Mram 4 Dieny PDF

Part 4:
Advanced MRAM concepts
Bernard.Dieny@cea.fr
July 2013
Part 4
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OUTLINE Part 4: Advanced MRAM concepts
Ultrafast precessional STTRAM Race track memories 3-terminal devices Voltage controlled MRAM Comparison of STTRAM with resistive RAM
July 2013 Part 4
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Ultrafast precessional STTRAM Race track memories 3-terminal devices Voltage controlled MRAM Comparison of STTRAM with resistive RAM
July 2013 Part 4
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Several families of MRAM

Field-driven STT (STT MRAM)
Planar Perpendicular
DW motion
Hx
Hy
Thermally Assisted (TAS)
STT-TAS
Precessional
Spin-orbit torque (spin-Hall, Rashba)
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Need for ultrafast STTRAM for SRAM-like applications

Idea: elaborateaSpinTransferTorque MRAM withanultrafast switchingtoachievethesubnano secondscale writingtime
Density ~100MHz
Cache SRAM kB MB ~0.5 2ns Register
Memory Hierarchy
Storage disk drive TB ~ms
Main memory DRAM GB 5010ns
Processor
2GHz
Speed p-STTRAM
UltrafastMRAM:
Need for a sub-ns switching MRAM
ReplacingSRAMmemory Buildingnonvolatilelogiccircuitswithlowenergyconsumption
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Stochastic switching in conventional STTRAM approaches

In-plane Out-of-plane
Spin-transfer torque:
Reference layer MgO
r P r M
r P r M
= a j M ( P M )
Stochastic reversal incubation time preceding a large thermal fluctuation Slows down the STTRAM writing
Transmitted voltage (mV)
Devolder et al. Phys. Rev. Let. vol 100 (2008)
MgO based in-plane MTJ

Time after pulse (ns)
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MRAM with orthogonal polarizer and analyzer
Reference Layer (Analyzer) MgO FreeLayer

MgO (lower RA) or Cu
r A r M r P
Equationofmotion

2 STT contributions
dM dM = 0 M H eff + M + a JLong M ( A M )+ a jPerp M ( P M ) dt MS dt
STTfrominplaneanalyzer: Bipolarswitchingoffreelayer magnetization STTfromPerpendicularpolarizer: Outofplaneoscillationsoffreelayer magnetization

9 Switchinginlessthan1ns 9 Noincubationdelay(PM)
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Perpendicular Polarizer
O.Redon,B.Dienyand B.Rodmacq,USPatentFR0015893(2000), US6532164B2 A.Kent etal,APL84,3897(2004)
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RF oscillator with perpendicular to plane polarizer

Cu PtMn J
Al2O3
CoFe CoFe (Pt/Co)
Cu
D.Houssamedine et al, Nat.Mat 2007
Injection of electrons with out-of-plane spins; Steady precession of the magnetization of the soft layer adjacent to the tunnel barrier. Precession (2GHz-40GHz) + Tunnel MR RF voltage Interesting for frequency tunable RF oscillators Radio opportunism
(SPINTEC patent + Lee et al, Appl.Phys.Lett.86, 022505 (2005) )
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dM dM = 0 M H eff + + a jPerp M ( P M )+ a jLong M ( A M ) M dt dt MS
Reference Layer (Analyzer)
r A
Depending on the relative influence of STT from perpendicular polarizer and in-plane analyzer, different switching behaviors can be observed: -If STT from in-plane Analyzer dominates Non-oscillatory switching probability vs pulse duration. Final state determined by current direction. No need to read before write. -If STT from perpendicular Polarizer dominates Oscillatory switching probability versus current pulse duration. Switching whatever the current direction. More difficult to control in STTRAM devices since requires controlling the current pulse duration at 50ps. Requires read before write.
FreeLayer
Perpendicular Polarizer
r P
How to conveniently tune the relative influence of these two STT contributions?
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Tuning the relative STT influence of perp polarizer and in-plane analyzer by playing on the cell aspect ratio
STTfrominplaneanalyzer:
2e t M jcLong = F 0 s g(0) h
2 M s 2e t F 0 M s H K+ 2 h 2g(0)
J.Sun, PRB 62, 570 (2000)
(SI units)
STTfromperpendicularpolarizer:
2e t M H jcPerp = F 0 s K h g(/2) 2
Hk = in-plane shape anisotropy field
K.J.Lee et al, APL 86, 022505 (2005)
To get bipolar non-oscillatory switching probability versus pulse duration:
Perp c
> j> j
Long c
implying
jcLong <1 jcPerp
i.e
g (0 ) H K
( 2) M
<1
Typically,
~ 0.01, 0 M s ~ 1.6T , 0 H K ~ 0.01T , g ( / 2) / g (0) 0.7 with AR~2 so that ratio~1.1

