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FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 700V Low RDS(ON) : 1.552 (Typ.)
SSS6N70A
BVDSS = 700 V RDS(on) = 1.8 ID = 4 A
TO-220F
Units V A A V mJ A mJ V/ns W W/ C
Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds
Thermal Resistance
Symbol R R
JC JA
Typ. ---
Units
C/W
Rev. B
SSS6N70A
Electrical Characteristics (TC=25
Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(Miller) Charge
Test Condition VGS=0V,ID=250A See Fig 7 VDS=5V,ID=250A VGS=30V VGS=-30V VDS=700V VDS=560V,TC=125 C VGS=10V,ID=2A VDS=50V,ID=2A
4* O 4 O
V/ C ID=250A V nA
pF
920 1200
VDS=560V,VGS=10V, ID=6A
4 O 5 See Fig 6 & Fig 12 O
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=4A,VGS=0V TJ=25 C ,IF=6A diF/dt=100A/s
4 O
Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 L=65mH, I AS=4A, V DD=50V, R G=27, Starting T J =25 C O 3 ISD < _ 6A, di/dt < _140A/ s, VDD < _ BVDSS , Starting T J =25 C O 4 Pulse Test : Pulse Width = 250 s, Duty Cycle _ <2% O Essentially Independent of Operating Temperature 5 O
SSS6N70A
Fig 2. Transfer Characteristics
[A] ID , Drain Current
VGS
101
ID , Drain Current
100
100
150 oC 25 oC
10
-1
10-1
10-1
1 01
V GS = 10 V
1 00
VGS = 20 V
1 5 0 oC 2 5 oC 1 0-1 0 . 2 0 . 4 0 . 6
@N o t e s: 1 . VGS = 0 V u l s eT e s t 2 .2 5 0 s P
@N o t e : TJ = 2 5 oC 0 0 5 10 15 2 0
0 . 8
1 . 0
1 . 2
[pF]
C iss 1 0 0 0
Crss= Cgd
1 0
VDS = 1 4 0V 5 0V VDS = 3 V 6 0V DS = 5
Capacitance
5 0 0
C oss C rss
@N o t e s: 1 .V GS = 0 V 2 .f=1M H z
@N o t e s : ID = 6 . 0A 0 0 1 0 2 0 3 0 4 0 5 0 6 0
00 10
1 10
SSS6N70A
BVDSS , (Normalized) Drain-Source Breakdown Voltage
2.5
1.1
2.0
1.0
1.5
0.9
0.5
0.8 -75
-50
-25
25
50
75
100
125
150
175
-50
-25
25
50
75
100
125
150
175
[A]
100 s 1 ms
ID , Drain Current
1 10
ID , Drain Current
0 10
10 ms 100 ms DC
10-1
10-2
101
102
3 10
0 25
50
75
100
125
150
D=0.5 100 0.2 0.1 0.05 10- 1 0.02 0.01 single pulse 10- 2 10- 5 10- 4 10- 3 10- 2 10- 1 100 101 @ Notes : 1. Z J C (t)=3.13 3. TJ M -TC =PD M *Z
o
Z JC(t) ,
PDM t1 t2
[sec]
SSS6N70A
* Current Regulator *
50K 12V 200nF 300nF
VGS Qg
10V
Qgs
Qgd
R1
Current Sampling (I G) Resistor
R2
Current Sampling (I D) Resistor
Charge
Vout VDD
( 0.5 rated V DS )
90%
td(on) t on
tr
td(off) t off
tf
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp
ID
RG DUT 10V
tp
SSS6N70A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS --
IS L Driver RG VGS
Same Type as DUT
VGS
VDD
VGS ( Driver )
10V
IS ( DUT ) IRM
di/dt
VDS ( DUT )
Vf
VDD
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Preliminary
First Production
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Full Production
Obsolete
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.