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Components for CB-Radios and transmitter/receiver equipment

RF Bipolar Small Signal Transistor RF FET Small Signal Transistor RF Power Transistor Shortform Transistor Catalogue Integrated Circuits Variable capacitance diode
Albrecht Radio Equipment Scanner Documentation

President CB-Radio Modification Technical Documentation for Radio Equipment


LINK`S
NTE Electronics Inc, Electronic Cross Reference Database ECG Cross Reference Fujitsu Semiconductor Hewlett-Packard Semiconductor KTC Semiconductor (Corea) Motorola RF-Components National Semiconductor NEC Semiconductor New Japan Radio Co., Ltd. Nippon Precision Circuits Philips Components ST Komponenter Sanyo Semiconductor Siemens Semiconductor Texas Instruments Semiconductor Toshiba Components Toshiba Semiconductor - PDF

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RF Bipolar Small Signal Transistor

RF Bipolar Transistor
Transistor Type 2N918 2N2857 2N3663 2N3904 2N4124 2N4957 2N5031 2N5179 NPN NPN NPN NPN NPN PNP NPN NPN Max. Vce 15V 15V 12V 40V 25V 30V 10V 10V Max. Ie 50mA 40mA 30mA 200mA 200mA 30mA 20mA 50mA Max. Diss. 350mW 200mW 350mW 625mW 350mW 200mW 200mW 200mW 120
17dB@ 450MHz 14dB@ 450MHz 15dB@ 200MHz

hfe / Gain
15dB@ 200MHz 12,5dB@ 450MHz 1,5dB@ 200MHz

Max. Freq. 600MHz 1,6GHz 700MHz 300MHz 300MHz 1,6GHz 1,6GHz 1,4GHz

Noise Figure
6dB @ 60MHz 4,5dB @ 450MHz 6,5dB @ 60MHz 5dB @ 15,7kHz 5dB@ 15,7kHz 3dB @ 450MHz 2,5dB @ 450MHz 4,5dB @ 200MHz

Case TO-72 TO-72 TO-92 TO-92 TO-92 TO-72 TO-72 TO-72

Pin
123

EBC

BCE

EBC

EBC

2N5770 2N6304 2SC372 2SC380 2SC383 2SC388 2SC394 2SC454 2SC458 2SC460 2SC461 2SC535 2SC536 2SC710 2SC711 2SC784 2SC829 2SC941 2SC945 2SC1009 2SC1047 2SC1342

NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

15V 15V 60V 30V 45V 25V 25 30V 30V 30V 30V 30V 40V 30V 50V 40V 45V 30V 60V 20V 20V 20V

50mA 50mA 150mA 50mA 50mA 50mA 100mA 100mA 100mA 100mA 100mA 20mA 100mA 30mA 30mA 20mA 50mA 100mA 100mA 50mA 20mA 30mA

350mW 200mW 400mW 300mW 300mW 300mW

15dB@ 200MHz 15dB@ 450MHz

6dB @ 60MHz

TO-92 TO-72 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92

EBC

1,8GHz 200MHz

4,5dB @ 450MHz

29dB@ 10,7MHz 33dB@ 45MHz 33dB@ 45MHz

100MHz 300MHz 300MHz 200MHz

ECB

ECB

ECB

200mW 200mW 200mW 200mW 100mW

35dB@ 455kHz

230MHz 230MHz

ECB

ECB

29dB@ 10,7MHz 17dB@ 100MHz 20dB@ 100MHz

230MHz 230MHz 450MHz 180MHz

5dB @ 1Mhz

TO-92 TO-92

ECB

ECB

3,5dB@ 100MHz

TO-92 TO-92 TO-92 TO-92 TO-92 TO-92

ECB

ECB

200mW 200mW

200MHz 200MHz 500MHz

ECB

250mW 400mW 250mW 150mW 400mW 100mW

70 50

230MHz 120MHz 250MHz


3,5dB@ 1MHz

ECB

TO-92 TO-92

ECB

ECB

100
20dB@ 100MHz 17dB@ 100MHz

250MHz 450MHz 320MHz

2dB @ 1MHz 3,3dB@ 100MHz 5,5dB @ 100MHz

SOT-23 TO-92 TO-92


ECB

ECB

2SC1674 2SC1675 2SC1730 2SC1815 2SC1856 2SC1906 2SC1907 2SC1923 2SC2026 2SC2037 2SC2120 2SC2216 2SC2347 2SC2349 2SC2407 2SC2471 2SC2498 2SC2512 2SC2644 2SC2668 2SC2669 2SC2717 2SC2724

NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

30V 30V 30V 40V 20V 20V 20V 30V 15V 15V 30V 45V 15V 15V 35V 30V 20V 20V 12V 30V 30V 25V 30V

25mA 30mA 50mA 100mA 20mA 50mA 50mA 20mA 50mA 50mA 800mA 50mA 50mA 50mA 150mA 50mA 50mA 50mA 120mA 20mA 50mA 50mA 25mA

250mW 250mW 250mW 300mW 250mW 300mW 300mW 100mW

18dB@ 100MHz

600MHz 150MHz 1,1GHz

5dB@ 100MHz 4dB @ 1MHz

TO-92 TO-92 TO-92

ECB

40

ECB

70

200MHz 200MHz

1dB@ 1kHz

TO-92 TO-92 TO-92 TO-92

ECB

33dB@ 45MHz

1GHz 1,1GHz 550MHz 2.2GHz


2,5dB@ 100MHz

ECB

40
18dB@ 100MHz

ECB

TO-92 TO-92 TO-92

ECB

BEC

600mW 300mW 250mW 250mW 600mW 310mW 300mW 300mW 500mW 100mW 200mW 300mW 250mW

100
29dB@ 45MHz

120MHz 300MHz 650MHz 600MHz 500MHz

TO-92 TO-92 TO-92 TO-92 TO-92 TO-92


2,5dB @ 500MHz 3,8dB @ 200MHz 2dB@ 100MHz 2,5dB@ 100MHz

ECB

BEC

20

ECB

ECB

20 80
20dB@ 200MHz 18dB@ 100MHz 18dB@ 100MHz 30dB@ 10,7MHz 28dB@ 45MHz

2GHz 3,5GHz 900MHz 4GHz 550MHz 100MHz 300MHz 600MHz

ECB

TO-92 TO-92 TO-92 MINI MINI TO-92 TO-92

BEC

BEC

BEC

ECB

ECB

BEC

ECB

2SC2753 2SC2786 2SC2787 2SC2814 2SC2839 2SC2996 2SC2999 2SC3000 2SC3011 2SC3099 2SC3127 2SC3128 2SC3142 2SC3195 2SC3355 2SC3356 2SC3429 2SC3510 2SC3512 2SC3582 2SC3605 2SC3606

NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

12V 20V 30V 20V 20V 30V 20V 20V 7V 20V 12V 12V 20V 30V 12V 12V 12V 12V 10V 10V 12V 12V

70mA 20mA 30mA 30mA 30mA 50mA 30mA 30mA 30mA 30mA 50mA 50mA 30mA 20mA 100mA 100mA 70mA 50mA 50mA 65mA 80mA 80mA

300mW 250mW 250mW 150mW 150mW 150mW 150mW 250mW 150mW 150mW 150mW 350mW 150mW 100mW 600mW 200mW 150mW 600mW 600mW 600mW 600mW 150mW

27dB@ 100MHz 22dB@ 100MHz

5GHz 600MHz 250MHz 200MHz 200MHz 100MHz 450MHz 200MHz 6,5MHz 4GHz 4,5GHz 4,5GHz 450MHz 550MHz

1,7dB@ 100MHz 3dB@ 100MHz 2dB @ 1MHz 3dB@ 100MHz 3dB@ 100MHz 4dB@ 150 2,2dB@ 100MHz 3dB@ 100MHz 2,3dB @ 1GHz 1,7dB @ 100MHz 2,2dB@ 900MHz 2,2dB@ 900MHz 2,2dB@ 100MHz

TO-92 MINI MINI SOT-23 MINI SOT-23 MINI TO-92 SOT-23 SOT-23 SOT-23 TO-92 SOT-23 MINI

BEC

ECB

90
25dB@ 100MHz 25dB@ 100MHz 15dB@ 100MHz 28dB@ 100MHz 25dB@ 100MHz 27dB@ 100MHz 24dB@ 100MHz 10,5dB@ 900MHz 10,5dB@ 900MHz 28dB@ 100MHz

ECB

ECB

ECB

ECB

BEC

ECB

9,5dB@ 1GHz 11dB@ 1GHz 28dB@ 100MHz 10,5dB@ 900MHz 10,5dB@ 900MHz 13dB@ 1GHz 27dB@ 100MHz 28dB@ 100MHz

6,5GHz 7GHz 5GHz 4,5GHz 6GHz 8GHz 6,5GHz 5GHz

1,1dB@ 1GHz 1,1dB @ 1GHz 1,7dB @ 100MHz 2,2dB@ 900MHz 1,6dB@ 900MHz 1,2dB@ 1GHz 1,1dB@ 100MHz 1dB @ 500MHz

TO-92 SOT-23 SOT-23 TO-92 TO-92 TO-92 TO-92 SOT-23

BEC

BEC

BEC

BEC

BEC

2SC3663 2SC4173 2SC4308 2SC4317 2SC4321 2SC4322 2SC4399 2SC4433 2SC4628 2SC4629 2SC4874 2SC4875 2SC5064 2SC5084 2SC5085 2SC5089 2SC5094 2SC5106 2SC5109 2SC5254 2SC5259 2SC5570

NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

12V 30V 20V 10V 10V 10V 20V 18V 20V 9V 12V 9V 12V 12V 12V 10V 10V 10V 10V 7V 7V 15V

50mA 50mA 300mA 40mA 40mA 15mA 30mA 50mA 20mA 50mA 50mA 50mA 30mA 80mA 80mA 40mA 15mA 30mA 60mA 40mA 15mA 50mA

350mW 150mW 600mW 150mW 150mW 150mW 150mW 300mW 200mW 600mW 600mW 450mW 150mW 150mW 150mW 150mW 150mW 150mW 150mW 150mW 150mW 350mW

15dB@ 200MHz

6dB @ 60MHz

TO-92 SOT-23 TO-92

EBC

100 50
28dB@ 100MHz 28dB@ 100MHz 24dB@ 100MHz 25dB@ 100MHz 26dB@ 100MHz 10dB@ 800MHz 11,5dB@ 900MHz 10dB@ 900MHz 11,5dB@ 900MHz 24dB@ 100MHz 26dB@ 100MHz 16,5dB@ 500MHz 28dB@ 100MHz 23dB@ 100MHz 21dB@ 100MHz 21dB@ 100MHz 28dB@ 100MHz 22dB@ 100MHz 1,5dB@ 200MHz

250MHz 2,5GHz 7GHz 7GHz 7GHz 200MHz 750MHz 1GHz 8GHz 5,8GHz 8,5GHz 5GHz 5GHz 5GHz 7GHz 7GHz 4GHz 3GHz 9GHz 9GHz 700MHz

2dB@ 1MHz

BEC

1dB @ 1GHz 1dB @ 1GHz 1,4dB @ 1GHz 3dB @ 100MHz

SOT-23 SOT-23 SOT-23 SOT-23 MINI


ECB

7dB @ 100MHz 1,2dB @ 900MHz 1,8dB @ 900MHz 1,3dB @ 900MHz 1dB @ 500MHz 1dB @ 500MHz 1dB @ 500MHz 1,1dB @ 1GHz 1,4dB @ 1GHz

TO-92 TO-92 TO-92 TO-92 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23

ECB

ECB

ECB

ECB

1,1dB @ 1GHz 1,3dB @ 1GHz 6,5dB @ 60MHz

SOT-23 SOT-23 TO-92


EBC

2SK380 2SK1923 BF115 BF167 BF173 BF180 BF184 BF185 BF198 BF199 BF200 BF224 BF240 BF241 BF254 BF255 BF314 BF324 BF370 BF414 BF494 BF495 BF496

NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN PNP NPN NPN NPN NPN NPN

30V 30V 30V 30V 25V 20V 20V 20V 30V 25V 20V 30V 40V 40V 20V 20V 30V 30V 15V 30V 20V 20V 20V

50mA 20mA 25mA 25mA 25mA 20mA 30mA 30mA 25mA 25mA 20mA 50mA 25mA 25mA 30mA 30mA 25mA 25mA 200mA 25mA 30mA 30mA 20mA

300mW 100mW 125mW 125mW 200mW 150mW 150mW 150mW 500mW 300mW 150mW 250mW 300mW 40 15 30 67 45 26 40 15 75 35

400MHz 550MHz 250MHz 350MHz 700MHz 675MHz 300MHz 220MHz 400MHz 550MHz 650MHz 450MHz 150MHz
4dB@ 60MHz 3dB @ 6dB @ 45MHz 2,6dB @ 36MHz 2,5dB@ 100MHz

TO-92 TO-92 TO-72 TO-92 TO-72 TO-72 TO-72 TO-72 TO-92 TO-92 TO-72 TO-92 TO-92 TO-92

ECB

ECB

BEC*

CEB

CEB

CEB

CEB

200mW 300mW 300mW 300mW 500mW 300mW 300mW 300mW 300mW 30 25 40 80 67 35


30dB@ 100MHz

200MHz 200MHz 600MHz 450MHz 500MHz 400MHz 120MHz 120MHz 550MHz


3dB@ 100MHz 4dB@ 4dB@ 2,5dB @ 200Mhz 2dB @ 200MHz

TO-92 TO-92
CEB

CBE

TO-92 TO-92 TO-92 TO-92 TO-92 TO-92

CBE CBE

EBC

CEB CEB

BF506 BF689K BF748 BF751 BF763 BF775 BF799W BF840 BF926 BF959 BFR90 BFR90A BFR91 BFR91A BFR92 BFR92A BFR92L BFR93 BFR93A BFR93L BFR96 BFR96T

PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

35V 15V 20V 14V 15V 15V 20V 40V 20V 20V 15V 15V 12V 12V 15V 15V 15V 12V 12V 12V 15V 15V

30mA 25mA 50mA 35mA 25mA 30mA 35mA 25mA 25mA 100mA 30mA 30mA 50mA 50mA 30mA 30mA 35mA 40mA 40mA 35mA 100mA 75mA

300mW 360mW 500mW 600mW 360mW 280mW 280mW 280mW 250mW 500mW 300mW 300mW 300mW 300mW 200mW 200mW 350mW 200mW 200mW 350mW 500mW 500mW

17,5dB@ 200MHz 16dB@ 200MHz 20dB@ 100MHz 11dB@ 1000MHz 13dB@ 800MHz 15dB@ 900MHz

300MHz 1,8GHz 1,2GHz 6,5GHz 1,8GHz 5GHz 800MHz

3dB @ 200Mhz 3dB @ 200Mhz 4,5dB @ 100Mhz 2,7dB @ 1000Mhz

TO-92 TO-92 TO-92 TO-92 TO-92

EBC

1,8dB @ 900MHz 3dB @ 100MHz 1,7dB@ 100kHz 5dB @ 200Mhz 3dB@ 200MHz 2,2dB @ 500MHz 2,8dB @ 800MHz 1,9dB @ 500MHz 1,6dB @ 800MHz 2,2dB @ 500MHz 1,8dB @ 800MHz

SOT-23 SOT-23 SOT-23 TO-92 TO-92 SOT-37 SOT-37 SOT-37 SOT-37 SOT-23 SOT-23 SOT-23

65
17,5dB@ 200MHz

380MHz 350MHz 600MHz 5GHz 6GHz 5GHz 6GHz 5GHz 6GHz 3,4GHz

40
19,5dB@ 500MHz 16dB@ 800MHz 18dB@ 500MHz 14dB@ 800MHz 19,5dB@ 500MHz 16dB@ 800MHz

18dB@ 500MHz 14dB@ 800MHz

5GHz 6GHz 3GHz

1,9dB@ 500MHz 1,6dB@ 800MHz 2,5dB@ 30MHz 2dB @ 500MHz 2,3dB@ 500MHz

SOT-23 SOT-23 SOT-23 SOT-37 SOT-23

14,5dB@ 500MHz 16dB@ 500MHz

4,5GHz 5GHz

BFR96TS BFR520 BFY90 KTC3194 KTC3195 KTC3880 MPS536 MPS571 MPS901 MPS911 MPS3866

NPN NPN NPN NPN NPN NPN PNP NPN NPN NPN NPN

15V 15V 15V 30V 30V 30V 10V 10V 15V 12V 30V

100mA 70mA 50mA 20mA 20mA 20mA 30mA 80mA 30mA 40mA 400mA

700mW 300mW 200mW 625mW 400mW 150mW 625mW 625mW 625mW 625mW 625mW

11,5dB@ 800MHz

5GHz 9GHz 1,7GHz 550MHz 550MHz 550MHz 5GHz 5GHz 5GHz 7GHz 800MHz

3,3dB@ 500MHz 1,1dB@ 900MHz 2,5dB @ 200MHz 2,5dB@ 100MHz 2,5dB@ 100MHz 2,5dB@ 100MHz 4,5dB @ 500MHz 2dB @ 500MHz 2,5dB @ 900MHz 1,7dB @ 500MHz

SOT-23 SOT-23 TO-72 MINI MINI SOT-23 TO-92 TO-92 TO-92 TO-92 TO-92
EBC*

60
21dB@ 200MHz 18dB@ 100MHz 18dB@ 100MHz 18dB@ 100MHz 14dB@ 500MHz 14dB@ 500MHz 12dB@ 900MHz 16,5dB @ 500MHz 10dB@ 400MHz

ECB

ECB

* = Shield lead connected to case

CB Radio Banner Exchange

Component Database
Components for CB-Radios and transmitter/receiver equipment

RF Bipolar Small Signal Transistor RF FET Small Signal Transistor RF Power Transistor Shortform Transistor Catalogue Integrated Circuits Variable capacitance diode
Albrecht Radio Equipment Scanner Documentation

President CB-Radio Modification Technical Documentation for Radio Equipment


LINK`S
NTE Electronics Inc, Electronic Cross Reference Database ECG Cross Reference Fujitsu Semiconductor Hewlett-Packard Semiconductor KTC Semiconductor (Corea) Motorola RF-Components National Semiconductor NEC Semiconductor New Japan Radio Co., Ltd. Nippon Precision Circuits Philips Components ST Komponenter Sanyo Semiconductor Siemens Semiconductor Texas Instruments Semiconductor Toshiba Components Toshiba Semiconductor - PDF

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www.dxzone.com Amateur Radio Search Engine

CB Radio Banner Exchange

RF FET Small Signal Transistor

FET Transistor
Transistor 2N3819 2N4416 2N4416A 2N5245 2N5248 2N5484 2N5485 2N5486 Type
N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET

Max. Vds 25V 30V 35V 30V 30V 25V 25V 25V

Max. Id 10mA 15mA 15mA 18mA 20mA 5mA 10mA 20mA

Max. Diss. 350mW 300mW 300mW 360mW 200mW 310mW 310mW 350mW

Gain

Max. Freq.

Noise Figure
3dB @ 400MHz

Case TO-92 TO-72 TO-72 TO-92 TO-92

Pin
1234

SGD

18dB @ 100MHz 18dB @ 100MHz

450MHz 400MHz

2dB @ 100MHz 2dB @ 100MHz

SDG*

SDG*

SGD

16dB @ 100MHz 18dB @ 100MHz 18dB @ 100MHz

200MHz 400MHz 400MHz

3dB @ 100MHz 2dB @ 100MHz 2dB @ 100MHz

TO-92 TO-92 TO-92

DSG

DSG

DSG

2N5668 2N5669 2N5670 2SK19 2SK44 2SK49 2SK125 2SK161 2SK192 2SK241 2SK544 2SK709 2SK710 3N200 3N201 3N202 3N204 3N211 3N212

N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET

25V 25V 25V 18V

5mA 10mA 20mA 10mA

360mW 360mW 360mW 200mW

400MHz 400MHz 400MHz

2,5dB @ 100MHz 2,5dB @ 100MHz 2,5dB @ 100MHz

TO-92 TO-92 TO-92 TO-92 MINI TO92


DSG

25V 18V 18V 20V 20V 20V 20V 20V 25V 25V

30mA 10mA 10mA 30mA 30mA 10mA 10mA 50mA 50mA 50mA

200mW 200mW 200mW 200mW 300mW 300mW 200mW 330mW 500MHz


18dB @ 100MHz 24dB @ 100MHz 28dB @ 100MHz 27dB @ 100MHz

1,5dB @ 100MHz 2,5dB @ 100MHz 1,8dB @ 100MHz 1,7dB @ 100MHz 1,8dB @ 100MHz

TO-92 MINI MINI MINI


DSG

DSG

DSG

DSG

TO-92 MINI
4,5dB @ 400MHz

DSG

DGS

TO-72 TO-72

360mW

200MHz

4,5dB @ 200MHz

TO-72 TO-72

25V

50mA

360mW

TO-72 TO-72

3N213 3SK39 3SK40 3SK45 3SK48 3SK51 3SK59 3SK72 3SK73 3SK74 3SK75 3SK81 3SK88 3SK97 3SK126 3SK173 3SK180

N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET 28dB@ 100MHz 1,8dB@ 100MHz 25dB@ 200MHz 1,4dB@ 200MHz

TO-72 20V 15V 25mA 25mA 250mW TO-72 TO-72 TO-72 TO-72 20V 20V 35mA 35mA TO-72 TO-72 TO-72 20V 20V 3mA 7mA 200mW TO-72 SOT-37 TO-72 20V 5mA SOT-37

15V

30mA

150mW

SOT-143 TO-72

SDGG

15V

30mA

200mW

SOT-143

SDGG

3SK198 3SK199 3SK207 3SK225 3SK226 3SK232 3SK240 3SK249 3SK256 3SK257 3SK259 3SK260 3SK263 3SK264 3SK265 3SK274

N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET

13V 13,5V 13,5V 13,5V 13,5V 13,5V 9V 12,5V 13,5V 13,5V 13,5V 13,5V 15V 15V 15V 9V

50mA 30mA 30mA 30mA 30mA 30mA 1mA 30mA 30mA 30mA 30mA 30mA 30mA 30mA 30mA 1mA

200mW 150mW 150mW 150mW 150mW 150mW 150mW 150mW 150mW 100mW 100mW 100mW 200mW 200mW 200mW 100mW

19dB@ 800MHz

1,2dB@ 800MHz

SOT-143 SOT-143 SOT-143 SOT-143 SOT-143 SOT-143 SOT-143 SOT-143 SOT-143 SOT-143 SOT-143 SOT-143 SOT-143 SOT-143 SOT-143 SOT-143

SDGG

19,5dB@ 800MHz

1,9dB@ 800MHz

SDGG

19,5dB@ 800MHz

1,9dB@ 800MHz

SDGG

22dB@ 500MHz

2dB@ 500MHz

SDGG

27dB@ 200MHz

1,1dB@ 200MHz

SDGG

20dB@ 800MHz

1,5dB@ 800MHz

SDGG

20,5dB@ 800MHz

1dB@ 800MHz

SDGG

20dB@ 800MHz

1,5dB@ 800MHz

SDGG

19,5dB@ 800MHz

1,9dB@ 800MHz

SDGG

22dB@ 800MHz

2dB@ 800MHz

SDGG

19dB@ 800MHz

2,6dB@ 800MHz

SDGG

24,5dB@ 200MHz

3,3dB@ 200MHz

SDGG

21dB@ 200MHz

1,1dB@ 200MHz

SDGG

23dB@ 200MHz

1,1dB@ 200MHz

SDGG

26dB@ 200MHz

1,1dB@ 200MHz

SDGG

20,5dB@ 800MHz

1dB@ 800MHz

SDGG

3SK291 3SK292 3SK293 3SK294 3SK320 40673 40823 40841 BF244 BF245A BF245B BF245C BF256 BF410A BF410B BF410C BF410D BF543 BF900

N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH J-FET N-CH MOS-FET N-CH Dual Gate MOSFET

12,5V 12,5V 12,5V 12,5V 6V 20V 20V 20V 30V 30V 30V 30V 30V 20V 20V 20V 20V 20V

30mA 30mA 30mA 30mA 1mA 50mA 50mA 50mA 50mA 6,5mA 615mA 25mA 10mA 30mA 30mA 30mA 30mA 30mA

150mW 150mW 100mW 100mW 100mW 330mW

22,5dB@ 800MHz

1,5dB@ 800MHz

SOT-143 SOT-143 SOT-143 SOT-143 SOT-143 TO-72 TO-72

SDGG

26dB@ 500MHz

1,4dB@ 500MHz

SDGG

22,5dB@ 500MHz

1,5dB@ 500MHz

SDGG

26dB@ 500MHz

1,4dB@ 500MHz

SDGG

15dB@ 2GHz

1,4dB@ 2GHz

SDGG

400MHz

6dB @ 200MHz

14dB @ 50MHz

3dB @ 50MHz

TO-72 TO-92

500mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 200mW
22dB@ 200MHz

700MHz 700MHz 700MHz 1GHz

1,5dB @ 100MHz 1,5dB @ 100MHz 1,5dB @ 100MHz

TO-92 TO-92 TO-92 TO-92

DSG

DSG

DSG

GSD

1,5dB @ 100MHz 1,5dB @ 100MHz 1,5dB @ 100MHz 1,5dB @ 100MHz

TO-92 TO-92 TO-92 TO-92 SOT-23 SOT-37

GSD

GSD

GSD

GSD

300MHz

1dB @ 200MHz

BF905 BF907 BF908WR BF910 BF960 BF961 BF964S BF966S BF981 BF982 BF988 BF989 BF990A BF991 BF992 BF994 BF994S

N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET 0,6dB @ 200MHz

12V 20V 20V 20V 20V 20V 20V 20V 12V 20V 18V 20V 20V 20V 20V

40mA 50mA 20mA 30mA 30mA 30mA 20mA 40mA 30mA 20mA 30mA 30mA 40mA 30mA 30mA

300mW 300mW 225mW 200mW 200mW 200mW


20dB@ 200MHz

SOT-143

800MHz 2GHz 2GHz 2GHz


1,8dB@ 200MHz

SOT-37 TO-50 TO-50 TO-50


DSGG

25dB@ 200MHz

1dB@ 200MHz

DSGG

25dB@ 200MHz

1dB@ 200MHz

DSGG

200MHz 800MHz 200mW 200mW 200mW 200mW 200mW 200mW


25dB@ 200MHz 29dB@ 100MHz 1,6dB @ 200MHz

SOT-143 SOT-143 SOT-143 SOT-143 SOT-143 SOT-143


SDGG

2dB@ 800MHz

0,7dB@ 100MHz

1,2dB@ 200MHz

1dB@ 200MHz

25dB@ 200MHz

2GHz

1dB@ 200MHz

BF995 BF996 BF996S BF997 BF961 BF543 BF1100 MFE201 MPF102 MPF106 SK3050 SK3065 SK3991

N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH MOS-FET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH J-FET N-CH J-FET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET N-CH Dual Gate MOSFET

20V 20V 20V 20V 20V 20V 14V

30mA 30mA 30mA 30mA 30mA 30mA 30mA

200mW 200mW 200mW 200mW 200mW 200mW 280mW

20dB@ 200MHz

1,8dB@ 200MHz

SOT-143 SOT-143 SOT-143 SOT-143 SOT-143 SOT-23 SOT-143 TO-72

SDGG

25dB@ 200MHz

1dB@ 200MHz

25dB@ 200MHz

2GHz 1GHz 2GHz 300MHz

1dB@ 200MHz

SDGG

25dB@ 200MHz

1dB@ 200MHz

28dB@ 200MHz 25dB@ 200MHz

1dB@ 200MHz 1dB @ 200MHz 2dB@ 800MHz

SDGG

25V 25V 20V 20V 25V

20mA 30mA 50mA 50mA 50mA

310mW 310mW 330mW 330mW 360mW

200MHz 400MHz 400MHz 500MHz 200MHz

4dB @ 400MHz 4dB @ 200MHz 6dB @ 200MHz

TO-92 TO-92 TO-72 TO-72 TO-72

4,5dB @ 400MHz

4,5dB @ 200MHz

* = Shield lead connected to case

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RF Power Transistor

123 TO-92L

123 TO-202

123 TO-202N

123 TO-126

123 TO-220

T-31E

Bipolar NPN Power Transistor


Transistor 2N3375 2N3553 2N3632 2N5943 2N6094 2SC1173 2SC1306 2SC1307 Power 10W 2,5W 20W 1W 75W 10W 16W 16W 12dB 12V Gain 5dB 12dB 7dB 8dB 15dB Voltage 28V 28V 28V 15V 28V Frequency 400MHz 175MHz 175MHz 400MHz 30MHz 100MHz 30MHz 30MHz Mode
FM FM/AM FM FM FM/AM/SSB FM/AM/SSB FM/AM/SSB

Case TO-60 TO-39 TO-60 TO-39 TO-217 TO-220 TO-220 TO-220

Pin 123

BCE BCE

FM/AM/SSB

2SC1590 2SC1591 2SC1678 2SC1728 2SC1729 2SC1909 2SC1944 2SC1945 2SC1946 2SC1946A 2SC1957 2SC1966 2SC1967 2SC1968 2SC1968A 2SC1969 2SC1970 2SC1971 2SC1972 2SC1973 2SC1974 2SC1975 2SC2028

5W 14W 5W 8W 14W 10W 13W 16W 25W 30W 1,8W 3W 7W 14W 14W 18W 1,5W 7W 14W 1W 13W 4W 1,8W

10dB 7,5dB

12,5V 12,5V

136-174MHz 136-174MHz 30MHz 80MHz

FM

TO-220 TO-220 TO-220 TO-202

BEC BEC BCE EBC

FM

10dB 14,5dB 11,1dB 14,5dB 6,7dB 10dB 17dB 7,8dB 6,7dB 3,7dB 5,4dB 12dB 10dB 10dB 10dB

13,5V 13,5V 12V 12V 13,5V 13,5V 12V 13,5V 13,5V 13,5V 13,5V 12V 13,5V 13,5V 13,5V

175MHz 50MHz 30MHz 30MHz 175MHz 175MHz 30MHz 470MHz 470MHz 470MHz 470MHz 30MHz 175MHz 175MHz 175MHz 50MHz

FM

T-31E TO-220 TO-220 BCE BCE BEC

FM/AM/SSB

FM/AM/SSB

TO-220 T-31E T-31E TO-126

FM

FM

ECB

FM FM FM FM

T-31E T-31E T-31E T-31E TO-220 TO-220 TO-220 TO-220 TO-92L TO-220 TO-220 TO-126 BCE BEC BEC BEC BCE BCE BCE ECB

FM/AM/SSB

10dB 10dB

13,5V 13,5V

30MHz 30MHz 30MHz

2SC2029 2SC2036A 2SC2050 2SC2053 2SC2055 2SC2075 2SC2078 2SC2086 2SC2092 2SC2094 2SC2166 2SC2207 2SC2237 2SC2312 2SC2314 2SC2509 2SC2527 2SC2538 2SC2539 2SC2660 2SC2695 2SC3001 2SC3018 2SC3020

6W 1,4W 20W 0,2W 0,25W 4W 4W 0,45W 4W 15W 6W 16W 6W 18,5W 1,8W 13W 60W 0,6W 14W 30W 23W 6W 3W 3W 1,9dB 13dB 13dB 10dB 13,5V 7,2V 7,2V 12,5V 10dB 14,5dB 12V 13,5V 17dB 14dB 12V 13,8dB 13,5V 13dB 13dB 13dB 8,8dB 13,8dB 12dB 15,7dB 15,3dB 13,5V 12V 12V 13,5 12V 12V 12V 13,5V 12V

30MHz

TO-220 TO-202

BCE BCE BCE BCE BCE BCE BCE BCE BCE

30MHz 175MHz 175MHz 27MHz 100MHz 175MHz 100MHz 175MHz 30MHz

FM/AM/SSB

TO-220 TO-92L TO-92L TO-220

FM/AM

FM/AM

FM/AM

TO-220 TO-92L TO-220 T-31E TO-220 TO-220

FM/AM

FM/AM/SSB

FM/AM/SSB

FM/AM/SSB

BCE BEC

175MHz 27MHz 180MHz 30MHz

FM FM/AM/SSB

T-31E TO-220 TO-126 TO-220 TO-220 BCE ECB BEC

FM/AM

175MHz 175MHz

FM/AM

TO-92L T-31E TO-220

BCE

FM

520MHz 175MHz 175MHz 520MHz

FM FM FM FM

T-31E T-31E T-31E T-31E

2SC3021 2SC3022 2SC3103 2SC3104 2SC3133 2SC3299 2SC4137 2SC4693 KTC1006 KTC1969 KTC2078 MRF161 MRF162 MRF163 MRF260 MRF261 MRF262 MRF264 MRF340 MRF342 MRF344 MRF475 MRF476

7W 18W 2,8W 6W 13W 20W 4W

7,7dB 4,8dB 6,7dB 4,8dB 14dB

12,5V 12,5V 7,2V 7,2V 12V

520MHz 520MHz 520MHz 520MHz 1,5-30MHz

FM FM FM FM

T-31E T-31E T-31E T-31E TO-220 TO-220 BEC

FM/AM/SSB

400MHz
FM/AM

TO-126 TO-92L TO-92L TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
FM/AM/SSB

BCE ECB BCE BCE BEC BEC BEC BEC BEC BEC BEC BEC BEC

1W 16W 4W 5W 15W 25W 5W 10W 14W 30W 8W 24W 60W 12W 3W 12dB 11dB 13,5dB 13,5dB 12dB 10dB 5,2dB 7,5dB 5,2dB 13dB 11dB 6dB 10dB 15dB 12V 12V 12,5V 12,5V 12,5V 12,5V 12,5V 12,5V 12,5V 28V 28V 28V 13,5V 13,5V

100MHz 100MHz 100MHz 225-500MHz 225-500MHz 225-500MHz 136-174MHz 136-174MHz 136-174MHz 136-174MHz 30-200MHz 30-200MHz 30-200MHz 1,5-30MHz 1,5-30MHz

FM/AM

FM/AM

FM/AM

FM/AM FM/AM FM/AM

FM

FM

FM

TO-220 TO-220

BCE BCE

FM/AM/SSB

MRF477 MRF479 MRF485 MRF486 MRF496 MRF497 MRF660

40W 15W 15W 40W 40W 60W 7W

15dB 10dB 10dB 15dB 15dB 10dB 5,4dB

13,5V 13,5V 28V 28V 13,5V 13,5V 12,5V

1,5-30MHz 1,5-30MHz 1,5-30MHz 1,5-30MHz 1,5-30MHz 27-50MHz 400-512MHz

FM/AM/SSB FM/AM/SSB

TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220

BEC

BEC

FET Power Transistor


MS1307 25W dB 13,5V 30MHz
FM/AM/SSB

TO-220

GDS

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2SC1307 Silicon NPN Transistor Final RF Power Output

The 2SC1307 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

BCE

Features:
q q

High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz) Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz

Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA

25V 60V 5V 6A 1.7W 20W +150C -55 to +150C 6.25C/W 73.5C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 5mA, IC = 0 ICBO IEBO hFE PO VCB = 30V IE = 0 VEB = 4V, IC = 0 VCE = 12V, IC = 10mA, Note 1 Min Typ Max Unit 60 V 25 5 10 50 18 70 V V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

100 A 100 A 180 W %

VCC = 12V, Pin = 1W, f = 27MHz 16 60

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC1590 Silicon NPN Transistor RF Power Output

The 2SC1590 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications.

BEC

Features:
q q

High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz

Application:
4 to 5 Watt Output Power Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA

17V 35V 4V 12A 1.5W 12.5W +150C -55 to +150C 10C/W 83C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 10mA, IE = 0 V(BR)EBO IE = 5mA, IC = 0 ICBO IEBO hFE PO VCB = 25V IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 100mA, Note 1 VCC = 13.5V, Pin = 600mW, f = 175MHz Min Typ Max Unit 35 V 17 4 10 6 60 50 7 70 V V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

500 A 500 A 180 W %

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC1591 Silicon NPN Transistor RF Power Output

The 2SC1591 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications.

BEC

Features:
q q

High Power Gain: Gpe >/= 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz) Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 18W, f = 175MHz

Application:
10 to 14 Watt Output Power Amplifier in VHF Band Mobile Radio Applications Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA

17V 35V 4V 3.5A 1.5W 25W +175C -55 to +175C 6C/W 100C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 10mA, IE = 0 V(BR)EBO IE = 10mA, IC = 0 ICBO IEBO hFE PO VCB = 25V IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 100mA, Note 1 Min Typ Max Unit 35 V 17 4 10 50 15 70 V V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

1000 A 500 A 180 W %

VCC = 13.5V, Pin = 2.5W, f = 175MHz 14 60

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC1909 Silicon NPN Transistor Final RF Power Output

Description:
2SC1909 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

BCE Absolute Maximum Ratings: (TC = +25C unless otherwise specified)


Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75V Collector-Base Voltage, VCBO 80V Emitter-Base Voltage, VEBO 5V Collector Current, IC Continuous 3A Peak 5A Collector Power Dissipation (TA = +25C), PD 1.2W Collector Power Dissipation (TC = +50C), PD 10W Operating Junction Temperature, TJ +150C Storage Temperature Range, Tstg -55 to +150C

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Symbol V(BR)CBO V(BR)CER V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Test Conditions IC = 100A, IB = 0 IC = 1mA, RBE = 150 Ohm IE = 100A, IC = 0 VCB = 40V IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 0.5A IC = 1A, IB = 0.1A IC = 1A, IB = 0.1A VCE = 10V, IC = 0.1A Min 80 75 5 25 100 Typ 0.15 0.9 150 Max 10 10 200 0.60 1.2 V V MHz Unit V V V A A

Output Capacitance Power Output Collector Efficiency

Cob PO

VCB = 10V, f = 1MHz VCC = 12V, Pin = 0.2W, f = 27MHz

25 4.0 60

W %

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2SC1945 Silicon NPN Transistor Final RF Power Output

The 2SC1945 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

BEC

Features:
q q

High Power Gain: Gpe >/= 14,5dB (VCC = 12V, PO = 18W, f = 27MHz) Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 18W, f = 27MHz

Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA

40V 80V 5V 6A 1.5W 20W +150C -55 to +150C 6.25C/W 83,3C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 5mA, IC = 0 ICBO IEBO hFE PO VCB = 30V IE = 0 VEB = 4V, IC = 0 VCE = 12V, IC = 10mA, Note 1 Min Typ Max Unit 60 V 40 5 10 50 16 70 V V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

100 A 100 A 180 W %

VCC = 12V, Pin = 1W, f = 27MHz 14 60

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC1946 Silicon NPN Transistor Final RF Power Output in VHF band mobile radio application.
ECE

The 2SC1946 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers.
EBE

Features:
q q

High Power Gain: Gpe >/= 6,7dB (VCC = 13,5V, PO = 28W, f = 175MHz) Ability to Withstand Infinite VSWR Load when Operated at: VCC = 15,2V, PO = 30W, f = 175MHz

Application:
25 Watt output power amplifiers in VHF band. Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Rth-c

17V 35V 4V 7A 3W 50W +175C -65 to +175C 3C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 10mA, IE = 0 Min Typ Max Unit 35 V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency V(BR)EBO IE = 10mA, IC = 0 ICBO IEBO hFE PO VCB = 25V IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 0,2A, Note 1

17 4 10

50 32 70

2 1 180 -

V V mA mA

VCC = 13,5V, Pin = 6W, f = 175MHz 28 60

W %

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC1946A Silicon NPN Transistor Final RF Power Output in VHF band mobile radio application.
ECE

The 2SC1946A is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers.
EBE

Features:
q q

High Power Gain: Gpe >/= 10dB (VCC = 13,5V, PO = 30W, f = 175MHz) Ability to Withstand Infinite VSWR Load when Operated at: VCC = 15,2V, PO = 30W, f = 175MHz

Application:
25 Watt output power amplifiers in VHF band. Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Rth-c

17V 35V 4V 7A 3W 50W +175C -55 to +175C 3C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 10mA, IE = 0 Min Typ Max Unit 35 V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency V(BR)EBO IE = 10mA, IC = 0 ICBO IEBO hFE PO VCB = 25V IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 0,2A, Note 1

17 4 10

50 35 70

2 1 180 -

V V mA mA

VCC = 13,5V, Pin = 6W, f = 175MHz 30 60

W %

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC1957 Silicon NPN Transistor Final RF Power Output

The 2SC1957 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

BCE

Features:
q q

High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz) Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz

Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC

25V 60V 5V 6A 1.7W 20W +150C -55 to +150C 6.25C/W

Thermal Resistance, Junction-to-Ambient, RthJA

73.5C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 5mA, IC = 0 ICBO IEBO hFE PO VCB = 30V IE = 0 VEB = 4V, IC = 0 VCE = 12V, IC = 10mA, Note 1 Min Typ Max Unit 60 V 25 5 10 50 18 70 V V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

100 A 100 A 180 W %

VCC = 12V, Pin = 1W, f = 27MHz 16 60

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC1969 Silicon NPN Transistor Final RF Power Output

The 2SC1969 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

BCE

Features:
q q

High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz) Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz

Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC

25V 60V 5V 6A 1.7W 20W +150C -55 to +150C 6.25C/W

Thermal Resistance, Junction-to-Ambient, RthJA

73.5C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 5mA, IC = 0 ICBO IEBO hFE PO VCB = 30V IE = 0 VEB = 4V, IC = 0 VCE = 12V, IC = 10mA, Note 1 Min Typ Max Unit 60 V 25 5 10 50 18 70 V V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

100 A 100 A 180 W %

VCC = 12V, Pin = 1W, f = 27MHz 16 60

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC1970 Silicon NPN Transistor RF Power Output

The 2SC1970 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.

BEC

Features:
q

High Power Gain: Gpe >/= 9,2dB (VCC = 13.5V, PO = 6W, f = 175MHz)

Application:
0,8 to 1 Watt Output Power Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA

17V 35V 4V 0,6A 1W 5W +150C -55 to +150C 25C/W 125#176;C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Symbol Test Conditions Min Typ Max Unit

Collector-Base Breakdown Voltage

V(BR)CBO IC = 5mA, IE = 0 V(BR)EBO IE = 1mA, IC = 0 ICBO IEBO hFE PO VCB = 25V IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 100mA, Note 1 VCC = 13.5V, Pin = 600mW, f = 175MHz

40 17 4 10 1 50

50 1,2 60

V V V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

100 A 100 A 180 W %

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC1971 Silicon NPN Transistor RF Power Output

The 2SC1971 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.

BEC

Features:
q q

High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz

Application:
4 to 5 Watt Output Power Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA

17V 35V 4V 2A 1.5W 12.5W +150C -55 to +150C 10C/W 83C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 10mA, IE = 0 V(BR)EBO IE = 5mA, IC = 0 ICBO IEBO hFE PO VCB = 25V IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 100mA, Note 1 VCC = 13.5V, Pin = 600mW, f = 175MHz Min Typ Max Unit 35 V 17 4 10 6 60 50 7 70 V V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

500 A 500 A 180 W %

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC1972 Silicon NPN Transistor RF Power Output

The 2SC1972 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.

BEC

Features:
q q

High Power Gain: Gpe >/= 7,5dB (VCC = 13.5V, PO = 14W, f = 175MHz) Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 18W, f = 175MHz

Application:
10 to 14 Watt Output Power Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA

17V 35V 4V 3,5A 1.5W 25W +150C -55 to +150C 6C/W 100C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 10mA, IE = 0 V(BR)EBO IE = 5mA, IC = 0 ICBO IEBO hFE PO VCB = 25V IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 100mA, Note 1 Min Typ Max Unit 35 V 17 4 10 50 15 70 V V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

1000 A 500 A 180 W %

VCC = 13.5V, Pin = 600mW, f = 175MHz 14 60

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC1973 Silicon NPN Transistor RF Amplifier


The 2SC1973 is a silicon NPN epitaxial planer type transistor designed for RF amplifiers on HF band mobile radio applications.
BCE

Application:
Driver Amplifier Applications in HF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Ambient, RthJA

55V -V -V 0,5A 1W +135C -55 to +150C -C/W

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2SC2036A Audio Amplifier, Driver

ECB
Absolute Maximum Ratings: (TA = +25C unles otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Continuous Peak Collector Dissipation (TA = +25C), PC Collector Dissipation (TC = +25C), PC Operating Junction Temperature, TJ Storage Temperature Range, Tstg 180V 160V 5V 1.5A 3.0A 1W 20W +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 1mA, IC = 0 ICBO hFE VCB = 160V, IE = 0 IC = 150mA, VCE = 5V IC = 500mA, VCE = 5V Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency VCE(sat) IC = 500mA, IB = 50mA VBE fT VCE = 5V, IC = 150mA IC = 500mA, VCE = 5V Min Typ Max Unit 180 V 160 5 60 30 140 10 200 1 1.5 V V MHz V V A

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain

Collector Output Capacitance

Cob

VCB = 10V, IE = 0, f = 1MHz

14

pF

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2SC2053 Silicon NPN Transistor RF Amplifier


The 2SC2053 is a silicon NPN epitaxial planer type transistor designed for RF amplifiers on VHF band mobile radio applications.
BCE

Features:
q

High Power Gain: Gpe >/= 15,7dB (VCC = 13,5V, PO = 0,15W, f = 175MHz)

Application:
Driver Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Ambient, RthJA

17V 40V 4V 0,3A 0,6W +135C -55 to +150C 183C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 1mA, IC = 0 ICBO VCB = 15V IE = 0 Min Typ Max Unit 40 V 17 4 20 V V A

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current

Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

IEBO hFE PO

VEB = 3V, IC = 0 VCE = 10V, IC = 100mA, Note 1

10

50

20 180 -

VCC = 13.5V, Pin = 4mW, f = 175MHz 0,15 0,2 40 50

W %

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC2055 Silicon NPN Transistor RF Amplifier


The 2SC2055 is a silicon NPN epitaxial planer type transistor designed for RF amplifiers on VHF band mobile radio applications.
BCE

Features:
q

High Power Gain: Gpe >/= 13dB (VCC = 7,2V, PO = 0,2W, f = 175MHz)

Application:
Driver Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Ambient, RthJA

9V 18V 4V 0,3A 0,5W +135C -55 to +150C 220C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 10mA, IE = 0 V(BR)EBO IE = 1mA, IC = 0 ICBO VCB = 10V IE = 0 Min Typ Max Unit 18 V 9 4 30 V V A

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current

Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

IEBO hFE PO

VEB = 3V, IC = 0 VCE = 7V, IC = 50mA, Note 1

10

50

30 180 -

VCC = 13.5V, Pin = 4mW, f = 175MHz 0,2 0,25 50 60

W %

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC2078 Silicon NPN Transistor Final RF Power Output

The 2SC2078 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

BCE Absolute Maximum Ratings: (TC = +25C unless otherwise specified)


Collector-Emitter Voltage (RBE = 150 Ohm), VCER Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Continuous Peak Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 75V 80V 5V 3A 5A 1.2W 10W +150C -55 to +150C

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 100A, IB = 0 V(BR)EBO IE = 100A, IC = 0 ICBO IEBO hFE VCB = 40V IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 0.5A Min Typ Max Unit 80 V 75 5 25 10 10 200 V V A A

Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance Power Output Collector Efficiency

VCE(sat) IC = 1A, IB = 0.1A VBE(sat) IC = 1A, IB = 0.1A fT Cob PO VCE = 10V, IC = 0.1A VCB = 10V, f = 1MHz

0.15 0.60 0.9 1.2 -

V V MHz

100 150 25 -

VCC = 12V, Pin = 0.2W, f = 27MHz 4.0 60

W %

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2SC2086 Silicon NPN Transistor RF Amplifier


The 2SC2086 is a silicon NPN epitaxial planer type transistor designed for RF amplifiers on HF band mobile radio applications.
BCE

Features:
q

High Power Gain: Gpe >/= 13dB (VCC = 12V, PO = 0,3W, f = 27MHz)

Application:
Driver Amplifier Applications in HF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Ambient, RthJA

35V 75V 4V 1A 0,8W +135C -55 to +150C 137,5C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 1mA, IC = 0 ICBO VCB = 30V IE = 0 Min Typ Max Unit 75 V 35 4 10 V V A

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current

Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

IEBO hFE PO

VEB = 3V, IC = 0 VCE = 10V, IC = 100mA, Note 1

35

70

100 A 300 W %

VCC = 12V, Pin = 15mW, f = 27MHz 0,3 0,45 50 60

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC2092 Silicon NPN Transistor Final RF Power Output

The 2SC2092 is a silicon NPN transistor in a TO-220 type case designed for use in medium power output amplifier stages such as citizen band communications equipment.

