Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
PN-junction electrostatics
In this chapter you will learn about pn junction electrostatics: Charge density, electric field and electrostatic potential existing inside the diode under equilibrium and steady state conditions.
You will also learn about: Poissons Equation Built-In Potential Depletion Approximation Step-Junction Solution
PN-junction fabrication
PN-junctions are created by several processes including:
V =
1 (EC Eref ) q
E =
1 dEC 1 dEi = q dx q dx
= charge density = Ks o
dE = dx
Holes and electrons will diffuse towards opposite directions, uncovering ionized dopant atoms. This will build up an electric field which will prevent further movement of carriers.
Equilibrium conditions
Under equilibrium conditions, the net electron current and hole current will be zero. E-field NA = 1017 cm3 hole diffusion current net current = 0 hole drift current electron diffusion current opposite to electron flux electron drift current opposite to electron flux
8
ND = 1016 cm3
net current = 0
n-side EF
n EF Ei = kT ln n i
9
An interesting fact:
pp pn
q Vbi nn = exp kT np
10
pp
nn
np xp xn
pn x
11
Built-in potential as a function of doping concentration for an abrupt p+n or n+p junction
12
Depletion approximation
We assume that the free carrier concentration inside the depletion region is zero.
13
Example 1
A p-n junction is formed in Si with the following parameters. Calculate the built-in voltage, Vbi.
ND = 1016 cm3
NA = 1017 cm3
Calculate majority carrier concentration in n-side and p-side. Assume nn = ND = 1016 cm3 and pp = NA= 1017 cm3.
Vbi =
pp nn kT ln n2 q i
= kT ln N A N D n2 q i
14
Example 2
A pn junction is formed in Si with the following parameters. Calculate the built-in voltage, Vbi.
ND = 2 1016 cm3 NA = 1 1016 cm3 NA = 3 1017 cm3 ND = 2 1017 cm3
Calculate majority carrier concentration in n-side and p-side. nn = effective ND = 1016 cm-3; pp = effective NA = 1017 cm3
pp nn kT = kT ln N A N D Vbi = ln n2 n2 q q i i
15