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Data Sheet V1.0 Features Logic Level Input Input protection (ESD) Thermal shutdown with auto restart Overload protection Short circuit protection Overvoltage protection Current limitation
Application All kinds of resistive, inductive and capacitive loads in switching applications C compatible power switch for 12 V and 24 V DC applications and for 42 Volt Powernet Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions. Type HITFET BSP 75N Ordering Code Q67060-S7215 Package P-SOT223-4
Product Summary Parameter Continuous drain source voltage On-state resistance Current limitation Nominal load current Clamping energy Symbol Value 60 550 1 0.7 550 Unit V m A A mJ
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Vbb
HITFET Logic
Over voltage Protection
IN
dV/dt limitation
ESD
SOURCE
Figure 1
Block Diagram
SOURCE
1 2 3
IN DRAIN SOURCE
Figure 2
Pin Configuration
Pin Definitions and Functions Pin No. 1 2 3 + TAB Symbol IN DRAIN SOURCE Function Input; activates output and supplies internal logic Output to the load Ground; pin3 and TAB are internally connected
TAB
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Circuit Description The BSP 75N is a monolithic power switch in Smart Power Technology (SPT) with a logic level input, an open drain DMOS output stage and integrated protection functions. It is designed for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial applications. Protection Functions Over voltage protection: An internal clamp limits the output voltage at VDS(AZ) (min. 60V) when inductive loads are switched off. Current limitation: By means of an internal current measurement the drain current is limited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. This operation leads to an increasing junction temperature until the over temperature threshold is reached. Over temperature and short circuit protection: This protection is based on sensing the chip temperature. The location of the sensor ensures a fast and accurate junction temperature detection. Over temperature shutdown occurs at minimum 150 C. A hysteresis of typ. 10 K enables an automatic restart by cooling. The device is ESD protected according Human Body Model (4 kV) and load dump protected (see Maximum Ratings).
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Absolute Maximum Ratings Tj = 25 C, unless otherwise specified Parameter Continuous drain source voltage Drain source voltage for short circuit protection Continuous input voltage Peak input voltage Continuous Input Current -0.2V VIN 10V VIN<-0.2V or VIN>10V Operating temperature range Storage temperature range
1)
Symbol
Values 60 36
Unit Remarks V V
-0.2 +10 V -0.2 +20 V no limit | IIN | 2mA -40 +150 C -55 +150 C 1.8 550 W mJ V 80 47
mA
Tj Tstg Ptot Power dissipation (DC) Unclamped single pulse inductive energy EAS VLoadDump
ID(ISO) = 0.7 A; Vbb =32V VLoadDump = VP + VS; VP = 13.5 V RI3) = 2 ; td = 400 ms;
Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Junction soldering point Junction - ambient4)
1) 2) 3) 4)
VESD
4000
E 40/150/56
RthJS RthJA
10 70
K/W K/W
VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. See also page 7. RI = internal resistance of the load dump test pulse generator LD200.
Device on epoxy pcb 40 mm 40 mm 1.5 mm with 6 cm2 copper area for pin 4 connection.
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Electrical Characteristics Tj = 25 C, unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Test Conditions
Static Characteristics Drain source clamp voltage Off state drain current
VDS(AZ) 60 IDSS
75 5
VIN(th) 1
1.8
2.5
Input current: normal operation, ID < ID(lim): IIN(1) current limitation mode, ID = ID(lim): IIN(2) After thermal shutdown, ID = 0 A: IIN(3) On-state resistance
A
100 200 250 400 1000 1500 2000 490 850 430 750 675 1350 550 1000
Tj = 25 C Tj = 150 C
On-state resistance
RDS(on)
Tj = 25 C Tj = 150 C
Nominal load current
RDS(on)
ID(Nom) 0.7
Current limit
ID(lim)
1.5
1.9
10
20
Turn-off time
10
20
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Electrical Characteristics (contd) Tj = 25 C, unless otherwise specified Parameter Slew rate on Symbol Limit Values min. typ. 5 max. 10 V/ s V/ s Unit Test Conditions
10
15
Protection Functions2) Thermal overload trip temperature Thermal hysteresis Tjt 150 550 200 165 10 180
C
mJ
Tjt
Unclamped single pulse inductive EAS Tj = 25 C energy Tj = 150 C Inverse Diode Continuous source drain voltage
1) 2)
VSD
See also Figure 9. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as outside normal operating range. Protection functions are not designed for continuous, repetitive operation.
