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2SJ412
DC-DC Converter, Relay Drive and Motor Drive Applications
4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) High forward transfer admittance: |Yfs| = 7.7 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 100 V) Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
2-10S1B
Pulse (Note 1)
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
JEDEC
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.08 83.3 Unit C/W C/W
2-10S2B
JEITA TOSHIBA
Note1:
Note 2: VDD = 25 V, Tch = 25C (initial), L = 1.84 mH, RG = 25 , IAR = 16 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
2006-11-16
2SJ412
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Gate-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS 10 V 0V ID = 8 A RL = 6.25 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 6 A VGS = 10 V, ID = 6 A VDS = 10 V, ID = 6 A Min 100 0.8 4.5 VOUT 30 ns 18 Typ. 0.25 0.15 7.7 1100 210 440 18 Max 10 100 2.0 0.32 0.21 Unit A A V V S pF pF pF
ton
tf
50
Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (miller) charge
toff
48 29 19
nC nC nC
160 0.5
64 1.7
A V ns C
Marking
J412
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2006-11-16
2SJ412
ID VDS
5 4 4 8 3 16 20 8
ID VDS
Common source Tc = 25C Pulse test 6 4.0 10 12 3.5 8 3 4 VGS = 2 V
(A)
Drain current
2.5 2
Drain current
ID
ID
(A)
10
2.5 VGS = 2 V
0 0
0.4
0.8
1.2
1.6
2.0
0 0
10
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID VGS
10 Common source VDS = 10 V Pulse test 25 Tc = 55C 6 100 3.2
VDS VGS
Common source Tc = 25C Pulse test
(A)
(V)
2.4
Drain current
ID
1.6
ID = 8 A
0.8
4 2
0 0
0 0
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| ID
(S)
30 Common source VDS = 10 V Pulse test 10 2.0 Common source 1.0 0.5 0.3 Tc = 25C Pulse test
RDS (ON) ID
|Yfs|
Tc = 55C
5 3
100
25
VGS = 4 V 10
0.1
Drain current
ID (A)
Drain current
ID (A)
2006-11-16
2SJ412
RDS (ON) Tc
RDS (ON) ()
0.5 Common source Pulse test 0.4 4 30 Common source Tc = 25C
IDR VDS
ID = 8 A 8
Drain-source on resistance
0.1 VGS = 10 V 0 80
40
Case temperature
Tc
(C)
Drain-source voltage
VDS (V)
Capacitance VDS
5000 3000 Ciss 4
Vth Tc
Common source VDS = 10 V ID = 1 mA Pulse test
(pF)
1000 500 300 Common source 100 50 30 0.1 VGS = 0 V f = 1 MHz Tc = 25C 0.3 1 3 10
Capacitance
Coss
Crss
30
Drain-source voltage
VDS (V)
0 80
40
40
80
120
160
Case temperature
Tc
(C)
PD Tc
80 100
(W)
(V)
80
16
PD
VDS
60
Drain-source voltage
40
20 V 40 40 V 8
20
20 VGS 0 0
0 0
40
80
120
160
20
40
60
80
0 100
Case temperature
Tc
(C)
2006-11-16
Gate-source voltage
60
VDS VDD = 80 V
12
VGS (V)
2SJ412
rth tw
Normalized transient thermal impedance rth (t)/Rth (ch-c)
3
1 0.5 0.3 Duty = 0.5 0.2 0.1 0.1 0.05 0.03 0.01 0.01 10 Single pulse 100 1m 10 m 100 m 0.05 0.02 Duty = t/T Rth (ch-c) = 2.08C/W 1 10 PDM t T
Pulse width
tw
(s)
EAS Tch
100 50
400
(A)
30
300
ID
10 5 3 DC operation Tc = 25C
Drain current
200
100
1 *: Single nonrepetitive pulse Tc = 25C 0.3 Curves must be derated linearly with increase in temperature. 0.5 0.1 0.3 1 3 10 0 25 VDSS max 30 100 300
50
75
100
125
150
Channel temperature
Tch
(C)
Drain-source voltage
VDS (V)
15 V 15 V
WAVE FORM
2006-11-16
2SJ412
030619EAA
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
2006-11-16