BCE Absolute Maximum Ratings: (TC = +25C unless otherwise specified)


Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75V Collector-Base Voltage, VCBO 80V Emitter-Base Voltage, VEBO 5V Collector Current, IC Continuous 3A Peak 5A Collector Power Dissipation (TA = +25C), PD 1.2W Collector Power Dissipation (TC = +50C), PD 10W Operating Junction Temperature, TJ +150C Storage Temperature Range, Tstg -55 to +150C

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol Test Conditions V(BR)CBO IC = 100A, IB = 0 V(BR)CER IC = 1mA, RBE = 150 Ohm V(BR)EBO IE = 100A, IC = 0 ICBO IEBO hFE VCB = 40V IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 0.5A Min Typ Max Unit 80 V 75 5 25 10 10 200 V V A A

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance Power Output Collector Efficiency

VCE(sat) VBE(sat) fT Cob PO

IC = 1A, IB = 0.1A IC = 1A, IB = 0.1A VCE = 10V, IC = 0.1A VCB = 10V, f = 1MHz VCC = 12V, Pin = 0.2W, f = 27MHz

0.15 0.60 0.9 1.2 -

V V MHz

100 150 25 4.0 60 -

W %

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2SC2094 Silicon NPN Transistor Final RF Power Output in VHF band mobile radio application.
ECE

The 2SC2094 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers.
EBE

Features:
q q

High Power Gain: Gpe >/= 8,8dB (VCC = 13,5V, PO = 15W, f = 175MHz) Ability to Withstand Infinite VSWR Load when Operated at: VCC = 15,2V, PO = 18W, f = 175MHz

Application:
10 to 14 Watt output linear power amplifiers in VHF band. Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Rth-c

17V 40V 4,5V 3,5A 2W 30W +175C -55 to +175C 5C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 10mA, IE = 0 Min Typ Max Unit 40 V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency V(BR)EBO IE = 1mA, IC = 0 ICBO IEBO hFE PO VCB = 25V IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 0,1A, Note 1

17 4,5 10

50 16 70

V V mA

0,5 mA 180 W %

VCC = 13,5V, Pin = 2W, f = 175MHz 15 60

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC2166 Silicon NPN Transistor Final RF Power Output

The 2SC2166 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

BCE

Features:
q

High Power Gain: Gpe >/= 13,8dB (VCC = 12V, PO = 6W, f = 27MHz)

Application:
3 to 4 Watt Output Power Class AB Amplifier Applications in HF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA

75V 75V 5V 4A 1.5W 12,5W +150C -55 to +150C 10C/W 83C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Symbol Test Conditions Min Typ Max Unit

Collector-Base Breakdown Voltage

V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 1mA, IC = 0 ICBO IEBO hFE PO VCB = 30V IE = 0 VEB = 4V, IC = 0 VCE = 12V, IC = 100mA, Note 1 VCC = 12V, Pin = 0,25W, f = 27MHz

75 75 5 35 6 55

70 7,5 60

V V V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

100 A 100 A 180 W %

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC2314 Silicon NPN Transistor RF Power Output, Driver


The 2SC2314 are silicon transistors in a TO-126 type package designed for 27MHz CB Transceiver Driver Applications.
ECB
Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage (RBE = 150 Ohms), VCER Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEB Collector Current, IC Continuous Peak Collector Dissipation (TA = +25C), PD Collector Dissipation (TC = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 75V 75V 45V 5V 1.0A 1.5A 750mW 5W +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Symbol Test Conditions ICBO VCB = 40V, IE = 0 IEBO VEB = 4V, IC = 0 V(BR)CBO IC = 10A, IE = 0 V(BR)CEO IC = 1mA, RBE = Infinity Emitter-Base Breakdown Voltage DC Current Gain Gain-Bandwidth Product V(BR)EBO IE = 10A, IC = 0 hFE fT VCE = 5V, IC = 500mA VCE = 10V, IC = 50mA Min Typ Max Unit - 1.0 A 75 75 45 5 60 1.0 320 MHz A V V V V

Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohms

180 250

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Output Power Collector Efficiency

VCE(sat) IC = 500mA, IB = 50mA VBE(sat) IC = 500mA, IB = 50mA Cob PO VCB = 10V, f = 1MHz

0.2 0.9 15

0.6 1.2 25 -

V V pF W %

VCC = 12V, f = 27MHz, Pi = 35mW 1.0 1.8 60 -

Medlem av HyperBanner Norge

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2SC2538 Silicon NPN Transistor RF Amplifier


The 2SC2538 is a silicon NPN epitaxial planer type transistor designed for RF amplifiers on VHF band mobile radio applications.
BCE

Features:
q

High Power Gain: Gpe >/= 10dB (VCC = 13,5V, PO = 0,5W, f = 175MHz)

Application:
Driver Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Ambient, RthJA

17V 40V 4V 0,4A 0,7W 3W +135C -55 to +150C 157C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 1mA, IC = 0 Min Typ Max Unit 40 V 17 4 V V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity Emitter-Base Breakdown Voltage

Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

ICBO IEBO hFE PO

VCB = 15V IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 500mA, Note 1

10

80

100 A 200 A 300 W %

VCC = 13.5V, Pin = 50mW, f = 175MHz 0,5 0,6 45 55

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC3133 Silicon NPN Transistor Final RF Power Output

The 2SC3133 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

BEC

Features:
q q

High Power Gain: Gpe >/= 14dB (VCC = 12V, PO = 13W, f = 27MHz) Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 16W, f = 27MHz

Application:
10 Watt Output Power SSB Amplifier Applications in HF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA

25V 70V 5V 6A 1.5W 20W +150C -55 to +150C 6.25C/W 83,3C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 1mA, IC = 0 ICBO IEBO hFE PO VCB = 30V IE = 0 VEB = 4V, IC = 0 VCE = 12V, IC = 10mA, Note 1 Min Typ Max Unit 60 V 25 5 10 50 16 70 V V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

500 A 500 A 180 W %

VCC = 12V, Pin = 0,5W, f = 27MHz 13 60

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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2SC3299 Power Amp Driver, Output Switch

The 2SC3299 are silicon transistors in a TO-220 type package designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
BCE

Features:
Low Collector-Emitter saturation Voltage q Fast Switching Speeds q Complementary Pairs Simplifies Design Absolute Maximum Ratings:
q

Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEB Collector Current, IC Continuous Peak (Note 1) Total Power Dissipation (TC = +25C), PD Total Power Dissipation (TA = +25C), PD Operating Junction Temperature Range, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA Lead Temperature (During Soldering, 1/8" from case, 5sec), TL

80V 5V 10A 20A 50W 1.67W -55 to +150C -55 to +150C 2.5C/W 75C/W +275C

Note 1. Pulse Width </= 6ms, Duty Cycle </= 50%. Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics Collector Cutoff Current Emitter Cutoff Current ON Characteristics DC Current Gain

ICES IEBO hFE

VCE = 80V, VBE = 0 VEB = 5V VCE = 1V, IC = 2A, TJ = +25C VCE = 1V, IC = 4A, TJ = +25C

60 40 -

130 50

10 100 1.0 1.5 -

A A

Collector-Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 400mA Base-Emitter Saturation Voltage Dynamic Characteristics Collector Capacitance Gain Bandwidth Product Switching Times Delay and Rise Time Storage Time Fall Time VBE(sat) IC = 8A, IB = 800mA Ccb fT VCB = 10V, ftest = 1MHz IC = 500mA, VCE = 10V, f = 20MHz

V V pF MHz

td + tr IC = 5A, IB1 = 500mA ts tf IC = 5A, IB1 = IB2 = 500mA

300 500 140

ns ns ns

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2SC4137 Power Amp Driver

The 2SC4137 is a High-Gain Amplifier Transistor for High-Frequency.

Features:
High DC Current Gain Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEB Collector Current, IC Continuous Total Power Dissipation (TC = +25C), PD Operating Junction Temperature Range, TJ Storage Temperature Range, Tstg 20V 6V 100mA DC 4W -55 to +150C -55 to +150C

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Symbol Test Conditions OFF Characteristics Collector Cutoff Current ICES VCE = 15V, VBE = 0 Emitter Cutoff Current DC Current Gain Transition frequency IEBO hFE fT VEB = 6V VCE = 3V, IC = 10mA VCE = 10V, IC = 10mA Min Typ Max Unit 820 400 0,5 0,5 2700 MHz A A

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KTC1006 Silicon NPN Transistor


The KTC1006 is a silicon NPN epitaxial planar type transistor designed for CB tranceiver TX driver amplifier application.
ECB

Features:
q q

High Power Gain Wide Area of Safe Operation.

Application:
Recommended for Driver Stage Application of AM Transmitter. Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

80V 80V 5V 800mA 1W +150C -55 to +150C

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector Cutoff Current Collector Cutoff Current DC Forward Current Gain Transition Frequency Symbol Test Conditions ICBO VCB = 60V IE = 0 ICER hFE fT VCB = 80V RBE = 220ohm VCE = 2V, IC = 150mA VCE = 5V, IC = 500mA Min Typ Max Unit - 0,1 A 100 150 0,1 MHz A

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KTC1969 Silicon NPN Transistor Final RF Power Output

The KTC1969 is a silicon NPN triple diffused type transistor designed for CB tranceiver TX final amplifier application and HF transceiver application.

BCE

Features:
q q

High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz) Wide Area of Safe Operation.

Application:
Recommended for Output Stage Application of AM 10W Transmitter. Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

25V 60V 5V 6A 20W +150C -55 to +150C

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions Min Typ Max Unit 60 V V(BR)CBO IC = 1mA, IE = 0

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Transition Frequency Power Output V(BR)EBO IE = 5mA, IC = 0 ICBO IEBO hFE fT PO VCB = 30V IE = 0 VEB = 4V, IC = 0 VCE = 12V, IC = 10mA, Note 1 VCE = 5V, IC = 500mA

25 5 55 100

10 100 180 -

V V A A

MHz W

VCC = 12V, Pin = 1W, f = 27MHz 16

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KTC2078 Silicon NPN Transistor Final RF Power Output

The KTC2078 is a silicon NPN triple diffused type transistor designed for CB tranceiver TX final amplifier application and HF transceiver application.

BCE

Features:
q q

High Power Gain Wide Area of Safe Operation.

Application:
Recommended for Output Stage Application of AM 4W Transmitter. Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

80V 80V 4V 4A 10W +150C -55 to +150C

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Symbol Test Conditions Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity Min Typ Max Unit 80 V

Emitter-Base Breakdown Voltage Collector Cutoff Current DC Forward Current Gain Transition Frequency Power Output

V(BR)EBO IE = 1mA, IC = 0 ICBO hFE fT PO VCB = 30V IE = 0 VCE = 5V, IC = 0,5mA VCE = 5V, IC = 500mA VCC = 12V, Pin = 0,3W, f = 27MHz

4 100 100 4

10 200 -

V A

MHz W

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MRF260 Silicon NPN Transistor RF Power Output

The MRF260 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications.

BEC

Features:
q q

High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz

Application:
4 to 5 Watt Output Power Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA

17V 35V 4V 12A 1.5W 12.5W +150C -55 to +150C 10C/W 83C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 10mA, IE = 0 V(BR)EBO IE = 5mA, IC = 0 ICBO IEBO hFE PO VCB = 25V IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 100mA, Note 1 VCC = 13.5V, Pin = 600mW, f = 175MHz Min Typ Max Unit 35 V 17 4 10 6 60 50 7 70 V V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

500 A 500 A 180 W %

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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MRF262 Silicon NPN Transistor RF Power Output

The MRF262 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications.

BEC

Features:
q q

High Power Gain: Gpe >/= 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz) Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 18W, f = 175MHz

Application:
10 to 14 Watt Output Power Amplifier in VHF Band Mobile Radio Applications Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA

17V 35V 4V 3.5A 1.5W 25W +175C -55 to +175C 6C/W 100C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 10mA, IE = 0 V(BR)EBO IE = 10mA, IC = 0 ICBO IEBO hFE PO VCB = 25V IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 100mA, Note 1 Min Typ Max Unit 35 V 17 4 10 50 15 70 V V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

1000 A 500 A 180 W %

VCC = 13.5V, Pin = 2.5W, f = 175MHz 14 60

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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MRF475 Silicon NPN Transistor Final RF Power Output

The MRF475 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

BCE

Features:
q q

High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz) Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz

Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA

25V 60V 5V 6A 1.7W 20W +150C -55 to +150C 6.25C/W 73.5C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 5mA, IC = 0 ICBO IEBO hFE PO VCB = 30V IE = 0 VEB = 4V, IC = 0 VCE = 12V, IC = 10mA, Note 1 Min Typ Max Unit 60 V 25 5 10 50 18 70 V V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

100 A 100 A 180 W %

VCC = 12V, Pin = 1W, f = 27MHz 16 60

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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MRF476 Silicon NPN Transistor Final RF Power Output

The MRF476 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

BCE Absolute Maximum Ratings: (TC = +25C unless otherwise specified)


Collector-Emitter Voltage (RBE = 150 Ohm), VCER Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Continuous Peak Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 75V 80V 5V 3A 5A 1.2W 10W +150C -55 to +150C

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 100A, IB = 0 V(BR)EBO IE = 100A, IC = 0 ICBO IEBO hFE VCB = 40V IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 0.5A Min Typ Max Unit 80 V 75 5 25 10 10 200 V V A A

Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance Power Output Collector Efficiency

VCE(sat) IC = 1A, IB = 0.1A VBE(sat) IC = 1A, IB = 0.1A fT Cob PO VCE = 10V, IC = 0.1A VCB = 10V, f = 1MHz

0.15 0.60 0.9 1.2 -

V V MHz

100 150 25 -

VCC = 12V, Pin = 0.2W, f = 27MHz 4.0 60

W %

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MRF485 Silicon NPN Transistor Final RF Power Output

The MRF485 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

Features:
q q

High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz) Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz

Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA

25V 60V 5V 6A 1.7W 20W +150C -55 to +150C 6.25C/W 73.5C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)

Parameter Collector-Base Breakdown Voltage

Symbol Test Conditions V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 5mA, IC = 0 ICBO IEBO hFE PO VCB = 30V IE = 0 VEB = 4V, IC = 0 VCE = 12V, IC = 10mA, Note 1

Min Typ Max Unit 60 V 25 5 10 50 18 70 V V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency

100 A 100 A 180 W %

VCC = 12V, Pin = 1W, f = 27MHz 16 60

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.

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MS1307 MOSFET N-Channel Power MOS-FET

The MS1307 is a MOS power N-Channel FET in a TO-220 type package designed for RF power applications.

GDS

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Transistor Database

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2N...

2N109 2N1305 2N1613 2N1893 2N2148 2N2166 2N2222A 2N2223A 2N2369A 2N2894 2N2906A 2N2917 2N2955 2N3053 2N3055 2N3055H 2N3375 2N3440 2N3442 >150MHz 2N3502 2N3571 >10MHz 2N3632 2N3700 100MHz 2N3708 2N3725 2N3741 2N3767 2N3772 2N3792 2N3820 2N3824 2N3904 2N3909

GE-P 35V 0.15A 0.165W GE-P 30V 0.3A 0.15W 5MHz SI-N 75V 1A 0.8W 60MHz SI-N 120V 0.5A 0.8W GE-P 60V 5A 12.5W SI-P 15V 50mA 0.15W 10MHz SI-N 40V 0.8A 0.5W 300MHz 2xSI-N 100V 0.5A 0.6W >50 SI-N 40V 0.2A .36W 12/18ns SI-P 12V 0.2A 1.2W 60/90ns SI-P 60V 0.6A 0.4W 45/100 SI-N 45V 0.03A >60Mz GE-P 40V 0.1A 0.15W 200MHz SI-N 60V 0.7A 5W 100MHz SI-N 100V 15A 115W 800kHz SI-N 100V 15A 115W 800kHz SI-N 40V 0.5A 11.6W 500MHz SI-N 300V 1A 10W 15MHz SI-N 160V 10A 117W 0.8MHz SI-P 45V 0.6A 0.7W 200MHz SI-N 30V 0.05A 0.2W 1.4GHz SI-N 40V 0.25A 23W 400MHz SI-N 140V 1A 0.5W 200MHz SI-N 30V 0.03A 0.36W 80MHz SI-N 80V 0.5A 1W 35/60ns SI-N 80V 4A 25W >4MHz SI-N 100V 4A 20W >10MHz SI-N 100V 20A 150W POWER SI-P 80V 10A 150W 4MHz P-FET 20V 15mA 0.36W N-FET 50V 10mA 0.3W <250E SI-N 60V 0.2A .35W 300MHz P-FET 20V 10MA 0.3W

| | | | | | | | | | | | | | | | | | |

2N1304 2N1307 2N1711 2N2102 2N2165 2N2219A 2N2223 2N2243A 2N2857 2N2905A 2N2907A 2N2926 2N3019 2N3054 2N3055 2N3251 2N3439 2N3441 2N3495

GE-N 25V 0.3A 0.15W 10MHz GE-P 30V 0.3A 0.15W B>60 SI-N 75V 1A 0.8W 70MHz SI-N 120V 1A 1W <120MHz SI-P 30V 50mA 0.15W 18MHz SI-N 40V 0.8A 0.8W 250MHz 2xSI-N 100V 0.5A 0.6W >50 SI-N 120V 1A 0.8W 50MHz SI-N 30V 40mA 0.2W >1GHz SI-P 60V 0.6A 0.6W 45/100 SI-P 60V 0.6A 0.4W 45/100 SI-N 25V 0.1A 0.2W 300MHz SI-N 140V 1A 0.8W 100MHz SI-N 90V 4A 25W 3MHz SI-N 100V 15A 115W 800kHz SI-P 50V 0.2A 0.36W SI-N 450V 1A 10W 15MHz SI-N 160V 3A 25W POWER SI-P 120V 0.1A 0.6W SI-N 65V 0.35A 7W 500MHz SI-N 250/175V 2A 35W SI-N 40V 0.2A 0.2W SI-N 30V 0.03A 0.36W SI-N 100V 10A 150W 4MHz SI-P 60V 4A 25W >4MHz SI-N 300V 0.05A 1W >30MHz SI-N 50V 30A 150W POWER SI-N 160V 16A 150W POWER N-FET 25V 20mA 0.36W N-FET 50V 2.5mA 0.3W SI-N 55V 0.4A 1W 175MHz SI-P 40V 0.2A .35W 250MHz N-FET 50V 5mA 0.25W

| 2N3553 | 2N3583 | 2N3646 | 2N3707 | | | | | | | | | | 2N3716 2N3740 2N3742 2N3771 2N3773 2N3819 2N3821 2N3866 2N3906 2N3958

2N3963 2N4001 2N4036 2N4126 2N4236 2N428 2N4287 2N4302 2N4348 140KHz 2N4391 2N4393 2N4403 2N4420 2N4906 2N4923 2N5090 2N5116 2N5179 2N5240 2N5308 2N5322 2N5416 2N5457 2N5460 2N5462 2N5485 2N5589 2N5672 2N5682 2N5686 >900MHz 2N5771 2N5878 2N5884 2N6031 2N6059 2N6098 AFPOWSWITCH 2N6109 2N6211 2N6248 2N6287 2N6356 2N6427 2N6488 2N6517 2N6547 2N6609 2N6661 2N6678 2N6718 2N6728 2N7002 2N918

SI-P 80V 0.2A 0.36W >40MHz SI-N 100V 1A 15W 40MHz SI-P 90V 1A 1W 60MHz SI-P 25V 200mA HF SI-P 80V 3A 1W >3MHz GE-P 30V 0.4A 0.15W B>60 SI-N 45V 0.1A 0.25W 40MHz N-FET 30V 0.5mA 0.3W SI-N 140V 10A 120W >0.2MHz N-FET 40V 50mA 30E Up<10V N-FET 40V 5mA 100E Up<3V SI-P 40V 0.6A 200MHz SI-N 40V 0.2A 0.36W SI-P 80V 5A 87.5W >4MHz SI-N 80V 1A 30W SI-N 55V 0.4A 4W 5mA P-FET 30V 5mA 150E Up<4V SI-N 20V 50mA 0.2W >1GHz SI-N 375V 5A 100W >2MHz N-DARL 40V 0.3A 0.4W B>7K SI-P 100V 2A 10W AFSWITCH SI-P 350V 1A 10W 15MHz N-FET 25V 1mA Up<6V P-FET 40V 5mA Up<6V GEN.P P-FET 40V 16mA Up<9V GEN. P-FET 25V 4mA Up<4V SI-N 36V 0.6A 3W 175MHz SI-N 150V 30A 140W 0.5us SI-N 120V 1A 1W >30MHz SI-N 80V 50A 300W >2MHz SI-P SI-N SI-P SI-P SI-N SI-N 15V 50mA 625mW >850MHz 80V 10A 150W >4MHz 80V 25A 200W AFPOWSW 140V 16A 200W 1MHz 100V 12A 150W 70V 10A 75W AFPOWSWITCH

| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |

2N3972 2N4033 2N409 2N4220 2N427 2N4286 2N4291 2N4347 2N4351 2N4392 2N4401 2N4416 2N4427 2N4920 2N5038 2N5109 2N5154 2N5192 2N5298 2N5320 2N5401 2N5433 2N5458 2N5461 2N5484 2N5551 2N5639 2N5680 2N5684 2N5770 2N5876 2N5879 2N5886 2N6050 2N6083 2N6099 2N6124 2N6213 2N6284 2N6292 2N6422 2N6476 2N6491 2N6520 2N6556 2N6660 2N6675 2N6716 2N6725 2N697 2N914 2SA1006B

N-FET 40V 50mA 1.8W SI-P 80V 1A 0.8W 150MHz GE-P 13V 15mA 80mW 6.8MHz N-FET 30V 0.2A GE-P 30V 0.4A 0.15W B>40 SI-N 30V 0.05A 0.25W SI-P 40V 0.2A 0.25W 150MH SI-N 140V 5A 100W 0.8MHz N-FET 30V 30mA 0.3W N-FET 40V 25mA 60E Up<5V SI-N 60V 0.6A 200MHz N-FET 30V 15mA VHF/UHF SI-N 40V 0.4A 1W 175MHz SI-P 80V 1A 30W SI-N 150V 20A 140W 0.5us SI-N 40V 0.5A 2.5W 1.5GHz SI-N 100V 2A 10W SI-N 80V 4A 40W 2MHz SI-N 80V 4A 36W >0.8MHz SI-N 100V 2A 10W AFSWITCH SI-P 160V 0.6A 0.31W N-FET 25V 0.4A 0.3W 7E N-FET 25V 2.9mA UNI P-FET 40V 9mA 0.31W N-FET 25V 5mA 0.31W SI-N 180V 0.6A 0.31W VID. N-FET 30V 10mA 310mW SI-P 120V 1A 1W SI-P 80V 50A 200W SI-N 30V 0.05A 0.7W SI-P 80V SI-N 60V SI-N 80V P-DARL+D SI-N 36V SI-N 70V 10A 150W >4MHz 10A 150W >4MHz 25A 200W >4MHz 60V 12A 100W 5A PQ=30W 175MHz 10A 75W

SI-P 60V 7A 40W 10MHz SI-P 275V 2A 20W 20MHz SI-P 110V 15A 125W >6MHz P-DARL 100V 20A 160W N-DARL 50V 20A 150W B>150 N-DARL 40V 0.5A 0.625W SI-N 90V 15A 75W SI-N 350V 0.5A 0.625W >40 SI-N 850/400V 15A 175W SI-P 160V 16A 150W 2MHz N-FET 90V 2A 6.2W 4E SI-N 400V 15A SI-N 100V 2A 2W 50MHz SI-P 60V 2A 2W >50MHz N-FET 60V 0.115A 0.2W 7E5 SI-N 30V 50mA 0.2W 600MHz

SI-P 45V 4A 40W SI-P 400V 2A 35W >20MHz N-DARL 100V 20A 160W B>75 SI-N 80V 7A 40W SI-P 500V 2A 35W >10MHz SI-P 130V 4A 16W 5MHz SI-P 90V 15A 30W SI-P 350V 0.5A 0.625W >40 SI-P 100V 1A 10W >75MHz N-FET 60V 2A 6.25W 3E SI-N 400V 15A SI-N 60V 2A 2W 50MHz N-DARL 60V 2A 1W B>15K SI-N 60V 1A 0.6W <50MHz SI-N 40V 0.5A <40/40NS SW SI-P 250V 1.5A 25W 80MHz

2SA1009 2SA1013 2SA1016 110MHz 2SA1018 2SA1027 2SA1034 2SA1048 100MHz 2SA1061 2SA1065 2SA1103 2SA1110 2SA1112 2SA1120 200MHz 2SA1124 2SA1141 2SA1145 2SA1156 2SA1163 2SA1185 2SA1200 120MHz 2SA1206 150MHz 2SA1208 2SA1210 2SA1215 2SA1220A 2SA1225 2SA1232 2SA1242 2SA1249 2SA1262 2SA1265N 2SA1268 200MHz 2SA1271 2SA1282 2SA1286 2SA1292 2SA1294 2SA1296 2SA1300 2SA1303 2SA1306A 2SA1309 2SA1315 2SA1317 2SA1319 100MHz 2SA1328 2SA1345 2SA1348

SI-P 350V 2A 15W SI-P 160V 1A 0.9W 50MHz SI-P 100V 0.05A 0.4W 110MHz SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P 250V 70mA 0.75W >50MHz 50V 0.2A 0.25W 100MHz 35V 50mA 0.2W 200MHz 50V 0.15A 0.2W 80MHz 100V 6A 70W 15MHz 150V 10A 120W 50MHz 100V 7A 70W 20MHz 120V 0.5A 5W 250MHz 180V 1A 20W 200MHz 35V 5A 170MHz 150V 50mA 1W 200MHz 115V 10A 100W 90MHz 150V 50mA 0.8W 200MHz 400V 0.5A 10W POWER 120V 0.1A 100MHz 50V 7A 60W 100MHz 150V 50mA 0.5W 120MHz

| 2SA1011 | 2SA1015 | 2SA1017 | | | | | | | | | | | | | | | | | 2SA1020 2SA1029 2SA1037 2SA1049 2SA1062 2SA1084 2SA1106 2SA1111 2SA1115 2SA1123 2SA1127 2SA1142 2SA1150 2SA1160 2SA1170 2SA1186 2SA1201

SI-P 160V 1.5A 25W 120MHz SI-P 50V 0.15A 0.4W 80MHz SI-P 120V 50mA 0.5W SI-P SI-P SI-P SI-P SI-N SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P 50V 2A 0.9W 100MHz 30V 0.1A 0.2W 280MHz 50V 0.4A 140MHz FR 120V 0.1A 0.2W 120V 7A 80W 15MHz 90V 0.1A 0.4W 90MHz 140V 10A 100W 20MHz 150V 1A 20W 200MHz 50V 0.2A 200MHz UNI 150V 50mA 0.75W 60V 0.1A 0.4W 200MHz 180V 0.1A 8W 180MHz 35V 0.8A 0.3W 120MHz 20V 2A 0.9W 150MHz 200V 17A 200W 20MHz 150V 10A 100W 120V 0.8A 0.5W

SI-P 15V 0.05A 0.6W SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-N SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P 180V 0.07A 0.9W 200V 0.14A 10W 160V 15A 150W 50MHz 120V 1.2A 20W 160MHz 160V 1.5A 15W 100MHz 130V 10A 100W 60MHz 35V 5A 1W 170MHz 180V 1.5A 10W 120MHz 60V 4A 30W 15MHz 140V 10A 100W 30MHz 120V 0.1A 0.3W 100MHz 30V 0.8A 0.6W 120MHz 20V 2A 0.9W 80MHz 30V 1.5A 0.9W 90MHz 80V 15A 70W 100MHz 230V 15A 130W 20V 2A 0.75W 120MHz 10V 2A 0.75W 140MHz 150V 14A 125W 50MHz 180V 1.5A 20W 100MHz 30V 0.1A 0.3W 80MHz 80V 2A 0.9W 0.2us 60V 0.2A 0.3W 200MHz 180V 0.7A 0.7W 120MHz

| 2SA1207 | | | | | | | | | | | | | | | | | | | | | | | | 2SA1209 2SA1213 2SA1216 2SA1221 2SA1227A 2SA1241 2SA1244 2SA1261 2SA1264N 2SA1266 2SA1270 2SA1275 2SA1283 2SA1287 2SA1293 2SA1295 2SA1298 2SA1302 2SA1306 2SA1307 2SA1310 2SA1316 2SA1318 2SA1321

SI-P 180V 70mA 0.6W SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P 180V 0.14A 10W 50V 2A 0.5W 120MHz 180V 17A 200W 40MHz 160V 0.5A 1W 45MHz 140V 12A 120W 60MHz 50V 2A 10W 100MHz 60V 5A 20W 60MHz 100V 10A 60W POWER 120V 8A 80W 30MHz 50V 0.15A 0.4W POWER 35V 0.5A 0.5W 160V 1A 0.9W 20MHz 60V 1A 0.9W 85MHz 50V 1A 0.9W 90MHz 100V 5A 30W 0.2us 230V 17A 200W 35MHz 30V 0.8A 0.2W 120MHz 200V 15A 150W 25MHz 160V 1.5A 20W 60V 5A 20W 0.1us 60V 0.1A 0.3W 200MHz 80V 0.1A 0.4W 50MHz 60V 0.2A 0.5W 200MHz 250V 50mA 0.9W

SI-P 60V 12A 40W 0.3us SI-N 50V 0.1A 0.3W 250MHz SI-P 50V 0.1A 200MHz

| 2SA1329 | 2SA1346 | 2SA1349

SI-P 80V 12A 40W 0.3us SI-P 50V 0.1A 200MHz P-ARRAY 80V 0.1A 0.4W 170

2SA1352 2SA1358 2SA1360 2SA1370 2SA1376 2SA1381 2SA1383 2SA1387 2SA1396 2SA1400 2SA1405 2SA1407 2SA1428 2SA1441 2SA1450 2SA1460 2SA1475 2SA1477 2SA1489 2SA1491 2SA1507 2SA1516 2SA1535A 2SA1539 2SA1541 2SA1566 2SA1568 2SA1593 2SA1606 2SA1624 2SA1626 2SA1643 2SA1668 2SA1671 2SA1673 100/400ns 2SA1684 20MHz 2SA1695 2SA1706 2SA1726 2SA1803 2SA1930 2SA329 2SA473 2SA493 2SA562 2SA608 2SA620 2SA628 2SA642 2SA653 2SA699 2SA720 100MHz

SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-N SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P

200V 0.1A 5W 70MHz 120V 1A 10W 120MHz 150V 50mA 5W 200MHz 200V 0.1A 1W 150MHz 200V 0.1A 0.75W 120MHz 300V 0.1A 150MHz 180V 0.1A 10W 180MHz 60V 5A 25W 80MHz 100V 10A 30W 400V 0.5A 10W 120V 0.3A 8W 500MHz 150V 0.1A 7W 400MHz 50V 2A 1W 100MHz 100V 5A 25W <300ns 100V 0.5A 0.6W 120MHz 60V 1A 1W <40NS 120V 0.4A 15W 500MHz 180V 0.14A 10W 150MHz 80V 6A 60W 20MHz 140V 10A 100W 20MHz 180V 1.5A 10W 120MHz 180V 12A 130W 25MHz 180V 1A 40W 200MHz 120V 0.3A 8W 400MHz 200V 0.2A 7W 300MHz 120V 0.1A 0.15W 130MHz 60V 12A 40W 120V 2A 15W 120MHz 180V 1.5A 15W 100MHz 300V 0.1A 0.5W 70MHz 400V 2A 1W 0.5/2.7us 50V 7A 25W 75MHz 200V 2A 25W 20MHz 120/120V 8A 75W 20MHz 180V 15A 85W 20MHz

| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |

2SA1357 2SA1359 2SA1361 2SA1371E 2SA1380 2SA1382 2SA1386 2SA1392 2SA1399 2SA1403 2SA1406 2SA1413 2SA1431 2SA1443 2SA1451 2SA1470 2SA1476 2SA1488 2SA1490 2SA1494 2SA1515 2SA1519 2SA1538 2SA1540 2SA1553 2SA1567 2SA1577 2SA1601 2SA1615 2SA1625 2SA1633 2SA1667 2SA1670 2SA1672 2SA1680

SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P

35V 5A 10W 170MHz 40V 3A 10W 100MHz 250V 50mA 80MHz 300V 0.1A 1W 150MHz 200V 0.1A 1.2W 120V 2A 0.9W 0.2us 160V 15A 130W 40MHz 60V 0.2A 0.4W 200MHz 55V 0.4A 0.9W 150MHz 80V 0.5A 10W 800MHz 200V 0.1A 7W 400MHz 600V 1A 10W 26MHz 35V 5A 1W 170MHz 100V 10A 30W 60V 12A 30W 70MHz 80V 7A 25W 100MHz 200V 0.2A 15W 400MHz 60V 4A 25W 15MHz 120V 8A 80W 20MHz 200V 17A 200W 20MHz 40V 1A 0.3W 150MHz 50V 0.5A 0.3W 200MHz 120V 0.2A 8W 400MHz 200V 0.1A 7W 300MHz 230V 15A 150W 25MHz 50V 12A 35W 40MHz 32V 0.5A 0.2W 200MHz 60V 15A 45W 30V 10A 15W 180MHz 400V 0.5A 0.75W 150V 10A 100W 20MHz 150V 2A 25W 20MHz 80V 6A 60W 20MHz 140V 10A 80W 20MHz 60V 2A 0.9W

SI-P 120V 1.5A 20W 150MHz SI-P SI-P SI-P SI-P SI-P GE-P SI-P SI-P SI-P SI-N SI-P SI-P SI-P SI-P SI-P SI-P 140V 10A 80W 20MHz 60V 2A 1W 80V 6A 50W 20MHz 80V 6A 55W 30MHz 180V 2A 20W 200MHz 15V 10mA 0.05W 30V 3A 10W 100MHz 50V 0.05A 0.2W 80MHz 30V 0.5A 0.5W 200MHz 40V 0.1A 0.1W 180MHz 30V 0.05A 0.2W 120MHz 30V 0.1A 100MHz 30V 0.2A 0.25W 200MHz 150V 1A 15W 5MHz 40V 2A 10W 150MHz 60V 0.5A 0.6W 200MHz

| 2SA1694 | | | | | | | | | | | | | | | | 2SA1703 2SA1708 2SA1776 2SA1837 2SA1962 2SA467 2SA483 2SA495 2SA566 2SA614 2SA626 2SA639 2SA643 2SA684 2SA708A 2SA725

SI-P 120/120V 8A 80W SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P 30V 1.5A 1W 180MHz 120V 1A 1W 120MHz 400V 1A 1W 230V 1A 20W 70MHz 230V 15A 130W 25MHz 40V 0,4A 0,3W 150V 1A 20W 9MHz 35V 0.1A 0.2W 200MHz 100V 0.7A 10W 100MHz 80V 1A 15W 30MHz 80V 5A 60W 15MHz 180V 50mA 0,25W 40V 0.5A 0.5W 180MHz 60V 1A 1W 200MHz 100V 0.7A 0.8W 50MHz 35V 0.1A 0.15W

2SA733 2SA747 2SA762 2SA768 2SA770 2SA777 60MHz 2SA781 2SA794A 2SA814 100MHz 2SA817 2SA836 300MHz 2SA839 140MHz 2SA858 120MHz 2SA872A 140MHz 2SA885 2SA893 2SA914 80MHz 2SA916 200MHz 2SA933 2SA935 2SA940 150MHz 2SA949 120MHz 2SA966 2SA970 2SA984 2SA988 2SA992 100MHz 2SB1009 2SB1012K 2SB1015 2SB1017 2SB1020 2SB1035 2SB1050 2SB1065 2SB1068 2SB1077 2SB1098 2SB1100 2SB1109S 2SB1120 2SB1123 2SB1133 2SB1135

SI-P SI-P SI-P SI-P SI-P SI-P

60V 0.15A 0.25W 50MHz 120V 10A 100W 15MHz 110V 2A 23W 80MHz 60V 4A 30W 10MHz 60V 6A 40W 10MHz 80V 0.5A 0.75W 120MHz

| | | | | |

2SA738 2SA756 2SA765 2SA769 2SA771 2SA778A

SI-P SI-P SI-P SI-P SI-P SI-P

25V 1.5A 8W 160MHz 100V 6A 50W 20MHz 80V 6A 40W 10MHz 80V 4A 30W 10MHz 80V 6A 40W 2MHz 180V 0.05A 0.2W

SI-P 20V 0.2A 0.2W <80/16 SI-P 120V 0.5A 5W 120MHz SI-P 120V 1A 15W 30MHz SI-P 80V 0.3A 0.6W 100MHz SI-P 55V 0.1A 0.2W 100MHz SI-P 150V 1.5A 25W 6MHz SI-P 150V 50mA 0.5W 100MHz SI-P 120V 50mA 0.3W 120MHz SI-P 45V 1A 5W 200MHz SI-P 90V 50mA 0.3W SI-P 150V 0.05A 200MHz SI-P 160V 0.05A 1W 80MHz SI-P 50V 0.1A 0.3W SI-P 80V 0.7A 0.75W 150MHz SI-P 150V 1.5A 25W 4MHz SI-P 150V 50mA 0.8W 120MHz SI-P SI-P SI-P SI-P SI-P 30V 1.5A 0.9W 120MHz 120V 0.1A 100MHz 60V 0.5A 0.5W 120MHz 120V 0.05A 0.5W 100V 0.05A 0.2W

| 2SA794 | 2SA812 | 2SA816 | 2SA817A | 2SA838 | 2SA841 | 2SA872 | 2SA884 | 2SA886 | 2SA900 | 2SA915 | 2SA921 | 2SA934 | 2SA937 | 2SA941 | 2SA965 | | | | | | | | | | | | | | | | | | | | | | 2SA968 2SA982 2SA985 2SA991 2SA995 2SB1010 2SB1013 2SB1016 2SB1018 2SB1023 2SB1039 2SB1055 2SB1066 2SB1071 2SB1086 2SB1099 2SB1109 2SB1117 2SB1121T 2SB1132 2SB1134 2SB1136

SI-P 100V 0.5A 5W 120MHz SI-P 50V 0.1A 0.15W SI-P 80V 0.75A 1.5W SI-P 80V 0.4A 0.8W 100MHz SI-P 30V 30mA 0.25W SI-P 60V 0.05A 0.2W SI-P 90V 0.05A 0.2W SI-P 65V 0.2A 0.27W SI-P 50V 1.5A 1.2W SI-P 18V 1A 1.2W SI-P 120V 0.05A 0.8W SI-P 120V 20mA 0.25W SI-P 40V 0.7A 0.75W SI-P 50V 0.1A 0.3W 140MHz SI-P 120V 0.05A 0.3W SI-P 120V 0.8A 0.9W SI-P SI-P SI-P SI-P SI-P 160V 1.5A 25W 100MHz 140V 8A 80W 20MHz 120V 1.5A 25W 180MHz 60V 0.1A 0.5W 90MHz 100V 0.05A 0.4W

SI-P 40V 2A 10W 100MHz P-DARL 120V 1.5A 8W SI-P 60V 3A 25W 0.4us SI-P 80V 4A 25W 9MHz P-DARL+D 100V 7A 30W 0.8us SI-P 30V 1A 0.9W 100MHz SI-P 30V 5A 1W 120MHz SI-P 60V 3A 10W SI-P 20V 2A 0.75W 180MHz P-DARL 60V 4A 40W B>1K P-DARL+D 100V 5A 20W B=80 P-DARL+D 100V 10A 30W B=6 SI-P 160V 0.1A 1.25W SI-P 20V 2.5A 0.5W 250MHz SI-P 60V 2A 0.5W 150MHz SI-P 60V 3A 25W 40MHz SI-P 60V 7A 30W 10MHz

SI-P 40V 2A 0.75W 100MHz SI-P 20V 2A 0.7W SI-P 100V 5A 30W 5MHz SI-P 100V 7A 30W 0.4us P-DARL+D 60V 3A 20W B=5K SI-P 100V 4A 40W 20MHz SI-P 120V 6A 70W 20MHz SI-P 50V 3A 1W 70MHz SI-P 40V 4A 25W 150MHz SI-P 160V 1.5A 20W 50MHz P-DARL+D 100V 8A 25W B=6K SI-P 160V 0.1A 1.25W SI-P 30V 3A 1W 280MHz SI-P 30V 2A 150MHz SI-P 40V 1A 0.5W 150MHz SI-P 60V 5A 25W 30W SI-P 60V 12A 30W 10MHz

2SB1140 2SB1143 2SB1149 2SB1154 2SB1162 2SB1166 2SB1182 2SB1185 2SB1187 2SB1202 2SB1204 2SB1212 2SB1236 2SB1238 2SB1243 2SB1255 2SB1274 50MHz 2SB1292 2SB1318 2SB1329 2SB1331 2SB1361 2SB1373 2SB1382 2SB1420 2SB1429 2SB1468 2SB1490 2SB1503 2SB1557 2SB1560 2SB1587 2SB206 2SB337 2SB481 2SB511E 2SB527 2SB536 2SB541 2SB546A 2SB557 100MHz 2SB561 2SB598 2SB601 2SB621 2SB631 2SB633 2SB641 2SB649A 2SB673 2SB681 2SB700 2SB705

SI-P 25V 5A 10W 320MHz SI-P 60V 4A 10W 140MHz P-DARL 100V 3A 15W B=10K SI-P 130V 10A 70W 30MHz SI-P 160V 12A 120W SI-P 60V 8A 20W 130MHz SI-P 40V 2A 10W 100MHz SI-P 50V 3A 25W 70MHz SI-P 80V 3A 35W SI-P 60V 3A 15W 150MHz SI-P 60V 8A 20W 130MHz SI-P 160V 1.5A 0.9W 50MHz SI-P 120V 1.5A 1W 50MHz SI-P 80V 0.7A 1W 100MHz SI-P 60V 3A 1W P-DARL 160V 8A 100W B>5K SI-P 60V 3A 30W 100MHz SI-P 80V 5A 30W P-DARL+D 100V 3A 1W B>200 SI-P 40V 1A 1.2W 150MHz SI-P 32V 2A 1.2W 100MHz SI-P 150V 9A 100W 15MHz SI-P 160V 12A 2.5W 15MHz P-DARL+D 120V 16A 75W B>2 SI-P 120V 16A 80W 50MHz SI-P 180V 15A 150W 10MHz SI-P 60/30V 12A 25W P-DARL 160V 7A 90W B>5K P-DARL 160V 8A 120W B>5K P-DARL 140V 7A 100W B>5K P-DARL 160V 10A 100W 50MHz P-DARL+D 160V 8A 70W B>5K GE-P 80V 30A 80W GE-P 50V 7A 30W LF-POWER GE-P 32V 1A 6W 15KHz SI-P 35V 1.5A 10W 8MHz SI-P 110V 0.8A 10W 70MHz SI-P 130V 1.5A 20W 40MHz SI-P 110V 8A 80W 9MHz SI-P 200V 2A 25W 5MHz SI-P 120V 8A 80W SI-P 25V 0.7A 0.5W SI-P 25V 1A 0.5W 180MHz P-DARL 100V 5A 30W SI-N 25V 1.5A 0.6W 200MHz SI-P 100V 1A 8W SI-P 100V 6A 40W 15MHz SI-P 30V 0.1A 120MHz SI-P 160V 1.5A 1W 140MHz P-DARL+D 100V 7A 40W 0.8us SI-N 150V 12A 100W 13MHz SI-P 160V 12A 100W SI-P 140V 10A 120W 17MHz

| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |

2SB1141 2SB1146 2SB1151 2SB1156 2SB1163 2SB1168 2SB1184 2SB1186 2SB1188 2SB1203 2SB1205 2SB1223 2SB1237 2SB1240 2SB1254 2SB1258 2SB1282 2SB1302 2SB1326 2SB1330 2SB1353E 2SB1370 2SB1375 2SB1393 2SB1425 2SB1434 2SB1470 2SB1493 2SB1556 2SB1559 2SB1565 2SB1624 2SB324 2SB407 2SB492 2SB524 2SB531 2SB537 2SB544 2SB549 2SB560 2SB564 2SB600 2SB605 2SB621A 2SB632 2SB637 2SB647 2SB656 2SB676 2SB688 2SB703 2SB707

SI-P 20V 1.2A 10W 150MHz P-DARL 120V 6A 25W SI-P 60V 5A 20W SI-P 130V 20A 100W SI-P 170V 15A 150W SI-P 120V 4A 20W 130MHz SI-P 60V 3A 15W 70MHz SI-P 120V 1.5A 20W 50MHz SI-P 40V 2A 100MHz SI-P 60V 5A 20W 130MHz SI-P 25V 5A 10W 320MHz P-DARL+D 70V 4A 20W 20MHz SI-P 40V 1A 1W 150MHz SI-P 40V 2A 1W 100MHz P-DARL 160V 7A 70W P-DARL+D 100V 6A 30W B>1K P-DARL+D 100V 4A 25W SI-P 25V 5A 320MHz SI-P 30V 5A 0.3W 120MHz SI-P 32V 0.7A 1.2W 100MHz SI-P 120V 1.5A 1.8W 50MHz SI-P 60V 3A 30W 15MHz SI-P 60V 3A 25W 9MHz SI-P 30V 3A 2W 30MHz SI-P 20V 2A 1W 90MHz SI-P 50V 2A 1W 110MHz P-DARL 160V 8A 150W B>5K P-DARL 160/140V 7A 70W 20 P-DARL 140V 8A 120W B>5K P-DARL 160V 8A 80W B>5K SI-P 80V 3A 25W 15MHz P-DARL 110V 6A 60W B>5K GE-P 32V 1A 0.25W GE-P 30V 7A 30W GE-P 25V 2A 6W SI-P 60V 1.5A 10W 70MHz SI-P 90V 6A 50W 8MHz SI-P 130V 1.5A 20W 60MHz SI-P 25V 1A 0.9W 180MHz SI-P 120V 0.8A 10W 80MHz SI-P 100V 0.7A 0.9W SI-P 30V 1A 0.8W SI-P 200V 15A 200W 4MHz SI-P 60V 0.7A 0.8W 120MHz SI-N 50V 1A 0.75W 200MHz SI-P 25V 2A 10W 100MHz SI-P 50V 0.1A 0.3W 200MHz SI-P 120V 1A 0.9W 140MHz SI-P 160V 12A 125W 20MHz P-DARL 100V 4A 30W 0.15us SI-P 120V 8A 80W 10MHz SI-P 100V 4A 40W 18MHz SI-P 80V 7A 40W POWER

2SB709 2SB720 2SB731 2SB734 2SB740 2SB750 2SB764 2SB766 2SB774 2SB776 150MHz 2SB791 2SB795 250MHz 2SB810 250MHz 2SB816 2SB817F 2SB822 2SB825 2SB827 2SB829 2SB861 2SB865 2SB882 2SB884 2SB891 2SB895A 2SB908 2SB922 2SB938A 2SB941 2SB946 2SB953A 2SB975 2SB985 2SB988 2SC1008 >80MHz 2SC1014 2SC1030 2SC1047 2SC1051 2SC1070 2SC109 2SC1106 2SC1115 2SC1161 2SC1172 2SC1213C 2SC1215 2SC1226 2SC1247A 2SC1312 2SC1343