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EMC-Characteristics
The following EMC-Characteristics outline the behavior of typical devices. They are not part of any production test. Table 1 Parameter Temperature Supply Voltage Load Operation mode DUT specific Fast electrical transients acc. to ISO 7637 Test1) Pulse 1 2 3a 3b 4 5
1)
Test Conditions Symbol TA VS RL PWM DC Value 23 5 13.5 27 Unit C V Remark ohmic fINx=100Hz, D=0.5 ON / OFF
VIN(HIGH)=5V
Pulse Cycle Time and Generator Impedance 500ms ; 10 500ms ; 10 100ms ; 50 100ms ; 50 0.01 400ms ; 2
Definition of functional status Class C E Content All functions of the device are performed as designed after exposure to disturbance. One or more function of a device does not perform as designed after exposure and can not be returned to proper operation without repairing or replacing the device. The value after the character shows the limit.
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Conducted Susceptibility
VBB PULSE
Direct Power Injection: Forward Power CW Failure Criteria: Amplitude or frequency variation max. 10% at OUT Typ. Vbb Susceptibility at DC-ON/OFF and at PWM
Figure 3
40
35
Conducted Emissions
dBm
30
25
Acc. IEC 61967-4 (1/150 method) Typ. Vbb Emissions at PWM-mode with 150-matching network
100 90 80 70 60 50
Noise level BSP75N 150ohm Class6 150ohm Class1
20
15
10
Limit OUT, ON OUT, OFF OUT, PWM
0 1 10 100
1000
f / MHz
dBV
150 / 8-H
VBB
150 / 13-N
BAN BSP75N RL
f / MHz
IN
DRAIN SOURCE HF
VBB
RL
2)
2)
Figure 4
For defined de coupling and high reproducibility a defined choke (5H at 1MHz) is inserted in the Vbb-Line. Broadband Artificial Network (short: BAN) consists of the same choke (5H at 1MHz) and the same 150 Ohm-matching network as for emission measurement for defined de coupling and high reproducibility.
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Block diagram
VBB
ID
uC Vcc BSP75N IN D SOURCE
IIN
Px.1 GND
VIN
Application Circuit
IN
SOURCE
Figure 6
LOAD
VAZ
Drain VDS
Power DMOS
Source ID
Figure 7
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Timing diagrams
VIN
VIN t VDS t ID 0.9*ID 0.1*ID ton toff t
ID(lim) ID t j
thermal hysteresis
Figure 11
Short circuit
Figure 9
Figure 10
10
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to t
ON
9 0 0 m
1 ,6 W
800 700
m ax.
m a x.
1 ,2
600 500
typ .
0 ,8
400 300
0 ,4
200 100
0 0 25 50 75 100
C 1 25
150
-50 -25
25
50
C 75 1 0 0 1 2 5 15 0 T
j
Amb
ON
IN (th )
m 1 20 0
V2
1000
typ .
m a x.
1,5
800
typ .
600
400
0,5
200
0 -5 0 -2 5 0 25 50
C 75 100 1 25 150 T
j
-50
-25
25
50
75
C5 15 0 1 00 12 T
j
11
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ON
I D (lim )
1m 50 0
typ .
A 1 ,5
typ .
1000
500
0 ,5
0 0 2 4 6
V 8
10
-5 0
-2 5
25
50
75
C 100 1 25 150 T
j
IN
I D (S C )
typ . A 1 ,5
th (J A )
10 K /W
1
D= 0 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 0
0 ,5
0 0 2 4 6
V 8
10
0 ,1
0 ,0 0 0 0 1 0 ,0 0 1 0 ,1 10
s 100 0
IN
tP
100000
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1.6 0.1
7 0.3
15max
1 0.7 0.1
3 2.3 4.6
0.5 min
0.28 0.04
0.25
0.25
B
GPS05560
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book Package Information SMD = Surface Mounted Device Data Sheet V1.0 13
3.5 0.2
Dimensions in mm 2003-01-10
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 76, D-81541 Mnchen Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Tech-nologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are in-tended to be implanted in the human body, or to support and/ or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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