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IRF3710
HEXFET Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
G S
ID = 57A
Description
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Max.
57 40 230 200 1.3 20 28 20 5.8 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/C V A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
0.50
Max.
0.75 62
Units
C/W
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1
09/15/09
IRF3710
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 23 m VGS = 10V, ID =28A 4.0 V VDS = VGS, ID = 250A S VDS = 25V, ID = 28A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 28A 26 nC VDS = 80V 43 VGS = 10V, See Fig. 6 and 13 VDD = 50V ID = 28A ns RG = 2.5 VGS = 10V, See Fig. 10 Between lead, 4.5 6mm (0.25in.) nH G from package 7.5 and center of die contact 3130 VGS = 0V 410 VDS = 25V 72 pF = 1.0MHz, See Fig. 5 1060 280 mJ IAS = 28A, L = 0.70mH
Typ. 0.13 12 58 45 47
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Conditions D MOSFET symbol 57 showing the A G integral reverse 230 S p-n junction diode. 1.2 V TJ = 25C, IS = 28A, VGS = 0V 140 220 ns TJ = 25C, IF = 28A 670 1010 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width 400s; duty cycle 2%. RG = 25, IAS = 28A, VGS=10V (See Figure 12) This is a typical value at device destruction and represents
operation outside rated limits.
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IRF3710
1000
VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V TOP
1000
100
100
VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V TOP
10
10
3.5V
1
3.5V
1
100
1000.00
3.0
I D = 57A
2.5
T J = 175C
10.00
100.00
2.0
(Normalized)
1.5
T J = 25C
1.00
1.0
0.5
V GS = 10V
100 120 140 160 180
TJ , Junction Temperature
( C)
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IRF3710
100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = C ds + Cgd
10000
C, Capacitance(pF)
Ciss
1000
Coss
100
Crss
10 1 10 100
20
40
60
80
100
1000.00
1000
1.00
T J = 25C VGS = 0V
10msec
0.10 0.0 0.5 1.0 1.5 2.0 VSD, Source-toDrain Voltage (V)
0.1
100
1000
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IRF3710
60
VDS
50
RD
VGS RG
D.U.T.
+
40
-VDD
30
V GS
Pulse Width 1 s Duty Factor 0.1 %
20
VDS 90%
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
(Z thJC )
D = 0.50
0.20
Thermal Response
0.1
0.10 0.05 0.02 0.01 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +TC 1
J = P DM x Z thJC
0.01 0.00001
0.0001
0.001
0.01
0.1
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IRF3710
550
15V
RG
20V VGS
D.U.T
IAS tp
+ V - DD
VDS
DRIVER
440
BOTTOM
330
0.01
220
110
( C)
50K
QG
12V
.2F
.3F
VGS
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
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IRF3710
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer
RG VGS dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Body Diode
Forward Drop
Ripple 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET power MOSFETs
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IRF3710
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2009
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