SI-P 45V 0.1A 0.2W 80MHz SI-P 200V 2A 25W 100MHz SI-P 60V 1A 10W 75MHz SI-P 60V 1A 1W 80MHz SI-P 70V 1A 0.9W P-DARL+D 60V 2A 35W B>100 SI-P 60V 1A 0.9A 150MHz SI-P 30V 1A 200MHz SI-P 30V 0.1A 0.4W 150MHz SI-P 120V 7A 70W 15MHz P-DARL+D 120V 8A 40W B>10 P-DARL+D 80V 1.5A 10W B<3 SI-P 30V 0.7A 0.35W 160MHz SI-P 150V 8A 80W 15MHz SI-P 160V 12A 90W 15MHz SI-P 40V 2A 0.75W 100MHz SI-P 60V 7A 40W 10MHz SI-P 60V 7A 80W 10MHz SI-P 60V 15A 90W 20MHz SI-P 200V 2A 30W P-DARL 80V 1.5A 0.9W P-DARL+D 70V 10A 40W B>5K P-DARL 110V 3A 30W B=4K SI-P 40V 2A 5W 100MHz P-DARL 60V 1A B=8000 P-DARL+D 80V 4A 15W 0.15us SI-P 120V 12A 80W 20MHz P-DARL+D 60V 4A 40W B>1K SI-P 60V 3A 35W POWER SI-P 130V 7A 40W 30MHz SI-P 50V 7A 30W 150MHz P-DARL+D 100V 8A 40W B>6K SI-P 60V 3A 1W 150MHz SI-P 60V 3A 30W <400/2200 SI-N 80V 0.7A 0.8W 75MHz SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-P SI-N SI-N SI-N SI-N SI-N SI-N SI-N 50V 1.5A 7W 150V 6A 50W 30V 20mA 0.4W 650MHz 150V 7A 60W 8MHz 30V 20mA 900MHz 50V 0.6A 0.6W 350V 2A 80W 140V 10A 100W 10MHz 160V 12A 120W 1500V 5A 50W 50V 0.5A 0.4W UNI 30V 50mA 0.4W 1.2GHZ 40/50V 2A 10W 150MHz 50V 0.5A 0.4W 60MHz 35V 0.1A 0.15W 100MHz 150V 10A 100W 14MHz

| | | | | | | | | |

2SB716 2SB727 2SB733 2SB739 2SB744 2SB753 2SB765 2SB772 2SB775 2SB788

SI-P 120V 0.05A 0.75W P-DARL+D 120V 6A 50W B>1K SI-P 20V 2A 1W >50MHz SI-P 20/16V 2A 0.9W 80MHz SI-P 70V 3A 10W 45MHz SI-P 100V 7A 40W 0.4us P-DARL+D 120V 3A 30W B>1K SI-P 40V 3A 10W 80MHz SI-P 100V 6A 60W 13MHz SI-P 120V 0.02A 0.4W P-DARL+D 60V 1.5A 10W B=7 SI-P 20V 0.7A 0.25W SI-P 20V 0.7A 0.25W SI-P 160V 12A 100W SI-P 50V 1.5A 1W 150MHz SI-P 60V 5A 30W 30 MHz SI-P 60V 12A 40W 10MHz SI-P 60V 12A 80W 10MHz SI-P 50V 4A 40W NF/S-L SI-P 140V 10A 100W 15MHz SI-P 30V 5A 1W 120MHz P-DARL+D 70V 15A 70W B=5K P-DARL+D 110V 3A 35W B=4K SI-P 60V 2A 1W P-DARL+D 100V 10A 80W B>1 SI-P 40V 1A 1W 150MHz SI-P 30V 2A 0.75W SI-P 200V 2A 35W 30MHz SI-P 130V 5A 40W 30MHz P-DARL+D 80V 4A 40W B>1K P-DARL+D 120V 10A 50W B=4 SI-P 27V 5A 0.75W 120MHz SI-P 60V 4A 10W 150MHz SI-N 55V 0.1A 0.2W 80MHz SI-N 250V 60mA 0.75W SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N 75V 1A 60mW 120MHz 1000V 3A 25W 300V 1A 40W 50V 3A 25W 8MHz=H106 110V 12A 100W 4MHz 40V 3A 10W 60MHz 300V 4A 100W 10MHz 180V 10A 100W 10MHz 35V 1.5A 10W 180MHz 200V 2.5A 100W 50V 0.5A 0.6W 50MHz 40V 0.2A 0.3W <20/40 35V 0.15A 5W 1.7GHz 1500V 7A 50W 60V 0.5A 0.6W 200MHz 55V 0.1A 0.1W 230MHz

| 2SB794 | 2SB808 | 2SB815 | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | 2SB817 2SB819 2SB824 2SB826 2SB828 2SB857 2SB863 2SB873 2SB883 2SB885 2SB892 2SB897 2SB909 2SB926 2SB940 2SB945 2SB950A 2SB955 2SB976 2SB986 2SC1000 2SC1012A 2SC1017 2SC1046 2SC1050 2SC1061 2SC1080 2SC1096 2SC1114 2SC1116 2SC1162 2SC1195 2SC1214 2SC1216 2SC1238 2SC1308 2SC1318 2SC1345

2SC1359 2SC1362 2SC1382 2SC1393 2SC1413A 2SC1426 2SC1432 130MHz 2SC1445 2SC1447 2SC1449 2SC1454 2SC1501 2SC1507 2SC1515 2SC1545 2SC1570 2SC1573 2SC1583 2SC1623 2SC1627 2SC1675 2SC1685 2SC1708A 2SC1730 2SC1741 2SC1760 2SC1781 2SC1815BL 2SC1815Y 2SC1832 2SC1844 2SC1846 2SC1855 2SC1879 200MHz 2SC1895 2SC1907 2SC1914 2SC1922 2SC1929 2SC1944 2SC1946A 2SC1953 2SC1959 2SC1968 2SC1970 2SC1972 2SC1980 2SC1985 2SC2026 2SC2036 2SC2055 2SC2060 2SC2068

SI-N 30V 30mA 0.4W 250MHz SI-N 50V 0.2A 0.25W 140MHz SI-N 80V 0.75A 5W 100MHz SI-N 30V 20mA 250 mW 700MHz SI-N 1200V 5A 50W SI-N 35V 0.2A 2.7GHz N-DARL 30V 0.3A 0.3W B=40 SI-N 100V 6A 40W 10MHz SI-N 300V 0.15A 20W 80MHz SI-N 40V 2A 5W 60MHz SI-N 300V 4A 50W 10MHz SI-N 300V 0.1A 10W 55MHz SI-N 300V 0.2A 15W 80MHz SI-N 200V 0.05A 0.2W 110MHz N-DARL 40V 0.3A 0.3W B=1K SI-N 55V 0.1A 0.2W 100MHz SI-N 200V 0.1A 1W 80MHz SI-N 50V 0.1A 0.4W 100MHz SI-N 60V 0.1A 0.2W 250MHz SI-N 80V 0.4A 0.8W 100MHz SI-N 50V .03A 0.25W SI-N 60V 0.1A 150MC UNI SI-N 120V 50mA 0.2W 150MHz SI-N 30V 0.05A 1.1GHz UHF SI-N 40V 0.5A 0.3W 250MHz SI-N 100V 1A 7.9W 80MHz SI-N 50V 0.5A 0.35W SI-N 60V 0.15A 0.4W B>350 SI-N 60V 0.15A 0.4W B>120 N-DARL 500V 15A 150W B>10 SI-N 60V 0.1A 0.5W 100MHz SI-N 120V 0.05A 0.5W SI-N 20V 20mA 0.25W 550MHz N-DARL+D 120V 2A 0.8W B>1 SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N 1500V 6A 50W 2MHz 30V 0.05A 1100MHz 90V 50mA 0.2W 150MHz 1500V 2.5A 50W 300V 0.4A 25W 80MHz 80V 6A PQ=16W 35V 7A 50W 150V 0.05A 1.2W 70MHz 30V 0.5A 0.5W 200MHz 35V 5A 3W 470MHz 40V 0.6A 5W 35V 3.5A 25W 120V 20mA 0.25W 200MHz 80V 6A 40W 10MHz 30V 0.05A 0.25W 80V 1A PQ=1..4W 18V 0,3A 0,5W 40V 0.7A 0.75W 150MHz 300V 0.05A 95MHz

| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |

2SC1360 2SC1368 2SC1384 2SC1398 2SC1419 2SC1431 2SC1439 2SC1446 2SC1448 2SC1450 2SC1474-4 2SC1505 2SC1509 2SC1520 2SC1567 2SC1571 2SC1577 2SC1619 2SC1624 2SC1674 2SC1678 2SC1688 2SC1729 2SC1740 2SC1756 2SC1775A 2SC1815 2SC1815GR 2SC1827 2SC1841 2SC1845 2SC1847 2SC1871 2SC1890 2SC1906 2SC1913 2SC1921 2SC1923 2SC1941 2SC1945 2SC1947 2SC1957 2SC1967 2SC1969 2SC1971 2SC1975 2SC1984 2SC2023 2SC2027 2SC2053 2SC2058 2SC2061 2SC2073

SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N

50V 0.05A 1W >300MHz 25V 1.5A 8W 180MHz 60V 1A 1W 200MHz 70V 2A 15W 50V 2A 20W 5MHz 110V 2A 23W 80MHz 150V 50mA 0.5W 300V 0.1A 10W 55MHz 150V 1.5A 25W 3MHz 150V 0.4A 20W 20V 2A 0.75W 80MHz 300V 0.2A 15W 80V 0.5A 1W 120MHz 300V 0.2A 12,5W 100V 0.5A 5W 120MHz 40V 0.1A 0.2W 100MHz 500V 8A 80W 7MHz 100V 6A 50W 10MHz 120V 1A 15W 30MHz 30V .02A 600MC RF/IF 65V 3A 3W 50V 30mA 0.4W 550MHz 35V 3.5A 16W 500MHz 40V 100mA 0.3W 300V 0.2A >50MHz 120V 0.05A 0.2W UNI 50V 0.15A 0.4W 80MHz 60V 0.15A 0.4W B>200 100V 4A 30W 10MHz 120V 0.05A 0.5W 120V 0.05A 0.5W 50V 1.5A 1.2W 450V 15A 150W <1/3us 90V 0.05A 0.3W 19V 0.05A 0.3W 150V 1A 15W 120MHz 250V 0.05A 0.6W 30V 20mA 10mW 550MHz 160V 50mA 0.8W 80V 6A 20W 35V 1A 4W/175MHz 40V 1A 1.8W/27MHz 35V 2A 8W 470MHz 60V 6A 20W 35V 2A 12.5W 120V 2A 3.8W 50MHz 100V 3A 30W B=700 300V 2A 40W 10MHz 1500/800V 5A 50W 40V 0.3A 0.6W 500MHz 40V 0.05A 0.25W 80V 1A 0.75W 120MHz 150V 1.5A 25W 4MHz

2SC2078 2SC2092 175MHz 2SC2097 2SC2122 2SC2168 2SC2209 2SC2228 120MHz 2SC2230 2SC2235 2SC2237 2SC2240 2SC2267 2SC2271 2SC2283 2SC2295 2SC2308 2SC2312 2SC2320 2SC2331 2SC2334 2SC2336B 2SC2347 130MHz 2SC2363 2SC2369 2SC2389 500MHz 2SC2412 2SC2440 2SC2466 2SC2485 2SC2491 2SC2498 2SC2510 2SC2516 2SC2538 2SC2542 2SC2551 2SC2553 2SC2563 2SC2579 2SC2590 2SC2603 2SC2611 2SC2625 2SC2631 2SC2634 2SC2654 2SC2656 2SC2668 2SC2682 2SC2694 200MHz

SI-N 80V 3A 10W 150MHz SI-N 75V 3A 5W 27MHz SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N 50V 15A PQ=85W 800V 10A 50W 200V 2A 30W 10MHz 50V 1.5A 10W 150MHz 160V 0.05A 0.75W >50 200V 0.1A 0.8W 50MHz 120V 0.8A 0.9W 120MHz 35V 2A PQ>7.5W 175MHz 120V 50mA .3W 100MHz 400/360V 0.1A 0.4W 300V 0.1A 0.9W 50MHz 38V 0.75A 2.8W(500MHz 30V 0.03A 0.2W 250MHz 55V 0.1A 0.2W 230MHz 60V 6A 18.5W/27MHz 50V 0,2A 0,3W 150V 2A 15W POWER 150V 7A 40W POWER 250V 1.5A 25W 95MHz 15V 50mA 250mW 650MHz

| 2SC2086 | 2SC2094 | | | | | | | | | | | | | | | | | | | | 2SC2120 2SC2166 2SC2200 2SC2216 2SC2229 2SC2233 2SC2236 2SC2238 2SC2261 2SC2270 2SC2275 2SC2287 2SC2307 2SC2310 2SC2314 2SC2329 2SC2333 2SC2335 2SC2344 2SC2362

SI-N 75V 1A 0.45W/27MHz SI-N 40V 3.5A PQ>15W SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N 30V 0.8A 0.6W 120MHz 75V 4A 12.5W RFPOWER 500V 7A 40W 1US 45V 50mA 0.3W 300MHz 200V 50mA 0.8W 200V 4A 40W 8MHz 30V 1.5A 0.9W 120MHz 160V 1.5A 25W 100MHz 180V 8A 80W 15MHz 50V 5A 10W 100MHz 120V 1.5A 25W 200MHz 38V 1.5A 7.1W 175MHz 500V 12A 100W 18MHz 55V 0.1A 0.2W 230MHz 45V 1A 5W 38V 0.75A 2W 175MHz 500/400V 2A 40W 500V 7A 40W POWER 180V 1.5A 25W 120MHz 120V 50mA 0.4W

SI-N 120V 50mA 0.5W 130MHz SI-N 25V 70mA 0.25W 4.5GHz SI-N 120V 50mA 0.3W 140MHz SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N 50V 0.1A 180MHz 450V 5A 40W 30V 0.05A 2.2GHz 100V 6A 70W 15MHz 100V 6A 40W 15MHz 30V 0.05A 0.3W 3.5GHz 55V 20A 250W(28MHz) 150V 5A 30W <0.5/2us 40V 0.4A 0.7W 450V 5A 40W 300V 0.1A 0.4W 80MHz 500V 5A 40W 1us 120V 8A 80W 90MHz 160V 8A 80W 20MHz 120V 0.5A 5W 250MHz 50V 0.2A 0.3W 300V 0.1A 0.8W 80MHz 450V 10A 80W 150V 50mA 0,75W 160MHz 60V 0.1A 0.4W 200MHz 40V 7A 40W 450V 7A 80W <1.5/4.5 30V 20mA 0.1W 550MHz 180V 0.1A 8W 180MHz 35V 20A 140W

| 2SC2365 | 2SC2383 | 2SC2407 | | | | | | | | | | | | | | | | | | | | | | | | | 2SC2433 2SC2458 2SC2482 2SC2486 2SC2497 2SC2508 2SC2512 2SC2517 2SC2539 2SC2547 2SC2552 2SC2562 2SC2570A 2SC2581 2SC2592 2SC2610 2SC2621E 2SC2630 2SC2632 2SC2653 2SC2655 2SC2660 2SC2671 2SC2690 2SC2705

SI-N 600V 6A 50W POWER SI-N 160V 1A 0.9W 100MHz SI-N 35V 0.15A 0.16W SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N 120V 30A 150W 80MHz 50V 0.15A 0.2W 80MHz 300V 0.1A 0.9W 50MHz 120V 7A 80W 15MHz 70V 1.5A 5W 150MHz 40V 6A 50W 175MHz 30V 50mA 900MHz TUNE 150V 5A 30W <0.5/2us 35V 4A 17W 175MHz 120V 0.1A 0.4W 500V 2A 20W 60V 5A 25W 0.1us 25V 70mA 0.6W 200V 10A 100W 180V 1A 20W 250MHz 300V 0.1A 0.8W 80MHz 300V 0.2A 10W >50MHz 35V 14A 100W 150V 50mA 1W 160MHz 350V 0.2A 15W >50MHz 50V 2A 0.9W 0.1us 200V 2A 30W 30MHz 15V 80mA 0.6W 5.5GHz 120V 1.2A 20W 160MHz 150V 50mA 0.8W

2SC2706 80MHz 2SC2714 2SC2724 2SC2750 2SC2752 2SC2759 2SC2787 2SC2792 2SC2802 140MHz 2SC2810 100MHz 2SC2814 2SC2837 320MHz 2SC2851 2SC2878 28MHz 2SC2882 2SC2898 2SC2908 150MHz 2SC2911 150MHz 2SC2922 2SC2928 2SC2958 2SC2987 2SC2999 2SC3019 2SC3022 2SC3030 2SC3042 200MHz 2SC3063 2SC3068 2SC3073 2SC3075 2SC3101 2SC3112 2SC3117 2SC3148 2SC3153 2SC3158 2SC3169 2SC3178 2SC3180N 2SC3182N 2SC3199 100MHz 2SC3202 2SC3205 120MHz 2SC3210

SI-N 140V 10A 100W 90MHz SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N 30V 20mA 0.1W 550MHz 30V 30mA 200MHz 150V 15A 100W POWER 500V 0.5A 10W <1/3.5 30V 50mA 0.2W 2.3GHz 50V 30mA 0.3W 250MHz 850V 2A 80W 300V 0.2A 10W 80MHz

| 2SC2712 | | | | | | | | 2SC2717 2SC2749 2SC2751 2SC2753 2SC2786 2SC2791 2SC2793 2SC2808

SI-N 50V 0.15A 0.15W SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N 30V 50mA 0.3W 300MHz 500V 10A 100W 50MHz 500V 15A 120W 50MHz 17V 0.07A 0.3W 5GHz 20V 20mA 600MHz 900V 5A 100W 900V 5A 100W 100V 50mA 0.5W

SI-N 500V 7A 50W 18MHz SI-N 30V 0.03A 320MHz F SI-N 150V 10A 100W 70MHz SI-N 36V 0.3A 1W 1.5GHz SI-N 20V 0.3A 0.4W 30MHz SI-N 90V 0.4A 0.5W 100MHz SI-N 500V 8A 50W SI-N 200V 5A 50W 50MHz SI-N 180V 140mA 10W 150MHz SI-N 180V 17A 200W 50MHz SI-N 1500V 5A 50W SI-N 160V 0.5A 1W SI-N 140V 12A 120W 60MHz SI-N 20V 30mA 750MHz SI-N 35V 0.4A 0.6W 520MHz SI-N 35V 7A 50W N-DARL 900V 7A 80W SI-N 500/400V 12A 100W SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N 300V 0.1A 1.2W 140MHz 30V 0.3A Ueb=15V B>8 30V 3A 15W 100MHz 500V 0.8A 10W 1/1.5us 250V 30A 200W 25MHz 50V 0.15A 0.4W 100MHz 180V 1.5A 10W 120MHz 900V 3A 40W 1us 900V 6A 100W 500V 7A 60W 500V 2A 25W >8MHz 1200V 2A 60W 80V 6A 60W 30MHz 140V 10A 100W 30MHz 60V 0.15A 0.2W 130MHz

| 2SC2812 | 2SC2825 | 2SC2839 | 2SC2873 | 2SC2879 | 2SC288A | 2SC2901 | 2SC2910 | 2SC2912 | | | | | | | | | | | | | | | | | | | | | | | | 2SC2923 2SC2939 2SC2979 2SC2988 2SC3001 2SC3020 2SC3026 2SC3039 2SC3052F 2SC3067 2SC3071 2SC3074 2SC3089 2SC3102 2SC3116 2SC3133 2SC3150 2SC3157 2SC3164 2SC3175 2SC3179 2SC3181N 2SC3195 2SC3200

SI-N 55V 0.15A 0.2W SI-N 80V 6A 70W B>500 SI-N 20V 30mA 0.15W SI-N 50V 2A 0.5W 120MHz SI-N 45V 25A PEP=100W SI-N 35V 20mA 0.15W SI-N 40V 0.2A 0.6W <12/18 SI-N 160V 70mA 0.9W SI-N 200V 140mA 10W SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N 300V 0.1A 140MHz 500V 10A 100W 2.5us 800V 3A 40W 36V 0.5A 175MHz 20V 3A PQ=7W(175MHz) 35V 1A 10W 1700V 5A 50W POWER 500V 7A 52W 50V 0.2A 0.15W

2xSI-N 130V 50mA 0.5W 160 SI-N 120V 0.2A Ueb=15V B> SI-N 60V 5A 20W 120MHz SI-N 800V 7A 80W SI-N 35V 18A 170W 520MHz SI-N 180V 0.7A 10W 120MHz SI-N 60V 6A 1.5W 27MHz SI-N 900V 3A 50W 15MHz SI-N 150V 10A 60W SI-N 500V 10A 100W SI-N 400V 7A 50W 40MHz SI-N 60V 4A 30W 15MHz SI-N 120V 8A 80W 30MHz SI-N 30V 20mA 0.1W 550MHz SI-N 120V 0.1A 0.3W SI-N 35V 0.8A 0.6W 120MHz SI-N 150V 0.5A 0.8W SI-N 800V 5A 70W >3MHz

SI-N 35V 0.5A 0.5W 300MHz SI-N 30V 2A 1W 120MHz SI-N 500V 10A 100W 1us

| 2SC3203 | 2SC3206 | 2SC3211

2SC3212 2SC3231 2SC3242 130MHz 2SC3245A 2SC3247 2SC3258 2SC3262 2SC3264 2SC3277 2SC3280 2SC3284 2SC3297 2SC3300 2SC3306 2SC3309 2SC3311 2SC3326 2SC3328 2SC3331 120MHz 2SC3334 2SC3346 2SC3356 2SC3378 2SC3381 2SC3397 2SC3400 2SC3402 2SC3409 2SC3419 2SC3421O 2SC3422Y 2SC3425 2SC3447 2SC3457 2SC3461 2SC3467 2SC3486 2SC3503 500MHz 2SC3505 2SC3509 2SC3518 2SC3526 2SC3549 2SC3568 2SC3577 2SC3591 2SC3596 2SC3599 2SC3601 2SC3611 2SC3621 2SC3632

SI-N 800V 7A 3W 3.5MHz SI-N 200V 4A 40W 8MHz SI-N 20V 2A 0.9W 80MHz SI-N 150V 0.1A 0.9W 200MHz SI-N 50V 1A .9W 130MHz B> SI-N 100V 5A 30W 120MHz N-DARL 800V 10A 100W SI-N 230V 17A 200W 60MHz SI-N 500V 10A 90W 20MHz SI-N 160V 12A 120W 30MHz SI-N 150V 14A 125W 60MHz SI-N 30V 3A 15W 100MHz SI-N 100V 15A 100W SI-N 500V 10A 100W 1us SI-N 500V 2A 20W 1us SI-N 60V 0.1A 0.3W 150MHz SI-N 20V 0.3A 0.15W 30MHz SI-N 80V 2A 0.9W 100MHz SI-N 60V 0.2A 0.5W 200MHz SI-N 250V 50mA 0.9W 100MHz SI-N 80V 12A 40W 0.2us SI-N 20V 0.1A 0.2W 7GHz SI-N 120V 0.1A 0.2W 100MHz 2xSI-N 80V 0.1A 0.4W 170MHz SI-N 50V 0.1A 250MHz 46K/ SI-N 50V 0.1A 250MHz 22K/ SI-N 50V 0.1A 250MHz 10K/ SI-N 900V 2A 80W .8uS SI-N 40V 0.8A 5W 100MHz SI-N 120V 1A 1.5W BJT O-G SI-N 40V 3A 10W 100MHz SI-N 500V 0.8A 10W SI-N 800V 5A 50W 18MHz SI-N 1100V 3A 50W SI-N 1100/800V 8A 120W SI-N 200V 0.1A 1W 150MHz SI-N 1500V 6A 120W SI-N 300V 0.1A 7W 150MHz SI-N 900V 6A 80W N-DARL+D 900V 10A 100W 0. SI-N 60V 5A 10W SI-N 110V 0.15A 7A 30W 1us SI-N 900V 3A 40W SI-N 150V 10A 30W SI-N 850V 5A 80W 6MHz SI-N 400V 7A 50W SI-N 80V 0.3A 8W 700MHz SI-N 120V 0.3A 8W 500MHz SI-N 200V 0.15A 7W 400MHz SI-N 50V 0.15A 4W 300MHz SI-N 150V 1.5A 10W 100MHz SI-N 600V 1A 10W 30MHz

| 2SC3225 | 2SC3240 | 2SC3244E | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | 2SC3246 2SC3257 2SC3260 2SC3263 2SC3271 2SC3279 2SC3281 2SC3293 2SC3299 2SC3303 2SC3307 2SC3310 2SC3320 2SC3327 2SC3330 2SC3332 2SC3345 2SC3355 2SC3377 2SC3379 2SC3383 2SC3399 2SC3401 2SC3405 2SC3416 2SC3420 2SC3421Y 2SC3423 2SC3446 2SC3456 2SC3460 2SC3466 2SC3468 2SC3502 2SC3504 2SC3507 2SC3514 2SC3520 2SC3528 2SC3552 2SC3571 2SC3581 2SC3595 2SC3597 2SC3600 2SC3608 2SC3616 2SC3623 2SC3636

SI-N 40V 2A 0.9W 1us SI-N 50V 25A 110W 30MHz SI-N 100V 0.5A 0.9W SI-N 30V 1.5A 0.9W 130MHz SI-N 250V 10A 40W 1/3.5us N-DARL 800V 3A 50W B>10 SI-N 230V 15A 130W SI-N 300V 1A 5W 80MHz SI-N 10V 2A 0.75W 150MHz SI-N 200V 15A 150W 30MHz N-DARL+D 50V 1.2A 20W 180 SI-N 60V 5A 20W 0.1us SI-N 100V 5A 20W 0.2us SI-N 900V 10A 150W 1us SI-N 500V 5A 30W 1us SI-N 500V 15A 80W SI-N 50V 0.3A 0.2W 30MHz SI-N 60V 0.2A 0.3W 200MHz SI-N 180V 0.7A 0.7W SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N 60V 12A 40W 90MHz 20V 0.1A 0.6W 6.5GHz 40V 1A 0.6W 150MHz 20V 1.5A PQ=3W 60V 0.2A 0.5W 250MHz 50V 0.1A 250MHz 50V .1A 46K/23KOHM 900V 0.8A 20W 1us 200V 0.1A 5W 70MHz 50V 5A 10W 100MHz 120V 1A 10W 120MHz 150V 50mA 5W 200MHz 800V 7A 40W 18MHz 1100/800V 1.5A 40W 1100V 6A 100W 1200/650V 8A 120W 300V 0.1A 1W 150MHz 200V 0.1A 1.2W 70V 0.05A 0.9W 1000/800V 5A 80W 180V 0.1A 10W 200MHz 500V 18A 130W 18MHz 500V 20A 125W 1100V 12A 150W 15MHz 500V 7A 30W 55V 0.4A 0.9W 150MHz 30V 0.5A 5W 2GHz 80V 0.5A 10W 800MHz 200V 0.1A 7W 400MHz 20V 0.08A 6.5GHz 25V 0.7A 250MHz 60V 0.15A 0.25W B=1K 900/500V 7A 80W

2SC3642 2SC3656 2SC3668 2SC3675 2SC3679 6MHz 2SC3684 2SC3692 2SC3746 100/600ns 2SC3752 2SC3782 2SC3787 2SC3789 2SC3792 2SC3807 2SC380TM 2SC3831 2SC3842 2SC3851 2SC3855 2SC3858 2SC3868 2SC3884A 2SC388A 2SC3892A 2SC3895 2SC3897 2SC3907 2SC394 2SC3943 2SC3948 2SC3952 2SC3954 2SC3956 2SC3972 2SC3979A 2SC3996 2SC3999 2SC4020 2SC4029 3.2GHz 2SC4046 2SC4056 2SC4064 2SC4119 2SC4125 2SC4135 2SC4138 2SC4157 2SC4161 2SC4199 2SC4204 2SC4235 2SC4237

SI-N SI-N SI-N SI-N SI-N

1200V 6A 100W 200ns 50V 0.1A 0.4W 10K/10 50V 2A 1W 100MHz 1500/900V 0.1A 10W 900/800V 5A 100W

| | | | |

2SC3655 2SC3659 2SC3669 2SC3678 2SC3680

SI-N 50V 0.1A 0.4W 46/23K SI-N+D 1700/800V 5A 50W SI-N 80V 2A 1W 0.2us SI-N 900V 3A 80W SI-N 900/800V 7A 120W SI-N 1500V 10A 150W 0.2us SI-N 35V 0.1A 0.2W B>200 SI-N 80V 10A 30W SI-N 120V 0.4A 15W 500MHz SI-N 800V 5A 100W SI-N 200V 0.1A 5W 150MHz SI-N 300V 0.1A 7W 150MHz SI-N 900V 5A 40W N-DARL 80V 2A 170MHz B>80 SI-N 40V 0.1A 0.4W 450MHz SI-N 500/400V 12A 100W SI-N 600V 15A 75W 30MHz SI-N 80V 3A 25W 15MHz SI-N 200V 15A 150W 20MHz SI-N 900V 3A 40W SI-N+D 1500V 6A 50W SI-N 1500V 8A 50W 0.1us SI-N 500V 7A 30W 500NS SI-N+D 1500V 8A 50W SI-N 1500V 8A 70W SI-N 180V 1.5A 10W 120MHz SI-N 900V 10A 120W SI-N 30V 1A 1W 200MHz SI-N 150V 1A 40W 300MHz SI-N 30V 0.5A 5W SI-N 120V 0.2A 8W 400MHz SI-N 200V 0.1A 7W 300MHz SI-N 40V 2A 1.5W 1us SI-N 900V 7A 45W N-DARL+D 50V 3A 15W SI-N 1500V 25A 250W POWER SI-N 900/800V 1A 30W <1/4 SI-N 100V 10A 35W B>300 SI-N 20V 50mA 0.15W SI-N 600V 3A 40W 20MHz SI-N 600/450V 15A 130W SI-N 500/400V 10A 60W SI-N+D 1500V 7A 60W SI-N 100V 15A 60W 18MHz SI-N 25V 0.1A 300MHz SI-N 200V 7A 30W 0.5us SI-N 180V 1.5A 15W 100MHz N-DARL+D 50V 1.2A 1W B=4K SI-N 20V 0.6A 5W 2.5GHz SI-N 1200/800V 2A 30W SI-N 1200/800V 6A 100W SI-N 450/400V 7A 40W

SI-N+D 1500V 10A 150W SI-N 100V 7A 30W <300/180 SI-N 80V 5A 20W 100MHz SI-N 1100/800V 3A 30W SI-N 200V 0.2A 15W 400MHz SI-N 180V 0.14A 10W 150MHz SI-N 300V 0.1A 7W 70MHz SI-N 50V 0.5A 0.5W 250MHz SI-N 30V 2A 15W 260MHz SI-N 30V 50mA 0.3W 100MHz SI-N 500V 10A 100W SI-N 600V 10A 70W 32MHz SI-N 80V 4A 25W 15MHz SI-N 200V 10A 100W 20MHz SI-N 200V 17A 200W 20MHz SI-N 500V 1.5A 25W 0.7us SI-N 1500V 6A 50W SI-N 25V 50mA 0.3W 300MHz SI-N+D 1500V 7A 50W 0.4us SI-N 1500/800V 8A 70W SI-N 1500V 10A 70W SI-N 180V 12A 130W 30MHz SI-N 25V 0.1A 200MC RF SI-N 110V 0.15A 2W 300MHz SI-N 850V 10A 75W 20MHz SI-N 80V 0.5A 10W 700MHz SI-N 120V 0.3A 8W 400MHz SI-N 200V 0.2A 7W 70MHz SI-N 800/500V 5A 40W SI-N 800V 3A 2W 10MHz SI-N 1500/800V 15A 180W SI-N 300V 0.1A 0.75W 300MHz SI-N 900V 3A 50W 1us SI-N 230V 15A 150W 30MHz SI-N 120V 0.2A 8W 350MHz SI-N 600V 8A 45W SI-N 50V 12A 35W 40MHz N-DARL+D 1500V 15A 250W B SI-N+D 1500/800V 10A 70W SI-N 120V 2A 15W 200MHz SI-N 500V 10A 80W <1/3.5us SI-N 600V 10A 100W SI-N 500V 7A 30W SI-N 1400V 10A 100W SI-N 30V 0.7A 0.6W SI-N 1200/800V 3A 80W SI-N 1200/800V 10A 150W

| 2SC3688 | 2SC373 | 2SC3748 | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | 2SC3781 2SC3783 2SC3788 2SC3790 2SC3795A 2SC3808 2SC3811 2SC3833 2SC3844 2SC3852 2SC3857 2SC3866 2SC3883 2SC3886A 2SC3890 2SC3893A 2SC3896 2SC3902 2SC3927 2SC3940 2SC3944 2SC3950 2SC3953 2SC3955 2SC3964 2SC3973A 2SC3987 2SC3998 2SC4004 2SC4024 2SC4043 2SC4052 2SC4059 2SC4107 2SC4123 2SC4131 2SC4137 2SC4153 2SC4159 2SC4169 2SC4200 2SC4231 2SC4236 2SC4242

2SC4256 2SC4288A 2SC4290A 2SC4298 2SC4304 2SC4313 2SC4382 20MHz 2SC4387 2SC4408 2SC4430 2SC4439 20MHz 2SC4468 2SC4488 2SC4512 2SC4517A 2SC4532 2SC454 2SC4547 <1/5.5us 2SC4560 2SC4582 2SC461 2SC4745 2SC4758 2SC4770 2SC4804 2SC4826 2SC4883A 2SC4908 2SC4977 2SC5003 2SC5030 2SC5047 2SC5070 2SC509 2SC5148 2SC5150 2SC5198 2SC5242 2SC5296 2SC5299 2SC536 2SC643 2SC645 2SC711 2SC717 2SC732 2SC752 2SC784 200MHz 2SC828 2SC839 2SC869

SI-N 1500V 10A 175W 6MHz SI-N1600/600V 12A 200W SI-N 1500V 20A 200W SI-N 500V 15A 80W 10MHz SI-N 800V 3A 35W SI-N 900V 10A 100W 0.5us SI-N 200V 2A 25W 15MHz SI-N SI-N SI-N SI-N 200V 10A 80W 20MHz 80V 2A 0.9W 100/600ns 1100V 12A 65W 15MHz 180V 0.3A 8W 400MHz

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2SC4278 2SC4289A 2SC4297 2SC4300 2SC4308 2SC4381 2SC4386 2SC4388 2SC4429 2SC4431 2SC4467 2SC4484 2SC4511 2SC4517 2SC4531 2SC4538 2SC4542 2SC4557 2SC458 2SC460 2SC4744 2SC4747 2SC4769 2SC4793 2SC4820 2SC4834 2SC4891 2SC4924 2SC5002 2SC5027 2SC5045 2SC5048 2SC5086 2SC5144 2SC5149 2SC5171 2SC5207 2SC5244A 2SC5297 2SC535 2SC620 2SC644 2SC710 2SC712 2SC730 2SC735 2SC756 2SC815

SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N

150V 10A 100W 30MHz 1500V 16A 200W 500V 12A 75W 10MHz 900V 5A 75W 1/6us 30V 0.3A 0.6W 2.5GHz 150V 2A 25W 15MHz 160/120V 8A 75W 200V 15A 85W 20MHz 1100/800V 8A 60W 120V 1.5A 20W 150MHz 160/120V 8A 80W

SI-N 200V 10A 80W 20MHz SI-N 120V 1A 1W 120MHz SI-N 120V 6A 50W 20MHz SI-N 1000V 3A 30W 0.5us SI-N 1700V 10A 200W 2uS SI-N 30V 0.1A 230MHz N-DARL+D 85V 3A 30W B>2K SI-N 1500V 10A 80W SI-N 600V 100A 65W 20MHz SI-N 30V 0.1A 0.2W 230MHz SI-N 1500V 6A SI-N 1500V 8A 50W HI-RES SI-N 1500/800V 7A 60W SI-N 900V 3A 30W 0.3us SI-N 200V 3A 1.3W 300MHz SI-N 180V 2A 20W 120MHz SI-N 900V 3A 35W 1us SI-N 450V 7A 40W SI-N+D 1500V 7A 80W SI-N 50V 5A 1.3W 150MHz SI-N 1600V 25A 250W SI-N 30V 2A 1.5W B>800 SI-N 35V 0.5A 0.6W 60MHz SI-N 1500V 8A 50W 0.2us SI-N 1700V 10A 50W 03us SI-N 140V 10A 100W 30MHz SI-N 230V 15A 130W 30MHz SI-N+D 1500V 8A 60W SI-N 1500V 10A 70W 0.2US SI-N 40V 0.1A 180MC UNI SI-N 1100V 2.5A 50W SI-N 30V 30mA 0.14W 200MHz SI-N 30V 0.05A 150MHz SI-N 30V 50mA 0.2W 600MHz SI-N 50V 0.15A 0.4W 150MHz SI-N 15V 100mA 0.1W SI-N 40V 0.02A 500MC RF SI-N 30V 0.05A 0.25W UNI SI-N 50V 0.03A 250MHz SI-N 160V 30mA 0.2W 150MHz

SI-N 30V 2.5A 1W 250MHz SI-N 120V 6A 30W 20MHz SI-N 900V 3A 30W 6MHz SI-N+D 1500V 10A 50W SI-N 900V 5A 80W SI-N 1500V 10A 50W SI-N 900V 10A 80W SI-N 30V 0.1A 230MC UNI SI-N 30V 0.1A 0.2W 230MHz SI-N 1500V 6A POWER SI-N 1500V 10A 50W 0.3us SI-N+D 1500V 7A 60W SI-N 230V 1A 2W 100MHz SI-N 450V 6A 30W 12MHz SI-N 500V 8A 45W <0.3/1.4 SI-N 1500V 15A 75W SI-N 800V 10A 70W SI-N 1500V 7A 80W SI-N 1100V 3A 50W 0.3us SI-N 1600V 15A 75W SI-N 1500V 12A 50W 0.3us SI-N 20V 80MA 7GHZ SI-N 1700V 20A 200W SI-N+D 1500V 8A 50W 0.2us SI-N 180V 2A 20W 200MHz SI-N 1500V 10A 50W 0.4us SI-N 1600V 30A 200W SI-N 1500V 8A 60W SI-N 20V 20mA 0.1W 0.700M SI-N 50V 0.2A 0.25W UNI SI-N 30V 50mA 0.25W SI-N 30V 0.03A 200MHz SI-N 30V 0.5A 150MHz SI-N 40V 0.4A PQ=1.5W SI-N 35V 0.4A 0.3W UNI SI-N 40V 4A 10W 65MHz SI-N 60V 0.2A 0.25W SI-N 30V 30mA 0.4W 230MHz SI-N 400V 1A 23W 8MHz SI-N 150V 7A 80W 15MHz

| 2SC829 | 2SC867 | 2SC898A

2SC900 2SC936 2SC943 2SC982 2SD1012 2SD1027 2SD1036 2SD1048 2SD1051 2SD1062 2SD1065 2SD1088 2SD1128 2SD1138 2SD1145 2SD1153 2SD1164 2SD1187 2SD1192 2SD1198 2SD1210 2SD1225 2SD1244 2SD1247 2SD1255 2SD1264 2SD1266 2SD1270 2SD1272 2SD1274 2SD1286 2SD1289 2SD1293 2SD1302 250MHz 2SD1308 2SD1314 2SD1347 2SD1350A 2SD1378 2SD1380 2SD1384 2SD1392 2SD1398 2SD1403 2SD1405 2SD1407 2SD1409 2SD1413 0.8us 2SD1426 2SD1428 2SD1439 2SD1446 2SD1457

SI-N 30V 0.03A 100MHz SI-N 1000V 1A 22W POWER SI-N 60V 0.2A 0.3W 220MHz N-DARL 40V 0.3A 0.4W SI-N 20V 0.7A 0.25W 250MHz N-DARL+D 20V 15A 100W B>1 SI-N 150/120V 15A 150W SI-N 20V 0.7A 0.25W 250MHz SI-N 50V 1.5A 1W 150MHz SI-N 60V 12A 40W 10MHz SI-N 60V 15A 90W N-DARL 300V 6A 30W B>2000 N-DARL 150V 5A 30W SI-N 200V 2A 30W SI-N 60V 5A 0.9W 120MHz SI-N 80V 1.5A 0.9W SI-N 150V 1.5A 10W DAR+DI SI-N 100V 10A 80W 10MHz N-DARL+D 70V 10A 40W B=5K N-DARL 30V 1A 1W 150MHz N-DARL+D 150V 10A 80W B=5 SI-N 40V 1A 1W 150MHz SI-N+D 2500/900V 1A 50W SI-N 30V 2.5A 1W SI-N 130V 4A 35W 30MHz SI-N 200V 2A 30W POWER SI-N 60V 3A 35W POWER SI-N 130V 5A 2W 30MHz SI-N 200V 1A 40W 25MHz SI-N 150V 5A 40W 40MHz N-DARL+D 60V 1A 8W B=1K-3 SI-N 120V 8A 80W SI-N 120V 1A 1W 100MHz SI-N 25V 0.5A 0.6W 200MHz N-DARL+D 150V 8A 40W N-DARL+D 600V 15A 150W SI-N 60V 3A 1W 150MHz SI-N 600V 0.5A 1W 55MHz SI-N 80V 0.7A 10W 120MHz SI-N 40V 2A 10W 100MHz SI-N 40V 2A 0.75W 100MHz N-DARL+D 60V 5A 30W B=800 SI-N+D 1500V 5A 50W SI-N 1500V 6A 120W SI-N 50V 3A 25W 2us SI-N 100V 5A 30W 12MHz N-DARL+D 600V 6A 25W 1us N-DARL+D 60V 3A 20W .O1US SI-N+D 1500V 3.5A SI-N+D 1500V 6A 80W SI-N+D 1500V 3A 50W N-DARL+D 500V 6A 40W B>50 N-DARL+D 140V 6A 60W

| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |

2SC930 2SC941 2SC945 2SD1010 2SD1018 2SD1033 2SD1047 2SD1049 2SD1055 2SD1064 2SD1073 2SD1113K 2SD1135 2SD1140 2SD1148 2SD1163A 2SD1173 2SD1189 2SD1196 2SD1207 2SD1213 2SD1238 2SD1246 2SD1254 2SD1263A 2SD1265 2SD1267 2SD1271 2SD1273 2SD1276 2SD1288 2SD1292 2SD1297 2SD1306 2SD1313 2SD1330 2SD1348 2SD1376K 2SD1379 2SD1382 2SD1391 2SD1397 2SD1399 2SD1404 2SD1406 2SD1408 2SD1411 2SD1415 2SD1427 2SD1432 2SD1441 2SD1453 2SD1458

SI-N 15V 0.03A 300MC RF SI-N 35V 20mA 0.2W 120MHz SI-N 50V 0.1A 250MC UNI SI-N 50V 50mA 0.3W 200MHz SI-N 250V 4A 80W B>250 SI-N 200V 2A 20W 10MHz SI-N 160V 12A 100W 15MHz SI-N 120V 25A 100W SI-N 40V 2A 0.75W 100MHz SI-N 60V 12A 80W N-DARL 300V 4A 40W B>1K N-DARL+D 300V 6A 40W SI-N 80V 4A 40W N-DARL 30V 1.5A 0.9W SI-N 140V 10A 100W 20MHz SI-N 300V 7A 40W SI-N+D 1500V 5A 70W SI-N 40V 2A 5W 100MHz N-DARL+D 110V 8A 40W B=40 SI-N 60V 2A 1W SI-N 60V 20A 50W SI-N 120V 12A 80W 20MHz SI-N 30V 2A 0.75W SI-N 130V 3A 30W SI-N 400V 0.75A 35W 30MHz SI-N 60V 4A 30W 25kHz SI-N 60V 4A 40W 20MHz SI-N 130V 7A 40W 30MHz SI-N 80V 3A 40W 50MHz N-DARL 60V 4A 40W SI-N 120V 7A 70W SI-N 120V 1A 0.9W 100MHz N-DARL+D 150V 25A 100W SI-N 30V 0.7A 150mW SI-N 800V 25A 200W 6MHz SI-N 25V 0.5A 0.6W 200MHz SI-N 60V 4A 10W 150MHz N-DARL+D 120V 1.5A 40W N-DARL 40V 2A 10W 150MHz SI-N 120V 1A 10W 100MHz SI-N 1500V 5A 80W SI-N+D 1500V 3.5A 50W SI-N+D 1500V 6A 80W SI-N+D 300V 7A 25W 1us SI-N 60V 3A 25W 0.8us SI-N 80V 4A 30W 8MHz SI-N 100V 7A 30W 10MHz N-DARL+D 100V 7A 30W SI-N+D 1500V 5A 80W SI-N 1500V 6A 80W SI-N+D 1500V 4A 80W SI-N 1500V 3A 50W SI-N 20V 0.7A 1W

2SD1468 2SD1496 2SD1504 2SD1508 2SD1511 2SD1525 2SD1541 2SD1554 2SD1556 2SD1565 2SD1577 2SD1589 2SD1595 2SD1610 2SD1632 2SD1649 2SD1651 2SD1656 2SD1664 2SD1667 2SD1669 2SD1680 2SD1683 2SD1706 2SD1710 2SD1729 2SD1739 2SD1758 2SD1761 2SD1763A 2SD1765 2SD1776 2SD1785 2SD1791 2SD1802 2SD1809 2SD1815 2SD1825 20MHz 2SD1830 2SD1843 2SD1849 2SD1856 2SD1858 2SD1862 2SD1864 2SD1878 2SD1881 2SD1894 2SD1913 2SD1930 2SD1944 2SD1959 2SD198 2SD1992

SI-N 30V 1A 0.3..0.4W 150 SI-N 1500V 5A 50W SI-N 30V 0.5A 0.3W 300MHz N-DARL 30V 1.5A 10W B>400 N-DARL 100V 1A 1W 150MHz N-DARL+D 100V 30A 150W SI-N 1500V 3A 50W SI-N+D 1500V 3.5A 40W 1us SI-N+D 1500V 6A 50W 1us N-DARL+D 100V 5A 30W SI-N 1500V 5A 80W N-DARL+D 100V 5A 20W N-DARL+D 60V 5A 20W B=6K SI-N 200V 0.1A 1.3W 140MHz N-DARL+D 1500V 4A 80W SI-N+D 1500/800V 2,5A 50W SI-N+D 1500/800V 5A 60W SI-N 1500V 6A 50W 3MHz SI-N 40V 1A 0.5W 150MHz SI-N 60V 5A 25W 30MHz SI-N 60V 12A 30W SI-N 330/200V 7A 70W SI-N 60V 4A 10W 150MHz SI-N 130/80V 15A 80W 20MHz SI-N 1500/800V 5A 100W SI-N+D 1500/700V 3.5A 60W SI-N 1500/700V 6A 100W SI-N 40V 2A 10W 100MHz SI-N 80V 3A 35W SI-N 120V 1.5A 20W 80MHz N-DARL+D 100V 2A 20W B>1K SI-N 80V 2A 25W 40MHz N-DARL+D 120V 6A 30W 100MHz N-DARL 100V 7A 30W 50MHz SI-N 60V 3A 15W 150MHz N-DARL 60V 1A 0.9W B>2K SI-N 120V 3A 20W 180MHz N-DARL+D 70V 4A 20W N-DARL+D 110V 8A 30W B=4K N-DARL+D 60V 1A 1W B>2000 SI-N+D 1500/700V 7A 120W N-DARL+D 60V 5A 25W SI-N 40V 1A 1W 150MHz SI-N 40V 2A 1W 100MHz SI-N 60V 3A 1W 90MHz SI-N+D 1500V 5A 60W 0.3us SI-N+D 1500V 10A 70W SI-N 160V 7A 70W 20MHz SI-N 60V 3A 20W 100MHz N-DARL 100V 2A 1.2W B=500 SI-N 80V 3A 30W 50MHz SI-N 1400V 10A 50W SI-N 300V 1A 25W 45MHz SI-N 30V 0.5A 0.6W 200MHz

| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |

2SD1491 2SD1497-02 2SD1506 2SD1509 2SD1521 2SD1526 2SD155 2SD1555 2SD1563A 2SD1576 2SD1579 2SD1590 2SD1609 2SD1624 2SD1647 2SD1650 2SD1652 2SD1663 2SD1666 2SD1668R 2SD1677 2SD1681 2SD1684 2SD1707 2SD1725 2SD1730 2SD1740 2SD1760 2SD1762 2SD1764 2SD1769 2SD1783 2SD1790 2SD1796 2SD1806 2SD1812 2SD1817 2SD1827 2SD1835 2SD1847 2SD1853 2SD1857 2SD1859 2SD1863 2SD1877 2SD1880 2SD1887 2SD1895 2SD1929 2SD1933 2SD1958 2SD1978 2SD1991 2SD1994

