1.

e m

ratio =

(a) 1.6 1019 C/Kg (b) 1.759 1011 C/Kg (c) 17.59 1011 C/Kg (d) 9.107 1031 C/Kg 2. Two parallel plates are separated by a distance of 2cm, with a potential of 3V applied across them. An electron starts at rest from negative plate, then its acceleration is (a) 0.264 1013 m / sec2 (b) 2.64 1012 m / sec2 (c) 0.264 1012 m / sec2 (d) 2.64 1013 m / sec2 3. An electron starts at rest on one plate of a parallel plate capacitor , whose plates are 5cm apart. The applied voltage is zero at the instant the electron is released and it increases linearly form 0 to 10v in 0.1 msec. With what speed will the electron strike the positive plate? (a) 1.8 106 m/sec (b) 1.58 m/sec (c) 1.58 106 m/sec (d) 1.58 104 m/sec 4. Sides of glass envelope (neck to screen) are coated with a carbon material called (a) Germanium (b) Gallicum (c) Silicon (d) Aquadag 5. Radius of helical path is (a) 2 M/Be (b) M v sin / B e (c) m sin/eB (d) v.cos . T 6. An electron traveling in an electric eld of strength E. The initial velocity of electron is 5m/sec. and the nal velocity is 10m/sec. Then the average velocity of electron is (a) 10 m/sec. (b) 15 m/sec. (c) 5 m/sec. (d) 0 m/sec. 7. The purpose of the INT/EXT switch in a CRO is to (a) Select input to the vertical plates (b) Provide an internal signal to the vertical input (c) Select the input to SYNC control (d) Select input to the horizontal plates 8. Electrostatic Deection sensitivity is dened as (a) Deection on screen/ deecting voltage (b) Deection on screen * deecting voltage (c) Deection voltage + Deection on screen (d) Deection voltage / deection on screen 9. If the two signals are having the same frequency, dierent amplitude and phase dierence is 900 then the lissajous gure that results is, that (a) ellipse (b) parabola (c) straight line (d) circle 10. The dot on screen can be made as round as possible by using the following Control (a) Intensity (b) Astignatism (c) deection (d) Focus. 11. The p-type impurities in silicon or germanium create (a) Excess number of holes (b) Excess number of mobile positive ions (c) Excess number of mobile negative ions (d) Excess number of electrons 12. The total diode current I for germanium Ge is given by the relationship (a) Io (eV /V T 1) (b) Io (e11,600/T 1) (c) Io (eV T /V 1) (d) Io (V /V T 1) 13. Determine the conductivity of pure silicon at 3000 K. assuming that the concentration of carriers at 3000 K is 1.6 1010 /cm3 for silicon and n = 1500 cm2 / V-Sec. And p = 500 cm2 /V-sec. (a) 0.512 106 moh/cm (b) 51.2 106 moh/cm (c) 0.0512 106 moh/cm (d) 5.12 106 moh/cm 14. The following represent small signal diode model for forward bias. (a) Shown in gure14a

Figure 14a (b) Shown in gure14b

Figure 14b (c) Shown in gure14c

Figure 14c (d) Shown in gure14d

Figure 14d 15. For the step graded junction diode incremental depletion capacitor CT is (a) ACO (1 (b) ACO (1 (c) ACO (1 (d) ACO (1
VD 1/2 ) VO VD 1/3 ) VO VD 1/3 ) VO VD 1/2 ) VO

16. Each valance electron in an intrinsic semiconductor establishes a (a) metalic bond (b) covalent bond (c) Thermal energy (d) Coordinate covalent bond 17. In a forward biased PN diodes the injected hole current in the n - region is proportional to (a) Q (b) 1/Q (c) Q3 (d) Q2 18. In N type material, the concentration of donor atom is given by (a) ND e(EF EC )/kT (b) NV e(Ec EF )/kT (c) NC e(Ec EF )/kT (d) NC NV e(EF EC ) /kT 19. In a tunnel diode, impurity concentration is of the order of (a) 1 in 105 (b) 1 in 103 (c) 1 in 107 (d) 1 in 109 20. The equivalent circuit of varactor diode is (a) Shown in gure20a

Figure 20a (b) Shown in gure20b

Figure 20b (c) Shown in gure20c

Figure 20c (d) Shown in gure20d

Figure 20d