The easiest way to fulfill this relationship is to increase HK by increasing the cell aspect ratio (AR)
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Ellipticalnanopillars 270x80nm
TMR~65% and RA~16 .m2

Annealing300oC;90minutesunderinplanefield
Synthetic antiferromagnetic layers reduce the magnetostatic interactions between layers

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Dynamics dominated by the STT contribution from perpendicular polarizer (AR=2)

Cell size : 80nm*160nm Out-of-plane precession of the free layer magnetization due to STT from perpendicular polarizer
Macrospin simulation: Proba of switching under STT from perp polarizer only
Current density (x1010 A/m2)
100% 50%
AP P
0% Pulse width (ns)
Magnetoresistance (a.u.)
Frequency (GHz)
20 10 0 0 5 10 15
time (ns)
Current density (1010 A/m2)

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Single-shot transmitted signal (AR=2)

Pstate Cell size : 80nm*160nm
APinitialstate AP and P reference signals measured under sufficiently large magnetic field to maintain the AP and P configurations during the current pulse. Field switched off afterwards.
As expected, the perpendicular polarizer induces a large amplitude precession around the normal to the plane
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Frequency vs current density (AR=2)

0.01 0.00 -0.01 -0.02
500mV
0.01 0.00 -0.01 -0.02
0,6GHz
563mV
Frequency (GHz)
1.2 1.1 1.0 0.9 0.8 0.7 7 8 9 10 11 10 12
Voltage (V)
-0.03 -0.04 -0.05 -0.06 -0.07 -0.08 2.00E-008
Voltage (V)
-0.03 -0.04 -0.05 -0.06 -0.07 -0.08
Single pulse Average of 100 traces Reference signal

2.50E-008 3.00E-008 3.50E-008 4.00E-008 4.50E-008
2.50E-008
3.00E-008
3.50E-008
4.00E-008
4.50E-008
time after pulse
2.00E-008
time after pulse (s)
Current Density (x10
A/m)
0.01 0.00 -0.01 -0.02 -0.03 -0.04 -0.05 -0.06 -0.07 2.00E-008 2.50E-008 3.00E-008
630mV
0.01 0.00 -0.01 -0.02 -0.03 -0.04 -0.05 -0.06 -0.07
1GHz
708mV
Voltage (V)

3.50E-008 4.00E-008 4.50E-008
Voltage (V)
Precession frequency depends linearly on the current density

2.50E-008 3.00E-008 3.50E-008 4.00E-008 4.50E-008
2.00E-008
Lee et al, APL86, 022505 (2005)
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Precession decoherence (AR=2)

Single shot traces at 1.4V
De-phasing of precessional motion explains the probability amplitude decay observed in probability measurements
Switching probability (%)
Pulse duration (ns)
9 10
AcknowledgementtoT.DevolderatIEF inParisforrealtimemeasurements
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Time after pulse (ns)

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Precession decoherence also seen in STT oscillators: contribution to linewidth

Cu PtMn J
Cu
D.Houssamedine et al, Nat.Mat 2007
CoFe CoFe (Pt/Co)
Cu
f~200MHz
1 / f 5ns
Time evolution of spectrum
x 10
-7
Time domain measurement

0 .0 2 0 .0 1 5 0 .0 1 0 .0 0 5
F re q u e n c y vs T im e
0.90 mA
12
V (V)
0 -0 .0 0 5 -0 .0 1 -0 .0 1 5 -0 .0 2
t (s)
Sliding 1 window FFT t(s)
10
0.90 mA 1.25 s
10 time t (s )
x 10
15 150 ns
-8
7.1
7 .2
7 .3
7.1
f(GHz)
July 2013 Part 4
7 .4 f (H z )
7.5
7.6
7.7
7 .8
7.8
x 10
9
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Dynamics dominated by STT contribution from in-plane analyzer (AR=5)