N-DARL+D 70V 2A 10W B>2K SI-N 1500V 6A 50W SI-N 60V 3A 10W 90MHz N-DARL+D 80V 2A 10W 0.4uS N-DARL+D 50V 1.5A 2W B>2K SI-N 130V 1A 1W 200MHz SI-N 80V 3A 25W SI-N+D 1500V 5A 40W 1us SI-N 160V 1.5A 10W 80MHz SI-N 1500V 2.5A 48W N-DARL+D 150V 1.5A 1W N-DARL+D 150V 8A 25W SI-N 160V 0.1A NF/S-L SI-N 60V 3A .5W 150MHz N-DARL+D 50V 2A 25W SI-N+D 1500/800V 3.5A 50W SI-N+D 1500V 6A 60W 3MHz SI-N 1500V 5A 80W 0.5us SI-N 60V 3A 20W SI-N 60V 7A 30W SI-N 1500V 5A 100W 0.5us SI-N 20V 1.2A 10W 150MHz SI-N 120V 1.2A 10W 150MHz SI-N 130/80V 20A 100W SI-N 120V 4A 20W 180MHz SI-N+D 1500/700V 5A 100W N-DARL 150V 5A 25W B=5000 SI-N 60V 3A 15W 90MHz SI-N 60V 3A 25W 70MHz N-DARL+D 60V 2A 20W B>100 N-DARL+D 120V 6A 50W N-DARL+D 60V 5A 30W B=2K N-DARL+D 200V 4A 25W B=1K N-DARL+D 60V 4A 25W SI-N+D 40V 2A 15W 150MHz SI-N 160V 1.5A 0.9W SI-D 80V 3A 15W B>2K N-DARL+D 70V 10A 30W SI-N 60V 2A 150MHz 60/580 SI-N+D 1500/700V 5A 100W N-DARL+D 80V 1.5A 0.7W B> SI-N 120V 1.5A 1W 80MHz SI-N 80V 0.7A 1W 120MHz SI-N 120V 1A 1W 100MHz SI-N+D 1500/800V 4A 50W SI-N+D 1500V 8A 70W SI-N 1500/800V 10A 70W N-DARL 160V 8A 100W 20MHz N-DARL+D 60V 2A 1.2W N-DARL+D 80V 4A 30W SI-N 200V 4.5A 30W 10MHz N-DARL+D 120V 1.5A 0.9W SI-N 60V 0.1A 0.4W 150MHz SI-N 60V 1A 1W 200MHz

2SD1996 2SD2006 2SD2010 2SD2018 2SD2061 2SD2088 2SD213 2SD2137A 2SD2144 20MHz 2SD2159 2SD2253 2SD2276 2SD234 2SD2375 2SD2389 55MHz 2SD2394 2SD2399 2SD2493 2SD2499 2SD313 2SD350 2SD359 2SD381 2SD386 2SD401 2SD415 2SD438 2SD468 2SD476 2SD545 2SD552 2SD555 2SD560 2SD592 2SD600K 2SD612 2SD617 2SD661 2SD666 2SD669A 2SD712 2SD718 2SD726 2SD732 2SD762 2SD768 2SD774 2SD786 2SD788 80MHz 2SD794 2SD798 2SD800

SI-N 25V 0.5A 0.6W 200MHz SI-N 80V 0.7A 1.2W 120MHz N-DARL 60V 2A 1.2W B>1000 N-DARL+D 60V 1A 5W B>6K5 SI-N 80V 3A 30W 8MHz N-DARL+D 60V 2A 0.9W B>2K SI-N 110V 10A 100W SI-N 80V 3A 15W 30MHz SI-N 25V 0.5A B>560 SI-N 30V 2A 1W 110MHz SI-N+D 1700V 6A 50W N-DARL 160V 8A 120W B>5K SI-N 60V 3A 25W AF-POWER SI-N 80V 3A 25W B>500 N-DARL 160V 10A 100W B>5K SI-N 60V 3A 30W N-DARL+D 80V 4A 30W B=1KN-DARL 110V 6A 60W 60MHz SI-N+D 1500V 6A 50W SI-N 60V 3A 30W 8MHz SI-N 1500V 5A 22W SI-N 40V 2A 10W LOWFREQPO SI-N 130V 1.5A 20W 60MHz SI-N 200V 3A 25W 8MHz SI-N 200V 2A 20W 10MHz SI-N 120/100V 0.8A 10W SI-N 100V 0.7A 0.9W 100MHz SI-N 25V 1A 0,9W 280MHz SI-N 70V 4A 40W 7MHz SI-N 25V 1.5A 0.5W SI-N 220V 15A 150W 4MHz SI-N 400V 15A 200W 7MHz N-DARL 100V 5A 30W SI-N 30V 1A 0.75W 200MHz SI-N 120V 1A 8W SI-N 25V 2A 10W 100MHz N-DARL 120V 8A 100W SI-N 35V 0.1A 0.4W 200MHz SI-N 120V 0.05A 140MHz SI-N 160V 1.5A 1W 140MHz SI-N 100V 4A 30W 8MHz SI-N 120V 8A 80W 12MHz SI-N 100V 4A 40W 10MHz SI-N 150V 8A 80W 15MHz SI-N 60V 3A 25W 25kHz N-DARL+D 120V 6A 40W B>1K SI-N 100V 1A 1W 95MHz SI-N 40V 0.3A 0.25W SI-N 20/20V 2A 0.9W 100MHz SI-N 70V 3A 10W 60MHz N-DARL 600V 6A 30W B>1K5 SI-N 750V 4A 30W 8MHz

| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |

2SD200 2SD2007 2SD2012 2SD2052 2SD2066 2SD2125 2SD2136 2SD2141 2SD2151 2SD2250 2SD2255 2SD2331 2SD2340 2SD2386 2SD2390 2SD2395 2SD2438 2SD2498 2SD287 2SD325 2SD350A 2SD361 2SD382 2SD400 2SD414 2SD424 2SD467 2SD471 2SD478 2SD549 2SD553 2SD556 2SD571 2SD596 2SD602A 2SD613 2SD637 2SD662 2SD667 2SD676 2SD717 2SD725 2SD731 2SD734 2SD763 2SD773 2SD781 2SD787 2SD789

SI-N 1500V 2.5A 10W SI-N 40V 2A 1.2W 100MHz SI-N 60V 3A 25W 3MHz SI-N 150V 9A 100W 20MHz SI-N 160V 12A 120W SI-N+D 1500V 5A 50W 0.2us SI-N 60V 3A 1.5W 30MHz N-DARL+D 380V 6A 35W B>15 SI-N 130/80V 10A 30W N-DARL 160V 7A 90W B>5K N-DARL 160V 7A 70W 20MHz N-DARL+D 1500V 3A SI-N 130V 6A 50W N-DARL 140V 7A 70W B>5K N-DARL 160V 10A 100W SI-N 50V 3A 25W N-DARL+D 160V 8A 70W B>5K SI-N 1500V 6A 50W SI-N 200V 10A 100W 8MHz SI-N 35V 1.5A 10W 8MHz SI-N 1500V 5A 22W SI-N 60V 1.5A 10W 70MHz SI-N 130V 1.5A 20W 60MHz SI-N 25V 1A 0.9W SI-N 120/80V 0.8A 10W SI-N 160V 15A 150W POWER SI-N 25V 0.7A 0.5W 280MHz SI-N 30V 1A 0.8W UNI (EBC SI-N 200V 2A 30W N-DARL 30V 1.5A 15W B>4K SI-N 70V 7A 40W 10MHz SI-N 120V 15A 120W 8MHz SI-N 60V 700mA 1W 110MHz SI-N 30V 0.7A 170MHz SI-N 60V 0.5A 0.2W 200MHz SI-N 100V 6A 40W 15MHz SI-N 60V 0.1A 0.4W 150MHz SI-N 250V 0.1A 0.6W 50MHz SI-N 120V 1A 140MHz SI-N 160V 12A 125W 8MHz SI-N 70V 10A 80W 0.3us SI-N 1500V 6A 50W POWER SI-N 170V 7A 80W 7MHz SI-N 25V 0.7A 0.6W 250MHz SI-N 120V 1A 0.9W SI-N 20V 2A 1W 110MHz SI-N 150V 2A 1W 0.6us SI-N 20V 2A 0.9W 80MHz SI-N 100/50V 1A 0.9W SI-N 40V 3A 20W 95MHz N-DARL+D 400V 6A 30W SI-N 100V 1A 10W 85MHz

| 2SD795 | 2SD799 | 2SD809

2SD819 2SD822 2SD829 2SD844 2SD856 2SD864K 2SD871 2SD880 2SD889 2SD894 2SD917 2SD921 2SD947 2SD958 2SD966 2SD970 2SD982 2SD998 2SJ109 2SJ117 2SJ174 2SJ177 2SJ200 2SJ306 2SJ353 2SJ72 2SJ77 2SK1010 2SK1057 2SK107 2SK1081 2SK1101 2SK1113 2SK1118 2SK1120 2SK1170 2SK1181 2SK1191 2SK1213 2SK1221 2SK1257 2SK1275 2SK1299 2SK1338 2SK1342 2SK1350 2SK1356 2SK1358 2SK1377 2SK1379 2SK1400 2SK1419 2SK1444 2SK1460 2SK1462

SI-N 1500V 3.5A 50W SI-N 1500/600V 7A 50W N-DARL+D 150V 15A 100W B= SI-N 50V 7A 60W 15MHz SI-N 60V 3A 35W POWER N-DARL+D 120V 3A 30W SI-N+D 1500V 5A 50W SI-N 60V 3A 30W 0.8us SI-N+D 1500V 4A 50W N-DARL 30V 1.5A 10W 120MHz SI-N 330V 7A 70W POWER N-DARL 200V 5A 80W B>700 N-DARL 40V 2A 5W 150MHz SI-N 120V 0.02A 0.4W 200MHz SI-N 40V 5A 1W 150MHz N-DARL+D 120V 8A 40W B>1K N-DARL 200V 5A 40W B=3000 N-DARL 100V 1.5A 10W B=7K P-FET DUAL 30V Id>2.6mA P-FET 400V 2A 40W 35ns P-FET 60V 20A 75W 235ns P-FET 60V 20A 75W <0E085 P-FET 180V 10A 120W P-FET 250V 3A 25W <2E =3 P-FET 60V 1.5A 1W <E37 P-FET 25V 30MA 0.6W Up<2V P-FET 160V 0.5A 30W N-FET 500V 6A 80W <1E5 N-FET 140V 7A 100W N-FET 9V 20MA 250MW N-FET 800V 7A 125W 380ns N-FET 450V 10A 50W E65 =1 N-FET 120V 3A 20W N-FET 600V 6A 45W 1.25R N-FET 1000V 8A 150W 1E8 N-FET 500V 20A 120W <E27 N-FET 500V 13A 85W 0.4E N-FET 60V 30A 40W 0.03E N-FET 600V 6A 125W 40/85ns N-FET 250V 10A 80W 0E4 N-FET 60V 40A 45W 0.05E N-FET 900V 2A 30W 7E N-FET 100V 3A 20W 0E45 N-FET 900V 2A 50W 7E N-FET 900V 8A 100W 1E6 N-FET 200V 15A 45W 0E14 N-FET 900V 3A 40W N-FET 900V 9A 150W 1.4E N-FET 500V 5.5A 40W N-FET 60V 50A 150W <E017 N-FET 300V 7A 50W N-FET 60V 15A 25W <E08 N-FET 450V 3A 25W 2.6E N-FET 900V 3.5A 40W 2E8 N-FET 900V 8A 150W

| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |

2SD820 2SD826 2SD837 2SD850 2SD863 2SD867 2SD879 2SD882 2SD892A 2SD895 2SD92 2SD946 2SD951 2SD965 2SD968A 2SD972 2SD986 2SJ103 2SJ113 2SJ162 2SJ175 2SJ182 2SJ201 2SJ307 2SJ449 2SJ74 2SJ79 2SK1036 2SK1058 2SK108 2SK1082 2SK1102 2SK1117 2SK1119 2SK117 2SK118 2SK1190 2SK1198 2SK1217 2SK125 2SK1271 2SK1296 2SK1317 2SK1341 2SK1345 2SK1351 2SK1357 2SK1363 2SK1378 2SK1388 2SK1404 2SK1420 2SK1447 2SK1461 2SK1502

SI-N 1500V 5A 50W SI-N 60V 5A 10W 120MHz N-DARL 60V 4A 40W SI-N 1500V 3A 25W SI-N 50V 1A 0.9W SI-N 130V 10A 100W 3MHz SI-N 30V 3A 0.75W 200MHz SI-N 30V 3A 10W N-DARL 60V 0.5A 0.4W B>2K SI-N 100V 6A 60W 10MHz SI-N 100V 3A 20W N-DARL 30V 1A SI-N 1500V 3A 65W SI-N 40V 5A 0.75W 150MHz SI-N 120V 0.5A 1W 120MHz N-DARL 50V 4A 30W B=3K N-DARL 150/80V 1.5A 10W P-FET 50V 2.6mA Up<2V P-FET 100V 10A 100W OE35 P-FET 160V 7A 100W 1E P-FET 60V 10A 25W OE25 P-FET 60V 3A 20W OE28 P-FET 200V 12A 150W P-FET 250V 6A 2W <1E P-FET 250V 6A 35W <E8 P-FET 25V 1mA Up<2V P-FET 200V 0.5A 30W N-FET 250V 1A 2W 80ns N-FET 160V 7A 100W 1E N-FET 50V 20mA 0.3W 70E N-FET 900V 6A 125W 2.8E N-FET 500V 10A 50W 240ns N-FET 600V 6A 100W 1.25R N-FET 100V 4A 100W N-FET 50V 5mA N-FET 50V 0.3mA 0.1W N-FET 60V 22A 35W 0E05 N-FET 700V 2A 35W 3.2E N-FET 900V 8A 100W N-FET 25V 0.1A 0.3W N-FET 1400V 5A 240W <4E N-FET 60V 30A 0.024E N-FET 1500V 2.5A 100W 12E N-FET 900V 6A 100W 3E N-FET 60V 20A 40W <E055 N-FET 500V 5A 40W <1E5 N-FET 900V 5A 125W N-FET 900V 8A 90W 1.4E N-FET 400V 10A 125W 0.55E N-FET 30V 35A 60W <E022 N-FET 600V 5A 35W 1E5 N-FET 60V 25A 30W 0.045E N-FET 450V 9A 40W <E6 N-FET 900V 5A 120W N-FET 900V 7A 120W 2E

2SK1507 2SK1529 2SK1531 2SK1544 2SK1612 2SK1637 2SK1653 2SK170 2SK1833 2SK1917M 2SK1924 2SK1940 2SK1943 2SK2038 2SK2043 2SK2078 2SK212 2SK2136 2SK2141 2SK2161 2SK2333 2SK240 2SK246 2SK2545 2SK2605 2SK301 2SK304 2SK315 2SK33 2SK332 2SK359 2SK364 2SK369 2SK374 2SK386 2SK40 2SK404 2SK423 2SK430 2SK511 50/120ns 2SK526 2SK538 2SK55 2SK555 2SK559 2SK606 2SK612 2SK685 2SK703 2SK725 2SK73 2SK754 2SK769 2SK787

N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET

600V 9A 50W 240ns 180V 10A 120W 500V 15A 150W E45 500V 25A 200W 0.2E 900V 3A 50W 40/140ns 600V 4A 35W <2E4 60V 45A 45W <E02 40V 20mA 0.4W 500V 2.5A 40W <4E 250V 10A 50W <E4 600V 6A 1.75W 600V 12A 125W <E75 900V 5A 80W <2E8 800V 5A 125W 2E2 600V 2A 2W 4E3 800V 9A 150W <1E2 20V 0.6mA 0.2W 200V 20A 75W <E18 600V 6A 35W 1.1E 200V 9A 25W 0.35E 700V 6A 50W <2E 40V 2.6mA Up<1.5V 50V 1,2mA Up<6V 600V 6A 40W 1.25E 800V 5A 45W 2.2E 55V 20mA 0.25W 30V 0.6mA Up<4V 20V 2.5mA 0.2W 20V 20mA 0.15W 40V 12mA Up=0.5V 20V 30mA 0.4W 40V 2.6mA Up<1.5V 40V 5mA Up<1.2V 55V 1mA Up<5V 450V 10A 120W 50V 6.5mA 20V 1.2mA 0.2W 100V 0.5A 0.9W 25ns 150V 3A 20W 0E8 250V 0.3A 8W 250V 10A 40W 0.6R 900V 3A 100W 4.5R 18V 14mA VHF 500V 7A 60W <E85 450V 15A 100W 0E36 30V 20mA Up<3V 100V 2A 20W 1000V 5A 100W 2E 100V 5A 35W 0E5 500V 15A 125W 0E38 200V 0.1A 5W 160V 10A 50W 0E22 500V 10A 100W 1E 900V 8A 120W

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2SK152 2SK1530 2SK1537 2SK161 2SK163 2SK1643 2SK168 2SK1723 2SK184 2SK192 2SK193 2SK1941 2SK1953 2SK2039 2SK2056 2SK2083 2SK2134 2SK214 2SK216 2SK223 2SK2352 2SK241 2SK2485 2SK2561 2SK2632LS 2SK303 2SK30ATM 2SK320 2SK330 2SK357 2SK363 2SK367 2SK373 2SK381 2SK389 2SK400 2SK415 2SK427 2SK439 2SK513 2SK537 2SK544 2SK553 2SK557 2SK583 2SK611 2SK68 2SK701 2SK719 2SK727 2SK735 2SK758 2SK786 2SK790

N-FET 15V 9.5mA Up<2V N-FET 200V 12A 150W N-FET 900V 5A 100W 290ns N-FET 18V 0.01A 0.2W N-FET 50V 0.03A 0.4W N-FET 900V 5A 125W 2.8E N-FET 30V 20mA 0.2W FM-V/ N-FET 600V 12A 150W <E65 N-FET 50V 0.6mA Up<1.5V N-FET 18V Idss>3mA Up<3V N-FET-DG 15V VHF N-FET 600V 16A 100W <E55 N-FET 600V 2A 25W 5E N-FET 900V 5A 150W <2E5 N-FET 800V 4A 40W 2.4E N-FET 900V 5A 70W 3E6 N-FET 200V 13A 70W <E4 N-FET 160V 0.5A 30W N-FET 200V 0.5A 30W N-FET 80V 1.2mA 0.4W N-FET 600V 6A 45W <1E25 N-FET 20V FM/VHF N-FET 900V 6A 100W 2.8E N-FET 600V 9A 80W 1.2E N-FET 800V 2.5A 30W <4E8 N-FET 30V 0.6mA Up<4V N-FET 50V 6.5mA N-FET 450V 5A 50W <1E83 N-FET 50V 14MA 0.2W 320R N-FET 150V 5A 40W <E9 N-FET 40V 5mA Up<1.2V N-FET 100V 0.6mA N-FET 100V 0.6mA N-FET 50V 0.3mA 0.3W 2xN-FET 50V N-FET 200V 8A 100W 0E7 N-FET 800V 3A 100W <6E N-FET 15V 2.5mA Up<1.5V N-FET 20V 30mA 0.3W N-FET 800V 3A 60W N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET N-FET 900V 1A 60W 20V 30mA 0.3W 500V 5A 50W 1E5 500V 12A 100W 0E6 50V 0.2A 0.6W 20E 100V 1A 10W 6E 50V 0.5mA Up<1.5V 60V 2A 15W <E6 900V 5A 120W 900V 5A 125W 2E5 450V 10A 100W <0E8 250V 5A 40W OE7 20V 3A 50W 7E5 500V 15A 150W

2SK791 2SK793 2SK796 2SK817 2SK851 2SK872 2SK890 2SK899 2SK903 2SK940 2SK951 2SK955 2SK962 3SK60 3SK74 AC122 AC126 AC128 AC128K AC132 1.5MHz AC141K AC153 AC176K AC187 AC187K AC188K AD136 AD148 AD161 AD162 AD166 AF109R 125MHz AF121 AF127 AF200 AF239S AF279S AF306 AF379 AL112 ASY77 ASZ18 BC107C BC109C >60MHz BC119 BC136 BC141-10 BC142 BC146 BC177A BC177C BC285

N-FET 850V 3A 100W 4.5R N-FET 850V 5A 150W 2.5R N-FET 800V 3A 90W 5E N-FET 60V 26A 35W 0.08E N-FET 200V 30A 150W N-FET 900V 6A 150W 2.5E N-FET 200V 10A 75W <E4 N-FET 500V 18A 125W <E33 N-FET 800V 3A 40W 4E N-FET 60V 0.8A 0.9W 1.1E N-FET 800V 2.5A 40W 7E N-FET 800V 5A 125W 2E N-FET 900V 0.5mA Up>2.5V N-FET-DG 15V 33mA N-FET-DG 20V 25mA 0.2W GE-P 30V 0.2A 0.225W GE-P 32V 0.2A 0.5W GE-P 32V 1A 1W GE-P 32V 1A 1W GE-P 32V 0.2A 0.5W GE-N GE-P GE-N GE-N GE-N GE-P GE-P GE-P GE-N GE-P GE-P GE-P GE-P GE-P GE-P GE-P GE-P GE-P GE-P GE-P GE-P GE-P SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-P SI-P SI-N 32V 32V 32V 25V 25V 25V 40V 32V 32V 32V 60V 20V 1.2A 1W 2A 1W 1A 1W 1A 1W 1A 1W COOLED 1A 1W 10A 11W 3.5A 13.5W 1A 6W 1A 6W 5A 27.5W 12mA 260MHz VHF

| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |

2SK792 2SK794 2SK806 2SK83 2SK856 2SK875 2SK891 2SK902 2SK904 2SK943 2SK952 2SK956 3SK131 3SK73 AC121 AC125 AC127 AC128/176K AC131 AC138 AC151 AC153K AC180 AC187/188K AC188 AD133 AD139 AD149 AD161/162 AD165 AF106 AF118 AF125 AF139 AF201 AF279 AF280 AF367 AL102 ASY27 ASZ15 BC107B BC109B BC117 BC135 BC139 BC141-16 BC143 BC161-16 BC177B BC190 BC300

N-FET 900V 3A 100W 4.5R N-FET 900V 5A 150W 2.5R N-FET 600V 3A 50W <2E7 N-FET 25V 10MA 0.1W Up<2. N-FET 60V 45A 125W <E03 N-FET 450V 12A 120W 0.6E N-FET 100V 18A 125W <E18 N-FET 250V 30A 150W N-FET 800V 3A 80W 4E N-FET 60V 25A 40W E046 N-FET 800V 0.5mA N-FET 800V 9A 150W 1E5 N-FET-DG 20V 25mA 0.2W N-FET-DG 20V 3mA GE-P 20V 0.3A 0.9W GE-P 32V 0.2A GE-N 32V 0.5A GE N/P PAIRED, COOLED GE-P 30V 1A 0.75W GE-P 32V 1.2A 0.22W GE-P 32V 0.2A 0.9W GE-P 32V 2A 1W GE-P 32V 1.5A 0.3W 1MHz GE N/P PAIRED,COOLED GE-P 25V 1A 1W GE-P 50V 15A 36W GE-P 32V 3.5A 13W GE-P 50V 3.5A 27W GE N/P 32V 1A 6W PAIRED GE-N 25V 1A 6W GE-P 25V 10mA 220MHz VHF GE-P 70V 30mA 375mW GE-P GE-P GE-P GE-P GE-P GE-P GE-P GE-P GE-P SI-N SI-N SI-N SI-N SI-P SI-N SI-P SI-P SI-P SI-N SI-N 32V 10mA 75MHz 20V 10mA 550MHz 25V 10mA 0.145W 15V 10mA 60mW 780MHz UHF MIXER 550MHz 153V 10mA UHF 800MHz 130V 6A 30W 25V 0.2A 0.15W 100V 8A 30W 50V 0.2A 0.3W 250MHz 30V 0.2A 0.3W 300MHz 120V 50mA 0.3W 45V 0.2W >200MHz 40V 0.5A 0.7W 100V 1A 0.75W 50MHz 60V 1A 0.7W AF/DRIVE 60V 1A 0.75W 50MHz 50V 0.1A 0.3W 130MHz 70V 0.1A 0.3W 250MHz 120V 0.5A 6W 120MHz

25V 10mA 270MHz 32V 10mA 75MHz 25V 10mA 0.145W 15V 10mA 700MHz 20V 10mA 0.6W 25V 15mA 60mW 500MHz UHF 1250MHz 130V 6A 10W 60V 1A 0.26W 500KHz 100V 8A 30W 50V 0.2A 0.3W 250MHz 30V 0.2A 0.3W 150MHz 60V 1A 0.8W 10MHz 60V 0.5A 0.3W >60MHz 100V 1A 0.75W 50MHz 80V 1A 0.8W 20V 50mA 50mW 150MHz 50V 0.1A 0.3W 130MHz 50V 0.1A 0.3W 130MHz 120V 0.1A 0.36W 80MHz

BC303 BC323 100MHz BC327-25 100MHz BC336 150MHz BC337-25 150MHz BC368 BC376 BC441 BC449 BC451 BC485 BC488 BC490 BC517 BC546A BC546C BC547B BC550B BC556A BC557A BC557C BC560C BC639 BC807-25 BC817-16 BC817-40 BC846B BC847B BC847C BC850C BC856B BC857B BC857C BC860B BC868 BC879 BCP68 BCX17 BCX19 BCX53 BCY59 BCY72 BCY85 BD115 BD131 BD139 BD140 BD141 BD159 BD179 BD183

SI-P 85V 1A 6W 75MHz SI-N 100V 5A 0.8W 100MHz SI-P 50V 0.8A 625mW 100MHz SI-P 25V 50mA 0.31W 50MHz SI-N 50V 0.8A 625mW 150MHz SI-N 20V 1A 0.8W 100MHz SI-P 25V 1A 0.625W 150MHz SI-N 75V 2A 1W SI-N 100V 0.3A 0.625W SI-N 50V 0.1A 0.3W >150MHz SI-N 45V 1A 0.625W 200MHz SI-P 60V 0.1A 625mW >135MHz SI-P 80V 1A 0.625W 200MHz N-DARL 40V 0.4A 0.625W SI-N 80V 0.2A 0.5W SI-N 80V 0.1A 0.5W SI-N 50V 0.2A 0.5W 300MHz SI-N 50V 0.2A 0.5W SI-P 60V 0.2A 0.5W SI-P 50V 0.2A 0.5W SI-P 50V 0.2A 0.5W SI-P 50V 0.2A 0.5W SI-N 80V 1A 0.8W 100MHz SI-P 50V 0.5A 0.25W 5B SI-N 50V 0.5A 0.25W 6A SI-N 50V 0.5A 0.25W 6C SI-N 80V 0.1A 0.25W 1B SI-N 50V 0.1A 0.25W 1F SI-N 50V 0,1A 0.25W 1G SI-N 45V 0.1A 0.25W 2G SI-P 65V 0.1A 150MHz 3B SI-P 45V 0.1A 0.2W 3F SI-P 45V 0.1A 0.25W 3G SI-P 50V 0.1A 4F SI-N 25V 1A 60MHz N-DARL 100V 1A 0.8W SI-N 20V 1A 1.5W 60MHz SI-P 50V 0.5A 100MHz T1 SI-N 50V 0.5A 300mW 200MHz SI-P 100V 1A 50MHz SI-N 45V 0.2A 1W 250MHz SI-P 30V 0.2A 0.35W SI-N 100V 0.2A 0.3W SI-N 245V 0.15A 0.8W SI-N 70V 3A 15W >60MHz SI-N 80V 1.5A 12.5W 50MHz SI-P 80V 1.5A 12.5W 50MHz SI-N 140V 8A 117W SI-N 375V 0.5A 20W SI-N 80V 3A 30W SI-N 85V 15A 117W

| BC313 | BC327-16 | BC327-40 | BC337-16 | BC337-40 | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | BC369 BC393 BC448 BC450 BC461 BC487B BC489 BC516 BC538 BC546B BC547A BC547C BC550C BC556B BC557B BC560B BC618 BC640 BC807-40 BC817-25 BC828 BC847A BC847BR BC849C BC856A BC857A BC857BR BC859B BC860C BC869 BC880 BCV27 BCX17R BCX38B BCX56 BCY71 BCY79 BD109 BD129 BD132 BD139-16 BD140-16 BD142 BD160 BD180 BD201

SI-P 60V 1A 4W 50MHz SI-P 50V 0.8A 625mW SI-P 50V 0.8A 625mW SI-N 50V 0.8A 625mW SI-N 50V 0.8A 0.625W SI-P 20V 1A 0.8W SI-P 180V 10mA 40mW SI-P 80V 0.3A 0.625W >100 SI-P 100V 0.3A 0.625W SI-P 75V 2A 1W SI-N 60V 1A 0.625W 200MHz SI-N 80V 1A 0.625W 200MHz P-DARL 40V 0.4A 0.625W SI-N 80V 1A 0.625W 100MHz SI-N 80V 0.2A 0.5W SI-N 50V 0.2A 0.5W SI-N 50V 0.2A 0.5W 300MHz SI-N 50V 0.2A 0.5W SI-P 80V 0.2A 0.5W SI-P 50V 0.2A 0.5W SI-P 50V 0.2A 0.5W N-DARL 80V 1A 0.625W B>10 SI-P 80V 1A 0.8W 130MHz SI-P 45V 0.5A 0.3W 100MHz SI-N 50V 0.5A 0.25W 6B SI-P 50V 0.8A 0.8W 100MHz SI-N 50V 0.1A 0.2W SI-N 50V 0.1A 0.25W SMD SI-N 30V 0.1A 0.25W 2C SI-P 65V 0.1A 150MHz 3A SI-P 50V 0.1A 150MHz SI-P 45V 0.1A 0.2W SI-P 30V 0.1A 0.25W 4B SI-P 50V 0.1A 4G SI-P 25V 1A 1W 60MHz P-DARL 100V 1A 0.8W N-DARL 40V 0.5A 0.25W B>1 SI-P 50V 0.5A 100MHz T4 N-DARL 80V 0.8A 1W B>4000 SI-N 100V 1A 130MHz SI-P 45V 0.2A 0.35W SI-P 45V 0.2A 1W 180MHz SI-N 60V 3A 15W SI-N 400V 0.5A 17.5W SI-P 45V 3A 15W >60MHz SI-N 80V 1.5A 12.5W 50MHz SI-P 80V 1.5A 12.5W 50MHz SI-N 50V 15A 117W SI-N 250V 5A 25W SI-P 80V 3A 30W >2MHz SI-N 60V 8A 55W

BD201F BD230 BD232 BD238 BD240 BD241C BD242C BD243F BD244F BD277 BD303 BD317 BD329 BD335 BD337 BD371B BD387 BD411 BD442 BD537 BD539 BD545 BD638 BD651 BD679A BD681 BD683 BD711 BD722 BD744C BD751 BD792 BD829 BD839 >150MHz BD877 BD880 BD902 BD912 BD941 BD943 BD951 BDT61 >10MHz BDT61F BDT63C BDT65C BDT86A BDT88 BDT96A BDV65B BDV66C BDW22C BDW42 BDW47

SI-N 60V 8A 32W SI-N 100V 1.5A 12.5W SI-N 300V 0.25A 7W SI-P 100V 2A 25W 3MHz SI-P 45V 2A 30W SI-N 100V 3A 40W 3MHz SI-P 100V 3A 40W 3MHz SI-N 200V 6A 65W 3MHz SI-P 200V 6A 65W 3MHz SI-P 45V 7A 70W >10MHz SI-N 60V 8A 55W >3MHz SI-N 100V 16A 200W 1MHz SI-N 32V 3A 15W 130MHz N-DARL 100V 6A 60W N-DARL+D 120V 6A 60W >10MHz SI-N 60V 1,5A 2,5W SI-N 80V 1A 10W >250MHz N-DARL 50V 2A 10W B>25K SI-P 80V 4A 36W 3MHz SI-N 80V 8A 50W SI-N 40V 5A 45W SI-N 40V 15A 85W 3MHz SI-P 100V 2A 30W >3MHz N-DARL 120V 8A 62.5W N-DARL+D 80V 4A 40W N-DARL+D 100V 4A 40W B>75 N-DARL 120V 4A 40W SI-N 100V 12A 75W SI-P 80V 4A 36W >3MHz SI-P 110V 15A 90W 5MHz SI-N 100V 20A 200W SI-P 100V 4A 15W SI-N 100V 1A 8W SI-N 45V 1.5A 10W 125MHz N-DARL 80V 1A 9W 200MHz P-DARL 100V 1A 200MHz P-DARL 100V 8A 70W SI-P 100V 15A 90W SI-N 140V 3A 30W 3MHz SI-N 22V 5A 40W 3MHz SI-N 80V 5A 40W >3MHz N-DARL+D 60V 4A 50W >10MHz N-DARL+D 60V 4A N-DARL 120V 10A 90W B>1K N-DARL 120V 12A 125W B>1K SI-P 100V 15A 125W 20MHz SI-P 120V 12A 117W SI-P 100V 10A 90W 4MHz N-DARL+D 100V 20A 125W B> P-DARL+D 120V 16A 200W 7MHz SI-P 100V 10A 90W >3MHz N-DARL 100V 15A 85W B>1K P-DARL 100V 15A 85W B>1K

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BD204F BD231 BD237 BD239C BD240C BD241D BD243C BD244C BD250C BD302 BD314 BD318 BD330 BD336 BD362 BD385 BD410 BD441 BD515 BD538 BD543C BD637 BD648 BD652 BD680A BD682 BD684 BD712 BD743C BD750 BD791 BD801 BD830 BD843 BD879 BD901 BD911 BD939F BD942 BD948 BD956 BDT61C BDT62C BDT64C BDT85A BDT87 BDT95A BDV64C BDV65C BDV66D BDW23C BDW46 BDW51C

SI-P 60/60V 8A 60W >7MHz SI-P 100V 1.5A 12.5W SI-N 100V 2A 25W 3MHz SI-N 100V 2A 30W 3MHz SI-P 100V 2A 30W 3MHz SI-N 120V 3A 40W 3MHz SI-N 100V 6A 65W 3MHz SI-P 100V 6A 65W 3MHz SI-P 100V 25A 125W 3MHz SI-P 60V 8A 55W >3MHz SI-P 80V 10A 150W SI-P 100V 16A 200W SI-P 32V 3A 15W P-DARL 100V 6A 60W SI-P 32V 3A 15W SI-N 60V 1A 10W >250MHz SI-N 500V 1A 20W SI-N 80V 4A 36W 3MHz SI-N 45V 2A 10W 160MHz SI-P 80V 4A 50W >3MHz SI-N 100V 8A 70W 3MHz SI-N 100V 2A 3OW >3MHz P-DARL 80V 8A 62,5W P-DARL 120V 8A 62.5W P-DARL+D 80V 4A 40W P-DARL+D 100V 4A 40W P-DARL 120V 4A 40W SI-P 100V 12A 75W POWER SI-N 110V 15A 90W >5MHz SI-P 100V 20A 200W SI-N 100V 4A 15W SI-N 100V 8A 65W >3MHz SI-P 100V 1A 8W 75MHz SI-N 100V 1.5A 10W N-DARL 100V 1A 9W 200MHz N-DARL+D 100V 8A 70W SI-N 100V 15A 90W SI-N 120V 3A 19W 3MHz SI-P 140V 3A 30W 3MHz SI-P 45V 5A 40W 3MHz SI-P 120V 5A 40W 3MHz N-DARL+D 120V 4A 50W P-DARL 120V 10A 90W B>1K P-DARL 120V 12A 125W B>1K SI-N 100V 15A 125W 20MHz SI-N 120V 15A 125W 10MHz SI-N 100V 10A 90W 4MHz P-DARL+D 120V 20A 125W B> N-DARL+D 120V 20A 125W B> P-DARL+D 160V 16A 200W N-DARL+D 100V 6A 50W P-DARL 80V 15A 85W B>1K SI-N 100V 15A 125W >3MHz

BDW83C BDW84C BDW93CF BDX11 BDX20 BDX33C BDX37 BDX47 BDX53C BDX54C BDX62C BDX64C BDX66C BDX67C BDX75 BDX87C BDX94 BDX96 BDY29 BDY58 BDY83B BF115 BF125 BF155 BF163 BF166 600MHz BF180 BF184 120MHz BF189 BF199 500MHz BF224 400MHz BF244A BF245A BF245C BF247B BF253 BF255 BF256B BF259 BF271 BF316 BF339 BF357 BF370 BF393 BF410C BF417 BF419 BF421 BF435 BF441B

N-DARL 100V 15A 150W P-DARL 100V 15A 150W N-DARL 100V 12A 40W ISOLA SI-N 160V 10A 117W >0.8MHz SI-P 160V 10A 117W >4MHz N-DARL 100V 10A 70W SI-N 80V 5A 15W 350ns P-DARL 90V 1A 5W N-DARL 100V 6A 60W B=500 P-DARL 100V 6A 60W B=500 P-DARL 120V 8A 90W P-DARL 120V 12A 117W B>1K P-DARL 120V 16A 150W N-DARL 120V 16A 150W SI-N 45V 16A 75W >0.8MHz N-DARL 100V 12A 120W SI-P 80V 8A 90W >4MHz SI-P 100V 8A 90W >4MHz SI-N 100V 30A 220W POWER SI-N 160V 25A 175W SI-P 50V 4A 36W 3MHz SI-N 50V 30mA 0.15W SI-N AM/FM V/M/O/ZF450MHz SI-N 40V 20mA 600MHz SI-N 40V 20mW 600MHz SI-N 40V 20MA 0.175W 500MHz SI-N 30V 20mA 675MHz .15W SI-N 20V 30mA 260MHz SI-N 30V 25mA 270MHz SI-N 40V 25mA 0.3W 550MHz SI-N 45V 50mA 0.25W 450MHz N-FET 30V 25mA 0.3W N-FET 30V 25mA 0.3W N-FET 30V 0.1A 0.3W 170MC N-FET 25V 25mA 0.25W SI-N 30V 30mA 150MHz SI-N 20V 30mA 200MHz .22W N-FET 30V 13mA SI-N 300V 0.1A 0.8W 90MHz SI-N 40V 30mA 240mW 1GHz SI-P UHF-M/O 550..660MHz SI-P VHF-V/M/O 500MHz SI-N 30V 0.05A 1.6GHz SI-N 40V 0.1A 0.5W >500MHz SI-N 300V 0.5A 0.65W N-FET 20V 12mA AMPLIF SI-N 300V 0.2A 6W 50MHz SI-N 300V 0.1A 6W SI-P 300V 0.1A 0.83W SI-P 160V 0.2A 0.625W 80MHz SI-P 40V 25mA 250MHz

| | | | | | | | | | | | | | | | | | | | | | | | | |

BDW83D BDW84D BDW94C BDX16A BDX32 BDX34C BDX44 BDX50 BDX53F BDX54F BDX63C BDX65C BDX66C BDX71 BDX77 BDX88C BDX95 BDY20 BDY56 BDY73 BDY90 BF120 BF152 BF161 BF164 BF173

N-DARL+D 120V 15A 150W P-DARL+D 120V 15A 150W >1 P-DARL 100V 12A 80W SI-P 140V 3A 25W 800KHz SI-N 1700V 4A 40W P-DARL 100V 10A 70W N-DARL+D 90V 1A 5W 1.5us SI-N 160V 16A 150W >800KH N-DARL 160V 6A 60W B=500 P-DARL 160V 6A 60W B=500 N-DARL 140V 8A 90W N-DARL 120V 12A 117W P-DARL 120V 16A 150W SI-N 70V 10A 75W >0.8MHz SI-N 100V 8A 60W >7MHz P-DARL 100V 12A 120W SI-N 100V 8A 90W >4MHz SI-N 100V 15A 117W 1MHz SI-N 180V 15A 115W >10MHz SI-N 100V 15A 115W >8KHz SI-N 120V 10A 60W 0.35us SI-N 220V 50mA 0.3W SI-N 30V 0.2W 800MHz VHFSI-N 50V 20mA 550MHz SI-N 40V 0.2W 600MHz SI-N 40V 25mA 0.23W SI-N 25V 20mA 650MHz SI-N 190V 0.06A 0.8W SI-N 30V 30mA 200MHz .22W SI-N 30V 20mA 0.15W SI-N 40V 25mA 0.25W N-FET 30V 25mA 0.3W N-FET 30V 25mA 0.3W N-FET 25V 25mA 0.25W N-FET 25V 25mA 0.25W SI-N 30V 30mA 260MHz .22W N-FET 30V 7mA Vgs<7.5 N-FET 30V 10mA 0.25W SI-N 300V 0.1A 0.8W 90MHz SI-N 300V 0.1A 0.625W SI-P 30V 25mA 450MHz .25W SI-P 35V 35mA >80MHz .25W SI-N UHF-V 800MHz SI-N 15V 25mA 1.3GHz N-FET 20V 0.7mA SI-N 110V 0.05A 0.3W SI-P 300V 0.2A 6W 50MHz SI-N 300V 0.1A 0.83W SI-P 30V 25mA 300MHz SI-P 40V 25mA 250MHz SI-P 40V 25mA 375MHz .25W

| BF182 | BF186 | BF195 | BF200 | BF240 | | | | | | | | | | | | | | | | | | | | BF244C BF245B BF246C BF247C BF254 BF256A BF256C BF259S BF299 BF324 BF343 BF362 BF377 BF410B BF411 BF418 BF420 BF424 BF440 BF450

BF455 BF462 BF472 BF487 BF494 BF496 BF507 BF516 850MHz BF585 BF622 BF680 BF689K BF759 1.8GHz BF770A BF799 BF820 BF840 >50MHz BF859 BF872 BF883S BF910 BF939 BF960 BF964 BF966S BF968 BF979 BF981 BF989 BF991 BF994S BF998 300MHz BFG135 BFG65 BFG96 BFQ10 BFQ232 BFQ235A BFQ252A BFQ255A BFQ262A 12.5GHz BFQ34 BFQ65 BFR29 BFR36 1.4GHz BFR38 BFR40 BFR84 BFR90A

AM/FM-V/M/O 400MHz SI-N 350V 0.5A 10W 45MHz SI-P 300V 30mA 2W 60MHz SI-N 400V 0.05A 0.83W SI-N 20V 30mA 260MHz SI-N 30V 20mA 0.3W 550MHz SI-N 30V 20mA 0.5W >750MHz SI-P 35V 20mA 850MHz SI-N SI-N SI-P SI-N SI-N SI-N SI-N SI-N SI-N 350V 0.05A 5W 70MHz 250V 0.1A 2W 40V 30mA .16W 750MHz 25V 25mA 0.36W 0.2GHz 350V 0.5A 10W VID-PO 15V 0.05A 5.5 GHZ 30V 35mA 280mW 800MHz 300V 25mA >60MHz 40V 25mA 0.28W 380MHz

| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |

BF459 BF471 BF479 BF493 BF495C BF506 BF509 BF569 BF587 BF679 BF689 BF758 BF763 BF791 BF819 BF821 BF844 BF871 BF881 BF891 BF926 BF959 BF961 BF966 BF967 BF970 BF980A BF982 BF990A BF992 BF996S BF999 BFG198 BFG94 BFG97 BFQ162 BFQ232A BFQ252 BFQ255 BFQ262 BFQ33C BFQ43 BFQ68 BFR35AP BFR37 BFR39 BFR79 BFR90 BFR91

SI-N SI-N SI-P SI-P SI-N SI-P SI-P SI-P SI-N SI-P SI-N SI-N SI-N SI-P SI-N SI-P SI-N

300V 0.1A 10W 90MHz 300V 0.1A 2W 60MHz 30V 50mA .16W 1.4GHz 300V 0.5A 0.625W 30V 30mA 200MHz 0.3W 40V 30mA 0.3W 550MHz 40V 30mA 0.3W 750MHz 40V 30mA 280mW 400V 0.05A 5W >70MHz 40V 30mA .16W 880MHz 15V 25mA 0.2W 1GHz 300V 0.5A 2W 15V 25mA 0.36W 300V 250V 300V 450V 0.1A 0.1A 25mA 0.3A 5W 1.2W 0.31W 625mW

SI-N 300V 0.1A 2.5W SI-P 300V 0.1A 1.6W 60MHz SI-N 275V 0.05A 7W >60MHz N-FET-DG 20V 50mA 0.33W SI-P 30V 220mA 750MHz .25 N-FET-DG 20V 25mA .8GHz 1 N-FET-DG 20V 30mA .2GHz 2 N-FET-DG 20V 30mA .2W .8GHz SI-P UHF TRANS. 1100MHz SI-P 20V 50mA 0.3W 1.75GHz N-FET-DG 20V 20mA VHF N-FET 20V 30mA 0.2W N-FET-DG 20V 20mA UHF N-FET-DG 20V 30mA 200MHz N-FET-DG 12V 30mA 800MHz SI-N 25V 0.15A 1W BIPOLAR SI-N 10V 50mA 0.3W 8GHz SI-N 20V 75mA 0.7W 800MHz N-FET 30V 30mA 250mW SI-N 100V 0.3A 1GHz SI-N 115V 0.3A 3W 800MHz SI-P 115V 0.3A 800MHz SI-P 115V 0.3A 3W 800MHz SI-P 115V 0.4A 5W 800MHz SI-N 18V 0.15A 2.7W 4GHz SI-N 10V 50mA 0.3W 8GHz 8 N-FET 30V 10mA Up<4V SI-N 40V 200mA 0.8W 1.3GHz SI-P 40V SI-N 70V N-FET-DG SI-N 15V 20mA 0.2W 1GHz 1A 0.8W >100MHz 20V 50MA 0.3W 30mA 5.5GHz 16dB

SI-N 300V 0.1A 1.8W SI-N 400V 0.03A >60MHz SI-P 400V 30mA <60MHz SI-P 20V 25mA 350MHz 17dB SI-N 20V 0.1A 1.1GHz N-FET-DG 20V 30mA .2GHz 2 N-FET-DG 20V 30mA .8GHz 1 SI-P 30V 20mA 900MHz .16W SI-P 35V 30mA 0.3W 1GHz N-FET-DG 18V 30mA UHF N-FET-DG 20V 40mA 200MHz N-FET-DG 18V 30mA 0.2W N-FET 20V 40mA 0.2W N-FET-DG 20V 30mA 800MHz N-FET 20V 30MA 0.2W SI-N SI-N SI-N SI-N SI-N SI-P SI-P SI-P SI-N SI-N SI-N SI-N SI-N SI-N SI-P SI-N SI-N 20V 0.1A 1W 8GHZ 15V 60mA 0.7W BIPOLA 20V 0.1A 0.5W BIPOLA 20V 0.5A 3W 1GHz 115V 0.3A 800MHz 100V 0.3A 3W 100V 0.3A 3W 1GHz 100V 0.4A 5W 1GHz 7V 20mA 0.14W 18V 18V 12V 30V 90V 90V 15V 12V 1.2A 0.3A 30mA 50mA 4W 175MHz 1 4.5W 4GHz 4.9GHz 14dB 0.25W

1A 0.8W >100MHz 1A 0.8W >100MHz 30mA 5GHz 19.5dB 50mA 5GHz 18dB

BFR91A BFR92A BFR93A 3.5GHz BFR96 BFS17 BFS20 BFS23A BFT43 70MHz BFT66 BFT95 BFW11 BFW16A BFW30 150MHz BFW44 BFW92A BFX37 BFX40 BFX55 BFX89 BFY50 BFY52 BFY64 BFY90 BGY88 BLW32 BLX15 BLY88C BLY93C BS107 BS170 BS250 BSN274 BSR14 BSR50 BSS123 BSS44 BSS68 BSS91 BSV52 BSV81 BSW68A BSX20 BSX29 BSX47 BSX59 BSY56 BU106 BU109 BU124A 100MHz BU128 BU1506DX

