30 40 50 60
-VDS , DRAIN-SOURCE VOLTAGE (V) -I D , DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.
DRAIN-SOURCE ON-RESISTANCE (OHMS)

1.8 0.12
I D = -15A T = 25°C ID = -15A
A
1.6 V GS = -4.5V R DS(ON) , ON-RESISTANCE 0.1
125 °C
R DS(ON), NORMALIZED

1.4 0.08

1.2
0.06

1
0.04
0.8
0.02
0.6
-50 -25 0 25 50 75 100 125 150 175
0
T , JUNCTION TEMPERATURE (°C) 2 4 6 8 10
J
-VGS ,GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation Figure 4. On Resistance Variation with

with Temperature. Gate-To- Source Voltage.

30 60
-IS , REVERSE DRAIN CURRENT (A)

VDS = -5V T = -55°C VGS = 0V

A 10
25 25°C TJ = 125°C
-ID , DRAIN CURRENT (A)

125°C 1
20 25°C

0.1 -55°C
15

10 0.01

0 0.0001
1 2 3 4 5 0.2 0.4 0.6 0.8 1 1.2 1.4
-V , GATE TO SOURCE VOLTAGE (V) -V , BODY DIODE FORWARD VOLTAGE (V)
GS SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current and
Temperature.

NDP6030PL Rev.B1
 Typical Electrical Characteristics (continued)

10 5000
I D = -30A
-V GS , GATE-SOURCE VOLTAGE (V)

VDS = -6V 3000

8 -12V

CAPACITANCE (pF)
2000
-24V Ciss

6 1000 Coss

4 500
Crss
300 f = 1 MHz
2 VGS = 0 V

150
0.1 0.3 1 2 5 10 20 30
0
0 10 20 30 40 50 -VDS , DRAIN TO SOURCE VOLTAGE (V)
Q g , GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics. Figure 8.Capacitance Characteristics.

150 7000
10µ
100 s
IT 10 6000
LIM 0µ
N) s SINGLE PULSE
S(O
-ID , DRAIN CURRENT (A)

50
RD R θJC =2° C/W
1m 5000
30 s POWER (W) TC = 25°C
4000
10m
s
10 100 3000
ms
VGS = -4.5V DC
5 SINGLE PULSE 2000
R θJC = 2.0 °C/W
1000
2 TC = 25°C
0
1 0.001 0.01 0.1 1 10 100 1,000
1 2 5 10 20 30 50
SINGLE PULSE TIME (mS)
- V DS , DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power
Dissipation.

1
TRANSIENT THERMAL RESISTANCE

D = 0.5
0.5
r(t), NORMALIZED EFFECTIVE

0.3 R θJC (t) = r(t) * RθJC

0.2
0.2 R θJC = 2.0 °C/W
0.1
0.1
0.05 P(pk)

0.05 t1
0.02
t2
0.03
0.01 TJ - TC = P * RθJC (t)
0.02
Duty Cycle, D = t1 /t2
Single Pulse
0.01
0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000
t 1 ,TIME (ms)

Figure 11. Transient Thermal Response Curve.

NDP6030PL Rev.B1