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MBR20150FCT
Power Schottky Rectifier - 20Amp 150Volt

Features
-Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity -Low power loss, high efficiency -ESD performance human body mode > 6 KV

ITO-220AB
B C D K E A L M

Application
-AC/DC Switching Adaptor and other Switching Power Supply -TFT-LCD and DVD Power Supply

Absolute maximum ratings

Symbol Ratings 20 150 150 0.69 -50 to +175 -50 to +150 Unit A V A V C C Conditions Average Forward Current Repetitive Peak Reverse Voltage Peak Forward Surge Current Forward Voltage Drop Operating Temperature Storage Temperature
H
A1

P O I

F G J

IF(AV) VRRM IFSM VF(max) Tj Tstg

K A2

Electrical characteristics
Parameters Maximum Instantaneous Forward Voltage Maximum Reverse Leakage Current Maximum Voltage Rate of Change Typical Thermal Resistance, Junction to Case Symbol Ratings 0.88V 0.69V 0.01mA 10mA 10,000 V/s Conditions Tc = 25C Tc = 125C Tc = 25C Tc = 125C Rated VR

DIM A B C D E F G H I J K L M N O P

VF IR
dv/dt

R (j-c)

4.5 C/W

Per diode

DIMENSIONS INCHES MM MAX MIN MAX MIN .577 .600 14.65 15.25 .386 .406 9.80 10.30 .098 .114 2.50 2.90 .258 .274 6.55 6.95 .315 .331 8.00 8.40 .110 .161 2.80 4.10 .508 .551 12.90 14.00 .089 .106 2.25 2.70 .020 .028 0.50 0.70 .020 .028 0.50 0.70 .120 .138 3.05 3.50 .169 .185 4.30 4.70 .051 .063 1.30 1.60 .079 .112 2.00 2.85 .043 .055 1.10 1.40 .051 .071 1.30 1.80

NOTE

Note: Pulse Test : 380s pulse width, 2% duty cycle

September 2008 / Rev.6.2

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MBR20150FCT

10 9 8 7 = 0.05 = 1 = 0.1 = 0.2 = 0.5

12 Rth(j-a) = Rth(j-c) 10

PF(av)(W)

5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12

IF(av)(A)

8 6 Rth(j-a) = 15/W 4 2 0

25

50

75

100

125

150

175

IF(av)(A)

Tamb()

Figure 1. Average forward power dissipation versus average forward current (per diode)

Figure 2. Average forward current versus ambient temperature (= 0.5, per diode)

200 175 150

1.0

0.8

Zth(j-c)/R th(j-c)

125

IM(A)

100 75 50 25 0 1E-3 1E-2 1E-1

Tc = 50 Tc = 75

0.6

= 0.5

0.4

= 0.2 = 0.1

Tc = 125

0.2

Single pulse

1E+0

0.0 1E-3

1E-2

1E-1

1E+0

t(s)

tp(s)

Figure 3. Non repetitive surge peak forward current versus overload duration (maximum values, per diode)

Figure 4. Relative variation of thermal impedance junction to case versus pulse duration (per diode)

1E+5 Tj = 175 1E+4 1E+3 Tj = 150 Tj = 125

1000

IR( A)

1E+2 1E+1 1E+0 1E-1 1E-2 10 Tj = 100

C(pF)

100

F = 1MHz Tj = 25

Tj = 25

25

50

75

100

125

150

10

20

50

100

200

VR(V)

VR(V)

Figure 5. Reverse leakage current versus reverse voltage applied (typical values, per diode)

Figure 6. Junction capacitance versus reverse voltage applied (typical values, per diode)

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MBR20150FCT

100

80 70 60

Rth(j-a)( /W)

10

50 40 30 20 10

IFM(A)

Tj = 125 Typical values Tj = 25

Tj = 125 0.1

10

12

14

16

18

20

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

S(cm2)

VFM(V)

Figure 7. Forward voltage drop versus forward current (maximum values, per diode)

Figure 8. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness : 35 m) (STPS20150CG only)

Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: sgc@sirectsemi.com France: ss@sirectsemi.com Taiwan: se@sirectsemi.com Hong Kong: hk@sirectsemi.com China: st@sirectsemi.com Thailand: th@sirectsemi.com Philippines: aiac@sirectsemi.com Belize: belize@sirectsemi.com

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