SI-N 12V 50mA 6GHz 14dB SI-N 15V 30mA 5.5GHz 16dB SI-N 15V 50mA 6GHz 14dB SI-N SI-N SI-N SI-N SI-N 15V 75mA 15V 25mA 30V 25mA 36V 0.5A 125/100V 5GHz 16dB 1GHz E1 450MHz G1 4.5W 500MHz 1A 0.8W

| BFR92 | BFR92R | BFR95 | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | BFR96S BFS19 BFS22A BFT25 BFT45 BFT79 BFW10 BFW12 BFW17A BFW43 BFW92 BFX34 BFX38 BFX48 BFX85 BFY39 BFY51 BFY56 BFY88 BGX885N BGY89 BLW60C BLY87C BLY89C BLY94 BS108 BS208 BSN254A BSN304 BSR31 BSR60 BSS38 BSS52 BSS89 BSS92 BSV80 BSW43 BSW85 BSX26 BSX32 BSX52 BSX88 BTS121A BU107 BU110 BU125

SI-N 15V 30mA 5GHz 19.5dB SI-N 15V 30mA 5GHz REVERS SI-N 25V 0.15A 1.5W SI-N SI-N SI-N SI-N SI-P 15V 0.1A 5.5GHz 11dB 30V 30mA 260MHz 3V 0.75A 4W 175MHz 8V 6.5mA 50mW 500NHz 250V 0.5A 0.75W

SI-N 15V 30mA 4.5GHz 12dB SI-P UHF 15V 25mA 3.6-5GHz N-FET 30V 10mA AMPL. SI-N 25V 0.3A 1.5W 1.2GHz SI-N 10V 0.1A 0.25W 1.6GHz SI-P 150V 0.1A 0.7W 50MHz SI-N 15V 25mA 3.2GHz 13dB SI-P 90V 0.1A 0.36W 70MHz SI-P 75V 1A 0.8W B>85 SI-N 60V 0.4A 2.2W 700MHz SI-N 15V 50mA 0.2W 1.3GHz SI-N 80V 1A 0.7W 55/175ns SI-N 40V 1A 0.8W 100MHz SI-P 40V 0.6A 0.7W SI-N 15V 25mA 2GHz 8dB CATV AMP. 450MHz 35dB SI-N 50V 0.65A 10W 3.5GHz SI-N 110V 6.5A 195W 275MHz SI-N 18V 3A 36W 850MHz SI-N 65V 2A 25W 175MHz N-FET 200V 0.13A 0.8W 26R N-FET 60V 0.3A 0.8W 5R P-FET 45V 0.18A 0.83W N-FET 270V 0.25A 1W <8E SI-N 75V 0.8A <35/285ns N-DARL 60V 2A 0.8W 350MHz N-FET 100V 0.17A 13/29ns SI-P 65V 5A 5W SI-P 60/40V 0.8A <50/110ns N-FET 200V 0.35A 1.5W <6E SI-N 20V 0.1A 225mW 400MHz N-FET 30V 50mA 0.2W 100E SI-N 150V 2A 5W 130MHz SI-N 40V 0.5A .36W 7/18ns SI-P 12V 0.2A 0.36W 25/35 SI-N 120V 1A 5W SI-N 45V 1A 0.8W SI-N 120V 0.5A 0.8W 100MHz SI-N 325V 10A 50W SI-N 330V 10A 85W SI-N 400V 10A 50W 6MHz SI-N 300/200V 10A 62W SI-N+D 1500V 5A 32W 0.5US

SI-P 90V 1A 0.8W >100MHz N-FET 30V 20mA AMPL. N-FET 30V 5mA AMPL. SI-N 25V 0.3A 1.5W 1.1GHz SI-P 150V 0.1A 0.4W SI-N 15V 50mA 0.3W 1.6GHz SI-N 60V 5A 0.87W SI-P 55V 1A 0.8W B>85 SI-P 30V 0.1A 0.36W SI-N 100V 1A 0.8W SI-N 45V 0.1A 0.3W 150MHz SI-N 60V 1A 0.7W SI-N 60V 1A 0.8W SI-N 25V 25mA 850MHz CATV AMPL. 860MHz 17dB CATV AMP. 450MHz 38dB SI-N 18V 9A 100W 650MHz SI-N 36V 1.53A 20W 175MHz SI-N 18V 6A 73W 800MHz SI-N 65V 6A 50W 175MHz N-FET 200V 0.23A 0.8W 8E P-FET 200V 0.2A 0.8W N-FET 250V 0.3A 1W <7E N-FET 300V 0.25A 1W <8E SI-P 70V 1A B>100 P-DARL 45V 1A 0.8W SI-N 120V 0.1A 0.2W N-DARL 100V 1A 0.8W N-FET 240V 0.3A 1W 6R P-FET 200V 0.15A 1W 38/45 N-FET 40V 10mA 0.35W SI-N 60V 0.2A 0.3W B>180 SI-N 75V 0.5A 0.5W 250MHz SI-N 40V 0.5A 0.36W SI-N 65V 1A 0.8W 35/40ns SI-N 25V 0.2A 0.3W B>180 SI-N 40V 0.5A 0.36W N-FET 100V 22A 95W 0.1E SI-N 300V 10A 50W SI-N 150V 10A 30W 15MHz SI-N 130/60V 5A 0.8W SI-N 750/250V 3A 30W TO3 SI-N 1500V 8A 35W 0.6US

| BU133 | BU1508AX

BU1508DX BU180E BU208A BU208D BU226 BU2506DX BU2508AF BU2508D BU2508DX BU2520AX BU2520DX BU2525AF BU2525D BU2527AX BU312 BU326A BU406 BU407 BU409D BU413 BU415A BU426A BU426V BU500 BU505 BU505DF BU506D BU508A BU508A BU508AF BU508D 0.7us BU508DF BU508DR BU526 BU546 BU606D BU608D BU705 BU706F BU806 BU808DF BU824 BU826A BU921P BU931T BU932P BU941ZP BUF405AF BUH1015 BUH1215 BUH315D BUH515D BUH517D BUK436/800B

SI-N+D 1500V 8A 35W 0.6US N-DARL 1500V 5A 12W SI-N 1500V 8A 150W THIN B SI-N+D 1500V 8A 150W SI-N 2000V 1.5A 10W TO3 SI-N+D 1500V 5A 45W 0.4US SI-N 1500V 8A 45W 0.4us SI-N+D 1500V 8A 125W 0.4us SI-N+D 1500V 8A 45W 0.4us SI-N 1500V 10A 45W 0.2us SI-N+D 1500V 10A 45W 0.35 SI-N 1500V 12A 45W 0.2us SI-N+D 1500V 12A 0.2us SI-N 1500V 12A 45W 0.2US SI-N 280/150V 6A 25W SI-N 900V 6A 75W SI-N 400V 7A 65W 0.75us SI-N 330V 7A 65W 0.75us SI-N+D 250V 7A 60W SI-N 330V 10A 60W TO3 SI-N 800V 12A 120W TO3 SI-N 900V 6A 114W SI-N 800/375V 6A 70W SI-N 1500V 6A 75W SI-N 1500V 2.5A 75W 0.9us SI-N+D 1500V 2.5A 20W SI-N+D 700V 5A 100W POWER SI-N 1500V 8A 125W 0.7us SI-N 1500V 8A 125W 0.7us SI-N 1500V 8A 34W 0.7us SI-N+D 1500V 8A 125W 0.7us SI-N+D 1500V 8A 34W 0.7us SI-N+D 1500V 8A 125W SI-N 800V 8A 86W SI-N 1350V 6A 100W TO3 SI-N+D 400V 7A 90W SI-N+D 400V 7A 90W SI-N 1500V 2.5A 75W 0.7us SI-N 1500V 5A 32W 0.7us N-DARL+D 400V 8A 60W 0.35 N-DARL+D 1500/700V 5A 50W N-DARL+D 650V 0.5A N-DARL+D 900V 6A 125W 0.2 SI-N 400/450V 10A 120W SI-N 450V 10A 125W N-DARL 500V 15A 125W N-DARL 350V 15A 150W SI-N 1000V 7.5A ISOLATED SI-N 1500V 14A 160W 0.11us SI-N 1500V 19A 200W 0.11us SI-N+D 1500/700V 5A 50W SI-N+D 1500/700V 8A 60W SI-N+D 1700/700V 8A 60W N-FET 800V 4A 125W <4E

| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |

BU180A BU189 BU208B BU209 BU2506DF BU2508A BU2508AX BU2508DF BU2520AF BU2520DF BU2525A BU2525AX BU2527AF BU2722AF BU325 BU326S-RFT BU406D BU407D BU412 BU414B BU415B BU426E BU433 BU500D BU505D BU506 BU506DF BU508A BU508AF BU508AF BU508D BU508DF BU522 BU536 BU603 BU608 BU626A BU706DF BU801 BU806FI BU810 BU826 BU920P BU931 BU932 BU941P BUF405A BUF410 BUH1015HI BUH315 BUH515 BUH517 BUH715 BUK437/400B

SI-N+D 400V 10A N-DARL 330V 8A 60W SI-N 700V 5A 80W 7MHz SI-N 1700V 4A 12.5W TO3 SI-N+D 1500V 5A 45W 0.4us SI-N 1500V 8A 125W 0.4us SI-N 1500V 8A 45W 0.4US SI-N+D 1500V 8A 45W 0.4us SI-N 1500V 10A 45W 0.2us SI-N+D 1500V 10A 45W 0.35 SI-N 1500V 12A 0.2us SI-N 1500V 12A 45W 0.2US SI-N 1500V 12A 45W 0.2us SI-N 1700V 10A 45W SI-N 200/200V 3A 25W SI-N 800/400V 6A 60W TO3 SI-N+D 400V 7A 65W 0.75us SI-N+D 330V 7A 65W 0.75us SI-N+D 280V 8A SI-N+D 900V 8A 60W SI-N+D 800V 12A 120W SI-N 800V 6A 70W TO220 SI-N 375V 6A 70W SI-N+D 1500/700V 6A 75W SI-N+D 1500V 2.5A 75W SI-N 700V 5A 100W POWER SI-N+D 1500V 5A 20W POWER SI-N 1500V 8A 125W 0.7us SI-N 1500V 8A 34W 0.7us SI-N 1500V 8A 34W 0.7us SI-N+D 1500V 8A 125W SI-N+D 1500V 8A 34W 0.7us N-DARL 400/375V 7A 75W SI-N 1100V 8A 62W SI-N 1350V 5A 100W 0.7us SI-N 400V 6A 90W TO3 SI-N 1000V 10A 100W SI-N+D 1500V 5A 32W 0.7us SI-N+D 600V 3A 40W SI-N+D 400V 8A N-DARL+D 600V 7A 75W N-DARL+D 800V 6A 125W 0.2 N-DARL 350V 10A 120W SI-N 500V 15A 175W N-DARL 500V 15A 175W N-DARL 500V 15A 150W SI-N 1000/450V 7.5A 80W SI-N 850V 15A 125W SI-N 1500V 14A 70W 0.11us SI-N 1500V 5A 50W SI-N 1500V 8A 60W 3.9us SI-N 1700V 8A 60W 3.9us SI-N 1500V 10A 60W N-FET 400V 14A 180W

BUK437/600B BUK443/60B BUK445/600B BUK454/800A BUK456/200B BUK456/800A BUL310 BUL45 BUL810 BUR52 BUS23 BUS48AP BUT11A BUT11AF BUT12AF BUT18A BUT30V BUT56A BUT70 BUT76A BUT92 BUV18 BUV21 BUV24 BUV26 BUV27 BUV28A BUV48A BUV48C BUV50 BUV61 BUV90 12MHz BUV98A BUW11AF BUW12A BUW13 BUW23 BUW42 BUW49 BUW72 BUW84 BUX10 BUX13 BUX22 BUX24 BUX37 8MHz BUX40 BUX41N BUX48A BUX54 BUX66 BUX80 BUX82

N-FET 600V 9A 180W <1E2 N-FET 60V 13A 25W <E1 N-FET 600V 2.2A 30W 2R5 N-FET 800V 2A 75W N-FET 200V 19A 150W <E2 N-FET 800V 4A 125W 3E SI-N 1000V 5A 75W 0.4us SI-N 400V 5A 75W 12MHz SI-N 1000V 15A 125W SI-N 350/250V 60A 350W SI-N 300V 15A 175W SI-N 1000V 15A 125W SI-N 1000V 5A 100W 0.8us SI-N 1500V 5A 20W 0.8us SI-N 1000V 8A 23W 0.8us SI-N 1000/450V 6A 110W 0. SI-N 200/125V 100A 250W SI-N 1000V 8A 100W SI-N 200V 40A 200W SI-N 1000V 10A 100W 0.8us SI-N 350/250V 50A 250W SI-N 120V 47A 250W 1.5us SI-N 250/200V 40A 250W SI-N 400V 30A 250W SI-N 180V 14A 85W 1.8us SI-N 240V 12A 65W 40ns SI-N 450V 10A 65W 40NS SI-N 1000V 15A 150W 0.8us SI-N 1200/700V 15A 150W SI-N 250V 25A 150W SI-N 300V 50A 250W N-DARL+D 650V 10A 125W SI-N 1000V 30A 150W 5MHz SI-N 1000V 5A 32W 0.8us SI-N 1000V 8A 125W 0.8us SI-N 850V 15A 175W 0.8us SI-P 450V 10A 125W <300NS SI-P 400V 15A 150W SI-N 160V 30A 150W SI-N 450V 10A 100W SI-N 800V 2A 50W 0.4us SI-N 160V 25A 150W 1.5us SI-N 400V 15A 150W >8MHz SI-N 300V 40A 250W POWSWI SI-N 450/400V 20A 350W >8 N-DARL 400V 15A 35W SI-N SI-N SI-N SI-N SI-P SI-N SI-N 160V 20A 120W 1.2us 220/160V 18A 120W 1000V 15A 175W 0.8us 450V 2A 10W >8MHz 200/150V 2A 35W >20MHz 800V 10A 100W 800V 6A 60W

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BUK438/800B BUK444/800B BUK446/800B BUK455/600B BUK456/60A BUK555/60B BUL310PI BUL54A BUR51 BUS14A BUS48A BUS98A BUT11A BUT12A BUT13 BUT18AF BUT34 BUT57 BUT72 BUT90 BUT93 BUV20 BUV23 BUV25 BUV26A BUV28 BUV46A BUV48AF BUV48CF BUV56A BUV70 BUV93 BUW11A BUW12 BUW12F BUW13A BUW26 BUW48 BUW50 BUW81A BUW85 BUX12 BUX20 BUX23 BUX32B BUX39 BUX41 BUX42 BUX51 BUX55 BUX77 BUX81 BUX84

N-FET 800V 7.6A 220W 2E N-FET 800V 1.2A 30W 8E N-FET 800V 2A 30W N-FET 600V 4A 100W 2R5 N-FET 60V 52A 150W 0.028E N-FET 60V 35A 125W 0.055E SI-N 1000V 5A 35W 0.4us SI-N 1000V 4A 65W 20MHz SI-N 300/200V 60A 350W SI-N 1000/450V 30A 250W SI-N 1000V 15A 175W SI-N 450V 30A 250W SI-N 1000V 5A 100W 0.8us SI-N 1000V 8A 125W 0.8us N-DARL+D 400V 28A 175W SI-N 1000V 6A 33W 0.8us N-DARL+D 850V 50A 250W N-DARL+D 400V 15A 110W B> SI-N 400V 40A 200W SI-N 200V 50A 250W SI-N 600V 4A 55W 9MHz SI-N 160V 50A 250W 1.5us SI-N 325V 40A 250W SI-N 500V 20A 250W SI-N 200V 20A 85W SI-N 400V 10A 65W 40ns SI-N 1000/450V 6A 85W SI-N 1000V 15A 65W SI-N 1200V 15A 65W SI-N 1000V 10A 70W SI-N 1300/550V 10A 140W SI-N 600/350V 2A 15W SI-N 1000V 5A 100W 0.8us SI-N 850V 8A 125W 0.8us SI-N 850V 8A 34W 0.8us SI-N 1000V 15A 175W 0.8us SI-N 800V 10A 125W 20MHz SI-N 120V 30A 150W 1.5us SI-N 250V 25A 150W TO-218 N-DARL 800V 10A 80W SI-N 1000V 2A 50W 0.4us SI-N 300V 20A 150W SI-N 160V 50A 350W 1.5us SI-N 400/325V 30A 350W SI-N 1000V 8A 150W SI-N 120/90V 30A 120W SI-N SI-N SI-N SI-N SI-N SI-N SI-N 250V 15A 120W 300V 12A 120W 300/200V 3.5A 10W >8 450V 2A 10W 8MHz 100V 5A 40W >2.5MHz 1000V 10A 100W 800V 2A 40W 0.4us

BUX85 BUX86P BUX87P BUX98A BUY18S 90MHz BUY49P BUY69A BUY71 BUY89 BUZ100 BUZ11A BUZ15 BUZ21 BUZ22 BUZ310 BUZ326 BUZ332 BUZ338 BUZ345 BUZ380 BUZ50A BUZ71AF BUZ72AF BUZ73A BUZ900 BUZ905 BUZ90A BUZ91A CA3018 D44H8 DTA114EK DTA114TL DTA124ES DTA143EK DTA144EK DTA144TS DTC114TS DTC124EK DTC143EK DTC143TS DTC144EK DTC144EU DTC144WS FT5754M GD243 GT20D201 HPA100R IR2403 IRF120 IRF230 IRF250 IRF340 IRF440 IRF520

SI-N SI-N SI-N SI-N SI-N

1000V 2A 40W 0.4us 800V 0.5A 20W 0.4us 1000V 0.5A 20W 0.4us 450V 30A 250W 80/40V 10A 20W

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BUX85F BUX87 BUX88 BUX98C BUY47 BUY49S BUY70A BUY72 BUZ10 BUZ11 BUZ14 BUZ171 BUZ215 BUZ30A BUZ325 BUZ330 BUZ332A BUZ341 BUZ349 BUZ384 BUZ71 BUZ72A BUZ73 BUZ90 BUZ901 BUZ906 BUZ90AF BUZ93 D44H11 D45H11 DTA114ES DTA114YL DTA124XS DTA143ES DTA144ES DTC114ES DTC114YS DTC124ES DTC143ES DTC143XS DTC144ES DTC144TS ESM6045DV FT5764M GT20D101 H6N80 HPA150R IR2422 IRF140 IRF240 IRF330 IRF350 IRF450 IRF530

SI-N SI-N SI-N SI-N SI-N

1000V 2A 18W 0.4us 1000V 0.5A 20W 0.4us 1500V 12A 160W 7MHz 1200V 30A 250W 5MHz 150/120V 7A 10W

SI-N 250V 3A 10W SI-N 1000V 10A 100W 1us SI-N 2200V 2A 40W HORDEFL SI-N 1500V 6A 80W N-FET 50V 60A 250W 0.18E N-FET 50V 27A 90W 0.055R N-FET 50V 45A 125W N-FET 100V 21A N-FET 100V 34A 125W 0.055 N-FET 1000V 2.5A 75W <5E N-FET 400V 10.5A 125W N-FET 600V 8.5A 150W 0.8R N-FET 500V 13.5A 180W <E4 N-FET 100V 41A 150W <E045 N-FET 1000V 5.5A 125W 140 N-FET 1000V 2.5A 75W 5E N-FET 50V 11A 35W 0.12R N-FET 100V 10A 40W ISOLAT N-FET 200V 5.8A 40W 0.6R N-FET 160V 8A 125W P-FET 160V 8A 125W N-FET 600V 4A 75W 2R N-FET 600V 8A 150W 0.9R DARLINGTON BJT ARRAY SI-N 60V 10A 50W SI-P 50V 0.1A 0.2W 10K/10 SI-P 50V 0.1A 10KOHM SI-P 50V 0.1A 22K/22KOHM SI-P 50V 0.1A 0.2W 47/47K SI-P 50V 0.1A 0.2W 47K/47 SI-P 50V 0.1A 0.3W Rb=47K SI-N 50V 0.1A 10K SI-N 50V 0.1A 0.2W 22/22K SI-N 50V 0.1A 0.2W 4K7/4K SI-N 50V 0.1A 4K7OHM SI-N 50V 0.1A 0.2W 47/47K SI-N 50V 0.1A 0.2W 47/47K SI-N 50V 0.1A 0.2W 47/22K DARLINGTON ARRAY GE-P 65V 3A 10W P-IGBT 250V 20A 250W SI-N+D 1500V 10A 150W 0.2 DARL.ARRAY 7x45V 0.4A N-FET 100V 9.2A 60W <58/5 N-FET 200V 9A 75W <0E4 N-FET 200V 30A 150W N-FET 400V 10A 125W <62/1 N-FET 500V 8A 125W <0E85 N-FET 100V 10A 70W 0.27R

SI-N 250V 3A 10W 50MHz SI-N 1000/400V 10A 75W SI-N 280/200V 10A 60W N-FET 50V 20A 80W 0.08R N-FET 50V 36A N-FET 50V 39A 125W P-FET 50V 8A 40W 0.3R N-FET 500V 5A 75W <1E5 N-FET 200V 7A 75W N-FET 400V 12.5A 125W <E3 N-FET 500V 9.5A 125W 0E6 N-FET 600V 8A 150W 0.9E N-FET 200V 33A 170W 0.07E N-FET 100V 32A 125W N-FET 500V 10.5A 125W N-FET 50V 18A 80W 0.1R N-FET 100V 11A N-FET 200V 7A 40W 0.4R N-FET 600V 4.5A 70W <1E6 N-FET 200V 8A 125W P-FET 200V 8A 125W N-FET 600V 4.3A 75W N-FET 600V 3.6A 80W <2E5 SI-N 80V 10A 50W 50MHz SI-N 80V 10A 50W 0.5us SI-P 50V 0.1A 10K/10KOHM SI-P 50V 0.1A 10K/47KOHM SI-P 50V 0.1A 22K/47KOHM SI-P 50V 0.1A 4K7/4K7OHM SI-P 50V 0.1A 47K/47K SI-N 50V 0.1A 10K/10KOHM SI-N 50V 0.1A 10K/47K SI-N 50V 0.1A 22K/22KOHM SI-N 50V 0.1A 4K7/4K7OHM SI-N 50V 0.1A 0.3W 4.7K/1 SI-N 50V 0.1A 47K/47KOHM SI-N 50V 0.1A 0.3W 47KOhm N-DARL+D 450V 84A 250W DARLINGTON ARRAY N-IGBT 250V 20A 180W N-FET 800V 4.2A 170W 1E9 SI-N+D 1500V 15A 180W 0.2 7XDARLINGTON TRAN. ARRAY N-FET 100V 28A 150W 0E77 N-FET 200V 18A 125W N-FET 400V 5.5A 75W <1E N-FET 400V 13A 150W 0.4E N-FET 500V 13A 150W N-FET 100V 16A 90W 0.16R

IRF540 IRF640 IRF730 IRF740F IRF830 IRF840 IRF9140 IRF9530 IRF9610 IRF9630 IRFBC30 IRFBE30 IRFD9120 IRFF120 IRFP064 IRFP150 IRFP250 IRFP350 IRFP450 IRFP9140 IRFPC40 IRFPE40 IRFPF40 IRFR9024 IRFZ44 ITT9013G J300 J310 KSA733 120MHz KSC2328A KSC2331 KTC3198 KTC9013 KTC9015 KTD1351 LM394H M54661P 450MHz MGF1302 MJ10005 MJ10012 1us MJ11015 MJ11032 MJ15003 MJ15015 MJ15022 MJ15024 MJ16018 MJ2955 MJ4032 MJ413 MJ802 MJE13005

N-FET 100V 28A 150W 0.077 N-FET 200V 18A 125W 0.18R N-FET 400V 5.5A 100W 1.0R N-FET 400V 5.5A 40W <E55 N-FET 500V 4.5A 100W 1.5R N-FET 500V 4.5A 40W 0.85R P-FET 100V 19A 125W P-FET 100V 12A 88W 0.3R P-FET 200V 1.75A 20W 3R0 P-FET 200V 6.5A 75W 0R8 N-FET 600V 3.9A 100W 2R2 N-FET 800V 4.1A 125W <3E P-FET 100V 1A 1.3W <E6 N-FET 100V 6A 20W 0.3E N-FET 60V 70A 300W <E009 N-FET 100V 40A 180W 0E55 N-FET 200V 33A 180W N-FET 400V 18A 250W 0E3 N-FET 500V 14A 180W 0E4 P-FET 100V 19A 150W OE2 N-FET 600V 6.8A 150W 1.2E N-FET 800V 5.4A 150W <2E N-FET 900V 4.7A 150W <2E5 P-FET 60V 9.6A 50W 0.28W N-FET 60V 46A 250W 0E028 SI-N 30V 0.5A 100MHz N-FET 25V 6mA 0.35W N-FET 25V 60mA Up<6.5V VH SI-P 60V 0.15A 0.25W 50MHz SI-N 30V 2A 1W 120MHz SI-N 80V 0.7A 1W 30MHz SI-N 60V 0.15A 0.4W 130MHz SI-N 30V 0.5A 0.625W SI-P 50V 0.15A 0.625W SI-N 60V 3A 30W 3MHz SUPERMATCH TRANS.PR. 4xTRANS.ARRAY+DIODE 1.5A N-FET 6V 0.1A 0.3W 4GHz N-DARL+D 500/400V 20A 175 N-DARL+D 600V 10A 175W P-DARL 120V 30A 200W N-DARL 120V 50A 300W SI-N 140V 20A 250W 3MHz SI-N 120V 15A 180W 0.8MHz SI-N 350/200V 16A 250W SI-N 250V 16A 250W SI-N 1500V 10A 175W SI-P 100V 15A 150W 4MHz P-DARL 100V 10A 150W SI-N 400V 10A 125W > 2.5MHz SI-N 90V 30A 200W SI-N 300V 8A 75W

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IRF630 IRF644 IRF740 IRF820 IRF830F IRF840F IRF9240 IRF9540 IRF9620 IRF9640 IRFBC40 IRFD120 IRFD9220 IRFP054 IRFP140 IRFP240 IRFP340 IRFP360 IRFP460 IRFP9240 IRFPC50 IRFPE50 IRFPF50 IRFZ20 IRFZ48 J111 J309 KSA708 KSC2316 KSC2330 KTA1273 KTC9012 KTC9014 KTC9018 LM394CH LM395T MAT02FH

N-FET 200V 9A 75W 0.4E N-FET 250V 14A 125W <E28 N-FET 400V 10A 125W 0.55R N-FET 500V 3A 75W 3.0R N-FET 500V 3A 35W 1.5R N-FET 500V 4.5A 40W 0.85R P-FET 200V 11A 125W <E5 P-FET 100V 19.0A 150W 0R2 P-FET 200V 3.5A 40W 1R5 P-FET 200V 11A 125W 0R5 N-FET 600V 6.2A 125W 1R2 N-FET 100V 1.3A 1.3W <E27 P-FET 200V 0.6A 1E5 1W <9 N-FET 60V 70A 230W <0E014 N-FET 100V 31A 180W OE77 N-FET 200V 20A 150W 0E18 N-FET 400V 11A 150W <E55 N-FET 400V 28A 410W 0.2E N-FET 500V 25A 410W OE27 P-FET 200V 12A 150W N-FET 600V 13A 250W 0.60E N-FET 900V 7.8A 190W <1E2 N-FET 900V 6.7A 190W <1E6 N-FET 50V 15A 40W <120/70 N-FET 60V 50A 250W 0.018E N-FET 40V 50mA 0.4W 30E N-FET 25V 30mA Up<4V VHF SI-N 80V 0.7A 0.8W 50MHz SI-N 120V 0.8A 0.9W SI-N 300V 0.1A 50MHz SI-P 30V 2A 1W 120MHz SI-P 30V 0.5A 0.625W SI-N 50V 0.15A 0.625W SI-N 30V 20mA 0.2W 500MHz SUPERMATCH TRANS.PR. BLOWOUT RESIST. TRANSISTO 2xSI-N 40V 20mA 0.5W N-DARL+D 500V 20A 175W B> N-DARL 80V 8A 90W N-DARL+D 500V 50A 250W N-DARL 120V 30A 200W P-DARL 120V 50A 300W SI-P 140V 20A 250W 3MHz SI-P 120V 15A 180W 0.8MHz SI-P 350V 16A 250W 4MHz SI-P 400V 16A 250W 4MHz P-DARL 80V 10A 150W N-DARL 80V 10A 150W N-DARL 100V 16A 150W SI-P 100V 30A 200W SI-N 300V 4A 75W TO220 SI-N 300V 8A 75W

| MJ10001 | MJ1001 | MJ10016 | | | | | | | | | | | | MJ11016 MJ11033 MJ15004 MJ15016 MJ15023 MJ15025 MJ2501 MJ3001 MJ4035 MJ4502 MJE13004 MJE13005

MJE13007 MJE15030 MJE18004 MJE18008 MJE243 MJE270 MJE2955T MJE340 MJE5850 MJE8502 MJF18008 MJW16018 MJW16212 MPS3640 MPSA10 MPSA14 100MHz MPSA42 20MHz MPSA56 >125MHz MPSA92 650MHz MRF237 MRF475 >10MHz P6N60 PH2369 PN2907 PN3563 100MHz R1004 S175 S2000AF S2055N SGSF313 SGSF344 SGSF464 SGSIF444 SLA4390 SS8550 200MHz SSM2220P STA341M STA402A STA434A STA451C STA8012 STP3NA60 STP4NA60 STP4NA80 STW15NA50 THD200FI TIP107 TIP117

SI-N 400V 8A 80W SI-N 150V 8A 50W 30MHz SI-N 450V 5A 100W 13MHz SI-N 450V 8A 125W 0.3US SI-N 100V 4A 15W >40MHz N-DARL 100V 2A 15W >16MHz SI-P 70V 10A 90W AFPOWER SI-N 300V 0.5A 20W VIDPOW SI-P 350/300V 8A 80W SI-N 700V 5A 80W B>750 SI-N 450V 8A 45W 0.3us SI-P 800V 10A 150W 3MHz SI-N 650V 10A 150W SI-P 12V 80mA 635mW 500MHz SI-N 40V 0.1A 0.21W 50MHz SI-N 30V 0.5A 0.625W SI-N 300V 0.5A 0.625W SI-P 80V 0.5A 0.625W DRIV SI-P 300V 0.5A 0.625W SI-N 36V 0.6A 4W 174MHz SI-N 20V 4A 4W 50MHz N-FET 600V 6A SI-N 15V 0.5A SI-P 40V 0.6A SI-N 30V 50mA 125W 0.5W 0.4W 0.2W 1E8 12/18ns PLASTI 600MHz

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MJE13009 MJE15031 MJE18006 MJE210 MJE253 MJE271 MJE3055T MJE350 MJE800 MJF18004 MJF18204 MJW16206 MPF102 MPSA06 MPSA12 MPSA18

SI-N 400V 12A 100W SI-P 150V 8A 50W 30MHz SI-N 450V 6A 100W 14MHz SI-P 40V 5A 15W >65MHz SI-P 100V 4A 15W >40MHz P-DARL 100V 2A 15W B>1K5 SI-N 70V 10A 90W AFPOW. SI-P 300V 0.5A 20W VIDPOW N-DARL+D 60V 4A 40W B>750 SI-N 450V 5A 35W 13MHz SI-N 600V 5A 35W 13MHz SI-N 1200V 12A 150W 3MHz N-FET 25V 2mA Up<8V SI-N 80V 0.5A 0.625W DRIV N-DARL 20V 0.5A 0.625W SI-N 45V 0.2A 625mW SI-N 500V 0.3A 625mW SI-P 40V 0.1A 0.35W SI-N 25V 40mA 0.35W SI-N 36V 15A 60W 30MHz N-DARL+D 120V 4A 40W SI-N SI-N SI-P SI-P 75V 75V 60V 25V 0.8A 0.8A 0.6A 0.5A 0.5W PLASTI 0.5W PLASTI 0.4W PLASTI 0.625W

| MPSA44 | MPSA70 | MPSH10 | MRF455 | ON4359 | | | | | | | | | | | | | | | | | | | | | | | | | | | PH2222A PN2222A PN2907A PN3638 RFP40N10 S1854 S2000N S2530A SGSF313XI SGSF445 SGSIF344 SLA4061 SS8050 SSM2210P STA301A STA401A STA403A STA441C STA471A STA901M STP3NA60F STP4NA60F STP4NA80F SUP70N06-14 TIP102 TIP112 TIP122

SI-N 50V 0.1A 47K/47K RF PWR AMP TRANSIST0R SI-N 1500V 8A 50W 0.7us SI-N+D 1500V 8A 50W 0.3us SI-N 450V 7A 70W 0.3us SI-N 600V 7A 85W SI-N 600V 10A 140W SI-N 600V 7A 55W DARLINGTON ARRAY SI-P 40V 1.5A 1W 100MHz 2xSI-P 36V 20mA 0.5W 190MHz P/N-ARRAY 30V 1A B>100 P-ARRAY 4x50V 4A B>1K P/N-ARRAY 2*60V 4A 20W B> P/N-ARRAY 2x60V 3A B>40 TRANSISTOR ARRAY N-FET 600V 2.9A 80W <4E N-FET 600V 4.3A 100W <2E2 N-FET 800V 4A 110W <3E N-FET 500V 14.6A 190W 0.0 SI-N 1500V 10A 60W P-DARL 100V 15A 80W P-DARL 100V 2A 50W

N-FET 100V 40A 160W 0.04E DRIVER STAGE 112.5/117.5V SI-N 1500V 8A 50W 0.7us SI-N 1000V 10A 100W SI-N 1000V 5A 25W 0.3us SI-N 600V 7A 95W SI-N 600V 7A 35W N-DARL 120V 5A 25W POWER SI-N 40V 1.5A 1W 100MHz 2xSI-N 40V 20mA 0.5W N-ARRAY 3x60V 4A B>1K N-ARRAY 4x60V 4A B>1K N-ARRAY 4x100V 4A B>1K N-ARRAY 4x160V 1.5A B>40 N-ARRAY 4x60V 2A B>2K TRANSISTOR ARRAY N-FET 600V 2.1A 40W <4E N-FET 600V 2.7A 40W <2E2 N-FET 800V 2.5A 45W <3E N-FET 60V 70A 142W 0.014E N-DARL 100V 8A 80W N-DARL 100V 2A 50W N-DARL 100V 5A 65W

TIP127 TIP137 TIP142T TIP152 TIP2955 TIP3055 TIP34C TIP36C TIP42C TIP54 TIPL760A TIPL762A TIPL790A U440 UPA81C VN66AFD ZTX213 ZTX450 ZTX653 ZTX753M1TA

P-DARL 100V 5A 65W P-DARL 100V 8A 70W N-DARL 100V 10A 80W N-DARL+D 400/400V 7A 80W SI-P 100V 15A 90W NF/S-L SI-N 100V 15A 90W NF/S-L SI-P 100V 10A 80W 3MHz SI-P 100V 25A 125W 3MHz SI-P 140V 6A 65W SI-N 500V 3A 100W >2.5MHz SI-N 100V 4A 80W 12MHz SI-N 800V 6A 120W POWER SI-N 150V 10A 70W 10MHz 2xN-FET 25V 30mA 0.35W N-ARRAY 8x40V 0.4A B>1K N-FET 60V 2A 12W 3E Up<2. SI-P 45V 0.2A 0.3W 350MHz SI-N 60V 1A 1W 150MHz SI-N 120V 2A 1W >140MHz SI-P 120V 2A 1W

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TIP132 TIP142 TIP147 TIP162 TIP29E TIP33C TIP35C TIP41C TIP50 TIPL760 TIPL761A TIPL763A TIPL791A UPA63H VN10KM VN88AFD ZTX342 ZTX550 ZTX753

N-DARL 100V 8A 70W N-DARL 100V 10A 125W P-DARL+D 100V 10A 125W N-DARL 380V 10A 3W SI-N 180V 2A 30W >3MHz SI-N 115V 10A 80W SI-N 100V 25A 125W 3MHz SI-N 100V 6A 65W 3MHz SI-N 400V 1A 40W 2us SI-N 850/400V 4A 75W SI-N 1000V 4A 100W SI-N 1000V 8A 120W 8MHz SI-N 450V 4A 75W 2xN-FET 60V Idss>20mA 0.5 N-FET 60V 0.31A 5E Up<2.5 N-FET 80V 1.3A 20W Up<2.5 SI-N 120V 0.1A 0.3W SI-P 60V 1A 1W >150MHz SI-P 120V 2A 1W TO92

Integrated Circuits

IC AH-27 AH-29 AN103 AN240P AN252 AN377 AN612 AN6040

Description Single-Chip Microcontroller with Display driver and PLL Single-Chip Microcontroller with Display driver and PLL VCO Mixer and Amplifier FM IF Amplifier and Discriminator 5 Watt Audio Power Amplifier FM IF-amplifier and Detector Balanced modulator PLL Frequency Synthesizer

AN6821N AN7140 AN5215 AN5730 AN5732 AN7205 BA401 BA403 BA521 C3001A CA3012 CA3028 CA3053 CA3089E CX7925B EM-27 GL3201 HA1125 HA1137 HA1139 HA11225 HD10551 HD42851

High Speed Frequency Divider 5 Watt Audio Power Amplifier FM IF Amplifier and Discriminator FM IF Amplifier and Discriminator FM IF Amplifier and Discriminator RF Front End Amplifier, Mixer and IF-Amplifier Balanced RF / IF Amplifier FM IF-Amplifier and Discriminator 5 Watt Audio Power Amplifier VCO Mixer and Amplifier FM IF Wideband Amplifier HF Amplifier HF Amplifier FM IF-amplifier and Detector Serial Input PLL Frequency Synthesizer Single-Chip Microcontroller with Display driver and PLL FM IF Amplifier and Discriminator FM IF Amplifier and Discriminator FM IF-amplifier and Detector Video Amplifier FM IF Amplifier and Discriminator Programmable Divider PLL Frequency Synthesizer

HD42853 HD404829 IR3N06 KA2101 KA2245 KA3361 KA22495 KB4402 KIA6003 KIA6040 KIA6057 KIA6058AS KIA6410P KIA7130P KIA7217 KIA7310P KM5624 KS8805 KT615 KT3361B KTA6058 LA1150 LA1178

PLL Frequency Synthesizer MCU Low Power Narrowband FM IF FM IF Amplifier and Discriminator FM IF Amplifier and Discriminator Low Power Narrowband FM IF RF Front End Amplifier, Mixer and IF-Amplifier FM IF-amplifier and Detector FM IF-Amplifier and Discriminator FM IF-Amplifier and Discriminator FM IF-Amplifier and Discriminator RF Front End Amplifier, Mixer and IF-Amplifier VCO Mixer and Amplifier FM IF Amplifier and Audio Preamplifier Audio Power Amplifier VCO Mixer and Amplifier PLL Frequency Synthesizer PLL Frequency Synthesizer Balanced RF / IF Amplifier Low Power Narrowband FM IF RF Front End Amplifier, Mixer and IF-Amplifier FM IF Amplifier and Discriminator RF Front End Amplifier, Mixer and IF-Amplifier

LA1185 LA1231N LA1365 LA4201 LA4260 LA4446 LA4485-T LA6458S LC5121 LC7110 LC7113 LC7120 LC7130 LC7131 LC7132 LC7135 LC7136 LC7137 LC7185 LC7232 LC7233 LC72322 LC72336/8

RF Front End Amplifier, Mixer and IF-Amplifier FM IF Amplifier and Discriminator FM IF Amplifier and Discriminator Audio Power Amplifier Audio Power Amplifier Audio Power Amplifier Audio Power Amplifier Dual Operational Amplifier PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer Single-Chip Microcontroller with Display driver and PLL Single-Chip Microcontroller with Display driver and PLL Single-Chip Microcontroller with Display driver and PLL Single-Chip Microcontroller with Display driver and PLL

LM386N LM733 LM1396 LM1496 LM1596 LM2111M LM2113N LM3028 LM3065N LM3089N LM3189N LM3361 LMX2216 LSC1008P M5183P M51173P M51361P M54459L M54460L M58472P M58473P M58476

Audio Power Amplifier Video Amplifier Balanced modulator / Demodulator Balanced modulator / Demodulator Balanced modulator / Demodulator Low Power Narrowband FM IF Low Power Narrowband FM IF HF Amplifier FM IF Amplifier and Discriminator Low Power Narrowband FM IF FM IF-amplifier and Detector Low Power Narrowband FM IF Low Noise Amplifier and Mixer FM IF Amplifier and Discriminator Video Amplifier FM IF Amplifier and Discriminator General Purpose Phase Lock Loop High Speed Frequency Divider High Speed Frequency Divider PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer

MB3712 MB3713 MB8719 MB8733 MB8734 MB8738 MB87014A MB87086A MC1350P MC1352P MC1357P MC1496 MC2831 MC2833 MC3357 MC3359 MC3361 MC3371 MC3372 MC13135 MC13136 MC145104 MC145106

5,7 Watt Audio Power Amplifier 5,7 Watt Audio Power Amplifier PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer Serial Input PLL Frequency Synthesizer Serial Input PLL Frequency Synthesizer Video Amplifier Video Amplifier Low Power Narrowband FM IF Balanced modulator / Demodulator FM Transmitter System FM Transmitter System Low Power Narrowband FM IF Low Power Narrowband FM IF Low Power Narrowband FM IF Low Power Narrowband FM IF Low Power Narrowband FM IF Low Power Narrowband FM IF Low Power Narrowband FM IF PLL Frequency Synthesizer PLL Frequency Synthesizer

MC145107 MC145109 MC145151 MC145152 MC145155 MC145156 MC145157 MC145158 MC145163 MM48141 MM55104 MM55106 MM55107 MM55108 MM55116 MM55126 MN6040 MN6040A MSC42502P MSM5807 MSM5907 MWA110 MWA120

PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer Wide-Band RF Amplifier Wide-Band RF Amplifier

MWA130 N5596 NDC40013 NE565N NE592 NE602 NE605 NE606 NE612 NE616 NJM386N NJM386S NJM1496 NJM2203 NJM2206 NJM2902N NJM3357 NJM3359 NJM4558 NJM4558S PLL02A PLL03A PLL0305A

Wide-Band RF Amplifier Balanced modulator / Demodulator PLL Frequency Synthesizer General Purpose Phase Lock Loop Video Amplifier Double-balanced mixer and oscillator FM IF Amplifier and Discriminator FM IF Amplifier and Discriminator Double-balanced mixer and oscillator FM IF Amplifier and Discriminator Audio Power Amplifier Audio Power Amplifier Balanced modulator / Demodulator Double-balanced mixer and oscillator FM IF-Amplifier and Discriminator Quad Operational Amplifier Low Power Narrowband FM IF Low Power Narrowband FM IF Dual Operational Amplifier Dual Operational Amplifier PLL Frequency Synthesizer PLL Frequency Synthesizer Serial Input PLL Frequency Synthesizer

PLL08A PLL2002A RCI8719 RCL10483 REC86345 REN1165 RL7320 SA602A SA604A SA612A SC70231P SK1166 SK3225 SK3445 SK3487 SK3827 SK7799 SM5104 SM5107 SM5109 SM5118 SM5123A

PLL Frequency Synthesizer Serial Input PLL Frequency Synthesizer PLL Frequency Synthesizer Narrowband FM/AM IF-amplifier and Demodulator PLL Frequency Synthesizer 5 Watt Audio Power Amplifier Balanced Modulator / Demodulator Double-balanced mixer and oscillator Low Power Narrowband FM IF Double-balanced mixer and oscillator Video Amplifier 5 Watt Audio Power Amplifier Balanced RF / IF Amplifier VCO Mixer and Amplifier FM IF Amplifier and Discriminator 5 Watt Audio Power Amplifier Audio Power Amplifier PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer

SM5124A SM5152A SM5158A SN76514 SN76600P SN76642N SN76650P SN76643N SN76664N SO42P STK4241 SY-105 SY-202 SY-203 SY-204 SY-501 TA7045 TA7130 TA7176P TA7200 TA7204 TA7205P TA7217AP

PLL Frequency Synthesizer Serial Input PLL Frequency Synthesizer PLL Frequency Synthesizer Balanced modulator / Demodulator Video Amplifier Low Power Narrowband FM IF Video Amplifier Low Power Narrowband FM IF FM IF Amplifier and Discriminator Duble Balanced Modulator / Demodulator Audio Power Amplifier Single-Chip Microcontroller with Display driver and PLL Single-Chip Microcontroller with Display driver and PLL Single-Chip Microcontroller with Display driver and PLL Single-Chip Microcontroller with Display driver and PLL Single-Chip Microcontroller with Display driver and PLL HF Amplifier FM IF Amplifier and Discriminator FM IF Amplifier and Discriminator Audio Power Amplifier Audio Power Amplifier Audio Power Amplifier Audio Power Amplifier

TA7222 TA7303P TA7310P TA7320P TA7358AP TA7368 TA75557 TA75558 TC5080P TC5081P TC5082P TC9100P TC9102 TC9103 TC9106 TC9109 TC9119 TC9122P TCA3189 TDA1200 TDA1352 TDA1905 TDA2003

Audio Power Amplifier FM IF Amplifier and Discriminator VCO Mixer and Amplifier Balanced Modulator / Demodulator RF Front End Amplifier, Mixer and IF-Amplifier Audio Power Amplifier Dual Operational Amplifier Dual Operational Amplifier Programmable Divider PLL Phase-Locked-Loop Oscillator and Reference Divider PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer Programmable Divider FM IF-amplifier and Detector FM IF-amplifier and Detector Video Amplifier Audio Power Amplifier Audio Power Amplifier

TDA6130-5 TK10483 TK10487M TK10930V TM1104 TM1153 uA796 ULN2111N ULN2113N ULN2165N uPC563 uPC577H uPC1001 uPC1024 uPC1025 uPC1028H uPC1037H uPC1156 uPC1167C2 uPC1182H uPC1241H uPC1242H uPC1352

Duble Balanced Modulator / Demodulator Narrowband FM/AM IF-amplifier and Demodulator Narrowband FM/AM IF-amplifier and Demodulator Narrowband FM/AM IF-amplifier and Demodulator Balanced RF / IF Amplifier Audio Power Amplifier Balanced modulator / Demodulator Low Power Narrowband FM IF Low Power Narrowband FM IF FM IF Amplifier and Discriminator Audio Power Amplifier Balanced RF Amplifier Audio Power Amplifier Audio Power Amplifier Audio Power Amplifier FM IF Amplifier and Discriminator Duble Balanced Mixer / Amplifier Audio Power Amplifier FM IF Amplifier and Discriminator 5 Watt Audio Power Amplifier 5 Watt Audio Power Amplifier 5 Watt Audio Power Amplifier Video Amplifier

uPD858 uPD861C uPD2810 uPD2812 uPD2814 uPD2814C uPD2816 uPD2824

PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer PLL Frequency Synthesizer

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LC7233 Single-Chip Microcontroller with Built-In LCD Driver and PLL Circuits
Overview The LC7233 is a single-chip microcontroller for use in electronic tuning applications. It includes on chip both LCD drivers and a PLL circuit that can operate at up to 150 MHz. It features on-chip RAM and ROM, a programmable high-speed divider. LCD driver 6-bits keypad matrix scan output Two 4-bits input ports Two 4-bits input/output ports 2-bit open-drain high voltage output 23 mask-selectable output drivers 150MHz phase-locked loop Programmable high-speed divider Program memory (ROM): 4 k words by 16 bits Data memory (RAM): 256 4-bit digits One 6-bit A/D converter Two 8-bit D/A converters (PWM) Voltage detection type reset circuit PLL: 4.5 to 5.5 V CPU: 3.5 to 5.5 V RAM: 1.3 to 5.5 V 64-pin QIP General programming guidance of LC7233 devices with Seung Yong CPU SYSTEM 501/105. The processors SYSTEM 501 (105) with label Seung Yong are customized mask-programmed CPU's on base of the LC 7233 CPU from Sanyo. Those in the following specified possibilities apply only to CPU's with the above Seung Yong designation and not to others! (e.g. also not for the designation SY-002!) Programming are those pin 24, 25, 26 of the CPU. The indicated bridges must be manufactured from the links indicated in each case to pin 18. Pin 26 to 18 Pin 25 to 18 Pin 24 to 18 Description Connect Connect Connect 40 Channels (CEPT) - 26.965MHz to 27.405MHz Open Open Open 80/12 Channels (Germany) - 26.565MHz to 27.405MHz

Open Connect Connect Open Connect

Connect Open Connect Connect Open

Open Open Open Connect Connect

40 Channels UK - 27.60125MHz to 27.99125MHz 120 Channels Polish - 26.510MHz to 27.850MHz 240 Channels Polish - 26.060MHz to 28.750MHz 400 Channels - 25.165MHz to 29.655MHz 240 Channels - 26.065MHz to 28.755MHz

Consider please: With 120 to 400 channel programming must be in the device absolutely the CH 9-Taste wired, because this becomes with many channel operation automatically the BAND selection button! With devices with ME key in place of CH 9 the key assignment must be still umgeloetet or converted according to the following list. (devices starting from summer/autumn 1996 have in addition according to characterized solder joints on the inside the front plate circuit board, so that the change without removing the front screen is possible). Otherwise the ME key must be separated two-pole and be soldered on with thin wires to the PIN's 18 and 5 of the CPU. Key assignment: AM/FM: Pin 18 to 3 CH9: Pin 18 to 5 ME: Pin 17 to 4 SCAN: Pin 21 to 3 CH19: Pin 18 to 6 LOCK: Pin 18 to 4 Hi/Lo: Pin 21 to 4 UP: Pin 20 to 5 Light: Pin 22 to 4 DW: Pin 22 to 5 DOWN: Pin 20 to 6

General programming guidance of LC7233 devices with Maycom CPU SYSTEM AH27 The processors SYSTEM AH27 with label Maycom are customized mask-programmed CPU's on base of the LC 7233 CPU from Sanyo. Those in the following specified possibilities apply only to CPU's with the above Maycom designation and not to others!