Cell size = 50nm*250nm Switching probability (initial=P) Switching probability (initial=AP)
100% 50%
AP
AP
0% Pulse width (ns)
Pulse width (ns)

jcPerp > j > jcLong is fulfilled:
When the condition
9Non-oscillatory bipolar switching can be achieved. 9 If the current is too large, oscillatory switching probability is recovered 9Ultrafast reversal without incubation time
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Without perpendicular polarizer (STT from in-plane analyzer only) J = 25 1010 A/m
magnetoresistance (a.u.) AP
STT from both in-plane and perpendicular polarizer

magnetoresistance (a.u.) AP
Incubation time
P 0.0 0.2 0.4 0.6 0.8 time (ns) 1.0 1.2
P 0.0 0.2 0.4 0.6 0.8 time (ns)
4.5e10 A/m2 5.5e10 A/m2 6.5e10 A/m2 7.5e10 A/m2 1.0 1.2
9 No stochastic incubation time 9 Reduced switching current 9 Switching time is reduced to 300ps by increasing the current density
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Cell size = 50nm*250nm
Switching Probability
Marins de castro Sousa et al, Journal of Applied Physics 111 (2012) 07C912
1 .0 0 .8 0 .6 0 .4 0 .2 0 .0 0 2
500m V 562m V 6 3 1 m V c e n te re d b ia s 6 3 1 m V A P b ia s 6 3 1 m V P b ia s 708 794m V
Similar results: Liu et al, APL97, 242510 (2010)
Switching with 90fJ
4 6 8 P u ls e w id th (n s )
10
Fullfilling the condition jcPerp > j > jcLong allows for bipolar non-oscillatory switching of the storage layer magnetization suitable for SRAM type of applications
precessionstopsatstablestateafterhalfaprecessionperiod.
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Summary on ultrafast STTRAM with orthogonal polarizers Ultrafast STT switching with combined STT influences from perpendicular polarizer and in-plane analyzer Successful integration of a perpendicular polarizer in an in-plane magnetized MTJ with good TMR signal (~6070%). Oscillation of the switching probability associated with dominant STT influence from perpendicular polarizer Bipolar non-oscillatory switching can be achieved for ultrafast reliable writing in STTRAM by using elongated cells. Drawback is larger footprint. Sub-ns switching and low energy consumption can be achieved (90fJ range)
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Ultrafast precessional STTRAM
Race track memories

3-terminal devices Voltage controlled MRAM Comparison of STTRAM with resistive RAM
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Current Induced Domain Wall (DW) motion

(a)
Field driven DW motion
Current driven DW motion
(b)
(c) (d)
Magnetic field H = -20mT
Positive current
H=0
Negative current
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Current Induced Domain Wall (DW) motion

STT used to push domain walls:
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Race-track memories
Shift register based on coherent domain wall displacements induced by current
C
Reading
Parkin et al, IBM (2004)
Writing
Vertical racetrack
Racetrack storage array
Horizontal racetrack
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Race-track memories
Injection of domain walls:
Injection by STT through a tunnel barrier can also be used or using the fringing field from a domain wall in an underlying wire (see
previous slide).
Injection by field
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Race-track memories
Race-track: a multibit MRAM with extended storage layer.
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Race-track memories
Successful demonstration on a 8m long shift register:
Parkin et al, IEDM 2011
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Race-track memories
Remaining challenges:
-Use perpendicular-to-plane materials for narrower domain walls and weak pinning energies. -Avoid pinning defects which locally trap domain walls. One single pinning defect along a given track may prevent that whole track to properly work. -Homogeneity of properties if using vertical dimension.
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Ultrafast precessional STTRAM Race track memories
3-terminal devices
Voltage controlled MRAM Comparison of STTRAM with resistive RAM
July 2013 Part 4
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DW motion
Hx
Hy
STT-TAS
Precessional
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3-terminal MRAM cell based on current-induced domain wall propagation
DW velocity (m/s)
reference barrier Storage stripe
400 300 200 100 0
1 2 3 12 2 Current density (x 10 A/m )
V~250m/s 100nm ~ 400ps Advantages : -Less electrical stress on the barrier during write (improved reliability) -Less current required to write since thickness<<width -Multibit possible
Disadvantage : Larger cell

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NEC
The memory cell has a shape such that a magnetic wall is necessarily exist. Domain wall moved by STT influence from in-plane current.
Potential of 0.1-mA and 2-ns writing with sufficient thermal stability,
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Multibit MRAM (shift register) based on DW propagation
July 2013 Part 4
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DW motion
Hx
Hy
STT-TAS
Precessional
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Rashba effect in MTJ electrodes with in-plane current
AlOx 2nm Co0.5 nm Pt3nm
r J
r E
O-pz
Co-dz
Charge transfer at Co/MOx interface Interfacial E field
r J
r E
r 1 1 r r vE B= c 1 v2 / c2
Breaking of inversion symmetry Rashba effect

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Magnetization reversal by Rashba effect in MTJ electrode with in-plane current Switching induced by spin-orbit torque: Rashba or Spin-Hall
Writing with in-plane current Reading with current through barrier

