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Product specification
Triacs
BT137S series
BT137M series
GENERAL DESCRIPTION
Passivated triacs in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.
V A A
PINNING - SOT428
PIN Standard Alternative NUMBER S M 1 2 3 tab MT1 MT2 gate MT2 gate MT2 MT1 MT2
PIN CONFIGURATION
tab
SYMBOL
T2
T1
2 1 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb 102 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 8 65 71 21 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/s A/s A/s A/s A V W W C C
I2t dIT/dt
Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/s. June 1999 1 Rev 1.300
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. TYP. 75 MAX. 2.0 2.4 UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 junction to ambient
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS BT137S-(or BT137M) VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 10 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C MIN. TYP. ... 0.25 5 8 11 30 7 16 5 7 5 1.3 0.7 0.4 0.1 35 35 35 70 30 45 30 45 20 MAX. ...F 25 25 25 70 30 45 30 45 20 1.65 1.5 0.5 ...G 50 50 50 100 45 60 45 60 40 mA mA mA mA mA mA mA mA mA V V V mA UNIT
IL
Latching current
IH VT VGT ID
Holding current On-state voltage Gate trigger voltage Off-state leakage current
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS BT137S-(or BT137M) VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 C; IT(RMS) = 8 A; dIcom/dt = 3.6 A/ms; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s ... 100 MIN. ...F 50 ...G 200 TYP. 250 MAX. UNIT V/s
dVcom/dt
10
20
V/s
tgt
June 1999
Rev 1.300
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
12 10
Ptot / W
10
IT(RMS) / A
BT137
105 109
90 60 30
102 C
8 6 4 2 0
6
113
4
117 121 125 10
4 6 IT(RMS) / A
0 -50
50 Tmb / C
100
150
Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle.
ITSM / A IT I TSM time Tj initial = 25 C max
Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
IT(RMS) / A
1000
25
20
15
100 dI T /dt limit
10
T2- G+ quadrant
10 10us
100us
1ms T/s
10ms
100ms
0 0.01
10
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms.
ITSM / A IT T ITSM time
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 102C.
VGT(Tj) VGT(25 C)
80 70 60 50 40 30
Tj initial = 25 C max
20 10
0 1
1000
50 Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj.
June 1999
Rev 1.300
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
3 2.5 2 1.5
25
IT / A Tj = 125 C Tj = 25 C
20
typ
Vo = 1.264 V Rs = 0.0378 Ohms
max
15
10
1
5
0.5 0 -50
0
50 Tj / C
100
150
0.5
1.5 VT / V
2.5
Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj.
IL(Tj) IL(25 C)
10
3 2.5
unidirectional 1 bidirectional
tp
50 Tj / C
100
150
0.1s
1s
10s
Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj.
IH(Tj) IH(25C)
Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp.
dV/dt (V/us) off-state dV/dt limit
BT137...G SERIES BT137 SERIES
1000
100
BT137...F SERIES
10
dIcom/dt = 10 A/ms
7.9
6.1
4.7
3.6
2.8
0 -50
50 Tj / C
100
150
50 Tj / C
100
150
Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj.
Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt.
June 1999
Rev 1.300
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
MECHANICAL DATA
Dimensions in mm Net Mass: 1.1 g
6.73 max 1.1 2.38 max 0.93 max seating plane 5.4
tab
2 1
2.285 (x2)
0.5 min
3
0.8 max (x2)
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15 2.5
1.5
4.57
June 1999
Rev 1.300
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
June 1999
Rev 1.300