AH27 Block Diagram

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LC72336 / LC72338 Single-Chip Microcontrollers with Built-In LCD Driver and PLL Circuits
Overview The LC72336 and LC72338 are single-chip microcontrollers for use in electronic tuners. These products include on chip a PLL circuit that can operate at up to 150 MHz and 1/3 duty LCD drivers. They feature a highly efficient instruction set and powerful hardware. Functions High-speed programmable divider Program memory (ROM) LC72336: 6143 16 bits (12 kB) LC72338: 8191 16 bits (16 kB) Data memory (RAM): 512 4 bits All instructions are one-word instructions Cycle time: 1.33 s Stack: 8 levels LCD drivers: Up to 96 segments (1/3 duty, 1/3 bias) Serial I/O: Up to 3 channels (8-bit 3-wire type) External interrupts: 2 interrupts (INT0, INT1) Interrupt on rising or falling edge (selectable) Internal interrupts: 3 interrupt Two built-in timer interrupts and 1 serial I/O interrupt Nested interrupt levels: 4 levels D/A converter: 4 channels (8-bit PWM output) A/D converter: 4 channels (6-bit successive approximation) General-purpose ports: Input ports: 8 Output ports: 12 (16 maximum) I/O ports: 8 (20 maximum, can be switched between input and output in bit units.) PLL block: Supports 4 types of dead zone control, and includes a built-in unlock detection circuit. Supports 12 different reference frequencies. Universal counter: 20 bits (Can be used for either frequency or period measurement.) Timers: Eight types of time measurement Beep function: Six beep tones Reset: Built-in voltage detection type reset circuit Halt mode: Stops the controller operating clock.

Operating supply voltage: 4.5 to 5.5 V (3.5 to 5.5 V if only the controller block operates.) 80-pin QIP General programming guidance of LC72336/8 devices with Maycom CPU SYSTEM EM27 The processors SYSTEM EM27 with label Maycom are customized mask-programmed CPU's on base of the LC 72336/8 CPU from Sanyo. Those in the following specified possibilities apply only to CPU's with the above Maycom designation and not to others!

EM27 Block Diagram

General programming guidance of LC72336/8 devices with Maycom CPU SYSTEM AH29 The processors SYSTEM AH29 with label Maycom are customized mask-programmed CPU's on base of the LC 72336/8 CPU from Sanyo. Those in the following specified possibilities apply only to CPU's with the above Maycom designation and not to others!

AH29 Block Diagram

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AN103 KIA6410S KIA7310P SK3445 TA7310P Oscillator, Mixer and Amplifier

Pin 1

Name Oscillator Input

Description

2 3 4 5 6 7 8 9 GND

Oscillator Output Oscillator Output - Buffered Mixer Input Ground Mixer Output Amplifier Input Positive Supply Voltage - 9 Volt Amplifier Output

Vcc

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AN240P FM IF Amplifier and Discriminator


Similar to LA1365 KA2101 TA7176P HA1125 LM3065N ULN2165N LSC1008P GL3201 and SN76664N

Description: The AN240P is a versitile device in a 14-Lead DIP type package incorporating IF limiting, detection, electronic attenuation, audio amplifier, and audio driver capabilities. Features: Differential Peak Detector Requiring a Single Tuned Circuit Electronic Attenuator Replaces Conventional AC Volume Control: range > 60dB Excellent AM Rejection High Stability Low Harmonic Distortion Audio Drive Capability: 6mAP-P Minimum Undesirable Output Signal @ Maximum Attenuation Pin 1 2 3 4 5 IFB IFI GND GND VCC Name IF In Bias IF Input Ground Ground Positive Supply Voltage Description

6 7 8 9 10 11 12 13 14

DC DE DO QD QD NC AO TC AI

DC Volume Control De-Emphasis Detector Output Quad Detector Quad detector No Connection Audio Output Tone Control Audio Input

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AN252 and AN7140 5 Watt Audio Power Amplifier

Ground Pin 1 2 3 4 5 6 7 8 9 GND Name Output Description

GND Vcc

Input Ground Positive Supply Voltage

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CA3089E FM IF-Amplifier and Discriminator


Similar to AN377 LM3089N HA1137 TDA1200 KB4402 and TCA3189

CA3089E FM Receiver IF System General Description: The CA3089 has been designed to provide all the major functions required for modern FM IF designs of automotive, high-fidelity and communications receivers. Features: Three stage IF amplifier/limiter provides 12 mV (typ) b3 dB limiting sensitivity Balanced product detector and audio amplifier provide 400 mV (typ) of recovered audio with distortion as low as 0.1% with proper external coil designs. Four internal carrier level detectors provide delayed AGC signal to tuner, IF level meter drive current and interchannel mute control AFC amplifier provides AFC current for tuner and/or center tuning meters Improved operating and temperature performance, especially when using high Q quadrature coils in narrow band FM communications receivers No mute circuit latchup problems Pin 1 2 3 Name IF Input IF In Bypass IF In Bypass Description

4 5 6 7 8 9 10 11 12 13 14 15 16 Vcc

Frame Mute Control Audio Output AFC Output IF Output Quad Input Ref Bias Positive Supply Voltage Mute Logic Tune Meter Ground Delayed AGC No Connection

GND NC

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AN612 Modulator / Demodulator / Mixer

Pin 1 2 3 4 5 6 7 GND VCC

Name Signal input Bias input Signal input Ground Bias output Positive Supply Voltage Output

Description

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PLL02A
MC145109 MM48141 AN6040 MN6040 SM5109 TC9100 PLL Frequency Synthesizer

Overview
This PLL-circuit use a 9 bit BCD binary programmable divide-by-N counter.

Down-converting of the frequency to the divider

This PLL Circuit use a Mixer and a X-Tal Oscillator to convert the output frequency f OUT to the f IN to the PLL Circuit. The X-Tal frequency is f XTAL = f OUT - f IN

The output frequency can be changed by changing the mixing-xtal or add a new mixing-xtal to the oscillator.

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Name VDD F in RI FS PD LD P8 P7 P6 P5 P6 P3 P2 P1 P0 Vss

Description Positive Power Supply VCO Oscillator Input Reference Oscillator Input (10.240MHz) HIGH=10kHz - LOW=5kHz VCO Voltage Out Loop Detected - HIGH=Locked LOW=Unlocked Programmable input (Binary) Programmable input (Binary) Programmable input (Binary) Programmable input (Binary) Programmable input (Binary) Programmable input (Binary) Programmable input (Binary) Programmable input (Binary) Programmable input (Binary) Ground

Explanation of pin function terms

Modification methods
A TYPICAL PLL SYNTHESIZER

Refer to the figure, which is the PLL circuit of perhaps the most common AM PLL rig ever made. It's been sold under dozens of brand names, and uses the ever-popular PLL02A IC. The SSB and export multimode versions of this circuit are very similar; there are only minor differences relating to the SSB offsets and FMing the VCO. A PLL design may be categorized very generally by the number of crystals it uses, and by whether its VCO is running on the low or high side of 27 MHz. This particular example is actually the second generation of the PLL02A AM circuit; the original PLL circuit used a total of 3 crystals. The key to synthesizing all of the required frequencies lies in the Programmable Divider. That's the only PLL section that you can control from the outside world by means of the Channel Selector. Which is where it all starts. Suppose you choose Ch., 26.965 MHz. When setting Ch.1 the Programmable Divider (PD) receives a very specific set of instructions at all its programming pins, which are directly connected to the Channel Selector. This specific set which we have called its "N-Code", applies only to Ch.l. It's just a number by which any signal appearing at the PD input pin will be divided. Binary Programing Refer now to Programming Chart, which summarizes the important operating conditions by specific channel number. A chart like this one is normally included with the radio's service manual.Often though certain facts not directly related to the legal 40-channel operation are left out, so I`lll be filling in some missing blanks for you. Programming Chart for PLL02A

Ch. No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33

Frequency (MHz) 26.965 26.975 26.985 27.005 27.015 27.025 27.035 27.055 27.065 27.075 27.085 27.105 27.115 27.125 27.135 27.155 27.165 27.175 27.185 27.005 27.215 27.225 27.255 27.235 27.245 27.265 27.275 27.285 27.295 27.305 27.315 27.325 27.335

"N" digital codes 330 329 328 326 325 324 323 321 320 319 318 316 315 314 313 311 310 309 308 306 305 304 301 303 302 300 299 298 297 296 295 294 293

VCO freq. (MHz) 17.18 17.19 17.20 17.22 17.23 17.24 17.25 17.27 17.28 17.29 17.30 17.32 17.33 17.34 17.35 17.37 17.38 17.39 17.40 17.42 17.43 17.44 17.47 17.45 17.46 17.48 17.49 17.50 17.51 17.52 17.53 17.54 17.55

RX 1st IF freq. (MHz) 37.66 37.67 37.68 37.70 37.71 37.72 37.73 37.75 37.76 37.77 37.78 37.80 37.81 37.82 37.83 37.85 37.86 37.87 37.88 37.90 37.91 37.92 37.95 37.93 37.94 37.96 37.97 37.98 37.99 38.00 38.02 38.03 38.04

P0 P1 P2 P3 P4 P5 P6 P7 P8 0 1 0 0 1 0 1 1 0 1 0 0 1 0 1 1 0 1 0 0 1 0 1 1 0 0 1 0 1 0 1 0 1 1 0 0 1 0 0 1 0 0 1 1 0 1 1 0 1 1 0 0 1 0 0 0 1 1 0 1 1 0 0 1 1 0 0 0 0 1 1 1 0 0 0 1 1 1 0 0 0 1 1 1 1 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 1 1 0 0 0 0 0 0 1 1 1 1 1 1 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1

34 35 36 37 38 39 40

27.345 27.355 27.365 27.375 27.385 27.395 27.405

292 291 290 289 288 287 286

17.56 17.57 17.58 17.59 17.60 17.61 17.62

38.05 38.06 38.07 38.08 38.09 38.10 38.00

0 1 0 1 0 1 0

0 1 1 0 0 1 1

1 0 0 0 0 1 1

0 0 0 0 0 1 1

0 0 0 0 0 1 1

1 1 1 1 1 0 0

0 0 0 0 0 0 0

0 0 0 0 0 0 0

1 1 1 1 1 1 1

From this chart you see the N-Code for Ch.l is the number "330", with the numbers progressing down to "286" at Ch.40. This number 330 is the direct result of applying +DC voltages of about 5-10 VDC to certain PLL IC pins while grounding certain others. Thus, two possible voltage choices, and you'll recall that the PLL uses a digital or binary counting system instead of the decimal system people use. In a binary number system each successive chip programming pin or "bit" (binary digit) is worth exactly double (or half) that of the pin next to it: 1, 2, 4, 8, 16, etc. Thus each pin can be defined by its Power-of-2. We can also call them "1's bit", "2's bit", "4's bit", etc. A series of "1"s and "0"s appears in the chart for each of the 40 channels. A "1" means +DC is applied to that pin, and a "0" means that pin is grounded. The pin having the highest binary value or "significance" controls the number of possible channels that can be programmed. In this example the highest Power-of-2 is "256" at Pin 7, which is called the "Host Significant Bit"; the "Least Significant Bit" is Pin 15, which is only worth a "1" in binary. A chart like this showing the logic states of each PLL program pin for each channel is called a "Truth Chart" and is helpful for troubleshooting. How exactly was the number "330" decided? In Chart you see the truth states for Ch.l only. Above each PLL program pin are numbers I`ve labelled "P0WERS 0F 2", such as 1, 2, 4, on up to 256 which is how a binary counter counts. By adding up the weight or significance of every pin showing a "1", the N-Code is determined. The "0" or grounded pins are always ignored. In this example we have: 256 + 64 + 8 + 2 = 330. Go back now to Programming Chart and notice how the logic states for Pin 7 and Pin 8 never change at all for any of the 40 channels. Then look again at Figure 11 and you'll see that those pins are Dermanently hard-wired such that Pin 7 is always tied to +DC ("1"), ana Pin 8 is always grounded ("0"). You'll often find that many service manuals won't even include these pin states in the Truth Chart because they never change when programming for the legal 40 channels only. This is a case of those missing blanks I'm filling in for you, and you can test this idea by checking the rig's schematic. Compare the total programming pins available to the total number needed for 40 N-Codesl it's an obvious modification source. The original 18-channel Australian CB service was legally expanded recently to match the 40 FCC channels. Hany of the older Aussie rigs, especially those with the Cybernet type PLL02A chassis, are simply American rigs with a limited Channel Selector switch. These can be easily expanded by replacing the 18-position switch and wiring up the unused binary bits on the PLL chip. For example, the original Australian Ch.1 was 27.015 HHz, which corresponds to U.S. Ch.5. The N-Code here is "325". The N-Code for their old Ch.18 (27-225 HHz) is "304". Reprogramming an old PLL02A rig for N-Codes greater than "325" or less than "304" expands the channels. This particular IC, the PLLO2A., has a total of 9 binary programming pins, pins 7-15. So it has what's called a "9-bit" binary programmer. Some quick math should tell you that the chip has a potential channel capacity of 29 - 1, or 511 channelsl (1+2+4+8+16+32+64+128+256 = 511). 0nly 40 channels are used for

CB purposes but by proper connection and switching of unused pins, many more frequencies are possible. The VCO Circuit Refer back to Figure. This VC0 runs in the 17 MHz range, from 17.180 MHz on Ch.1 to 17.62 MHz on Ch.40. The VC0 is controlled by an error voltage received from the PD, which is constantly lookingfor a match at the output of the Reference Divider and Programmable Divider. The Reference Divider is accurately controlled by a 10.240 MHz crystal oscillator whose signal is divided down digitally by 1,024 to produce the required 10 kHz channel spacings. If the Programmable Divider should also happen to output the exact same 10 kHz the result would be perfect; no correction from the PD, and the loop would be locked. What would it take to produce a perfect 10 kHz output from the Programmable Divider? We've alredy seen that the Programmable Divider is set to divide any signal it sees by the number 330. For example if it should see a signal of exactly 3.30 MHz at its input, the resulting output would be 3.30 MHz + 330 = 10 kHz. So if we can somehow get an input signal of 3.30 MHz, everythirig will fall perfectly into place. Loop Mixing It so happens there's a very easy way to do this by cleverly borrowing a bit of existing circuitry. If some 10.240 MHz energy from the Reference Divider is taken off and passed through a tuned Doubler stage, the result would be 2 x 10.240 = 20.480 MHz. Here's where that very important loop mixing principle enters; by mixing the 20.480 MHz signal with the Ch.1 VC0 signal of 17.180 MHz, sum and difference frequencies are generated. The sum is 20.480 + 17.180 = 37.660 MHz. The difference is 20.480 - 17.180 = 3.30 MHz. Just what's needed to lock the loop. And the 37.660 MHz energy isn't wasted either; it's used as the high-side mixer injection signal that produces the first- RX IF: 37.660 - incoming 26.965 = 10.695 MHz IF. Phase Detector Correction What happens if the mixing product to the Programmable Divider isn't exactly 3.30 MHz? Let's find out. Since the N-Code is 330, a signal of other than precisely 3.30 MHz would produce a slightly different output to the PD. For example a signal of say, 3.10 MHz results in 3.10 MHz + 330 = 9.39393 KHz. The PD will sense this error and try to correct it by applying a DC voltage to the VC0. This correction voltage will drive the VC0 up or down slightly in frequency, with the PD always comparing its two inputs, until an exact match occurs again. While this appears to be just a trial-and-error process, the whole thing happens in the time it takes you to change from Ch.1 to Ch.2 ! Receiver IF`s We've now seen how the Ch.1 PLL mixer signal of 37.660 MHZ provides the RX first IF injection. Now note from Figure that we can make even a third clever use of the 10.240 MHz Reference Oscillator. By mixing that with the 10.695 MHz first IF, the result will be 10.695 - 10.240 = 455 kHz, the second RX IF. (The sum product is ignored.) Pretty smart these engineers... Almost all AM or FM CBs use this method of dual-conversion for their receivers. It's also commonly used in car radios, scanners, FM stereos, etc. where a lot of the circuit hardware already existed. Transmitter Section In this example the TX carrier frequency is produced very simply. A local oscillator of 10.695 MHz is also mixed with the 37.660 MHz Ch.1 PLL output. The difference is 37.660 - 10.695 - 26.965 MHz, which is then coupled through various tuned circuits and the standard RF amplifier chain.

The Truth Chart is the most important first step in determining how a modification can be made. or if it can be made. Let's examine it in greater detail now. The exemple just described was a very easy PLL circuit using the binary type of programming code. It's quite possible for the same chip to heve different N-Codes depending upon how many crystals are used, or if it's AM or AM/SSB. The preceeding circuit is one of severel used with the PLL02A; this is the "2-crystel AM" loop. It used N-Codes from 330 Ch.1 to 286 Ch.40, because those were the numbers needed for exact division, correct IFs, etc. An earlier AM loop used 3 crystels and N-Codes which went up, from 224 Ch.1 to 268 Ch-40. And in the ever-populer SSB chassis the N-Codes were 255 down to 211. Notice that these N-Codes can go up or down with increasing channel numbers. It depends on the VCO design. Those Infamous Channel "Skips" Meanwhile, let's return to a portion of Programming Chart to study some of its other feetures. Programming Chart is e eimplificetion ehowing only the channel number, frequency, end N-Codes from the original full chart. Notice anything unusual in the N-Code sequence going from Ch.1 to Ch.40? The codes aren't all consecutive and skip some points that aren't legal CB frequencies. For example, Ch.3 is 26.985 MHz, end Ch.4 is 27.005 MHz. So what the heck heppened to 26.995 MHz? Gee, it's not e legel FCC channel. This is known to CB`ers as en "A" channel, in this case, Ch.3A. There are also skips et Chennels 7, 11, 15, end 19. And Ch.23, Ch.24, end Ch.25 of the FCC CB band are essigned out of sequence. (Thet's left over from the old 23-chennel deys.) What this means is that all the N-Codes es well as VCO end mixer frequencies ere also out of order in the chart. Meny Europeen countriesthat originelly ellowed only 22 channels simply adopted the Americen scheme exectly for those first 22 channels. Austrelie had 18 channels whose numbers didn't correspond to American/EEC numbers, but meny of the actual frequencies were the same. And the UK originelly assigned 40 consecutive channels with no skips at all. Remember these points when studying en older model's Truth Chart, or you mey think your math is wrong when it really isn't. LOOP MIXER MODIFICATIONS Now let's examine the second possible conversion method, that of changing the Loop Mixer frequency itself. This is one of the easiest ways to modify a PLL circuit having a downmix signal. A few chips like the PLL02A can be modified by either of the programming pin change or downmix chang methods. The choice depends upon the total number of extra channels desired, and how much modification work you're willing to do. Changing the mixer crystal is most commonly done when jumping up to the 10-Meter HAM band. Since there's no intention of ever using the rig again for CB, it can be permanently retune at the higher frequency. But many of you are still expanding from the CB band and adding an extra 40 or 80 channels. The European models like those from HAM International, Major, and SuperStar were basically just American model with the extra mixing crystals already there.

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Explanation of pin function terms


VCC or VDD This is the +DC supply voltage which actually provides the operating power to the chip, and is generally in the range of 4-8 volts. GND or VSS This is the DC power ground connection for the above. NOTE: A chip may be found to have one or more of its functional pins tied to either of the above sources. This may be done to enable a specific function by connecting that function to a ''1'' or ''0'' , or to prevent an unused function pin from ''floating'' unconnected to prevent a possible change in its logic state. RI Reference Oscillator input. This is where the (usually) 10.240 MHz crystal is connected. Crystal pins sometimes called ''X'' by the manufacturer. RO Reference Oscillator output. In most chips the crystal is simply connected across RI and RO because the chip has a built-in oscillator circuit which only requires some external capacitors. However some chips such as the PLL02A don't have the built-in oscillator; thus there is no RO pin and an active transistor oscillator is required externally which connects to RI. 1/2R A built-in divided by 2 circuit which provides an output of half the 10.240 MHz Reference Oscillator frequency, or 5.12 MHz. If used, it normally connects to a tripler circuit to provide a 15.360 MHz signal(5.12 MHz x 3) which can be used for loop mixing with the 16 MHz VCO. This mixing provides a low-frequency signal input or downmix to the Programmable Divider. RB Buffered output of the 10.240 MHz Reference Oscillator. Thig signal if present can be used for mixing with the 10.695 MHz receiver first IF or mixing with the 16 MHz VCO during TX mode to provide the 455 kHz second IF (RX) or the direct on-channel TX frequency. FIN Input to the Programmable Divider which is coming from the output of the VCO. Sometimes called ''PI'' (Programmable Input) or ''DI'' (Divider Input) by some manufacturers. This is the actual downmix signal or direct VCO signal in the faster chips which will be compared to the Reference Divider's output in the Phase Detector. It is the change in this signal's frequency which forces the Phase Detector and VCO to correct until the loop locks. DO Phase Detector output. Sometimes called "PO'' or ''PDOUT" (Phase Output) or "EO" (Error Output) by some manufacturers. This is the output which results from comparing RI and FIN. If the two inputs don't match exactly, this circuit sends a DC correction output to the Loop Filter/VCO until the loop corrects itself and locks up.

LD Lock Detector. Sometimes called "LM" (Lock Monitor) by some manufacturers.This is a second output of the Phase Detector which is used to kill the transmitter (and sometimes the receiver) if the loop is not locked and operating correctly. Some chips have more than one Lock Detector pin and thus you'll sometimes see''LD1'' and "LD2" on the specs. When two Lock Detectorg are used, their normal outputs are usually opposite logicstates; i.e., one LD ig normally ''1'' and the other is normally ''0''.This is a convenient design feature which allows the manufacturer some flexibility because he can have a choice ofinhibiting circuits; some work with LOW outputs,some work with HIGH outputs. Some rigg use both LD pins in their circuits. MC Misprogram Code Detector. The same idea as the Lock Detector, this is found in the newer ROM chips. If you try to force an illegal program code on the chip, this pin is activated and will kill the transmitter, receiver, or in some cases, call up Ch.9 or Ch.19 instead. T/R Transmit/Receive switch. This is used to provide the 455 kHz offset for the receiver's second IF stage in dual-conversion AM or FM rigs. Pressing the mike button changes this pin's logic state to its opposite state from the RX Mode.This shifts the ROM controlling the Programmable Divider, and in some chips also shifts the output of the Reference Divider from standard 5 kHz steps to 2.5 kHz steps. The T/R shift is the reason you`ll see two different sets of N-Codes and VCO frequencies in a rig' s service manual. NOTE: Some manufacturers' chip spec sheets show a bar (-) above some pin functions, such as LM, T/R, etc. This bar is a digital logic symbol which indicates what state (''1'' or ''0'') th'at pin is in when activated. For example, theT/R with the bar notation means that the pin is normally HIGH ("1") in the Receive Mode and normally LOW ("0") in the Transmit Mode. /LM means the Lock Monitor is "active LOW". , i.e., it is normally HIGH but goes LOW if the loop is unlocked. FS Frequency Select. This is a feature of some chips which allows them to synthesize frequencies in either 10 kHz CB steps, or 5 kHz steps. Remember, some older chips such as the PLLO2A were intended for other uses besides CB, such as VHF marine radios, aircraft radios, etc., where 5 kHz channel spacing is common. In addition, this feature often makes it easier to synthesize SSB frequencies as well as AM/FM although the feature hasn't been used much for this. Depending upon whether the chip has an internal pull-up or pull-down resistor here, it is generally connected to produce 10 kHz CB spacings in the older chips. The newer chips having a T/R shift must use the 5 kHz spacing when the T/R pin is also used. IMPORTANT: You can't use this function to get 5 kHz channel spacings, because the Programmable divider must also change to match the spacing. AI and AO Active Loop Filter Amplifier input and output. This circuit if present is used to smooth out the digital waveform coming from the Phase Detector, before it's applied to the VCO (See text.) This filter is found in the newer CB-only chips. The older chips (Eg, PLL02A) require external passive filters using capacitors and resistors. In many rigs you'll find that these pins are connected either directly or through a resistor so that they are placed in series betw een the Phase Detector output pin and the VCO input. FIL Active filter. W e're using this designation in certain very old chips when the exact spec sheets are not available but it's known from studying the chip's wiring in the rig that the pins are in fact part of a loop filter.

T and Q This is a wave-shaping circuit found in a few NEC chips (uPD2810, uPD2814, uPD2816, and uPD2824). It adds design flexibility but is often not even connected. This circuit consistsofan input amplifier and a ''flip-flop'', and its purposeis to change asine-wave input (T) to a square-wave output (Q) which is more compatible with digital electronic circuits. P0 ..... P10 Program Select pins from Channel Selector switch. (Sometimes called "D" for ''Data'' rather than "P" for ''Program''.) These pins control the actual channel selection. They may control selection through straight binary coding, BCD, or ROM. The sub-numbers indicate the weight or significance of each pin. For example if there were 8 programming pins, P1 to P8, P1 would be in the "least significant bit" and P8 would bethe "most significant bit".The higher the sub-number, the greater the weight of that pin. NC No Connection. An unused pin May actually be disconnected inside the chip, or simply not used for that particular rig' s PLL circuit.

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AN6821N Frequency Divider Divided by 20

Pin 1 2 3 4 5 6 7 8 9

Name O VCC I NC GND Output - Divided by 20 Positive Supply Voltage - 5 Volt Input No Connection Ground Filter (!,5nF Capasitor) Filter (!,5nF Capasitor) Filter (!,5nF Capasitor) Ground

Description

GND

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uPC1028H FM IF Amplifier and Discriminator


Similar to TA7130P LA1150 KA2245 KIA7130and BA403

3 stage differential IF amplifier. Differential peak detector. Easy adjustment. Large output voltage. Good limiter characteristic. Wide operating voltage. Low distortion. Fewer peripheral parts. Excellent AM rejection ratio. Pin 1 2 3 4 5 6 7 Name Balanced Input Balanced Input Positive Power Supply Ground + Detector input - Detector input Audio Output Description

Vcc GND

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KA22495 RF Front End Amplifier, Mixer and IF-Amplifier


Similar to AN7205 KA6058 KIA6058 LA1185 and TA7358AP
Overview The LA1185 is an FM receiver front-end IC. Its mixer is of double-balanced type. The built-in oscillator and buffer amplifier improves the strong input characteristic. Functions and Features . RF amplifier, mixer, local oscillator . Improvement in cross modulation characteristics due to the use of double-balanced mixer. . Improvement in strong input characteristic. . Minimum number of external parts required. . Less spurious radiation from local oscillator. . Operating voltage range : 1.5 to 8.0 V

Pin 1 2 3 4 5

Name RF Input Bypass RF Output Mixer Input Ground

Description

GND

6 7 8 9

Vcc

Mixer Output Oscillator Monitor Oscillator Input Positive Power Supply

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TA7060AP Balanced RF/IF Amplifier


BA401 SK3225 TM1104 KT615

Pin 1 2 3 4 5

Name Input Input Ground Output Positive Supply Voltage

Description

Vcc

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BA521 Audio Power Amplifier


SK1166 SK3827 REN1165

5 Watt Audio Power Amplifier


Pin 1 2 3 4 5 6 7 8 9 10 OP GND BP BP IP RC BP BP FB Vcc Name Audio Output Ground ByPass ByPass Audio Input RC Network ByPass ByPass FeedBack positive Supply Voltage Description

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CA3012 FM IF Wideband Amplifier

The CA3012 is an FM IF wideband amplifier with 3 limiter gain stages in a bipolar monolithic technology. The pin 1 input is an open base and has a separate feedback bias. The feedback bias pin, DC FB BYPASS, is externally bypassed and provides the means for a tuned coil input to the IF IN pin. The output is a high impedance open collector which may be matched to a tuned transformer, driving an FM detector. Internal regulation circuits provide DC bias to the gain stages and DC feedback circuit. The CA3012 is intended for FM limiting applications requiring high gain. Features: Exceptionally High Amplifier Gain - Power Gain at 4.5MHz . . . . . . . . . . . . . . .75dB Excellent Input Limiting Characteristics - Limiting Voltage at 10.7MHz . . . . . 600mV Wide Frequency Capability - Bandwidth . . . . . . . . . . . . . . . . . . . .100kHz to 20MHz Applications: FM IF Amplifiers FM Communication Receivers TV IF Amplifiers Pin 1 2 3 Name Input DC Input (Ref.) DC Feedback, Bypass Description

4 5 6 7 8 9 10 NC NC GND NC Vcc

Ref. Bias Output No Connection No Connection GND No Connection Vcc

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LM3028 RF Amplifier
Similar to TA7045 CA3028 and CA3053

The CA3028A and CA3028B integrated circuits are single-stage differential amplifiers. Each circuit also contains a constant-current transistor and suitable biasing resistors. The circuits are primarily intended for service in communications systems operating at frequencies up to 120MHz with single power supplies. This Note provides technical data and recom-mended circuits for use of the CA3028A and CA3028B in the following applications: RF Amplifier Autodyne Converter IF Amplifier Limiter
Pin 1 2 3 Name Input High I Source Substrate Description

4 5 6 7 8

I Source Em. Input Low Output High AGC (AutomaticGainControl) Output Low

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CX7925B Serial Input PLL Frequency Synthesizer and Programmable divider

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 CL E D RI RO

Name Clock Enable Data Reference Frequency Input Reference Frequency Output VCO Voltage Out Programmable counter output Programmable divider output

Description

PD PCO PDO FIN Vcc GND

Positive Supply Voltage Ground

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MC1352P SN76650P HA1139 M5183P uPC1355C TDA1352 Video Amplifier

The MC1352 is an integrated circuit for use as an IF amplifier in radio and TV over an operating temperature range of 0 to +75C. Power Gain: 50 dB Typ at 45 MHZ Power Gain: 50 dB Typ at 58 MHZ Built in Keyed AGC-amplifier 12 V Operation, SinglePolarity Power Supply Pin 1 2 3 4 5 6 Name Description Output Positive Supply Voltage - Max. 18 Volt Ground Input Keyed AGC Input Input +

7 8

Ground Output

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HA11225 uPC1167C2 M51173P FM IF-Amplifier and Discriminator

FM IF Amplifier and Demodulator with Muting, Center Meter and Signal Meter Features: Low Distortion High Signal-to-Noise Ratio High Limiting Sensitivity Large Muting Attenuation Provides Specific Signal for Direct Drive of a Signal Meter with Good Linearity Muting Level is variable by Adjusting the External Resistor High Stability Against Abnormal Oscillation Applications: FM IF Amplifier Quadrature Detector Audio Amplifier Muting Circuit AFC, Tuning Meter Driver AGC Control Voltage Generator Muting Control Voltage Generator Signal Meter Driver

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Name IF Input AM/FM Switch Bypass Ground Mute Input Audio Output AFC Output Quad Detector Detector Coil Detector Coil Positive Supply Voltage Mute Output Meter Driver Ground RF AGC Mute Adjust

Description

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HD10551 Programmable Divider

Pin 1 2 3 4 5 6 7 8

Name

Description

Output

Input

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PD861C HD42851 uPD2814C PLL Integrated Circuits

Programmable Divider - Divide by 3 to 255 10-Bit Divider Phase Detector Reference Oscillator Circuit On-Chip Filter Amplifier Code Converter Only Two or Three Crystals Required for CD Radio AM Frequency Selection Unlocked Signals are Detected at Instant Stop "IS" Terminal Two Type Program Mode can be Selected to Change Input Mode Level: M: Low Level - Binary Code Input Enables, Divided by 3 to 255 M: High Level - BCD Code Enables that the Data at P1 to P6 Port is Offset 90 by Code Converter Internal Active Filter Amplifier has a Long Holding Time due to Very High Input Impedance Characteristics of the CMOS - this is to Obtain Very Good Spurious Response Output Signal of the "I" can be Used to Stop the Spurious Radiation when the Channel Selector Makes Misprogramming such as Rotary Switch's Lose Contact High Speed and Low Power Consumption due to CMOS Single Power Supply and Fully TTL Compatible: VDD = 5V 0.5V

Operating Temperature: TA = -30 to +65C Pull Down Resistors Installed in Program and Mode Switch Inputs Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Name P1 P2 P3 P4 P5 P6 P7 P8 1/2R RI RO VDD FIN MS PDO LDI RDO LDI AO AI PDI PD out GND I Decription Binary programable input 1 Binary programable input 2 Binary programable input 3 Binary programable input 4 Binary programable input 5 Binary programable input 6 Binary programable input 7 Binary programable input 8 Referency frequency divided by 2 Referency oscillator Input (X-tal) Refeerency oscillator Output (X-tal) Positive Power Supply (+5Volt) VCO Oscillator Input Mode Select - HIGH=40 Channels BDC/ROM LOW=Binary input (N=3-255) Programable Divider Output Loop Detector Input (from Reference Divider) Reference Divider Output Loop Detector Input (from Programmable Divider) Loop filter Amplifier Output Loop filter Amplifier Input Programable Divider Input Phase Detector output Ground Inhibit

Explanation of pin function terms

PD2814 PD2816 HD42853 KM5624 PLL Integrated Circuits

Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 6 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory to 40 channels CEPT.

Down-converting of the frequency to the divider

This PLL Circuit use a Mixer and a X-Tal Oscillator to convert the output frequency f OUT to the f IN to the PLL Circuit. The X-Tal frequency is f XTAL = f OUT - f IN

The output frequency can be changed by changing the mixing-xtal or add a new mixing-xtal to the oscillator.

Pin Name 1 P1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 P2 P3 P4 P5 P6 T Q T/R 1/2R VDD RO RI RB LD VDD PD

Decription Binary programable input 1 Binary programable input 2 Binary programable input 3 Binary programable input 4 Binary programable input 5 Binary programable input 6 Divided by 2 input Divided by 2 output Transmit=LOW Receive=HIGH Referency frequency divided by 2 Positive Power Supply (+5Volt) Referency oscillator Output (X-tal) Referency oscillator Input (X-tal) Reference Oscillator Output (Buffered) Loop Detector output Positive Power Supply (+5Volt) Phase Detector output

18 19 20 21 22

AI AO FS GND FIN

Loop filter Amplifier Input Loop filter Amplifier Output Function Select - HIGH=10kHz step LOW=5kHz step Ground VCO Oscillator Input

Explanation of pin function terms

ROM Code Table


Channel 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 P6 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 P5 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 0 P4 0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 0 1 1 0 P3 0 0 0 1 1 1 1 0 0 0 0 0 0 1 1 1 1 0 0 0 P2 0 1 1 0 0 1 1 0 0 0 0 1 1 0 0 1 1 0 0 0 P1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0

21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40

1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0

0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 0

0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 0 1 1 0

0 0 0 1 1 1 1 0 0 0 0 0 0 1 1 1 1 0 0 0

0 1 1 0 0 1 1 0 0 0 0 1 1 0 0 1 1 0 0 0

1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0

HD404829FS Hitachi MCU


Pins marked with bold is alternativ function for the MCU. Pin I/O Symbol 1 2 3 4 5 6 7 8 9 NUMO NUMG AVcc AN0 AN1 AN2 AN3 AVss TEST OSC 1 OSC 2 RESET X1 X2 GND Function Non-user pin. Do not connect it to any lines Non-user pin. Connect it to GND Power pin for A/D converter Analog input pin for A/D converter Analog input pin for A/D converter Analog input pin for A/D converter Analog input pin for A/D converter Ground pin for A/D converter Used for factory testing only. Connect this pin to Vcc Input pin for the internal oscillator circuit Output pin for the internal oscillator circuit Reset the MCU Used for a 32.768 kHz crystal for clock purposes Used for a 32.768 kHz crystal for clock purposes Connected to ground Input/output pin adressed by individual bits. Not connected Not connected + 5 Volt Not connected Meter level input (RF/SWR/S/MOD) Channel UP/DOWN from Mic. Not connected 0 Volt President George

I I I I I I

10 I 11 O 12 I 13 I 14 O 15

Not connected Not connected 0 Volt TX/RX switch in

16 I/O D0

Input/output pin adressed by individual bits. Input/output pin adressed by 18 I/O D2 individual bits. Input/output pin adressed by 19 I/O D3 individual bits. Input/output pin adressed by 20 I/O D4 individual bits. Input/output pin adressed by 21 I/O D5 individual bits. Input/output pin adressed by 22 I/O D6 individual bits. Input/output pin adressed by 23 I/O D7 individual bits. Input/output pin adressed by 24 I/O D8 individual bits. Input/output pin adressed by 25 I/O D9 individual bits. 26 I D10 Input pin adressed by individual bits. Input pin for transition from stop 26 I STOPC mode to active mode 27 I D11 Input pin adressed by individual bits. 27 I INT0 Input pin for external interrupts Input/output pin adressable by 28 I/O R0-0 individual bits 28 I INT1 Input pin for external interrupts Input/output pin adressable by 29 I/O R0-1 individual bits 29 I INT2 Input pin for external interrupts Input/output pin adressable by 30 I/O R0-2 individual bits 30 I INT3 Input pin for external interrupts Input/output pin adressable by 31 I/O R0-3 individual bits 31 I INT4 Input pin for external interrupts Input/output pin adressable by 32 I/O R1-0 individual bits 32 O TOB Timer output pin 17 I/O D1

Not connected Not connected Not connected Not connected Not connected Keyboard strobe input Keyboard strobe input Keyboard strobe input Keyboard strobe input Mode SW: 1=Defalt 0=CEPT

Stop

Mode select: 0=Defalt 1=Allways Internationell

Channel UP from rotary knob

Channel DOWN from rotary knob

BEEP output

Input/output pin adressable by individual bits 33 O TOC Timer output pin Input/output pin adressable by 34 I/O R1-2 individual bits 34 O TOD Timer output pin Input/output pin adressable by 35 I/O R1-3 individual bits 35 I EVNB Event count input pin Input/output pin adressable by 36 I/O R2-0 individual bits 36 I EVND Event count input pin Input/output pin adressable by 37 I/O R2-1 individual bits Serial interface clock input/output 37 I/O SCK pin Input/output pin adressable by 38 I/O R2-2 individual bits Serial interface receive data input 38 I SI pin Input/output pin adressable by 39 I/O R2-3 individual bits Serial interface transmit data output 39 O SO pin Input/output pin adressable by 40 I/O R3-0 individual bits Input/output pin adressable by 41 I/O R3-1 individual bits Input/output pin adressable by 42 I/O R3-2 individual bits Input/output pin adressable by 43 I/O R3-3 individual bits Input/output pin adressable by 44 I/O R4-0 individual bits Input/output pin adressable by 45 I/O R4-1 individual bits Input/output pin adressable by 46 I/O R4-2 individual bits 33 I/O R1-1

GREEN lamp

ORANGE lamp

Not connected Not connected Serial data output to EEPROM

Serial data input from EEPROM

Chip select to EEPROM

Clock to EEPROM

Keyboard strobe output Keyboard strobe output Keyboard strobe output Keyboard strobe output

Not connected

47 I/O R4-3 48 I/O R5-0 49 I/O R5-1 50 I/O R5-2 51 I/O R5-3 52 I/O R6-0 53 I/O R6-1 54 I/O R6-2 55 I/O R6-3 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 O O O O O O O O O O O O O O O O O O O SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG

Input/output pin adressable by individual bits Input/output pin adressable by individual bits Input/output pin adressable by individual bits Input/output pin adressable by individual bits Input/output pin adressable by individual bits Input/output pin adressable by individual bits Input/output pin adressable by individual bits Input/output pin adressable by individual bits Input/output pin adressable by individual bits Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD

Not connected Clock to PLL Data to PLL Chip select to PLL TX/RX output to analogboard Sqelsch input POWER switch (ON/OFF) High/Low power output Not connected Not connected Not connected Not connected Seg. 1 Seg. 2 Seg. 3 Seg. 4 Seg. 5 Seg. 6 Seg. 7 Seg. 8 Seg. 9 Seg. 10 Seg. 11 Seg. 12 Seg. 13 Seg. 14 Seg. 15 Seg. 16

75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100

O O O O O O O O O O O O O O O O O O O O O

SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG SEG COM1 COM2 COM3 COM4 V1 V2 V3 Vcc

Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD

Seg. 17 Seg. 18 Seg. 19 Seg. 20 Seg. 21 Seg. 22 Seg. 23 Seg. 24 Seg. 25 Seg. 26 Seg. 27 Seg. 28 Seg. 29 Seg. 30 Seg. 31 Seg. 32 Seg. 33 Com.1 Com. 2 Com. 3 Not connected Not connected Not connected + 5 Volt Not connected

Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Segment signal pin for LCD Common signal pin for LCD Common signal pin for LCD Common signal pin for LCD Common signal pin for LCD Power pin for LCD driver. Power pin for LCD driver. Power pin for LCD driver. Applies power voltage Non-user pin. Do not connect it to NUMO any lines

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IR3N06 Low Power Narrowband FM IF


IR3N06 is similar to MC3361, MC3371, MC3372, MC3357, LM3361, KT3361, KA3361 and NJM3357

The IR3N06 is a low power narrow band FM detector integrated circuit for FM dual conversion of communication equipment. The IR3N06 includes oscillator, limiting amplifier, AFC circuit, quadrature detect, operational amplifier, squelch circuit, scan-control and muting switch. Vcc GND Pin 1 2 3 4 5 6 7 8 Name Crystal oscillator (10.245MHz) Crystal oscillator (10.245MHz) Mixer output to Filter (455kHz) Positive Supply Voltage Limiter input Decoupling Limiter output Quadrature Coil input Description

9 10 11 12 13 14 15 16

Demodulator output IF Filter input IF Filter output Squelch input Scan Control Audio Mute Ground RF / MF input (10.7MHz)

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KIA6003S FM IF-Amplifier and Discriminator

Pin 1 2 3 4 5 6 7 8 9

Name

Description

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KIA6040P FM IF-Amplifier and Discriminator

Pin 1 2 3 4 5 6 7 8 9 10 11 12

Name

Description

13 14 15 16

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KM7217AP / KIA7217AP / TA7205P Audio Power Amplifier

5,8 Watt Audio Power Amplifier


Pin 1 2 3 4 5 6 7 8 9 10 Vcc DC PC PC NF PC GND Name Supply Voltage BootStrap DeCoupling Phase Compensation Phase Compensation Input Phase Compensation Ground Output Description

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KS8805 Serial Input PLL Frequency Synthesizer

INTRODUCTION: The KS8805B is a superior low power-programmable dual frequency synthesizer (PLL) which can be used in high performance CT-1 cord-less phone system with frequency range under 60 MHz in all over the world. This device has two independent phase detectors and channel divider block for transmitter and receiver part. It includes reference divider and auxiliary reference divider to generate independent reference frequency using a common reference oscillator. If required, all divider blocks can be fully programmed through MICOM serial interface. FEATURES: Operating voltage range : 3.0 ~ 5.5V

Superior supply current : 2.5mA (Typ) at 3.0V Included power saving mode function which can control the each register block according to program data of MICOM Included clock output with frequency of X-tal OSC 3 / 4 for MICOM or other system and clock output on / off control by MICOM Superior Max operating frequency range : 60MHz at 300 mVp-p, VDD = 3.0V Internal reference oscillator can support the external X-tal which oscillates up to 16MHz Built - in Lock detect signal output Internal reference divider range : 16 ~ 4095 Internal Auxiliary reference divider range : 16 ~ 16383 Internal RX (TX) divider range : 16 ~ 65535 Pin Name 1 CLK Clock from CPU 2 AUX DI 3 4 Data ST Description

Data from CPU Strobe from CPU Clock output terminal. This output pin provides the clock source for Micom or other system as an output of X 5 fMCU tal OSC 3 / 4. Which can be controlled by the bit of the control register. Clock output on / off control is possible by MICOM. 6 GND Ground 7 RI X-tal Oscillator Input 8 RO X-tal Oscillator Output Input terminal of RX channel counter. Usually, AC coupled output signal of VCO loop 9 RIF is introduced and the Minimum input signal level is 300mVp-p at 60 MHz There are 3 - kind output signal states in PDR pin. - If fRX > fREF (fRX is leading), the output is negative pulse state 10 PDR - If fRX < fREF (fRX is lagging), the output is positive pulse state - If fRX = fREF (the same phase), the output is high impedance state This output terminal offers the state of internal RX channel counter operation. If this pin 11 PWDRX state is high, internal RX channel counter is operating in power saving mode. So, this pin can be used in appling the power switch on / off control. 12 VDD Power supply input terminal 13 PWDTX 14 TIF If this pin state is high, internal TX channel counter is operating in power saving mode. So, this pin can be used in appling the power switch on / off control. Usually, AC coupled output signal of VCO loop is introduced and the Minimum input signal level is 300mVp-p at 60 MHz

15 PDT

16 LDT

There are 3 - kind output signal states in PDT pin. - If fTX > fREF (fTX is leading), the output is negative pulse state - If fTX < fREF (fTX is lagging), the output is positive pulse state - If fTX = fREF (the same phase), the output is high impedance state Output terminal of lock detection waveforms This output pin is internally connected with TX - loop. High output state in LDT pin indicates out of internal operation.

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LA1178M Balanced RF Amplifier Mixer and Oscillator

Functions: Double end type mixer Oscillator Oscillator buffer Wide-band AGC circuit IF amplifier Features: Excellent intermodulation characteristic (wide-band AGC circuit) On-chip local oscillation buffer for electronic tuning.