M.Miron et al, Nature 476,189 (2011)
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Ultrafast precessional STTRAM Race track memories 3-terminal devices
Voltage controlled MRAM

Comparison of STTRAM with resistive RAM
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STTRAM are written by a pulse of current flowing through the MTJ. The main source of energy consumption during write is the Joule dissipation:
E = RI 2t
In STTRAM, the energy per write event is in the range 0.1pJ-10pJ (depending on the retention).
If we could control the magnetic properties of the storage layer by voltage without significant current flow through the MTJ, then the energy consumption could be reduced to
1 2 E = CV 2
Could be in the range of fJ provided V is below 1V

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Several approaches: -Using multiferroc materials : materials which exhibit coupled structural, electrical and magnetic properties (piezoelectric, magneto-electric, magneto-elastic). Example: BiFeO3 -Using synthetic multiferroc materials :
Magneto-elastic Piezo-electric
-Using the influence of interfacial electric field on the perpendicular anisotropy at magnetic metal/oxide interface
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At metal/oxide interface, density of states at Fermi energy can be tuned by electrical field. However very short penetration depth of electrical field in metal (<2): interfacial effect. Can be used to tune the CoFeB/MgO anisotropy by electrical field. Can very much reduce the power consumption compared to STT if operates at V<1V
Endo et al, APL96, 212503(2010)
Intrinsically weak effect. Large manifestation if close to condition of anisotropy reorientation (for instance compensation between in-plane demagnetizing energy and perp interfacial energy). But difficult to use in actual device because condition fulfilled at only one temperature.
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Ultrafast precessional STTRAM Race track memories 3-terminal devices Voltage controlled MRAM
Comparison of STTRAM with resistive RAM

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ITRS ERD Roadmap 2010
STT-MRAM
ReRAM
Vwr0~-0.9V
Vwr1~0.9V@5ns Vread~0.3V
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COMPARISON MRAM / ReRAM

STT-MRAM ReRAM
(2011)
F1
EF
F2 eV
EF
R = Rmin + R
(1 cos )
2
Statistical phenomenon associated with migration of vacancies or metallic ions
J.Lee et al, Gwanju IST, Korea (IEDM2010)
Spin-dependent quantum mechanical tunneling of electrons (as polarizer/analyzer in optics). Switching of magnetization described by LLG equation:
dM dM = M (H eff + bI .M p ) + aI .M (M M p ) + M dt dt
R distributions:
Normalised Count
10
10
-1
Rmin
Rmax
10
-2
8kbit ReRAM
(K.Kit, SAIT, Samsung IEDM 2010)
1Mbit chip TA-MRAM
10
-3
10
-4
10
-5
>25
0 100 200 300 400 500 600 Resistance 700 800 900 1000
10
-6
0.5 1 Resistance (k) Bernard.Dieny@cea.fr
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Multilevel capability:
160 MgO based MTJ
(2011)
TMR(%)
120 80 40 0 -300 -200 -100 0 100 200 300
H(Oe)
Binary resistance levels Multilevel and memristor possible but with much less R amplitude than with ReRAM. Not so easy to implement (R(), DW or stacking of several MTJ)
Multilevel capability Memristor functionality with large R amplitude

J.Lee et al, Gwanju IST, Korea (IEDM2010)
Cyclability:
240
Resistance ()
220 200 180 160 140 120

10
6 7 8 9 10 11
Rmax Rmin
10
10
10
10
10
10 12
Vwrite
Number of pulses
W.C.Chien et al, Macronix, Hsinchu, Taiwan, (IEDM2010) >1016 cycles Bernard.Dieny@cea.fr July 2013 Part 4
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Speed:
STT switching in MTJ
(2011)
Y.T.Cui et la, PRL104, 097201(2010) W.C.Chien et al, Macronix, Hsinchu, Taiwan, (IEDM2010)
Retention:
E I cell t Fchip = 1 exp m exp k T 1 I 0 WR B
E/KBT>67
OK with perpendicular MTJ OK with TAS
W.C.Chien et al, Macronix, Hsinchu, Taiwan, (IEDM2010)

Takemura et al, IEEE Journ of Solid State Circuits, 45, 869 (2010)
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Possibility of crossbar architecture:
(2011)
http://www.unitysemi.com/
MTJ+diode
Difficulty is the in-stack diode

M.-J. Lee et al., Samsung, IEDM 2007 July 2013 Part 4
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Summary of differences MRAM / ReRAM

Cyclability ~ 108 cycles, more than FLASH Larger distribution of Rmin 6Kbit: / Rmax
Unlimited cyclability (>1016 cycles) Narrow distribution of Rmin 1Mbit: / Rmax
5k0.3k / 12k0.8k
3-6k / 10k - 300k
Bilevel resistance Natural continuous change of R Multilevel possible but not straighforward Multilevel capability easier to implement Moderate R : Rmax/Rmin ~2-3 Large R : Rmax/Rmin ~5 - 50
Applications
DRAM, SRAM, e-SRAM, logic-in-memory, Embedded-NVM
e-SRAM, Embedded-NVM, FLASH, Memristor, neuromorphic architecture

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Acknowledgements
R.Sousa S.Bandiera Y.Hadj-Larbi B.Rodmacq S.Auffret M.Souza L.Nistor JP Nozieres
L.Buda-Prejbeanu M.Chshiev H.Bea S.Amara V.Baltz J.Moritz P.Y.Clement C.Baraduc L.Cuchet B.Lacoste Q.Stainer G.Vinai
B.Cambou I.L.Prejbeanu K.Mackay L.Lombard E.Gapihan C.Ducruet Y.Conraux C.Portemont
B.Delaet M.T.Delaye M.C.Cyrille
Work partly supported by the projects

NANOINNOV SPIN (2009) HYMAGINE (ERC2009)
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Part 4:

Advanced MRAM concepts

OUTLINE Part 4: Advanced MRAM concepts

July 2013 Part 4

OUTLINE Part 4: Advanced MRAM concepts

July 2013 Part 4

Several families of MRAM

Thermally Assisted (TAS)

Spin-orbit torque (spin-Hall, Rashba)

July 2013 Part 4

Need for ultrafast STTRAM for SRAM-like applications

Storage disk drive TB ~ms

Main memory DRAM GB 5010ns

Need for a sub-ns switching MRAM

Stochastic switching in conventional STTRAM approaches

Reference layer MgO

Transmitted voltage (mV)

Devolder et al. Phys. Rev. Let. vol 100 (2008)

MgO based in-plane MTJ

MRAM with orthogonal polarizer and analyzer

Reference Layer (Analyzer) MgO FreeLayer

dM dM = 0 M H eff + M + a JLong M ( A M )+ a jPerp M ( P M ) dt MS dt

STTfrominplaneanalyzer: Bipolarswitchingoffreelayer magnetization STTfromPerpendicularpolarizer: Outofplaneoscillationsoffreelayer magnetization

O.Redon,B.Dienyand B.Rodmacq,USPatentFR0015893(2000), US6532164B2 A.Kent etal,APL84,3897(2004)

RF oscillator with perpendicular to plane polarizer

CoFe CoFe (Pt/Co)

D.Houssamedine et al, Nat.Mat 2007

MRAM with orthogonal polarizer and analyzer

Reference Layer (Analyzer)

J.Sun, PRB 62, 570 (2000)

To get bipolar non-oscillatory switching probability versus pulse duration:

jcLong <1 jcPerp

~ 0.01, 0 M s ~ 1.6T , 0 H K ~ 0.01T , g ( / 2) / g (0) 0.7 with AR~2 so that ratio~1.1

MRAM with orthogonal polarizer and analyzer

TMR~65% and RA~16 .m2

Synthetic antiferromagnetic layers reduce the magnetostatic interactions between layers

Dynamics dominated by the STT contribution from perpendicular polarizer (AR=2)

Current density (x1010 A/m2)

0% Pulse width (ns)

Current density (1010 A/m2)

Single-shot transmitted signal (AR=2)

Frequency vs current density (AR=2)

0.01 0.00 -0.01 -0.02

1.2 1.1 1.0 0.9 0.8 0.7 7 8 9 10 11 10 12

-0.03 -0.04 -0.05 -0.06 -0.07 -0.08 2.00E-008

-0.03 -0.04 -0.05 -0.06 -0.07 -0.08

Single pulse Average of 100 traces Reference signal

Single pulse Average of 100 traces Reference signal

time after pulse

time after pulse (s)

Current Density (x10

0.01 0.00 -0.01 -0.02 -0.03 -0.04 -0.05 -0.06 -0.07

Single pulse Average of 100 traces Reference signal

Precession frequency depends linearly on the current density

Single pulse Average of 100 traces Reference signal

time after pulse (s)

time after pulse (s)

Lee et al, APL86, 022505 (2005)

July 2013 Part 4

Precession decoherence (AR=2)

Pulse duration (ns)

Time after pulse (ns)

Precession decoherence also seen in STT oscillators: contribution to linewidth