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LA1231N FM IF-Amplifier and Discriminator

Function: IF Amplification, Limiter Quadrature Detector AF Preamplifier Muting at Weak Input Muting at the Detuning Signal Meter Drive Output AFC Tuning Meter Drive Output Delay AGC Output Inverting Circuit for Muting Drive Voltage IF Amplifier Stop Circuit Features: High Limiting Sensitivity: 18V Typ. Low Dostortion: 0.05% Typ. Determined by the Linearity of Phase Characteristics in Phase Shifting Circuit High Demodulation Output: 330mVrms Typ. High S/N ratio: 78.5dB Typ. Muting at Detuning with Little Shock Noise

Single Meter Drive Output Proportional with the Input Signal Level dB Detuning Muting Band having Good Symmetrics Tuning Meter Driving Output having Wide Swing Width Delay AGC Drivce Output for Front End Constant Voltage Circuit is Built-In: Operating Voltage range = 9V to 14V Muting Characteristics between Adjacent Stations are Distinguished Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Name Front End Front End Front End Ground Mute Switch AF Output AF C/V ref. Detector trans. Detector Trans. Detector Trans. Positive Supply Voltage Mute Switch Signal Meter Ground AGC Mute Level Adjust Description

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LA4201 Audio Power Amplifier


LA4201 is similar to SK7799

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Vcc

Name Positive Supply Voltage Boostrap Filter Ripple

Description

Decoupling

Audio Input

GND

Ground Audio Output

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LA4260 Power Amlifier

2 x 2,5 Watt in two-channel


Pin 1 2 3 4 5 6 7 8 9 10 Name Feedback 1 Input 1 Decoupling Ground Input 2 Feedback 2 Output 2 Ground Positive Supply Voltage Output 1 Description

GND

GND Vcc

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LA4446 STK4241 2x5,5 Watt Power Amlifier

2 x 5,5 Watt in two-channel mode


Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 In2 DC NF2 GND BS2 Out2 VCC Out1 BS1 GND NF1 GND In1 Name Input 2 Description

Ground Output 2 Supply Voltage Output 1 Ground Ground Input 1

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LA4485 Power Amlifier

2 x 5 Watt in two-channel mode 15 Watt in BTL mode (Bridge)


Pin 1 2 3 4 5 6 7 8 9 CH1 IN CH2 IN SS GND BTL IN BTL OUT FILTER LS Vcc SS Vcc STADBY Name Channel 1 input Channel 2 input Small-signal ground BTL-mode feedback input BTL-mode feedback output Filter capacitor connection Large-signal supply Small-signal supply Stanby control input Description

10 11 12 13

MUTE CH2 OUT LS GND CH! OUT

Mute control input Channel 2 output Large-signal ground Channel 1 out

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Dual Operational Amplifiers

The NJM4558S / LA6458S consists of two independent, internally phase compensated operational amplifiers. Application areas include active filters, audio preamplifiers, and various electronic circuits.

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LC5121 PLL Frequency Synthesizer

Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The LC7185-8750 incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. The controller handles the PLL circuitry, frequency data ROM, channel preset/recall RAM, and LED display driver. It also supports channel preset/recall, and emergency channel call. This PLL-circuit use a ROM programmable divide-by-N counter. The ROM-table is programmed from factory. Pin 1 2 3 4 5 6 7 8 9 10 11 12 SA SB SC SD SE SF SG Vss XO XI GND F in Name Display Segment A Display Segment B Display Segment C Display Segment D Display Segment E Display Segment F Display Segment G Ground X-tal Output X-tal Input Ground VCO Frequency Input Description

13 14 15 16 17 18 19 20 21 22

Vcc AO AI DO LD T/R EMG U/D RFST DI

Positive Voltage Supply Loop filter Amplifier Output Loop filter Amplifier Input Phase Detector Output Loop Detected Transmit / Receive Channel 9 Program UP / Program DOWN Display Segment Select output

Explanation of pin function terms

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LC7110 PLL Frequency Synthesizer

Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 9 bit ROM programmable divide-by-N counter to divide from N=150 to N=194. The ROM-table is programmed from factory to 40 channels CEPT. Pin 1 2 3 4 5 6 7 8 9 10 11 Name Vcc F in RB RI RO AO AI PD LD P9 Description Positive Supply Voltage VCO Frequency Input Oscillator Output (\-ered) X-tal Input X-tal Output Connect to Vcc Loop filter Amplifier Output Loop filter Amplifier Input Phase Detector Output Loock Detector - Locked=HIGH Unlocked=LOW Programmable input 9

12 13 14 15 16 17 18 19 20

P8 P7 P6 P5 P4 P3 P2 P1 GND

Programmable input 8 Programmable input 7 Programmable input 6 Programmable input 5 Programmable input 4 Programmable input 3 Programmable input 2 Programmable input 1 Ground

Explanation of pin function terms

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LC7113 PLL Frequency Synthesizer


Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 6 bit BCD binary programmable divide-by-N counter. N-codes are 64+N or 128+N.

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Name Vcc F in 1/2R RI RO FS PD LD P7 P6 P5 P4 P3 P2 P1

Description Positive Supply Voltage VCO Frequence Input Reference oscillator output divided by 2 X-tal Input X-tal Output Function Select - HIGH=Divided by 1024 LOW=Divided by 1152 Phase Detector Output Loock Detector - Locked=HIGH Unlocked=LOW Programmable input 7 HIGH=N-codes is 64+N LOW=N-codes is 128+N Programmable input 6 Programmable input 5 Programmable input 4 Programmable input 3 Programmable input 2 Programmable input 1

16

GND

Ground

Explanation of pin function terms

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LC7120 PLL Frequency Synthesizer

Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 6 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory. Pin 1 2 3 4 5 6 7 8 9 10 11 Name P1 P2 P3 P4 P5 P6 IFS T/R Vcc RI RO Description Programmable input 1 Programmable input 2 Programmable input 3 Programmable input 4 Programmable input 5 Programmable input 6 IF Select - HIGH=10.695MHz LOW=9.785MHz Transmit=LOW Receive=HIGH Positive Supply Voltage X-tal Input X-tal Output

12 13 14 15 16 17 18 19 20

RB 1/2R F in LD2 LD1 PD AI AO GND

Oscillator Output (Buffered) Referency oscillator output divided by 2 VCO Frequency Input Loock Detector 2 Loock Detector 1 Phase Detector Output Loop filter Amplifier Input Loop filter Amplifier Output Ground

Explanation of pin function terms

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LC7130, LC7131, LC7135, LC7136 and LC7137 PLL Frequency Synthesizer

Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 6 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory. Pin 1 2 3 4 5 6 7 8 9 10 11 12 Name P1 P2 P3 P4 P5 P6 Test CH19 CH9 MC RI RO Description Programmable input 1 Programmable input 2 Programmable input 3 Programmable input 4 Programmable input 5 Programmable input 6 Connect to GND Called channel 19 when pins are HIGH Called channel 9 when pins are HIGH X-tal Input X-tal Output

13 14 15 16 17 18 19 20

GND LD PD AI AO Vcc F in T/R

Ground Locked=HIGH Unlocked=LOW Phase Detector Output Loop filter Amplifier Input Loop filter Amplifier Output Positive Supply Voltage VCO Frequency Input Transmit=LOW Receive=HIGH

Explanation of pin function terms

Programming Chart for LC7130/LC7131/LC7132


Channel 1 2 .. 22 .. 40 3254 3256 .... 3306 .... 3342 RX Divided by 3345 3347 .... 3397 .... 3433 TX Divided by

NOTES: 1. 91-count upshift on TX provides 455kHz offset for receiver IF mixing. 2. Reference and Programmable Dividers use 5kHz steps. Example of VCO Determination, Channel 1: 3254 x 5kHz = 16.270MHz (RX-Mode) 3345 x 5kHz = 16.725MHz (TX-Mode)

Programming Chart for LC7136/LC7137


Channel 1 2 3381 3383 RX Divided by 2760 2761 TX Divided by

.. 40

.... 3459

.... 2799

NOTES: 1. Referency and Programmable Dividers use 5kHz steps. 2. TX VCO frequency is doubled to provide direct on-channel frequency. Example of VCO Determination, Channel 1: 3381 x 5kHz = 16.905MHz (RX-Mode) 2760 x 5kHz = 13.800MHz (TX-Mode) (13.800MHz x 2 = 27.600MHz + 1.25kHz tuned offset = 27.60125MHz)

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LC7132 PLL Frequency Synthesizer

Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 8 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory. Pin 1 2 3 4 5 6 7 8 9 10 11 12 P1 P2 P3 P4 P5 P6 P7 P8 CH9 Test RI RO Name Programmable input 1 Programmable input 2 Programmable input 3 Programmable input 4 Programmable input 5 Programmable input 6 Programmable input 7 Programmable input 8 Called channel 9 when pins are HIGH Connect to GND X-tal Input X-tal Output Description

13 14 15 16 17 18 19 20

GND LD PD AI AO Vcc F in T/R

Ground Locked=HIGH Unlocked=LOW Phase Detector Output Loop filter Amplifier Input Loop filter Amplifier Output Positive Supply Voltage VCO Frequency Input Transmit=LOW Receive=HIGH TRUTH TABLE P1 P2 P3 P4 P5 P6 P7 P8 Channel 1 1 1 1 0 1 1 1 1 1 1 0 0 0 1 0 0 0 1 1 1 0 0 0 1 0 0 0 1 1 1 0 0 1 0 0 0 0 0 0 1 0 0 1 0 0 0 0 0 0 1 0 0 0 0 0 0 0 1 0 0 1 1 0 0 0 0 0 1 0 0 1 1 0 0 0 1 1 1 0 1 0 1 0 1 0 1 1 1 0 1 0 1 0 1 0 1 0 0 0 1 1 0 0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

0 0 0 1 0 0 0 1 1 1 0 0 0 1 0 0 0

1 0 0 0 0 0 0 1 0 0 1 0 0 0 0 0 0

0 0 0 1 0 0 1 1 0 0 0 0 0 1 0 0 1

1 1 0 1 0 1 0 1 0 1 1 1 0 1 0 1 0

0 1 1 0 0 0 0 0 0 0 0 1 1 0 0 0 0

1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0

0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1

1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0

24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40

Explanation of pin function terms

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LC7185 PLL Frequency Synthesizer


This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The specifications are suited for use in U.S.A.(FCC). The LC7185-8750 incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. The controller handles the PLL circuitry, frequency data ROM, channel preset/recall RAM, and LED display driver. It also supports channel scan, channel preset/recall, and emergency channel call.

Pin 1 2 SA SB

Name Display Segment a Display Segment b

Description

3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30

SC SD SE SF SG D1 D2 KI1 KI2 KI3 KI4 KO1 KO2 KO3 BEEP UL XOUT XIN Vss2 TEST PIN GND INIT HOLD PD Vss1 NC TX

Display Segment c Display Segment d Display Segment e Display Segment f Display Segment g

Keyboard In 1 Keyboard In 2 Keyboard In 3 Keyboard In 4 Keyboard Out 1 Keyboard Out 2 Keyboard Out 3

X-tal Out X-tal In

Ground

No Connection

Explanation of pin function terms

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LC7232 LC72322 Single-Chip Microcontroller with Built-In LCD Driver and PLL Circuits
Overview The LC7232/LC72322 is a single-chip microcontroller for use in electronic tuning applications. It includes on chip both LCD drivers and a PLL circuit that can operate at up to 150 MHz. It features a large-capacity ROM, a highly efficient instruction set, and powerful hardware. Stack: Eight levels Fast programmable divider General-purpose counters: HCTR for frequency measurement and LCTR for frequency or period measurement LCD driver for displays with up to 56 segments (1/2 duty, 1/2 bias) Program memory (ROM): 4 k words by 16 bits Data memory (RAM): 256 4-bit digits All instructions are single-word instructions Cycle time: 2.67 s, 13.33 s, or 40.00 s (option) Unlock FF: 0.55 s detection, 1.1 s detection Timer FF: 1 ms, 5ms, 25ms, 125ms Input ports*: One dedicated key input port and one high-breakdown voltage port Output ports*: Two dedicated key output ports, one high-breakdown voltage open-drain port Two CMOS output ports (of which one can be switched to be used as LCD driver outputs) Seven CMOS output ports (mask option switchable to use as LCD ports) I/O ports*: One switchable between input and output in four-bit units and one switchable between input and output in one-bit units Note: * Each port consists of four bits. Program runaway can be detected and a special address set (Programmable watchdog timer). Voltage detection type reset circuit One 6-bit A/D converter Two 8-bit D/A converters (PWM) One external interrupt Hold mode for RAM backup Sense FF for hot/cold startup determination PLL: 4.5 to 5.5 V CPU: 3.5 to 5.5 V

RAM: 1.3 to 5.5 V 80-pin QIP

SY202
General programming guidance of LC7232 devices with Seung Yong CPU SYSTEM SY202. The processors SYSTEM 202 with label Seung Yong are customized mask-programmed CPU's on base of the LC 72322 CPU from Sanyo. Those in the following specified possibilities apply only to CPU's with the above Seung Yong designation and not to others! Programming are those pin 32, 33, 34, 35 of the CPU. The indicated bridges must be manufactured from the links indicated in each case to +5 Volt or GND. Consider please: With 120 to 400 channel programming must be in the device absolutely the EMG/CH 9-Taste wired, because this becomes with many channel operation automatically the BAND selection button!

SY202 Block Diagram

SY203
General programming guidance of LC7232 devices with Seung Yong CPU SYSTEM SY203. The processors SYSTEM 202 with label Seung Yong are customized mask-programmed CPU's on base of the LC 7232 CPU from Sanyo. Those in the following specified possibilities apply only to CPU's with the above Seung Yong designation and not to others! Programming are those pin 33, 34, 35 of the CPU.

The indicated bridges must be manufactured from the links indicated in each case to +5 Volt or GND.

SY203 Block Diagram

SY204
General programming guidance of LC7232 devices with Seung Yong CPU SYSTEM SY204. The processors SYSTEM 204 with label Seung Yong are customized mask-programmed CPU's on base of the LC 72322 CPU from Sanyo. Those in the following specified possibilities apply only to CPU's with the above Seung Yong designation and not to others!

SY204 Block Diagram

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LM386 Audio Power Amplifier


Similar to NJM386

Low Voltage Audio Power Amplifier


Pin 1 2 3 4 5 6 7 8 Name Gain set Inverting Input Non Inverting Input Ground Output Positive Voltage Input Bypass Gain set Description

GND Vcc

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NE592 LM733 Video Amplifier

General Description The LM733/LM733C is a two-stage, differential input, differential output, wide-band video amplifier. The use of internal series-shunt feedback gives wide bandwidth with low phase distortion and high gain stability. Emitter-follower outputs provide a high current drive, low impedance capability. Its 120 MHz bandwidth and selectable gains of 10, 100 and 400, without need for frequency compensation, make it a very useful circuit for memory element drivers, pulse amplifiers, and wide band linear gain stages. Features: 120 MHz bandwidth 250 kohm input resistance Selectable gains of 10, 100, 400 No frequency compensation High common mode rejection ratio at high frequencies Applications: Magnetic tape systems Disk file memories Thin and thick film memories Woven and plated wire memories Wide band video amplifiers

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14

NE592N8 Input Gain Select GND Output Output Vcc Gain Select Input

NE592N14 Input NC Gain Select 2 Gain Select 1 GND NC Output Output NC Vcc Gain Select 1 Gain Select 2 NC Output

LM733 Input Input Gain Select 2 Gain Select 1 GND Output Output Vcc Gain Select 1 Gain Select 2

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MC1496P Balanced Modulator / Demodulator


Similar to LM1396 LM1496 LM1596 uA796 N5596 NJM1496 and SN76514

The MC1496P are doubled balanced modulator-de-modulators which produce an output voltage proportional tothe product of an input (signal) voltage and a switching (carrier) signal. Typical applications include suppressed carrier modulation, amplitude modulation, synchronous detection, FM or PM detection, broadband frequency doubling and chopping.

- Excellent carrier suppression 65 dB typical at 0.5 MHz 50 dB typical at 10 MHz - Adjustable gain and signal handling - Fully balanced inputs and outputs - Low offset and drift - Wide frequency response up to 100 MHz Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 1 2 3 4 5 6 7 8 9 10 Pin SI+ GA GA SIB O+ NC CI+ NC CINC ONC GND Name Signal input + Gain Adjust Gain Adjust Signal input Bias Output + No Connection Carrier In + No Connection Carrier In No Connection Output No Connection Ground Description

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LM2111M ULN2111N SN76643N MC1357P FM IF-Amplifier and Discriminator

Pin 1 2 3 4 5 6 7 8 9 10 11

Name Audio Output Detector Input Ref. No Connection IF Input Decoupling IF Input Ref. Ground No Connection Amplifier Low Output Amplifier Output Test

Description

12 13 14

Detector Input Positive Supply Voltage De-Emphasis

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LM2113M ULN2113N SN76642N FM IF-Amplifier and Discriminator

Description: The LM2113N is a monolithic integrated circuit in a 14-Lead DIP type package providing a multi-stage wideband amplifier/limiter, an FM quadrature detector, and an emmitter-follower audio output stage and is designed for use in FM receivers or in sound IF of TV receivers. Features: Good Sensitivity Excellent AM Rejection Low Harmonic Distortion Single-Adjustment Timing High Gain to 50MHz 500mV Recovered Audio at 10.7MHz Wide Operating Voltage Range Pin 1 2 Name Detector Output Reference Description

3 4 5 6 7 8 9 10 11 12 13 14

No Connection IF Input Decoupling IF Input Ref. Ground No Connection Amplifier Low Output Amplifier Output Test Detector Input Positive Supply Voltage De-Emphasis

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LM3189 FM IF

LM3189 FM IF System General Description: The LM3189N is a monolithic integrated circuit that provides all the functions of a comprehensive FM IF system. The block diagram of the LM3189N includes a three stage FM IF amplifier/limiter configuration with level detectors for each stage, a doubly balanced quadrature FM detector and an audio amplifier that features the optional use of a muting (squelch) circuit. The advanced circuit design of the IF system includes desirable deluxe features such as programmable delayed AGC for the RF tuner, an AFC drive circuit, and an output signal to drive a tuning meter and/or provide stereo switching logic. In addition, internal power supply regulators maintain a nearly constant current drain over the voltage supply range of a8.5V to a16V. The LM3189N is ideal for high fidelity operation. Distortion in an LM3189N FM IF system is primarily a function of the phase linearity characteristic of the outboard detector coil. The LM3189N has all the features of the LM3089N plus additions. Features: Exceptional limiting sensitivity: 12 mV typ at b3 dB point Low distortion: 0.1% typ (with double-tuned coil) Single-coil tuning capability Improved (S a N)/N ratio Externally programmable recovered audio level

Provides specific signal for control of inter-channel muting (squelch) Provides specific signal for direct drive of a tuning meter On channel step for search control Provides programmable AGC voltage for RF amplifier Provides a specific circuit for flexible audio output Internal supply voltage regulators Externally programmable ON channel step width, and deviation at which muting occurs Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Vcc Name IF Input IF In Bypass IF In Bypass Frame Mute Control Audio Output AFC Output IF Output Quad Input Ref Bias Positive Supply Voltage Mute Logic Tune Meter Ground Delayed AGC AGC Description

GND

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LMX2216
0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer for RF Personal Communications

General Description The LMX2216 is a monolithic, integrated low noise amplifier (LNA) and mixer suitable as a first stage amplifier and downconverter for RF receiver applications. The wideband operating capabilities of the LMX2216 allow it to function over frequencies from 0.1 GHz to 2.0 GHz. It is fabricated using National Semiconductor's ABiC IV BiCMOS process. All input and output ports of the LMX2216 are single-ended. The LNA input and output ports are designed to interface to a 50Xsystem. The Mixer input ports are matched to 50X. The output port is matched to 200X. The only external components required are DC blocking capacitors. The balanced architecture of the LMX2216 maintains consistent operating parameters from unit to unit, since it is implemented in a monolithic device. This consistency provides manufacturers a significant advantage

since tuning procedures often needed with discrete designscan be reduced or eliminated. The low noise amplifier produces very flat gain over the entire operating range. The doubly-balanced, Gilbert-cell mixer provides good LO-RF isolation and cancellation of second order distortion products. A power down feature is implemented on the LMX2216 that is especially useful for standby operation common in Time Division Multiple Access (TDMA) and Time Division Duplex (TDD) systems. The LMX2216 is available in a narrow-body 16-pin surface mount plastic package. Features : Wideband RF operation from 0.1 GHz to 2.0 GHz No external biasing components necessary 3V operation LNA input and output ports matched to 50X Mixer input ports matched to 50X, output port matched to 200X. Doubly balanced Gilbert cell mixer (single ended input and output) Low power consumption Power down feature Small outline, plastic surface mount package Applications : Digital European Cordless Telecommunications (DECT) Portable wireless communications (PCS/PCN, cordless) Wireless local area networks (WLANs) Digital cellular telephone systems Other wireless communications systems

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NE565N M51361P General Purpose Phase Lock Loop (PLL)

Description: The NE565N is a general purpose Phase Lock Loop (PLL) in a 14-Lead DIP type package containing a stable, highly linear voltage controlled oscillator (VCO) for low distortion FM demodulation, and a double balanced phase detector with good carrier suppression. The VCO frequency is set with an external resistor and capacitor, and a tuning range of 10:0 can be obtained with the same capacitor. The characteristics of the closed loop systembandwidth, response speed, capture and pull-in range may be adjusted over a wide range with an external resistor and capacitor. The loop may be broken between the VCO and the phase detector for insertion of a digital frequency divider to obtain frequency multiplication. Features: 200ppm/C Frequency Stability of the VCO Power Supply Range of 5V to 12V with 100ppm/% Typical 0.2% Linearity of Demodulated Output Linear Triangle Wave with in Phase Zero Crossings Available TTL and DTL Compatible Phase Detector Input and Square Wave Output Adjustable Hold in Range from 1% to > 60% Applications: Data and Tape Synchronization Modems

FSK Demodulation FM Demodulation Frequency Synthesizer Tone Decoding Frequency Multiplication and Division SCA Demodulators Telemetry Receivers Signal Generators Coherent Demodulators Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Name Negative Supply Voltage Input input VCO Output Phase Comparator VCO Input Reference Voltage VCO Control Voltage Timing Resistor Timing Capacitor Positive Supply Voltage No Connection No Connection No Connection No Connection Description

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M54459L Frequency Divider Divided by 20 Divided by 100

Pin 1 2 3 4 5 6 7 8

Name GND NC MS I DC NC VCC Out

Description Ground No Connection Mode Select - Divide by 20 / Divide by 100 Input Decoupling No Connection Positive Supply Voltage - 5 Volt Output

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M54460L Frequency Divider Divided by 10 Divided by 100

Pin 1 2 3 4 5 6 7 8

Name GND NC MS I DC VCC VREF Out

Description Ground No Connection Mode Select - Divide by 10 / Divide by 100 Input Decoupling Positive Supply Voltage - 5 Volt Output

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M58472P PLL Frequency Synthesizer

Overview
This PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 6 bit BCD binary programmable divide-by-N counter.

Down-converting of the frequency to the divider

This PLL Circuit use a Mixer and a X-Tal Oscillator to convert the output frequency f OUT to the f IN to the PLL Circuit. The X-Tal frequency is f XTAL = f OUT - f IN

The output frequency can be changed by changing the mixing-xtal or add a new mixing-xtal to the oscillator.

Pin Name 1 P4 Programmable input 4 2 P5 Programmable input 5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 P6 F in RI NC LD GND FIL PD NC PS P1 P2 P3 Vcc

Description

Programmable input 6 VCO Frequency Input Referency oscillator Input No Connection Loock Detector Output - Locked=LOW Unlocked=HIGH Connect to GND Ground Phase Detector Output Connect to Vcc No Connection Preset Select - HIGH=147+N LOW=102+N Programmable input 1 Programmable input 2 Programmable input 3 Positive Supply Voltage

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M58473P PLL Frequency Synthesizer

Pin 1 2 3 4 5 6 13 7 9 10 11 12 11 12 15 16 17 18

Name P4 P5 P6 F in RI RO NC LD GND FIL PD2 PD1 P1 P2 P3 Vcc

Description Programmable input 4 Programmable input 5 Programmable input 6 VCO Frequency Input Referency oscillator Input Referency oscillator Output No Connection Loock Detector Output - Locked=LOW Unlocked=HIGH Ground Phase Detector Output 2 Connect to Vcc Phase Detector Output 1 Connect to Vcc Programmable input 1 Programmable input 2 Programmable input 3 Positive Supply Voltage

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M58476 NDC40013 PLL Frequency Synthesizer

Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 6 bit BCD binary programmable divide-by-N counter. Pin 1 2 3 4 5 6 7 8 9 10 11 Name Vcc F in RI MC PD LD P7 P6 P5 P4 Description Positive Supply Voltage VCO Frequency Input Reference Oscillator Input Connect to Vcc Phase Detector Output Loop Detect - Unlocked=LOW Locked=HIGH Programmable input 7 Programmable input 6 Programmable input 5 Programmable input 4

12 13 14 15 16

P3 P2 P1 MS GND

Programmable input 3 Programmable input 2 Programmable input 1 Mode Select - HIGH=10kHz LOW=5kHz Ground

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MB3712 5,7 Watt Audio Power Amplifier

Pin 1 2 3 4 5 6 7 8 9 Vcc GND

Name Output Positive Supply Voltage Ground Input

Description

Vcc

Positive Supply Voltage

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MB3713 5,7 Watt Audio Power Amplifier

Pin 1 2 3 4 5 6 7 8 9 Vcc

Name Output Positive Supply Voltage 16 Volt Boostrap Ground Offset Adjust Input Bypass Input + Positive Supply Voltage

Description

GND

Vcc

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MB8719 MB8734 RCI8719 PLL Synthesizer

Overview
This PLL-circuit use a 6 bit (MB8734 and RCI8719) or 7 bit (MB8719) BCD binary programmable divide-by-N counter.

Down-converting of the frequency to the divider

This PLL Circuit use a Mixer and a X-Tal Oscillator to convert the output frequency f OUT to the f IN to the PLL Circuit. The X-Tal frequency is f XTAL = f OUT - f IN

The output frequency can be changed by changing the mixing-xtal or add a new mixing-xtal to the oscillator.

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Out In Out In CP LD

Name Inverter out Inverter in Inverter out Inverter in Charge Pump Loop Detect

Description

OSC in OSC out VDD P6 P5 P4 P3 P2 P1 P0 F in VSS

Oscillator input Oscillator output Positive Power Supply Programmable inputs (Binary) (Only MB8719) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Frequency input GND Ground TRUTH TABLE P6 0 0 0 0 0 1 P5 0 0 0 0 0 1 P4 0 0 0 0 0 1 P3 0 0 0 0 0 1 P2 0 0 0 0 1 1 P1 0 0 1 1 0 1 P0 Divide by N 0 0 1 1 0 2 1 0 1 3 4 128

Explanation of pin function terms

Uniden AM/FM/SSB Chassis

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TC9109 and MB8733 PLL Frequency Synthesizer

Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 8 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory to 40 channels. Pin 1 2 3 4 5 6 7 8 9 10 11 12 Name Vcc RI CL LD PD AI AO T/R F in P0 P1 P2 Description Positive Supply Voltage Referency Oscillator Input Loop Detect - Unlocked=LOW Locked=HIGH Phase Detector Output Amp. Input Amp. Output Transmit=HIGH Receive=LOW VCO Frequency Input Programmable input 0 Programmable input 1 Programmable input 2

13 14 15 16 17 18

P3 P4 P5 P6 P7 GND

Programmable input 3 Programmable input 4 Programmable input 5 Programmable input 6 Programmable input 7 Ground

Explanation of pin function terms

Programming Chart for TC9106


Channel 1 2 .. 40 3254 3256 .... 3342 RX Divided by 5393 5395 .... 5481 TX Divided by

NOTES: 1. Spesial divided by 2 circuit in TX mode change Referency Divider output to 2.5kHz steps. The 2139 count upshifts produces a 13MHz VCO witch is then doubled for the direct on-channel TX-frequency. Example of VCO Determination, Channel 1: 3254 x 5kHz = 16.270MHz (RX-Mode) 5393 x 2.5kHz = 134825MHz (TX-Mode) (13.4825MHz x 2 = 26.965MHz)

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MB8738 PLL Synthesizer

Overview
This PLL-circuit use a 7 bit BCD binary programmable divide-by-N counter.

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Vcc

Name Positive Supply Voltage Reference Frequency In Reference Frequency Out R Out R Out

Description

F In P P P P P P P

Oscillator Frequency Input Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary)

17 18

P VSS

Programmable inputs (Binary) GND Ground

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MB87014A MB87086A Serial Input PLL Frequency Synthesizer

The MB87014A/MB87086A is a serial data programmable PLL Frequency Syntheseizer. Ratios of reference frequency divider and input frequency divider can be independently set. Pin Name 1 RI Reference X-tal Oscillator Input 2 RO Reference X-tal Oscillator Output 3 4 5 6 7 8 9 10 11 12 13 fv Vcc PD GND LD Fin CL Data EN DOA fr Description

Comparison output Positive Supply Voltage - 5 Volt Phase Detector Output - VCO Voltage Out Ground Loop Detector - Loop Detected=HIGH - Not Detected=LOW VCO Frequency In Clock from CPU Data from CPU Enable from CPU Charge pump output for activ lowpass filter Reference frequency output

14 15 16

NC OV OR

No Connection Phase detector output to differential lowpass filter Phase detector output to differential lowpass filter

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MC1350P SN76600P SC70231P IF / Video Amplifier

The MC1350 is an integrated circuit featuring wide range AGC for use as an IF amplifier in radio and TV over an operating temperature range of 0 to +75C. Power Gain: 50 dB Typ at 45 MHZ Power Gain: 50 dB Typ at 58 MHZ AGC Range: 60 dB Min, DC to 45 MHz Nearly Constant Input & Output Admittance over the Entire AGC Range Y21 Constant ( 3.0 dB) to 90 MHz Low Reverse Transfer Admittance: < < 1.0 mmho Typ 12 V Operation, SinglePolarity Power Supply Pin 1 2 3 4 5 6 7 8 Name Description Output Positive Supply Voltage - Max. 18 Volt Ground Input AGC Input Input + Ground Output

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MC2831 / MC2833 Low Power FM Transmitter System

MC2831 / MC2833 is a one-chip FM transmitter subsystem designed for cordless telephone and FM communication equipment. It includes a microphone amplifier, voltage controlled oscillator and two auxilary transistors.

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MC3359P FM IF-Amplifier and Discriminator


MC3359 is similar to NJM3359

The MC3359 is a low power narrow band FM detector integrated circuit for FM dual conversion of communication equipment. The MC3359 includes oscillator, limiting amplifier, AFC circuit, quadrature detect, operational amplifier, squelch circuit, scan-control and muting switch. The MC3359 is a circuit of MC3357 plus one stage limiting IF amplifier and AFC output terminal. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Name X-Tal Oscillator X-Tal Oscillator Mixer Output Positive Supply Voltage Limiter In Decouple Decouple Quad In Demod Filter Audio Output Demodulated output Filter Input Filter Output Squelch In Scan Control Audio Mute Ground Description

Vcc

GND

18

RF Input

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MC13135/MC13136 FM IF-Amplifier and Discriminator

The MC13135/MC13136 are the second generation of single chip, dual conversion FM communications receivers developed by Motorola. Major improvements in signal handling, RSSI and first oscillator operation have been made. In addition, recovered audio distortion and audio drive have improved. Using Motorolas MOSAICE 1.5 process, these receivers offer low noise, high gain and stability over a wide operating voltage range. Both the MC13135 and MC13136 include a Colpitts oscillator, VCO tuning diode, low noise first and second mixer and LO, high gain limiting IF, and RSSI. The MC13135 is designed for use with an LC quadrature detector and has an uncommitted op amp that can be used either for an RSSI buffer or as a data comparator. The MC13136 can be used with either a ceramic discriminator or an LC quad coil and the op amp is internally connected for a voltage buffered RSSI output.

These devices can be used as standalone VHF receivers or as the lower IF of a triple conversion system. Applications include cordless telephones, short range data links, walkietalkies, low cost land mobile, amateur radio receivers, baby monitors and scanners. Complete Dual Conversion FM Receiver Antenna to Audio Output Input Frequency Range 200 MHz Voltage Buffered RSSI with 70 dB of Usable Range Low Voltage Operation 2.0 to 6.0 Vdc (2 Cell NiCad Supply) Low Current Drain 3.5 mA Typ Low Impedance Audio Output < 25 W VHF Colpitts First LO for Crystal or VCO Operation Isolated Tuning Diode Buffered First LO Output to Drive CMOS PLL Synthesizer

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MC145104 SM5104 MM55104 MN6040A PLL Frequency Synthesizer

Overview
This PLL-circuit use a 8 bit BCD binary programmable divide-by-N counter.

Down-converting of the frequency to the divider

This PLL Circuit use a Mixer and a X-Tal Oscillator to convert the output frequency f OUT to the f IN to the PLL Circuit. The X-Tal frequency is f XTAL = f OUT - f IN

The output frequency can be changed by changing the mixing-xtal or add a new mixing-xtal to the oscillator.

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 18

Name Vcc F in RI RO FS PD LD P7 P6 P5 P4 P3 P2 P1 P1 GND FIL

Description Positive Supply Voltage VCO Frequency Input Referency Oscillator Input Referency Oscillator Output HIGH=10kHz - LOW=5kHz Phase Detector Output Loop Detect - Unlocked=LOW Locked=HIGH Programmable input 7 Programmable input 6 Programmable input 5 Programmable input 4 Programmable input 3 Programmable input 2 Programmable input 1 Programmable input 0 Ground

Explanation of pin function terms

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MC145106 MM55106 MM55116 MM55126 PLL Frequency Synthesizer

Overview
The MC145106 is a phaselocked loop (PLL) frequency synthesizer constructed in CMOS on a single monolithic structure. This synthesizer finds applications in such areas as CB and FM transceivers. The device contains an oscillator/amplifier, a 1024 or 2048 divider chain for the oscillator signal, a programmable divider chain for the input signal, and a phase detector. The MC145106 has circuitry for a 10.24 MHz oscillator or may operate with an external signal. The circuit provides a 5.12 MHz output signal, which can be used for frequency tripling. A 512 programmable divider divides the input signal frequency for channel selection. The inputs to the programmable divider are standard groundtosupply binary signals. Pulldown resistors on these inputs normally set these inputs to ground enabling these programmable inputs to be controlled from a mechanical switch or electronic circuitry. The phase detector may control a VCO and yields a high level signal when input frequency is low, and a low level signal when input frequency is high. An outoflock signal is provided from the onchip lock detector with a 0 level for the outoflock condition. Single Power Supply Wide Supply Range: 4.5 to 12 V Provision for 10.24 MHz Crystal Oscillator 5.12 MHz Output Programmable Division Binary Input Selects up to N=512 OnChip PullDown Resistors on Programmable Divider Inputs Selectable Reference Divider, 1024 or 2048 (Including 2) ThreeState Phase Detector

Down-converting of the frequency to the divider

This PLL Circuit use a Mixer and a X-Tal Oscillator to convert the output frequency f OUT to the f IN to the PLL Circuit. The X-Tal frequency is f XTAL = f OUT - f IN

The output frequency can be changed by changing the mixing-xtal or add a new mixing-xtal to the oscillator.

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14

Name VDD F in OSC in OSC out F out FS D out LD P8 P7 P6 P5 P4 P3

Description Positive Power Supply Frequency input to programmable divider - Max. 3MHz Oscillator input Oscillator output Reference OSC frequency divide by 2 output Reference Oscillator Frequency Division Select. 1=10 kHz, 0=5 kHz Detector output (for control of external VCO) Lock Detector Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary)

15 16 17 18

P2 P1 P0 VSS

Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Ground

Explanation of pin function terms


TRUTH TABLE P8 P7 P6 P5 P4 P3 P2 P1 P0 Divide by N 0 0 0 0 0 0 0 0 0 2 0 0 0 0 0 0 0 0 1 3 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 1 1 1 0 0 1 1 1 1 0 1 1 1 1 0 0 1 1 0 1 1 0 1 0 1 0 1 0 1 1 2 3 4 5 6 7 8 255 511

Uniden AM/FM/SSB Chassis

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MC145107 SM5107 MM55107 PLL Frequency Synthesizer

Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 8 bit BCD binary programmable divide-by-N counter. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 Name Vcc F in RI 1/2 R FS PD LD P7 P6 P5 P4 P3 P2 Description Positive Supply Voltage VCO Frequency Input Referency Oscillator Input Reference OSC frequency divide by 2 output HIGH=10kHz - LOW=5kHz Phase Detector Output Loop Detect - Unlocked=LOW Locked=HIGH Programmable input 7 Programmable input 6 Programmable input 5 Programmable input 4 Programmable input 3 Programmable input 2

14 15 16

P1 P1 GND

Programmable input 1 Programmable input 0 Ground

Explanation of pin function terms

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MC145151 PLL Integrated Circuits

The MC1451512 is programmed by 14 parallelinput data lines for the N counter and three input lines for the R counter. The device features consist of a reference oscillator, selectablereference divider, digitalphase detector, and 14bit programmable dividebyN counter. Operating Temperature Range: 40 to 85C Low Power Consumption Through Use of CMOS Technology 3.0 to 9.0 V Supply Range On or OffChip Reference Oscillator Operation Lock Detect Signal N Counter Output Available Single Modulus/Parallel Programming 8 UserSelectable R Values: 8, 128, 256, 512, 1024, 2048, 2410, 8192

N Range = 3 to 16383 Linearized Digital Phase Detector Enhances Transfer Function Linearity Two Error Signal Options: SingleEnded (ThreeState) or DoubleEnded Chip Complexity: 8000 FETs or 2000 Equivalent Gates Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 FIN GND VDD PDOUT RA0 RA1 RA2 R V f>SUB>V P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 T/R P12 P13 P10 P11 RO RI LD Name Ground V+ (5 Volt) Phase Comparator Output Reference divider Program input 0 Reference divider Program input 1 Reference divider Program input 2 Phase Comparator output Phase Comparator output Program divider output Program input 0 Program input 1 Program input 2 Program input 3 Program input 4 Program input 5 Program input 6 Program input 7 Program input 8 Program input 9 Transmit / Receive Program input 12 Program input 13 Program input 10 Program input 11 Referance Osc. Output Referance Osc. Input Loop Detect Output Decription Frequency input - Max. 30MHz

Explanation of pin function terms

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MC145163 PLL Integrated Circuits

The MC145163 is programmed by 16 parallelinput data lines for the N counter and 2 input lines for the R counter. The device features consist of a reference oscillator, selectablereference divider, digitalphase detector, and 16bit programmable dividebyN counter. On or OffChip Reference Oscillator Operation Lock Detect Signal Single Modulus/Parallel Programming 4 UserSelectable R Values: 512, 1024, 2048, 4096 N Range = 3 to 9999 Pin Name Decription

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28

FIN GND VDD PD RA0 RA1 R V P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 P10 P11 P12 P13 P14 P15 ROUT RI RO L

Frequency input - Max. 30MHz Ground V+ (5 Volt) Phase Comparator Output Reference divider Program input 0 Reference divider Program input 1 Phase Comparator output Phase Comparator output Program input 0 Program input 1 Program input 2 Program input 3 Program input 4 Program input 5 Program input 6 Program input 7 Program input 8 Program input 9 Program input 10 Program input 11 Program input 12 Program input 13 Program input 14 Program input 15 Referance Osc. Output Referance Osc. Input Referance Osc. Output Loop Detect Output

Explanation of pin function terms

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MM55108 PLL Frequency Synthesizer

Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 8 bit BCD binary programmable divide-by-N counter. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Name Vcc F in RI RO 1/2R RB PD LD P8 P7 P6 P5 P4 T/R Description Positive Supply Voltage VCO Frequency Input Reference Oscillator Input Reference Oscillator Output Reference Oscillator Output divide by 2 Reference Oscillator Output (Buffered) Phase Detector Output Loop Detect - Unlocked=LOW Locked=HIGH Programmable input 8 Programmable input 7 Programmable input 6 Programmable input 5 Programmable input 4 Transmit=HIGH - Receive=LOW

15 16 17 18

P3 P2 P1 GND

Programmable input 3 Programmable input 2 Programmable input 1 Ground

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MSC42502P PLL Frequency Synthesizer

Overview
This PLL-circuit use a 8 bit BCD binary programmable divide-by-N counter.

Down-converting of the frequency to the divider

This PLL Circuit use a Mixer and a X-Tal Oscillator to convert the output frequency f OUT to the f IN to the PLL Circuit. The X-Tal frequency is f XTAL = f OUT - f IN

The output frequency can be changed by changing the mixing-xtal or add a new mixing-xtal to the oscillator.

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Name F in P4 P3 P2 P1 NC PD LD GND RI RO P8 P7 P6 P5 Vcc

Description VCO Frequency Input Programmable input 4 Programmable input 3 Programmable input 2 Programmable input 1 No Connection Phase Detector Output Loop Detect - Unlocked=LOW Locked=HIGH Ground Reference Oscillator Input Reference Oscillator Output Programmable input 8 Programmable input 7 Programmable input 6 Programmable input 5 Positive Supply Voltage

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MSM5807 PLL Frequency Synthesizer

Overview
This PLL-circuit use a 8 bit BCD binary programmable divide-by-N counter.

Down-converting of the frequency to the divider

This PLL Circuit use a Mixer and a X-Tal Oscillator to convert the output frequency f OUT to the f IN to the PLL Circuit. The X-Tal frequency is f XTAL = f OUT - f IN

The output frequency can be changed by changing the mixing-xtal or add a new mixing-xtal to the oscillator.

Pin Name 1 P5 Programmable input 5 2 P6 Programmable input 6 3 P7 Programmable input 7 4 5 6 7 8 9 10 11 12 13 14 15 16 P8 FS RI RO GND PD LD F in P1 P2 P3 P4 Vcc

Description

Programmable input 8 Function Select - HIGH=Divided by 512 LOW=Divided by 1024 Reference Oscillator Input Reference Oscillator Output Ground Phase Detector Output Loop Detect - Unlocked=HIGH Locked=HIGH VCO Frequency Input Programmable input 1 Programmable input 2 Programmable input 3 Programmable input 4 Positive Supply Voltage

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MSM5907 PLL Frequency Synthesizer

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 P4 P5 P6 P7 P8

Name Programmable input 4 Programmable input 5 Programmable input 6 Programmable input 7 Programmable input 8

Description

GND

Ground

F in P1 P2 P3 Vcc

VCO Frequency Input Programmable input 1 Programmable input 2 Programmable input 3 Positive Supply Voltage

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MWA110 MWA120 MWA130 Wide-Band RF Amplifier

Frequency Range Gain Operating Current Supply Voltage Output Level Noise Figure

MWA110 0,1-400MHz 14dB 10mA 2,9V -2,5dBm 4dB

MWA120 0,1-400MHz 14dB 25mA 5V 8,2dBm 5,5dB

MWA130 0,1-400MHz 14dB 50mA 5,5V 18dBm 7dB

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NE602 NE612 SA602A SA612A Balanced RF Amplifier and Oscillator

The SA612A is a low-power VHF monolithic double-balanced mixer with on-board oscillator and voltage regulator. It is intended for low cost, low power communication systems with signal frequencies to 500MHz and local oscillator frequencies as high as 200MHz. The mixer is a Gilbert cell multiplier configuration which provides gain of 14dB or more at 45MHz. The oscillator can be configured for a crystal, a tuned tank operation, or as a buffer for an external L.O. Noise figure at 45MHz is typically below 6dB and makes the device well suited for high performance cordless phone/cellular radio. The low power consumption makes the SA612A excellent for battery operated equipment. Networking and other communications products can benefit from very low radiated energy levels within systems. The SA612A is available in an 8-lead dual in-line plastic package and an 8-lead SO (surface mounted miniature package). Pin 1 2 3 4 5 6 7 8 Name Input Input Ground Output Output Oscillator Input Oscillator Output Supply Voltage Description

GND

Vcc

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NE605 NE606 NE616 Low Power Narrowband FM IF with RSSI

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NJM2203 Balanced RF Amplifier, Oscillator and Mixer

The NJM2203 is a low-power VHF monolithic double-balanced mixer with on-board Oscillator and Mixer. It is intended for low cost, low power communication systems with signal frequencies to 200MHz. The oscillator can be configured for a crystal, a tuned tank operation, or as a buffer for an external L.O. Noise figure at 100MHz is typically below 6dB and power gain is typical 24dB.

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NJM2206 Low Power IF/AF PLL Circuit for Narrow Band FM Receiver

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 NC

Name

Description RF Down Converter X-Tal Input RF Down Converter X-Tal Output Mixer Decouple Mixer Output No Connection 2nd IF Decouple 2nd IF Output Squelch Output Squelch Adjust AF Output VCO Decouple VCO Decouple Loop Filter Loop Filter

15 16 17 18 19 20 Vcc GND

VCO Timing Capacitor VCO Timing Capacitor Positive Power Supply Vcc Decouple Ground 1st IF Input

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Quad Operational Amplifire

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Dual Operational Amplifier

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PLL03A PLL08A PLL Frequency Synthesizer

Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 7 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory to 40 channels. Pin 1 2 3 4 5 6 7 8 9 10 Name Vcc RI LD1 LD2 LD3 PD T/R F in P6 P5 Positive Supply Voltage Referency Oscillator Input Description

Phase Detector Output Transmit=HIGH Receive=LOW VCO Frequency Input Programmable input 6 Programmable input 5

11 12 13 14 15 26

P4 P3 P2 P1 P1 GND

Programmable input 4 Programmable input 3 Programmable input 2 Programmable input 1 Programmable input 0 Ground

Explanation of pin function terms

Programming Chart for PLL03A (U.S. - AM) PLL08A (EEC - FM)


Channel 1 2 .. 22 .. 40 1206 1208 .... 1258 .... 1294 RX Divided by 1297 1299 .... 1349 .... 1385 TX Divided by

NOTES: 1. Spesial divided by 2 circuit in TX mode change Referency Divider output to 2.5kHz steps. 2. 91-count upshifts on TX provides 455kHz offset for receiver IF mixing when VCO frequency is doubled. 3. Sinse chip cannot divide VCO directly, they are down-mixed with the 10.240MHz Referency Oscillator signal, produsing 6MHz outputs (RX Mode) and 3MHz outputs (TX Mode) into dividers. Standard 16MHz VCO is used. 4. PLL08A contains only the first 22 FCC channels for EEC use; otherwise both chip are identical. Example of VCO Determination, Channel 1: 1206 x 5kHz + 10.240MHz = 16.270MHz (RX-Mode) 1297 x 2.5kHz + 10.240MHz = 13.4825MHz (TX-Mode) (13.4825MHz x 2 = 26.965MHz)

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PLL0305A Serial Input PLL Frequency Synthesizer

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 RA 1 RA 2 V R Vcc PD GND LD F in CLOCK DATA ENABLE PD TEST REF out X out X in

Name

Description

18

RA 0

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PLL2002A Serial Input PLL Frequency Synthesizer


The PLL2002A is a serial data programmable PLL Frequency Syntheseizer. Ratios of reference frequency divider and input frequency divider can be independently set. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Name RI RO NC Vcc PD GND LD Fin CL Data EN DOA NC Test OV OR Description Reference X-tal Oscillator Input Reference X-tal Oscillator Output No Connection Positive Supply Voltage - 5 Volt Phase Detector Output - VCO Voltage Out Ground Loop Detector - Loop Detected=HIGH - Not Detected=LOW VCO Frequency In Clock from CPU Data from CPU Enable from CPU Charge pump output for activ lowpass filter No Connection Connect to Vcc Phase detector output to differential lowpass filter Phase detector output to differential lowpass filter

Serial Data for PLL2002A

Serial data input timing

Divider data setting procedure

Input data must be MSB first. Final bit (17th bit) is assigned to the control bit. Data are written into shift register at the rising edge of the CLK signal. When LE is HIGH, data is transferred from the shift register to either the latch of reference divider or input divider. Thus data must be written on the shift register while LE is remaining L0W. While all bits of the N latch to are "0", the N counter will be disabled, DOA, DOP are floating, and the supply current will be decreased. While all bits of the R latch are "0", oscillator will be disabled. While all bits of R and N latches are "0" , supply current decreases to 10uA or less.

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TK10483 Low Power Narrowband FM IF


TK10483 is similar to RCL10483

The TK10483 is a low power narrow band FM detector integrated circuit for FM dual conversion of communication equipment. The TK10483 includes oscillator, limiting amplifier, AFC circuit, quadrature detect. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Name Crystal oscillator (10.245MHz) Crystal oscillator (10.245MHz) RF / MF input (10.7MHz) GND Ground Output to IF Filter (455kHz) Description

Input from IF Filter (455kHz)

Vcc

Positive Supply Voltage Quadrature Coil Audio Output

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REC86345 PLL Frequency Synthesizer

Overview
This PLL-circuit use a 8 bit BCD binary programmable divide-by-N counter.

Down-converting of the frequency to the divider

This PLL Circuit use a Mixer and a X-Tal Oscillator to convert the output frequency f OUT to the f IN to the PLL Circuit. The X-Tal frequency is f XTAL = f OUT - f IN

The output frequency can be changed by changing the mixing-xtal or add a new mixing-xtal to the oscillator.

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Name AFC Vcc F in RI RO FS APC LD P7 P6 P5 P4 P3 P2 P1 P1 GND FIL

Description Automatic Frequency Control Positive Supply Voltage VCO Frequency Input Referency Oscillator Input Referency Oscillator Output LOW=10kHz - HIGH=5kHz Automatic Phace Control Loop Detect - Unlocked=LOW Locked=HIGH Programmable input 7 Programmable input 6 Programmable input 5 Programmable input 4 Programmable input 3 Programmable input 2 Programmable input 1 Programmable input 0 Ground

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TA7320P RL7320 Duble Balanced Modulator/Demodulator/Mixer

Pin 1 2 3 4 5 Vcc

Name Positive Supply Voltage Input Output Ground

Description

GND

6 7 8 9

Input Input Output

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SM5118 PLL Frequency Synthesizer

Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 8 bit BCD binary programmable divide-by-N counter. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Name Vcc F in RI RO 1/2R RB PD LD NC P8 P7 P6 P5 P4 Description Positive Supply Voltage VCO Frequency Input Referency Oscillator Input Referency Oscillator Output Reference OSC frequency divide by 2 output Reference Oscillator (Buffered) Phase Detector Output Loop Detect - Unlocked=LOW Locked=HIGH Not Connected Programmable input 8 Programmable input 7 Programmable input 6 Programmable input 5 Programmable input 4

15 16 17 18

P3 P2 P1 GND

Programmable input 3 Programmable input 2 Programmable input 1 Ground

Explanation of pin function terms

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SM5123A PLL Frequency Synthesizer

Pin 1 9 9 9 9 9 9 9 18 2 2 18 9 1 19 18 5 4

Name Vcc A B C D E F G GND RO RI GND F in Vcc AO AI PD LD

Description Positive Supply Voltage Display Segment A Display Segment B Display Segment C Display Segment D Display Segment E Display Segment F Display Segment G Ground Referency Oscillator Output Referency Oscillator Input Ground VCO Frequency Input Positive Supply Voltage Loop filter Amplifier Output Loop filter Amplifier Input Phase Detector Output Loop Detect - Unlocked=LOW Locked=HIGH

9 18 18 18 18 18

T/R CH19 CH19 DOWN UP GND

Transmit=LOW Receive=HIGH Channel 19 Channel 19 Channel DOWN Channel UP Ground

Explanation of pin function terms

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SM5124A PLL Synthesizer

Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 8 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory to 40 channels. Pin Name Description 1 Q in Internal quartz crystal oscillator circuit input 2 3 4 5 6 7 8 Q out VDD LD DO AI AO T/R Internal quartz crystal oscillator circuit output Power supply 5,7 to 6,3 Volt UNLOCKED signal output. Unlocked: Low, Locked: High Phase detector output. Charge pump circuit for active filter Amplifier input Amplifier output Transmit/receiving switch. Transmit: High, Receive: Low

9 10 11 12 13 14 15 16 17 18

F in P0 P1 P2 P3 P4 P5 P6 P7 VSS

Programmable counter input Channel switching input Channel switching input Channel switching input Channel switching input Channel switching input Channel switching input Channel switching input Channel switching input Ground

Explanation of pin function terms

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SM5152A Serial Programmable PLL Frequency Synthesizer

Pin 1 2 3 4 5 6 7 8 9 RO

Name RIN VCC PDO GND fIN E D CL Referency Frequency Input

Description Referency Frequency Output (Buffered) Positive Supply Voltage Phase Detector Output Ground Frequency Input Enable Data Clock

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SM5158A Serial Input PLL Frequency Synthesizer

Pin 1 2 3

Name

Description

4 5 6 7 8 9 10 11 12 13 14 15 16

Explanation of pin function terms

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SO42P Duble Balanced Modulator


Similar to TDA 6130-5

Pin 7 Input Pin 8 Input Pin 2 Output Pin 3 Output Pin 5 Bias Input Pin 11 Input Pin 13 Input Pin 10 Output Pin 12 Output Pin 1 GND Pin 4 GND Pin 6 GND Pin 9 GND Pin 14 GND

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TA7200 / TA7204 / TM1153 Audio Power Amplifier

Pin 1 2 3 4 5 6 7 8 9 10 GND OP Vcc BP FB FB BP FB BP IP

Name Ground Output Positive Supply Voltage Bypass Feedback Feedback Bypass Feedback Input Bypass Input

Description

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TA7222 Audio Power Amplifier

5,8 Watt Audio Power Amplifier with Muting Control


Pin 1 2 3 4 5 6 7 8 9 10 Vcc RR MC OP FB GA GND GND OP BS Name Supply Voltage Ripple Reject Muting control AF Signal Input FB Filter Gain adjust Ground Ground AF Output BootStrap Description

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TA7303P FM IF Amplifier and Discriminator

Pin 1 2 3 4 5 6 7 8 9

Name IF Input NF S-Meter Muting Ground Discriminator Coil Discriminator Coil Audio Output Positive Supply Voltage

Description

GND

Vcc

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TA7368 Audio Power Amplifier

0,7 Watt Audio Power Amplifier with Pre-Amlifier


Pin 1 2 3 4 5 6 7 8 9 IP Name Input Ripple filter NF Phase Pre-amlifier Ground Power-amplifier Ground Output NC Positive supply voltage Description

GND GND OP Vcc

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TC5080P Programmable Divider

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Name Prog. Input 1 Prog. Input 2 Prog. Input 3 Prog. Input 4 Prog. Input 5 Prog. Input 6 Prog. Input 7 Prog. Input 8 GND PD

Description

Programmable Divider Output to PLL

Vcc

Frequency Input from VCO Positive Suppy Voltage

TC5080 / TC5081 - SSB Chassis

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TC5081P PLL Phase-Locked-Loop

Description:

The TC5081P is an integrated circuit in a 9-Lead SIP type package consisting of a digital phase comparator and an amplifier. Three state outputs connected to low pass filter (using an internal amplifier) will produce DC voltage to control a VCO. Low state pulses appear on phase out as long as the loop is unlocked and thses can be utilized as lock indicator. Pin 1 2 3 4 5 6 7 8 9 AOUT AIN PD Phase Output VCC NC S R GND Name Amplifier Output Amplifier Input Phase Detector Output Suply Voltage 4,5-8 Volt No Conection Reference Frequency Input VCO Frequency Input Ground Description

TC5080 / TC5081 - SSB Chassis

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TC5082P Oscillator and Reference Divider

Pin 1 2 3 4 5 6 7 8 9

Name Oscillator Frequency Output X-tal Oscillator X-tal Oscillator Vcc

Description

Oscillator Frequency Output Divided by 1024 Oscillator Frequency Output Divided by 256 GND

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TC9102 PLL Frequency Synthesizer

Overview
This PLL-circuit use a 7 bit BCD binary programmable divide-by-N counter.

Down-converting of the frequency to the divider

This PLL Circuit use a Mixer and a X-Tal Oscillator to convert the output frequency f OUT to the f IN to the PLL Circuit. The X-Tal frequency is f XTAL = f OUT - f IN

The output frequency can be changed by changing the mixing-xtal or add a new mixing-xtal to the oscillator.

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Name Vcc F in RI 1/2 R PD AI AO LD T/R P5 P4 P3 P2 P1 P1 GND

Description Positive Supply Voltage VCO Frequency Input Referency Oscillator Input Reference OSC frequency divide by 2 output Connect to GND Phase Detector Output Amp. Input Amp. Output Loop Detect - Unlocked=LOW Locked=HIGH Transmit=HIGH Receive=LOW Programmable input 5 Programmable input 4 Programmable input 3 Programmable input 2 Programmable input 1 Programmable input 0 Ground

Explanation of pin function terms

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TC9103 PLL Frequency Synthesizer

Overview
This PLL-circuit use a 6 bit BCD binary programmable divide-by-N counter.

Down-converting of the frequency to the divider

This PLL Circuit use a Mixer and a X-Tal Oscillator to convert the output frequency f OUT to the f IN to the PLL Circuit. The X-Tal frequency is f XTAL = f OUT - f IN

The output frequency can be changed by changing the mixing-xtal or add a new mixing-xtal to the oscillator.

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Name Vcc RI RO 1/2 R PD AI AO LD T/R P5 P4 P3 P2 P1 P1 F in GND

Description Positive Supply Voltage Referency Oscillator Input Referency Oscillator Output Reference OSC frequency divide by 2 output Phase Detector Output Amp. Input Amp. Output Loop Detect - Unlocked=LOW Locked=HIGH Transmit=HIGH Receive=low Programmable input 5 Programmable input 4 Programmable input 3 Programmable input 2 Programmable input 1 Programmable input 0 Connect to GND VCO Frequency Input Ground

Explanation of pin function terms

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TC9106 Aand TC9119 PLL Frequency Synthesizer

Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 8 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory to 40 channels. Pin 1 2 3 4 5 6 7 8 9 10 11 Name Vcc RI CL LD PD AI AO T/R F in P0 P1 Description Positive Supply Voltage Referency Oscillator Input Loop Detect - Unlocked=LOW Locked=HIGH Phase Detector Output Amp. Input Amp. Output Transmit=HIGH Receive=LOW VCO Frequency Input Programmable input 0 Programmable input 1

12 13 14 15 16 17 18

P2 P3 P4 P5 P6 P7 GND

Programmable input 2 Programmable input 3 Programmable input 4 Programmable input 5 Programmable input 6 Programmable input 7 Ground

Explanation of pin function terms

Programming Chart for TC9106


Channel 1 2 .. 22 .. 40 3254 3256 .... 3306 .... 3342 RX Divided by 3345 3347 .... 3397 .... 3433 TX Divided by

NOTES: 1. 91-count upshift on TX provides 455kHz offset for receiver IF mixing. 2. Reference and Programmable Dividers use 5kHz steps. Example of VCO Determination, Channel 1: 3254 x 5kHz = 16.270MHz (RX-Mode) 3345 x 5kHz = 16.725MHz (TX-Mode)

Programming Chart for TC9119


Channel 1 2 .. 3381 3383 .... RX Divided by 3472 3474 .... TX Divided by

40

3459

3550

NOTES: 1. Identical operation principal to TC9106. Only difference is the N-Codes themselves. 2. reference and Programmable Dividers use 5kHz step. 3. 91-count upshift on TX provides 455kHz offset for receiver IF Mixing. Example of VCO Determination, Channel 1: 3381 x 5kHz = 16.905MHz (RX-Mode) 3472 x 5kHz = 17.360MHz (TX-Mode) + 1.25kHz tuned offsets.

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TC9122 Programmable Divider

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Vcc Fin

Name Positive Supply Voltage Divider Input Programable Input Programable Input Programable Input Programable Input Programable Input Programable Input Programable Input Programable Input Programable Input Programable Input Programable Input Programable Input

Description

15 16 17 18 Fout GND

Programable Input Programable Input Divider Output Ground

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TDA1905 Audio Power Amplifier

5 Watt Audio Power Amplifier with Muting


Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Vcc Name Output Supply Voltage BootStrap Threshold Muting Inverting Input SVR Non Inverting Input Ground Ground Ground Ground Ground Ground Ground Ground Description

GND GND GND GND GND GND GND GND

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TDA2003 Audio Power Amplifier

Pin 1 2 3 4 5

Name Input Feedback Ground Output Positive Power Supply

Description

GND Vcc

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TK10487M FM IF-Amplifier and Discriminator


High sensitivity FM IF system IC (for use in cordless phones, amateur radio, etc.) with signal meter output, up to 60MHz operation.

Pin 1 2 3 4 5 6 7 8 9 10 11 12

Name Oscillator Oscillator Output to Filter Input from Filter

Description

Vcc

Discriminator Coil Audio Output Positive Supply Voltage

13 14 15 16 17 18 19 20

GND

Ground RF Input

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TK10930V Narrowband FM/AM IF Amplifire and Demodulator


Narrow band FM/AM IF system lC (for use in amateur, air band, marine band receivers)up to 60MHz. Features AM/FM IF Amp. available : Independent operation. Wide operating voltage range : 2.5V 8.0V. Wide signal meter output. AGC amp. for AM IF available. Ceramic discriminator is available. AM ON/OFF Function

Pin 1 2 3 4 5 6 7

Name Oscillator Oscillator Mixer Out Vcc Positive Power Supply AM IF Output Decoupling FM IF Output

Description

8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24

GND

Decoupling Decoupling Limiter Output Quad In FM Discriminator Output AM Detector Output AM Switch IF Ground RSSI Out AM Low Out AM AGC (AutomaticGainControl) Noise Amplifier Input Noise Amplifier Output CCMP In CCMP Out Mixer Ground RF/IF Input

GND

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uPC563 Audio Power Amplifier


Similar to uPC1001 / uPC1024 / uPC1025 / uPC1156

4,8 Watt Audio Power Amplifier


Pin 1 7 2 4 5 6 7 9 7 10 Vcc NC BS PC PC IP FB GND NC OP Name Supply Voltage BootStrap Phase Compensation Phase Compensation Input Feedback Ground Output Description

uPC577H Balanced RF Amplifier

Pin 1 2 3 4 5 6 7 GND

Name Decoupling Input Input Ground Output Decoupling Positive Power Supply

Description

Vcc

uPC1037H Duble Balanced Mixer/Amlifire


Pin 1 2 3 4 5 6 7 8 Vcc Name Positive Supply Voltage Output Ground Input Decoupling Input Description

GND

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uPC1182H 5 Watt Audio Power Amplifier

Pin 1 2 3 4 5 6 7

Name

Description

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uPC1241H uPC1242H 5 Watt Audio Power Amplifier

Pin 1 2 3 4 5 6 7 8

Name

Description

PD858C PLL Integrated Circuits

Overview
This PLL-circuit use a 10 bit BCD programmable divide-by-N counter for 399 channels.

Down-converting of the frequency to the divider

This PLL Circuit use a Mixer and a X-Tal Oscillator to convert the output frequency f OUT to the f IN to the PLL Circuit. The X-Tal frequency is f XTAL = f OUT - f IN

The output frequency can be changed by changing the mixing-xtal or add a new mixing-xtal to the oscillator.

Pin Name 1 LD 2 PD out 3 AI 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 AO PDI RDO FS 1/2R RI RO FIN VCC P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 GND PO

Decription Loop Detector output - HIGH=Unlocked LOW=Locked Phase Detector output Loop filter Amplifier Input Loop filter Amplifier Output Programable Divider Input Reference Divider Output Frequency Select input: HIGH= 10kHz - LOW=5kHz Referency frequency divided by 2 Referency oscillator Input (X-tal) Refeerency oscillator Output (X-tal) VCO Oscillator Input Positive Power Supply (+5Volt) BCD programable input 0 BCD programable input 1 BCD programable input 2 BCD programable input 3 BCD programable input 4 BCD programable input 5 BCD programable input 6 BCD programable input 7 BCD programable input 8 BCD programable input 9 Ground Programable Divider Output

Explanation of pin function terms

Modification methods
BCD Programming of uPD858
Ch. No. 1 2 3 4 .. 40 91 92 93 95 .. 135 Divided by 1 0 1 1 1 P0 0 1 1 0 .. 0 P1 0 0 0 1 .. 1 P2 0 0 0 0 .. 0 P3 1 1 1 1 .. 1 P4 0 0 0 0 .. 1 P5 0 0 0 0 .. 0 P6 1 1 1 1 0 P7 0 0 0 0 .. 1 P8 0 0 0 0 0 0 P9

P0 to P3 is ONES P4 to P7 is TENS P8 to P9 is HUNDREDS Above each program pin number is now something called "BCD P0WERs" rather than the previous "P0WERS-0F-2". In this system the pins are assigned such that each successive group of pins has a significance 10 times greater than the preceeding group. Within each decimal group the weights still double in the usual binary progression, but here the highest possible number in a group can't exceed "9" or its decimal multiple such as "90", "900", etc. (Assuming there were that many IC pins.) Each decimal group can only have a maximum of 4 bits. In this IC there are only 10 rather than 12 program pins so the Hundreds Group can never be worth more than (1 + 2) x 100 or 300. Just figure the total binary value of each group in the usual way, multiply it by 1, 1O, or 100 as appropriate, then add all the groups together: 0nes Group + Tens Group + Hundreds Group, etc. Since each group has a value, the sum of the groups is the N-Code. For Ch.1, the group sum is 1 + (10 + 80) = 91. Try the math yourself for the other channels. Also notice that Pin 22 is permanently grounded (logic "0" ) since its BCD weight is "200", but we never need a code bigger than "135." (100 + 30 + 5.) By using all ten pins (pins 13-22) you see there's a potential frequency capacity of (9 + 90 + 300) = 399 channels if you could .program them all. This fact has been put to great use in modifications! 0nce again, the uPD858 chip had the excess capacity for possible use elsewhere.

PD2810 PLL Integrated Circuits

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Name P1 P2 P3 P4 P5 P6 P7 T Q IFS T/R VDD RO RI RB 1/2R

Decription Binary programable input 1 Binary programable input 2 Binary programable input 3 Binary programable input 4 Binary programable input 5 Binary programable input 6 Binary programable input 7 Divided by 2 input Divided by 2 output IF Frequency Select Transmit=LOW Receive=HIGH Positive Power Supply (+5Volt) Refeerency oscillator Output (X-tal) Referency oscillator Input (X-tal) Reference divider output (Buffered) Referency frequency divided by 2

17 18 19 20 21 22 23 24

LD VDD PD out AI AO FS GND FIN

Loop Detector - HIGH=Locked LOW=Unlocked Positive Power Supply (+5Volt) Phase Detector output Loop filter Amplifier Input Loop filter Amplifier Output Function Select - HIGH=10kHz step LOW=5kHz step Ground VCO Oscillator Input

Explanation of pin function terms

PD2812 PLL Integrated Circuits

Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 8 bit BCD binary programmable divide-by-N counter or 6 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory to 40 channels. Pin 1 2 3 4 5 6 7 8 9 Name GND FIN MS PO DO AO AI PD LD Decription Ground VCO Oscillator Input Mode Select - HIGH=40 Channels ROM - LOW=Binary input (N=3-255) Programable Divider Output Reference Divider Output Loop filter Amplifier Output Loop filter Amplifier Input Phase Detector output Loop Detector output - Locked=HIGH Unlocked=LOW

10 11 12 13 14 15 16 17 18 19 20 21 22

VDD I P1 P2 P3 P4 P5 P6 P7 P8 1/2R RI RO

Positive Power Supply (+5Volt) Inhibit Binary programable input 1 Binary programable input 2 Binary programable input 3 Binary programable input 4 Binary programable input 5 Binary programable input 6 Binary programable input 7 Binary programable input 8 Referency frequency divided by 2 Referency oscillator Input (X-tal) Refeerency oscillator Output (X-tal)

Explanation of pin function terms

PD2824 PLL Integrated Circuits

Overview
This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 6 bit BCD binary programmable divide-by-N counter. N-codes from N=91 to N=135.

Down-converting of the frequency to the divider

This PLL Circuit use a Mixer and a X-Tal Oscillator to convert the output frequency f OUT to the f IN to the PLL Circuit. The X-Tal frequency is f XTAL = f OUT - f IN

The output frequency can be changed by changing the mixing-xtal or add a new mixing-xtal to the oscillator.

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

Name P1 P2 P3 P4 P5 P6 T Q NC 1/2R VDD RI RO RB LD TC PD AI AO NC VSS FIN

Decription Program input 1 Program input 2 Program input 3 Program input 4 Program input 5 Program input 6 Divided by 2 Input Divided by 2 Output Not Connected Referance Osc. Output Divided by 2 V+ (5 Volt) Referance Osc. Input Referance Osc. Output Referance Osc. Output + Loop Detect Output - HIGH=Locked LOW=Unlocked Loop Detect Output (Connected HIGH) Phase Comparator Output Amp. Input Amp. Output Not Connected GND HF Input

Explanation of pin function terms

Variable capacitance diode

BB112 AM variable capacitance diode BB130 AM variable capacitance diode BB131 VHF variable capacitance diode BB132 VHF variable capacitance diode BB133 VHF variable capacitance diode BB134 Low-voltage variable capacitance diode BB147 VHF variable capacitance diode BB150 VHF variable capacitance diode BB152 VHF variable capacitance diode BB156 Low-voltage variable capacitance diode BB204 VHF variable capacitance diode BB215 UHF variable capacitance diode BB405 UHF variable capacitance diode BB809 VHF variable capacitance diode BB910 VHF variable capacitance diode KDV251 Variable capacitance diode SVC251 Variable capacitance diode

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BB112 AM variable capacitance diode


APPLICATIONS Electronic tuning in VHF television tuners, band B up to 460 MHz. VCO.
Anode Katode

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BB130 AM variable capacitance diode


APPLICATIONS Electronic tuning in AM radio applications VCO
Anode Katode

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BB131 VHF variable capacitance diode


APPLICATIONS Electronic tuning in satellite tuners Tunable coupling VCO.
Anode Katode

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BB132 VHF variable capacitance diode


APPLICATIONS Electronic tuning in VHF television tuners, band A up to 160 MHz VCO.
Anode Katode

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BB133 VHF variable capacitance diode


APPLICATIONS Electronic tuning in VHF television tuners, band B up to 460 MHz VCO.
Anode Katode

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BB134 Low-voltage variable capacitance diode


APPLICATIONS VCO UHF Tuning

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BB147 VHF variable capacitance diode


APPLICATIONS Electronic tuning in television tuners with extended VHF range Voltage controlled oscillators (VCO).
Anode Katode

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BB150 VHF variable capacitance diode


APPLICATIONS Electronic tuning in VHF television tuners, band B up to 460 MHz VCO
Anode Katode

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BB152 VHF variable capacitance diode


APPLICATIONS Electronic tuning in VHF television tuners, band A up to 160 MHz Voltage controlled oscillators (VCO)
Anode Katode

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BB156 Low-voltage variable capacitance diode


APPLICATIONS Voltage controlled oscillators (VCO)

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BB204 VHF variable capacitance diode


APPLICATIONS Electronic tuning in FM radio applications VCO
Katode Anode Katode

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BB215 UHF variable capacitance diode


APPLICATIONS Electronic tuning in UHF television tuners VCO.
Katode Anode

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BB405 UHF variable capacitance diode


APPLICATIONS Electronic tuning in UHF television tuners VCO.
Katode Anode

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BB809 VHF variable capacitance diode


APPLICATIONS Electronic tuning in VHF television tuners, band A up to 160 MHz. VCO.
Katode Anode

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BB910 VHF variable capacitance diode


APPLICATIONS Electronic tuning in VHF television tuners, band B up to 460 MHz VCO
Katode Anode

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KDV251 Variable capacitance diode


Anode

APPLICATIONS AFC CB VCO


Katode

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SVC251SPA Variable capacitance diode


APPLICATIONS AFC CB VCO
Anode Katode

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2SC380 Silicon NPN Transistor High frequency amplifier applications.


The 2SC380 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in AM converter, AM/FM IF amplifier and local oscillator in AM/FM tuner.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 35V 30V 4V 50mA 300mW +125C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 12V, IC = 2mA Power Gain Gain-Bandwidth Product PG fT IC = 1mA, VCE = 10V Min Typ Max Unit 40 - 240 29 33 dB

VCE = 6V, IC = 1mA, f = 10,7MHz 27 100

400 MHz

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2SC383 Silicon NPN Transistor High frequency amplifier applications.


The 2SC383 is a silicon NPN planar epitaxial transistor in a TO-92 type package.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 50V 45V 4V 50mA 300mW +125C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 12,5V, IC = 12,5mA Power Gain Gain-Bandwidth Product PG fT IC = 12,5mA, VCE = 12,5V Min Typ Max Unit 20 - 100 36 dB MHz

VCE = 12,5V, IC = 12,5mA, f = 45MHz 29 300

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2SC388 Silicon NPN Transistor High frequency amplifier applications.


The 2SC388 is a silicon NPN planar epitaxial transistor in a TO-92 type package.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 25V 4V 50mA 300mW +125C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 12,5V, IC = 12,5mA Power Gain Gain-Bandwidth Product PG fT IC = 12,5mA, VCE = 12,5V Min Typ Max Unit 20 - 200 36 dB MHz

VCE = 12,5V, IC = 12,5mA, f = 45MHz 28 300

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2SC454 Silicon NPN Transistor High frequency applications.


The 2SC454 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as High frequency amplifier and Mixer applications.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 30V 5V 100mA 200mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Forward Current Transfer Ratio Current Gain-Bandwidth Product Power Gain Noise Figure Symbol Test Conditions hFE VCE = 12V, IC = 2mA fT PG NF VCE = 12V, IC = 2mA VCE = 12V, IC = 1mA, f = 455kHz VCB = 6V, IC = 0,1mA, f = 1kHz Min Typ Max Unit 100 - 500 230 35 25 MHz dB dB

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2SC460 Silicon NPN Transistor High frequency applications.


The 2SC460 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as High frequency amplifier and Mixer applications.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 30V 5V 100mA 200mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Forward Current Transfer Ratio Current Gain-Bandwidth Product Power Gain Noise Figure Symbol Test Conditions hFE VCE = 12V, IC = 2mA fT PG NF VCE = 12V, IC = 2mA VCB = 6V, IC = 2mA, f = 1MHz Min Typ Max Unit 35 - 200 230 29 5 MHz dB dB

VCE = 6V, IC = 1mA, f = 10,7MHz 26 -

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2SC535 Silicon NPN Transistor High frequency applications.


The 2SC535 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in VHF amplifier, mixer and local oscillator.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 20V 4V 20mA 100mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 6V, IC = 1mA Gain-Bandwidth Product Noise Figure Power Gain fT NF PG VCE = 6V, IC = 5mA VCB = 6V, IC = 1mA, f = 100MHz Min Typ Max Unit 60 - 200 450 940 3,5 20 5,5 MHz dB dB

VCE = 6V, IC = 1mA, f = 100MHz 17

2SC829 Silicon NPN Transistor High frequency applications.


The 2SC829 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as RF amplification, Oscillation, Mixing, and IF stage applications in FM/AM radios.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 20V 5V 30mA 400mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Forward Current Transfer Ratio Current Gain-Bandwidth Product Symbol Test Conditions Min Typ Max Unit hFE VCE = 10V, IC = 1mA 70 - 250 fT VCE = 10V, IC = 1mA 150 230 MHz

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2SC1009A Silicon NPN Transistor High frequency applications.


The 2SC1009 is a silicon NPN planar epitaxial transistor in a SOT type package. This device is designed for use in AM converter, AM/FM IF amplifier and local oscillator in AM/FM tuner.
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 50V 30V 5V 50mA 150mW +125C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 6V, IC = 1mA Gain-Bandwidth Product Noise Figure fT NF IC = 1mA, VCB = 6V, f = 1MHz Min Typ Max Unit 60 100 180 4 MHz dB

IC = 1mA, VCE = 6V, f = 100MHz 150 250 2

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2SC1047 Silicon NPN Transistor High frequency amplifier applications.


The 2SC1047 is a silicon NPN planar epitaxial transistor in a TO-92 type package. - Optimum for RF amplification of FM/AM radios. - High transition frequency
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 20V 3V 20mA 400mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 6V, IC = 1mA Power Gain Gain-Bandwidth Product Noise Figure PG fT NF Min Typ Max Unit 40 - 260 dB MHz dB

VCE = 6V, IC = 1mA, f = 100MHz 20 IC = 1mA, VCB = 6V, f = 100MHz -

IC = 1mA, VCE = 6V, f = 200MHz 450 650 3,3

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2SC1342 Silicon NPN Transistor High frequency applications.


The 2SC1342 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as VHF amplifier, Oscillator and Mixer applications.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 20V 4V 30mA 100mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Forward Current Transfer Ratio Current Gain-Bandwidth Product Power Gain Noise Figure Symbol Test Conditions hFE VCE = 6V, IC = 1mA fT PG NF VCE = 6V, IC = 1mA VCB = 6V, IC = 1mA, f = 100MHz Min Typ Max Unit 35 - 200 150 320 17 5,5 8,5 MHz dB dB

VCE = 6V, IC = 1mA, f = 100MHz 13 -

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2SC1674 Silicon NPN Transistor High frequency applications.


The 2SC1674 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as FM RF amplifier, Mixer and IF amlifier applications.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 20V 4V 20mA 250mW +125C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Forward Current Transfer Ratio Current Gain-Bandwidth Product Power Gain Noise Figure Symbol Test Conditions hFE VCE = 6V, IC = 1mA fT PG NF IC = 5mA, VCE = 6V, IE IC = 1mA, VCB = 6V, f = 100MHz Min Typ Max Unit 40 90 180 400 600 22 3 5 MHz dB dB

VCE = 6V, IC = 1mA, f = 100MHz 18 -

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2SC1906 Silicon NPN Transistor High frequency applications.


The 2SC1906 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as VHF amplifier, Oscillator and Mixer applications.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 19V 2V 50mA 300mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Forward Current Transfer Ratio Current Gain-Bandwidth Product Power Gain Symbol Test Conditions hFE VCE = 10V, IC = 10mA fT PG VCE = 10V, IC = 10mA VCE = 10V, IC = 5mA, f = 200MHz Min Typ Max Unit 40 600 1000 18 MHz dB

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2SC1907 Silicon NPN Transistor High frequency applications.


The 2SC1907 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as UHF Tuner and Oscillator applications.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 19V 2V 50mA 300mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Forward Current Transfer Ratio Current Gain-Bandwidth Product Symbol Test Conditions Min Typ Max Unit hFE VCE = 10V, IC = 10mA 40 fT VCE = 10V, IC = 10mA 900 1100 MHz

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2SC1923 Silicon NPN Transistor High frequency applications.


The 2SC1923 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in FM high frequency amplifier, FM IF amplifier and local oscillator.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 40V 30V 4V 20mA 100mW +125C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 6V, IC = 1mA Gain-Bandwidth Product Noise Figure Power Gain fT NF PG IC = 1mA, VCE = 6V VCE = 6V, IC = 1mA, f = 100MHz Min Typ Max Unit 40 - 200 550 2,5 18 4 MHz dB dB

VCE = 6V, IC = 1mA, f = 100MHz 15

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2SC2347 Silicon NPN Transistor High frequency applications.


The 2SC2347 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in UHF and VHF amplifier applications.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 15V 3V 50mA 250mW +125C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Min Typ Max Unit Forward Current Transfer Ratio hFE VCE = 3V, IC = 8mA 20 Gain-Bandwidth Product fT IC = 8mA, VCE = 10V 650 MHz

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2SC2349 Silicon NPN Transistor High frequency applications.


The 2SC2349 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in VHF amplifier applications.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 15V 3V 50mA 250mW +125C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Min Typ Max Unit Forward Current Transfer Ratio hFE VCE = 3V, IC = 8mA 20 Gain-Bandwidth Product fT IC = 8mA, VCE = 10V 600 MHz

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2SC2471 Silicon NPN Transistor High frequency applications.


The 2SC2471 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as UHF Tuner and Oscillator applications.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 30V 3V 50mA 310mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Forward Current Transfer Ratio Current Gain-Bandwidth Product Symbol Test Conditions Min Typ Max Unit hFE VCE = 10V, IC = 5mA 20 fT VCE = 10V, IC = 5mA 1000 2000 MHz

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2SC2498 Silicon NPN Transistor High frequency applications.


The 2SC2498 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in UHF and VHF amplifier applications.
BEC Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 20V 3V 50mA 300mW +125C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 10V, IC = 10mA Gain-Bandwidth Product Noise Figure fT NF IC = 10mA, VCE = 10V IC = 5mA, VCB = 10V, f = 500MHz Min Typ Max Unit 30 80 300 3,5 2,5 GHz dB

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2SC2512 Silicon NPN Transistor High frequency applications.


The 2SC2512 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as VHF Tuner and Oscillator applications.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 20V 3V 50mA 300mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Forward Current Transfer Ratio Current Gain-Bandwidth Product Power Gain Noise Figure Symbol Test Conditions hFE VCE = 10V, IC = 10mA fT PG NF VCE = 10V, IC = 10mA VCB = 12V, IC = 2mA, f = 200MHz Min Typ Max Unit 30 600 900 20 3,8 5,5 MHz dB dB

VCE = 12V, IC = 2mA, f = 200MHz 16 -

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2SC2644 Silicon NPN Transistor High frequency applications.


The 2SC2644 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in UHF and VHF amplifier applications.
BEC Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 25V 12V 3V 120mA 500mW +125C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 5V, IC = 50mA Gain-Bandwidth Product Noise Figure fT NF IC = 30mA, VCE = 10V IC = 10mA, VCB = 10V, f = 500MHz Min Typ Max Unit 20 50 4 2,3 GHz dB

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2SC2668 Silicon NPN Transistor High frequency amplifier applications.


The 2SC2668 is a silicon NPN planar epitaxial transistor in a MINI (TO-92S) type package. This device is suitable for use as FM RF/IF amplifier applications.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 40V 30V 4V 20mA 100mW +125C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 6V, IC = 1mA Power Gain Gain-Bandwidth Product Noise Figure PG fT NF VCE = 6V, IC = 1mA, f = 100MHz IC = 1mA, VCE = 6V IC = 1mA, VCB = 6V, f = 100MHz Min Typ Max Unit 40 - 200 18 550 2,5 5 dB MHz dB

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2SC2669 Silicon NPN Transistor High frequency applications.


The 2SC2669 is a silicon NPN planar epitaxial transistor in a TO-92S (MINI) type package. This device is designed for use in AM converter, AM/FM IF amplifier and local oscillator in AM/FM tuner.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 35V 30V 4V 50mA 200mW +125C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 12V, IC = 2mA Gain-Bandwidth Product Power Gain fT PG IC = 1mA, VCE = 10V Min Typ Max Unit 40 - 240 100 30 33 MHz dB

VCE = 6V, IC = 1mA, f = 10,7MHz 27

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2SC2753 Silicon NPN Transistor High frequency amplifier applications.


The 2SC2753 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use in UHF and VHF amplifier applications.
BEC Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 17V 12V 3V 70mA 300mW +125C -40 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 6V, IC = 1mA Power Gain Gain-Bandwidth Product Noise Figure PG fT NF VCE = 6V, IC = 1mA, f = 100MHz IC = 1mA, VCB = 6V, f = 100MHz Min Typ Max Unit 40 - 200 28 dB MHz dB

IC = 5mA, VCE = 10V, f = 100MHz 450 750 2,2

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2SC2786 Silicon NPN Transistor High frequency applications.


The 2SC2786 is a silicon NPN planar epitaxial transistor in a MINI (TO-92S) type package. This device is designed for use in FM RF amplifier and local oscillator of FM tuner.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 20V 4V 20mA 150mW +150C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Forward Current Transfer Ratio Current Gain-Bandwidth Product Power Gain Noise Figure Symbol Test Conditions hFE VCE = 6V, IC = 1mA fT PG NF IC = 1mA, VCE = 6V, IE IC = 1mA, VCB = 6V, f = 100MHz Min Typ Max Unit 40 90 180 400 600 22 3 5 MHz dB dB

VCE = 6V, IC = 1mA, f = 100MHz 18 -

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2SC2787 Silicon NPN Transistor High frequency applications.


The 2SC2787 is a silicon NPN planar epitaxial transistor in a TO-92S (MINI) type package. This device is designed for use in AM converter, AM/FM IF amplifier and local oscillator in AM/FM tuner.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 50V 30V 5V 30mA 250mW +150C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Forward Current Transfer Ratio Current Gain-Bandwidth Product Noise Figure Symbol Test Conditions hFE VCE = 6V, IC = 1mA fT NF IC = 1mA, VCE = 6V, IE IC = 1mA, VCB = 6V, f = 1MHz Min Typ Max Unit 40 90 180 150 250 2 4 MHz dB

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2SC2814 Silicon NPN Transistor High frequency applications.


The 2SC2814 is a silicon NPN planar epitaxial transistor in a SOT type package. This device is designed for general purpose amplifier applications.
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 20V 5V 30mA 150mW +125C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 6V, IC = 1mA Gain-Bandwidth Product Power Gain Noise Figure fT PG NF IC = 1mA, VCE = 6V, VCE = 6V, IC = 1mA, f = 100MHz IC = 1mA, VCB = 6V, f = 100MHz Min Typ Max Unit 40 - 270 200 230 25 3 MHz dB dB

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2SC2839 Silicon NPN Transistor High frequency applications.


The 2SC2839 is a silicon NPN planar epitaxial transistor in a TO-92S (MINI) type package.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 20V 5V 30mA 150mW +125C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 6V, IC = 1mA Gain-Bandwidth Product Power Gain Noise Figure fT PG NF IC = 1mA, VCE = 6V VCE = 6V, IC = 1mA, f = 100MHz IC = 1mA, VCB = 6V, f = 100MHz Min Typ Max Unit 60 - 320 200 320 25 3 MHz dB dB

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2SC2996 Silicon NPN Transistor High frequency applications.


The 2SC2996 is a silicon NPN planar epitaxial transistor in a SOT type package. This device is designed for use in AM converter, AM/FM IF amplifier and local oscillator in AM/FM tuner.
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 40V 30V 4V 50mA 150mW +125C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 6V, IC = 1mA Gain-Bandwidth Product Noise Figure fT NF IC = 1mA, VCE = 6V IC = 1mA, VCB = 6V, f = 100MHz Min Typ Max Unit 60 - 240 150 350 4 MHz dB

Power Gain PG VCE = 6V, IC = 1mA, f = 100MHz - 15 - dB

2SC2999 Silicon NPN Transistor High frequency amplifier applications.


The 2SC2999 is a silicon NPN planar epitaxial transistor in a MINI (TO-92S) type package. This device is suitable for use as Low Noise RF amplifier applications.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 25V 20V 3V 30mA 150mW +125C -40 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 6V, IC = 1mA Power Gain Gain-Bandwidth Product Noise Figure PG fT NF VCE = 6V, IC = 1mA, f = 100MHz IC = 1mA, VCB = 6V, f = 100MHz Min Typ Max Unit 40 - 200 28 dB MHz dB

IC = 5mA, VCE = 10V, f = 100MHz 450 750 2,2

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2SC3000 Silicon NPN Transistor High frequency applications.


The 2SC3000 is a silicon NPN planar epitaxial transistor in a TO-92 type package.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 20V 5V 30mA 250mW +125C -55 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 6V, IC = 1mA Gain-Bandwidth Product Power Gain Noise Figure fT PG NF IC = 1mA, VCE = 6V VCE = 6V, IC = 1mA, f = 100MHz IC = 1mA, VCB = 6V, f = 100MHz Min Typ Max Unit 60 - 320 200 320 25 3 MHz dB dB

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2SC3127 Silicon NPN Transistor High frequency applications.


The 2SC3127 is a silicon NPN planar epitaxial transistor in a SOT-23 type package. This device is designed for use in VHF and UHF wide band amplifier.
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 20V 12V 3V 50mA 150mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 5V, IC = 20mA Gain-Bandwidth Product Noise Figure Power Gain fT NF PG VCE = 5V, IC = 20mA VCB = 5V, IC = 5mA, f = 900MHz VCE = 5V, IC = 20mA, f = 900MHz Min Typ Max Unit 30 90 200 3,5 4,5 2,2 10,5 GHz dB dB

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2SC3128 Silicon NPN Transistor High frequency applications.


The 2SC3128 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in VHF and UHF wide band amplifier.
BEC Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 20V 12V 3V 50mA 350mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 5V, IC = 20mA Gain-Bandwidth Product Noise Figure Power Gain fT NF PG VCE = 5V, IC = 20mA VCB = 5V, IC = 5mA, f = 900MHz VCE = 5V, IC = 20mA, f = 900MHz Min Typ Max Unit 30 90 200 3,5 4,5 2,2 10,5 GHz dB dB

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2SC3142 Silicon NPN Transistor High frequency amplifier applications.


The 2SC3142 is a silicon NPN planar epitaxial transistor in a SOT type package. This device is suitable for use as Low Noise RF amplifier applications Description:
. Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 25V 20V 3V 30mA 150mW/FONT> +125C -40 to +125C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Forward Current Transfer Ratio Power Gain Gain-Bandwidth Product Noise Figure Symbol hFE PG fT NF Test Conditions VCE = 10V, IC = 8mA VCE = 6V, IC = 1mA, f = 100MHz Min Typ Max Unit 40 28 180 dB MHz dB

IC = 5mA, VCE = 10V, f = 100MHz 450 750 IC = 1mA, VCB = 6V, f = 100MHz 2,2

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2SC3355 Silicon NPN Transistor High frequency applications.


The 2SC3355 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for low noise amplifier at VHF and UHF band.
BEC Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 20V 15V 3V 100mA 600mW +150C -65 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Forward Current Transfer Ratio Current Gain-Bandwidth Product Power Gain Noise Figure Symbol Test Conditions hFE VCE = 10V, IC = 20mA fT PG NF VCE = 6V, IC = 20mA, VCE = 10V, IC = 20mA, f = 1GHz VCB = 10V, IC = 7mA, f = 1GHz Min Typ Max Unit 50 120 300 6,5 11 1,1 GHz dB dB

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2SC3356
NPN SILICON EPITAXIAL TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 20V 12V 3V 100mA 200mW +150C -65 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE =10V, IC = 20mA Gain-Bandwidth Product Noise Figure fT NF IC = 20mA, VCE = 10V, IC = 7mA, VCB = 10V, f = 1GHz Min Typ Max Unit 50 120 300 7 1,1 2 GHz dB

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2SC3510 Silicon NPN Transistor High frequency applications.


The 2SC3510 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in VHF and UHF wide band amplifier.
BEC Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 20V 12V 3V 50mA 600mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 5V, IC = 20mA Gain-Bandwidth Product Noise Figure Power Gain fT NF PG VCE = 5V, IC = 20mA VCB = 5V, IC = 5mA, f = 900MHz VCE = 5V, IC = 20mA, f = 900MHz Min Typ Max Unit 30 90 200 3,5 4,5 2,2 10,5 GHz dB dB

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2SC3512 Silicon NPN Transistor High frequency applications.


The 2SC3512 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in VHF and UHF wide band amplifier.
BEC Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 15V 11V 2V 50mA 600mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 5V, IC = 20mA Gain-Bandwidth Product Noise Figure Power Gain fT NF PG VCE = 5V, IC = 20mA VCB = 5V, IC = 5mA, f = 900MHz VCE = 5V, IC = 20mA, f = 900MHz Min Typ Max Unit 50 120 250 6 1,6 10,5 GHz dB dB

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2SC3582 Silicon NPN Transistor High frequency applications.


The 2SC3582 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for low noise amplifier at VHF and UHF band.
BEC Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 20V 10V 1,5V 65mA 600mW +150C -65 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Forward Current Transfer Ratio Current Gain-Bandwidth Product Power Gain Noise Figure Symbol Test Conditions hFE VCE = 8V, IC = 20mA fT PG NF VCE = 8V, IC = 20mA, f = 1GHz VCB = 8V, IC = 7mA, f = 1GHz Min Typ Max Unit 50 100 250 8 12 1,2 2,5 GHz dB dB

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2SC3605 Silicon NPN Transistor High frequency amplifier applications.


The 2SC3605 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use in UHF and VHF amplifier applications.
BEC Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 20V 12V 3V 80mA 600mW +150C -40 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 10V, IC = 20mA Gain-Bandwidth Product Noise Figure fT NF IC = 20mA, VCE = 10V IC = 5mA, VCB = 10V, f = 1GHz Min Typ Max Unit 30 - 250 5 6,5 1,1 GHz dB

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2SC4308 Silicon NPN Transistor High frequency applications.


The 2SC4308 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in VHF wide band amplifier.
BEC Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 20V 3V 300mA 600mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Min Typ Max Unit Forward Current Transfer Ratio hFE VCE = 5V, IC = 50mA 50 - 200 Gain-Bandwidth Product fT VCE = 5V, IC = 50mA 1,5 2,5 GHz

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2SC4433 Silicon NPN Transistor High frequency applications.


The 2SC4433 is a silicon NPN planar epitaxial transistor in a TO-92S (MINI) type package.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 40V 18V 3V 50mA 300mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 10V, IC = 5mA Gain-Bandwidth Product Power Gain fT PG IC = 5mA, VCE = 10V VCE = 10V, IC = 10mA, f = 100MHz Min Typ Max Unit 60 - 320 750 26 MHz dB

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KTC3194 Silicon NPN Transistor High frequency amplifier applications.


The KTC3194 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as Low Noise RF amplifier applications.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 40V 30V 4V 20mA 625mW +150C -50 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 6V, IC = 1mA Power Gain Gain-Bandwidth Product Noise Figure PG fT NF IC = 1mA, VCE = 6V, f = 100MHz IC = 1mA, VCB = 6V, f = 100MHz Min Typ Max Unit 40 - 200 18 550 2,5 5 dB MHz dB

VCE = 6V, IC = 1mA, f = 100MHz 15 -

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KTC3195 Silicon NPN Transistor High frequency low noise amplifier applications.
The KTC3195 is a silicon NPN planar epitaxial transistor in a MINI (TO-92S) type package. This device is suitable for use as RF VHF Band amplifier applications.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Derate above +25C Operating Junction Temperature, TJ Storage Temperature Range, Tstg 40V 30V 4V 20mA 400mW 2.67mW/C +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 6V, IC = 10mA Power Gain Gain-Bandwidth Product Noise Figure PG fT NF VCE = 6V, IC = 1mA, f = 100MHz IC = 1mA, VCE = 6V, f = 100MHz IC = 1mA, VCB = 6V, f = 100MHz Min Typ Max Unit 40 - 200 18 550 2,5 5 dB MHz dB

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KTC3880 Silicon NPN Transistor High frequency amplifier applications.


The KTC3880 is a silicon NPN planar epitaxial transistor in a SOT type package. This device is suitable for use as RF amplifier applications.
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Derate above +25C Operating Junction Temperature, TJ Storage Temperature Range, Tstg 40V 30V 4V 20mA 150mW 2.67mW/C +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Symbol Test Conditions Static Characteristics Forward Current Transfer Ratio hFE VCE = 10V, IC = 8mA Power Gain Dynamic Characteristics Gain-Bandwidth Product Noise Figure PG fT NF VCE = 6V, IC = 1mA, f = 100MHz IC = 5mA, VCE = 10V, f = 100MHz IC = 1mA, VCB = 6V, f = 100MHz Min Typ Max Unit 40 15 18 550 2,5 200 5 dB MHz dB

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2SC1973 Silicon NPN Transistor RF Amplifier


The 2SC1973 is a silicon NPN epitaxial planer type transistor designed for RF amplifiers on HF band mobile radio applications.
BCE

Application:
Driver Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
q

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

20V 30V 3V 0,3A 0,9W +150C -55 to +150C

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 100uA, IE = 0 ICBO IEBO hFE fT VCB = 25V IE = 0 VEB = 3V, IC = 0 VCC = 5V, IC = 50mA Min Typ Max Unit 30 V 20 1 10 200 GHz V A A

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = Infinity Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Gain-Bandwidth Product

VCE = 5V, IC = 50mA, Note 1 50

1,5 2,5

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2SC461 Silicon NPN Transistor High frequency applications.


The 2SC460 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as VHF amplifier and Mixer applications.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 30V 30V 5V 100mA 200mW +150C -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Forward Current Transfer Ratio Current Gain-Bandwidth Product Power Gain Noise Figure Symbol Test Conditions hFE VCE = 12V, IC = 2mA fT PG NF VCE = 12V, IC = 2mA VCB = 6V, IC = 2mA, f = 1MHz Min Typ Max Unit 35 - 200 230 17 MHz dB dB

VCE = 6V, IC = 1mA, f = 100MHz 13 -

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2SC1675 Silicon NPN Transistor High frequency applications.


The 2SC1674 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as AM converter, AM/FM IF amplifier and local oscillator of AM/FM tuner.
ECB Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25C), PD Storage Temperature Range, Tstg 50V 30V 4V 30mA 250mW -55 to +150C

Electrical Characteristics: (TA = +25C unless otherwise specified)


Parameter Forward Current Transfer Ratio Current Gain-Bandwidth Product Noise Figure Symbol Test Conditions hFE VCE = 6V, IC = 1mA fT NF IC = 1mA, VCE = 6V, IE IC = 1mA, VCB = 6V, f = 1MHz Min Typ Max Unit 40 - 180 150 4 MHz dB

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